Power converter, embedded integrated device unit, high-heat-dissipation high-frequency power module and manufacturing method of high-heat-dissipation high-frequency power module

Abstract

The invention discloses a high-heat-dissipation high-frequency power module and a manufacturing method thereof, the high-heat-dissipation high-frequency power module comprises an embedded circuit board, at least one high-frequency capacitor and an insulating heat conduction material, and power electrodes of at least two semiconductor power devices are connected in series to form at least one power conversion bridge arm; the ratio of the overlapping area of the power electrode wiring of the semiconductor power device led out from the surface of the embedded circuit board and the projection of the semiconductor power device to the area of the semiconductor power device is more than 60%; and the power conversion bridge arm is connected in parallel with the high-frequency capacitor nearby so as to realize low-loop inductance interconnection. According to the invention, high-frequency large-current characteristics can be realized, and single-side high heat dissipation capability and nearly ideal double-side high heat dissipation capability are realized. Due to the excellent loop processing, the inductance of a bridge arm loop formed by two semiconductor power devices per 10 square millimeters has an opportunity to be less than 2nH and even less than 1nH, the requirement of frequency MHz is met, and the current mainstream frequency is far higher than the current mainstream frequency lower than 100KHz.

Description

[0001] This application is a divisional application of a patent application with application number 2023105550384, application date May 16, 2023, and patent name "A power converter, embedded integrated device unit, high heat dissipation high frequency power module and its manufacturing method". Technical Field

[0002] The present invention belongs to the field of semiconductor technology, and in particular relates to a power converter, an embedded integrated device unit, a high heat dissipation high frequency power module and a manufacturing method thereof. Background Art

[0003] In the field of electric power conversion, the contribution to energy conservation and emission reduction comes from two aspects: high efficiency to reduce direct energy consumption, and high power density to reduce material use to reduce indirect energy consumption. High power density requires high frequency, but high frequency and high efficiency are often contradictory. Therefore, in order to achieve high efficiency at high frequency, it is necessary to significantly reduce the loop inductance, such as Figure 1A The bridge arm loop inductance Lloop in the circuit should decrease proportionally with the increase of frequency.

[0004] As a supplement, the semiconductor bridge arm is the basic unit and core of the power converter. Usually, at least two semiconductor power switches Q1 and Q2 are connected in series and then connected in parallel with a DC voltage. In order to reduce the loop inductance, a decoupling capacitor Cbus is connected in parallel with the bridge arm near the DC voltage. In this way, during the switching process, due to the sudden change of di / dt current, the voltage spike generated on Lloop is limited to ensure normal operation.

[0005] In high-power converters, the improvement of power density also depends on how to handle heat dissipation, especially the heat dissipation of semiconductor power devices. The more heat that can be handled, the higher the power can be, and the higher the power density. Therefore, the improvement of high heat dissipation capacity is the representative direction of technological advancement in this field. Figure 1B and Figure 1C , which is a typical representative of the double-sided heat dissipation in the prior art. It should be noted here that the technical features disclosed in the present invention are all illustrated by double-sided heat dissipation embodiments, but the technical features disclosed in the present invention can be applied to single-sided heat dissipation embodiments; and double-sided heat dissipation is usually used in applications with extremely high requirements for heat dissipation density, so liquid cooling heat dissipation devices are often used.

[0006] The prior art welds the copper frame of the pins on an insulating heat-conducting layer (usually a ceramic substrate, hereinafter referred to as DBC), then welds the semiconductor power device (such as MOSFET, IGBT, SiC, GaN) on the copper frame, and then leads the electrode to the pin through the bonding wire. In order to leave enough space for the height of the bonding wire, a thermally conductive pad (usually a copper alloy) is welded on the power electrode on the upper surface of the semiconductor power device, and then an insulating heat-conducting layer is welded to the upper surface of the thermally conductive pad. Finally, the fins of the liquid-cooled heat dissipation component are welded and bonded on the upper and lower surfaces of the above-mentioned assembly, so that a good double-sided heat dissipation effect is achieved.

[0007] However, due to the involvement of the thermal pad and the poor accuracy of the copper frame wiring, the bridge arm loop is relatively large and is usually difficult to be less than 10nH. The extreme ones are usually above 5nH, which limits the increase in current and frequency.

[0008] Since the thermal pad is placed above the semiconductor power device through a welding process, in order to ensure tolerance, the area of ​​the thermal pad is usually significantly smaller than the area of ​​the semiconductor power device. Since the pad is relatively thick, usually at least 1 mm, the thermal resistance of the pad cannot be ignored, which limits the decrease in the thermal resistance of the semiconductor power device to dissipate heat upwards. Therefore, a more ideal high heat dissipation effect cannot be achieved.

[0009] In summary, the existing high heat dissipation technology is insufficient in both high frequency performance and thermal resistance. Therefore, how to achieve high frequency and high current characteristics and nearly ideal high heat dissipation capacity at the same time is an urgent problem to be solved. Summary of the invention

[0010] In view of this, an object of the present invention is to provide a high heat dissipation high frequency power module and a manufacturing method thereof, which can achieve high frequency and large current characteristics and nearly ideal high heat dissipation capability.

[0011] In one aspect, the present invention provides a high heat dissipation high frequency power module, comprising: an embedded circuit board, at least two semiconductor power devices, at least one high frequency capacitor and an insulating heat conductive carrier; The embedded circuit board includes an upper surface and a lower surface facing each other, an inner layer, at least one electrical connection path and at least one high-density high-thermal-conductivity electrical connection path; the upper surface or the lower surface includes at least one wiring layer; The at least two semiconductor power devices are arranged horizontally and placed in the embedded circuit board, each of the semiconductor power devices includes a power electrode, the power electrodes of the at least two semiconductor devices are electrically connected to the wiring layer through the electrical connection path, and the power electrodes of the at least two semiconductor devices are electrically connected (through the wiring layer) to form at least one power conversion bridge arm; The semiconductor power device comprises two opposite device surfaces, at least one of the device surfaces is connected to the wiring layer through the high-density high-thermal-conductivity conductive path, and the wiring layer connected to the high-density high-thermal-conductivity conductive path can be used as a heat dissipation surface; The high-frequency capacitor is disposed adjacent to the power conversion bridge arm and is electrically connected in parallel with the power conversion bridge arm to achieve low-loop electrical interconnection; The insulating heat-conducting carrier plate comprises a heat-conducting upper surface and a heat-conducting lower surface opposite to each other, and the heat-conducting lower surface is arranged in contact with the heat dissipation surface.

[0012] Preferably, it also includes a packaging body, which at least partially covers the embedded circuit board and the insulating heat-conductive carrier, at least one end of the embedded circuit board directly or indirectly electrically extends beyond the projection of the insulating heat-conductive carrier on the embedded circuit board, and the heat-conductive upper surface of the insulating heat-conductive carrier is exposed.

[0013] Preferably, it further comprises a heat dissipation component, which is attached to the surface of the insulating heat-conducting carrier plate. The heat dissipation component is a heat exchange fin, which is integrally formed with the insulating heat-conducting carrier plate.

[0014] Preferably, the electrical connection path includes a metal via path.

[0015] Preferably, the electrical connection path further includes an inner redistribution layer.

[0016] Preferably, the electrical connection path comprises a bonding layer, the bonding layer bonds a surface of the semiconductor power device to a wiring layer, and the bonding layer is a conductive material or an insulating material.

[0017] Preferably, the connection direction of at least two of the semiconductor power devices is a first direction, and in the same horizontal plane, a direction perpendicular to the first direction is a second direction; The high frequency capacitor is arranged in the second direction.

[0018] Preferably, the embedded circuit board further comprises an interconnecting metal layer, which is arranged in the embedded circuit and at the same height as the semiconductor power device, and at least two of the semiconductor power devices are connected in series through the interconnecting metal layer; On the vertical cross section of the interconnect metal layer, projections of the wiring layer connected to the two electrodes of the high-frequency capacitor overlap.

[0019] Preferably, the high-frequency capacitor is arranged on the upper surface or the lower surface of the embedded circuit board and is located between two semiconductor power devices of a power conversion bridge arm; The insulating heat-conducting carrier plate and / or the heat dissipation component is provided with a space avoidance structure for accommodating high-frequency capacitors.

[0020] Preferably, an opening structure is provided on the embedded circuit board, the opening structure is located between two semiconductor power devices of one of the power conversion bridge arms, and the high-frequency capacitor is arranged at the opening structure.

[0021] Preferably, the high-frequency capacitor is embedded in an embedded circuit board, and the high-frequency capacitor is located between two semiconductor power devices of one of the power conversion bridge arms.

[0022] Preferably, the packaging body is formed by encapsulation with potting glue.

