Optical amplifier, optical assembly, optical module, optical communication network system, and probe device

Abstract

The embodiment of the application provides an optical amplifier, an optical assembly, an optical module, an optical communication network system and a detection device, relates to the technical field of semiconductors, and is used for solving the problem of one-way light emission of the optical amplifier. The optical amplifier comprises a waveguide and a photonic crystal. The waveguide comprises a core region and a cladding region arranged at the periphery of the core region. The waveguide further comprises an incident light side, a first light emission side and a second light emission side. The photonic crystal is arranged in the cladding region of the waveguide. The core region is located between the incident light side and the first light emission side, and the photonic crystal is located between the second light emission side and the core region. The photonic crystal is used for receiving incident light from the incident light side and emitting first emitted light and second emitted light. The first emitted light is emitted from the first light emission side, and the second emitted light is emitted from the second light emission side.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to an optical amplifier, optical component, optical module, optical communication network system and detection device. Background Technology

[0002] Optical amplifiers are widely used in optical communication and optical sensing fields. For example, they can be used for optical signal amplification, signal regeneration, wavelength conversion, and pulse reshaping. Optical amplifiers are easy to integrate and can be monolithically integrated with lasers, modulators, and other components, making them crucial in the field of optical chips.

[0003] However, traditional optical amplifiers emit light in one direction only and cannot be set up with a detection end, which limits the application range of optical amplifiers and makes it impossible to confirm the working status of optical amplifiers. Summary of the Invention

[0004] This application provides an optical amplifier, an optical component, an optical module, an optical communication network system, and a detection device to alleviate the problem of unidirectional light output from the optical amplifier.

[0005] To achieve the above objectives, this application adopts the following technical solution:

[0006] A first aspect of this application provides an optical amplifier, including a waveguide and a photonic crystal. The waveguide includes a core region and a cladding region disposed around the core region. The waveguide also includes an incident light side, a first emitting light side, and a second emitting light side. The photonic crystal is disposed within the cladding region of the waveguide. The core region is located between the incident light side and the first emitting light side, and the photonic crystal is located between the second emitting light side and the core region. The photonic crystal is used to receive incident light from the incident light side and to emit a first emitted light and a second emitted light. The first emitted light is emitted from the first emitting light side, and the second emitted light is emitted from the second emitting light side.

[0007] The optical amplifier provided in this application embodiment has a photonic crystal disposed within the cladding region of the waveguide. After the incident light passes through the photonic crystal, it is transmitted through the photonic crystal to produce a first emitted light and a second emitted light. In other words, the optical amplifier provided in this application embodiment can achieve bidirectional light output, and the output ratio of the first emitted light and the second emitted light can be adjusted. In addition, the optical amplifier provided in this application embodiment can confirm the operating state of the optical amplifier by detecting the emitted light from one of the output sides.

[0008] In one possible implementation, the first outgoing light is transmitted through the photonic crystal, and the second outgoing light is reflected from the photonic crystal. In this way, the first and second outgoing light rays that emerge after the incident light passes through the photonic crystal can exit from two different directions.

[0009] In one possible implementation, the photonic crystal is located on the surface of the envelope region. This allows for a further reduction in the divergence angle of the second emitted light.

[0010] In one possible implementation, the photonic crystal is located on one side of the core region along the thickness direction of the waveguide. This allows the first and second emitted beams to exit perpendicularly, increasing the flexibility of the optical amplifier packaging.

[0011] In one possible implementation, the edge of the photonic crystal does not extend beyond the edge of the core region along a first direction; the first direction is perpendicular to the extension direction of the waveguide and also perpendicular to the thickness direction of the waveguide. This allows for an increase in the intensity of the first and second emitted light beams.

[0012] In one possible implementation, the size of the photonic crystal along a first direction is the same as the size of the core region along the first direction; the first direction is perpendicular to the extension direction of the waveguide and also perpendicular to the thickness direction of the waveguide. This allows for further improvement in the intensity of the first and second emitted light beams.

[0013] In one possible implementation, there is a gap between the photonic crystal and the core region. This prevents material from the photonic crystal from diffusing into the core region.

[0014] In one possible implementation, the optical amplifier also includes a buffer layer located between the core region and the cladding region. This prevents material from the photonic crystal from diffusing into the core region.

[0015] In one possible implementation, the photonic crystal includes a third emitting side from which the second emitted light is emitted; the third emitting side includes multiple circular emitting apertures. This reduces the divergence angle of the second emitted light.

[0016] In one possible implementation, the waveguide includes any one of a ridge waveguide, a rectangular waveguide, or a buried waveguide. This allows for a variety of waveguide implementations.

[0017] In one possible implementation, the waveguide includes a ridge waveguide; the ridge waveguide includes a planar portion and a ridge-shaped portion disposed on the planar portion; the core region includes a portion of the planar portion covered by the ridge-shaped portion, and the envelope region includes the ridge-shaped portion and the portion of the planar portion excluding the core region; a photonic crystal is disposed within the ridge-shaped portion. In this way, the photonic crystal can be disposed within the ridge waveguide.

