Bigrid regulation and control injection-free light-emitting device preparation process

Abstract

The invention discloses a bigrid regulation and control injection-free light-emitting device preparation process, which comprises the following steps of: coating a first conductive layer on a substrate and photoetching to form a first carrier driving electrode, a first grid regulation and control electrode and a second grid regulation and control electrode; coating a first insulating layer on the first carrier driving electrode and photoetching to form a first non-injection insulating dielectric layer; preparing a light-emitting functional layer on the first injection-free insulating dielectric layer; coating a second insulating layer on the light-emitting functional layer, and photoetching the second insulating layer to form a second non-injection insulating medium layer; coating a second conductive layer on the second injection-free insulating dielectric layer and photoetching to form a second carrier driving electrode; and preparing a first transmission layer on the first carrier driving electrode and the first grid regulation and control electrode, and preparing a second transmission layer on the second carrier driving electrode and the second grid regulation and control electrode. The light-emitting efficiency and the light-emitting brightness of the injection-free light-emitting device are effectively improved, and the light-emitting efficiency and the light-emitting brightness can be flexibly regulated and controlled.

Description

Technical Field

[0001] The invention relates to the field of optoelectronic display, and in particular to a preparation process of a double-gate controlled non-injection light-emitting device. Background Art

[0002] The non-injected light-emitting device is a device that sets the light-emitting layer between the insulating layers, intermittently separates electron holes from the light-emitting layer through the electric field effect, and emits light by recombining the electron holes, while the externally driven carriers are not directly injected into the light-emitting layer. In the prior art, due to the material selection of the light-emitting layer itself, the degree of separation of electrons and holes is different in the process of separating electrons and holes, including the separation travel distance of the two and the separation amount under the same separation travel distance; similarly, in the process of electron and hole recombination, under external drive, the mobility of the two when they recombine is also different; based on this, in the recombination process, there is a difference between the migration efficiency of one side and the other side, which affects the composite reflection efficiency.

[0003] How to effectively improve the separation and recombination process of charge carriers and balance the mobility of electrons and holes without significantly increasing costs, thereby improving the luminous efficiency of non-injected light-emitting devices, is an important issue that needs to be urgently addressed in the current display technology field. Therefore, gate regulation has emerged. Through gate regulation, a built-in electric field can be constructed in these non-injected light-emitting devices to achieve the regulation of carrier mobility and luminous efficiency, which helps to improve the luminous efficiency. General gate regulation is generally single-ended, but single-ended regulation is difficult to balance the adjustment of luminous efficiency and luminous brightness, so it is not flexible enough. Summary of the invention

[0004] In view of the above-mentioned defects of the prior art, the technical problem to be solved by the present invention is to provide a dual-gate controlled non-injection light-emitting device preparation process, aiming to effectively improve the luminous efficiency and luminous brightness of the non-injection light-emitting device, and to flexibly control the two.

[0005] To achieve the above object, the present invention provides a dual-gate controlled non-injection light-emitting device preparation process, the process comprising:

[0006] Step S1, coating a first conductive layer on a substrate, and performing photolithography on the first conductive layer to form a first carrier driving electrode, a first gate regulating electrode, and a second gate regulating electrode;

[0007] Step S2, coating a first insulating layer on the first carrier driving electrode, and performing photolithography on the first insulating layer to form a first non-injected insulating dielectric layer;

[0008] Step S3: preparing a light-emitting functional layer on the first non-injected insulating dielectric layer according to the type of the light-emitting device;

[0009] Step S4, coating a second insulating layer on the light-emitting functional layer, and performing photolithography on the second insulating layer to form a second non-injected insulating dielectric layer;

[0010] Step S5, coating a second conductive layer on the second non-injected insulating dielectric layer, and performing photolithography on the second conductive layer to form a second carrier driving electrode to cover the second non-injected insulating dielectric layer;

