A single crystal growth method based on seed crystal movement of guided mode method
By controlling the crystal lead position and movement path of seed crystal during the single crystal growth process, the problem of the lower twin band of seed crystal in the traditional guide mold method is solved, and the high quality of the crystal and single crystal integrity are achieved, which is suitable for the growth of multiple crystals.
Patent Information
- Application Number
- CN202411882214.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-19
- Publication Date
- 2025-04-01
AI Technical Summary
In the traditional mold guide method, due to improper control of the growth mode and position of the seed crystal, significant twin bands are often formed at the lower part of the seed crystal, which affects the single crystal integrity and final quality of the crystal.
By controlling the crystal lead position of the seed crystal during the growth of single crystals and accurately controlling the movement path and speed of the seed crystal, the twin band at the lower part of the seed crystal is moved to the edge of the crystal to ensure that the single crystal area on one side is equal to the mold.
It effectively improves the area of the twinless region, ensures the high quality and integrity of the crystal, is suitable for the growth of different types of crystals, and improves the single crystal quality in high-end electronic devices and optoelectronic devices and other fields.
Smart Images
Figure CN119736709A_ABST
Abstract
Description
Technical Field
[0001] The invention relates to the technical field of single crystal growth, and in particular to a single crystal growth method based on seed crystal movement of a guided mode method. Background Art
[0002] The guided mold method is one of the methods for artificially producing single crystal materials from the melt. It is to place a mold with a capillary slit in the melt. The melt rises to the top of the mold by capillary action, forming a thin film and spreading around. At the same time, the seed crystal guides the pull to gradually crystallize. The shape of the top of the mold can control the shape of the crystal. This method is used to shape the growth of single crystal materials and has the advantages of fast growth rate and stable solid-liquid interface.
[0003] However, in the traditional guided mold method, due to improper control of the growth mode and position of the seed crystal, a significant twin band is often formed at the bottom of the seed crystal. This twin band not only affects the single crystal integrity of the crystal, but also reduces the quality of the final crystal, limiting its application in high-end electronic devices, optoelectronic devices and other fields.
[0004] Therefore, the prior art still needs to be improved and developed. Summary of the invention
[0005] In view of the above-mentioned deficiencies in the prior art, an object of the present invention is to provide a single crystal growth method based on seed crystal movement by the guided mold method, aiming to solve the problem that the existing guided mold method will produce twin bands at the bottom of the seed crystal, which not only affects the single crystal integrity of the crystal, but also causes poor quality of the final crystal.
[0006] The technical solution of the present invention is as follows:
[0007] A single crystal growth method based on seed crystal movement of guided mode method, comprising the steps of:
[0008] First, seeding is performed at a position deviating from the middle of the mold;
[0009] Then pull the seed crystal rod upwards, so that a shoulder appears at the bottom of the seed crystal rod;
[0010] After the shoulder is released, the seed crystal rod is moved to release the shoulder. Specifically, the seed crystal rod is moved by controlling the seed crystal rod to move in a horizontal direction while the seed crystal rod is pulled upward. The horizontal direction is opposite to the direction of the shoulder release side. The moving speed of the seed crystal rod in the horizontal direction is the same as the shoulder release speed of the crystal front.
[0011] When the seed crystal rod is moved to the edge of the mold, the horizontal movement of the seed crystal rod is stopped, and the seed crystal rod is only pulled upward to complete the growth of the single crystal.
[0012] Preferably, seed crystal induction is performed at a position deviated from the middle of the mold by 5 to 10 mm.
[0013] Preferably, the speed of pulling the seed rod upward is 8-12 mm / h.
[0014] Preferably, the shoulder release speed of the crystal front is 8-11 mm / h.
[0015] Preferably, the seed rod is moved to release the shoulder, so that the twin zone extending downward along the seed rod moves to the edge of the crystal as the seed rod moves horizontally.
[0016] Preferably, the mold is a rectangular parallelepiped mold.
[0017] Preferably, the single crystal is a gallium oxide single crystal.
