Method for regulating and controlling electrical parameters of bismuth triiodide

Abstract

The invention relates to a method for regulating and controlling electrical parameters of bismuth triiodide, which comprises the following steps of: adding a bismuth triiodide sample into a diamond anvil cell device in the diamond anvil cell device at room temperature, applying pressure to the interior of a sample cavity by using the diamond anvil cell device, and regulating and controlling the electrical parameters of the bismuth triiodide by controlling the applied pressure. According to the method for regulating and controlling the electrical parameters of the bismuth triiodide provided by the technical scheme of the invention, the electrical parameters of the bismuth triiodide are further controlled by controlling the pressure, a new direction is provided for leading-edge applications of the bismuth triiodide in sensing, detection, flexible electronics and the like, and the electrical parameters of the bismuth triiodide can be regulated and controlled. The method has important significance for expanding the functional characteristics and the application field of bismuth triiodide.

Description

Technical Field

[0001] The invention belongs to the technical field of high-voltage regulation of electrical properties, and specifically relates to a method for regulating electrical parameters of bismuth triiodide. Background Art

[0002] As an emerging wide-bandgap semiconductor material, bismuth triiodide (BiI3) has attracted widespread attention due to its unique layered structure, excellent optoelectronic properties and chemical stability. BiI3 has high light absorption efficiency, low dark current and excellent radiation resistance, and thus shows significant potential in the manufacture of X-ray detectors, photodetectors and other optoelectronic devices. In optoelectronic devices, BiI3 has the advantage of high sensitivity in the ultraviolet and visible light bands due to its bandgap of about 2.48 eV, which makes it have certain application prospects in the field of photoelectric detection and radiation detectors.

[0003] Pressure, as a thermodynamic variable independent of temperature and composition, can adjust the electrical properties by regulating the crystal structure and electronic state density of the material. In the study of BiI3, the transition of its crystal structure from rhombohedral phase to monoclinic phase was observed under pressure conditions, resulting in a gradual decrease in the band gap and possibly leading to semiconductor-metal transition. As the structure is compressed, the distance between Bi and I atoms decreases, enhancing the overlap and hybridization effect of the electron orbits, thereby changing the conductivity of the material.

[0004] This method of regulating the electrical properties of BiI3 by pressure is of great value in specific applications. First, it can be used to develop high-pressure sensors, directly correlating the electrical response of BiI3 with pressure changes to achieve precise pressure sensing. Secondly, the optoelectronic properties of BiI3 can be further optimized under high pressure and used in X-ray detection and ultraviolet detectors to improve detection accuracy and sensitivity. In addition, the semiconductor-metal transition under high pressure also gives BiI3 the potential for application in flexible electronic devices, stress sensing devices, and energy conversion devices. In short, by studying the changes in the electrical properties of BiI3 under high pressure conditions, its application range can be expanded and its performance in the field of optoelectronic devices and sensors can be further improved. Summary of the invention

[0005] The object of the present invention is to provide a method for regulating the electrical parameters of bismuth triiodide (hereinafter referred to as BiI3) in view of the deficiencies of the prior art, comprising the following steps:

[0006] S1. In a diamond anvil apparatus at room temperature, a steel sheet is pre-pressed as a gasket;

[0007] S2, adding the sample to be regulated into the diamond anvil cell device to prepare a sample cavity;

[0008] S3. Apply pressure to the interior of the sample chamber using the diamond anvil cell device, wherein the pressure inside the sample chamber is 0 to 15.4 GPa, and the electrical parameters of bismuth triiodide are regulated by controlling the applied pressure.

[0009] Furthermore, in step S3, the pressure is calibrated by using the ruby ​​fluorescence peak calibration method.

[0010] Furthermore, in step S1, the gasket is further insulated, and the specific steps are as follows:

[0011] A hole is punched at the center of the indentation of the pre-pressed gasket to form an indentation hole, and insulating powder is ground and filled into the indentation hole.

[0012] Furthermore, the insulating powder is Al2O3.

[0013] Beneficial Effects

[0014] Compared with the known public technology, the technical solution provided by the present invention has the following beneficial effects:

[0015] The present invention provides a new method for regulating the electrical parameters of bismuth triiodide. By studying the change of the electrical properties of BiI3 under high pressure, the law of the change of the electrical properties of BiI3 by pressure is obtained. By controlling the pressure, the resistivity of BiI3 is controlled, which opens up a new way for its application in flexible electronic devices, pressure-responsive sensors and energy conversion devices. Regulating the conductivity of BiI3 by high pressure helps to expand its functional characteristics and application fields. Promoting the application of this material in the emerging electronic field is of great significance for expanding the functional characteristics and application fields of BiI3. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 The present invention provides a schematic diagram of the change in conductivity of the BiI3 material with pressure under the pressure conditions of Examples 1-4.

[0017] Figure 2 The present invention provides a schematic diagram of the Van der Pauw integrated microcircuit in Examples 1-4. DETAILED DESCRIPTION

[0018] The following is a further detailed description of the implementation of the present invention in conjunction with the accompanying drawings and embodiments. It should be noted that the embodiments of the present invention and the features in the embodiments can be combined with each other without conflict. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0019] In order to achieve the effect of the present invention, the present invention is further described below in conjunction with embodiments.