[0011] Step S6, coating a carrier recombination layer on the first carrier driving electrode, the second carrier driving electrode, the first gate control electrode and the second gate control electrode, performing photolithography on the carrier recombination layer, forming a first transmission layer on the first carrier driving electrode and the first gate control electrode, and forming a second transmission layer on the second carrier driving electrode and the second gate control electrode; wherein the first gate control electrode is used to apply a first gate voltage relative to the first carrier driving electrode, and the first gate voltage forms a first control current between the first gate control electrode, the first transmission layer and the first carrier driving electrode, and the first control current is used to control the carrier mobility on the side of the first carrier driving electrode and thereby adjust the luminous efficiency and / or luminous brightness of the light-emitting device; the second gate control electrode is used to apply a second gate voltage relative to the second carrier driving electrode, and the second gate voltage forms a second control current between the second gate control electrode, the second transmission layer and the second carrier driving electrode, and the second control current is used to control the carrier mobility on the side of the second carrier driving electrode and thereby adjust the luminous efficiency and / or luminous brightness of the light-emitting device.

[0012] Optionally, step S6 includes:

[0013] Coating a hole material layer on the first carrier driving electrode, the second carrier driving electrode, the first gate control electrode and the second gate control electrode, performing photolithography on the hole material layer, forming a first hole transport layer on the first carrier driving electrode and the first gate control electrode, and forming a second hole transport layer on the second carrier driving electrode and the second gate control electrode;

[0014] An electronic material layer is coated on the first carrier driving electrode, the second carrier driving electrode, the first gate control electrode and the second gate control electrode, and the electronic material layer is photolithographically processed to form a first electron transport layer on the first carrier driving electrode and the first gate control electrode, and a second electron transport layer is formed on the second carrier driving electrode and the second gate control electrode; wherein the carrier recombination layer includes the hole material layer and the electronic material layer, the first transport layer includes the first hole transport layer and the first electron transport layer, and the second transport layer includes the second hole transport layer and the second electron transport layer.

[0015] Optionally, the transmission contact areas of the first hole transport layer and the first electron transport layer in the first transport layer to the first carrier driving electrode and the first gate control electrode are in a first preset ratio, so that the electron mobility and the hole mobility in the first transport layer tend to be the same; the transmission contact areas of the second hole transport layer and the second electron transport layer in the second transport layer to the second carrier driving electrode and the second gate control electrode are in a second preset ratio, so that the electron mobility and the hole mobility in the second transport layer tend to be the same.

[0016] Optionally, the light-emitting functional layer includes a quantum dot light-emitting layer or an organic light-emitting layer.

[0017] Optionally, the light-emitting functional layer is divided into an electron-type light-emitting functional layer and a hole-type light-emitting functional layer according to different carrier mobilities, the electron mobility of the electron-type light-emitting functional layer is greater than the hole mobility, and the hole mobility of the hole-type light-emitting functional layer is greater than the electron mobility.

[0018] Optionally, when the light-emitting functional layer is the electronic type light-emitting functional layer, the first carrier driving electrode is one of the electron driving electrode and the hole driving electrode, and the second carrier driving electrode is the other of the electron driving electrode and the hole driving electrode; when the light-emitting functional layer is in an energy storage state, a negative voltage is applied to the gate control electrode on the electron driving electrode side, so that the light-emitting efficiency of the light-emitting device is improved; when the light-emitting functional layer is in a composite state, a positive voltage is applied to the gate control electrode on the electron driving electrode side, so that the light-emitting efficiency of the light-emitting device is improved; when the light-emitting functional layer is in an energy storage state, a negative voltage is applied to the gate control electrode on the hole driving electrode side, so that the light-emitting efficiency and light-emitting brightness of the light-emitting device are improved; when the light-emitting functional layer is in a composite state, a positive voltage is applied to the gate control electrode on the hole driving electrode side, so that the light-emitting efficiency and light-emitting brightness of the light-emitting device are improved.