[0023] Preferably, the heat dissipation component comprises an upper heat dissipation component and a lower heat dissipation component, and the upper heat dissipation component and the lower heat dissipation component are respectively located at the upper and lower sides of the embedded circuit board; The upper heat dissipation component and the lower heat dissipation component are sealed and connected at one side of the embedded circuit board to form a cavity structure, and the cavity structure is filled with liquid potting glue.

[0024] Preferably, the embedded circuit board extends out of the cavity structure in at least two directions.

[0025] Preferably, the high heat dissipation and high frequency power module further comprises a liquid cooling cover plate and a sealing member, which are arranged outside the heat dissipation component, and the sealing member is arranged at the connection between the liquid cooling cover plate and the heat dissipation component.

[0026] Preferably, the high heat dissipation high frequency power module also includes a shell, one end of the shell is open, the other end of the shell is closed, the middle part of the shell is provided with an opening for accommodating the heat dissipation component, the shell is sealed and connected to the heat dissipation component to form a cavity structure, and the cavity structure is filled with liquid potting glue.

[0027] Preferably, the high heat dissipation high frequency power module further comprises a thin-wall structure, wherein the thin-wall structure is arranged between the housing and the heat dissipation component, and the thin-wall structure is used to compensate for assembly tolerance.

[0028] Preferably, the high heat dissipation high frequency power module also includes a sealing baffle, which is arranged on both sides of the heat dissipation component, and a glue injection opening is opened on one of the sealing baffles. The sealing baffle is sealed and connected to the heat dissipation component to form a cavity structure, and the cavity structure is filled with liquid potting glue.

[0029] Preferably, the sealing baffle is a special-shaped baffle to envelop and form a larger cavity structure.

[0030] Preferably, the packaging body is formed by packaging with a plastic packaging material.

[0031] Preferably, the gap between the insulating heat-conducting carrier plate and the wiring layer is pre-filled with dot glue, and the side wall of the insulating heat-conducting carrier plate has a step-like structure.

[0032] Preferably, the semiconductor power device is a vertical switching device, and the device surface corresponding to the upper heat dissipation surface or the lower heat dissipation surface is the drain electrode of the MOSFET or the collector electrode of the IGBT.

[0033] Preferably, the semiconductor power device is a planar switching device, and the surface of the semiconductor power device corresponding to the upper heat dissipation surface or the lower heat dissipation surface is the substrate of the semiconductor power device.

[0034] Preferably, the insulating heat-conducting carrier plate is a high thermal conductivity insulating film, and the thermal conductivity of the high thermal conductivity insulating film is >5 W / mK.

[0035] Preferably, it further includes a system mainboard, and the embedded circuit board is electrically connected to the system mainboard.

[0036] Preferably, the embedded circuit board is soldered on the system mainboard.

[0037] Preferably, the embedded circuit board is implanted in the system mainboard.

[0038] Preferably, one side of the embedded circuit board is flush with one side of the system mainboard, and the embedded circuit board and the system mainboard are electrically connected via a through-hole electrical connection structure and / or a surface wiring layer.

[0039] Preferably, the surface of the embedded circuit board is located inside the system mainboard, and the embedded circuit board is electrically connected to the system mainboard via a through-hole electrical connection structure.

[0040] Preferably, the high-frequency capacitor is arranged on the system mainboard, and the high-frequency capacitor is close to the embedded circuit board.

[0041] Preferably, it also includes a heat dissipation component, which is fitted on the heat-conducting upper surface of the insulating heat-conducting carrier plate. Sealing baffles are also provided on both sides of the heat dissipation component, and the sealing baffles are sealed and connected to the heat dissipation component to form a cavity structure, and the cavity structure is filled with liquid potting glue.

[0042] Preferably, the sealing baffle is a special-shaped baffle to envelop and form a larger cavity structure.

[0043] Preferably, a liquid cooling cover plate is provided outside the heat dissipation component, and a sealing member is provided at the connection between the liquid cooling cover plate and the heat dissipation component.

[0044] Preferably, the liquid cooling cover plate extends beyond the side of the heat dissipation component to form a liquid flow channel, and a magnetic element is disposed on the inner side of the liquid flow channel; The outer side of the liquid flow channel is provided with a sealing baffle to seal the magnetic element inside.

[0045] Preferably, the sealing baffle between the liquid flow channel and the heat dissipation component is removed, so that the liquid flow channel, the heat dissipation component and the sealing baffle form a cavity structure.

[0046] Preferably, one or more of a driving element, a low-frequency large-volume element, a control unit, and a magnetic element are arranged on the system mainboard in the cavity structure.

[0047] Preferably, within the same cavity structure, a plurality of embedded circuit boards are arranged on the system main board, and one or more of a driving element, a low-frequency large-volume element, a control unit, and a magnetic element are arranged on the system main board near each of the embedded circuit boards to form a circuit unit; and a plurality of the circuit units are integrated on a customer main board.

[0048] Preferably, the sealing baffle and the heat dissipation component are integrally formed.

[0049] Preferably, a vertical through-hole is provided on the embedded circuit board 1, and the high-frequency capacitor is arranged in the through-hole.

[0050] Preferably, two ends of the high-frequency capacitor are provided with horizontally extended capacitor terminals.

[0051] Preferably, the high heat dissipation high frequency power module is a double-sided heat dissipation high frequency power module, and the two device surfaces of each semiconductor power device are respectively connected on the upper surface or the lower surface of the embedded circuit board through a high-density and high-thermal-conductivity electrical connection path to form a wiring layer, and the wiring layer can be a heat dissipation layer, and the heat dissipation layer provides heat dissipation for the device; The two insulating heat-conducting carrier plates are respectively attached to the heat dissipation layer on the upper surface and the heat dissipation layer on the lower surface of the embedded circuit board.

[0052] Another aspect of the present invention provides a method for manufacturing a double-sided heat dissipation high-frequency high-power module, comprising the following steps: S1: providing a temporary protective layer on a surface of the embedded circuit board 1; S2: placing the embedded circuit board 1 in the system mainboard, wherein the surface of the embedded circuit board 1 not provided with the temporary protective layer is flush with a surface of the system mainboard; S3: Complete the setting of through-hole electrical connection structure and surface wiring layer; S4: cutting and removing the periphery of the embedded circuit board 1 that needs to be exposed, exposing the temporary protective layer; S5: Remove the temporary protective layer.

[0053] Another aspect of the present invention provides a method for manufacturing a double-sided heat dissipation high-frequency high-power module, comprising the following steps: S1: providing temporary protective layers on the upper and lower surfaces of the embedded circuit board 1 respectively; S2: Setting the embedded circuit board 1 in the system mainboard; S3: completing the setting of the through-hole electrical connection structure; S4: cutting and removing the periphery of the embedded circuit board 1 that needs to be exposed, exposing the temporary protective layer; S5: Remove the temporary protective layer.

[0054] Preferably, before step S2, the method further includes: performing window processing in the system mainboard to accommodate the embedded circuit board.

[0055] Another aspect of the present invention provides an embedded integrated device unit for a high heat dissipation high frequency power module, comprising an embedded circuit board, at least two semiconductor power devices, at least one high frequency capacitor and an insulating heat conductive carrier; The embedded circuit board includes opposing upper and lower surfaces, an inner layer, at least one electrical connection path and at least one high-density high-thermal-conductivity electrical connection path, and the upper surface or the lower surface includes at least one wiring layer; The at least two semiconductor power devices are arranged horizontally on the inner layer of the embedded circuit board, each of the semiconductor power devices includes a power electrode, the power electrodes of the at least two semiconductor power devices are electrically connected to the wiring layer through the electrical connection path, and the power electrodes of the at least two semiconductor power devices are connected in series (through the wiring layer) to form at least one power conversion bridge arm; The semiconductor power device comprises two opposite device surfaces, at least one of the device surfaces is connected to the wiring layer via the high-density high-thermal-conductivity conductive path, the wiring layer connected to the high-density high-thermal-conductivity conductive path can be used as a heat dissipation surface and is bonded to the insulating heat-conducting carrier; The embedded circuit board includes at least two DC power electrodes, and the two ends of the high-frequency capacitor are electrically connected to the two DC power electrodes respectively, so that the power conversion bridge arm is connected in parallel with the high-frequency capacitor to achieve low-loop electrical interconnection.

[0056] Preferably, the embedded integrated device unit includes an upper heat dissipation surface and a lower heat dissipation surface relative to each other, and the device surface of each semiconductor power device is electrically connected to the wiring layers on the upper surface and the lower surface of the embedded circuit board through a high-density and high-thermal conductivity electrical connection path, and the wiring layers are the upper heat dissipation surface and the lower heat dissipation surface of the semiconductor power device. The at least two insulating heat-conductive carriers are respectively attached to the upper heat dissipation surface and the lower heat dissipation surface to achieve double-sided heat dissipation.

[0057] Preferably, the semiconductor power device is a vertical switching device, and the device surface corresponding to the upper heat dissipation surface or the lower heat dissipation surface is the drain electrode of the MOSFET or the collector electrode of the IGBT.