[0018] In one possible implementation, a photonic crystal includes a two-dimensional photonic crystal or a three-dimensional photonic crystal. Thus, there are multiple ways to implement a photonic crystal.

[0019] A second aspect of the embodiments of this application provides an optical component, including an optical amplifier as described in any of the first aspects and a light source; the light source provides an optical signal to the optical amplifier.

[0020] The optical component provided in the second aspect of the embodiments of this application includes the optical amplifier of any one of the first aspects, and its beneficial effects are the same as those of the optical amplifier, which will not be repeated here.

[0021] A third aspect of this application provides an optical module, including an optical receiving component and an optical transmitting component, wherein the optical receiving component receives an optical signal transmitted by the optical transmitting component; the optical receiving component includes the optical component as described in the second aspect.

[0022] The optical module provided in the third aspect of the embodiments of this application includes the optical component of the second aspect, and its beneficial effects are the same as those of the optical component, which will not be repeated here.

[0023] A fourth aspect of this application provides an optical module, including an optical receiving component and an optical transmitting component, wherein the optical receiving component receives an optical signal transmitted by the optical transmitting component; the optical receiving component includes the optical component as described in the second aspect.

[0024] The optical module provided in the fourth aspect of the embodiments of this application includes the optical component of the second aspect, and its beneficial effects are the same as those of the optical component, which will not be repeated here.

[0025] A fifth aspect of the embodiments of this application provides an optical communication network system, including at least two optical communication devices and optical fibers; the optical communication devices are connected to each other via optical fibers; the optical communication devices include optical modules as described in the third or fourth aspect.

[0026] The optical communication network system provided in the fifth aspect of the embodiments of this application includes the optical module of the third or fourth aspect, and its beneficial effects are the same as those of the optical module, which will not be repeated here.

[0027] In one possible implementation, the optical communication network system includes a passive optical fiber network system; at least two optical communication devices include an optical line terminal, an optical network unit, and an optical network terminal, with the optical network unit connecting the optical line terminal and the optical network terminal.

[0028] A sixth aspect of the embodiments of this application provides a detection device, including an optical amplifier and a receiver as described in the first aspect; the receiver is used to receive the optical signal emitted by the optical amplifier.

[0029] The detection device provided in the sixth aspect of the embodiments of this application includes the optical amplifier of any one of the first aspects, and its beneficial effects are the same as those of the optical amplifier, which will not be repeated here. Attached Figure Description

[0030] Figure 1This application provides a schematic diagram of the structure of an optical communication network system according to an embodiment of the present application.

[0031] Figure 2 This is a schematic diagram of the structure of an optical amplifier provided in an embodiment of this application;

[0032] Figure 3 This is a schematic diagram of the structure of an optical amplifier provided in an embodiment of this application;

[0033] Figure 4 This is a schematic diagram of the structure of an optical amplifier provided in an embodiment of this application;

[0034] Figure 5 This is a schematic diagram of the structure of another optical amplifier provided in an embodiment of this application;

[0035] Figure 6 This is a schematic diagram of the structure of another optical amplifier provided in an embodiment of this application;

[0036] Figure 7A This is a schematic diagram of the structure of another optical amplifier provided in an embodiment of this application;

[0037] Figure 7B This is a schematic diagram of the structure of another optical amplifier provided in an embodiment of this application;

[0038] Figure 7C This is a schematic diagram of the structure of another optical amplifier provided in an embodiment of this application;

[0039] Figure 8A This is a schematic diagram of the structure of a photonic crystal provided in an embodiment of this application;

[0040] Figure 8B This is a schematic diagram of another photonic crystal structure provided in an embodiment of this application;

[0041] Figure 8C This is a schematic diagram of the structure of another photonic crystal provided in the embodiments of this application;

[0042] Figure 9 This is a schematic diagram of the structure of another optical amplifier provided in an embodiment of this application;

[0043] Figure 10A This is a schematic diagram of the structure of another optical amplifier provided in an embodiment of this application;

[0044] Figure 10B This is a schematic diagram of the structure of another optical amplifier provided in an embodiment of this application;

[0045] Figure 10C This is a schematic diagram of the structure of another optical amplifier provided in an embodiment of this application;

[0046] Figure 11 This is a schematic diagram of the structure of another optical amplifier provided in an embodiment of this application;

[0047] Figure 12A A schematic diagram of an electronic device provided in an embodiment of this application;

[0048] Figure 12B This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application;

[0049] Figure 13A This is a schematic diagram of the structure of an optical component provided in an embodiment of this application;

[0050] Figure 13B This is a schematic diagram of another optical component provided in an embodiment of this application;

[0051] Figure 13C This is a schematic diagram of the structure of another optical component provided in an embodiment of this application;

[0052] Figure 14A This is a schematic diagram of the structure of another optical component provided in an embodiment of this application;

[0053] Figure 14B This is a schematic diagram of an on-chip optical frequency comb provided in an embodiment of this application;

[0054] Figure 15 This is a schematic diagram of a gas detection principle provided in an embodiment of this application.

