Method and system for testing performance of fast recovery diode based on electron irradiation

Abstract

The invention relates to the technical field of diode performance testing, in particular to a fast recovery diode performance testing method and system based on electron irradiation, and the method comprises the steps: setting a bias condition interval, obtaining a fast recovery diode set, obtaining a plurality of experimental groups, and sequentially extracting the experimental groups from the experimental groups, and executing the following operations on the extracted experiment group: initializing the test circuit to obtain an initialization circuit, irradiating a fast recovery diode in the initialization circuit, performing irradiation monitoring on the initialization circuit to obtain temperature data, voltage data and leakage current data, predicting the service life of the fast recovery diode, and performing the test on the test circuit. Acquiring a leakage current increase proportion and a leakage current curve, acquiring a visual temperature image, acquiring a voltage curve, acquiring a performance actual measurement report, and completing the fast recovery diode performance test based on electron irradiation based on the performance actual measurement report. According to the invention, the reliability and stability of the fast recovery diode in a radiation environment can be improved.

Description

Technical Field

[0001] The present invention relates to the technical field of diode performance testing, and in particular to a fast recovery diode performance testing method and system based on electron irradiation. Background Art

[0002] Electron irradiation refers to the process of irradiating a fast recovery diode with a high-energy electron beam. A fast recovery diode is a semiconductor discrete device with good switching characteristics and short reverse recovery time.

[0003] At present, the performance test methods for fast recovery diodes are mainly concentrated on conventional electrical performance tests, such as forward conduction characteristic test, reverse cutoff characteristic test, etc. These methods mainly focus on the performance of fast recovery diodes under normal working conditions, while there are relatively few studies on performance tests under radiation environments. A few existing radiation test methods have the problem of single test conditions and cannot fully simulate the actual complex radiation environment. In addition, the existing test methods lack accurate prediction of the service life of the diode in a radiation environment and a comprehensive evaluation of the use parameters. Therefore, how to improve the reliability and stability of fast recovery diodes in a radiation environment is an urgent problem to be solved. Summary of the invention

[0004] The present invention provides a fast recovery diode performance test method based on electron irradiation and a computer-readable storage medium, the main purpose of which is to improve the reliability and stability of the fast recovery diode in a radiation environment.

[0005] To achieve the above object, the present invention provides a fast recovery diode performance testing method based on electron irradiation, comprising: receiving a diode performance test instruction, and setting a bias condition interval according to the diode performance test instruction, wherein the bias condition interval includes: an ambient temperature interval and an operating voltage interval; Acquire a fast recovery diode set, and acquire multiple experimental groups based on the bias condition interval and the fast recovery diode set, wherein the fast recovery diode set includes multiple identical fast recovery diodes; Extract experimental groups from multiple experimental groups in sequence, and perform the following operations on the extracted experimental groups: Extract the fast recovery diode corresponding to the experimental group, build a test circuit according to the extracted fast recovery diode, and initialize the test circuit to obtain an initialization circuit; The pre-built electron radiation device is set using preset irradiation parameters to obtain a pre-adjusted electron radiation device, wherein the irradiation parameters include: irradiation particle type and irradiation dose gradient; Using a pre-adjusted electronic radiation device to irradiate the fast recovery diode in the initialization circuit, and perform irradiation monitoring on the initialization circuit to obtain temperature data, irradiation dose, voltage data and leakage current data; If it is confirmed that the irradiation dose is equal to the preset irradiation particle value and the fast recovery diode is not damaged or burned, the service life of the fast recovery diode is predicted; Acquire a leakage current increase ratio and a leakage current curve based on the leakage current data, acquire a visualized temperature image based on the temperature data, and acquire a voltage curve based on the voltage data; Evaluate the usage parameters of the fast recovery diode based on the visualized temperature image, service life, voltage curve and leakage current curve to obtain a unit evaluation report; Summarize the unit evaluation reports to obtain a set of unit evaluation reports corresponding to multiple experimental groups, and obtain a performance measurement report based on the set of unit evaluation reports; Complete the fast recovery diode performance test based on electron irradiation based on the performance measurement report.

[0006] Optionally, the obtaining of multiple experimental groups based on the bias condition interval and the fast recovery diode set includes: Obtain an interval division unit, and use the interval division unit to divide the ambient temperature interval and the working voltage interval in the bias condition interval into intervals to obtain a divided ambient temperature group and a divided working voltage group, wherein the divided ambient temperature group includes multiple ambient temperatures, and the divided working voltage group includes multiple working voltages; Pairing the divided ambient temperature groups and the divided working voltage groups to obtain a divided bias condition matrix, wherein the divided bias condition matrix includes: a plurality of row vectors, wherein the row vector includes: an ambient temperature and a working voltage; A plurality of experimental groups are set based on a plurality of row vectors and a fast recovery diode set in a partitioned bias condition matrix, wherein one experimental group corresponds to one fast recovery diode and one row vector.

[0007] Optionally, the acquisition interval division unit includes: Set the partition groups, and use the partition groups and the pre-built interval unit partition formula to calculate the interval partition unit. The interval unit partition formula is as follows: ; in, represents the interval division unit, Indicates the maximum ambient temperature or maximum operating voltage in the ambient temperature range or operating voltage range. Indicates the minimum ambient temperature or minimum operating voltage in the ambient temperature range or operating voltage range. Indicates the division into groups. represents the preset weight factor, Indicates the preset correction item, Indicates the preset denominator stability compensation amount.

[0008] Optionally, the dividing ambient temperature groups and the dividing operating voltage groups are paired to obtain a dividing bias condition matrix, including: Extract one ambient temperature from each of the divided ambient temperature groups, and perform the following operations on each of the extracted ambient temperatures: Pairing the ambient temperature with all the operating voltages in the divided operating voltage group to obtain a divided bias condition group set; The partition bias condition sets are summarized to obtain multiple partition bias condition sets, a blank two-dimensional matrix is ​​constructed, and multiple partition bias condition sets are imported into the blank two-dimensional matrix to obtain a partition bias condition matrix, wherein the partition bias condition matrix is ​​as follows: ; in, represents the partition bias condition matrix, Indicates the first Ambient temperature, Indicates the division of the working voltage group Working voltage, Indicates the first Ambient temperature, Indicates the division of the working voltage group Working voltage, represents a row vector.

[0009] Optionally, the method of using a pre-adjusted electronic radiation device to irradiate a fast recovery diode in the initialization circuit and performing irradiation monitoring on the initialization circuit to obtain temperature data, irradiation dose, voltage data and leakage current data includes: Starting the pre-adjusted electronic radiation device and recording the time of starting the pre-adjusted electronic radiation device to obtain the irradiation start time; The pre-built integrated sensor is set using the preset data acquisition frequency to obtain the control integrated sensor, wherein the integrated sensor includes: a temperature sensor, a voltage sensor and a current sensor; According to the start irradiation time and the control integrated sensor, the initial circuit is irradiated and monitored to obtain an initial integrated set and an initial irradiation dose, wherein the initial integrated set includes: initial temperature, initial voltage and initial current, wherein the irradiation monitoring includes: temperature monitoring, voltage monitoring and leakage current detection; When the initial irradiation dose is equal to the maximum irradiation dose gradient in the irradiation parameters, the pre-adjusted electron radiation device is turned off, and the time of turning off the pre-adjusted electron radiation device is recorded to obtain the end irradiation time; Acquire the irradiation time period based on the irradiation start time and the irradiation end time, and acquire the irradiation temperature data, the irradiation voltage data, the irradiation dose and the irradiation leakage current data according to the irradiation time period; Data processing operations are performed on the irradiation temperature data, the irradiation voltage data, and the irradiation leakage current data to obtain temperature data, voltage data, and leakage current data.

