High-side switch circuit, control method, and electronic device

Abstract

A high-side switch circuit, a control method, and an electronic device. The high-side switch circuit includes: an enable signal port, a control unit, and a power transistor, where: the enable signal port inputs an enable signal; the control unit is adapted to determine a target driving mode based on the enable signal; and control the on / off state of the power transistor based on the driving configuration parameters corresponding to the target driving mode; the driving configuration parameters include at least one of the following: conduction speed, current limiting protection threshold, temperature rise protection threshold; the enable signal is a first enable signal, and the target driving mode is an inductive / resistive load driving mode; the enable signal is a second enable signal, and the target driving mode is a capacitive load driving mode. The above solution selects corresponding driving modes for different types of loads to achieve the optimization of the driving strategy.

Description

Technical Field

[0001] The present invention relates to the technical field of electronic circuits, and in particular, to a high-side switch circuit, a control method, and an electronic device. Background Art

[0002] The high-side switch chip provides a path for voltage and current to an external load by controlling the conduction of an internal power transistor (MOSFET). The external loads of the high-side switch chip include inductive loads (such as relays, solenoid valves, etc.), resistive loads (such as heating wires, etc.), and capacitive loads (such as various automotive controllers, and the input ends of automotive controllers usually have relatively large capacitors).

[0003] In the prior art, a fixed driving mode is usually adopted to drive an external load, that is, the same driving mode is adopted to drive inductive loads, resistive loads, and capacitive loads. However, when driving a capacitive load using a fixed driving mode, a relatively large current overshoot is likely to occur, and it will cause the power transistor to heat up severely. Summary of the Invention

[0004] The purpose of the present invention is at least to provide a high-side switch circuit that can select a corresponding driving mode based on different types of loads to optimize the driving strategy.

[0005] In a first aspect, the present invention provides a high-side switch circuit, including: an enable signal port, a control unit, and a power transistor, wherein: the enable signal port inputs an enable signal; the control unit is adapted to determine a target driving mode based on the enable signal; and control the on / off state of the power transistor based on driving configuration parameters corresponding to the target driving mode; the driving configuration parameters include at least one of the following: conduction speed, current limiting protection threshold, temperature rise protection threshold; the enable signal is a first enable signal, and the target driving mode is an inductive / resistive load driving mode; the enable signal is a second enable signal, and the target driving mode is a capacitive load driving mode.

[0006] By inputting different enable signals to the enable signal port of the high-side switch circuit, the control unit determines a target driving mode associated with the enable signal, and then selects driving configuration parameters corresponding to the target driving mode to control the on / off state of the power transistor. Thus, it is possible to select a corresponding driving mode based on different types of loads to optimize the driving strategy.

[0007] Optionally, the high-side switch circuit further includes: a signal detection unit coupled to the enable signal port, adapted to output a load flag bit signal with a corresponding level based on the enable signal; the control unit is adapted to determine the target driving mode based on the level of the load flag bit signal and the enable signal.

[0008] Optionally, the signal detection unit is adapted to latch the load flag signal to a first level and output it to the control unit when N consecutive PWM square waves are detected; and, when no PWM square wave is detected or the number of consecutive PWM square waves detected is less than N, set the level of the load flag signal to a second level; the first level is different from the second level; N is a positive integer and N≥2.

[0009] Optionally, the first enable signal is a continuous high-level signal, and the second enable signal includes M consecutive PWM square waves and a continuous high-level signal; M is a positive integer and M≥N; the control unit is adapted to determine that the target drive mode is the capacitive load drive mode when the level of the load flag signal is the first level; and, when the level of the load flag signal is the second level, determine that the target drive mode is the inductive / resistive load drive mode.

[0010] Optionally, the first enable signal includes M consecutive PWM square waves and a continuous high-level signal, and the second enable signal is a continuous high-level signal; M is a positive integer and M≥N; the control unit is adapted to determine that the target drive mode is the inductive / resistive load drive mode when the level of the load flag signal is the first level; and, when the level of the load flag signal is the second level, determine that the target drive mode is the capacitive load drive mode.