[0058] Preferably, the semiconductor power device is a planar switching device, and the surface of the semiconductor power device corresponding to the upper heat dissipation surface or the lower heat dissipation surface is the substrate of the semiconductor power device.

[0059] Another aspect of the present invention provides a double-sided heat dissipation power converter, comprising: a double-sided heat dissipation package integrated device unit, at least two insulating heat-conducting substrates, at least one large-area multilayer circuit board, at least one high-frequency capacitor, at least one magnetic component, at least one driving element and two heat dissipation components; The double-sided heat dissipation package integrated device unit includes at least two semiconductor power devices, an opposite device unit upper surface and a device unit lower surface, and at least two low thermal resistance channels, each of the semiconductor power devices includes a power electrode and two opposite device surfaces, the power electrodes of each semiconductor power device are connected in series to form a bridge arm, and the two device surfaces of each semiconductor power device are connected to the device unit upper surface and the device unit lower surface through the corresponding low thermal resistance channel; The at least two insulating heat-conductive substrates are respectively arranged on the upper surface of the device unit and the lower surface of the device unit; The large-area multi-layer circuit board comprises at least one opening, and the opening is used to install the double-sided heat dissipation package integrated device unit; The at least one high-frequency capacitor is disposed adjacent to the bridge arm, the bridge arm comprises at least two DC electrodes and a bridge arm midpoint, and two ends of the high-frequency capacitor are respectively electrically connected to the at least two DC electrodes to form a low loop power channel; The at least one driving element is used to drive the semiconductor power device at high frequency; The at least one magnetic element is connected to the midpoint of the bridge arm, and the bridge arm and the magnetic element together realize a high-frequency energy conversion function; The two heat dissipation components are respectively arranged on the outer surfaces of the insulating heat-conducting substrate and the magnetic element.

[0060] Compared with the prior art, the present invention has the following beneficial effects: (1) Due to the excellent heat dissipation treatment, the present invention allows the optimal thermal resistance from the device to the wiring layer of each 10 square millimeters of semiconductor power devices to be less than 0.2 degrees / watt, the thermal resistance from the wiring layer to the outside of the insulating thermal conductive material is less than 0.8 degrees / watt, and the total thermal resistance of a single side is less than 1 degree / watt. The double-sided heat dissipation is less than 0.5 degrees / watt. Calculated at a temperature difference of 50 degrees Celsius, it allows each 10 square millimeter of semiconductor power devices to achieve a heat output of 100W, meeting the high power demand now and for a long time in the future; (2) Due to the excellent loop processing of the present invention, the inductance of the bridge arm loop composed of two semiconductor power devices per 10 square millimeters has the opportunity to be less than 2nH or even below 1nH, which is suitable for frequency MHZ requirements and is much higher than the current mainstream frequency of less than 100KHZ. BRIEF DESCRIPTION OF THE DRAWINGS

[0061] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0062] Figure 1A A circuit diagram of a semiconductor bridge arm in the prior art; Figure 1B and Figure 1C It is a schematic diagram of a high heat dissipation module in the prior art; Figure 2A This is a schematic diagram of the structure of a high heat dissipation and high frequency power module disclosed in an embodiment of the present invention; Figure 2B A schematic diagram of current flow when a high heat dissipation and high frequency power module disclosed in an embodiment of the present invention adopts a vertical device; Figure 3A A schematic diagram of a conductive material bonding layer of a high heat dissipation high frequency power module disclosed in an embodiment of the present invention; Figure 3B A schematic diagram of an inner redistribution layer of a high heat dissipation high frequency power module disclosed in an embodiment of the present invention; Figure 4A A schematic diagram of current flow when a planar device is used in a high heat dissipation and high frequency power module disclosed in an embodiment of the present invention; Figure 4B A schematic diagram of an insulating material bonding layer of a high heat dissipation high frequency power module disclosed in an embodiment of the present invention; Figure 5A and Figure 5B A schematic diagram of a high-frequency capacitor of a high-heat dissipation high-frequency power module disclosed in an embodiment of the present invention being arranged in a second direction; Figure 5C A schematic diagram of the interconnection metal layer of the high heat dissipation high frequency power module disclosed in an embodiment of the present invention; FIG. 6A to FIG. 6C A schematic diagram of different arrangement positions of high-frequency capacitors of a high-heat dissipation high-frequency power module disclosed in an embodiment of the present invention; FIG. 7A to FIG. 7D This is a schematic diagram of a package of a high heat dissipation and high frequency power module disclosed in an embodiment of the present invention using liquid potting glue; Fig. 8A and Figure 8B A schematic diagram of a sealing baffle of a high heat dissipation and high frequency power module disclosed in an embodiment of the present invention; Fig. 9A and Fig. 9B A schematic diagram of pre-filling gaps between wiring layers of an insulating heat-conducting carrier board of a high-heat dissipation high-frequency power module disclosed in an embodiment of the present invention with dot-shaped glue; Fig. 10A and Fig. 10B A schematic diagram of a high thermal conductivity insulating film of a high heat dissipation high frequency power module disclosed in an embodiment of the present invention; FIG. 11A to FIG. 11D A schematic diagram of a connection method between an embedded circuit board of a high heat dissipation and high frequency power module and a system mainboard disclosed in an embodiment of the present invention; FIG. 12A to FIG. 12D for Fig. 11B A flowchart of a method for manufacturing a connection method between an embedded circuit board and a system mainboard is shown; FIG. 13A to FIG. 13D for Fig. 11C A flowchart of a method for manufacturing a connection method between an embedded circuit board and a system mainboard is shown; FIG. 14A to FIG. 14D This is a schematic diagram of the application of an embedded circuit board and a system mainboard of a high heat dissipation and high frequency power module disclosed in an embodiment of the present invention; FIG. 15A to FIG. 15C This is a schematic diagram of the packaging body of the high heat dissipation and high frequency power module disclosed in an embodiment of the present invention being plastic-sealed.

[0063] Among them: 1 embedded circuit board; 2 high frequency capacitor; 3 insulating heat conductive substrate; 4 package body; 5 heat dissipation component; 6 semiconductor power device; 7 electrical connection path; 8 wiring layer; 9 bonding layer; 10 potting glue package; 11 seal; 12 liquid cooling cover; 13 shell; 14 sealing baffle; 15 glue injection opening; 16 dot-shaped insulating glue; 17 step-shaped structure; 18 high thermal conductivity insulating film; 19 system motherboard; 20 through-hole electrical connection structure; 21 magnetic component; 22 horizontal terminal; 23 temporary protective layer; 24 inner layer redistribution layer; 25 interconnect metal layer; 26 thin-wall structure; 27 protective glue; 28 liquid flow channel. DETAILED DESCRIPTION

[0064] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0065] FIG. 2A to FIG. 2B The schematic diagram of the structure of a high heat dissipation high frequency power module disclosed in an embodiment of the present invention is shown, comprising: An embedded circuit board 1, the embedded circuit board 1 comprises an upper surface and a lower surface relative to each other, and an inner layer, the inner layer of the embedded circuit board 1 is provided with at least two semiconductor power devices 6, the semiconductor power devices 6 are horizontally arranged in the inner layer of the embedded circuit board 1, and the power electrodes of the semiconductor power devices 6 are electrically connected to a wiring layer 8 provided on the upper surface and / or the lower surface of the embedded circuit board 1 through an electrical connection path 7, and the power electrodes of the at least two semiconductor power devices 6 are connected in series through the wiring layer 8 to form at least one power conversion bridge arm; At least one high-frequency capacitor 2, the power conversion bridge arm is connected in parallel with the high-frequency capacitor 2 nearby to achieve low loop inductance interconnection; Insulating heat-conducting material, the insulating heat-conducting material is attached to the surface of the wiring layer 8, the insulating material can be an insulating heat-conducting carrier 3, an insulating heat-conducting coating, an insulating heat-conducting liquid, etc., and the insulating heat-conducting carrier 3 is used as a general term for explanation below. The insulating heat-conducting carrier includes a relatively heat-conducting upper surface and a heat-conducting lower surface; The packaging body 4 at least covers the embedded circuit board 1 and the insulating heat-conducting carrier 3, the two ends of the embedded circuit board 1 extend outside the plastic package, and the surface of the insulating heat-conducting carrier 3 is exposed. The packaging body 4 is not limited to plastic packaging or potting glue packaging 10 that has been cured into a solid or gel state (hereinafter, potting glue packaging is used for explanation). The packaging body 4 is only Figure 2A As marked in the figure, other embodiments can add the package body 4 according to this feature.

