System, method and application of nanosecond laser processing for preparing flexible transparent electrode

Abstract

The application relates to the field of micro-nano processing technology, in particular to a system, a method and an application for preparing a flexible transparent electrode by nanosecond laser processing, the system comprising: a laser emission module for emitting a nanosecond laser beam; a galvanometer deflection module for deflecting the nanosecond laser beam; a water bath cooling module for placing a film material, one side of the film material being in contact with water in the water bath cooling module, and the other side being etched by the deflected nanosecond laser beam; and an ultrasonic module for ultrasonic cleaning of the etched film material. The flexible transparent grid-shaped electrode is prepared by the combination of laser etching, galvanometer deflection, water bath cooling and finally ultrasonic burr removal, the transparent grid-shaped electrode has the characteristics of high conductivity, high light transmittance and excellent mechanical flexibility, and the requirement for equipment is reduced and the production cost is greatly reduced.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of micro-nano processing technology, and particularly relates to a system, method and application for preparing a flexible transparent electrode by nanosecond laser processing. BACKGROUND

[0002] As a new type of renewable energy technology, the organic solar cell has a broad application prospect due to its light weight, flexibility and relatively low manufacturing cost. In the organic solar cell, the transparent electrode is an important component, and indium tin oxide (ITO) is usually used as the transparent electrode material. However, indium tin oxide also has some disadvantages, mainly including resource scarcity and high cost, indium is a rare metal and is expensive; the brittleness of the ITO film is large, which limits its application in flexible electronic devices, and the processing of indium has certain harm to the human body and the environment.

[0003] At present, the existing cost-effective technology is to deposit a copper film on a flexible substrate by using a magnetron sputtering system to obtain a flexible copper film; then, under normal temperature conditions, a femtosecond laser is used to ablate the flexible copper film, and the moving speed of the electric displacement table is controlled by a computer-aided design system to ensure that the processed laser-ablated copper film has a suitable surface density, so as to achieve the characteristics of light transmittance and conductivity of the metal film. However, this method still has the following disadvantages: the film used is a self-magnetron sputtered copper film, which is more expensive than other cheaper metal materials; the femtosecond laser has a very short pulse time and a high peak power, and due to its high technical requirements, the price is expensive, which is not suitable for the low-cost requirements of industrial electrode preparation; in addition, during electrode processing, the laser etching can reach hundreds of meters per second, and due to the micron-scale processing precision, higher requirements are put forward for the precision and response speed of the three-axis displacement platform, further increasing the production cost.

[0004] Therefore, the prior art still needs to be improved and developed. SUMMARY

[0005] In view of the deficiencies of the prior art, the purpose of the present application is to provide a system, method and application for preparing a flexible transparent electrode by nanosecond laser processing, which aims to solve the problems of high equipment requirements and high cost in the preparation of copper film by using a femtosecond laser.

[0006] The technical scheme of the present application is as follows:

[0007] A system for preparing a flexible transparent electrode by nanosecond laser processing, comprising:

[0008] a laser emission module for emitting a nanosecond laser beam;

[0009] a galvanometer deflection module for deflecting the nanosecond laser beam;

[0010] a water bath cooling module for placing the film material, one side of the film material being in contact with water in the water bath cooling module, and the other side being etched by the deflected nanosecond laser beam;

[0011] an ultrasonic module for ultrasonic cleaning of the etched film material.

[0012] The system for preparing a flexible transparent electrode by nanosecond laser processing, wherein the laser emitting module comprises one of an infrared marking machine and an ultraviolet marking machine.

[0013] The system for preparing a flexible transparent electrode by nanosecond laser processing, wherein the galvanometer deflection module comprises an attenuator, a power meter, a mirror and a galvanometer; the nanosecond laser beam passes through the attenuator, the power meter, the mirror and the galvanometer in sequence.

[0014] The system for preparing a flexible transparent electrode by nanosecond laser processing, wherein the water bath cooling module comprises a liquid storage tank with an open side, and a pressing plate for pressing the film material and provided with an opening; the film material is placed on the open side of the liquid storage tank.

