Deposition mask for OLED pixel deposition

Abstract

A deposition mask according to an embodiment includes: a metal plate including a deposition region and a non-deposition region, in which the deposition region includes at least one active region and a non-active region, the active region includes a plurality of through-holes, and the through-holes include small surface holes formed on a first surface of the metal plate; a large surface hole formed on the second surface of the metal plate; and a communicating portion communicating the small surface hole and the large surface hole. The inactive area includes a plurality of grooves.

Description

Technical Field

[0001] Embodiments relate to deposition masks for OLED pixel deposition. Background Art

[0002] Display devices are applied to various devices. For example, display devices are applied to small devices such as smart phones or tablet computers. Alternatively, display devices are applied to large devices such as televisions, monitors or public displays (PDs). Recently, the demand for ultra-high definition (UHD) with a resolution of 500 PPI (pixels per inch) or higher is increasing. Therefore, display devices with high resolution are being applied to small devices and large devices.

[0003] Display devices are classified into LCDs (Liquid Crystal Displays) and OLEDs (Organic Light Emitting Diodes) according to driving methods.

[0004] LCD is a display device driven by liquid crystal, while OLED is a display device driven by organic matter.

[0005] OLED can achieve infinite contrast, has a response speed 1000 times faster than LCD, and has excellent viewing angle. Therefore, OLED has attracted attention as a display device that can replace LCD.

[0006] The OLED includes a light-emitting layer. The light-emitting layer includes an organic material. The organic material is deposited on a substrate through a deposition mask. The deposition mask may include an opening mask (OM) or a fine metal mask (FMM). A deposition pattern corresponding to the pattern formed in the deposition mask is formed on the substrate. Therefore, the deposition pattern can be used as a pixel.

[0007] An open mask is a thin plate that forms a deposition pattern only at specific locations when manufacturing OLEDs. During the display manufacturing process, after the backplane is completed, an open mask is used in the deposition process to form a light-emitting layer thereon. In other words, an open mask is a mask that does not have a coverage area within the range where the display operates in order to deposit the entire surface of the display. Therefore, an open mask is used when depositing a light-emitting layer having a light-emitting material of one color.

[0008] On the other hand, the fine metal mask is used to change the color of the sub-pixel of the light-emitting layer. Therefore, the fine metal mask includes ultra-fine holes. The process using the fine metal mask must perform several deposition stages. Therefore, the process requires precise alignment. Therefore, the process using the fine metal mask is more difficult than the process using the opening mask.

[0009] When the light-emitting layer of the OLED is deposited through an open mask, only one color light-emitting layer is formed. Therefore, a separate color filter (C / F) is required to achieve various colors. On the other hand, when a fine metal mask is used, an RGB light-emitting layer can be formed. Therefore, no separate color filter is required. In other words, the technology using a fine metal mask is more difficult. However, unlike the method using an open mask, the method using a fine metal mask is more light efficient because the method using a fine metal mask does not require a filter to block light.

[0010] Fine metal mask is usually made of Invar metal plate containing iron (Fe) and nickel (Ni). Through hole is formed on one surface and another surface of metal plate, and penetrates one surface and another surface. Through hole is formed at the position corresponding to pixel pattern. Therefore, red, green and blue organic materials can pass through the through hole of metal plate and be deposited on substrate. Thus, pixel pattern can be formed on substrate.

[0011] Meanwhile, the fine metal mask includes small-area holes formed on one surface of the metal plate and large-area holes formed on the other surface of the metal plate. The small-area holes and the large-area holes are connected by a connecting portion to form a through hole.

[0012] The fine metal mask is formed in a rod shape and a plurality of fine metal masks are fixed to the deposition substrate through a frame.

[0013] At this time, the fine metal mask may be stretched in the longitudinal direction. Therefore, the stress difference caused by the tension may appear in the width direction of the mask. The warping of the fine metal mask may occur due to the stress difference. Therefore, the deposition efficiency of the TKIDRL fine metal mask may be reduced.

