Driving control method and system of Si / SiC hybrid device

Abstract

The invention discloses a drive control method and system for a Si / SiC hybrid device, and relates to the technical field of semiconductors, and the method comprises the steps: obtaining the conduction current of the Si / SiC hybrid device; a current interval where the conduction current is located is determined, one current interval corresponds to one driving mode, and the driving modes include only driving the Si IGBT device, only driving the SiC MOSFET device and driving the Si IGBT device or the SiC MOSFET device for different times in one switching period; and driving the Si / SiC hybrid device according to the driving mode of the current interval where the conduction current is located. According to the invention, the dynamic adjustment of the driving control mode is realized, the driving flexibility of the Si / SiC hybrid device is improved, the switching efficiency of the Si / SiC hybrid device switch is also improved, the loss of the Si / SiC hybrid device is reduced, and the compromise optimization operation of the thermal reliability and the electromagnetic compatibility is realized.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a driving control method and system for a Si / SiC hybrid device. Background Art

[0002] In the application of Si IGBT / SiC MOSFET hybrid devices, the fixed drive control mode faces special challenges, mainly because Si IGBT devices and SiC MOSFET devices each have their own unique electrical characteristics and application advantages. A single fixed drive control mode usually encounters the following problems when dealing with such a hybrid system:

[0003] First, the fixed drive control mode cannot fully utilize the complementary performance of Si IGBT devices and SiC MOSFET devices. Si IGBT devices are suitable for high voltage and high current environments, while SiC MOSFET devices perform better in high frequency and high efficiency situations. Under the fixed drive control mode, the system cannot flexibly adjust according to actual operating conditions (such as load changes, temperature changes, etc.) to utilize the advantages of each device, resulting in limited overall performance and failure to achieve the optimal energy efficiency ratio.

[0004] Secondly, in the fixed drive control mode, the switching conversion efficiency of the devices in the system is low. In addition, the switching characteristics of Si IGBT devices and SiC MOSFET devices are significantly different. For example, SiC MOSFET devices have fast switching speeds, but in some high-current applications, Si IGBT devices may be required to carry larger currents. In the fixed mode, it is impossible to adjust according to specific current requirements and switching frequency, the switching conversion efficiency is low, and it may cause the device to operate at a non-optimal operating point, increase losses, and reduce system stability and life.

[0005] Finally, the fixed drive control mode limits the application of technology development and innovation. With the development of power electronics technology, new materials and new structures of semiconductor devices continue to emerge, which requires the drive control mode to be highly flexible to adapt to new technologies. The lack of such flexibility in the fixed mode not only affects the improvement of device performance, but may also lead to a lag in technology upgrades.

[0006] Therefore, in the current related technologies, the fixed drive control mode not only lacks the flexibility of drive control, but also has problems such as low switching conversion efficiency, high switching loss and conduction loss. Summary of the invention

[0007] The purpose of the present application is to provide a drive control method and system for a Si / SiC hybrid device, which not only realizes the dynamic adjustment of the drive control mode and improves the flexibility of driving the Si / SiC hybrid device, but also improves the switching conversion efficiency of the Si / SiC hybrid device and reduces the switching loss and conduction loss of the Si / SiC hybrid device.

[0008] To achieve the above objectives, this application provides the following solutions:

[0009] In a first aspect, the present application provides a driving control method for a Si / SiC hybrid device, comprising:

[0010] Obtaining an on-current of a Si / SiC hybrid device; the Si / SiC hybrid device includes a Si IGBT device and a SiCMOSFET device;

[0011] Determine a current interval in which the on-current is located; the current interval is divided according to the rated current of the Si / SiC hybrid device; one current interval corresponds to a driving mode; the driving mode includes driving only the SiIGBT device, driving only the SiC MOSFET device, and driving the SiIGBT device or the SiC MOSFET device for different times in one switching cycle;

[0012] The Si / SiC hybrid device is driven according to a driving mode in a current interval where the on-current is located.