[0010] Optionally, predicting the service life of a fast recovery diode includes: Obtain the unirradiated leakage current, unirradiated reverse recovery time and reverse recovery time of the fast recovery diode; Obtaining the leakage current increase ratio and the reverse recovery time change ratio based on the unirradiated leakage current, the leakage current data, the unirradiated reverse recovery time and the reverse recovery time; The service life of the fast recovery diode is predicted using the pre-built prediction service life formula, the reverse recovery time change ratio, and the leakage current increase ratio. The prediction service life formula is as follows: ; in, Indicates service life, Indicates the theoretical service life of the fast recovery diode when not irradiated. represents a natural constant, represents the irradiation dose gradient, It represents the influence coefficient of radiation dose gradient on service life, Indicates the influence coefficient of leakage current increase ratio on service life, Indicates the leakage current increase ratio, Indicates the influence coefficient of the reverse recovery time change ratio on the life, Indicates the reverse recovery time change ratio, Indicates the influence coefficient of ambient temperature on service life, Indicates the ambient temperature, Indicates the preset reference temperature, Indicates the influence coefficient of working voltage on service life, Indicates the operating voltage, Indicates the preset initial voltage.

[0011] Optionally, the step of obtaining the leakage current increase ratio and the reverse recovery time change ratio based on the non-irradiated leakage current, the leakage current data, the non-irradiated reverse recovery time and the reverse recovery time includes: The leakage current increase ratio is calculated based on the non-irradiated leakage current and leakage current data, where the calculation formula for the leakage current increase ratio is as follows: ; in, Indicates leakage current data, Indicates the preset average leakage current, Indicates non-irradiated leakage current; The reverse recovery time change ratio is calculated based on the unirradiated reverse recovery time and the reverse recovery time, wherein the calculation formula of the reverse recovery time change ratio is as follows: ; in, Reverse recovery time, Indicates the preset average reverse recovery time.

[0012] Optionally, obtaining the performance measurement report based on the unit evaluation report set includes: Extract unit assessment reports from the unit assessment report set in sequence, and perform the following operations on each of the extracted unit assessment reports: Based on the unit evaluation report, the irradiated particle concentration, irradiation time parameters, experimental group parameters and service life parameters are obtained; If the irradiated particle concentration and the irradiation time parameters are respectively less than the preset concentration parameters and the preset time parameters, the irradiation time parameters, the experimental group parameters and the service life parameters corresponding to the unit evaluation report are confirmed as safe use condition parameters; otherwise, the irradiation time parameters, the experimental group parameters and the service life parameters corresponding to the unit evaluation report are confirmed as extreme condition parameters; The safe use condition parameters and the extreme condition parameters are summarized respectively to obtain a safe condition report set and an extreme condition report set; If there is a service life parameter less than the preset service life parameter in the safety condition report set, extract the safety condition report corresponding to the service life parameter less than the preset service life parameter, obtain the safety group to be counted, count the number of safety groups to be counted, and obtain the number of abnormalities; If the number of anomalies exceeds the preset anomaly threshold, the security group to be counted will be used as the security anomaly report group; Otherwise, the security group to be counted will be regarded as the security normal report group; The extreme life value is calculated based on the preset rated life and the pre-built life allowable fluctuation coefficient, the extreme condition reports whose service life parameters are less than the extreme life value are removed from the extreme condition report set, and the retained extreme condition reports are summarized to obtain an optimized extreme report set; The optimization parameters are obtained by using the pre-built irradiation condition comprehensive scoring formula and the optimization extreme report set. The optimization parameters are calculated by using the preset safety factor to obtain the extreme condition use threshold interval. The optimization extreme report within the extreme condition use threshold interval is confirmed as a high-quality extreme condition report, and the optimization extreme report not within the extreme condition use threshold interval is regarded as a failed high-quality extreme condition report. Summarize the safe and normal report group and the high-quality extreme condition report to obtain the initial recommended parameter report, identify and summarize the recommended experimental parameter group in the initial recommended parameter report to obtain the recommended parameter report; Summarize the failure quality extreme condition reports, safety abnormality report groups and extreme condition reports where the service life parameters are less than the extreme life value to obtain the invalid parameter report; Summarize the recommended parameter reports and invalid parameter reports to obtain the performance test report.

[0013] Optionally, the method of obtaining the optimization parameters by using a pre-built irradiation condition comprehensive scoring formula and an optimization extreme report set includes: Extract one optimization extreme report set from the optimization extreme report set in turn, and perform the following operations on the extracted optimization extreme reports: The pre-built irradiation condition comprehensive scoring formula is used to evaluate the optimization extreme report and obtain the optimization evaluation value. The irradiation condition comprehensive scoring formula is as follows: ; in, represents the optimized evaluation value, Indicates the preset scale factor, represents the concentration of irradiated particles, represents the irradiation time parameter, Indicates the service life parameter; The optimization evaluation values ​​are summarized to obtain an optimization evaluation value set, and the experimental parameter group of the optimization extreme report corresponding to the largest optimization evaluation value in the optimization evaluation value set is identified to obtain the optimization parameters.

[0014] To achieve the above object, the present invention also provides a fast recovery diode performance test system based on electron irradiation, comprising: A test preparation module is used to receive a diode performance test instruction, set a bias condition interval according to the diode performance test instruction, wherein the bias condition interval includes: an ambient temperature interval and an operating voltage interval, obtain a fast recovery diode set, and obtain multiple experimental groups based on the bias condition interval and the fast recovery diode set, wherein the fast recovery diode set includes multiple identical fast recovery diodes; The experiment preparation module is used to extract the experimental groups from the multiple experimental groups in sequence, and perform the following operations on the extracted experimental groups: extract the fast recovery diodes corresponding to the experimental groups, build a test circuit according to the extracted fast recovery diodes, and initialize the test circuit to obtain an initialization circuit, and set the pre-built electronic radiation device using preset irradiation parameters to obtain a pre-adjusted electronic radiation device, wherein the irradiation parameters include: irradiation particle type and irradiation dose gradient; A data analysis module, used to irradiate the fast recovery diode in the initialization circuit by using a pre-adjusted electronic radiation device, and perform irradiation monitoring on the initialization circuit to obtain temperature data, irradiation dose, voltage data and leakage current data. If it is confirmed that the irradiation dose is equal to a preset irradiation particle value and the fast recovery diode is not damaged or burned, the service life of the fast recovery diode is predicted, the leakage current increase ratio and the leakage current curve are obtained based on the leakage current data, a visual temperature image is obtained based on the temperature data, and a voltage curve is obtained based on the voltage data; The report generation module is used to evaluate the usage parameters of the fast recovery diode according to the visualized temperature image, service life, voltage curve and leakage current curve, obtain a unit evaluation report, summarize the unit evaluation reports, obtain a unit evaluation report set corresponding to multiple experimental groups, obtain a performance measurement report based on the unit evaluation report set, and complete the fast recovery diode performance test based on electron irradiation based on the performance measurement report.