[0011] Optionally, the signal detection unit is further adapted to adjust the level of the load flag signal to the second level after latching the load flag signal to the first level when a low-level signal is detected at the enable signal port and the duration of the low-level signal reaches a preset first duration.

[0012] The high-side switch circuit further includes a signal detection unit, which can latch the load flag signal when N consecutive PWM square waves are detected. After a fault such as a short circuit occurs in the high-side switch circuit, the control unit can determine the target drive mode and restart the power transistor based on the level of the load flag signal and the enable signal. Thus, the control unit can adaptively determine the target drive mode to restart the power transistor.

[0013] Optionally, the control unit is adapted to output a turn-off control signal to turn off the power transistor after a continuous low-level signal is input at the enable signal port.

[0014] Optionally, the control unit is further adapted to obtain the real-time voltage of the load capacitor when the target driving mode is the capacitive load driving mode; when it is detected that the real-time voltage of the load capacitor reaches a preset voltage value, adjust the second conduction speed to the first conduction speed, and adjust the second temperature rise protection threshold to the first temperature rise protection threshold; wherein, the second conduction speed is the conduction speed corresponding to the capacitive load driving mode, and the second temperature rise protection threshold is the temperature rise protection threshold corresponding to the capacitive load driving mode; the first conduction speed is the conduction speed corresponding to the inductive / resistive load driving mode, and the first temperature rise protection threshold is the temperature rise protection threshold corresponding to the inductive / resistive load driving mode; the first conduction speed is greater than the second conduction speed, and the first temperature rise protection threshold is greater than the second temperature rise protection threshold; the load capacitor is coupled to the output end of the high-side switch circuit.

[0015] In a second aspect, the present invention further provides a control method for a high-side switch circuit, including: obtaining an enable signal; determining a target driving mode based on the enable signal; controlling the on / off state of a power transistor in the high-side switch circuit based on driving configuration parameters corresponding to the target driving mode; the driving configuration parameters include at least one of the following: conduction speed, current limiting protection threshold, temperature rise protection threshold; the enable signal is a first enable signal, and the target driving mode is an inductive / resistive load driving mode; the enable signal is a second enable signal, and the target driving mode is a capacitive load driving mode.

[0016] In a third aspect, the present invention further provides an electronic device, including the high-side switch circuit provided in any of the above embodiments. Description of the Drawings

[0017] Figure 1 is a schematic structural diagram of a high-side switch circuit in an embodiment of the present invention;

[0018] Figure 2 is a schematic working waveform diagram of a high-side switch circuit in an embodiment of the present invention;

[0019] Figure 3 is another schematic working waveform diagram of a high-side switch circuit in an embodiment of the present invention;

[0020] Figure 4 is still another schematic working waveform diagram of a high-side switch circuit in an embodiment of the present invention;

[0021] Figure 5 is yet another schematic working waveform diagram of a high-side switch circuit in an embodiment of the present invention;

[0022] Figure 6 is a flowchart of a control method for a high-side switch circuit in an embodiment of the present invention. Detailed implementation manners

[0023] In the prior art, a fixed driving mode is usually adopted to drive an external load, that is, the same driving mode is used to drive inductive loads, resistive loads, and capacitive loads. When driving a capacitive load using a fixed driving mode, a large current overshoot is likely to occur, causing a large impact on the wire harness. During the charging process of the capacitive load, the voltage and current across the power transistor are relatively high, which will cause the power transistor to overheat severely and affect the service life of the high-side switch chip.

[0024] In the embodiments of the present invention, by inputting different enable signals to the enable signal port of the high-side switch circuit, the control unit determines the target driving mode associated with the enable signal, and then selects the driving configuration parameters corresponding to the target driving mode to control the on / off state of the power transistor. Thus, corresponding driving modes can be selected based on different types of loads to optimize the driving strategy.