[0015] The system for preparing a flexible transparent electrode by nanosecond laser processing, wherein the system further comprises a leveling module for adjusting the film material surface to be horizontal; the water bath cooling module is arranged on the leveling module.

[0016] The system for preparing a flexible transparent electrode by nanosecond laser processing, wherein the system further comprises a control module, which is electrically connected to the laser emitting module and the galvanometer deflection module respectively, for transmitting electrical signals to the laser emitting module and the galvanometer deflection module.

[0017] The system for preparing a flexible transparent electrode by nanosecond laser processing, wherein the film material comprises a substrate and a metal film deposited on one side of the substrate; the metal film is in contact with water in the water bath cooling module; and / or the metal film is made of one of aluminum, copper, platinum and silver.

[0018] A method for preparing a flexible transparent electrode by nanosecond laser processing, comprising the steps of:

[0019] placing the film material on the water bath cooling module and adjusting the laser parameters of the laser emitting module;

[0020] emitting a nanosecond laser beam by the laser emitting module, deflecting the nanosecond laser beam by the galvanometer deflection module, and performing laser ablation on the film material to obtain a printed electrode.

[0021] Ultrasonic cleaning is performed on the printing electrode to obtain the flexible transparent electrode.

[0022] The nanosecond laser processing method for preparing the flexible transparent electrode, wherein the laser parameters include a laser processing speed, a laser power, a laser frequency, a Q pulse width, an opening light delay, a closing light delay, an ending delay, and a corner delay.

[0023] The laser processing speed is 300 mm / s-1000 mm / s, the laser power is 0.1 W-0.5 W, and the laser frequency is 50 KHz-200 KHz.

[0024] The application of the nanosecond laser processing system for preparing the flexible transparent electrode in the preparation of the flexible organic solar cell.

[0025] Beneficial effects: The application provides a nanosecond laser processing system, method and application for preparing a flexible transparent electrode, the nanosecond laser processing system for preparing the flexible transparent electrode comprises a laser emission module for emitting a nanosecond laser beam, a galvanometer deflection module for deflecting the nanosecond laser beam, a water bath cooling module for placing a film material, one side of the film material being in contact with water in the water bath cooling module, and the other side being etched by the deflected nanosecond laser beam, and an ultrasonic module for ultrasonic cleaning of the etched film material. The nanosecond laser processing system for preparing the flexible transparent electrode is composed of the laser emission module, the galvanometer deflection module, the water bath cooling module and the ultrasonic module, the flexible transparent grid-shaped electrode is prepared by the combination of the laser etching, the galvanometer deflection, the water bath cooling and the final ultrasonic deburring, the transparent grid-shaped electrode has high conductivity, high light transmittance, excellent mechanical flexibility and the like, and the requirements for the equipment are reduced and the production cost is greatly reduced. In the organic flexible solar cell, the flexible transparent electrode can serve as a low-cost flexible substrate and simultaneously function as an electrode, has the advantages of low cost, high light transmittance, low sheet resistance, lightness, no rupture under a large degree of bending and the like. BRIEF DESCRIPTION OF DRAWINGS

[0026] Figure 1 It is a structural schematic diagram of the nanosecond laser processing system for preparing the flexible transparent electrode of the application;

[0027] Figure 2 It is a partial structural schematic diagram of the nanosecond laser processing system for preparing the flexible transparent electrode of the application;

[0028] Figure 3 It is a laser bombardment principle diagram;

[0029] Figure 4 Structure diagram of the film material;

[0030] Figure 5 Structure diagram of the aluminum film in Example 1;

[0031] Figure 6 Light absorption curve of different wave bands of common metal materials;

[0032] Figure 7 Structure diagram of different paths and effects in Example 1;

[0033] Figure 8 White light interferometer topography characterization diagram of the aluminum film electrode without ultrasonic treatment in Example 2;

[0034] Figure 9 White light interferometer topography characterization diagram of the aluminum film electrode after ultrasonic treatment in Example 2;

[0035] Figure 10 AFM aluminum film line thickness scanning diagram of the aluminum film electrode before and after ultrasonic treatment in Example 2;

[0036] Figure 11 SEM comparison diagram of the aluminum film electrode before and after ultrasonic treatment in Example 2;