[0066] like Figure 2A As shown, taking a vertical switch device, two semiconductor power devices 6 as an example, the semiconductor power device 6 is first embedded in an embedded circuit board 1 through an embedded process, and the upper and lower surfaces are electroplated or drilled and then electroplated, and the power electrodes on the upper and lower surfaces of the semiconductor power device 6 are led out to the surface of the embedded circuit board 1 over a large area, thereby realizing low loop inductance interconnection and almost lossless thermal interface extraction. Since the lead-out stroke is very short (for example, less than 0.2 mm), the area is very large (close to the upper and lower surface area of ​​the semiconductor power device 6), and it is usually made of copper material, both the thermal resistance and the resistance are extremely small, so small that they can be almost ignored. Preferably, the area of ​​the power electrode wiring of the semiconductor power device 6 led out from the surface of the embedded circuit board and the overlapped area of ​​the semiconductor power device 6 projection is more than 60% relative to the area of ​​the semiconductor power device 6. After the electrode is led out, the power loops of the two semiconductor power devices 6 are connected to the high-frequency capacitor 2 nearby through the surface wiring of the embedded circuit board 1 to achieve low loop inductance.

[0067] Figure 2BThe current direction of the commutation loop is shown, flowing from Vbus+ through the semiconductor power device 6 on the left to the SW end, and connected to the semiconductor power device 6 on the right through the upper and lower connection holes of the embedded circuit board 1, and then flowing through the semiconductor power device 6 on the right to Vbus-. It should be noted that the dotted arrow part is staggered with the solid line part in the vertical direction of the paper, and can overlap in the vertical direction through the upper and lower layers of wiring in space. Since the current path is in the opposite direction, the loop inductance is reduced to a very low level.

[0068] like Figure 2A As shown, the heat dissipation component 5 is attached to the upper surface and / or lower surface of the insulating heat-conducting carrier 3, the electrical connection path 7 includes a metal via path (i.e., a high-density, high-thermal-conductivity and electrical-conductive path or a low-thermal-resistance path), and the embedded semiconductor power device 6 includes two opposite device surfaces, and the two device surfaces are respectively connected to the upper and lower surfaces of the embedded circuit board 1 through the metal via paths, and connected to the wiring layer 8 formed by the large-area surface metal layer arranged on the upper and lower surfaces. The metal layer can have the functions of both current conduction and heat conduction, or it can only have the function of heat conduction, and is also called a heat dissipation layer. In the present embodiment, the metal via path can be a high-density, high-thermal-conductivity and electrical-conductive path, or it can only be a low-thermal-resistance path with low thermal resistance characteristics. A heat dissipation component 5 is arranged between the metal layer on the surface of the embedded circuit board 1 and the external heat exchange environment to efficiently dissipate the heat generated by the semiconductor power device 6 to the environment. The heat dissipation component 5 is usually made of metal, such as Figure 2A The heat-conducting lower surface of the insulating heat-conducting carrier 3 is arranged to fit the heat dissipation surface of the upper surface and / or lower surface of the embedded circuit board 2. The surface of the insulating heat-conducting carrier 3 can be covered with patterned metal, that is, the insulating heat-conducting carrier 3 can be an insulating heat-conducting medium layer of a heat-conducting insulating carrier such as an aluminum oxide copper-clad ceramic substrate, an aluminum nitride copper-clad ceramic substrate, a silicon nitride copper-clad ceramic substrate, a beryllium oxide copper-clad ceramic substrate, an insulating metal substrate, etc. The metal layer covered on the surface of the insulating heat-conducting carrier 3 and the metal layer set on the surface of the embedded circuit board 1 can be electrically, thermally, and mechanically connected through sintering materials such as silver and copper, solder, conductive silver paste, and other high thermal conductivity materials. Figure 2A It can be seen that the heat generated by the semiconductor power device 6 will only pass through a layer of insulating heat-conducting carrier 3 when dissipating to the external environment through an upward or downward path. Although the selected insulating material has a relatively high thermal conductivity, the thermal conductivity of the insulating material is still relatively low compared to metals such as copper. Therefore, this structure has the best heat dissipation effect.

[0069] In a preferred embodiment, the heat dissipation component 5 is a heat exchange fin, which is integrally formed with the insulating heat conductive carrier 3, or the heat exchange fin is arranged on the surface of the insulating heat conductive carrier 3 by welding, sintering, etc. In addition, these fins can not only be independent, but also have a continuous substrate.

[0070] In some other embodiments, the electrical connection path 7 includes a bonding layer 9, and the bonding layer 9 bonds a surface of the semiconductor power device 6 to the wiring layer 8. The bonding layer 9 is a conductive material, such as Figure 3A As shown, since the vertical switch device is usually a three-port device, two power electrodes are respectively arranged on the upper and lower surfaces of the semiconductor power device 6 (such as the drain electrode of MOSFET or the collector of IGBT), and the control electrode (in order to make the drawings concise and easy to understand, the drawings of the embodiments of this article are not shown in detail) and one of the power electrodes are arranged on the same surface. Therefore, there is only one electrode on one surface of the semiconductor power device 6. At this time, the surface of the semiconductor power device 6 can be directly bonded to the wiring layer 8 of the embedded circuit board 1 through a bonding material (such as sintering materials such as silver and copper, solder, conductive silver paste, etc.) to form a bonding layer 9. In this way, a larger conductive and heat transfer area can be obtained compared to via connection, and there is a chance to obtain lower electrical impedance and thermal impedance.

[0071] In a preferred embodiment, the electrical connection path 7 further includes an inner redistribution layer 24, such as Figure 3B As shown, the inner redistribution layer 24 is horizontally arranged inside the embedded circuit board 1 to meet the requirements of complex wiring. Of course, the number of inner redistribution layers 24 arranged on one side or both sides of the semiconductor power device 6 can be flexibly set according to actual needs.

[0072] In a preferred embodiment, if Figure 4A As shown, the electrodes of the planar switching device are all led out on the same surface of the semiconductor power device 6. The surface of the semiconductor power device is the substrate of the semiconductor power device. After the electrodes are led out, they are wired through the embedded circuit board 1 to connect the power circuits of the two semiconductor power devices 6 to the high-frequency capacitor 2 nearby to achieve low loop inductance. The arrow lines in the figure describe the current direction of the commutation loop. It should be noted that the dotted arrow part is offset from the solid line part in the direction perpendicular to the paper. Since the current directions on the path are opposite, the loop inductance can be controlled to be extremely low. Figure 4B As shown, the non-functional surface of the planar switching device semiconductor power device 6 can be directly bonded to the wiring layer 8 of the embedded circuit board 1 through a bonding layer 9 (conductive materials such as sintered materials such as silver and copper, solder, conductive silver paste, etc.; non-conductive materials such as ceramic paste, glass paste, high thermal conductivity epoxy glue, high thermal conductivity organic silicone, etc.) to form a bonding layer 9.

[0073] In some other embodiments, the connection direction of the two semiconductor power devices 6 is a first direction, and in the same horizontal plane, a direction perpendicular to the first direction is a second direction; the high-frequency capacitor 2 is arranged in the second direction. Figure 5A , Figure 5BAs shown, the high-frequency capacitor 2 is arranged on the extending direction of the embedded circuit board 1 perpendicular to the AA section, and Vbus+ and Vbus- can also be led out in the form of stacking in this direction. Figure 5A The figure shows the current direction of the AA cross-section circulating current loop. It can be seen that the current is opposite along the paper plane and the current is also opposite in the direction perpendicular to the paper plane, so the loop inductance is very small.

[0074] In a preferred embodiment, an interconnection metal layer 25 is provided in the embedded circuit board 1 at the same height as the semiconductor power device 6, and at least two semiconductor power devices 6 are connected in series through the interconnection metal layer 25; on the vertical cross section of the interconnection metal layer 25, the projections of the wiring layer connected to the two electrodes of the high-frequency capacitor 2 overlap, such as Figure 5C As shown, the loop parasitic inductance can be further reduced.

[0075] In some other embodiments, the high-frequency capacitor 2 is disposed on a surface of the embedded circuit board 1 and is located between two semiconductor power devices 6 of a power conversion bridge arm; a space avoidance structure for accommodating the high-frequency capacitor 2 is disposed on the insulating heat-conducting carrier 3 and / or the heat dissipation component 5, such as Fig. 6A As shown, the high-frequency capacitor 2 is arranged on the surface of the embedded circuit board 1 and is located between the two semiconductor power devices 6. From the current flow of the power loop in the figure, it can be seen that the current directions of the upper and lower layers are opposite, so the loop inductance is extremely small. In order to avoid the high-frequency capacitor 2, it is necessary to open a hole between the insulating heat-conducting carrier plate 3 on one side, and the corresponding heat dissipation component 5 may also need to be avoided in space.

[0076] In a preferred embodiment, an opening structure is provided on the embedded circuit board 1, and the opening structure is located between two semiconductor power devices 6 of a power conversion bridge arm, and the high-frequency capacitor 2 is arranged at the opening structure. Figure 6B shown.