[0055] Figure Labels

[0056] 1-Optical communication network system; 2-Optical line terminal; 3-Optical distribution network; 4-Optical network unit; 5-Optical network terminal; 10-Optical amplifier; 11-First transmission fiber; 12-Second transmission fiber; 21-First optical element; 22-Second optical element; 100-Waveguide; 200-Photonic crystal; 110-Core region; 120-Cover region; 121-Lower cover region; 122-Upper cover region; 101-Input side; 102-First output side; 103-Second output side; 20-Electronic device; 30-Optical component; 310-Substrate; 320-Laser; 330-Modulator; 340-Micro ring. Detailed Implementation

[0057] The technical solutions of the embodiments of this application will be described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments.

[0058] Hereinafter, the terms "second," "first," etc., are used for descriptive convenience only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined with "second," "first," etc., may explicitly or implicitly include one or more of that feature. In the description of this application, unless otherwise stated, "a plurality of" means two or more.

[0059] Furthermore, in the embodiments of this application, directional terms such as "upper," "lower," "left," and "right" may be defined relative to the orientation in which the components are schematically placed in the accompanying drawings. It should be understood that these directional terms can be relative concepts, used for relative description and clarification, and can change accordingly based on the orientation of the components in the accompanying drawings.

[0060] In the embodiments of this application, unless otherwise explicitly specified and limited, the term "connection" should be interpreted broadly. For example, "connection" can be a fixed connection, a detachable connection, or an integral part; it can be a direct connection or an indirect connection through an intermediate medium. Furthermore, the term "coupled connection" can be a direct electrical connection or an indirect electrical connection through an intermediate medium. The term "contact" can be direct contact or indirect contact through an intermediate medium.

[0061] In this embodiment of the application, "and / or" describes the relationship between associated objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone, where A and B can be singular or plural. The character " / " generally indicates that the preceding and following associated objects have an "or" relationship.

[0062] This application provides an optical communication network system. For example... Figure 1 As shown, the optical communication network system 1 mainly includes at least two optical communication devices and optical fibers connecting the optical communication devices.

[0063] Optical communication network systems have become the mainstream communication network systems. For example, in optical communication network system 1, the access network (AN) uses fiber optic access (FTTx), which is also called optical access network (OAN). The fiber optic access methods of the fiber optic access network include fiber to the cabinet (FTTCab), fiber to the curb (FTTC), fiber to the building (FTTB), and fiber to the home (FTTH).

[0064] In some embodiments, the optical communication network system 1 described above is integrated into an electronic device. This electronic device may include, for example, a server, a switch, a fiber optic network interface card (NIC), and a fiber optic transceiver. The optical communication network system 1 can be integrated into the same electronic device or separately integrated into different electronic devices. This application does not limit this; any appropriate configuration can be made according to the actual situation.

[0065] For example, when a passive optical network (PON) is used as an optical communication network system, the optical communication equipment may include any one of an optical line terminal (OLT), an optical network unit (ONU), or an optical network terminal (ONT).

[0066] This application does not limit the specific type and structure of the optical communication network system 1 and the optical communication equipment; they can be reasonably set according to the actual situation.

[0067] The following is a schematic illustration using a passive optical fiber network as an example of an optical communication network system. Figure 1 As shown, PON includes an optical line terminal 2, an optical distribution network (ODN) 3, an optical network unit 4, and an optical network terminal 5.

[0068] OLT2 is located at the central control station, and ODN3 is located on the user side. ODN3 is used to connect OLT2 and ONU4. The optical devices in OLT2 and ONU4 are used for photoelectric conversion and transmission of network signals.

[0069] In some embodiments, such as Figure 1 As shown, ONT5 and ONU4 are located in different positions on the user side, but they perform similar functions.

[0070] ODN3 consists of an optical splitter (SPL) and optical fibers. The function of the optical splitter is to split a single beam of light into two beams according to a certain splitting ratio, thereby transmitting the two beams to different ONU4 / ONT5. Generally, the more optical splitters cascaded in ODN3, the more times the light is split, and the more beams can be separated.

[0071] For example, OLT2 is located at the central control station, and ODN3 is located on the user side. ODN3 is used to connect OLT2 and ONU4. The optical modules in OLT2 and ONU4 are used to perform photoelectric conversion and transmission of network signals. ONT5 and ONU4 are located at different locations on the user side, but perform similar functions.

[0072] The optical module can be integrated into the aforementioned ONU4 or ONT5, or it can be integrated into the aforementioned OLT2.

[0073] For example, the optical module may include a small form factor (SFP) optical module, an SFP+ optical module, or an XFP optical module, etc. This application does not limit this.

[0074] In some embodiments, the optical module includes a transmitting optical subassembly (TOSA) and a receiving optical subassembly (ROSA). Both the transmitting and receiving optical subassemblies are electrically connected to a printed circuit board.

[0075] For example, a bi-directional optical subassembly (BOSA) that integrates an optical emitting component and an optical receiving component can be regarded as an optical component or as the aforementioned optical module.