[0014] Therefore, there is a need for a deposition mask having a new structure capable of solving the above-mentioned problems and a method of manufacturing the same. Summary of the invention

[0015] Technical issues

[0016] Embodiments provide a deposition mask for OLED pixel deposition with improved deposition efficiency.

[0017] Technical Solutions

[0018] According to an embodiment, a deposition mask includes a metal plate, the metal plate including a deposition area and a non-deposition area, wherein the deposition area includes at least one effective area and at least one invalid area, wherein the effective area includes a plurality of through holes, wherein the through holes include small-area holes formed on a first surface of the metal plate; large-area holes formed on a second surface of the metal plate; and connecting portions connecting the small-area holes and the large-area holes, and wherein the invalid area includes a plurality of grooves.

[0019] Beneficial effects

[0020] The deposition mask according to the embodiment includes an effective area and an ineffective area. A pattern is formed in the effective area and the ineffective area. The pattern is formed as a hole or a groove.

[0021] Therefore, the stress difference generated when the deposition mask is tensioned is reduced. When the deposition mask is tensioned, stress due to tension is generated. This stress exists inside the deposition mask as residual stress. The central area in the width direction of the deposition mask is an effective area in which a through hole is formed. In addition, no through hole is formed in the outer area in the width direction (the end area in the width direction of the deposition mask). Therefore, the stress difference of the deposition mask is mainly generated in the width direction of the deposition mask.

[0022] The deposition mask includes a groove formed in the ineffective area. Therefore, the magnitude of the residual stress in the effective area can be reduced. Therefore, the residual stress difference between the effective area and the ineffective area is reduced.

[0023] Therefore, the deposition mask can be prevented from being warped due to the residual stress difference.

[0024] In addition, the strength difference between the first surface and the second surface of the deposition mask can be reduced. Specifically, a groove is additionally formed in the ineffective area of ​​the first surface where the small-area hole is formed. Therefore, the difference between the aperture ratio of the first surface and the aperture ratio of the second surface can be reduced. Therefore, the strength difference between the first surface and the second surface can be reduced.

[0025] Therefore, the deposition mask can be prevented from being warped due to a strength difference. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 is a diagram illustrating a combination of a deposition mask and a frame according to an embodiment.

[0027] Figure 2 is a cross-sectional view of an organic deposition apparatus including a deposition mask according to an embodiment.

[0028] Figure 3 is a diagram illustrating forming a deposition pattern on a deposition substrate through a through hole of a deposition mask according to an embodiment.

[0029] Figure 4 is a diagram illustrating that a deposition mask is tensioned to be fixed on a mask frame according to an embodiment.

[0030] Figure 5 is a plan view of a deposition mask according to an embodiment.

[0031] Figure 6 and Figure 7 yes Figure 5 Magnified view of area A.

[0032] Figure 8 yes Figure 7 Magnified view of area B. DETAILED DESCRIPTION

[0033] Hereinafter, the embodiments will be described in detail with reference to the accompanying drawings. However, the spirit and scope of the present invention are not limited to the parts of the described embodiments, and can be implemented in various other forms, and in the spirit and scope of the present invention, one or more of the elements of the embodiments can be selectively combined and replaced. In addition, unless otherwise explicitly defined and described, the terms (including technical terms and scientific terms) used in the embodiments of the present invention can be interpreted as having the same meaning as that commonly understood by ordinary technicians in the field to which the present invention belongs, and terms such as those defined in commonly used dictionaries can be interpreted as having a meaning consistent with its meaning in the context of the relevant field.

[0034] In addition, the terms used in the embodiments of the present invention are used to describe the embodiments and are not intended to limit the present invention. In this specification, unless otherwise specified in a phrase, a singular form may also include a plural form, and when described as "at least one (or more) of A (and), B and C", at least one of all combinations that can be combined with A, B and C may be included.

[0035] In addition, when describing the elements of the embodiments of the present invention, terms such as first, second, A, B, (a), and (b) may be used. These terms are only used to distinguish an element from other elements, and these terms are not limited to the nature, order, or sequence of the elements.

[0036] In addition, when an element is described as being “connected,” “coupled” or “coupled” to another element, it may include not only the case where the element is directly “connected,” “coupled” or “coupled” to other elements, but also the case where the element is “connected,” “coupled” or “coupled” to the other elements through another element between the element and the other elements.