[0019] Optionally, when the light-emitting functional layer is the hole-type light-emitting functional layer, the first carrier driving electrode is one of the electron driving electrode and the hole driving electrode, and the second carrier driving electrode is the other of the electron driving electrode and the hole driving electrode; when the light-emitting functional layer is in an energy storage state, a positive voltage is applied to the gate control electrode on the electron driving electrode side, so that the light-emitting efficiency and the light-emitting brightness of the light-emitting device are improved; when the light-emitting functional layer is in a composite state, a negative voltage is applied to the gate control electrode on the electron driving electrode side, so that the light-emitting efficiency and the light-emitting brightness of the light-emitting device are improved; when the light-emitting functional layer is in an energy storage state, a positive voltage is applied to the gate control electrode on the hole driving electrode side, so that the light-emitting efficiency of the light-emitting device is improved; when the light-emitting functional layer is in a composite state, a negative voltage is applied to the gate control electrode on the hole driving electrode side, so that the light-emitting efficiency of the light-emitting device is improved.

[0020] Optionally, the light-emitting device controls the magnitude and direction of gate voltage applied to the first gate control electrode and / or the second gate control electrode according to light-emitting brightness and light-emitting efficiency adjustment requirements.

[0021] Optionally, step S3 includes:

[0022] According to the type of the light-emitting device, the film preparation is divided into one or more times to form the light-emitting functional layer.

[0023] Beneficial effects of the present invention: 1. The present invention prepares a control electrode on the non-injection light-emitting device, and controls the carrier mobility through the control electrode to control the luminous efficiency and luminous brightness, which is helpful to improve the luminous efficiency and change the luminous brightness. Compared with the prior art that requires time-consuming and labor-intensive material combination experiments, the present invention can reduce the waste of resources caused by these experimental combinations. 2. The present invention prepares gate control electrodes at both ends of the non-injection light-emitting device, and the two gate control electrodes can work separately or simultaneously to achieve separate or joint control of the luminous efficiency and luminous brightness, which increases the flexibility of control. 3. The present invention can jointly manufacture the first carrier driving electrode, the first gate control electrode and the second gate control electrode, which can effectively reduce the preparation steps, simplify the preparation process, and improve the preparation efficiency. 4. The first transport layer of the present invention includes a first hole transport layer and a first electron transport layer, and the second transport layer includes a second hole transport layer and a second electron transport layer. The first hole transport layer and the first electron transport layer in the first transport layer have a first preset ratio of transmission contact areas to the first carrier driving electrode and the first gate control electrode, so that the electron mobility and the hole mobility in the first transport layer tend to be the same; the second hole transport layer and the second electron transport layer in the second transport layer have a second preset ratio of transmission contact areas to the second carrier driving electrode and the second gate control electrode, so that the electron mobility and the hole mobility in the second transport layer tend to be the same. The present invention achieves a balance between the mobility of electrons and holes through such a mechanism preparation, and avoids the influence caused by a certain carrier mobility being too large or too small compared to another carrier in gate control.

[0024] In summary, the present invention can effectively improve the luminous efficiency and luminous brightness of the non-injection light-emitting device, and can flexibly regulate the two. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 It is a schematic diagram of a process for preparing a double-gate controlled non-injection light-emitting device provided by a specific embodiment of the present invention;

[0026] Figure 2 is a schematic structural diagram of a light emitting device provided by a specific embodiment of the present invention;

[0027] Figure 3 is a schematic diagram of changes of the light emitting device in step S1 provided in a specific embodiment of the present invention;

[0028] Figure 4 is a schematic diagram of changes of the light emitting device in step S2 provided in a specific embodiment of the present invention;

[0029] Figure 5 is a schematic diagram of changes of the light emitting device in step S3 provided in a specific embodiment of the present invention;

[0030] Figure 6 is a schematic diagram of changes in the light emitting device in step S4 provided in a specific embodiment of the present invention;

[0031] Figure 7 Schematic diagram of the change of the light emitting device in step S5 provided in a specific embodiment of the present invention

[0032] Figure 8 is a schematic diagram of changes in the light emitting device in step S6 provided in a specific embodiment of the present invention;

[0033] Fig. 9 is a schematic structural diagram of a light emitting device provided by another specific embodiment of the present invention;

[0034] Fig.10 It is a schematic diagram of carrier flow during the light-emitting process of the light-emitting device provided in the first specific embodiment of the present invention. DETAILED DESCRIPTION

[0035] The present invention discloses a dual-gate controlled injection-free light-emitting device preparation process. Those skilled in the art can refer to the content of this article and appropriately improve the technical details for implementation. It should be particularly noted that all similar replacements and modifications are obvious to those skilled in the art, and they are all deemed to be included in the present invention. The methods and applications of the present invention have been described through preferred embodiments, and relevant personnel can obviously modify or appropriately change and combine the methods and applications described herein without departing from the content, spirit and scope of the present invention to implement and apply the technology of the present invention.