[0025] To make the above objects, features, and beneficial effects of the present invention more obvious and understandable, the following detailed description of the specific embodiments of the present invention will be given with reference to the accompanying drawings.

[0026] The embodiments of the present invention provide a high-side switch circuit 10, including: an enable signal port, a control unit, and a power transistor, where:

[0027] The enable signal port EN can input an enable signal;

[0028] The control unit can determine the target driving mode based on the enable signal input by the enable signal port EN; and control the on / off state of the power transistor based on the driving configuration parameters corresponding to the target driving mode; the driving configuration parameters may include at least one of the following: conduction speed, current limiting protection threshold, and temperature rise protection threshold. The conduction speed is the time required for the power transistor to switch from the off state to the on state.

[0029] In specific implementation, an external control device can be used to input an enable signal to the enable signal port EN.

[0030] In the embodiments of the present invention, the enable signal can be a first enable signal or a second enable signal, and the first enable signal is different from the second enable signal. The target driving mode may include an inductive / resistive load driving mode and a capacitive load driving mode.

[0031] In specific implementation, when the enable signal is the first enable signal, the target driving mode is the inductive / resistive load driving mode; when the enable signal is the second enable signal, the target driving mode is the capacitive load driving mode.

[0032] Alternatively, when the enable signal is the first enable signal, the target driving mode is the capacitive load driving mode; when the enable signal is the second enable signal, the target driving mode is the inductive / resistive load driving mode.

[0033] In a specific implementation, the driving configuration parameters corresponding to the inductive / resistive load driving mode (hereinafter referred to as the first driving configuration parameters) are different from the driving configuration parameters corresponding to the capacitive load driving mode (hereinafter referred to as the second driving configuration parameters).

[0034] The first driving configuration parameters may include a first turn-on speed, a first temperature rise protection threshold, and a first current limiting protection threshold. Correspondingly, the second driving configuration parameters may include a second turn-on speed, a second temperature rise protection threshold, and a second current limiting protection threshold.

[0035] The first turn-on speed may be higher than the second turn-on speed, the first temperature rise protection threshold may be greater than the second temperature rise protection threshold, and the first current limiting protection threshold may be greater than the second current limiting protection threshold.

[0036] In a specific implementation, the first enable signal may be a continuous high-level signal, and the second enable signal may include two parts. The first part is M consecutive pulse width modulation (PWM) square waves, and the second part is a continuous high-level signal. Moreover, in terms of timing, the first part is before the second part.

[0037] Alternatively, the first enable signal includes two parts. The first part is M consecutive PWM square waves, and the second part is a continuous high-level signal. And in terms of timing, the first part is before the second part; the second enable signal is a continuous high-level signal; M is a positive integer and M≥2.

[0038] The value of M can be set according to specific application scenarios. For example, set M = 10. Another example is to set M = 20.

[0039] Taking the first enable signal as a continuous high-level signal and the second enable signal as M consecutive PWM square waves as an example. When the control unit detects that the input enable signal is a continuous high-level signal, it can determine that the target driving mode is the inductive / resistive load driving mode, obtain the first driving configuration parameters, and control the on / off state of the power transistor based on the first driving configuration parameters; when the control unit detects that the input enable signal is N consecutive PWM square waves, it can determine that the target driving mode is the capacitive load driving mode, obtain the second driving configuration parameters, and control the on / off state of the power transistor based on the second driving configuration parameters. N is a positive integer and M≥N≥2.

[0040] In a specific implementation, the output terminal of the control unit can be coupled to the control terminal of the power transistor. The control unit can generate a first control signal based on the obtained first drive configuration parameter to control the power transistor; the control unit can generate a second control signal based on the obtained second drive configuration parameter to control the power transistor.

[0041] In a specific implementation, the control unit can be a chip or circuit structure with specific data processing functions such as a central processing unit (CPU) or a microcontroller unit (MCU). An internal storage module can be provided inside the control unit for storing the first drive configuration parameter and the second drive configuration parameter. The control unit can directly obtain the first drive configuration parameter or the second drive configuration parameter from the internal storage module based on an enable signal.