[0037] In addition, when described as being formed or arranged “on (above)” or “under (below)” each element, “on (above)” or “under (below)” may include not only the case where two elements are directly connected to each other, but also the case where one or more other elements are formed or arranged between the two elements.

[0038] Furthermore, when expressed as “upper” or “lower”, not only a direction based on the upper side of an element but also a direction based on the lower side of an element may be included.

[0039] Hereinafter, a deposition mask according to an embodiment will be described with reference to the accompanying drawings.

[0040] The deposition mask described below is a fine metal mask (FMM) capable of depositing red, green and blue organic materials on a deposition substrate to form an RGB pixel pattern on the deposition substrate. In addition, the following description does not apply to an opening mask (OM).

[0041] Figures 1 to 3 1 is a diagram for explaining a process of depositing an organic material on a deposition substrate 300 using a deposition mask 100 according to an embodiment.

[0042] Figure 1 is a diagram showing a combination of a deposition mask and a frame according to an embodiment, Figure 2 is a cross-sectional view of an organic deposition apparatus including a deposition mask according to an embodiment, and Figure 3 is a diagram illustrating forming a deposition pattern on a deposition substrate through a through hole of a deposition mask according to an embodiment.

[0043] Reference Figure 1 and Figure 2 , the organic material deposition apparatus includes a deposition mask 100 , a mask frame 200 , a deposition substrate 300 , an organic material deposition container 400 , and a vacuum chamber 500 .

[0044] The deposition mask 100 includes a metal. For example, the deposition mask includes iron (Fe) and nickel (Ni). Specifically, the deposition mask includes Invar alloy, which includes iron (Fe) and nickel (Ni).

[0045] The deposition mask 100 includes a plurality of through holes TH. The through holes are arranged in the effective portion. The through holes are arranged to correspond to a pixel pattern to be formed on the deposition substrate. The deposition mask 100 includes an ineffective portion except for the effective portion including the deposition area.

[0046] The mask frame 200 includes an opening 205. A plurality of through holes are arranged on a region corresponding to the opening 205. Thus, the organic material supplied to the organic material deposition container 400 is deposited on the deposition substrate 300. The deposition mask 100 is arranged and fixed on the mask frame 200. For example, the deposition mask 100 is tensioned with a constant tension. In addition, the deposition mask 100 is welded and fixed on the mask frame 200.

[0047] For example, the ineffective portion of the deposition mask 100 is welded. Thus, the deposition mask 100 is fixed on the mask frame 200. Then, the outwardly protruding portion of the mask frame 200 is cut and removed.

[0048] The mask frame 200 includes metal having high rigidity, thereby reducing deformation of the mask frame during the welding process.

[0049] The deposition substrate 300 is a substrate used when manufacturing a display device. For example, an OLED pixel pattern is formed on the deposition substrate 300. In order to form pixels as the three primary colors of light, organic patterns of red, green, and blue are formed on the deposition substrate 300. That is, an RGB pattern is formed on the deposition substrate 300.

[0050] The organic deposition container 400 is a crucible. The organic material is disposed inside the crucible. The organic material deposition container 400 moves within the vacuum chamber 500. That is, the organic material deposition container 400 moves in one direction within the vacuum chamber 500. For example, the organic material deposition container 400 moves in the width direction of the deposition mask 100 within the vacuum chamber 500.

[0051] A heat source and / or an electric current is supplied to the organic material deposition container 400. Thus, the organic material is deposited on the deposition substrate 300.

[0052] Reference Figure 3 , the deposition mask 100 includes a metal plate 10. The metal plate includes a first surface 101 and a second surface 102. The first surface 101 and the second surface 102 are opposite surfaces.

[0053] The first surface 101 includes small-area holes V1. The second surface 102 includes large-area holes V2. For example, a plurality of small-area holes V1 and a plurality of large-area holes V2 are formed on the first surface 101 and the second surface 102, respectively.