[0036] The applicant has found through research that how to effectively improve the separation and recombination process of charge carriers and balance the mobility of electrons and holes without significantly increasing costs, thereby improving the luminous efficiency of non-injected light-emitting devices, is an important issue that needs to be urgently solved in the current display technology field. Therefore, gate regulation has emerged. Through gate regulation, a built-in electric field can be constructed in these non-injected light-emitting devices to achieve the regulation of carrier mobility and the regulation of luminous efficiency, which helps to improve the luminous efficiency. General gate regulation is generally single-ended, but single-ended regulation is difficult to balance the adjustment of luminous efficiency and luminous brightness, so it is not flexible enough.

[0037] Therefore, the embodiment of the present invention provides a dual-gate controlled non-injection light-emitting device preparation process, such as Figure 1 As shown, the process includes:

[0038] Step S1, coating a first conductive layer on a substrate, and performing photolithography on the first conductive layer to form a first carrier driving electrode, a first gate control electrode, and a second gate control electrode.

[0039] In this specific embodiment, the molding structure of the light emitting device can be as follows Figure 2shown. Figure 2 In the figure, 201 is a substrate, 202 is a first carrier driving electrode, and the first carrier driving electrode 202 on the left side and the first carrier driving electrode 20 on the right side are connected through an outer structure, so the two belong to the same electrode and are prepared together. 203 is a first gate control electrode, 204 is a second gate control electrode, 205 is a first non-injected insulating dielectric layer, 206 is a light-emitting functional layer, 207 is a second non-injected insulating dielectric layer, 208 is a second carrier driving electrode, 209 is a first transmission layer, and 210 is a second transmission layer.

[0040] In this specific embodiment, the light emitting device corresponding to step S1 changes as follows: Figure 3 shown.

[0041] It should be noted that the first carrier driving electrode, the first gate control electrode and the second gate control electrode can be made of the same material, so they can be prepared at the same level, effectively reducing the steps of separate preparation and improving preparation efficiency.

[0042] Step S2, coating a first insulating layer on the first carrier driving electrode, and performing photolithography on the first insulating layer to form a first non-injected insulating dielectric layer.

[0043] In this specific embodiment, the light emitting device corresponding to step S2 changes as follows: Figure 4 shown.

[0044] It should be noted that the insulating layer may be made of silicon dioxide material.

[0045] Step S3: preparing a light-emitting functional layer on the first non-injected insulating dielectric layer according to the type of the light-emitting device.

[0046] In this specific embodiment, the light emitting device corresponding to step S3 changes as follows: Figure 5 shown.

[0047] It should be noted that different light-emitting devices have different numbers of layers and materials of light-emitting functional layers. For example, the light-emitting functional layers of QLED and OLED are different.

[0048] In this specific embodiment, the light-emitting functional layer includes a quantum dot light-emitting layer or an organic light-emitting layer.

[0049] The light-emitting functional layer of QLED includes a quantum dot light-emitting layer, and the light-emitting functional layer of OLED includes an organic light-emitting layer. In this specific embodiment, step S3 includes:

[0050] According to the type of light-emitting device, the film preparation is divided into one or more times to form a light-emitting functional layer.

[0051] Step S4, coating a second insulating layer on the light-emitting functional layer, and performing photolithography on the second insulating layer to form a second non-injected insulating dielectric layer.

[0052] In this specific embodiment, the light emitting device corresponding to step S4 changes as follows: Figure 6 shown.