[0015] In order to solve the above problem, the present invention further provides an electronic device, the electronic device comprising: A memory storing at least one instruction; The processor executes the instructions stored in the memory to implement the above-mentioned fast recovery diode performance testing method based on electron irradiation.

[0016] In order to solve the above problems, the present invention also provides a computer-readable storage medium, in which at least one instruction is stored. The at least one instruction is executed by a processor in an electronic device to implement the above-mentioned fast recovery diode performance testing method based on electron irradiation.

[0017] The present invention is to solve the problem described in the background technology. The present invention receives a diode performance test instruction and sets a bias condition interval according to the diode performance test instruction, wherein the bias condition interval includes: an ambient temperature interval and an operating voltage interval. The present invention sets the ambient temperature interval and the operating voltage interval by receiving the diode performance test instruction, which can be closer to various complex environments in which fast recovery diodes are used in actual applications, thereby making the test results more valuable for reference, and helping to evaluate the actual performance of the diode under different working conditions, obtaining a fast recovery diode set, and obtaining multiple experimental groups based on the bias condition interval and the fast recovery diode set, wherein the fast recovery diode set includes multiple identical fast recovery diodes, and the present invention is based on the bias condition interval. By dividing the experimental groups into multiple groups, the fast recovery diode can be tested under different combinations of ambient temperature and working voltage, and the performance difference of the fast recovery diode under various conditions can be more comprehensively examined. The experimental groups are extracted from the multiple experimental groups in turn, and the following operations are performed on the extracted experimental groups: the fast recovery diode corresponding to the experimental group is extracted, a test circuit is built according to the extracted fast recovery diode, and the test circuit is initialized to obtain an initialized circuit. The initialization operation of the test circuit performed by the present invention can eliminate the initial interference and unstable factors in the circuit, so that the circuit is in a stable state before entering the formal test, and the foundation is laid for the subsequent accurate measurement of the performance parameters of the diode. The pre-constructed electronic radiation equipment is set using the preset irradiation parameters to obtain To the pre-adjusted electronic radiation equipment, wherein the irradiation parameters include: irradiation particle type and irradiation dose gradient. The present invention can simulate the actual working conditions of the fast recovery diode in different radiation scenarios by setting the irradiation particle type and the irradiation dose gradient, so as to more accurately evaluate the performance change of the diode in the radiation environment. The pre-adjusted electronic radiation equipment is used to irradiate the fast recovery diode in the initialization circuit, and the irradiation of the initialization circuit is monitored to obtain temperature data, irradiation dose, voltage data and leakage current data. If it is confirmed that the irradiation dose is equal to the preset irradiation particle value and the fast recovery diode is not damaged or burned, the service life of the fast recovery diode is predicted. The present invention simultaneously performs temperature monitoring and voltage monitoring during the irradiation process. Voltage monitoring and leakage current detection can obtain the changes of various performance parameters of the diode under radiation in real time, and timely discover abnormal fluctuations in the performance of the diode. By monitoring these data at the same time, the performance changes of the diode under radiation environment can be comprehensively evaluated from multiple dimensions, avoiding the limitation of single indicator evaluation. The leakage current increase ratio and leakage current curve are obtained based on the leakage current data, the visualized temperature image is obtained based on the temperature data, and the voltage curve is obtained based on the voltage data. The leakage current increase ratio, leakage current curve, visualized temperature image and voltage curve of the present invention can intuitively display the changing trends of various performance indicators of the diode over time or radiation dose during the irradiation process, which is convenient for researchers to quickly identify the laws and characteristics of performance changes.The fast recovery diode is evaluated for usage parameters according to the visualized temperature image, service life, voltage curve and leakage current curve to obtain a unit evaluation report. The present invention predicts the service life of the fast recovery diode by integrating multiple performance indicator data, which can provide an important reference basis for practical applications, help users to reasonably arrange the maintenance and replacement cycle of the equipment, reduce the risks and losses caused by the failure of the fast recovery diode, summarize the unit evaluation report, obtain the unit evaluation report set corresponding to multiple experimental groups, and obtain the performance measurement report based on the unit evaluation report set. The present invention generates a performance measurement report based on the unit evaluation result set, so that the test results are presented in a standardized and clear form, which is convenient for relevant personnel to consult and refer to, and provides strong technical support for product research and development, production and application. The fast recovery diode performance test based on electron irradiation is completed based on the performance measurement report. Therefore, the present invention can improve the reliability and stability of the fast recovery diode in a radiation environment. , BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 A schematic flow chart of a fast recovery diode performance testing method based on electron irradiation provided in one embodiment of the present invention; Figure 2 A functional module diagram of a fast recovery diode performance test system based on electron irradiation provided by an embodiment of the present invention; Figure 3 A schematic structural diagram of an electronic device for implementing the fast recovery diode performance testing method based on electron irradiation provided in one embodiment of the present invention.

[0019] Description of reference numerals: 1. Electronic device; 10. Processor; 11. Memory; 12. Bus.

[0020] The realization of the purpose, functional features and advantages of the present invention will be further explained in conjunction with embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0021] It should be understood that the specific embodiments described herein are only used to explain the present invention, and are not used to limit the present invention.

[0022] The embodiment of the present application provides a fast recovery diode performance test method based on electron irradiation. The execution subject of the fast recovery diode performance test method based on electron irradiation includes but is not limited to at least one of the electronic devices such as a server and a terminal that can be configured to execute the method provided by the embodiment of the present application. In other words, the fast recovery diode performance test method based on electron irradiation can be executed by software or hardware installed in a terminal device or a server device, and the software can be a blockchain platform. The server includes but is not limited to: a single server, a server cluster, a cloud server or a cloud server cluster, etc.

[0023] Reference Figure 1 FIG. 1 is a flow chart of a fast recovery diode performance test method based on electron irradiation provided by an embodiment of the present invention. In this embodiment, the fast recovery diode performance test method based on electron irradiation includes: S1. Receive a diode performance test instruction, and set a bias condition interval according to the diode performance test instruction.

[0024] The bias condition interval includes: an ambient temperature interval and an operating voltage interval, wherein the ambient temperature interval includes: a maximum ambient temperature and a minimum ambient temperature, and the operating voltage interval includes: a maximum operating voltage and a minimum operating voltage.