[0054] In addition, the deposition mask 100 includes a through hole TH. The through hole TH is formed by a connection portion CA connecting boundaries of the small-area hole V1 and the large-area hole V2.

[0055] The width of the large-area hole V2 is greater than the width of the small-area hole V1. The width of the small-area hole V1 is measured on the first surface 101 of the deposition mask 100. The width of the large-area hole V2 is measured on the second surface 102 of the deposition mask 100.

[0056] In addition, the width of the connection portion CA has a set size. Specifically, the width of the connection portion CA may be 15 μm to 33 μm. More specifically, the width of the connection portion CA may be 19 μm to 33 μm. More specifically, the width of the connection portion CA may be 20 μm to 27 μm. If the width of the connection portion CA exceeds 33 μm, it is difficult to achieve a resolution of 500 PPI or higher. In addition, if the width of the connection portion CA is less than 15 μm, defects may occur during the deposition process.

[0057] The small-area hole V1 faces the deposition substrate 300. The small-area hole V1 is arranged close to the deposition substrate 300. Therefore, the small-area hole V1 has a shape corresponding to the deposition pattern DP.

[0058] The large-area hole V2 faces the organic material deposition container 400. Therefore, the organic material supplied from the organic material deposition container 400 can be accommodated with a wide width through the large-area hole V2. In addition, a fine pattern can be quickly formed on the deposition substrate 300 through the small-area hole V1.

[0059] Therefore, the organic material contained in the large-area hole V1 is deposited on the deposition substrate 300 through the small-area hole V1. Therefore, one of the red, green, or blue pixel patterns is formed on the deposition substrate 300. Subsequently, the above process is repeated. Therefore, all patterns of the red, green, or blue pixel patterns are formed on the deposition substrate 300.

[0060] At the same time, refer to Figure 4 , the deposition mask 100 is tensioned in one direction. Specifically, when the deposition mask 100 is fixed to the mask frame 200, the deposition mask 100 is tensioned in the first direction 1D. Specifically, the deposition mask 100 is tensioned in the longitudinal direction.

[0061] Therefore, stress generated by tension remains inside the deposition mask 100. The deposition mask 100 includes a region where a through hole is formed and a region where a through hole is not formed. Therefore, the residual stress of the region where a through hole is formed may be different from the residual stress of the region where a through hole is not formed.

[0062] Therefore, a stress difference is generated between the region where the through hole is formed and the region where the through hole is not formed. Therefore, the deposition mask may be bent at a boundary region between the region where the through hole is formed and the region where the through hole is not formed.

[0063] Therefore, the deposition efficiency of the deposition mask may be reduced.

[0064] Hereinafter, a deposition mask capable of solving the above-mentioned stress difference will be described.

[0065] Figure 5 is a plan view of a deposition mask 100 according to an embodiment.

[0066] Reference Figure 5 , the deposition mask 100 includes a deposition area DA and a non-deposition area NDA.

[0067] The deposition area DA is an area for forming a deposition pattern. The deposition area DA may be defined as an area from a point where a through hole or a hole first starts to a point where the through hole or the hole ends in a longitudinal direction of the deposition mask 100 .

[0068] The deposition area DA includes an active area AA and an inactive area UA. The active area AA is an area where the through hole TH and the island portion IS are formed. The inactive area UA is an area where the through hole TH and the island portion IS are not formed. The inactive area UA is an area where the groove G is formed. The island portion IS is an area where the metal plate 10 is not etched.

[0069] In addition, the deposition area DA includes a plurality of effective areas.

[0070] The deposition area DA includes a plurality of separation areas IA1 and IA2. The separation areas IA1 and IA2 are arranged between adjacent active areas. The separation areas IA1 and IA2 are separation areas between the plurality of active areas. The adjacent active areas can be distinguished from each other by the separation areas IA1 and IA2. In addition, one deposition mask 100 can support a plurality of active areas.

[0071] The non-deposition area NDA is an area that does not participate in deposition. The non-deposition area NDA includes frame fixing areas FA1 and FA2. The frame fixing areas FA1 and FA2 are areas for fixing the deposition mask 100 to the mask frame 200. In addition, the non-deposition area NDA may include half-etched portions HF1 and HF2 and an opening portion.