[0013] Optionally, the method for dividing the current interval includes:

[0014] Determine a first current interval critical value, a second current interval critical value, and a third current interval critical value according to the rated current of the Si / SiC hybrid device;

[0015] Determine a current interval in which the absolute value of the on-current is greater than or equal to 0 and less than or equal to the first current interval critical value as a first current interval;

[0016] Determine a current interval in which the absolute value of the conduction current is greater than the first current interval critical value and less than or equal to the second current interval critical value as a second current interval;

[0017] Determine a current interval in which the absolute value of the conduction current is greater than the second current interval critical value and less than or equal to the third current interval critical value as a third current interval;

[0018] A current interval in which the absolute value of the on-current is greater than the third current interval critical value and less than or equal to the absolute value of the rated current of the Si / SiC hybrid device is determined as a fourth current interval.

[0019] Optionally, determining the first current interval critical value, the second current interval critical value, and the third current interval critical value according to the rated current of the Si / SiC hybrid device specifically includes:

[0020] The rated current of the first percentage of the Si / SiC hybrid devices is determined as the critical value of the first current interval; the rated current of the second percentage of the Si / SiC hybrid devices is determined as the critical value of the second current interval; the rated current of the third percentage of the Si / SiC hybrid devices is determined as the critical value of the third current interval; the first percentage is less than the second percentage; the second percentage is less than the third percentage.

[0021] Optionally, the first percentage is 20%; the second percentage is 60%; and the third percentage is 80%.

[0022] Optionally, driving the Si / SiC hybrid device according to a driving mode of a current interval in which the on-current is located specifically includes:

[0023] When the on-current is in the first current interval, only the Si IGBT device is driven;

[0024] When the on-current is in the second current interval, only the SiC MOSFET device is driven;

[0025] When the on-current is in the third current interval, the SiCMOSFET device is driven m times in one switching cycle, and the Si IGBT device is driven n times in one switching cycle; when m=0, n=1; when m>0, n=m;

[0026] When the on-current is in the fourth current interval, the SiIGBT device is driven p times in one switching cycle, and the SiC MOSFET device is driven q times in one switching cycle; when p=0, q=1; when p>0, q=p.

[0027] Optionally, when m=1, the Si IGBT device is driven once within the time of driving the SiC MOSFET device once, and the driving time of the Si IGBT device is less than or equal to the driving time of the SiC MOSFET device;

[0028] When m=2, the Si IGBT device is driven once within the time of each driving of the SiC MOSFET device; and the driving time of each driving of the Si IGBT device is shorter than the driving time of the SiC MOSFET device.

[0029] Optionally, when p=1, the SiC MOSFET device is driven once within the time of driving the Si IGBT device once; and the driving time of the SiC MOSFET device is shorter than the driving time of the Si IGBT device.

[0030] In a second aspect, the present application provides a drive control system for a Si / SiC hybrid device, comprising:

[0031] An on-current acquisition module, used to acquire the on-current of a Si / SiC hybrid device; the Si / SiC hybrid device includes a Si IGBT device and a SiC MOSFET device;

[0032] A current interval determination module, used to determine the current interval in which the on-current is located; the current interval is divided according to the rated current of the Si / SiC hybrid device; one current interval corresponds to a driving mode; the driving mode includes driving only the Si IGBT device, driving only the SiC MOSFET device, and driving the Si IGBT device or the SiC MOSFET device for different times in one switching cycle;

[0033] A hybrid device driving module is used to drive the Si / SiC hybrid device according to a driving mode of a current interval where the on-current is located.

[0034] Optionally, the driving control system of the Si / SiC hybrid device further includes: a current interval division module;

[0035] The current interval division module comprises:

[0036] A critical value determination unit, configured to determine a first current interval critical value, a second current interval critical value, and a third current interval critical value according to a rated current of the Si / SiC hybrid device;

[0037] A first dividing unit, configured to determine a current interval in which an absolute value of an on-current is greater than or equal to 0 and less than or equal to a critical value of the first current interval as a first current interval;

[0038] A second dividing unit, configured to determine a current interval in which the absolute value of the on-current is greater than the first current interval critical value and less than or equal to the second current interval critical value as a second current interval;

[0039] A third dividing unit, configured to determine a current interval in which the absolute value of the conduction current is greater than the second current interval critical value and less than or equal to the third current interval critical value as a third current interval;

[0040] The fourth dividing unit is used to determine a current interval in which the absolute value of the on-current is greater than the third current interval critical value and less than or equal to the absolute value of the rated current of the Si / SiC hybrid device as a fourth current interval.