[0037] Figure 12 Effect diagram of the aluminum film electrode in Example 2;

[0038] Figure 13 Transmittance measurement data diagram of the aluminum film electrode in Example 2;

[0039] Figure 14 Structure diagram of the flexible organic solar cell device in Example 2;

[0040] Figure 15 CV curve diagram of the flexible organic solar cell device before calibration in Example 2. DETAILED DESCRIPTION

[0041] The present application provides a nanosecond laser processing system, method and application for preparing a flexible transparent electrode. In order to make the purpose, technical solution and effect of the present application more clear and explicit, the present application is further described in detail below. It should be understood that the specific embodiments described herein are only used to explain the present application and do not limit the present application.

[0042] Those skilled in the art will appreciate that unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art in the field of the application. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the specification and relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

[0043] As shown in Figure 1 and Figure 2 The present application provides a system for preparing a flexible transparent electrode by nanosecond laser processing, comprising:

[0044] a laser emitting module 10 for emitting a nanosecond laser beam;

[0045] a galvanometer deflection module for deflecting the nanosecond laser beam;

[0046] a water bath cooling module 20 for placing a film material 30, one side of which is in contact with water in the water bath cooling module, and the other side is etched by the deflected nanosecond laser beam;

[0047] an ultrasonic module for ultrasonic cleaning of the etched film material.

[0048] In this embodiment, a system for preparing a flexible transparent electrode by nanosecond laser processing is provided, which comprises a laser emitting module, a galvanometer deflection module, a water bath cooling module and an ultrasonic module. The transparent grid-shaped electrode is prepared by a combination of etching by the laser emitting module, galvanometer deflection, water bath cooling and finally ultrasonic deburring. The transparent grid-shaped electrode has high conductivity, high transmittance and excellent mechanical flexibility, and reduces the requirements for equipment and greatly reduces the production cost. In the organic flexible solar cell, the flexible transparent electrode can serve as a low-cost flexible substrate and also as an electrode, with the advantages of low cost, high transmittance, low sheet resistance, lightness, no breakage when bent to a large extent, etc.

[0049] Specifically, the present application uses the system to process the film material by nanosecond laser. Since the duration of the nanosecond laser processing pulse is usually between 1-100 ns, the pulse time is long enough to cause significant heat accumulation during the interaction of the laser and the material. After the material absorbs the laser energy, there is a long time for thermal effects, which causes the temperature of the material surface and its surrounding area to rise. Then, the high energy of the laser makes the metal film in the film material vaporize or ablate instantaneously, removes the metal material in these areas to obtain a flexible transparent grid-shaped electrode, and the flexible transparent grid-shaped electrode has high wire performance, high light transmittance, and excellent mechanical flexibility. At the same time, the preparation of the flexible transparent electrode using the system has the advantages of low cost and low equipment requirement, which is suitable for large-scale popularization and quantitative production.

[0050] In some embodiments, the laser emitting module comprises one of an infrared marking machine and an ultraviolet marking machine.

[0051] Specifically, the infrared marking machine can emit nanosecond laser to complete the etching of the film material. At the same time, the laser used is not limited to pulsed laser and infrared laser, and other high-energy lasers can also be used to meet the processing requirements of the occasion. For example, the ultraviolet marking device can be used to process patterned grid of materials with ultraviolet absorption, such as transparent glass.

[0052] In some embodiments, the galvanometer polarization module comprises an attenuator 41, a power meter 42, a mirror 43, and a galvanometer 44; the nanosecond laser beam passes through the attenuator 41, the power meter 42, the mirror 43, and the galvanometer 44 in sequence. The attenuator, the power meter, and the mirror are used to weaken, measure the power, and reflect the nanosecond laser beam emitted by the laser emitting module to the galvanometer in sequence. The deflection of the nanosecond laser beam is brought about by the response of the galvanometer, so that laser ablation is performed along the route designed on the computer. In this process, the position of the film material remains unchanged, thus solving the focusing problem caused by high-speed movement in processing.