[0072] The half-etched portions HF1 and HF2 may disperse stress generated when the deposition mask 100 is strained.

[0073] In addition, the opening portion may disperse stress generated when tensioning the deposition mask 100. Therefore, deformation of the deposition mask may be reduced.

[0074] Figure 6 and Figure 7 yes Figure 5 Specifically, Figure 6 and Figure 7 is an enlarged view of the deposition area DA. Figure 6 is a diagram before forming a through hole and a groove in the deposition area DA. Figure 7 is a diagram after forming a through hole and a groove in the deposition area DA.

[0075] Reference Figure 6 , the deposition area DA includes an active area AA, an unavailable area UA and a separation area IA.

[0076] The active area AA is a region in which the through holes TH are formed. Specifically, a plurality of through holes TH are formed in the active area AA.

[0077] The active area AA includes a first active area AA1 and a second active area AA2. The second active area AA surrounds the first active area AA1. In addition, the area of ​​the first active area AA1 is larger than the area of ​​the second active area AA.

[0078] The separation area IA is a region that separates a plurality of active areas AA. Adjacent active areas AA are separated by the separation area IA. Specifically, active areas AA adjacent in the first direction 1D are separated by the separation area IA. Specifically, active areas AA adjacent in the longitudinal direction of the deposition mask 100 are separated by the separation area IA.

[0079] The unused area UA is an area in which the through hole TH is not formed. The unused area UA is arranged above and below the active area AA. The deposition mask 100 includes a first end E1 and a second end E2 in the second direction 2D. The first end E1 and the second end E2 are opposite to each other in the width direction of the deposition mask 100.

[0080] The unavailable area UA is disposed at least one of between the active area AA and the first end E1 and between the active area AA and the second end E2 .

[0081] The active area AA and the unavailable area UA have different widths. Specifically, a width W1 of the active area AA in the second direction and a width W2 of the unavailable area UA in the second direction are different.

[0082] Specifically, the width W1 of the active area AA is greater than the width W2 of the unavailable area UA. For example, the width W1 of the active area AA may be 90% or more and less than 100% of the width of the metal plate 100. Specifically, the width W1 of the active area AA may be 93% or more and less than 100% of the width of the metal plate 100. Specifically, the width W1 of the active area AA may be 95% or more and 98% of the width of the metal plate 100.

[0083] In addition, the width W2 of the unavailable area UA may be greater than 0% and less than 10% of the width of the metal plate 100. Specifically, the width W2 of the unavailable area UA may be greater than 0% and less than 5% of the width of the metal plate 100. Specifically, the width W2 of the unavailable area UA may be greater than 0% and less than or equal to 3% of the width of the metal plate 100.

[0084] Since the widths of the active area AA and the inactive area UA are set to the above ranges, the interval and size of the through hole formed inside the active area AA can be formed to a range set according to the deposition efficiency. In addition, the size of the deposition mask can be prevented from increasing due to the inactive area UA. In addition, the stress difference caused by the inactive area UA can be improved.

[0085] Reference Figure 7 , a plurality of through holes are formed in the active area AA. Specifically, a first through hole TH1 is formed in the first active area AA1. A deposition pattern may be deposited on the deposition substrate 300 through the first through hole TH1.

[0086] The second through holes TH2 are formed in the second active area AA2. The second through holes TH2 are formed in a shape that is the same as or similar to that of the first through holes TH1. In addition, the second through holes TH2 are formed in a size that is the same as or similar to that of the first through holes TH1.

[0087] The organic material may flow into the second through holes TH2 . However, the organic material flowing into the second through holes TH2 is not deposited on the deposition substrate 300 .

[0088] The second through holes TH2 may prevent etching failure of the first through holes TH1. Specifically, due to the second through holes TH2, sizes and / or intervals of the first through holes TH arranged in the first active area AA1 become uniform.

[0089] The surface of the metal plate is exposed in the separation area IA. No through hole or groove is formed in the separation area IA. That is, the separation area IA is a region where the first surface 1S is exposed. That is, the opening ratio of the separation area IA is 0%.