[0018] Beneficial effects:
[0019] The key improvement of the present invention is that during the single crystal growth process, by controlling the seed crystal seeding position and accurately controlling the moving path and speed of the seed crystal, the twinning band at the bottom of the seed crystal is moved to the edge of the crystal, and the single crystal area on one side is kept as wide as the mold as possible. This improvement avoids the twinning band being in the middle of the crystal and moves it to the edge of the crystal, thereby greatly increasing the area of the twin-free area and ensuring the high quality and integrity of the crystal.
[0020] Specifically, the seeding is first carried out at a position 5 to 10 mm away from the middle of the mold, with the aim of ensuring that the shoulder is released first on the side close to the edge of the mold, while the shoulder is not released on the other side due to the higher temperature; then, the shoulder release speed of the crystal front is calculated by combining image recognition technology (approximately 8 to 11 mm / h), and this speed is used as the speed of the seed crystal moving in the opposite direction to ensure normal growth on the side where the shoulder is released first. This strategy ensures that the twin band below the seed crystal moves to the edge of the crystal, thereby obtaining a larger area of twin-free area. In addition, this method has good adaptability and can be effectively applied to the growth of different types of crystals, ensuring the quality of crystal growth. BRIEF DESCRIPTION OF THE DRAWINGS
[0021] Figure 1 A schematic diagram of a single crystal growth method using seed crystal movement based on a guided mode method provided in an embodiment of the present invention.
[0022] Figure 2 To adopt Figure 1 Schematic diagram of the crystal shape finally grown by the method shown. DETAILED DESCRIPTION
[0023] The present invention provides a single crystal growth method based on seed crystal movement of the guided mode method. In order to make the purpose, technical solution and effect of the present invention clearer and more specific, the present invention is further described in detail below. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.
[0024] The embodiment of the present invention provides a single crystal growth method based on seed crystal movement of the guided mode method, which comprises the steps of:
[0025] First, seeding is performed at a position deviating from the middle of the mold;
[0026] Then pull the seed crystal rod upwards, so that a shoulder appears at the bottom of the seed crystal rod;
[0027] After the shoulder is released, the seed crystal rod is moved to release the shoulder. Specifically, the seed crystal rod is moved by controlling the seed crystal rod to move in a horizontal direction while the seed crystal rod is pulled upward. The horizontal direction is opposite to the direction of the shoulder release side. The moving speed of the seed crystal rod in the horizontal direction is the same as the shoulder release speed of the crystal front.
[0028] When the seed crystal rod is moved to the edge of the mold, the horizontal movement of the seed crystal rod is stopped, and the seed crystal rod is only pulled upward to complete the growth of the single crystal.
[0029] Combination Figure 1 As shown in ① to ③, the embodiment of the present invention performs seed crystal seeding at a position deviating from the middle of the mold (preferably 5mm to 10mm away from the middle of the mold), so that the shoulder can be released on one side of the seed crystal first, and the seed crystal is pulled upward (speed v) at the speed of the front edge of the shouldered crystal (speed u) to control the seed crystal to move in the opposite direction (the opposite direction to the shouldered side), so that a twin-free region can be formed on the side where the shoulder is released first. This strategy ensures that the twin band below the seed crystal moves to the edge of the crystal, thereby obtaining a larger twin-free region, see Figure 2 shown.
[0030] When the speed v of pulling the seed crystal rod upward is 8-12 mm / h, and the speed u of moving the seed crystal rod in the horizontal direction is 8-11 mm / h, the seed crystal rod actually moves obliquely upward, and the speed w of moving obliquely upward is 11-15 mm / h. Figure 1 As shown in ③.
[0031] Specifically, the embodiment of the present invention adopts a shoulder release strategy of moving the seed crystal. First, the seed crystal seeding position deviates from the mold center by 5 to 10 mm to ensure that one side of the seed crystal is shouldered first; then, the shoulder release speed of the crystal front edge is calculated in combination with image recognition technology (approximately 8 to 11 mm / h), and this speed is used as the reverse moving speed of the seed crystal to try to ensure that the shoulder release front edge is at position A when the seed crystal is started to move (see Figure 1 As shown in the figure, a stable shoulder is achieved. The shoulder is placed at a stable position at the front edge of the shoulder, which is beneficial to ensure the quality of the crystal, reduce the formation of impurity crystals and twins, and ensure the integrity of the twin-free area as much as possible. This method also has high operability and stability in large-scale production.