[0076] For example, the light emitting component includes an electro-optical conversion chip and a photodiode (e.g., a monitoring photodiode) (MD). The electro-optical conversion chip and the monitoring photodiode are packaged together to form the light emitting component. The monitoring photodiode is used to monitor the optical power output by the laser.

[0077] The electro-optical conversion chip receives electrical signals carrying transmission information transmitted from the printed circuit board (PCB), converts the electrical signals into optical signals, and then outputs the optical signals through optical devices.

[0078] For example, the optical receiving component includes a photoelectric conversion chip and an amplifier. The photoelectric conversion chip and the amplifier are packaged together to form the optical receiving component. The photoelectric conversion chip can be, for example, a chip made of a photodiode (PD), a chip made of a PIN diode, or a chip made of an avalanche photodiode (APD). The photoelectric conversion chip converts the received optical signal into an electrical signal, then transmits the electrical signal to the amplifier, the amplifier amplifies the electrical signal, and then transmits the amplified electrical signal to a printed circuit board.

[0079] Based on this, the embodiments of this application also illustrate an optical amplifier, which can be applied to any of the above-mentioned optical communication network systems, optical modules or optical components.

[0080] For example, an optical amplifier is used in an optical emitting component. In this case, the optical amplifier amplifies the optical signal transmitted by the light source and outputs the optical signal through an optical device.

[0081] Alternatively, for example, an optical amplifier is used in an optical receiving component. In this case, the optical amplifier amplifies the received optical signal, then converts the optical signal into an electrical signal for further processing.

[0082] In some embodiments, the optical component further includes an optical amplifier. The optical amplifier amplifies the optical signal.

[0083] The aforementioned optical amplifiers, such as semiconductor optical amplifiers (SOAs), are widely used in the fields of optical communication and optical sensing. For example, optical amplifiers can be used for applications such as optical signal amplification, optical signal regeneration, wavelength conversion, and pulse reshaping. For instance, optical amplifiers can be used in the aforementioned electronic devices or wearable devices.

[0084] For example, semiconductor optical amplifiers, as a type of semiconductor chip, have the advantage of being easy to integrate. They can be integrated with lasers, modulators, and other monolithic components to fabricate relatively complex chips, and thus play an important role in the field of optical chips.

[0085] This application illustrates an optical amplifier, such as... Figure 2 As shown, the optical amplifier 10 includes a core region 110 and a cladding region 120. The cladding region 120 is located around the core region 110.

[0086] The envelope region 120 may completely surround the periphery of the core region 110. Alternatively, the envelope region 120 may also surround only a portion of the periphery of the core region 110. This application embodiment does not limit this.

[0087] For example, such as Figure 2 As shown, the envelope region 120 is located on opposite sides of the core region 110. A first optical signal S1 is input from one side of the core region 110 and propagates within the core region 110. Simultaneously, a current I is applied to the side of the envelope region 120 away from the core region 110. At this time, the first optical signal S1 undergoes stimulated emission within the core region 110, resulting in optical signal amplification, and a second optical signal S2 is output from the other side of the core region 110. The second optical signal S2 is the first optical signal S1 amplified by the optical amplifier 10.

[0088] like Figure 3 As shown, the first optical signal S1 is input to the optical amplifier 10 via the first transmission fiber 11, and after amplification, the second optical signal S2 is output via the second transmission fiber 12. The second optical signal S2 is the amplified first optical signal S1.

[0089] For example, such as Figure 4 As shown, optical elements are also provided on the light input side and light output side of the optical amplifier 10. For example... Figure 4 As shown, the first optical signal S1 is transmitted to the first optical element 21 through the first transmission optical fiber 11. The first optical element 21 converges the first optical signal S1 and transmits it to the optical amplifier 10. Then, after being amplified by the optical amplifier 10, the second optical signal S2 is output. The second optical signal S2 is then diverged by the second optical element 22 and transmitted to the second transmission optical fiber 12 for output.

[0090] like Figure 2 As shown, the optical amplifier 10 emits light along the extension direction of the core region 110. That is, the optical amplifier 10 has only one light emission direction. In other words, the above-mentioned optical amplifier is unidirectional.

[0091] This application also illustrates an optical amplifier, such as... Figure 5 As shown, a large number of photonic crystal 200 air holes are etched on both sides of the waveguide 100, and an optical transmission channel is reserved in the middle of the waveguide 100 to form an optical transmission channel similar to a strip waveguide structure.

[0092] However, the optical amplifier 10 has a relatively complex structure and high manufacturing cost.

[0093] Furthermore, since the aforementioned optical amplifiers 10 are all unidirectional light emitters, a detection end cannot be set up, which limits the application range of the optical amplifiers 10 and makes it impossible to confirm the operating status of the optical amplifiers 10. In addition, the light divergence angle of the optical amplifiers 10 is relatively large (10° to 25°), so an additional beam shaping coupling element (the aforementioned second optical coupling element) needs to be set on the light emission side of the optical amplifiers 10 to couple the light signal emitted after amplification by the optical amplifier into the optical fiber.