[0041] Optionally, the hybrid device driving module includes:

[0042] A first driving unit, configured to drive only the SiIGBT device when the on-current is in the first current interval;

[0043] A second driving unit, configured to drive only the SiCMOSFET device when the on-current is in the second current interval;

[0044] a third driving unit, configured to drive the SiC MOSFET device m times in one switching cycle and drive the Si IGBT device n times in one switching cycle when the on-current is in the third current interval; when m=0, n=1; when m>0, n=m;

[0045] The fourth driving unit is used to drive the Si IGBT device p times in one switching cycle and drive the SiC MOSFET device q times in one switching cycle when the on-current is in the fourth current interval; when p=0, q=1; when p>0, q=p.

[0046] According to the specific embodiments provided in this application, this application has the following technical effects:

[0047] The present application provides a drive control method for a Si / SiC hybrid device, which realizes dynamic adjustment of the drive control mode and improves the flexibility of driving the Si / SiC hybrid device by determining a current interval in which a conduction current is located and driving the Si / SiC hybrid device according to a drive mode in the current interval in which the conduction current is located; and since one current interval corresponds to one drive mode, and the drive modes include driving only Si IGBT devices, driving only SiC MOSFET devices, and driving Si IGBT devices or SiC MOSFET devices for different times in one switching cycle, the conversion efficiency of the Si / SiC hybrid device switch is improved, the switching loss and conduction loss of the Si / SiC hybrid device are reduced, and finally a compromise optimization operation of thermal reliability and electromagnetic compatibility performance is achieved. BRIEF DESCRIPTION OF THE DRAWINGS

[0048] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0049] Figure 1 A flow chart of a driving control method of a Si / SiC hybrid device provided in one embodiment of the present application;

[0050] Figure 2 A schematic diagram of driving modes of a Si / SiC hybrid device corresponding to four current intervals provided in an embodiment of the present application;

[0051] Figure 3 A SiC MOSFET driving mode diagram within a switching cycle provided by an embodiment of the present application;

[0052] Figure 4 A Si IGBT driving mode diagram within a switching cycle provided by an embodiment of the present application;

[0053] Figure 5 A module diagram of a drive control system for a Si / SiC hybrid device provided in one embodiment of the present application. DETAILED DESCRIPTION

[0054] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0055] In order to make the above-mentioned objects, features and advantages of the present application more obvious and easy to understand, the present application is further described in detail below with reference to the accompanying drawings and specific implementation methods.

[0056] In an exemplary embodiment, the present application provides a driving control method of a Si / SiC hybrid device, such as Figure 1 As shown, it includes steps 100 to 102. Among them:

[0057] Step 100, obtaining the on-current of a Si / SiC hybrid device, wherein the Si / SiC hybrid device includes a Si IGBT device and a SiC MOSFET device.

[0058] Step 101, determining a current interval in which the on-current is located. The current interval is divided according to the rated current of the Si / SiC hybrid device, and one current interval corresponds to a driving mode. The driving modes include driving only Si IGBT devices, driving only SiC MOSFET devices, and driving Si IGBT devices or SiC MOSFET devices for different times in one switching cycle.

[0059] Step 102 : driving the Si / SiC hybrid device according to a driving mode in a current interval where the on-current is located.

[0060] Based on the above steps, the present application realizes dynamic adjustment of the drive control mode and improves the flexibility of driving the Si / SiC hybrid device by determining the current interval in which the on-current is located and driving the Si / SiC hybrid device according to the drive mode in the current interval in which the on-current is located; and since one current interval corresponds to one drive mode, and the drive mode includes driving only Si IGBT devices, driving only SiC MOSFET devices, and driving Si IGBT devices or SiC MOSFET devices for different times in one switching cycle, the conversion efficiency of the Si / SiC hybrid device switch is improved, the switching loss and conduction loss of the Si / SiC hybrid device are reduced, and finally a compromise optimization operation of thermal reliability and electromagnetic compatibility performance indicators is achieved.

[0061] In an exemplary embodiment of the present application, a method for dividing a current interval is provided, comprising:

[0062] The first current interval critical value, the second current interval critical value and the third current interval critical value are determined according to the rated current of the Si / SiC hybrid device.