[0077] In a preferred embodiment, the high-frequency capacitor 2 is embedded in the embedded circuit board 1, and the high-frequency capacitor 2 is located between two semiconductor power devices 6 of a power conversion bridge arm. Figure 6C shown.

[0078] In other embodiments, the encapsulation body 4 is formed by encapsulating a potting glue package 10, and the heat dissipation component 5 includes an upper heat dissipation component and a lower heat dissipation component, and the upper heat dissipation component and the lower heat dissipation component are respectively located on the upper and lower sides of the embedded circuit board 1; the upper heat dissipation component and the lower heat dissipation component are sealed and connected to one side of the embedded circuit board 1 to form a cavity structure, and the cavity structure is filled with liquid potting glue, and the potting glue package 10 is formed through curing. In order to reduce the creepage distance between the circuit board surface lines and the insulating heat-conducting substrate 3 surface lines, it is a very effective method to fill these areas with insulating materials, among which using liquid potting glue and curing to form a potting glue package 10 (such as liquid epoxy potting glue, silicone potting glue, etc.) is one of the most commonly used methods. Fig. 7A As shown, firstly, the upper and lower heat dissipation components are respectively assembled with the insulating heat-conducting carrier plate 3 using materials such as silver, copper sintering materials, solder, silver paste, etc. Then, a sealing member 11 such as liquid sealant is arranged between the upper and lower heat dissipation components. Of course, the sealing interface can also be closed by welding, such as fusion welding, stir friction welding, etc. Then, the potting glue is poured into the cavity formed by the upper and lower heat dissipation components and solidified. In order to achieve a good filling effect, vacuum degassing and other processes can be used.

[0079] In a preferred embodiment, the embedded circuit board 1 extends out of the cavity structure in at least two directions, such as Figure 7B As shown, Fig. 7A The difference is that the embedded circuit board 1 extends out of the closed space formed by the heat dissipation component 5 in two or more directions to increase the convenience of input and output.

[0080] Furthermore, a liquid cooling cover plate 12 is disposed outside the heat dissipation component 5. A sealing ring can be used to prevent leakage between the liquid cooling cover plate 12 and the heat dissipation component 5, or welding, such as fusion welding, stir friction welding, etc. can be used to seal. Figure 7C shown.

[0081] In a preferred embodiment, it further comprises a shell 13, one end of which is open, and the middle of the shell 13 is provided with an opening for accommodating the heat dissipation component 5, and the shell 13 is sealed and connected with the heat dissipation component 5 to form a cavity structure, and the cavity structure is filled with liquid potting glue, and the potting glue package 10 is formed through curing. Fig.7D As shown, one end of the housing 13 is open to expose one end of the embedded circuit board 1, and is open at the upper and lower heat dissipation components. The material of the housing 13 is not limited to metal, non-metal, etc. Then, the upper and lower heat dissipation components are respectively assembled with the insulating heat-conducting carrier 3 using materials such as silver, copper sintering materials, solder, silver paste, etc. Then, the upper and lower heat dissipation components and the housing 13 are closed by sealant. Of course, the sealing interface can also be closed by welding, such as fusion welding, stir friction welding, etc. In this way, the processing surfaces are all plane processing, avoiding three-dimensional processing.

[0082] Furthermore, in order to absorb assembly tolerance, a thin-wall structure 26 may be provided between the heat dissipation component 5 and the housing 13 .

[0083] In some other embodiments, sealing baffles 14 are further provided on both sides of the heat dissipation component 5, and a sealing baffle 14 is provided with a glue injection opening 15. The sealing baffle 14 is sealed and connected with the heat dissipation component 5 to form a cavity structure, and the cavity structure is filled with liquid potting glue, and the potting glue package 10 is formed through curing. Fig. 8A As shown, the sealing baffle 14 is made of sealing material, such as liquid sealant, etc. Of course, the sealing interfaces that need to be sealed can also be closed by welding, such as fusion welding, stir friction welding, etc., and then the sealing glue is injected through the glue injection opening 15.

[0084] Furthermore, the sealing baffle 14 is a special-shaped sealing baffle 14 to envelop a larger cavity structure, such as Figure 8B As shown, it is convenient to use a larger motherboard and integrate more functions, such as drive components, etc. Of course, the sealing baffle 14 can also be formed integrally with the heat dissipation component 5, that is, the heat dissipation component 5 is also the outer shell of the module.

[0085] In other embodiments, the gap between the insulating heat-conducting carrier plate 3 and the wiring layer 8 is pre-filled with dot-shaped insulating glue 16, and the side wall of the insulating heat-conducting carrier plate 3 has a step-shaped structure 17, such as Fig. 9A , Fig. 9B As shown, first, the gaps between the wiring layers of the insulating heat-conducting carrier 3 are filled by dispensing glue, compression molding, etc. This can effectively reduce the amount of glue used in the subsequent process and the risk of mixing bubbles. Further, the peripheral circuit side walls of the insulating heat-conducting carrier 3 can also be protected by protective glue 27, which can greatly improve the reliability of the insulating heat-conducting carrier 3. Furthermore, the shape of the wiring side walls of the insulating heat-conducting carrier 3 can be set to a step-like structure 17, which can further improve the reliability of the insulating heat-conducting carrier 3. Then, the bonding material and the dot-shaped insulating glue 16 are set on the insulating heat-conducting carrier 3 or the embedded circuit board 1 as needed. Subsequently, the insulating heat-conducting carrier 3 and the embedded circuit board 1 are laminated and assembled by reflow, sintering, etc. It should be noted that the molding process of the bonding material and the curing process of the insulating glue must be compatible. Such a material combination can be solder paste for bonding material, SMT red glue for insulating material, or reflow underfill. When using silver or copper sintering materials for bonding materials and conductive silver paste, use thermosetting glue with a similar curing curve for insulating glue.

[0086] In some other embodiments, the insulating thermally conductive material is a high thermally conductive insulating film 18, and the thermal conductivity of the high thermally conductive insulating film 18 is greater than 5 W / mK. Fig. 10A , Fig. 10B As shown, the high thermal conductivity insulating film 18 used is a high thermal conductivity material filled with ceramic particles in an organic material, which has a certain deformation absorption capacity, and also has a high thermal conductivity coefficient (>5W / mK) and high insulation capacity. Fig. 10A ) or heat dissipation component with heat exchange fins 5 ( Fig. 10B ) adheres to the outside of the high thermal conductive insulating film 18.

[0087] In some other embodiments, the module also includes a system motherboard 19, and the embedded circuit board 1 is electrically connected to the system motherboard 19. Since the embedded circuit board 1 has high precision requirements and complex processing technology, it leads to high costs. Therefore, a more economical approach is to use embedded technology to process key parts, while the rest uses traditional printed circuit boards. Therefore, the connection method between the system motherboard 19 and the embedded circuit board 1 needs to be considered. Fig.11A As shown, the embedded circuit board 1 is soldered on the system main board 19 to achieve the connection between the embedded circuit board 1 and the system main board 19 .

[0088] Furthermore, the embedded circuit board 1 can be implanted in the system mainboard 19, such as Fig. 11B , Fig. 11C As shown, the embedded circuit board 1 is implanted into the system mainboard 19 and electrically connected to the structure 20 ( Fig. 11B , Fig. 11C ) or surface wiring layer 8 ( Fig. 11B ) realizes the electrical connection between the system main board 19 and the embedded circuit board 1.

[0089] Furthermore, the high-frequency capacitor 2 can also be set on the system mainboard 19, and the high-frequency capacitor 2 is close to the embedded circuit board 1, such as Fig.11D As shown, the embedded circuit board 1 is soldered on the system mainboard 19 , and the high-frequency capacitor 2 is placed at a position on the system mainboard 19 that is closest to the embedded circuit board 1 .

[0090] The advantage of this embodiment is that the interconnection wires between the embedded circuit board 1 and the system mainboard 19 are very short. Fig.11D Placing the high-frequency capacitor 2 on the system mainboard 19 also has the opportunity to achieve a very small loop inductance. Compared with placing the high-frequency capacitor 2 on the embedded circuit board 1, the loop inductance will increase slightly, but it is also much better than the existing solution, meeting the needs of many scenarios, and also reducing the complexity of the embedded circuit board 1, improving the yield rate and the compactness of the heat dissipation system.