[0094] Therefore, in order to solve the problem of unidirectional light output from optical amplifiers, embodiments of this application provide an optical amplifier. For example... Figure 6 As shown, the optical amplifier 10 includes a waveguide 100 and a photonic crystal 200. The waveguide 100 includes a core region 110 and a cladding region 120 disposed around the core region 110. The waveguide 100 also includes an input light side 101, a first output light side 102, and a second output light side 103. The photonic crystal 200 is disposed within the cladding region 120 of the waveguide 100. The core region 110 is located between the input light side 101 and the first output light side 102, and the photonic crystal 200 is located between the second output light side 103 and the core region 110.

[0095] The photonic crystal 200 is used to receive incident light from the incident light side 101 and emit a first emitted light and a second emitted light. The first emitted light is emitted from the first emitted light side 102, and the second emitted light is emitted from the second emitted light side 103.

[0096] In other words, along the extension direction of the core region 110, the light-incident side 101 and the first light-emitting side 102 are located on both sides of the core region 110.

[0097] In some embodiments, waveguide 100 may include any one of a ridge waveguide, a rectangular waveguide, or a buried waveguide.

[0098] For example, such as Figure 7A As shown, waveguide 100 is a ridge waveguide. The ridge waveguide includes a flat section and a ridge-shaped section. The ridge-shaped section is disposed on the flat section.

[0099] In other words, the protruding part of the ridge waveguide is called the ridge section, and the part of the ridge waveguide other than the ridge section is called the planar section.

[0100] For ease of illustration, the direction from the ridge section to the planar section is called the thickness direction z of the waveguide. In other words, the direction from the planar section to the ridge section is also called the thickness direction z of the waveguide.

[0101] For ridge waveguides, such as Figure 7A As shown, the core region 110 includes a portion of the flat plate covered by the ridge portion, and the envelope region 120 includes the ridge portion and the portion of the flat plate portion other than the core region 110.

[0102] In other words, the planar portion of the ridge waveguide that is covered by the ridge-shaped portion is the core region 110 of the ridge waveguide. The planar portion of the ridge waveguide that is not covered by the ridge-shaped portion, and the ridge-shaped portion of the ridge waveguide, are the envelope region 120 of the ridge waveguide.

[0103] The photonic crystal 200 is disposed within the envelope region 120 of the ridge waveguide. For example, the photonic crystal 200 may be disposed within the ridge portion of the ridge waveguide. Alternatively, for example, the photonic crystal 200 may also be disposed within the planar portion of the ridge waveguide. It is clarified here that the photonic crystal 200 is disposed on both sides of the planar portion, i.e., within the envelope region 120 of the planar portion.

[0104] Or, for example, such as Figure 7B As shown, waveguide 100 is a rectangular waveguide.

[0105] like Figure 7B As shown, the rectangular waveguide includes a core region 110 and a cladding region 120 surrounding the core region 110.

[0106] For example, the photonic crystal 200 can be disposed within the envelope 120 of the rectangular waveguide. This application embodiment does not limit the location of the photonic crystal 200; it can be disposed reasonably according to the actual situation.

[0107] Or, for example, such as Figure 7C As shown, waveguide 100 is a buried waveguide.

[0108] like Figure 7C As shown, the buried waveguide includes a lower cladding region 121, a core region 110, and an upper cladding region 122 arranged in sequence.

[0109] The photonic crystal 200 can be disposed in the upper cladding region 122 of the buried waveguide. Alternatively, the photonic crystal 200 can also be disposed in the lower cladding region 121 of the buried waveguide. This application embodiment does not limit this, and can be reasonably disposed according to the actual situation.

[0110] It should be noted that the type of waveguide 100 included in the optical amplifier 10 is not limited in this embodiment; it can be reasonably set according to the actual situation. For ease of illustration, the waveguide 100 is illustrated below as a ridge waveguide.

[0111] Regarding photonic crystal 200, please refer to [link / reference]. Figure 6 The photonic crystal 200 is disposed within the envelope region 120 of the waveguide 100. That is, the photonic crystal 200 is disposed within the envelope region 120 of the waveguide 100 described above.

[0112] In this embodiment of the application, the photonic crystal 200 is used to receive incident light and emit a first emitted light and a second emitted light.

[0113] In this process, incident light enters the photonic crystal 200 from the light-incident side 101 of the waveguide 100, and then the first outgoing light emitted from the photonic crystal 200 is emitted from the first outgoing side 102 of the waveguide 100, and the second outgoing light emitted from the photonic crystal 200 is emitted from the second outgoing side 103 of the waveguide 100.

[0114] For example, the first emitted light is transmitted from the photonic crystal 200, and the second emitted light is reflected from the photonic crystal 200.

[0115] In other words, the photonic crystal 200 is disposed within the waveguide 100, and can be regarded as a semi-transparent and semi-reflective mirror disposed within the waveguide 100. The photonic crystal 200 can transmit incident light disposed on it.

[0116] To facilitate understanding, let's first give a brief introduction to photonic crystals. A photonic crystal is a periodic dielectric structure with a photonic band gap (PBG). A photonic band gap refers to the frequency range within which waves cannot propagate; that is, the structure itself possesses a "bandgap."