[0025] It should be explained that the diode performance test instruction is an instruction initiated by the tester to start and guide the fast recovery diode performance test process. The bias condition interval is set according to the diode performance test instruction, which means obtaining the historical bias condition interval according to the diode performance test instruction, and setting the bias condition interval according to the historical bias condition interval. The bias condition interval set in the embodiment of the present invention is an interval set manually. The ambient temperature interval refers to the range of values ​​of the test ambient temperature set when the fast recovery diode is subjected to a performance test. The operating voltage range refers to the range of values ​​of the voltage applied to the two ends of the fast recovery diode when testing the performance of the fast recovery diode. The historical bias condition interval refers to the bias condition interval used when the performance test of the fast recovery diode was performed in the past time period.

[0026] S2. Obtain a fast recovery diode set, and obtain multiple experimental groups based on the bias condition interval and the fast recovery diode set.

[0027] Specifically, the fast recovery diode set includes a plurality of identical fast recovery diodes.

[0028] It can be understood that the fast recovery diode set is a group consisting of a plurality of identical fast recovery diodes.

[0029] In detail, the method of obtaining multiple experimental groups based on the bias condition interval and the fast recovery diode set includes: Obtain an interval division unit, and use the interval division unit to divide the ambient temperature interval and the working voltage interval in the bias condition interval into intervals to obtain a divided ambient temperature group and a divided working voltage group, wherein the divided ambient temperature group includes multiple ambient temperatures, and the divided working voltage group includes multiple working voltages; Pairing the divided ambient temperature groups and the divided working voltage groups to obtain a divided bias condition matrix, wherein the divided bias condition matrix includes: a plurality of row vectors, wherein the row vector includes: an ambient temperature and a working voltage; A plurality of experimental groups are set based on a plurality of row vectors and a fast recovery diode set in a partitioned bias condition matrix, wherein one experimental group corresponds to one fast recovery diode and one row vector.

[0030] It should be explained that the partition bias condition matrix is ​​a matrix structure obtained by pairing the partition ambient temperature group and the partition working voltage group. The interval partition unit refers to the smallest unit used to divide the ambient temperature interval and the working voltage interval in the bias condition interval respectively. Exemplarily, let the interval partition unit be 1, and use the interval partition unit to divide the working voltage interval [1,5] to obtain discrete values ​​(1,2,3,4,5). The steps of obtaining the interval partition unit will be given later.

[0031] In detail, the acquisition interval division unit includes: Set the partition groups, and use the partition groups and the pre-built interval unit partition formula to calculate the interval partition unit. The interval unit partition formula is as follows: ; in, represents the interval division unit, Indicates the maximum ambient temperature or maximum operating voltage in the ambient temperature range or operating voltage range. Indicates the minimum ambient temperature or minimum operating voltage in the ambient temperature range or operating voltage range. Indicates the division into groups. represents the preset weight factor, Indicates the preset correction item, Indicates the preset denominator stability compensation amount.

[0032] It should be explained that the division group refers to a number of groups that is pre-set by an artificial person. The division group determines how many parts the ambient temperature range or the operating voltage range is divided into. By setting different division groups, the degree of fineness of the division can be adjusted, thereby affecting the number of values ​​in the final divided ambient temperature group and divided operating voltage group. The larger the division group, the finer the division, and the smaller the division group, the coarser the division. The weight factor refers to a preset coefficient used to adjust the size of the interval division unit. When the weight factor is greater than 1, the interval division unit increases, and when the weight factor is less than 1 and greater than 0, the interval division unit decreases.

[0033] It should be explained that the correction term refers to a preset constant, which is used to fine-tune the calculation results of the interval division unit, so that the value after division can better reflect the actual situation. The denominator stability compensation refers to a preset constant used to ensure the stability of the denominator of the interval unit division formula.

[0034] For example, when the division group n is equal to 1, if there is no denominator stability compensation, the denominator will be 1, which will make the calculated interval division unit too large, resulting in unreasonable division results. Adding the denominator stability compensation, such as the denominator stability compensation is equal to 1, the denominator is 2, and the calculated interval division unit will be more in line with the actual division requirements.

[0035] In detail, the partitioning of the ambient temperature groups and the partitioning of the operating voltage groups is paired to obtain a partitioning bias condition matrix, including: Extract one ambient temperature from each of the divided ambient temperature groups, and perform the following operations on each of the extracted ambient temperatures: Pairing the ambient temperature with all the operating voltages in the divided operating voltage group to obtain a divided bias condition group set; The partition bias condition sets are summarized to obtain multiple partition bias condition sets, a blank two-dimensional matrix is ​​constructed, and multiple partition bias condition sets are imported into the blank two-dimensional matrix to obtain a partition bias condition matrix, wherein the partition bias condition matrix is ​​as follows: ; in, represents the partition bias condition matrix, Indicates the first Ambient temperature, Indicates the division of the working voltage group Working voltage, Indicates the first Ambient temperature, Indicates the division of the working voltage group Working voltage, represents a row vector.

[0036] It should be explained that the partition bias condition set is a set of bias condition combinations obtained by pairing a certain ambient temperature in the partition ambient temperature group with all the working voltages in the partition working voltage group in the process of pairing the partition ambient temperature group and the partition working voltage group. By generating multiple partition bias condition sets, all possible combinations of ambient temperature and working voltage can be systematically listed, providing a basis for subsequent aggregation to form a complete partition bias condition matrix.

[0037] For example, the ambient temperature groups are divided into , divided into working voltage groups , when the extraction environment temperature When the ambient temperature Paired with the working voltage in the divided working voltage group, the divided bias condition group set is obtained as {( ,5V),( ,10V)}, when the ambient temperature is extracted When , the partition bias condition set is obtained as {( ,5V),( ,10V)}.

[0038] It is understood that the blank two-dimensional matrix refers to a pre-created two-dimensional matrix that has not yet been filled with any data. The row vector refers to a row of elements in the partition bias condition matrix, which consists of an ambient temperature and an operating voltage.

[0039] S3. Extracting experimental groups from the multiple experimental groups in turn, and performing the following operations on the extracted experimental groups: extracting fast recovery diodes corresponding to the experimental groups, building a test circuit according to the extracted fast recovery diodes, and initializing the test circuit to obtain an initialization circuit.

[0040] It should be explained that a fast recovery diode is a semiconductor diode with good switching characteristics and short reverse recovery time. The test circuit is a circuit built to perform performance testing on a fast recovery diode. The steps of building a test circuit based on the extracted fast recovery diode are: selecting a suitable circuit topology (such as a rectifier circuit, inverter circuit, etc.) and selecting components (power supply, resistors and capacitors, etc.) according to the fast recovery diode, and connecting the components according to the circuit topology to build a test circuit.

[0041] Importantly, initializing the test circuit refers to the operation of checking whether the various components in the test circuit are connected correctly. The initialization circuit refers to the circuit obtained after the circuit initialization operation is performed on the test circuit, ensuring the accuracy and reliability of the test process and providing a stable and repeatable experimental environment for the performance test of the fast recovery diode.

[0042] S4. Setting the pre-built electron radiation device using preset irradiation parameters to obtain a pre-adjusted electron radiation device, wherein the irradiation parameters include: irradiation particle type and irradiation dose gradient.

