A bidirectional radiating array antenna based on SISL
By using a multi-layer structure design based on SISL, a high-gain bidirectional radiating array antenna was realized, which solved the problem of high integration cost of traditional bidirectional radiating antenna arrays and improved the array's gain and efficiency.
Patent Information
- Application Number
- CN202411934534.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-26
- Publication Date
- 2025-11-28
- Estimated Expiration
- 2044-12-26
AI Technical Summary
Traditional bidirectional radiating antenna arrays require back-to-back integration, resulting in high costs and an inability to simultaneously achieve high gain and efficient utilization.
A bidirectional radiating array antenna based on SISL is adopted. The bidirectional radiation of the upper and lower radiating structures is achieved by utilizing a multi-layer structure and an intermediate layer feed network. The design of the S1-S7 layers suppresses array element coupling and improves the gain.
Achieving a maximum gain of 24.2 dBi and a radiation efficiency of 78% in the 22-32 GHz range reduces costs and improves the utilization of the antenna array.
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Figure CN119726112B_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of antenna structure, and particularly relates to a bidirectional radiation array antenna based on SISL. BACKGROUND
[0002] Traditional bidirectional radiation antenna array often needs to be realized by two antenna arrays integrated back to back, which is equivalent to two antenna arrays. The 5G millimeter wave technology is developing rapidly in the world today, and will play an important role in the future construction of smart cities, especially in the higher requirements of millimeter wave technology for underground smart traffic. In a narrow tunnel, high gain antenna array is often needed to provide good signal transmission and transmission for communication equipment, and high gain bidirectional radiation antenna array can not only be used as a transmitting terminal for communication equipment in the tunnel, but also can realize receiving and transmitting simultaneously by using the bidirectional characteristic, thereby improving the utilization rate of the antenna array and saving the cost. SUMMARY
[0003] Based on the above-mentioned needs, the purpose of the present application is to provide a bidirectional radiation array antenna based on SISL. The low-loss structure of SISL is used, and radiation structures are loaded on the top layer and the bottom layer structure respectively, and the middle layer feed network is used to simultaneously excite the upper and lower layer radiation structures to realize bidirectional radiation.
[0004] To achieve the above-mentioned purpose, the technical scheme provided by the present application is as follows:
[0005] A bidirectional radiation array antenna based on SISL uses the multi-layer structure of SISL transmission line, which has the characteristics of symmetry of upper and lower layers, and uses the middle layer feed structure to simultaneously excite the upper and lower layer radiation structures to realize bidirectional radiation.
[0006] Among them, the bidirectional radiation array antenna includes S1-S7 layers, wherein S1 layer and S7 layer are isolation structures of the radiation structure of the array, used to suppress the mutual coupling between the array elements; S2 layer and S6 layer are radiation structures of the array; S3 and S5 layer are cavity structures of the array feed network, and S4 layer is a feed network structure of the array antenna. After the excitation signal is fed into the feed network, the radiation structure of the top layer and the bottom layer of the array antenna is excited respectively to realize bidirectional radiation.
[0007] Among them, the S1 and S2 layers are loaded above the radiation structure, used to suppress the coupling between the array antenna elements and improve the array gain.
[0008] The array radiation structure is composed of 64 array element radiation structures, and each array element radiation structure is composed of upper and lower layer metals; the upper layer metal structure is composed of 12 small square patches and rectangular patches on both sides; the square patches are connected to the lower layer metal through metallized vias; the lower layer metal of each array element corresponds to two rectangular slots, and the metallized vias are arranged on the upper and lower sides of the rectangular slots.
[0009] The S3 layer and the S5 layer are each provided with one array element corresponding to one small cavity.
[0010] The S4 layer is composed of a 1 / 64 feeding network and a unit feeding structure; the unit feeding is formed by loading a trapezoidal branch on two main transmission lines; the upper and lower layer metal structures of the S4 layer feeding structure are the same structure, and the upper and lower layer metals are connected through metallized vias.
[0011] The array feeding network adopts a T-shaped power division network.
[0012] Compared with the prior art, the beneficial effects of the present application are as follows:
[0013] Based on the above scheme, the present application realizes a high-gain bidirectional radiation array antenna by using an SISL structure. The front and rear bidirectional radiation can be realized by using one layer of feeding network, the maximum gain can reach 24.2dBi in the working bandwidth range of 22-32GHz, and the maximum radiation efficiency of the array can reach 78%. BRIEF DESCRIPTION OF DRAWINGS
[0014] Figure 1 is a schematic diagram of a bidirectional radiation array antenna structure based on SISL according to an embodiment of the present application;
[0015] Figure 2 is a schematic diagram of an isolation structure of a bidirectional radiation array according to an embodiment of the present application;
[0016] Figure 3 is a schematic diagram of a radiation structure of a bidirectional radiation array according to an embodiment of the present application;
[0017] Figure 4 is a schematic diagram of a cavity structure of a bidirectional radiation array according to an embodiment of the present application;
[0018] Figure 5 is a schematic diagram of a feeding network structure of a bidirectional radiation array according to an embodiment of the present application;
[0019] Figure 6 is a schematic diagram of a working bandwidth of a bidirectional radiation array according to an embodiment of the present application;
[0020] Figure 7 is a schematic diagram of front and rear beam gain and array radiation efficiency of a bidirectional radiation array according to an embodiment of the present application;
[0021] Figure 8 is a xoz plane radiation pattern of the bidirectional radiation array proposed in the embodiment of the present application.