[0053] Since the high energy of the laser also causes thermal deformation of the film material surface, such deformation is very unfavorable in close laser processing, and can easily cause grid misplacement or focusing misalignment. Therefore, in some embodiments, the water bath cooling module 20 comprises a liquid storage tank 21 with one side open, and a pressing plate 22 for pressing the film material 30 and provided with an opening; the film material 30 is placed on the open side of the liquid storage tank 21. The water bath cooling module can alleviate the thermal deformation of the film material processing and improve the focusing leveling problem. The liquid level in the liquid storage tank contacts the film material through the open upper end of the liquid storage tank, and the pressing plate opening facilitates the laser bombardment on the film material surface and serves to fix the film material.

[0054] The film plane level is important for laser processing. If the film is not flat relative to the laser, it is easy to cause grid defects in the grid processing. The laser bombardment principle diagram is shown in Figure 3 Therefore, in some embodiments, as shown in Figure 2 The leveling module 50 is used to adjust the film surface to be horizontal. The water bath cooling module is arranged on the leveling module. The leveling module can ensure that the film surface is horizontal.

[0055] Specifically, after adjusting the laser parameters, designing the path, and aligning the focal length, the film can be processed. First, deionized water is added to the liquid storage tank, and then the film is placed with one side down on the liquid surface of the liquid storage tank, ensuring that the liquid surface submerges one side of the film. The purpose of this is to avoid secondary pollution by allowing the debris generated by laser bombardment to sink into the water.

[0056] In some embodiments, the system for preparing a flexible transparent electrode by nanosecond laser processing further comprises a control module 60 electrically connected to the laser emission module and the galvanometer polarization module, for transmitting electrical signals to the laser emission module and the galvanometer polarization module. The control module is used to control the laser emission module and the galvanometer polarization module. By setting the laser parameters and ablation path in the control module, the laser emission module can emit nanosecond laser beams according to the laser parameters, and the galvanometer polarization module can deflect the nanosecond laser beams according to the ablation path.

[0057] In some embodiments, as shown in Figure 4 The film 30 comprises a substrate 31 and a metal film 32 deposited on one side of the substrate 31. The metal film is in contact with the water in the water bath cooling module. The material of the metal film is selected from one of aluminum, copper, platinum, and silver. This laser processing method is suitable for metal thin films of different materials. For metal thin films, it is suitable for aluminum, copper, platinum, silver, and other materials. By adjusting the processing route, laser power, pulse width, and other parameters, good processing results can be achieved. For non-metal thin films, suitable absorbing materials can also be used for patterning processing, such as patterning preparation on PEDOT thin films, or using laser processing to remove the conductive layer.

[0058] In some embodiments, the substrate is a PET film.

[0059] In some embodiments, the film material is composed of a PET layer and an aluminum metal layer deposited on one side of the PET layer; the thickness of the aluminum metal layer is 60-90 nm, and the thickness of the PET layer is 60-80 μm. Experiments have verified that the system has good processing effect on the same type of metal material at different thicknesses. Moreover, since the PET material is a transparent material and does not absorb infrared laser, the grid-like aluminum film on the substrate can be prepared by using the system.

[0060] In a preferred embodiment, the thickness of the aluminum metal layer is 80 nm, and the thickness of the PET layer is 80 μm.

[0061] In addition, the application further provides a method for preparing a flexible transparent electrode by nanosecond laser processing, comprising the following steps:

[0062] Step S10: placing the film material on a water bath cooling module and adjusting the laser parameters of a laser emission module;

[0063] Step S20: emitting a nanosecond laser beam by using the laser emission module and deflecting the laser beam by a galvanometer polarization module to perform laser ablation on the film material, so as to obtain a printed electrode;

[0064] Step S30: performing ultrasonic cleaning on the printed electrode, so as to obtain a flexible transparent electrode.

[0065] In the embodiment, the method for preparing a flexible transparent electrode by nanosecond laser processing has strong robustness, has good processing effect on metal thin films, and can increase the transmittance to prepare a flexible transparent electrode with lower cost under the condition of ensuring a smaller square resistance.