[0091] FIG. 12A to FIG. 12D It shows that Fig. 11B The steps of making the module shown are as follows: S1: A temporary protective layer 23 is provided on the upper surface of the embedded circuit board 1, such as Fig. 12AAs shown, since the lower surface of the embedded circuit board 1 is flush with the surface of the system mainboard 19, the lower surface of the embedded circuit board 1 does not need to be affixed with a temporary protective layer 23, and the pattern segmentation of this surface may not be performed when the embedded circuit board 1 is manufactured; S2: The embedded circuit board 1 is arranged in the system main board 19, and the surface of the embedded circuit board 1 not provided with the temporary protection layer 23 is flush with a surface of the system main board 19; S3: Complete the setting of the through-hole electrical connection structure 20 and the surface wiring layer, such as Fig. 12B As shown, it should be noted that the stacked structure of the system mainboard 19 can be processed with windows for the prepreg (PP), core board, etc. located at the position of the embedded circuit board 1 according to actual needs; S4: Cut and remove the outer periphery of the embedded circuit board 1 that needs to be exposed, exposing the temporary protection layer 23, such as Fig. 12C As shown, the entire surface can also be removed; S5: removing the temporary protective layer 23, such as Fig.12D As shown, the final structure is formed.

[0092] FIG. 13A to FIG. 13D Shown as Fig. 11C The steps of making the module shown are as follows: S1: A temporary protective layer 23 is provided on the upper and lower surfaces of the embedded circuit board 1, such as Fig.13A As shown; S2: placing the embedded circuit board 1 in the system mainboard 19; S3: Complete the setting of the through-hole electrical connection structure 20, such as Fig. 13B As shown, it should be noted that the stacked structure of the system mainboard 19 may require the prepreg (PP), core board, etc. located at the position of the embedded circuit board 1 to be windowed according to actual needs. ; S4: Cut and remove the periphery of the embedded circuit board 1 that needs to be exposed, exposing the temporary protection layer 23, such as Fig. 13C As shown; S5: removing the temporary protective layer 23 to form a final structure, such as Fig.13D shown.

[0093] In some other embodiments, a liquid cooling cover plate 12 is disposed outside the heat dissipation component 5, a sealing member 11 is disposed at the connection between the liquid cooling cover plate 12 and the heat dissipation component 5, the liquid cooling cover plate 12 extends beyond the side of the heat dissipation component 5 to form a liquid flow channel 28, and a magnetic element 21 is disposed on the inner side of the liquid flow channel 28; a sealing baffle 14 is disposed outside the liquid flow channel 28 to seal the magnetic element 21 inside; one or more of a driving element, a low-frequency large-volume element, a control unit, and a magnetic element 21 are disposed on the system mainboard 19 in the cavity structure. Fig.14AAs shown, the system mainboard 19 integrates multiple functions, such as a controller, a low-frequency large-volume capacitor, and a magnetic element 21 used in a switching power supply, such as an inductor or a transformer. Moreover, the liquid cooling cover 12 can dissipate heat for the magnetic element 21. Furthermore, a liquid flow channel 28 can be integrated inside the liquid cooling cover 12 at a position corresponding to the magnetic element 21 to further enhance its heat dissipation capability, and the cooling water used and the liquid used for heat dissipation of the semiconductor power device 6 are from the same source to further simplify the cooling design.

[0094] In a preferred embodiment, the sealing baffle 14 between the liquid flow channel 28 and the heat dissipation component 5 is removed, so that the liquid flow channel 28, the heat dissipation component 5, and the sealing baffle 14 form a larger cavity structure. Fig. 14B As shown, relative Fig.14A The main difference is that the potting part further includes the magnetic component 21, which is of great help in improving the withstand voltage of the magnetic component 21, especially the withstand voltage of the primary and secondary sides of the transformer, and reducing the spatial distance between the terminals.

[0095] In a preferred embodiment, in the same cavity structure, a plurality of embedded circuit boards 1 are arranged on the system main board 19, and one or more of a driving element, a low-frequency large-volume element, a control unit, and a magnetic element 21 are arranged on the system main board 19 near each embedded circuit board 1 to form a circuit unit. Fig. 14C As shown, relative Fig. 14B The main difference is that the glue-filling part includes more embedded circuit boards 1 and integrates more secondary side drive, control, capacitor and other components to achieve more complex circuit functions. Furthermore, multiple circuit units are integrated on a system motherboard 19, such as Fig.14D As shown, multiple Fig. 12C The module shown is integrated onto a system motherboard 19 for power expansion.

[0096] In some other embodiments, the package body 4 is formed by packaging with a plastic packaging material, such as Fig.15A As shown in the figure, the transfer molding method can better fill the tiny gaps with the help of injection pressure. And because the strength of the plastic molding material is relatively high, it can also play a role in reinforcing the structure.

[0097] In a preferred embodiment, a vertical through hole is formed on the embedded circuit board 1, and the high-frequency capacitor 2 is arranged in the through hole. Fig. 15B As shown, holes can be opened between the embedded circuit boards 1 to assemble high-frequency capacitors 2 with relatively high thickness, and the terminals of the high-frequency capacitors 2 can be connected to the surface and side walls of the embedded circuit board 1 through solder.

[0098] Furthermore, we can Fig. 15CAs shown, horizontal terminals 22 are arranged at both ends of the high-frequency capacitor 2. Due to the structural strengthening effect of the plastic packaging material, the risk of cracking of the high-frequency capacitor 2 body and the connection position caused by the installation of the through-type high-frequency capacitor 2 can be effectively avoided.

[0099] On the other hand, the embodiment of the present invention also discloses an embedded integrated device unit for a high heat dissipation high frequency power module, comprising an embedded circuit board 1, at least two semiconductor power devices 6, at least one high frequency capacitor 2 and an insulating heat conductive carrier 3; The embedded circuit board 1 includes an upper surface and a lower surface relative to each other, an inner layer, at least one electrical connection path 7 and at least one high-density high-thermal conductivity conductive path, and the upper surface or the lower surface includes at least one wiring layer 8; at least two semiconductor power devices 6 are arranged horizontally on the inner layer of the embedded circuit board 1, each semiconductor power device 6 includes a power electrode, and the power electrodes of at least two semiconductor power devices 6 are electrically connected to the wiring layer 8 through the electrical connection path 7, and the power electrodes of at least two semiconductor power devices 6 are connected in series (through the wiring layer 8) to form at least one power conversion bridge arm; the semiconductor power device 6 includes two relative device surfaces, at least one device surface is connected to the wiring layer through a high-density high-thermal conductivity conductive path, and the wiring layer connected to the high-density high-thermal conductivity conductive path can be used as a heat dissipation surface and is arranged in contact with the insulating heat-conducting carrier 3; the embedded circuit board includes at least two DC power electrodes, and the two ends of the high-frequency capacitor are electrically connected to the two DC power electrodes respectively, so that the power conversion bridge arm is connected in parallel with the high-frequency capacitor to achieve low-loop electrical interconnection.

[0100] In a preferred embodiment, the embedded integrated device unit includes an upper heat dissipation surface and a lower heat dissipation surface relative to each other. The device surface of each semiconductor power device 6 is electrically connected to the wiring layers 8 on the upper and lower surfaces of the embedded circuit board 1 through a high-density and high-thermal conductivity electrical connection path. The wiring layers 8 are the upper and lower heat dissipation surfaces of the semiconductor power device 6. At least two insulating heat-conducting carriers 3 are respectively attached to the upper and lower heat dissipation surfaces to achieve double-sided heat dissipation.

[0101] In a preferred embodiment, the semiconductor power device 6 is a vertical switching device, and the device surface corresponding to the upper heat dissipation surface or the lower heat dissipation surface of the embedded integrated device unit is the drain electrode of the MOSFET or the collector of the IGBT; in some other embodiments, the semiconductor power device 6 can also be a planar switching device, and the surface of the semiconductor power device 3 corresponding to the upper heat dissipation surface or the lower heat dissipation surface of the embedded integrated device unit is the substrate of the semiconductor power device.

[0102] On the other hand, an embodiment of the present invention further discloses a double-sided heat dissipation power converter, comprising: a double-sided heat dissipation package integrated device unit, at least two insulating heat-conducting substrates, at least one large-area multilayer circuit board, at least one high-frequency capacitor, at least one magnetic component, at least one driving element and two heat dissipation components; the double-sided heat dissipation package integrated device unit comprises at least two semiconductor power devices 6, opposite device unit upper surfaces and device unit lower surfaces and at least two low thermal resistance channels, each semiconductor power device 6 comprises a power electrode and two opposite device surfaces, the power electrodes of each semiconductor power device 6 are connected in series to form a bridge arm, and the two device surfaces of each semiconductor power device 6 are connected through the corresponding low thermal resistance channel The upper surface of the device unit and the lower surface of the device unit are connected; at least two insulating heat-conducting substrates are respectively arranged on the upper surface of the device unit and the lower surface of the device unit; the large-area multilayer circuit board includes at least one opening, and the opening is used to install the double-sided heat dissipation package integrated device unit; at least one high-frequency capacitor is arranged adjacent to the bridge arm, the bridge arm includes at least two DC electrodes and a bridge arm midpoint, and the two ends of the high-frequency capacitor are respectively electrically connected to the at least two DC electrodes to form a low-loop power channel; at least one driving element is used to drive the semiconductor power device at high frequency; at least one magnetic element is connected to the midpoint of the bridge arm, and the bridge arm and the magnetic element together realize the high-frequency energy conversion function; two heat dissipation components are respectively arranged on the outer surfaces of the insulating heat-conducting substrate and the magnetic element.