[0090] Therefore, the deposition mask 100 may maintain the strength of the deposition mask through the separation area IA.

[0091] A groove G is formed in the unavailable area UA. Specifically, a plurality of grooves G are formed in the unavailable area UA. The groove G is formed by etching one surface of the metal plate 10. Specifically, the groove G is formed by partially etching the first surface 1S. Therefore, the groove G penetrates the first surface 1S but does not penetrate the second surface 2S.

[0092] The groove G may be formed in the same shape as at least one of the first through hole TH1 and the second through hole TH. Alternatively, the groove G may be formed in a different shape from at least one of the first through hole TH1 and the second through hole TH2.

[0093] The size of the groove G may be different from that of at least one of the first through hole TH1 and the second through hole TH. For example, the size of the groove G may be smaller than that of at least one of the first through hole TH1 and the second through hole TH.

[0094] The pitch of the grooves G may be different from the pitch of at least one of the first through holes TH1 and the second through holes TH. For example, the pitch of the grooves G may be smaller than the pitch of at least one of the first through holes TH1 and the second through holes TH.

[0095] Therefore, even if the grooves are formed in the ineffective region without forming the through holes, the stress distribution can be effectively controlled.

[0096] The aperture ratio of the active area AA is different from the aperture ratio of the inactive area UA. Specifically, the aperture ratio of the active area AA is greater than the aperture ratio of the inactive area UA. Here, the aperture ratio of the active area AA is defined as the aperture ratio of the small area hole V1 formed on the first surface 1S. In addition, the aperture ratio of the inactive area UA is defined as the aperture ratio of the groove G formed on the first surface 1S.

[0097] The aperture ratio of the active area AA may be 5 times or more of the aperture ratio of the unavailable area UA. Specifically, the aperture ratio of the active area AA may be 7 times or more of the aperture ratio of the unavailable area UA. Specifically, the aperture ratio of the active area AA may be 10 times or more of the aperture ratio of the unavailable area UA. Specifically, the aperture ratio of the active area AA may be 5 to 15 times of the aperture ratio of the unavailable area UA.

[0098] Alternatively, the aperture ratio of the active area AA may be 20% or more of the area of ​​the deposition area DA of the metal plate. Specifically, the aperture ratio of the active area AA may be 25% or more of the area of ​​the deposition area DA of the metal plate. Specifically, the aperture ratio of the active area AA may be 20% to 40% of the area of ​​the deposition area DA of the metal plate.

[0099] Alternatively, the opening ratio of the unavailable area UA may be 10% or less of the area of ​​the deposition area DA of the metal plate. Specifically, the opening ratio of the unavailable area UA may be 5% or less of the area of ​​the deposition area DA of the metal plate. Specifically, the opening ratio of the unavailable area UA may be 2% to 4% of the area of ​​the deposition area DA of the metal plate.

[0100] Since the aperture ratios of the active area AA and the unavailable area UA are set to the above range, the organic material may be stably deposited on the deposition substrate 300 through the active area AA.

[0101] In addition, warping of the unavailable area UA can be prevented.

[0102] The deposition mask includes holes or grooves formed in the active area AA and the unactive area UA. Therefore, the stress difference generated when the deposition mask 100 is tensioned can be reduced. That is, when the deposition mask 100 is tensioned, stress due to tension is generated. This stress exists in the deposition mask as residual stress.

[0103] The deposition mask 100 includes a groove formed in the unactive area UA. Therefore, the magnitude of the residual stress of the unactive area can be reduced. Therefore, the residual stress difference between the active area AA and the unactive area UA is reduced.

[0104] Therefore, the deposition mask can be prevented from being warped due to the residual stress difference.

[0105] In addition, the strength difference between the first surface and the second surface of the deposition mask can be reduced. In particular, a groove is additionally formed on the ineffective area of ​​the first surface where the small-area hole is formed. Therefore, the difference between the aperture ratio of the first surface and the aperture ratio of the second surface is reduced.

[0106] Therefore, the strength difference between the first surface and the second surface is reduced. Therefore, the deposition mask can be prevented from being warped due to the strength difference.