[0066] Specifically, the flexible transparent grid-like electrode is prepared by combining laser etching, galvanometer polarization, water bath cooling, and finally ultrasonic deburring, and has high conductivity, high light transmittance, excellent mechanical flexibility, and the like, and reduces the requirements for equipment and greatly reduces the production cost. Moreover, in the organic flexible solar cell, the flexible transparent electrode can serve as a low-cost flexible substrate and simultaneously function as an electrode, has the advantages of low cost, high light transmittance, low square resistance, light weight, no rupture under a large degree of bending, and the like.

[0067] In some embodiments, the laser parameters include a laser processing speed, a laser power, a laser frequency, a Q pulse width, an on-light delay, an off-light delay, an end delay, and a corner delay; wherein the laser processing speed is 300 mm / s-1000 mm / s, the laser power is 0.1 W-0.5 W, the laser frequency is 50 KHz-200 KHz, and the Q pulse width is 10 ns-30 ns.

[0068] Specifically, increasing the processing speed of the laser will reduce the local laser action time, and the ablation will be weakened. Taking the processing of an aluminum film with a thickness of 80 nm as an example, the effect is best when the laser processing speed is controlled between 300 mm / s and 1000 mm / s. Increasing the laser power will increase the peak power density of the laser, thereby expanding the ablation range of the laser. Since the aluminum film is relatively soft, the laser power is adjusted as low as possible, and is set to within 5% of the laser power, and the laser power is about 0.1-0.5 W. Adjusting the frequency and pulse width will affect the action time of the laser, and in turn affect the marking quality. In the processing process, the most suitable parameter range is 50-200 KHz in frequency, and the Q pulse width is 10-30 ns, which ensures that the laser processing has a suitable action time. At the same time, the start delay, the light-off delay, the end delay and the corner delay determine the marking situation during the start, end and turning process. It will affect the edge position of each independent unit. When processing different patterns, the light-on delay, light-off delay, end delay and corner delay need to be adjusted according to the needs.

[0069] In some embodiments, a line is directly marked on the substrate, and the size of the ablation radius is determined by measuring the line width.

[0070] The design of the processing path will directly affect the processing quality of the aluminum film, and will have a great influence on burrs, single unit shape regularity, and damage to the transparent PET substrate. Since the aluminum electrode is formed by ablation, it is necessary to ensure that the path designed according to the route can cover the area that needs to be ablated in the grid. Specifically, using different processing paths will have a great influence on the local thermal influence zone, processing burrs and transmittance. The present embodiment adopts a spiral line path or a concentric circle path to complete the ablation of the film material. Preferably, the concentric circle path is used to complete the ablation of the film material, and its effect is better than that of the spiral line path.

[0071] In addition, the application also provides a system for preparing a flexible transparent electrode by nanosecond laser processing, and the application of the system in the preparation of a flexible organic solar cell.

[0072] The following examples are further used to illustrate the present application. It should also be understood that the following examples are only used to further illustrate the present application, and cannot be understood as limiting the scope of protection of the present application. Some non-essential improvements and adjustments made by those skilled in the art based on the above content of the present application all belong to the protection scope of the present application.

[0073] Example 1

[0074] In this embodiment, an aluminum film prepared by using a magnetron sputtering technology is directly purchased through online shopping for processing, such as Figure 5As shown, it consists of a 80 μm thick transparent PET layer and an 80 nm thick aluminum film deposited on the transparent PET layer. The price of this aluminum film is 13 yuan / m 2 , further reducing the material cost; and as Figure 6 shown in the common metal material different waveband light absorption curve, the absorption rate of aluminum to sunlight is 10%, which is the lowest among common metal materials, so from the perspective of promoting secondary absorption of incident light by reflecting incident light, aluminum is the best material.

[0075] The etching of the aluminum film in this embodiment uses an infrared marking machine for cutting. The laser emission module used in this embodiment is an infrared pulsed fiber laser, which has the feature of frequency-independent adjustment. It can still maintain a high stable peak power output under the condition of changing the frequency. In the experimental process, the infrared laser used in this embodiment has a center waveband of 1064 nm, a pulse width of 200 ns, and a frequency adjustable range of 1-600 kHz.