[0032] The single crystal of the present invention may be a single crystal grown by a guided mode method, for example, the single crystal may be a gallium oxide single crystal.
[0033] Among them, the mold used in the guided mold method is a rectangular mold.
[0034] The method of the present invention can be improved and implemented through the existing guided mold method equipment. First, there is a rod that moves in the horizontal direction above the mold, which can be accurately moved slightly by an external servo motor to ensure that the crystal growth is not affected during the movement process. Secondly, in actual operation, the seeding position and movement speed of the seed crystal need to be adjusted by a precise control system, which can be achieved by modern automation equipment. During specific implementation, it is also necessary to make appropriate adjustments according to different types of crystals to achieve the best growth effect. Experiments show that this method is not only effective in the laboratory, but can also be promoted and applied in large-scale production.
[0035] In summary, the present invention provides a single crystal growth method for seed crystal movement based on guided mode method. During the single crystal growth process, by controlling the seed crystal seeding position, and accurately controlling the moving path and speed of the seed crystal (controlling the seed crystal rod to move in the opposite direction of the shoulder side at the shoulder speed of the crystal front while pulling the seed crystal rod upward), the twin band at the bottom of the seed crystal is moved to the edge of the crystal. The technical advantages of the present invention are mainly reflected in two aspects: first, by moving the seed crystal, it is ensured that the twin crystal at the bottom of the seed crystal moves to one side of the crystal, and there is no twin crystal region on the other side of the crystal, thereby ensuring the high quality of the crystal and the integrity of the single crystal. For applications in the fields of high-end optoelectronic devices, semiconductor devices, etc., the improvement of the quality of single crystals is directly related to the performance and reliability of the devices, so the high-quality single crystals obtained by the method of the present invention can improve the performance and reliability of the devices. In addition, compared with the traditional method, the method of the present invention is highly operable in the production process, not only can it be used for single crystal growth of various types of guided mode methods, but also has good adaptability and can meet the requirements of large-scale production. Therefore, the present invention has broad market prospects and commercial value.
[0036] It should be understood that the application of the present invention is not limited to the above examples. For ordinary technicians in this field, improvements or changes can be made based on the above description. All these improvements and changes should fall within the scope of protection of the claims attached to the present invention.
Claims
1. A single crystal growth method based on seed crystal movement of guided mode method, characterized in that: Includes steps: First, seeding is performed at a position deviating from the middle of the mold; Then pull the seed crystal rod upwards, so that a shoulder appears at the bottom of the seed crystal rod; After the shoulder is released, the seed crystal rod is moved to release the shoulder. Specifically, the seed crystal rod is moved by controlling the seed crystal rod to move in a horizontal direction while the seed crystal rod is pulled upward. The horizontal direction is opposite to the direction of the shoulder release side. The moving speed of the seed crystal rod in the horizontal direction is the same as the shoulder release speed of the crystal front. When the seed crystal rod is moved to the edge of the mold, the horizontal movement of the seed crystal rod is stopped, and the seed crystal rod is pulled upward to complete the growth of the single crystal.
2. The single crystal growth method of seed crystal movement based on the guided mode method according to claim 1, characterized in that: Seeding is performed at a position 5 to 10 mm away from the center of the mold.
3. The single crystal growth method of seed crystal movement based on guided mode method according to claim 1, characterized in that: The speed of pulling the seed crystal rod upward is 8-12 mm / h.
4. The single crystal growth method based on seed crystal movement of the guided mode method according to claim 1, characterized in that: The shoulder release speed of the crystal front is 8-11 mm / h.
5. The single crystal growth method of seed crystal movement based on guided mode method according to claim 1, characterized in that: The seed rod is moved to release the shoulder, so that the twin zone extending downward along the seed rod moves to the edge of the crystal as the seed rod moves in the horizontal direction.
6. The single crystal growth method of seed crystal movement based on guided mode method according to claim 1, characterized in that: The mold is a rectangular parallelepiped mold.
7. The single crystal growth method of seed crystal movement based on guided mode method according to claim 1, characterized in that: The single crystal is a gallium oxide single crystal.