[0053] It should be noted that the material of the second insulating layer may be the same as the material of the first insulating layer.

[0054] Step S5, coating a second conductive layer on the second non-injected insulating dielectric layer, and performing photolithography on the second conductive layer to form a second carrier driving electrode to cover the second non-injected insulating dielectric layer.

[0055] In this specific embodiment, the light emitting device corresponding to step S5 changes as follows: Figure 7 shown.

[0056] Step S6, coating a carrier recombination layer on the first carrier driving electrode, the second carrier driving electrode, the first gate control electrode and the second gate control electrode, performing photolithography on the carrier recombination layer, forming a first transmission layer on the first carrier driving electrode and the first gate control electrode, and forming a second transmission layer on the second carrier driving electrode and the second gate control electrode.

[0057] In this specific embodiment, the light emitting device corresponding to step S6 changes as follows: Figure 8 shown.

[0058] Among them, the first gate control electrode is used to apply a first gate voltage relative to the first carrier driving electrode, the first gate voltage forms a first control current between the first gate control electrode, the first transmission layer and the first carrier driving electrode, and the first control current is used to control the carrier mobility on the side of the first carrier driving electrode and thereby adjust the luminous efficiency and / or luminous brightness of the light-emitting device; the second gate control electrode is used to apply a second gate voltage relative to the second carrier driving electrode, the second gate voltage forms a second control current between the second gate control electrode, the second transmission layer and the second carrier driving electrode, and the second control current is used to control the carrier mobility on the side of the second carrier driving electrode and thereby adjust the luminous efficiency and / or luminous brightness of the light-emitting device.

[0059] It should be noted that the gate control in the embodiment of the present invention adopts current-type gate control.

[0060] In this specific embodiment, step S6 includes:

[0061] Coating a hole material layer on the first carrier driving electrode, the second carrier driving electrode, the first gate control electrode and the second gate control electrode, performing photolithography on the hole material layer, forming a first hole transport layer on the first carrier driving electrode and the first gate control electrode, and forming a second hole transport layer on the second carrier driving electrode and the second gate control electrode;

[0062] An electronic material layer is coated on the first carrier driving electrode, the second carrier driving electrode, the first gate control electrode and the second gate control electrode, and the electronic material layer is photolithographically processed to form a first electron transport layer on the first carrier driving electrode and the first gate control electrode, and a second electron transport layer is formed on the second carrier driving electrode and the second gate control electrode; wherein the carrier recombination layer includes a hole material layer and an electron material layer, the first transport layer includes a first hole transport layer and a first electron transport layer, and the second transport layer includes a second hole transport layer and a second electron transport layer.

[0063] In this specific embodiment, the molding structure of the light emitting device can be as follows Fig. 9 shown. Fig. 9 In the figure, 201 is a substrate, 202 is a first carrier driving electrode, and the first carrier driving electrode 202 on the left side and the first carrier driving electrode 20 on the right side are connected through an outer structure, so the two belong to the same electrode and are prepared together. 203 is a first gate control electrode, 204 is a second gate control electrode, 205 is a first non-injected insulating dielectric layer, 206 is a light-emitting functional layer, 207 is a second non-injected insulating dielectric layer, 208 is a second carrier driving electrode, 211 is a first hole transport layer of the first transport layer, 212 is a second hole transport layer of the second transport layer, 213 is a first electron transport layer of the first transport layer, and 214 is a second electron transport layer of the second transport layer.

[0064] Furthermore, the transmission contact areas of the first hole transport layer and the first electron transport layer in the first transport layer to the first carrier driving electrode and the first gate control electrode are in a first preset ratio, so that the electron mobility and the hole mobility in the first transport layer tend to be the same; the transmission contact areas of the second hole transport layer and the second electron transport layer in the second transport layer to the second carrier driving electrode and the second gate control electrode are in a second preset ratio, so that the electron mobility and the hole mobility in the second transport layer tend to be the same.

[0065] It should be noted that when the two carrier mobilities tend to be the same, they are easier to control.