[0103] The embodiments disclosed in the present invention all have excellent double-sided heat dissipation capabilities, but even if the technical features disclosed in the present invention are applied to a single-sided heat dissipation device, good heat dissipation capabilities can be achieved while taking into account high-frequency electrical capabilities.

[0104] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0105] The above description of the disclosed embodiments enables one skilled in the art to implement or use the present invention. Various modifications to these embodiments will be apparent to one skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but rather to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A high heat dissipation high frequency power module, characterized in that: include: At least one embedded circuit board, at least two semiconductor power devices, at least one high-frequency capacitor and an insulating heat-conducting carrier; The embedded circuit board includes an upper surface and a lower surface facing each other, an inner layer, at least one electrical connection path, and at least one high-density high-thermal-conductivity electrical connection path; the upper surface of the embedded circuit board includes a first wiring layer, and the lower surface of the embedded circuit board includes a second wiring layer; The at least two semiconductor power devices are placed in the at least one embedded circuit board, each of the semiconductor power devices includes a power electrode, the power electrodes of the at least two semiconductor power devices are electrically connected to the first wiring layer or the second wiring layer through the electrical connection path, and the power electrodes of the at least two semiconductor power devices are electrically connected inside the power module to form at least one power conversion bridge arm; The semiconductor power device comprises two opposite device surfaces, the two device surfaces are respectively connected to the first wiring layer and the second wiring layer through the high-density and high-thermal-conductivity conductive paths, and the first wiring layer and the second wiring layer are both heat dissipation surfaces; The high-frequency capacitor is disposed adjacent to the power conversion bridge arm and is electrically connected in parallel with the power conversion bridge arm to achieve low-loop electrical interconnection; The insulating heat-conducting carrier plate comprises an opposite heat-conducting upper surface and a heat-conducting lower surface, the heat-conducting lower surface is arranged in close contact with the heat dissipation surface, and the insulating heat-conducting carrier plate covers an area corresponding to the power conversion bridge arm; The connection direction of the at least two semiconductor power devices is a first direction; in the same horizontal plane, a direction perpendicular to the first direction is a second direction; The high frequency capacitor is arranged in a second direction; The at least two semiconductor power devices, the first wiring layer and the second wiring layer form an "∞"-shaped electrical path in the cross section in the first direction, and the electrical path flows from the Vbus+ end to the Vbus- end; the Vbus+ end and the Vbus- end are respectively located on the lower surface and the upper surface of the embedded circuit board; the Vbus+ end and the Vbus- end are led out in the form of a stack in the second direction to realize the low-loop electrical interconnection.

2. The high heat dissipation high frequency power module according to claim 1, characterized in that: The invention also includes a packaging body and a heat dissipation component, wherein the packaging body at least covers a portion of the embedded circuit board and the insulating heat-conductive carrier, at least one end of the embedded circuit board directly or indirectly electrically extends beyond the projection of the insulating heat-conductive carrier on the embedded circuit board, and the heat-conductive upper surface of the insulating heat-conductive carrier is exposed; and the heat dissipation component is attached to the surface of the insulating heat-conductive carrier.

3. The high heat dissipation high frequency power module according to claim 2, characterized in that: The packaging body is formed by encapsulating with potting glue; the heat dissipation component includes an upper heat dissipation component and a lower heat dissipation component, and the upper heat dissipation component and the lower heat dissipation component are respectively located on the upper and lower sides of the embedded circuit board; the upper heat dissipation component and the lower heat dissipation component are sealed and connected on one side of the embedded circuit board to form a cavity structure, and the cavity structure is filled with liquid potting glue, and the liquid canned glue is solidified in the cavity structure.

4. The high heat dissipation high frequency power module according to claim 1, characterized in that: The packaging body is formed by packaging with a plastic packaging material; the gap between the insulating heat-conducting carrier and the first wiring layer or the second wiring layer is pre-filled with dot glue, and the side wall of the insulating heat-conducting carrier has a step-shaped structure.

5. The high heat dissipation high frequency power module according to claim 1, characterized in that: It also includes a system mainboard, the embedded circuit board is implanted in the system mainboard and electrically connected to the system mainboard; one side of the embedded circuit board is flush with one side of the system mainboard, or the surface of the embedded circuit board is located inside the system mainboard; the embedded circuit board and the system mainboard are electrically connected via a through-hole electrical connection structure and / or a surface wiring layer.

6. The high heat dissipation high frequency power module according to claim 1, characterized in that: The at least two semiconductor power devices arranged in the same power conversion bridge arm are arranged in the same embedded circuit board.

7. A high heat dissipation high frequency power group, characterized in that: include: At least one embedded circuit board, at least two semiconductor power devices, at least one high-frequency capacitor and an insulating heat-conducting carrier; The embedded circuit board includes an upper surface and a lower surface facing each other, an inner layer, at least one electrical connection path, and at least one high-density high-thermal-conductivity electrical connection path; the upper surface of the embedded circuit board includes a first wiring layer, and the lower surface of the embedded circuit board includes a second wiring layer; The at least two semiconductor power devices are placed in the at least one embedded circuit board, each of the semiconductor power devices includes a power electrode, the power electrodes of the at least two semiconductor power devices are electrically connected to the first wiring layer or the second wiring layer through the electrical connection path, and the power electrodes of the at least two semiconductor power devices are electrically connected inside the power module to form at least one power conversion bridge arm; The semiconductor power device comprises two opposite device surfaces, the two device surfaces are respectively connected to the first wiring layer and the second wiring layer through the high-density and high-thermal-conductivity conductive paths, and the first wiring layer and the second wiring layer are both heat dissipation surfaces; The high-frequency capacitor is disposed adjacent to the power conversion bridge arm and is electrically connected in parallel with the power conversion bridge arm to achieve low-loop electrical interconnection; The insulating heat-conducting carrier plate comprises an opposite heat-conducting upper surface and a heat-conducting lower surface, the heat-conducting lower surface is arranged in contact with the heat dissipation surface, and the insulating heat-conducting carrier plate covers an area corresponding to the power conversion bridge arm; The high-frequency capacitor is arranged outside the coverage area of ​​the insulating heat-conducting carrier plate.

8. The high heat dissipation high frequency power module according to claim 7, characterized in that: The entire row of capacitors is arranged parallel to the edge of the heat dissipation component.

9. The high heat dissipation high frequency power module according to claim 7, characterized in that: The invention also includes a packaging body and a heat dissipation component, wherein the packaging body at least covers a portion of the embedded circuit board and the insulating heat-conductive carrier, at least one end of the embedded circuit board directly or indirectly electrically extends beyond the projection of the insulating heat-conductive carrier on the embedded circuit board, and the heat-conductive upper surface of the insulating heat-conductive carrier is exposed; and the heat dissipation component is attached to the surface of the insulating heat-conductive carrier.

10. A high heat dissipation high frequency power group as claimed in claim 9, characterized in that: The heat dissipation component comprises an upper heat dissipation component and a lower heat dissipation component, and the upper heat dissipation component and the lower heat dissipation component are respectively located at the upper and lower sides of the embedded circuit board.

11. A high heat dissipation high frequency power group as claimed in claim 10, characterized in that: The packaging body is formed by encapsulating with potting glue; the upper heat dissipation component and the lower heat dissipation component are sealed and connected on one side of the embedded circuit board to form a cavity structure, and the cavity structure is filled with liquid potting glue, and the liquid potting glue is solidified in the cavity structure.

12. A high heat dissipation high frequency power group as claimed in claim 11, characterized in that: The at least one embedded circuit board extends out of the cavity structure in at least two directions.

13. A high heat dissipation high frequency power group as claimed in claim 11, characterized in that: The high heat dissipation and high frequency power module also includes a liquid cooling cover plate and a sealing member, which are arranged outside the heat dissipation component. The sealing member is arranged at the connection between the liquid cooling cover plate and the heat dissipation component.

14. A high heat dissipation high frequency power group as claimed in claim 11, characterized in that: The high heat dissipation high frequency power module also includes a shell, one end of the shell is open, the other end of the shell is closed, the middle of the shell is provided with an opening for accommodating a heat dissipation component, the shell is sealed and connected to the heat dissipation component to form a cavity structure, and the cavity structure is filled with liquid potting glue.

15. A high heat dissipation high frequency power group as claimed in claim 14, characterized in that: The high heat dissipation high frequency power module also includes a thin-wall structure, which is arranged between the housing and the heat dissipation component, and is used to compensate for assembly tolerance.