[0020] Embodiment 1:

[0021] Embodiment 1 of the present invention provides a method for regulating the electrical parameters of BiI3, comprising the following steps:

[0022] S1. Assemble a diamond anvil device that generates pressure, i.e., a press, at room temperature, and level and center the assembled press. In the diamond anvil device, after pressing out a diamond anvil mark at the center of a T301 steel sheet, use the T301 steel sheet with the indentation as a gasket, and use a laser punching device to punch a hole at the same center of the gasket indentation to form an indentation hole, grind the insulating powder and fill it into the indentation hole, pressurize the insulating powder, and then punch the insulating powder to prepare a sample cavity. In the embodiment of the present invention, the insulating powder is Al2O3.

[0023] S2. Add the BiI3 sample to be regulated into the diamond anvil cell device to prepare the sample cavity.

[0024] S3. Use the diamond anvil cell device to apply pressure to the interior of the sample chamber, the pressure inside the sample chamber is 0 to 3.5 GPa, and use the Van der Pauw method to measure the electrical parameter characteristics of BiI3. This method integrates four electrodes and can achieve direct and accurate resistivity measurement. The regulation of BiI3 resistivity is achieved, that is, the regulation of BiI3 electrical parameters is achieved.

[0025] A layer of conductive metal tungsten film is deposited on the top surface of the diamond to ensure its conductivity and stability under high-voltage environment. A cross-shaped pattern is etched on the metal film using photolithography technology to form four electrode areas to achieve independent electrode connection. A layer of insulating material (aluminum oxide film) is covered on the surface of the metal film by magnetron sputtering and other technologies, and then the insulating layer of the electrode area is removed to ensure good conductive contact. The diamond is used to apply pressure to the inside of the sample chamber of the anvil device, so that the pressure inside the sample chamber varies in the range of 0 to 3.5 GPa. In this pressure range, the resistivity is measured at 0 GPa, 1.1 GPa, 2.4 GPa, and 3.5 GPa pressure points.

[0026] Embodiment 2:

[0027] Embodiment 2 of the present invention provides a method for regulating the electrical parameters of BiI3, comprising the following steps:

[0028] S1. Assemble a diamond anvil device that generates pressure, i.e., a press, at room temperature, and level and center the assembled press. In the diamond anvil device, after pressing out a diamond anvil mark at the center of a T301 steel sheet, use the T301 steel sheet with the indentation as a gasket, and use a laser punching device to punch a hole at the same center of the gasket indentation to form an indentation hole, grind the insulating powder and fill it into the indentation hole, pressurize the insulating powder, and then punch the insulating powder to prepare a sample cavity. In the embodiment of the present invention, the insulating powder is Al2O3.

[0029] S2. Add the BiI3 sample to be regulated into the diamond anvil cell device to prepare the sample cavity.

[0030] S3. Use the diamond anvil device to apply pressure to the inside of the sample chamber, the pressure inside the sample chamber is 4.8-8.3 GPa, and use the Van der Pauw method to measure the electrical parameter characteristics of BiI3. This method integrates four electrodes and can achieve direct and accurate resistivity measurement. The control of BiI3 resistivity is achieved, that is, the control of BiI3 electrical parameters is achieved.

[0031] A layer of conductive metal tungsten film is deposited on the top surface of the diamond to ensure its conductivity and stability under high-voltage environment. A cross-shaped pattern is etched on the metal film using photolithography technology to form four electrode areas to achieve independent electrode connection. A layer of insulating material (aluminum oxide film) is covered on the surface of the metal film by magnetron sputtering and other technologies, and then the insulating layer of the electrode area is removed to ensure good conductive contact. The diamond is used to apply pressure to the inside of the sample chamber of the anvil device, so that the pressure inside the sample chamber varies in the range of 4.8 to 8.3 GPa. In this pressure range, the resistivity is measured at 4.8 GPa, 5.2 GPa, 6.3 GPa, 7.2 GPa, and 8.3 GPa pressure points.

[0032] Embodiment 3:

[0033] Embodiment 3 of the present invention provides a method for regulating the electrical parameters of BiI3, comprising the following steps:

[0034] S1. Assemble a diamond anvil device that generates pressure, i.e., a press, at room temperature, and level and center the assembled press. In the diamond anvil device, after pressing out a diamond anvil mark at the center of a T301 steel sheet, use the T301 steel sheet with the indentation as a gasket, and use a laser punching device to punch a hole at the same center of the gasket indentation to form an indentation hole, grind the insulating powder and fill it into the indentation hole, pressurize the insulating powder, and then punch the insulating powder to prepare a sample cavity. In the embodiment of the present invention, the insulating powder is Al2O3.

[0035] S2. Add the BiI3 sample to be regulated into the diamond anvil cell device to prepare the sample cavity.