[0043] It should be explained that electronic radiation equipment refers to a device that can generate and emit radiation. It can emit radiation particles of different types and doses according to the set irradiation parameters. Pre-adjusted electronic radiation equipment refers to equipment obtained by setting the electronic radiation equipment according to preset irradiation parameters. The irradiated particle type is the type of radiation particle emitted by the electronic radiation equipment. The irradiated particle types include: electrons, protons, neutrons, gamma rays, etc. The irradiation dose gradient refers to a pre-set gradient. By setting the irradiation dose gradient, the performance change law of the fast recovery diode under different irradiation doses can be studied.

[0044] S5. Use a pre-adjusted electronic radiation device to irradiate the fast recovery diode in the initialization circuit, and monitor the irradiation of the initialization circuit to obtain temperature data, irradiation dose, voltage data and leakage current data.

[0045] In detail, the method of using a pre-adjusted electronic radiation device to irradiate a fast recovery diode in an initialization circuit and performing irradiation monitoring on the initialization circuit to obtain temperature data, irradiation dose, voltage data and leakage current data includes: Starting the pre-adjusted electronic radiation device and recording the time of starting the pre-adjusted electronic radiation device to obtain the irradiation start time; The pre-built integrated sensor is set using the preset data acquisition frequency to obtain the control integrated sensor, wherein the integrated sensor includes: a temperature sensor, a voltage sensor and a current sensor; According to the start irradiation time and the control integrated sensor, the initial circuit is irradiated and monitored to obtain an initial integrated set and an initial irradiation dose, wherein the initial integrated set includes: initial temperature, initial voltage and initial current, wherein the irradiation monitoring includes: temperature monitoring, voltage monitoring and leakage current detection; When the initial irradiation dose is equal to the maximum irradiation dose gradient in the irradiation parameters, the pre-adjusted electron radiation device is turned off, and the time of turning off the pre-adjusted electron radiation device is recorded to obtain the end irradiation time; Acquire the irradiation time period based on the irradiation start time and the irradiation end time, and acquire the irradiation temperature data, the irradiation voltage data, the irradiation dose and the irradiation leakage current data according to the irradiation time period; Data processing operations are performed on the irradiation temperature data, the irradiation voltage data, and the irradiation leakage current data to obtain temperature data, voltage data, and leakage current data.

[0046] It should be explained that the start irradiation time refers to the time point recorded when the pre-adjusted electronic radiation equipment is started. Temperature sensors, voltage sensors and current sensors refer to detection devices that can sense temperature, voltage and current and convert temperature, voltage and current into output signals. The initial irradiation dose refers to the irradiation dose accumulated at the start of irradiation time during the irradiation monitoring of the fast recovery diode. The initial temperature refers to the temperature value of the fast recovery diode measured by the temperature sensor when the irradiation monitoring is started and the initial comprehensive set data is obtained.

[0047] It should be explained that the initial voltage refers to the voltage value across the fast recovery diode measured by the voltage sensor when acquiring the initial comprehensive set data. The initial current refers to the leakage current value in the fast recovery diode measured by the current sensor when acquiring the initial comprehensive set data. The end irradiation time refers to the time point recorded when the pre-adjusted electronic radiation device is turned off when the maximum irradiation dose gradient set in the irradiation parameters is reached. The irradiation temperature data, irradiation voltage data and irradiation leakage current data refer to all temperature data, voltage data and leakage current data collected by the comprehensive sensor during the irradiation time period. The data processing operation performed on the irradiation temperature data, irradiation voltage data and irradiation leakage current data refers to the operation of performing data denoising on the irradiation temperature data, irradiation voltage data and irradiation leakage current data.

[0048] S6. If it is confirmed that the irradiation dose is equal to the preset irradiation particle value and the fast recovery diode is not damaged or burned, the service life of the fast recovery diode is predicted, the leakage current increase ratio and the leakage current curve are obtained based on the leakage current data, a visual temperature image is obtained based on the temperature data, and a voltage curve is obtained based on the voltage data.

[0049] It should be explained that the steps of obtaining the leakage current increase ratio and the leakage current curve based on the leakage current data are: constructing a rectangular coordinate system with time as the horizontal axis and the leakage current value as the vertical axis, and obtaining the leakage current curve using programming tools and leakage current data. The steps of obtaining the leakage current curve using programming tools and leakage current data described in the embodiment of the present invention are prior art and will not be repeated here. The steps of obtaining a visualized temperature image based on temperature data and obtaining a voltage curve based on the voltage data are both prior art and will not be repeated here.

[0050] In detail, the method of predicting the service life of a fast recovery diode includes: Obtain the unirradiated leakage current, unirradiated reverse recovery time and reverse recovery time of the fast recovery diode; Obtaining the leakage current increase ratio and the reverse recovery time change ratio based on the unirradiated leakage current, the leakage current data, the unirradiated reverse recovery time and the reverse recovery time; The service life of the fast recovery diode is predicted using the pre-built prediction service life formula, the reverse recovery time change ratio, and the leakage current increase ratio. The prediction service life formula is as follows: ; in, Indicates service life, Indicates the theoretical service life of the fast recovery diode when not irradiated. represents a natural constant, represents the irradiation dose gradient, It represents the influence coefficient of radiation dose gradient on service life, Indicates the influence coefficient of leakage current increase ratio on service life, Indicates the leakage current increase ratio, Indicates the influence coefficient of the reverse recovery time change ratio on the life, Indicates the reverse recovery time change ratio, Indicates the influence coefficient of ambient temperature on service life, Indicates the ambient temperature, Indicates the preset reference temperature, Indicates the influence coefficient of working voltage on service life, Indicates the operating voltage, Indicates the preset initial voltage.

[0051] It should be explained that the acquisition of the unirradiated leakage current, unirradiated reverse recovery time and reverse recovery time of the fast recovery diode refers to the detection of the unirradiated fast recovery diode in the historical detection period to obtain the unirradiated leakage current, unirradiated reverse recovery time and reverse recovery time of the fast recovery diode. The unirradiated leakage current refers to the current passing through the fast recovery diode in the reverse biased state when it is not irradiated by electrons. The unirradiated reverse recovery time refers to the time required for the fast recovery diode to switch from forward conduction to reverse cutoff when it is not irradiated. The reverse recovery time refers to the time it takes for the fast recovery diode to switch from forward conduction to reverse cutoff after irradiation.

[0052] Importantly, the service life refers to the length of time that a fast recovery diode can maintain the specified performance of a fast recovery diode under specified conditions of use. The influence coefficient of the irradiation dose gradient on the service life means that the greater the irradiation dose gradient, the shorter the service life of the fast recovery diode. The influence coefficient of the leakage current increase ratio on the service life means that the greater the leakage current increase ratio, the shorter the service life of the fast recovery diode. The influence coefficient of the reverse recovery time change ratio on the life means that the greater the reverse recovery time change ratio, the shorter the service life of the fast recovery diode.

[0053] It is understandable that the influence coefficient of the ambient temperature on the service life means that the higher the ambient temperature, the shorter the service life of the fast recovery diode. The influence coefficient of the operating voltage on the service life means that when the operating voltage is greater than the initial voltage, the service life of the fast recovery diode is shorter. The reference temperature refers to a preset reference temperature. The initial voltage refers to a preset voltage.