[0042] Alternatively, a memory can be provided in the high-side switch circuit. The memory is coupled to the control unit, and the first drive configuration parameter and the second drive configuration parameter are stored in the memory. The control unit can obtain the first drive configuration parameter or the second drive configuration parameter from the memory based on an enable signal.

[0043] In an embodiment of the present invention, the high-side switch circuit may further include: a signal detection unit, coupled to the enable signal port EN, adapted to output a load flag bit signal of a corresponding level based on the enable signal. A control unit, further adapted to determine a target drive mode based on the level of the load flag bit signal.

[0044] In a specific implementation, the input terminal of the signal detection unit can be coupled to the enable signal port, and the output terminal of the signal detection unit can be coupled to the control unit. The signal detection unit can detect the enable signal input to the enable signal port.

[0045] After the signal detection unit detects that an enable signal (the first enable signal or the second enable signal) is input to the enable signal port, it can detect the number of received PWM square waves. If N consecutive PWM square waves are detected, the signal detection unit can output a load flag bit signal of a first level and latch the level of the load flag bit signal as the first level; if no PWM square wave is detected, or if N consecutive PWM square waves are not detected, a load flag bit signal of a second level is output. The above-mentioned first level is different from the second level.

[0046] After the signal detection unit latches the load flag bit signal to the first level, if the input signal of the enable signal port is detected as a low-level signal (i.e., the enable signal port stops inputting the enable signal), and the duration of the low-level signal reaches a preset first duration, the level of the load flag bit signal can be switched from the first level to the second level. After the signal detection unit latches the load flag bit signal to the first level, if the input signal of the enable signal port is detected as a low-level signal, but the duration of the low-level signal does not reach the first duration, the level of the load flag bit signal can remain at the first level.

[0047] In some embodiments, the first level is a high level and the second level is a low level. The above-mentioned first duration can be set according to specific application scenarios, such as set to 1 second (s), or set to 5 s, etc.

[0048] Taking the first level as a high level and the second level as a low level as an example:

[0049] If the signal detection unit detects that the input of the enable signal port is a continuous high-level signal, the level of the load flag bit signal output by the signal detection unit is a low level; correspondingly, the control unit selects the first drive configuration parameter to control the on-off state of the power transistor.

[0050] If the signal detection unit detects that the enable signal port inputs a PWM square wave and detects N consecutive PWM square waves, the level of the output load flag bit signal is a high level, and the high level of the load flag bit signal is latched; correspondingly, the control unit selects the second drive configuration parameter to control the on-off state of the power transistor. If the input signal of the enable signal port jumps to a continuous low-level signal and the duration of the low-level signal reaches the first duration, the signal detection unit will switch the level of the output load flag bit signal from a high level to a low level. When the level of the load flag bit signal is a low level, the control unit selects the first drive configuration parameter to control the on-off state of the power transistor.

[0051] That is to say, when the signal detection unit detects that the input of the enable signal port is a PWM square wave and the number of detected PWM square waves does not reach N, the level of the output load flag bit signal is a low level. When N consecutive PWM square waves are detected, the level of the output load flag bit signal jumps from a low level to a high level.

[0052] In summary, in the embodiment of the present invention, when the enable signal port inputs a continuous low-level signal, the high-side switch circuit can control the power transistor to be in an off state. When the enable signal port inputs an enable signal, the high-side switch circuit can select the first drive configuration parameter or the second drive configuration parameter based on whether the enable signal is the first enable signal or the second enable signal to control the on-off state of the power transistor.

[0053] In an embodiment of the present invention, when the target driving mode is a capacitive load driving mode, the control unit can acquire the real-time voltage of the load capacitor. When it is detected that the real-time voltage of the load capacitor reaches a preset voltage value, the control can be performed to adjust the conduction speed of the power transistor from the second conduction speed to the first conduction speed, and to adjust the second temperature rise protection threshold to the first temperature rise protection threshold.

