Sulfur defect CdS quantum dot as well as preparation method and application thereof

By heating the mixed solution of the sulfur source and the Cd precursor solution under an inert atmosphere, CdS quantum dots with sulfur defects were prepared, which solved the problems of easy agglomeration and low photocatalytic efficiency of cadmium sulfide quantum dots, and achieved high-efficiency photocatalytic and hydrogen evolution activity.

CN119735233APending Publication Date: 2025-04-01GANJIANG INNOVATION ACAD CHINESE ACAD OF SCI
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Patent Information

Application Number
CN202411661724.0
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-11-20
Publication Date
2025-04-01

AI Technical Summary

Technical Problem

In the prior art, cadmium sulfide (CdS) quantum dots are prone to agglomeration, and the separation efficiency of photogenerated electrons and holes is low. The rapid recombination between electrons and holes and photocorrosion phenomenon hinders the improvement of their photocatalytic efficiency.

Method used

CdS quantum dots with sulfur defects were prepared by heating a mixed solution of the sulfur source and the Cd precursor solution under an inert atmosphere, and controlling the reaction conditions such as temperature, time and cooling rate. This method simplifies the process without the need for precious metal catalysts and improves electron-hole separation efficiency by constructing sulfur defects.

Benefits of technology

The efficient preparation of sulfur-deficient CdS quantum dots is achieved, which improves its photocatalytic activity and dispersion, enhances the absorption capacity of visible light, and significantly improves the photoreforming performance and hydrogen evolution activity.

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Abstract

The invention provides a sulfur defect CdS quantum dot and a preparation method and application thereof.The preparation method of the sulfur defect CdS quantum dot comprises the steps that a sulfur source and a Cd precursor solution are mixed, and a mixed solution is obtained; under an inert atmosphere, heating the mixed solution to 100-180 DEG C, carrying out a constant temperature reaction for 0.5-3 h, cooling to 20-30 DEG C at a cooling rate of 2.5-5.5 DEG C / min, and filtering to obtain the sulfur defect CdS quantum dot, the pH value of the Cd precursor solution is greater than or equal to 10. The preparation method provided by the invention is simple in process, the sulfur defect CdS quantum dots with high catalytic activity can be obtained without precious metal catalysis, and the sulfur defect CdS quantum dots have excellent light reforming performance and hydrogen evolution activity on plastics.
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