[0054] In detail, the method of obtaining the leakage current increase ratio and the reverse recovery time change ratio based on the non-irradiated leakage current, the leakage current data, the non-irradiated reverse recovery time and the reverse recovery time includes: The leakage current increase ratio is calculated based on the non-irradiated leakage current and leakage current data, where the calculation formula for the leakage current increase ratio is as follows: ; in, Indicates leakage current data, Indicates the preset average leakage current, Indicates non-irradiated leakage current; The reverse recovery time change ratio is calculated based on the unirradiated reverse recovery time and the reverse recovery time, wherein the calculation formula of the reverse recovery time change ratio is as follows: ; in, Reverse recovery time, Indicates the preset average reverse recovery time.

[0055] It should be explained that the average leakage current refers to the average value of all leakage current data obtained in the historical detection time period. The average reverse recovery time refers to the average value of all reverse recovery times obtained in the historical detection time period.

[0056] S7. Evaluate the usage parameters of the fast recovery diode according to the visualized temperature image, service life, voltage curve and leakage current curve to obtain a unit evaluation report.

[0057] It should be explained that the unit evaluation report refers to the evaluation report obtained after the performance test of the fast recovery diodes in a single experimental group.

[0058] S8. Summarize the unit evaluation reports to obtain a set of unit evaluation reports corresponding to multiple experimental groups, and obtain a performance measurement report based on the set of unit evaluation reports.

[0059] It can be understood that the unit assessment report set is a collection consisting of all unit assessment reports.

[0060] In detail, the obtaining of the performance measurement report based on the unit evaluation report set includes: Extract unit assessment reports from the unit assessment report set in sequence, and perform the following operations on each of the extracted unit assessment reports: Based on the unit evaluation report, the irradiated particle concentration, irradiation time parameters, experimental group parameters and service life parameters are obtained; If the irradiated particle concentration and the irradiation time parameters are respectively less than the preset concentration parameters and the preset time parameters, the irradiation time parameters, the experimental group parameters and the service life parameters corresponding to the unit evaluation report are confirmed as safe use condition parameters; otherwise, the irradiation time parameters, the experimental group parameters and the service life parameters corresponding to the unit evaluation report are confirmed as extreme condition parameters; The safe use condition parameters and the extreme condition parameters are summarized respectively to obtain a safe condition report set and an extreme condition report set; If there is a service life parameter less than the preset service life parameter in the safety condition report set, extract the safety condition report corresponding to the service life parameter less than the preset service life parameter, obtain the safety group to be counted, count the number of safety groups to be counted, and obtain the number of abnormalities; If the number of anomalies exceeds the preset anomaly threshold, the security group to be counted will be used as the security anomaly report group; Otherwise, the security group to be counted will be regarded as the security normal report group; The extreme life value is calculated based on the preset rated life and the pre-built life allowable fluctuation coefficient, the extreme condition reports whose service life parameters are less than the extreme life value are removed from the extreme condition report set, and the retained extreme condition reports are summarized to obtain an optimized extreme report set; The optimization parameters are obtained by using the pre-built irradiation condition comprehensive scoring formula and the optimization extreme report set. The optimization parameters are calculated by using the preset safety factor to obtain the extreme condition use threshold interval. The optimization extreme report within the extreme condition use threshold interval is confirmed as a high-quality extreme condition report, and the optimization extreme report not within the extreme condition use threshold interval is regarded as a failed high-quality extreme condition report. Summarize the safe and normal report group and the high-quality extreme condition report to obtain the initial recommended parameter report, identify and summarize the recommended experimental parameter group in the initial recommended parameter report to obtain the recommended parameter report; Summarize the failure quality extreme condition reports, safety abnormality report groups and extreme condition reports where the service life parameters are less than the extreme life value to obtain the invalid parameter report; Summarize the recommended parameter reports and invalid parameter reports to obtain the performance test report.

[0061] Importantly, the server refers to a computer system used to store and manage performance test reports. Experimental group parameters refer to different bias conditions in the experimental group. Concentration parameters refer to a preset concentration reference value. Time parameters are a preset time reference value. Safe use condition parameters refer to when the actual irradiated particle concentration is less than the preset concentration parameter, and the actual irradiation time parameter is less than the preset time parameter, the corresponding irradiation time parameter, experimental group parameter and service life parameter are confirmed as safe use condition parameters. Extreme condition parameters are when the irradiated particle concentration in the unit assessment report is not less than the preset concentration parameter, or the irradiation time parameter is not less than the preset time parameter, the irradiation time parameter, experimental group parameter and service life parameter corresponding to the unit assessment report. The safety condition report set is a set consisting of all safety condition reports.

[0062] It should be explained that the extreme condition report set is a set consisting of all extreme condition reports. The safety group to be counted is in the safety condition report set. If there is a situation where the service life parameter is less than the preset service life parameter, then a set of safety condition reports corresponding to the service life parameter less than the preset service life parameter is extracted. The number of abnormalities refers to the number obtained by counting the reports in the safety group to be counted. The abnormal threshold refers to a preset value used to determine whether there are too many abnormal conditions in the safety group to be counted. The safety abnormal report group refers to the safety group to be counted when the number of abnormalities exceeds the preset abnormal threshold. The safety normal report group refers to the safety group to be counted if the number of abnormalities does not exceed the preset abnormal threshold. The rated life refers to a preset standard value, which represents the service life that the fast recovery diode should achieve under ideal conditions. The allowable fluctuation coefficient of life refers to a preset coefficient used to measure the fluctuation range that can be allowed for the service life of the fast recovery diode relative to the rated life. The calculation formula for calculating the extreme life value based on the preset rated life and the pre-built allowable fluctuation coefficient of life is as follows: ; in, represents the extreme lifespan value, Indicates the rated life, Indicates the allowable fluctuation coefficient of life.

[0063] Importantly, the optimization parameters refer to the parameters obtained by evaluating the optimized extreme report set using the comprehensive scoring formula for irradiation conditions. The extreme condition use threshold interval refers to a numerical interval obtained by calculating the optimization parameters using a preset safety factor. A high-quality extreme condition report refers to a report in the optimized extreme report set that is within the extreme condition use threshold interval. A failed high-quality extreme condition report refers to a report that is not within the extreme condition use threshold interval. A recommended parameter report refers to a report that is formed by extracting the parameter groups corresponding to the safety normal report group and the high-quality extreme condition report. An invalid parameter report refers to a report that is obtained by summarizing the failed high-quality extreme condition report, the safety abnormal report group, and the extreme condition report whose service life parameters are less than the extreme life value.

[0064] It should also be explained that the initial recommended parameter report refers to a report that is a summary of the safe normal report group and the high-quality extreme condition report. The recommended experimental parameter group refers to the combination identified and summarized from the initial recommended parameter report. The recommended parameter report is a report that summarizes the recommended experimental parameter group.