[0076] In the processing process of this embodiment, the processing speed is set to 800 mm / s, the power of the laser is 0.2 W, the frequency of the laser is 90 KHz, the Q pulse width is 13 ns, the light-on delay is -150 μs, the light-off delay is 150 μs, the end delay is 50 μs, and the corner delay is 100 μs. Different paths are used for ablation of the aluminum film to obtain a printed electrode.

[0077] As shown in Figure 7 , compared with the concentric circular path, this embodiment uses a closed spiral path. Under the same parameters, the ablation effect of the concentric circular path is obviously better than that of the spiral line.

[0078] Embodiment 2

[0079] Before using the printed electrode obtained by ablation using the concentric circular path in embodiment 1 to make a flexible organic solar cell, the problem of metal burrs needs to be solved. When the laser bombards, the laser pulse irradiates the metal film, which generates high temperature. However, since the pulse duration is extremely short, the heat does not have enough time to diffuse to the surrounding area. Thus, a very local heat affected zone is formed. In the heat affected zone, the high energy of the laser will cause the metal film to vaporize or ablate instantaneously, but at the same time, the material ablation edge will leave a section of the turned-up metal burr. Usually, polishing and other methods are used in industry to remove metal burrs. However, the thickness of the aluminum part of the aluminum film is only 80 nm, which is extremely easy to fall off. In the actual experimental process, the aluminum electrode after laser processing is cleaned by an ultrasonic cleaner (deionized water, ultrasonic cleaning for 2 h, and room temperature), so as to remove the edge burrs.

[0080] In this embodiment, during the preparation of a 150μm square mesh (10μm linewidth), the processed mesh was first observed using a white light interferometer. It showed numerous debris and burrs, as illustrated in the white light interferometer morphology diagram. Figure 8 As shown. The processed aluminum film was then subjected to ultrasonic treatment to obtain an aluminum film electrode, the morphology of which is characterized by white light interferometry, as shown in the figure. Figure 9 As shown, the line width was measured using AFM two hours later. Figure 10 As shown, it is a scanned image of the thickness of the aluminum film in the AFM system. Through characterization, as... Figure 11 As shown, it can be clearly seen that the burrs are removed after being subjected to ultrasound.

[0081] The performance of the aluminum film electrode was tested, primarily its transmittance and sheet resistance. Transmittance directly affects the amount of photons absorbed by the active layer of an organic solar cell; high transmittance is beneficial for improving its photoelectric conversion efficiency. Sheet resistance reflects the conductivity of the material; better conductivity results in lower current loss during transmission. The aluminum film electrode fabricated in this embodiment is shown in the following figure. Figure 12 As shown, the transmittance of the aluminum film electrode is approximately 80% (e.g., Figure 13 As shown, the transmittance of the aluminum film electrode was measured using a UV spectrophotometer; its sheet resistance was found to be <10 ohms / square. Since the aluminum film used in this embodiment is 80 nm thick, its transmittance is relatively low. If the aluminum film thickness can be further reduced, the transmittance of the thin-film electrode will be further improved.

[0082] Using an aluminum film electrode (Al Film) prepared by this method as the bottom electrode, a flexible organic solar cell device with the specific structure PET / Al Film / PH1000 / PEDOT:PSS 4083 / D18:Y6 / PNDIT-F3N / Ag was fabricated. Figure 14 As shown in the figure. Al film and PH1000 serve as the transparent anode to receive holes, while PH1000 and PEDOT:PSS 4083 form the hole transport layer. D18 acts as the donor, and Y6 as the acceptor, together forming the active layer, which can be fabricated using electrostatic spraying. The electron transport layer uses PNDIT-F3N, and Ag acts as the cathode to accept electrons. Characterization showed that this flexible organic solar cell device ultimately achieved a PCE of 11.13%. The uncalibrated CV curve is shown in the figure. Figure 15 As shown in Table 1, the test results of the highest efficiency devices in the same batch are compared.