[0054] In some embodiments, the difference between the drain voltage and the source voltage of the power transistor can be acquired to determine whether the real-time voltage of the load capacitor reaches the preset voltage value. When it is detected that the difference between the drain voltage and the source voltage of the power transistor is less than a preset threshold, it can be determined that the real-time voltage of the load capacitor reaches the preset voltage value.

[0055] The preset threshold can be set based on a specific application scenario. For example, the preset threshold is 2V.

[0056] In a specific implementation, the first conduction speed is the conduction speed corresponding to the inductive / resistive load driving mode, the second conduction speed is the conduction speed corresponding to the capacitive load driving mode, and the first conduction speed is greater than the second conduction speed; the first temperature rise protection threshold is the temperature rise protection threshold corresponding to the inductive / resistive load driving mode, the second temperature rise protection threshold is the temperature rise protection threshold corresponding to the capacitive load driving mode, and the first temperature rise protection threshold is greater than the second temperature rise protection threshold.

[0057] The working process of the above high-side switch circuit will be described below by taking the first enable signal as a continuous high-level signal and the second enable signal including M continuous PWM square waves and a continuous high-level signal as an example.

[0058] The first enable signal is input to the enable signal port. The signal detection unit detects the first enable signal and outputs a load flag bit signal with a low level. The control unit determines that the target driving mode is the inductive / resistive load driving mode based on the first enable signal and the load flag bit signal, and selects the first driving configuration parameter to control the on / off state of the power transistor.

[0059] When a continuous low-level signal is input to the enable signal port, the control unit can control the conduction state of the power transistor to switch to the off state.

[0060] Refer to Figure 2 , a schematic diagram of the working waveform of a high-side switch circuit is given. Figure 2 In, the enable signal is the first enable signal.

[0061] Figure 2 In, the first enable signal is input to the enable signal port EN. The level of the load flag bit signal output by the signal detection unit is low. The control unit controls the power transistor to turn on in the inductive / resistive load driving mode, and the conduction speed of the power transistor is relatively fast, and the output voltage V OUTand the output current I OUT has a relatively fast rising speed. The temperature rise protection threshold T SW is selected to be a higher T SW(H) , where T J is the junction temperature, T SD is the current limiting protection threshold, and T MOS is the temperature of the power transistor, and T REF is the reference temperature.

[0062] The enable signal port inputs a second enable signal. The signal detection unit detects the second enable signal. When the number of PWM square waves detected by the signal detection unit is less than N, the level of the load flag bit signal output by the signal detection unit is low. The control unit controls the power transistor to be in the off state.

[0063] When the number of PWM square waves detected by the signal detection unit is equal to N, the level of the load flag bit signal output jumps from low to high. The signal detection unit latches the level of the load flag bit signal. The control unit detects the second enable signal and, after detecting the high-level load flag bit signal, determines that the target drive mode is the capacitive load drive mode. The control unit controls the on / off state of the power transistor based on the second drive configuration parameters.

[0064] Referring to Figure 3 , a schematic diagram of the working waveform of another high-side switch circuit is given. Figure 3 In , the enable signal is the second enable signal.

[0065] In the capacitive load drive mode, the conduction speed of the power transistor is slow, and the rising speeds of the output voltage V OUT and the output current I OUT are slow. The temperature rise protection threshold T SW is selected to be a lower T SW(L) . When the power transistor is turned on and triggers the temperature rise protection threshold, the control unit controls the power transistor to switch to the off state; when the temperature of the power transistor drops, the control unit can control the power transistor to conduct again. Thus, it loops continuously until the output capacitor voltage reaches the input voltage VS.

[0066] In a specific implementation, to improve the load-carrying capacity after the output capacitor is charged, after the output capacitor is charged to a certain value, the second conduction speed is changed to the first conduction speed, and the second temperature rise protection threshold is changed to the first protection threshold. As Figure 3 shown, when the output capacitor voltage reaches VS - VDS, the second conduction speed is changed to the first conduction speed, and the second temperature rise protection threshold T SW(L) is changed to the first protection threshold T SW(H) .