[0063] A current interval in which the absolute value of the on-current is greater than or equal to 0 and less than or equal to the first current interval critical value is determined as the first current interval.

[0064] A current interval in which the absolute value of the on-current is greater than the first current interval critical value and less than or equal to the second current interval critical value is determined as the second current interval.

[0065] A current interval in which the absolute value of the on-current is greater than the second current interval critical value and less than or equal to the third current interval critical value is determined as the third current interval.

[0066] A current interval in which the absolute value of the on-current is greater than the third current interval critical value and less than or equal to the absolute value of the rated current of the Si / SiC hybrid device is determined as the fourth current interval.

[0067] The present application realizes the division of current intervals through the above process.

[0068] In an exemplary embodiment of the present application, a method for determining a first current interval critical value a, a second current interval critical value b, and a third current interval critical value c according to a rated current of a Si / SiC hybrid device is provided, specifically including:

[0069] The rated current of the first percentage of Si / SiC hybrid devices is determined as the first current interval critical value a; the rated current of the second percentage of Si / SiC hybrid devices is determined as the second current interval critical value b; the rated current of the third percentage of Si / SiC hybrid devices is determined as the third current interval critical value c. The first percentage is less than the second percentage; the second percentage is less than the third percentage.

[0070] In an exemplary embodiment of the present application, the first percentage is 20%, the second percentage is 60%, and the third percentage is 80%.

[0071] In an exemplary embodiment of the present application, a driving mode for driving a Si / SiC hybrid device according to a current interval in which a conduction current is located is provided, such as Figure 2 As shown, specifically including:

[0072] When the on-current is in the first current interval, the absolute value A of the on-current is greater than or equal to 0 and less than or equal to a, and only the Si IGBT device is driven. At this time, the loss of the Si IGBT device and the SiC MOSFET device is not much different, and only the Si IGBT device is driven, reducing the interference of the electromagnetic interference noise of the Si / SiC hybrid device.

[0073] When the on-current is in the second current interval, the absolute value A of the on-current is greater than a and less than or equal to b, and only the SiC MOSFET device is driven. By only driving the SiC MOSFET device, the switching loss of the Si / SiC hybrid device is reduced.

[0074] When the on-current is in the third current interval, the absolute value A of the on-current is greater than b and less than or equal to c, then the SiC MOSFET device is driven m times in one switching cycle, and the Si IGBT device is driven n times in one switching cycle. When m=0, n=1; when m>0, n=m.

[0075] In specific applications, the driving mode of the third current interval is the SiC MOSFET driving mode within a switching cycle. During the time when the SiC MOSFET device is driven to start first and then shut down, most of the conduction current is shared by starting the Si IGBT device. Figure 3 As shown, VG Si and VG SicRepresent the driving voltage amplitude of Si IGBT device and SiC MOSFET device respectively, t represents time, where Figure 3 (a) The SiC MOSFET is driven 0 times in one switching cycle. When the Si-MOSFET device is not driven, the Si IGBT device is driven to bear the conduction current, thereby improving the thermal reliability of the hybrid device without affecting the device loss. Figure 3 (b) and Figure 3 (c) SiC MOSFET is driven once in one switching cycle. When SiC MOSFET is driven once (duration is [L, I]), Si IGBT device is driven once (duration is [L1, I1]) during the time when SiC MOSFET device is driven once. The main purpose is to reduce the switching loss of hybrid device by driving SiC MOSFET device. Figure 3 (d) The SiC MOSFET is driven twice in one switching cycle (with durations of [G, K] and [P, Q] respectively). When the SiC MOSFET is driven twice, the Si IGBT device is only driven once (with duration of [R, S]). The main purpose is to further reduce the conduction loss of the Si / SiC hybrid device.

[0076] When the on-current is in the fourth current interval, the absolute value A of the on-current is greater than c and less than or equal to the rated current of the Si / SiC hybrid device, then the Si IGBT device is driven p times in one switching cycle, and the SiC MOSFET device is driven q times in one switching cycle. When p=0, q=1; when p>0, q=p.