[0066] In this specific embodiment, the light-emitting functional layer is divided into an electron-type light-emitting functional layer and a hole-type light-emitting functional layer according to different carrier mobilities. The electron mobility of the electron-type light-emitting functional layer is greater than the hole mobility, and the hole mobility of the hole-type light-emitting functional layer is greater than the electron mobility.

[0067] In the first specific embodiment, when the light-emitting functional layer is an electronic light-emitting functional layer, the first carrier driving electrode is one of an electron driving electrode or a hole driving electrode, and the second carrier driving electrode is the other of an electron driving electrode or a hole driving electrode. When the light-emitting functional layer is in an energy storage state, a negative voltage is applied to the gate control electrode on the electron driving electrode side, so that the light-emitting efficiency of the light-emitting device is improved. When the light-emitting functional layer is in a composite state, a positive voltage is applied to the gate control electrode on the electron driving electrode side, so that the light-emitting efficiency of the light-emitting device is improved. When the light-emitting functional layer is in an energy storage state, a negative voltage is applied to the gate control electrode on the hole driving electrode side, so that the light-emitting efficiency and light-emitting brightness of the light-emitting device are improved; when the light-emitting functional layer is in a composite state, a positive voltage is applied to the gate control electrode on the hole driving electrode side, so that the light-emitting efficiency and light-emitting brightness of the light-emitting device are improved.

[0068] Among them, when the light-emitting functional layer is an electronic light-emitting functional layer, when the light-emitting functional layer is in an energy storage state, a negative voltage is applied to the gate control electrode on the hole driving electrode side, so that the light-emitting efficiency and light-emitting brightness of the light-emitting device are improved. Fig.10 As shown, in Fig.10 In the diagram, arrows represent the direction of carrier movement, carriers are represented by circles with positive and negative signs, the signs in the circles represent the types of carriers, and the number of circles represents the number of carriers. Fig.10 Just for illustration.

[0069] In the second specific embodiment, when the light-emitting functional layer is a hole-type light-emitting functional layer, the first carrier driving electrode is one of the electron driving electrode and the hole driving electrode, and the second carrier driving electrode is the other of the electron driving electrode and the hole driving electrode. When the light-emitting functional layer is in the energy storage state, the luminous efficiency and luminous brightness of the light-emitting device are improved by applying a positive voltage to the gate control electrode on the electron driving electrode side; when the light-emitting functional layer is in the composite state, the luminous efficiency and luminous brightness of the light-emitting device are improved by applying a negative voltage to the gate control electrode on the electron driving electrode side. When the light-emitting functional layer is in the energy storage state, the luminous efficiency of the light-emitting device is improved by applying a positive voltage to the gate control electrode on the hole driving electrode side; when the light-emitting functional layer is in the composite state, the luminous efficiency of the light-emitting device is improved by applying a negative voltage to the gate control electrode on the hole driving electrode side.

[0070] It should be noted that in different application scenarios, there may be a need to reduce the luminous efficiency and luminous brightness. The embodiment of the present invention can apply different gate voltages according to the needs to meet the needs. The embodiment of the present invention can work together through the double-ended gate control electrode to meet most needs in practical applications.

[0071] In this specific embodiment, the light emitting device controls the magnitude and direction of the gate voltage applied to the first gate regulating electrode and / or the second gate regulating electrode according to the requirements for adjusting the light emitting brightness and light emitting efficiency.

[0072] The embodiment of the present invention prepares a control electrode on a non-injection light-emitting device, controls the carrier mobility through the control electrode, and controls the luminous efficiency and luminous brightness, which helps to improve the luminous efficiency and change the luminous brightness. Compared with the prior art, which requires time-consuming and labor-intensive material combination experiments, the embodiment of the present invention can save resources caused by these experimental combinations.

[0073] In the embodiment of the present invention, gate control electrodes are prepared at both ends of the non-injection light-emitting device. The two gate control electrodes can work individually or simultaneously to achieve individual or joint control of the luminous efficiency and luminous brightness, thereby increasing the flexibility of control.