[0022] Figure 9 is a yoz plane radiation pattern of the bidirectional radiation array proposed in the embodiment of the present application. DETAILED DESCRIPTION
[0023] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the protection scope of the present application.
[0024] In the description of the present application, it should be understood that the terms “center”, “longitudinal”, “transverse”, “length”, “width”, “thickness”, “upper”, “lower”, “front”, “back”, “left”, “right”, “vertical”, “horizontal”, “top”, “bottom”, “inner”, “outer”, “clockwise”, “counterclockwise” and the like indicate the orientation or positional relationship shown in the drawings, and are only used to facilitate the description of the present application and simplify the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application.
[0025] In the description of the present application, it should be noted that unless otherwise explicitly specified and limited, the terms “mounting”, “connection”, “connection”, “setting” should be understood broadly, for example, it can be fixedly connected, set, or detachably connected, set, or integrally connected, set, and can refer to direct connection or indirect connection. For those skilled in the art, the specific meaning of the above terms in the present patent can be understood according to the specific circumstances.
[0026] Please refer to Figures 1-9 , which is an embodiment structure provided by the present application.
[0027] The present application is based on a substrate integrated suspended line (SISL) structure, which utilizes its low-loss characteristics and symmetric structure to realize a layer of feeding network to simultaneously excite upper and lower layer radiation structures to achieve high-gain bidirectional radiation.
[0028] Specifically, the application includes S1-S7 layers, wherein S1 and S7 layers are isolation structures of the arrayed radiating structure for suppressing mutual coupling between array elements. S2 and S6 layers are the arrayed radiating structure. S3 and S5 layers are cavity structures of the array feed network, and S4 layer is a feed network structure of the array antenna. After the excitation signal is fed into the feed network, the radiating structures of the top layer and the bottom layer in the array antenna are excited to realize bidirectional radiation.
[0029] In the application, the dielectric substrate materials of S1 layer, S2 layer, S3 layer, S5 layer, S6 layer and S7 layer are FR4, and the dielectric substrate material of S5 is Rogers 4350B. The antenna array is composed of 7 layers of dielectric substrates. S1 and S2 layers are bidirectional radiation array isolation structures, which are loaded above the radiating structure and can suppress the coupling between array elements of the array antenna and improve the array gain. S2 and S6 layers are radiating structures, and the array radiating structure is mainly composed of 64 array element radiating structures. The array element radiating structure is mainly composed of upper and lower metal structures. The upper metal structure S2_1 is mainly composed of 12 small square patches and rectangular patches on both sides. The square patches are connected to the lower metal S2_2 through the metallized via. The lower metal of each array element corresponds to two rectangular slots, and the metallized via is on both sides of the rectangular slot. S3 and S5 layers are cavity structures of the feed network structure, and each small cavity corresponds to an array element. S4 layer is a feed network structure of the array antenna, which is mainly composed of 1 / 64 feed network S4_1 and unit feed structure S4_2. The unit feed is mainly formed by loading a ladder-shaped branch through two main transmission lines. In order to realize the excitation of the upper and lower radiating structures, the upper and lower metal structures of the S4 layer feed structure are the same structure, and the upper and lower metals are connected through the metallized via. S4_1 is the feed network of the array, which adopts T-type power division network, and other types of feed network such as Wilkinson power division network can also be used.
[0030] The above shows and describes the basic principles, main features and advantages of the application. Those skilled in the art should understand that the application is not limited to the above examples, and the above examples and descriptions in the specification are only preferred examples of the application and are not intended to limit the application. Without departing from the spirit and scope of the application, various changes and improvements can be made to the application, and these changes and improvements all fall within the scope of the claimed application. The scope of protection of the application is defined by the appended claims and their equivalents.
Claims
1. A bidirectional radiating array antenna based on SISL, characterized in that, By utilizing the multilayer structure of SISL transmission lines, which features symmetry between upper and lower layers, bidirectional radiation is achieved by simultaneously exciting the upper and lower radiating structures through the middle layer feeding structure. The bidirectional radiating array antenna includes layers S1-S7, wherein layers S1 and S7 are isolation structures of the array's radiating structure, used to suppress mutual coupling between array elements; layers S2 and S6 are the array's radiating structure; layers S3 and S5 are the cavity structures of the array's feed network; and layer S4 is the array antenna's feed network structure. After the excitation signal is fed into the feed network, it excites the top and bottom radiating structures of the array antenna to achieve bidirectional radiation. The array radiation structure consists of 64 array element radiation structures, which are composed of upper and lower metal layers. The upper metal layer consists of 12 small square patches and rectangular patches on both sides. The square patches are connected to the lower metal layer through metallized vias. The lower metal layer of each array element corresponds to two rectangular slots, and the metallized vias are located on the upper and lower sides of the rectangular slots. In layers S3 and S5, each small cavity corresponds to an array element; The S4 layer consists of a 1-to-64 feeder network and a unit feeder structure. The unit feeder is formed by loading trapezoidal branches on two main transmission lines. The upper and lower metal structures of the S4 layer feeder structure are identical, and the upper and lower metals are connected by metallized vias.
2. The SISL-based bidirectional radiating array antenna according to claim 1, characterized in that, The S1 and S2 layers are loaded above the radiating structure to suppress coupling between array antenna elements and thus improve array gain.
3. The SISL-based bidirectional radiating array antenna according to claim 1, characterized in that, The power supply network of the array adopts a time-T type power divider network.
Citation Information
Patent Citations
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