16. The high heat dissipation high frequency power module according to claim 11, characterized in that: The high heat dissipation high frequency power module also includes a sealing baffle, which is arranged on both sides of the heat dissipation component. A glue injection opening is opened on one of the sealing baffles. The sealing baffle is sealed and connected to the heat dissipation component to form a cavity structure, and the cavity structure is filled with liquid potting glue.

17. The high heat dissipation high frequency power module according to claim 16, characterized in that: The sealing baffle is a special-shaped baffle to envelop and form a larger cavity structure.

18. The high heat dissipation and high frequency power module according to claim 7, characterized in that: The packaging body is formed by packaging with a plastic packaging material; the gap between the insulating heat-conducting carrier and the first wiring layer or the second wiring layer is pre-filled with dot glue, and the side wall of the insulating heat-conducting carrier has a step-shaped structure.

19. The high heat dissipation and high frequency power module according to claim 7, characterized in that: It also includes a system mainboard, and the embedded circuit board is electrically connected to the system mainboard.

20. The high heat dissipation and high frequency power module according to claim 19, characterized in that: The embedded circuit board is implanted in the system mainboard or welded on the system mainboard; one side of the embedded circuit board is flush with one side of the system mainboard, or the surface of the embedded circuit board is located inside the system mainboard; the embedded circuit board and the system mainboard are electrically connected via a through-hole electrical connection structure and / or a surface wiring layer.

21. The high heat dissipation and high frequency power module according to claim 20, characterized in that: The high-frequency capacitor is arranged on the system mainboard, and the high-frequency capacitor is close to the embedded circuit board; it also includes a heat dissipation component, and the heat dissipation component is attached to the heat-conductive upper surface of the insulating heat-conductive carrier plate. Sealing baffles are also arranged on both sides of the heat dissipation component, and the sealing baffles are sealed and connected with the heat dissipation component to form a cavity structure, and the cavity structure is filled with liquid potting glue.

22. The high heat dissipation high frequency power module according to claim 21, characterized in that: A liquid cooling cover plate is arranged outside the heat dissipation component, and a sealing member is arranged at the connection between the liquid cooling cover plate and the heat dissipation component.

23. The high heat dissipation high frequency power module according to claim 22, characterized in that: The liquid cooling cover plate extends beyond the side of the heat dissipation component to form a liquid flow channel, and a magnetic element is disposed on the inner side of the liquid flow channel; The outer side of the liquid flow channel is provided with a sealing baffle to seal the magnetic element inside.

24. The high heat dissipation and high frequency power module according to claim 23, characterized in that: The sealing baffle between the liquid flow channel and the heat dissipation component is removed, so that the liquid flow channel, the heat dissipation component and the sealing baffle form a cavity structure.

25. The high heat dissipation and high frequency power module according to claim 21, characterized in that: One or more of a driving element, a low-frequency large-volume element, a control unit, and a magnetic element are arranged on the system mainboard in the cavity structure.

26. The high heat dissipation high frequency power module according to claim 24, characterized in that: In the same cavity structure, a plurality of embedded circuit boards are arranged on the system main board, and one or more of a driving element, a low-frequency large-volume element, a control unit, and a magnetic element are arranged on the system main board near each of the embedded circuit boards to form a circuit unit; and a plurality of the circuit units are integrated on a customer main board.

27. The high heat dissipation and high frequency power module according to claim 7, characterized in that: The embedded circuit board is provided with a vertical through-hole, and the high-frequency capacitor is arranged in the through-hole.

28. The high heat dissipation and high frequency power module according to claim 7, characterized in that: The at least two semiconductor power devices arranged in the same power conversion bridge arm are arranged in the same embedded circuit board.

29. A method for manufacturing a high heat dissipation high frequency power module as claimed in claim 20, characterized in that: The steps include: S1: Setting a temporary protective layer on a surface of the embedded circuit board; S2: placing the embedded circuit board in the system mainboard, wherein a surface of the embedded circuit board not provided with the temporary protective layer is flush with a surface of the system mainboard; S3: Complete the setting of through-hole electrical connection structure and surface wiring layer; S4: Cut and remove the periphery of the embedded circuit board that needs to be exposed, exposing the temporary protective layer; S5: Remove the temporary protective layer.

30. A method for manufacturing a high heat dissipation high frequency power module as claimed in claim 20, characterized in that: The steps include: S1: setting temporary protective layers on the upper and lower surfaces of the embedded circuit board respectively; S2: Setting the embedded circuit board in the system main board; S3: completing the setting of the through-hole electrical connection structure; S4: Cut and remove the periphery of the embedded circuit board that needs to be exposed, exposing the temporary protective layer; S5: Remove the temporary protective layer.

31. A high heat dissipation high frequency power module, characterized in that: include: At least one embedded circuit board, at least two semiconductor power devices, at least one high-frequency capacitor, an insulating heat-conducting carrier plate and a double-sided heat-dissipating semi-enclosed heat-dissipating cover; The embedded circuit board includes an upper surface and a lower surface facing each other, an inner layer, and at least two electrical connection paths, wherein the electrical connection paths include high-density and high-thermal-conductivity electrical and conductive paths; the upper surface of the embedded circuit board includes a first wiring layer, and the lower surface of the embedded circuit board includes a second wiring layer; The at least two semiconductor power devices are placed in the at least one embedded circuit board, each of the semiconductor power devices includes a power electrode, the power electrodes of the at least two semiconductor power devices are electrically connected to the first wiring layer or the second wiring layer through the electrical connection path, and the power electrodes of the at least two semiconductor power devices are electrically connected inside the power module to form at least one power conversion bridge arm; The semiconductor power device comprises two opposite device surfaces, wherein the two device surfaces are respectively connected to the first wiring layer and the second wiring layer through the high-density and high-thermal-conductivity conductive paths. The first wiring layer and the second wiring layer are both heat dissipation surfaces; The high-frequency capacitor is disposed adjacent to the power conversion bridge arm and is electrically connected in parallel with the power conversion bridge arm to achieve low-loop electrical interconnection; The insulating heat-conducting carrier plate comprises an opposite heat-conducting upper surface and a heat-conducting lower surface, the heat-conducting lower surface is arranged in contact with the heat dissipation surface, and the insulating heat-conducting carrier plate covers an area corresponding to the power conversion bridge arm; The double-sided heat dissipation semi-enclosed heat dissipation cover includes an upper heat dissipation component and a lower heat dissipation component, and the upper heat dissipation component and the lower heat dissipation component are respectively located on the upper and lower sides of at least one embedded circuit board; the upper heat dissipation component and the lower heat dissipation component are sealed and connected to one side of at least one embedded circuit board to form a cavity structure, and the cavity structure is filled with liquid potting glue, and the liquid potting glue is solidified in the cavity structure.

32. The high heat dissipation high frequency power module according to claim 31, characterized in that: The connection direction of the at least two semiconductor power devices is a first direction; in the same horizontal plane, a direction perpendicular to the first direction is a second direction; The high frequency capacitor is arranged in the second direction.

33. The high heat dissipation high frequency power module according to claim 31, characterized in that: The at least one embedded circuit board extends out of the cavity structure in at least two directions.

34. The high heat dissipation high frequency power module according to claim 31, characterized in that: The high heat dissipation and high frequency power module also includes a liquid cooling cover plate and a sealing member, which are arranged outside the heat dissipation component. The sealing member is arranged at the connection between the liquid cooling cover plate and the heat dissipation component.

35. The high heat dissipation high frequency power module according to claim 31, characterized in that: The high heat dissipation high frequency power module also includes a shell, one end of the shell is open, the other end of the shell is closed, the middle of the shell is provided with an opening for accommodating a heat dissipation component, the shell is sealed and connected to the heat dissipation component to form a cavity structure, and the cavity structure is filled with liquid potting glue.

36. The high heat dissipation high frequency power module according to claim 35, characterized in that: The high heat dissipation high frequency power module also includes a thin-wall structure, which is arranged between the housing and the heat dissipation component, and is used to compensate for assembly tolerance.

37. The high heat dissipation high frequency power module according to claim 31, characterized in that: The high heat dissipation high frequency power module also includes a sealing baffle, which is arranged on both sides of the heat dissipation component. A glue injection opening is opened on one of the sealing baffles. The sealing baffle is sealed and connected to the heat dissipation component to form a cavity structure, and the cavity structure is filled with liquid potting glue.

38. The high heat dissipation high frequency power module according to claim 37, characterized in that: The sealing baffle is a special-shaped baffle to envelop and form a larger cavity structure.

39. The high heat dissipation and high frequency power module according to claim 31, characterized in that: Two insulating heat-conducting carriers are provided, and the two insulating heat-conducting carriers are respectively attached to the heat dissipation surface on the upper surface and the heat dissipation surface on the lower surface of the embedded circuit board.

40. The high heat dissipation and high frequency power module according to claim 31, characterized in that: The at least two semiconductor power devices arranged in the same power conversion bridge arm are arranged in the same embedded circuit board.

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