[0077] In specific applications, the driving mode of the fourth current interval is the Si IGBT driving mode within a switching cycle. During the time when the Si IGBT device is driven to start first and then shut down, the Si IGBT device is used to reduce the impact of the pulse current on the SiC MOSFET device. Figure 4 As shown, VG Si and VG Sic Represent the driving voltage amplitude of Si IGBT device and SiC MOSFET device respectively, t represents time, where Figure 4 (a) The Si IGBT is driven 0 times in one switching cycle. When the Si IGBT device is not driven, the SiC MOSFET device is driven to reduce the device loss. Figure 4(b) The SiIGBT is driven once in one switching cycle. When the Si IGBT is driven once, the SiC MOSFET device is driven once (duration is [E, F]) within the time when the Si IGBT device is driven once. The main purpose is to drive the Si IGBT device to bear most of the on-current to reduce the impact of the pulse current on the SiC MOSFET device.

[0078] In an exemplary embodiment of the present application, when the on-current is in the third current interval, when m=1, the Si-IGBT device is driven once within the time of driving the SiC-MOSFET device once, and the driving time of the Si-IGBT device is less than or equal to the driving time of the SiC-MOSFET device, such as Figure 3 (b) and Figure 3 (c) Figure 3 As shown in (b), during the driving time L to I of the SiC MOSFET device, the driving time L1I1 of the Si IGBT device is shorter than the driving time LI of the SiC MOSFET device. Figure 3 As shown in (c), within the driving time M to N of the Si IGBT device, the driving time of the Si IGBT device is equal to the driving time MN of the SiC MOSFET device.

[0079] When m=2, the Si-IGBT device is driven once during each driving time of the SiC-MOSFET device, and the driving time of each driving of the Si-IGBT device is shorter than the driving time of the SiC-MOSFET device. Figure 3 (d). Figure 3 (d) It can be seen that within the driving time G to K and P to Q of the SiC MOSFET device, the driving time RK and PS of the Si IGBT device are respectively shorter than the driving time GK and PQ of the SiC MOSFET device.

[0080] In an exemplary embodiment of the present application, when the on-current is in the fourth current interval, when p=1, the SiC-MOSFET device is driven once within the time of driving the Si-IGBT device once, and the driving time of the SiC-MOSFET device is shorter than the driving time of the Si-IGBT device, such as Figure 4 (b). Figure 4 (b) It can be seen that within the driving time C to D of the Si IGBT device, the driving time EF of the SiC MOSFET device is shorter than the driving time CD of the Si IGBT device.

[0081] In an exemplary embodiment, the present application provides a driving control method for a Si / SiC hybrid device, comprising:

[0082] The on-current is detected. When the absolute value of the on-current is greater than or equal to 0 and less than or equal to a, only the SiIGBT device is driven.

[0083] The on-current is detected. When the absolute value of the on-current is greater than a and less than or equal to b, only the SiC MOSFET device is driven.

[0084] The size of the on-current is detected. When the absolute value of the on-current is greater than b and less than or equal to c, the SiC MOSFET driving mode within one switching cycle is adopted. The SiC MOSFET device is driven twice in each switching cycle and stops running for the rest of the time, while the Si IGBT device is driven once each time the SiC MOSFET device is driven.

[0085] The on-current is detected. When the absolute value of the on-current is greater than c and less than or equal to the rated current of the Si / SiC hybrid device, the Si IGBT driving mode within one switching cycle is adopted. The Si IGBT device is driven once in each switching cycle and stops running for the rest of the time, while the SiC MOSFET device is driven once within the driving time of the Si IGBT device.

[0086] The present application provides a driving control method for a Si / SiC hybrid device, which can meet the application requirements of high efficiency, low cost and high reliability of a high-power power supply.

[0087] In an exemplary embodiment, the present application provides a drive control system for a Si / SiC hybrid device, such as Figure 5 As shown, including:

[0088] The on-current acquisition module 200 is used to acquire the on-current of the Si / SiC hybrid device, wherein the Si / SiC hybrid device includes a Si IGBT device and a SiC MOSFET device.

[0089] The current interval determination module 201 is connected to the on-current acquisition module 200, and is used to determine the current interval where the on-current is located. The current interval is divided according to the rated current of the Si / SiC hybrid device. One current interval corresponds to one driving mode. The driving modes include driving only Si IGBT devices, driving only SiC MOSFET devices, and driving Si IGBT devices or SiC MOSFET devices for different times in one switching cycle;

[0090] The hybrid device driving module 202 is connected to the current interval determining module 201 and is used to drive the Si / SiC hybrid device according to the driving mode of the current interval where the on-current is located.