[0074] The embodiment of the present invention can manufacture the first carrier driving electrode, the first gate control electrode and the second gate control electrode together, which can effectively reduce the manufacturing steps, simplify the manufacturing process and improve the manufacturing efficiency.

[0075] The first transport layer of the embodiment of the present invention includes a first hole transport layer and a first electron transport layer, and the second transport layer includes a second hole transport layer and a second electron transport layer. The transmission contact area of ​​the first hole transport layer and the first electron transport layer in the first transport layer to the first carrier driving electrode and the first gate control electrode is in a first preset ratio, so that the electron mobility and the hole mobility in the first transport layer tend to be the same; the transmission contact area of ​​the second hole transport layer and the second electron transport layer in the second transport layer to the second carrier driving electrode and the second gate control electrode is in a second preset ratio, so that the electron mobility and the hole mobility in the second transport layer tend to be the same. The embodiment of the present invention is prepared through such a mechanism to achieve a balance between the mobility of electrons and holes, and avoid the influence caused by the mobility of one carrier being too large or too small compared to another carrier in gate control.

[0076] In summary, the embodiments of the present invention can effectively improve the luminous efficiency and luminous brightness of the non-injection light-emitting device, and can flexibly regulate the two.

[0077] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0078] Each embodiment in this specification is described in a related manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the system embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0079] The above are only preferred embodiments of the present invention and are not intended to limit the protection scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention are included in the protection scope of the present invention.

Claims

1. A dual-gate controlled non-injection light-emitting device preparation process, characterized in that: The process comprises: Step S1, coating a first conductive layer on a substrate, and performing photolithography on the first conductive layer to form a first carrier driving electrode, a first gate regulating electrode, and a second gate regulating electrode; Step S2, coating a first insulating layer on the first carrier driving electrode, and performing photolithography on the first insulating layer to form a first non-injected insulating dielectric layer; Step S3: preparing a light-emitting functional layer on the first non-injected insulating dielectric layer according to the type of the light-emitting device; Step S4, coating a second insulating layer on the light-emitting functional layer, and performing photolithography on the second insulating layer to form a second non-injected insulating dielectric layer; Step S5, coating a second conductive layer on the second non-injected insulating dielectric layer, and performing photolithography on the second conductive layer to form a second carrier driving electrode to cover the second non-injected insulating dielectric layer; Step S6, coating a carrier recombination layer on the first carrier driving electrode, the second carrier driving electrode, the first gate control electrode and the second gate control electrode, performing photolithography on the carrier recombination layer, forming a first transmission layer on the first carrier driving electrode and the first gate control electrode, and forming a second transmission layer on the second carrier driving electrode and the second gate control electrode; wherein the first gate control electrode is used to apply a first gate voltage relative to the first carrier driving electrode, and the first gate voltage forms a first control current between the first gate control electrode, the first transmission layer and the first carrier driving electrode, and the first control current is used to control the carrier mobility on the side of the first carrier driving electrode and thereby adjust the luminous efficiency and / or luminous brightness of the light-emitting device; the second gate control electrode is used to apply a second gate voltage relative to the second carrier driving electrode, and the second gate voltage forms a second control current between the second gate control electrode, the second transmission layer and the second carrier driving electrode, and the second control current is used to control the carrier mobility on the side of the second carrier driving electrode and thereby adjust the luminous efficiency and / or luminous brightness of the light-emitting device.

2. The dual-gate controlled non-injection light-emitting device preparation process according to claim 1, characterized in that: The step S6 comprises: Coating a hole material layer on the first carrier driving electrode, the second carrier driving electrode, the first gate control electrode and the second gate control electrode, performing photolithography on the hole material layer, forming a first hole transport layer on the first carrier driving electrode and the first gate control electrode, and forming a second hole transport layer on the second carrier driving electrode and the second gate control electrode; An electronic material layer is coated on the first carrier driving electrode, the second carrier driving electrode, the first gate control electrode and the second gate control electrode, and the electronic material layer is photolithographically processed to form a first electron transport layer on the first carrier driving electrode and the first gate control electrode, and a second electron transport layer is formed on the second carrier driving electrode and the second gate control electrode; wherein the carrier recombination layer includes the hole material layer and the electronic material layer, the first transport layer includes the first hole transport layer and the first electron transport layer, and the second transport layer includes the second hole transport layer and the second electron transport layer.