[0117] In other words, in dielectric materials with periodically arranged dielectric constants, after electromagnetic waves are scattered by the dielectric material, the intensity of electromagnetic waves in certain bands will decrease exponentially due to destructive interference, making them unable to propagate within the dielectric material. This is equivalent to forming a band gap in the spectrum, giving the dispersion relation a photonic band structure. Dielectric materials with photonic band structures are called photonic crystals, or optical bandgap systems or PBG photonic crystal structures.

[0118] For example, such as Figures 8A-8C As shown, the periodic structure of photonic crystals, arranged in a spatial periodic manner, can include one-dimensional photonic crystals, two-dimensional photonic crystals, and three-dimensional photonic crystals.

[0119] It is clarified here that the photonic crystal in the optical amplifier provided in the embodiments of this application includes any one of two-dimensional photonic crystal or three-dimensional photonic crystal.

[0120] In some embodiments, such as Figure 9 As shown, along the thickness direction z of waveguide 100, photonic crystal 200 is located on one side of 110.

[0121] In other words, for a ridge waveguide, the photonic crystal 200 is disposed in the ridge section of the ridge waveguide.

[0122] For ease of illustration, such as Figure 9 As shown, the thickness direction z of waveguide 100 is referred to as the third direction z, and the extension direction of waveguide 100 is referred to as the second direction y. The direction perpendicular to both the thickness direction z and the extension direction y of waveguide 100 is referred to as the first direction x. That is, the first direction x, the second direction y, and the third direction z are perpendicular to any pair of other directions.

[0123] Continue to refer to Figure 9Along the extension direction y of waveguide 100, that is, along the second direction y, the position of the photonic crystal 200 is not limited in this embodiment. For example, the photonic crystal 200 may be positioned midway between the light-incident side 101 and the first light-emitting side 102. Alternatively, for example, the photonic crystal 200 may be positioned closer to the light-incident side 101. Alternatively, for example, the photonic crystal 200 may also be positioned closer to the first light-emitting side 102.

[0124] like Figure 9 As shown, along the first direction x, the edge of the photonic crystal 200 does not extend beyond the edge of the core region 110.

[0125] In other words, along the third direction z, the projection of the photonic crystal 200 lies within the projection of the core region 110.

[0126] For example, such as Figure 10A As shown, the size d1 of the photonic crystal 200 along the first direction x is the same as the size d2 of the core region 110 along the first direction x.

[0127] In other words, along the first direction x, the edge of the photonic crystal 200 coincides with the edge of the core region 110.

[0128] Alternatively, along the third direction z, the projection of the photonic crystal 200 coincides with the projection of the core region 110.

[0129] This will improve the light output efficiency of the optical amplifier 10.

[0130] Or, for example, such as Figure 10B As shown, the size d1 of the photonic crystal 200 along the first direction x is smaller than the size d2 of the core region 110 along the first direction x.

[0131] For example, such as Figure 10B As shown, the photonic crystal 200 can be located on the surface of the envelope region 120.

[0132] In other words, the photonic crystal 200 is exposed on the surface of the envelope region 120, which is far from the core region 110.

[0133] It should be noted that the surface of the photonic crystal 200 exposed in the envelope 120 is the surface of the second light-emitting side 103 of the waveguide 100.

[0134] Or, for example, such as Figure 10C As shown, the photonic crystal 200 can be located within the envelope region 120.

[0135] In other words, the envelope 120 surrounds the photonic crystal 200.

[0136] In some embodiments, such as Figure 10CAs shown, there is a gap between the photonic crystal 200 and the core region 110.

[0137] In this way, the spacing between the photonic crystal 200 and the core region 110 can prevent the material of the photonic crystal 200 from diffusing into the core region 110, thus avoiding affecting the light output of the optical amplifier 10.

[0138] like Figure 11 As shown, the optical amplifier 10 also includes a buffer layer 300. The buffer layer 300 is located between the core region 110 and the envelope region 120.

[0139] For example, the buffer layer 300 can be a material film layer of the waveguide 100.

[0140] In this way, the buffer layer 300 is disposed between the core region 110 and the cladding region 120, which can prevent the material of the photonic crystal 200 from diffusing into the core region 110 and thus avoid affecting the light output of the optical amplifier 10.

[0141] In some embodiments, the photonic crystal 200 further includes a third emitting side. The second emitted light is emitted from the third emitting side.

[0142] The third light-emitting side includes multiple circular light-emitting holes.

[0143] In this way, the circular exit aperture can reduce the divergence angle of the emitted light, enabling direct coupling between the emitted light and the light receiving element without the need for a separate optical coupling element. For example, the divergence angle of the emitted light is less than 1°. That is, the divergence angle of the second emitted light from the optical amplifier 10 is less than 1°. Simultaneously, a corresponding photonic crystal 200 can be designed to filter out noise from the optical amplifier 10, such as amplifier spontaneous emission noise (ASE), thereby improving the quality of the emitted optical signal.

[0144] In some embodiments, the optical amplifier 10 further includes an anti-reflective (AR) high-transmittance film.