[0065] In detail, the method of obtaining the optimization parameters by using the pre-built irradiation condition comprehensive scoring formula and the optimization extreme report set includes: Extract one optimization extreme report set from the optimization extreme report set in turn, and perform the following operations on the extracted optimization extreme reports: The pre-built irradiation condition comprehensive scoring formula is used to evaluate the optimization extreme report and obtain the optimization evaluation value. The irradiation condition comprehensive scoring formula is as follows: ; in, represents the optimized evaluation value, Indicates the preset scaling factor, represents the concentration of irradiated particles, represents the irradiation time parameter, Indicates the service life parameter; The optimization evaluation values ​​are summarized to obtain an optimization evaluation value set, and the experimental parameter group of the optimization extreme report corresponding to the largest optimization evaluation value in the optimization evaluation value set is identified to obtain the optimization parameters.

[0066] It should be explained that the optimization extreme report set is a set consisting of all optimization extreme reports. The optimization evaluation value is a value calculated by the comprehensive scoring formula of irradiation conditions, which is used to evaluate the pros and cons of a single optimization extreme report. The proportionality coefficient refers to a preset constant. The irradiation particle concentration refers to the number of irradiated particles contained in a unit volume during the irradiation experiment of the fast recovery diode. The irradiation time parameter refers to the duration of irradiation of the fast recovery diode. The service life parameter refers to the length of time that the fast recovery diode can work normally in the experimental group. The optimization evaluation value set is a set consisting of all optimization evaluation values.

[0067] It should be noted that the greater the concentration of irradiated particles and the longer the irradiation time parameter, the easier it is for the fast recovery diode to be damaged and burned, and thus the shorter the service life parameter.

[0068] In the embodiment of the present invention, when the concentration of irradiated particles is greater, the irradiation time parameter is longer, and the service life parameter is shorter, the optimization evaluation value score is higher. Furthermore, the embodiment of the present invention believes that the higher the extreme degree of the experiment, the less likely the fast recovery diode can or should be used for a long time under the conditions of the corresponding experimental parameter group.

[0069] Furthermore, the embodiment of the present invention quantifies the extreme degree of the electron irradiation experiment through the irradiation particle concentration, irradiation time parameter, and service life parameter, so as to extract and identify the experimental parameter group corresponding to the optimization extreme report of the maximum optimization evaluation value in the optimization evaluation value set, and the experimental parameter group that can be found is the most extreme degree of the experiment. Therefore, the optimization parameters should also include all parameters set during the experiment, including but not limited to irradiation time, irradiation concentration, ambient temperature, voltage, etc. On this basis, the optimization parameters are adjusted through the safety factor, and the extreme condition use threshold interval in which the fast recovery diode can be safely used can be found. For example, the maximum irradiation concentration in the extreme condition use threshold interval is eighty percent of the irradiation concentration in the optimization parameters.

[0070] S9. Complete the fast recovery diode performance test based on electron irradiation based on the performance measurement report.

[0071] It should be explained that the performance measurement report is a comprehensive report generated by the recommended parameter report and the invalid parameter report, which reflects the overall performance of the fast recovery diode set, provides users with comprehensive performance evaluation results, and guides the selection and use of diodes.

[0072] The present invention is to solve the problem described in the background technology. The present invention receives a diode performance test instruction and sets a bias condition interval according to the diode performance test instruction, wherein the bias condition interval includes: an ambient temperature interval and an operating voltage interval. The present invention sets the ambient temperature interval and the operating voltage interval by receiving the diode performance test instruction, which can be closer to various complex environments in which fast recovery diodes are used in actual applications, thereby making the test results more valuable for reference, and helping to evaluate the actual performance of the diode under different working conditions, obtaining a fast recovery diode set, and obtaining multiple experimental groups based on the bias condition interval and the fast recovery diode set, wherein the fast recovery diode set includes multiple identical fast recovery diodes, and the present invention is based on the bias condition interval. By dividing the experimental groups into multiple groups, the fast recovery diode can be tested under different combinations of ambient temperature and working voltage, and the performance difference of the fast recovery diode under various conditions can be more comprehensively examined. The experimental groups are extracted from the multiple experimental groups in turn, and the following operations are performed on the extracted experimental groups: the fast recovery diode corresponding to the experimental group is extracted, a test circuit is built according to the extracted fast recovery diode, and the test circuit is initialized to obtain an initialized circuit. The initialization operation of the test circuit performed by the present invention can eliminate the initial interference and unstable factors in the circuit, so that the circuit is in a stable state before entering the formal test, and the foundation is laid for the subsequent accurate measurement of the performance parameters of the diode. The pre-constructed electronic radiation equipment is set using the preset irradiation parameters to obtain To the pre-adjusted electronic radiation equipment, wherein the irradiation parameters include: irradiation particle type and irradiation dose gradient. The present invention can simulate the actual working conditions of the fast recovery diode in different radiation scenarios by setting the irradiation particle type and the irradiation dose gradient, so as to more accurately evaluate the performance change of the diode in the radiation environment. The pre-adjusted electronic radiation equipment is used to irradiate the fast recovery diode in the initialization circuit, and the irradiation of the initialization circuit is monitored to obtain temperature data, irradiation dose, voltage data and leakage current data. If it is confirmed that the irradiation dose is equal to the preset irradiation particle value and the fast recovery diode is not damaged or burned, the service life of the fast recovery diode is predicted. The present invention simultaneously performs temperature monitoring and voltage monitoring during the irradiation process. Voltage monitoring and leakage current detection can obtain the changes of various performance parameters of the diode under radiation in real time, and timely discover abnormal fluctuations in the performance of the diode. By monitoring these data at the same time, the performance changes of the diode under radiation environment can be comprehensively evaluated from multiple dimensions, avoiding the limitation of single indicator evaluation. The leakage current increase ratio and leakage current curve are obtained based on the leakage current data, the visualized temperature image is obtained based on the temperature data, and the voltage curve is obtained based on the voltage data. The leakage current increase ratio, leakage current curve, visualized temperature image and voltage curve of the present invention can intuitively display the changing trends of various performance indicators of the diode over time or radiation dose during the irradiation process, which is convenient for researchers to quickly identify the laws and characteristics of performance changes.The fast recovery diode is evaluated for usage parameters according to the visualized temperature image, service life, voltage curve and leakage current curve to obtain a unit evaluation report. The present invention predicts the service life of the fast recovery diode by integrating multiple performance indicator data, which can provide an important reference basis for practical applications, help users to reasonably arrange the maintenance and replacement cycle of the equipment, reduce the risks and losses caused by the failure of the fast recovery diode, summarize the unit evaluation report, obtain the unit evaluation report set corresponding to multiple experimental groups, and obtain the performance measurement report based on the unit evaluation report set. The present invention generates a performance measurement report based on the unit evaluation result set, so that the test results are presented in a standardized and clear form, which is convenient for relevant personnel to consult and refer to, and provides strong technical support for product research and development, production and application. The fast recovery diode performance test based on electron irradiation is completed based on the performance measurement report. Therefore, the present invention can improve the reliability and stability of the fast recovery diode in a radiation environment. ,

[0073] like Figure 2 , which is a functional module diagram of a fast recovery diode performance testing system based on electron irradiation provided by an embodiment of the present invention.