[0083] Table 1

[0084]

[0085] In summary, the application provides a system, method and application of nanosecond laser processing preparation of flexible transparent electrode, the system of nanosecond laser processing preparation of flexible transparent electrode, comprising: laser emission module, for emitting nanosecond laser beam; galvanometer deflection module, for deflection of the nanosecond laser beam; water bath cooling module, for placing film material, and the film material is contacted with water in the water bath cooling module on one side, the other side is etched by deflected nanosecond laser beam; ultrasonic module, for ultrasonic cleaning of the film material after etching. The application provides a system of nanosecond laser processing preparation of flexible transparent electrode composed of laser emission module, galvanometer deflection module, water bath cooling module and ultrasonic module, the transparent grid electrode is prepared by the combination of etching, galvanometer deflection, water bath cooling and finally ultrasonic deburring of laser emission module, which has high conductivity, high transmittance and excellent mechanical flexibility, and reduces the requirements for equipment and greatly reduces the production cost. Moreover, in the organic flexible solar cell, the flexible transparent electrode can serve as a low-cost flexible substrate and also as an electrode, having the advantages of low cost, high transmittance, low sheet resistance, lightness, no breakage when bending to a large extent and the like.

[0086] It should be understood that the application is not limited to the above examples, and those skilled in the art can make improvements or changes according to the above description, and all these improvements and changes shall fall within the protection scope of the appended claims of the application.

Claims

1. A system for fabricating a flexible transparent electrode by nanosecond laser processing, characterized by, The system comprises: a laser emission module for emitting a nanosecond laser beam; the laser parameters of the laser beam include laser processing speed, laser power, laser frequency, Q pulse width, light-on delay, light-off delay, end delay and corner delay; wherein the laser processing speed is 300 mm / s-1000 mm / s, the laser power is 0.1 W-0.5 W, the laser frequency is 50 KHz-200 KHz, and the Q pulse width is 10 ns-30 ns; a galvanometer deflection module for deflecting the nanosecond laser beam; a water bath cooling module for placing a film material, one side of the film material being in contact with water in the water bath cooling module, and the other side being etched by the deflected nanosecond laser beam; the water bath cooling module comprises a liquid storage tank with one side open, and a pressing plate for pressing the film material and provided with an opening; the film material is placed on the open side of the liquid storage tank; an ultrasonic module for ultrasonic cleaning of the etched film material; the system for preparing a flexible transparent electrode by nanosecond laser processing further comprises a leveling module for adjusting the film material surface to be horizontal; the water bath cooling module is arranged on the leveling module; the flexible transparent electrode is grid-shaped.

2. The system for fabricating a flexible transparent electrode by nanosecond laser processing according to claim 1, wherein The laser emission module comprises one of an infrared marking machine and an ultraviolet marking machine.

3. The system for fabricating a flexible transparent electrode by nanosecond laser processing according to claim 1, wherein The galvanometer deflection module comprises an attenuator, a power meter, a mirror and a galvanometer; the nanosecond laser beam passes through the attenuator, the power meter, the mirror and the galvanometer in sequence.

4. The system for fabricating a flexible transparent electrode by nanosecond laser processing according to claim 1, wherein The system for preparing a flexible transparent electrode by nanosecond laser processing further comprises a control module, which is electrically connected to the laser emission module and the galvanometer deflection module respectively, for transmitting electrical signals to the laser emission module and the galvanometer deflection module.

5. The system for fabricating a flexible transparent electrode by nanosecond laser processing according to claim 1, wherein The film material comprises a substrate and a metal film deposited on one side of the substrate; the metal film is in contact with water in the water bath cooling module; and / or the metal film is made of one of aluminum, copper, platinum and silver.

6. A method of fabricating a flexible transparent electrode by nanosecond laser processing based on the system according to any one of claims 1 to 5, characterized in that, The system comprises the following steps: placing a film material on the water bath cooling module and adjusting the laser parameters of the laser emission module; emitting a nanosecond laser beam by the laser emission module, deflecting the nanosecond laser beam by the galvanometer deflection module, and performing laser ablation on the film material to obtain a printed electrode; ultrasonic cleaning the printed electrode to obtain a flexible transparent electrode.

7. Use of the system for preparing a flexible transparent electrode by nanosecond laser processing according to any one of claims 1-5 in the preparation of a flexible organic solar cell.

Images