[0145] For example, an anti-reflective high-transmittance film is disposed on the light-incident side 101 of the waveguide 100.

[0146] This increases the light transmittance.

[0147] The optical amplifier 10 provided in this application embodiment receives incident light from the incident light side 101. Injecting current into the optical amplifier 10 causes population inversion of the incident light, thus amplifying the incident light. The amplified optical signal then passes through a photonic crystal 200, from which first and second emitted light are emitted.

[0148] Furthermore, the optical amplifier 10 of this embodiment can adjust the output ratio of the first emitted light and the second emitted light by changing the photonic crystal 200, and can infer the optical parameters of the other emitted light by detecting the optical parameters of either the first emitted light or the second emitted light. For example, the optical parameters of the emitted light may include the light intensity of the emitted light.

[0149] For example, a detection device can be provided on the first light-emitting side 102 or the second light-emitting side 103 to detect the optical parameters of the emitted light, thereby confirming the working status of the optical amplifier 10.

[0150] The optical amplifier 10 provided in this embodiment has a photonic crystal 200 disposed within the envelope 120 of the waveguide 100. After the incident light passes through the photonic crystal 200, it is transmitted as a first emitted light and a second emitted light. In other words, the optical amplifier 10 provided in this embodiment can achieve bidirectional light output, and the output ratio of the first emitted light and the second emitted light can be adjusted by designing a corresponding photonic crystal 200. Furthermore, the optical amplifier 10 provided in this embodiment can confirm its operating state by detecting the emitted light from one of the output sides.

[0151] Based on this, embodiments of this application also provide an electronic device. This electronic device can be, for example, a smart wearable product (e.g., a smartwatch, a smart bracelet). Figure 12A As shown, the electronic device 20 includes a light source and the aforementioned optical amplifier 10. That is, the aforementioned optical amplifier 10 is integrated into the electronic device 20.

[0152] For example, such as Figure 12B As shown, the incident light of the optical amplifier 10 enters from one side of the electronic device 20, and the light emitted from the second light-emitting side 103 of the optical amplifier 10 can perform photosensing on an obstruction (e.g., human skin) to achieve a detection function. The optical amplifier 10 amplifies the optical signal to improve the penetration of the emitted light. Simultaneously, the photonic crystal 200 within the optical amplifier 10 can be used to change the emission direction of the emitted light and filter out ASE noise in the emitted light, thereby improving the fidelity of the emitted light signal.

[0153] In other embodiments, this application also provides a system-on-a-chip (SoC) for emitting light. This SoC can be viewed as a light-emitting component. For example... Figure 13A As shown, the optical component 30 includes a substrate 310, a laser 320 disposed on the substrate 310, and an optical amplifier 10 disposed on the substrate 310. The laser 320 and the optical amplifier 10 are disposed on the same side of the substrate 310.

[0154] The material of the substrate 310 is not limited in this application embodiment. The material of the substrate 310 may include any one or more combinations of gallium arsenide (GaAs), indium phosphide (InP), or silicon on an insulating substrate (SOI).

[0155] For example, laser 320 may include either a distributed feedback Bragg laser diode (DFB) or a distributed Bragg reflector laser diode (DBR). This application does not limit this to any particular type.

[0156] like Figure 13A As shown, the laser 320 is positioned on the input side of the optical amplifier 10. That is, the optical amplifier 10 is positioned on the output side of the laser 320. The laser 320 can serve as a light source, providing an optical signal to the optical amplifier 10.

[0157] For example, such as Figure 13A As shown, the optical component 30 includes an optical amplifier 10.

[0158] Or, for example, such as Figure 13B As shown, the optical component 30 includes a plurality of optical amplifiers 10. The plurality of optical amplifiers 10 can be sequentially disposed on the substrate 310. Alternatively, they can be stacked on the substrate 310. This application embodiment does not limit the number and stacking method of the optical components 30; they can be reasonably set according to the actual situation.

[0159] In some embodiments, such as Figure 13C As shown, the optical component 30 also includes a modulator 330. The modulator 330 is disposed on the substrate 310 and located between the laser 320 and the optical amplifier 10.

[0160] For example, modulator 330 may include an electro absorption modulator (EAM).

[0161] like Figure 13C As shown, laser 320 serves as a light source to provide optical signals. Modulator 330 acts as a signal modulator, modulating the optical signal emitted by laser 320 and transmitting the modulated optical signal to optical amplifier 10. Optical amplifier 10 amplifies the received optical signal and outputs emitted light in two directions: a first emitted light along the extension direction of substrate 310 and a second emitted light perpendicular to substrate 310. One of the emitted lights can serve as a monitoring window to detect the operating status of optical component 30.

[0162] For example, the light component 30 described above can be integrated into the electronic device 20 described above (e.g., a smart wearable device), with the first emitted light serving as a monitoring window and the second emitted light used for signal detection.

[0163] The optical component 30 provided in this application embodiment includes an optical amplifier 10, which can amplify optical signals and improve the fidelity of optical signals. Its emitted light has a small divergence angle, which can improve the optical power density of the emitted light and is beneficial to the detection of the optical signal-to-noise ratio.