[0036] S3, using the diamond anvil device to apply pressure to the interior of the sample chamber, the pressure inside the sample chamber is 9.0-11.7 GPa, and using the Van der Pauw method to measure the electrical parameter characteristics of BiI3, which integrates four electrodes and can achieve direct and accurate resistivity measurement. The regulation of BiI3 resistivity is achieved, that is, the regulation of BiI3 electrical parameters is achieved.

[0037] A layer of conductive metal tungsten film is deposited on the top surface of the diamond to ensure its conductivity and stability under high-voltage environment. A cross-shaped pattern is etched on the metal film using photolithography technology to form four electrode areas to achieve independent electrode connection. A layer of insulating material (aluminum oxide film) is covered on the surface of the metal film by magnetron sputtering and other technologies, and then the insulating layer of the electrode area is removed to ensure good conductive contact. The diamond is used to apply pressure to the inside of the sample chamber of the anvil device, so that the pressure inside the sample chamber varies in the range of 9.0 to 11.7 GPa. In this pressure range, the resistivity is measured at 9.0 GPa, 10.1 GPa, and 11.7 GPa pressure points.

[0038] Embodiment 4:

[0039] Embodiment 4 of the present invention provides a method for regulating the electrical parameters of BiI3, comprising the following steps:

[0040] S1. Assemble a diamond anvil device that generates pressure, i.e., a press, at room temperature, and level and center the assembled press. In the diamond anvil device, after pressing out a diamond anvil mark at the center of a T301 steel sheet, use the T301 steel sheet with the indentation as a gasket, and use a laser punching device to punch a hole at the same center of the gasket indentation to form an indentation hole, grind the insulating powder and fill it into the indentation hole, pressurize the insulating powder, and then punch the insulating powder to prepare a sample cavity. In the embodiment of the present invention, the insulating powder is Al2O3.

[0041] S2. Add the BiI3 sample to be regulated into the diamond anvil cell device to prepare the sample cavity.

[0042] S3, using the diamond anvil device to apply pressure to the interior of the sample chamber, the pressure inside the sample chamber is 12.3-15.4 GPa, and using the Van der Pauw method to measure the electrical parameter characteristics of BiI3, which integrates four electrodes and can achieve direct and accurate resistivity measurement. The regulation of BiI3 resistivity is achieved, that is, the regulation of BiI3 electrical parameters is achieved.

[0043] A layer of conductive metal tungsten film is deposited on the top surface of the diamond to ensure its conductivity and stability under high-voltage environment. A cross-shaped pattern is etched on the metal film using photolithography technology to form four electrode areas to achieve independent electrode connection. A layer of insulating material (aluminum oxide film) is covered on the surface of the metal film by magnetron sputtering and other technologies, and then the insulating layer of the electrode area is removed to ensure good conductive contact. The diamond is used to apply pressure to the inside of the sample chamber of the anvil device, so that the pressure inside the sample chamber varies in the range of 12.3 to 15.4 GPa. In this pressure range, the resistivity is measured at 12.3 GPa, 13.6 GPa, 14.2 GPa, and 15.4 GPa pressure points.

[0044] In summary, the resistivity data measured by Examples 1-4 of the present invention are analyzed, as shown in FIG. Figure 1 As shown. Figure 1 It can be seen that the conductivity gradually increases with the increase of pressure. In the range of 0-15.4 GPa, different conductivities can be obtained by applying pressure to BiI3. This shows that by changing the pressure, the conductivity of BiI3 can be regulated, and then the electrical properties of BiI3 can be regulated. This points out new directions and ideas for the application of BiI3 in the optoelectronic field, which is of great significance for expanding the functional characteristics and application fields of BiI3.

[0045] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0046] Although the embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and cannot be understood as limiting the present invention. Those skilled in the art may change, modify, replace and modify the above embodiments within the scope of the present invention.

[0047] The above specific implementations of the present invention do not constitute a limitation on the protection scope of the present invention. Any other corresponding changes and modifications made based on the technical concept of the present invention should be included in the protection scope of the claims of the present invention.

Claims

1. A method for regulating the electrical parameters of bismuth triiodide, characterized in that: The following steps are involved: S1. In a diamond anvil apparatus at room temperature, a steel sheet is pre-pressed as a gasket; S2, adding the sample to be regulated into the diamond anvil cell device to prepare a sample cavity; S3. Apply pressure to the interior of the sample chamber using the diamond anvil cell device, wherein the pressure inside the sample chamber is 0 to 15.4 GPa, and the electrical parameters of bismuth triiodide are regulated by controlling the applied pressure.

2. The method for regulating the electrical parameters of bismuth triiodide according to claim 1, characterized in that: In step S3, the pressure is calibrated by using the ruby ​​fluorescence peak calibration method.

3. The method for regulating the electrical parameters of bismuth triiodide according to claim 1, characterized in that: In step S1, the gasket is further insulated, and the specific steps are: A hole is punched at the center of the indentation of the pre-pressed gasket to form an indentation hole, and insulating powder is ground and filled into the indentation hole.

4. The method for regulating the electrical parameters of bismuth triiodide according to claim 3, characterized in that: The insulating powder is Al2O3.

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