[0107] Figure 8 1 is a diagram for explaining sizes and intervals of through holes TH1 and TH2 and grooves G of a deposition mask according to an embodiment.

[0108] Reference Figure 8 , a pitch P1 of the through holes TH1 and TH2 may be 50 μm to 200 μm. In addition, a width W1 of the through holes TH1 and TH2 may be 10 μm to 200 μm. In addition, a height H1 of the through holes TH1 and TH2 may be 10 μm to 200 μm.

[0109] In addition, the pitch P2 of the groove G may be less than 50% of the pitch P1 of the through holes TH1 and TH2. In addition, the width W2 of the groove G may be less than 50% of the width W1 of the through holes TH1 and TH2. In addition, the height H2 of the groove G may be less than 50% of the height H1 of the through holes TH1 and TH2.

[0110] In addition, the interval D between the through holes TH1 and TH2 and the groove G may be 50% or more of the pitch P1 of the through holes TH1 and TH2 . The interval between the through holes TH1 and TH2 and the groove G may be an interval in the longitudinal direction of the deposition mask 100 .

[0111] The sizes and intervals of the through holes TH1 and TH2 and the grooves G are formed within a set range. Therefore, the deposition mask can improve deposition efficiency through the through holes. In addition, the deposition mask can be prevented from being bent through the grooves.

[0112] The features, structures and effects described in the above embodiments are included in at least one embodiment, but are not limited to one embodiment. In addition, the features, structures and effects shown in each of the embodiments can even be combined or modified by a person skilled in the art to which the embodiments belong relative to other embodiments. Therefore, it should be understood that the contents related to such combinations and such modifications are included in the scope of the embodiments.

[0113] The above description has focused on the embodiments, but is exemplary only and does not limit the embodiments. It will be appreciated by those skilled in the art that various modifications and applications not shown above are possible without departing from the basic features of the embodiments. For example, each component specifically indicated in the embodiments may be modified and implemented. In addition, it should be understood that differences associated with such changes and applications are included within the scope of the embodiments defined in the appended claims.

Claims

1. A deposition mask, comprising: A metal plate comprising a deposition area and a non-deposition area, Wherein, the deposition area includes at least one effective area and at least one ineffective area, Wherein, the effective area includes a plurality of through holes, wherein the through hole comprises a small-area hole formed on the first surface of the metal plate; a large-area hole formed on the second surface of the metal plate; and a connecting portion connecting the small-area hole and the large-area hole, and Wherein, the ineffective area includes a plurality of grooves.

2. The deposition mask according to claim 1, wherein: The metal plate includes a first end and a second end opposite to each other in a width direction of the metal plate, and The ineffective area is disposed at least one of between the effective area and the first end and between the effective area and the second end.

3. The deposition mask according to claim 2, wherein: The active area includes a first active area and a second active area arranged to surround the first active area, wherein the first through hole is arranged in the first effective area, and Wherein, the second through hole is arranged in the second effective area.

4. The deposition mask according to claim 3, wherein: The size of the groove is smaller than that of at least one of the first through hole and the second through hole.

5. The deposition mask according to claim 3, wherein: A pitch of the grooves is smaller than a pitch of at least one of the first through holes and the second through holes.

6. The deposition mask according to claim 1, wherein: The width of the metal plate of the ineffective area in the width direction is greater than 0% of the width of the metal plate and less than or equal to 10% of the width of the metal plate.

7. The deposition mask according to claim 1, wherein: The aperture ratio of the effective area is 5 to 15 times that of the ineffective area.

8. The deposition mask according to claim 1, wherein: The opening ratio of the ineffective area is 2% to 4% of the area of ​​the deposition area of ​​the metal plate.

9. The deposition mask according to claim 1, wherein: The groove is formed on the first surface.

10. The deposition mask according to claim 1, wherein: The effective area includes a plurality of effective areas spaced apart in the longitudinal direction of the metal plate, wherein the separation region is arranged between the adjacent effective regions in the longitudinal direction of the metal plate, and The separation area exposes the first surface of the metal plate.

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