[0164] In other embodiments, such as Figure 14A As shown, the optical component 30 may also include a microring 340. The microring 340 is disposed on the substrate 310 and located between the laser 320 and the optical amplifier 10.

[0165] In this way, the aforementioned optical component 30 can be used for signal amplification via an on-chip optical frequency comb. For example... Figure 14B As shown, laser 320 serves as a light source to provide an optical signal. The optical signal is transmitted to microring 340, where it generates some optical solitons, exhibiting a comb-like spectral distribution. The emitted optical signal is then amplified by optical amplifier 10. Simultaneously, the aforementioned optical components can also extract certain specific wavelengths from the optical frequency comb and amplify them using optical amplifier 10.

[0166] For example, such as Figure 15 As shown, the optical component 30, which integrates an on-chip optical frequency comb, can also be used for gas detection. The transmitting end uses the optical frequency comb as a light source, selecting a specific wavelength band as the emission source. After the light source passes through the gas to be detected, the gas interacts with the light source, causing the transmitted spectrum to show missing teeth on the frequency comb. This indicates the presence of a gas or substance in the gas to be detected that strongly interacts with the wavelength band of the emission source, thus achieving gas detection.

[0167] In some other embodiments, this application also provides a detection device, including the aforementioned optical amplifier 10 and a receiver. The receiver is used to receive the optical signal emitted by the optical amplifier 10. This detection device can be applied to fields such as optical communication, scanning imaging, and lidar. This application does not impose any special limitations on the specific form of the above-described detection device.

[0168] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any changes or substitutions within the technical scope disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. An optical amplifier characterized by, The waveguide comprises a core region and a cladding region, the cladding region is arranged at the periphery of the core region; the photonic crystal is arranged in the cladding region; the waveguide further comprises an input side, a first output side and a second output side; the core region is located between the input side and the first output side, and the photonic crystal is located between the second output side and the core region; the photonic crystal is configured to receive incident light from the input side and emit first and second emitted light; the first emitted light is emitted from the first output side, and the second emitted light is emitted from the second output side. The first emitted light is transmitted through the photonic crystal, and the second emitted light is reflected by the photonic crystal. The photonic crystal is located on the surface of the cladding region. In the thickness direction of the waveguide, the photonic crystal is located on one side of the core region. In a first direction, the edge of the photonic crystal does not exceed the edge of the core region; the first direction is perpendicular to the extension direction of the waveguide and also perpendicular to the thickness direction of the waveguide.

2. The optical amplifier of claim 1, wherein, The size of the photonic crystal in the first direction is the same as the size of the core region in the first direction; the first direction is perpendicular to the extension direction of the waveguide and also perpendicular to the thickness direction of the waveguide.

3. The optical amplifier according to claim 1 or 2, characterized in that, The photonic crystal has a spacing with the core region.

4. The optical amplifier of claim 1 or 2, wherein, The optical amplifier further comprises a buffer layer between the core region and the cladding region.

5. The optical amplifier of claim 4, wherein, The photonic crystal comprises a third output side from which the second emitted light is emitted; the third output side comprises a plurality of circular output apertures.

6. The optical amplifier of claim 5, wherein, The waveguide comprises any one of a ridge waveguide, a rectangular waveguide or a buried waveguide.

7. The optical amplifier of claim 1 or 2, wherein, The waveguide comprises the ridge waveguide; the ridge waveguide comprises a flat plate portion and a ridge portion arranged on the flat plate portion; the core region comprises a portion of the flat plate portion covered by the ridge portion, and the cladding region comprises the ridge portion and a portion of the flat plate portion other than the core region; the photonic crystal is arranged in the ridge portion.

8. The optical amplifier of claim 1 or 2, wherein, The photonic crystal comprises a two-dimensional photonic crystal or a three-dimensional photonic crystal.

9. The optical amplifier of claim 1 or 2, wherein, The optical amplifier and a light source according to any one of claims 1-12; the light source provides an optical signal to the optical amplifier.

10. The optical amplifier of claim 1 or 2, wherein, The optical receiving assembly and the optical transmitting assembly, the optical receiving assembly receives an optical signal transmitted by the optical transmitting assembly; 11. The optical amplifier of claim 10, wherein, The optical receiving assembly comprises the optical assembly according to claim 13; 12. The optical amplifier of claim 1 or 2, wherein, and / or, 13. A light assembly characterized by, The optical transmitting assembly comprises the optical assembly according to claim 13.

14. An optical module characterized by comprising: The optical communication network system comprises a passive optical network system; the at least two optical communication devices comprise an optical line terminal, an optical network unit and an optical network terminal, and the optical network unit connects the optical line terminal and the optical network terminal. The optical amplifier and a receiver according to any one of claims 1-12; the receiver is configured to receive an optical signal emitted by the optical amplifier. ​ ​ 15. An optical communication network system, characterized by comprising: ​ 16. The optical communication network system of claim 15, wherein, ​ 17. A detection device, characterized by ​

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