3. The dual-gate controlled non-injection light-emitting device preparation process according to claim 2, characterized in that: The transmission contact areas of the first hole transport layer and the first electron transport layer in the first transport layer to the first carrier driving electrode and the first gate control electrode are in a first preset ratio, so that the electron mobility and the hole mobility in the first transport layer tend to be the same; the transmission contact areas of the second hole transport layer and the second electron transport layer in the second transport layer to the second carrier driving electrode and the second gate control electrode are in a second preset ratio, so that the electron mobility and the hole mobility in the second transport layer tend to be the same.

4. The dual-gate controlled non-injection light-emitting device preparation process according to claim 1, characterized in that: The light-emitting functional layer includes a quantum dot light-emitting layer or an organic light-emitting layer.

5. The dual-gate controlled non-injection light-emitting device preparation process according to claim 1, characterized in that: The luminescent functional layer is divided into an electron-type luminescent functional layer and a hole-type luminescent functional layer according to different carrier mobilities. The electron mobility of the electron-type luminescent functional layer is greater than the hole mobility, and the hole mobility of the hole-type luminescent functional layer is greater than the electron mobility.

6. The dual-gate controlled non-injection light-emitting device preparation process according to claim 5, characterized in that: When the light-emitting functional layer is the electronic light-emitting functional layer, the first carrier driving electrode is one of an electron driving electrode and a hole driving electrode, and the second carrier driving electrode is the other of the electron driving electrode and the hole driving electrode; When the light-emitting functional layer is in an energy storage state, a negative voltage is applied to the gate control electrode on the electron driving electrode side, so that the light-emitting efficiency of the light-emitting device is improved; when the light-emitting functional layer is in a composite state, a positive voltage is applied to the gate control electrode on the electron driving electrode side, so that the light-emitting efficiency of the light-emitting device is improved; when the light-emitting functional layer is in an energy storage state, a negative voltage is applied to the gate control electrode on the hole driving electrode side, so that the light-emitting efficiency and light-emitting brightness of the light-emitting device are improved; When the light-emitting functional layer is in a composite state, a forward voltage is applied to the gate control electrode on the hole driving electrode side, so that the light-emitting efficiency and light-emitting brightness of the light-emitting device are improved.

7. The dual-gate controlled non-injection light-emitting device preparation process according to claim 5, characterized in that: When the light-emitting functional layer is the hole-type light-emitting functional layer, the first carrier driving electrode is one of an electron driving electrode and a hole driving electrode, and the second carrier driving electrode is the other of the electron driving electrode and the hole driving electrode; When the light-emitting functional layer is in an energy storage state, a forward voltage is applied to the gate control electrode on the electronic driving electrode side, so that the light-emitting efficiency and light-emitting brightness of the light-emitting device are improved; When the light-emitting functional layer is in a composite state, a negative voltage is applied to the gate control electrode on the electron driving electrode side, so that the light-emitting efficiency and the light-emitting brightness of the light-emitting device are improved; when the light-emitting functional layer is in an energy storage state, a positive voltage is applied to the gate control electrode on the hole driving electrode side, so that the light-emitting efficiency of the light-emitting device is improved; when the light-emitting functional layer is in a composite state, a negative voltage is applied to the gate control electrode on the hole driving electrode side, so that the light-emitting efficiency of the light-emitting device is improved.

8. The dual-gate controlled non-injection light-emitting device preparation process according to claim 1, characterized in that: The light emitting device controls the magnitude and direction of the gate voltage applied to the first gate regulating electrode and / or the second gate regulating electrode according to the requirements for adjusting the light emitting brightness and light emitting efficiency.

9. The dual-gate controlled non-injection light-emitting device preparation process according to claim 1, characterized in that: The step S3 comprises: According to the type of the light-emitting device, the film preparation is divided into one or more times to form the light-emitting functional layer.

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