[0067] In a specific implementation, when the enable signal is the first enable signal, after the high-side switch circuit has a ground short circuit fault, the power transistor triggers current limiting protection and is turned off. After waiting for a period of time, the control unit can control the power transistor to attempt to restart. Since the level of the load flag bit signal is low and the enable signal is a continuous high-level signal, the control unit can determine that the target drive mode is the inductive / resistive load drive mode, and then control the on / off state of the power transistor using the first drive configuration parameters.

[0068] Referring to Figure 4 , a schematic diagram of the operating waveform of another high-side switch circuit is given. Figure 4 In

[0069] Figure 4 In

[0070] In a specific implementation, when the enable signal is the second enable signal, after the high-side switch circuit has a ground short circuit fault, the power transistor triggers current limiting protection and is turned off. After waiting for a period of time, the control unit can control the power transistor to attempt to restart. Since the level of the load flag bit signal is high, the control unit can determine that the target drive mode is the capacitive load drive mode, and then control the on / off state of the power transistor using the second drive configuration parameters.

[0071] Referring to Figure 5 , a schematic diagram of the operating waveform of another high-side switch circuit is given. Figure 5 In

[0072] Figure 5 In RST (the first duration), the level of the load flag bit signal jumps to low.

[0073] In summary, by inputting different enable signals to the enable signal port of the high-side switch circuit, the control unit determines the target drive mode associated with the enable signal, and then selects the drive configuration parameters corresponding to the target drive mode to control the on-off state of the power transistor. Thus, corresponding drive modes can be selected based on different types of loads to optimize the drive strategy.

[0074] Moreover, the high-side switch circuit further includes a signal detection unit. When the signal detection unit detects N consecutive PWM square waves, it can latch the load flag signal. After a fault such as a short circuit occurs in the high-side switch circuit, the control unit can determine the target drive mode and restart the power transistor based on the level of the load flag signal and the enable signal. Thus, the control unit can adaptively determine the target drive mode to restart the power transistor.

[0075] In an embodiment of the present invention, the high-side switch circuit may further include a temperature rise protection unit and a current limiting protection unit, where:

[0076] The temperature rise protection unit can be coupled to the control unit. When it detects that the real-time temperature of the power transistor is greater than a preset temperature rise protection threshold (the first temperature rise protection threshold, the second temperature rise protection threshold), it can output a temperature protection trigger signal to the control unit; upon receiving the temperature protection trigger signal, the control unit can control the power transistor to turn off;

[0077] The current limiting protection unit can be coupled to the control unit. When it detects that the current flowing through the power transistor exceeds a preset current limiting protection threshold (the first current limiting protection threshold, the second current limiting protection threshold), it can output a short circuit trigger signal to the control unit; upon receiving the short circuit trigger signal, the control unit can control the power transistor to turn off.

[0078] Referring to Figure 6 , a flowchart of a control method for a high-side switch circuit in an embodiment of the present invention is given. Figure 6 The control method shown in can be executed by the control unit provided in the above embodiment.

[0079] Step 601, obtain an enable signal.

[0080] Step 602, determine a target drive mode based on the enable signal.

[0081] Step 603, control the on-off state of the power transistor in the high-side switch circuit based on the drive configuration parameters corresponding to the target drive mode.

[0082] In a specific implementation, the specific execution processes of the above steps 601 to 603 can be correspondingly referred to the description of the control unit in the above embodiment, and will not be elaborated here.

[0083] Those of ordinary skill in the art can understand that all or part of the steps in the various methods of the above embodiments can be completed by a program instructing relevant hardware, and the program can be stored in a computer-readable storage medium, which can include: ROM, RAM, magnetic disk, optical disk, etc.

[0084] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be subject to the scope defined by the claims.