[0091] In an exemplary embodiment of the present application, the driving control system of the Si / SiC hybrid device further includes: a current interval division module, including:

[0092] The critical value determination unit is used to determine a first current interval critical value, a second current interval critical value and a third current interval critical value according to a rated current of the Si / SiC hybrid device.

[0093] The first dividing unit is used to determine a current interval in which the absolute value of the on-current is greater than or equal to 0 and less than or equal to a first current interval critical value as a first current interval.

[0094] The second dividing unit is used to determine a current interval in which the absolute value of the on-current is greater than the first current interval critical value and less than or equal to the second current interval critical value as the second current interval.

[0095] The third dividing unit is used to determine a current interval in which the absolute value of the on-current is greater than the second current interval critical value and less than or equal to the third current interval critical value as a third current interval.

[0096] The fourth dividing unit is used to determine a current interval in which the absolute value of the on-current is greater than the third current interval critical value and less than or equal to the absolute value of the rated current of the Si / SiC hybrid device as a fourth current interval.

[0097] In an exemplary embodiment of the present application, a hybrid device driving module includes:

[0098] The first driving unit is used to drive only the Si IGBT device when the conduction current is in the first current interval.

[0099] The second driving unit is used to drive only the SiC MOSFET device when the conduction current is in the second current interval.

[0100] The third driving unit is used to drive the SiC MOSFET device m times in one switching cycle and drive the Si IGBT device n times in one switching cycle when the on-current is in a third current interval; when m=0, n=1; when m>0, n=m.

[0101] The fourth driving unit is used to drive the Si IGBT device p times in one switching cycle and drive the SiC MOSFET device q times in one switching cycle when the on-current is in a fourth current interval; when p=0, q=1; when p>0, q=p.

[0102] The technical features of the above embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0103] This article uses specific examples to illustrate the principles and implementation methods of this application. The description of the above embodiments is only used to help understand the method and core ideas of this application. At the same time, for those skilled in the art, according to the ideas of this application, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as limiting this application.

Claims

1. A driving control method for a Si / SiC hybrid device, characterized in that: The driving control method of the Si / SiC hybrid device comprises: Obtaining an on-current of a Si / SiC hybrid device; the Si / SiC hybrid device includes a SiIGBT device and a SiC MOSFET device; Determine a current interval in which the on-current is located; the current interval is divided according to the rated current of the Si / SiC hybrid device; one current interval corresponds to a driving mode; the driving mode includes driving only the SiIGBT device, driving only the SiC MOSFET device, and driving the SiIGBT device or the SiC MOSFET device for different times in one switching cycle; The Si / SiC hybrid device is driven according to a driving mode in a current interval where the on-current is located.

2. The driving control method of the Si / SiC hybrid device according to claim 1, characterized in that: The method for dividing the current interval includes: Determine a first current interval critical value, a second current interval critical value, and a third current interval critical value according to the rated current of the Si / SiC hybrid device; Determine a current interval in which the absolute value of the on-current is greater than or equal to 0 and less than or equal to the first current interval critical value as a first current interval; Determine a current interval in which the absolute value of the conduction current is greater than the first current interval critical value and less than or equal to the second current interval critical value as a second current interval; Determine a current interval in which the absolute value of the conduction current is greater than the second current interval critical value and less than or equal to the third current interval critical value as a third current interval; A current interval in which the absolute value of the on-current is greater than the third current interval critical value and less than or equal to the absolute value of the rated current of the Si / SiC hybrid device is determined as a fourth current interval.

3. The driving control method of the Si / SiC hybrid device according to claim 2, characterized in that: Determining a first current interval critical value, a second current interval critical value, and a third current interval critical value according to the rated current of the Si / SiC hybrid device specifically includes: The rated current of the first percentage of the Si / SiC hybrid devices is determined as the critical value of the first current interval; the rated current of the second percentage of the Si / SiC hybrid devices is determined as the critical value of the second current interval; the rated current of the third percentage of the Si / SiC hybrid devices is determined as the critical value of the third current interval; the first percentage is less than the second percentage; the second percentage is less than the third percentage.

4. The driving control method of the Si / SiC hybrid device according to claim 3, characterized in that: The first percentage is 20%; the second percentage is 60%; and the third percentage is 80%.

5. The driving control method of the Si / SiC hybrid device according to claim 2, characterized in that: Driving the Si / SiC hybrid device according to the driving mode of the current interval where the on-current is located specifically includes: When the on-current is in the first current interval, only the Si IGBT device is driven; When the on-current is in the second current interval, only the SiC MOSFET device is driven; When the on-current is in the third current interval, the SiCMOSFET device is driven m times in one switching cycle, and the SiIGBT device is driven n times in one switching cycle; when m=0, n=1; when m>0, n=m; When the on-current is in the fourth current interval, the SiIGBT device is driven p times in one switching cycle, and the SiC MOSFET device is driven q times in one switching cycle; when p=0, q=1; when p>0, q=p.

6. The driving control method of the Si / SiC hybrid device according to claim 5, characterized in that: When m=1, the SiIGBT device is driven once within the time of driving the SiC MOSFET device once, and the driving time of the SiIGBT device is less than or equal to the driving time of the SiC MOSFET device; When m=2, the SiIGBT device is driven once within the time of each driving of the SiC MOSFET device; and the driving time of each driving of the SiIGBT device is shorter than the driving time of the SiC MOSFET device.

7. The driving control method of the Si / SiC hybrid device according to claim 5, characterized in that: When p=1, the SiC MOSFET device is driven once within the time of driving the Si IGBT device once; the driving time of the SiC MOSFET device is shorter than the driving time of the Si IGBT device.

8. A drive control system for a Si / SiC hybrid device, characterized in that: The driving control system of the Si / SiC hybrid device comprises: An on-current acquisition module, used to acquire the on-current of a Si / SiC hybrid device; the Si / SiC hybrid device includes a SiIGBT device and a SiC MOSFET device; A current interval determination module, used to determine the current interval in which the on-current is located; the current interval is divided according to the rated current of the Si / SiC hybrid device; one current interval corresponds to a driving mode; the driving mode includes driving only the Si IGBT device, driving only the SiC MOSFET device, and driving the SiIGBT device or the SiC MOSFET device for different times in one switching cycle; A hybrid device driving module is used to drive the Si / SiC hybrid device according to a driving mode of a current interval where the on-current is located.

9. The driving control system of the Si / SiC hybrid device according to claim 8, characterized in that: The driving control system of the Si / SiC hybrid device further includes: a current interval division module; The current interval division module comprises: A critical value determination unit, configured to determine a first current interval critical value, a second current interval critical value, and a third current interval critical value according to a rated current of the Si / SiC hybrid device; A first dividing unit, configured to determine a current interval in which an absolute value of an on-current is greater than or equal to 0 and less than or equal to a critical value of the first current interval as a first current interval; A second dividing unit, configured to determine a current interval in which the absolute value of the on-current is greater than the first current interval critical value and less than or equal to the second current interval critical value as a second current interval; A third dividing unit, configured to determine a current interval in which the absolute value of the on-current is greater than the second current interval critical value and less than or equal to the third current interval critical value as a third current interval; The fourth dividing unit is used to determine a current interval in which the absolute value of the on-current is greater than the third current interval critical value and less than or equal to the absolute value of the rated current of the Si / SiC hybrid device as a fourth current interval.

10. The driving control system of the Si / SiC hybrid device according to claim 9, characterized in that: The hybrid device driving module comprises: A first driving unit, configured to drive only the SiIGBT device when the on-current is in the first current interval; A second driving unit, configured to drive only the SiCMOSFET device when the on-current is in the second current interval; a third driving unit, configured to drive the SiC MOSFET device m times in one switching cycle and drive the Si IGBT device n times in one switching cycle when the on-current is in the third current interval; when m=0, n=1; when m>0, n=m; The fourth driving unit is used to drive the Si IGBT device p times in one switching cycle and drive the SiC MOSFET device q times in one switching cycle when the on-current is in the fourth current interval; when p=0, q=1; when p>0, q=p.

Images