Claims

1. A high side switch circuit, characterized in that: include: Enable signal port, control unit, power tube, signal detection unit, where: The enable signal port inputs an enable signal; The signal detection unit is coupled to the enable signal port and is adapted to output a load flag signal of a corresponding level based on the enable signal, including: when N consecutive PWM square waves are detected, latching the load flag signal as a first level and outputting it to the control unit; and, when no PWM square wave is detected, or the number of consecutive PWM square waves detected is less than N, setting the level of the load flag signal to a second level; the first level is different from the second level; N is a positive integer and N≥2; and, further adapted to, after latching the load flag signal as the first level, detecting that the enable signal port inputs a low level signal, and after the duration of the low level signal reaches a preset first duration, adjusting the level of the load flag signal to the second level; The control unit is adapted to determine a target drive mode based on the level of the enable signal and the load flag signal; and control the on / off state of the power tube based on a drive configuration parameter corresponding to the target drive mode; the drive configuration parameter includes at least one of the following: a conduction speed, a current limiting protection threshold, and a temperature rise protection threshold; The enable signal is a first enable signal, and the target driving mode is an inductive / resistive load driving mode; the enable signal is a second enable signal, and the target driving mode is a capacitive load driving mode.

2. The high side switch circuit according to claim 1, characterized in that: The first enable signal is a continuous high level signal, and the second enable signal includes M continuous PWM square waves and a continuous high level signal; M is a positive integer and M≥N; The control unit is suitable for determining that the target drive mode is the capacitive load drive mode when the level of the load flag signal is the first level; and determining that the target drive mode is the inductive / resistive load drive mode when the level of the load flag signal is the second level.

3. The high side switch circuit according to claim 1, characterized in that: The first enable signal includes M continuous PWM square waves and a continuous high level signal, and the second enable signal is a continuous high level signal; M is a positive integer and M≥N; The control unit is adapted to determine that the target driving mode is the inductive / resistive load driving mode when the level of the load flag signal is the first level; And, when the level of the load flag signal is the second level, the target driving mode is determined to be the capacitive load driving mode.

4. The high side switch circuit according to claim 1, characterized in that: The control unit is adapted to input a low level signal at the enable signal port and output a shutdown control signal to shut down the power tube.

5. The high side switch circuit according to claim 1, characterized in that: The control unit is further adapted to obtain the real-time voltage of the load capacitor when the target driving mode is the capacitive load driving mode; when it is detected that the real-time voltage of the load capacitor reaches a preset voltage value, adjust the second conduction speed to the first conduction speed, and adjust the second temperature rise protection threshold to the first temperature rise protection threshold; Among them, the second conduction speed is the conduction speed corresponding to the capacitive load driving mode, and the second temperature rise protection threshold is the temperature rise protection threshold corresponding to the capacitive load driving mode; the first conduction speed is the conduction speed corresponding to the inductive / resistive load driving mode, and the first temperature rise protection threshold is the temperature rise protection threshold corresponding to the inductive / resistive load driving mode; the first conduction speed is greater than the second conduction speed, and the first temperature rise protection threshold is greater than the second temperature rise protection threshold; the load capacitor is coupled to the output end of the high-side switch circuit.

6. A control method for a high-side switch circuit, characterized in that: Suitable for controlling the high-side switch circuit according to any one of claims 1 to 5; the control method comprises: Get the enable signal and load flag signal; Determining a target driving mode based on the levels of the enable signal and the load flag signal; Based on the drive configuration parameters corresponding to the target drive mode, the on-off state of the power tube in the high-side switch circuit is controlled; the drive configuration parameters include at least one of the following: conduction speed, current limiting protection threshold, temperature rise protection threshold; the enable signal is a first enable signal, and the target drive mode is an inductive / resistive load drive mode; the enable signal is a second enable signal, and the target drive mode is a capacitive load drive mode.

7. An electronic device, characterized in that: It comprises the high side switch circuit as claimed in any one of claims 1 to 5.

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