[0074] The fast recovery diode performance test system 100 based on electron irradiation of the present invention can be installed in an electronic device. According to the functions to be implemented, the fast recovery diode performance test system 100 based on electron irradiation can include a test preparation module 101, an experiment preparation module 102, a data analysis module 103 and a report generation module 104. The module of the present invention can also be called a unit, which refers to a series of computer program segments that can be executed by an electronic device processor and can complete fixed functions, which are stored in the memory of the electronic device; The test preparation module 101 is used to receive a diode performance test instruction, set a bias condition interval according to the diode performance test instruction, wherein the bias condition interval includes: an ambient temperature interval and an operating voltage interval, obtain a fast recovery diode set, and obtain multiple experimental groups based on the bias condition interval and the fast recovery diode set, wherein the fast recovery diode set includes multiple identical fast recovery diodes; The experiment preparation module 102 is used to extract an experimental group from the multiple experimental groups in sequence, and perform the following operations on the extracted experimental group: extract the fast recovery diode corresponding to the experimental group, build a test circuit according to the extracted fast recovery diode, and initialize the test circuit to obtain an initialization circuit, and set the pre-built electronic radiation device using preset irradiation parameters to obtain a pre-adjusted electronic radiation device, wherein the irradiation parameters include: irradiation particle type and irradiation dose gradient; The data analysis module 103 is used to irradiate the fast recovery diode in the initialization circuit by using a pre-adjusted electronic radiation device, and perform irradiation monitoring on the initialization circuit to obtain temperature data, irradiation dose, voltage data and leakage current data. If it is confirmed that the irradiation dose is equal to a preset irradiation particle value and the fast recovery diode is not damaged or burned, the service life of the fast recovery diode is predicted, the leakage current increase ratio and the leakage current curve are obtained based on the leakage current data, the visual temperature image is obtained based on the temperature data, and the voltage curve is obtained based on the voltage data; The report generation module 104 is used to evaluate the usage parameters of the fast recovery diode according to the visualized temperature image, service life, voltage curve and leakage current curve, obtain a unit evaluation report, summarize the unit evaluation reports, obtain a unit evaluation report set corresponding to multiple experimental groups, obtain a performance measurement report based on the unit evaluation report set, and complete the fast recovery diode performance test based on electron irradiation based on the performance measurement report.

[0075] In detail, each module in the fast recovery diode performance test system 100 based on electron irradiation in the embodiment of the present invention is used in the same manner as described above. Figure 1 The same technical means as the fast recovery diode performance test method based on electron irradiation described in the text and can produce the same technical effects will not be repeated here.

[0076] like Figure 3 , which is a schematic diagram of the structure of an electronic device for implementing a fast recovery diode performance testing method based on electron irradiation provided by an embodiment of the present invention.

[0077] The electronic device 1 may include a processor 10, a memory 11 and a bus 12, and may also include a computer program stored in the memory 11 and executable on the processor 10, such as a fast recovery diode performance test method program based on electron irradiation.

[0078] The memory 11 includes at least one type of readable storage medium, and the readable storage medium includes a flash memory, a mobile hard disk, a multimedia card, a card-type memory (for example, an SD or DX memory, etc.), a magnetic memory, a disk, an optical disk, etc. In some embodiments, the memory 11 may be an internal storage unit of the electronic device 1, such as a mobile hard disk of the electronic device 1. In other embodiments, the memory 11 may also be an external storage device of the electronic device 1, such as a plug-in mobile hard disk, a smart memory card (Smart Media Card, SMC), a secure digital (SecureDigital, SD) card, a flash card (Flash Card), etc. equipped on the electronic device 1. Further, the memory 11 also includes an internal storage unit of the electronic device 1 and an external storage device. The memory 11 can not only be used to store application software and various types of data installed in the electronic device 1, such as the code of the fast recovery diode performance test method program based on electron irradiation, etc., but also can be used to temporarily store data that has been output or is to be output.

[0079] The processor 10 may be composed of an integrated circuit in some embodiments, for example, a single packaged integrated circuit, or a plurality of packaged integrated circuits with the same or different functions, including one or more central processing units (CPUs), microprocessors, digital processing chips, graphics processors, and combinations of various control chips, etc. The processor 10 is the control core (Control Unit) of the electronic device, and uses various interfaces and lines to connect various components of the entire electronic device, and executes or executes programs or modules (such as a fast recovery diode performance test method program based on electron irradiation, etc.) stored in the memory 11, and calls data stored in the memory 11 to execute various functions of the electronic device 1 and process data.

[0080] The bus 12 may be a peripheral component interconnect (PCI) bus or an extended industry standard architecture (EISA) bus, etc. The bus 12 may be divided into an address bus, a data bus, a control bus, etc. The bus 12 is configured to realize connection and communication between the memory 11 and at least one processor 10, etc.

[0081] Figure 3 Only an electronic device with components is shown, and those skilled in the art will understand that Figure 3The structure shown does not constitute a limitation on the electronic device 1, and may include fewer or more components than shown in the figure, or combine certain components, or arrange the components differently.

[0082] For example, although not shown, the electronic device 1 may also include a power source (such as a battery) for supplying power to various components. Preferably, the power source may be logically connected to the at least one processor 10 through a power management device, so that the power management device can realize functions such as charging management, discharging management, and power consumption management. The power source may also include one or more DC or AC power sources, recharging devices, power failure detection circuits, power converters or inverters, power status indicators, and other arbitrary components. The electronic device 1 may also include a variety of sensors, Bluetooth modules, Wi-Fi modules, etc., which will not be repeated here.

[0083] Furthermore, the electronic device 1 may also include a network interface. Optionally, the network interface may include a wired interface and / or a wireless interface (such as a WI-FI interface, a Bluetooth interface, etc.), which is generally used to establish a communication connection between the electronic device 1 and other electronic devices.

[0084] Optionally, the electronic device 1 may further include a user interface, which may be a display, an input unit (such as a keyboard), or a standard wired interface or a wireless interface. Optionally, in some embodiments, the display may be an LED display, a liquid crystal display, a touch-sensitive liquid crystal display, and an OLED (Organic Light-Emitting Diode) touch device. The display may also be appropriately referred to as a display screen or a display unit, which is used to display information processed in the electronic device 1 and to display a visual user interface.

[0085] The program of the fast recovery diode performance test method based on electron irradiation stored in the memory 11 of the electronic device 1 is a combination of multiple instructions. When running in the processor 10, it can achieve: receiving a diode performance test instruction, and setting a bias condition interval according to the diode performance test instruction, wherein the bias condition interval includes: an ambient temperature interval and an operating voltage interval; Acquire a fast recovery diode set, and acquire multiple experimental groups based on the bias condition interval and the fast recovery diode set, wherein the fast recovery diode set includes multiple identical fast recovery diodes; Extract experimental groups from multiple experimental groups in sequence, and perform the following operations on the extracted experimental groups: Extract the fast recovery diode corresponding to the experimental group, build a test circuit according to the extracted fast recovery diode, and initialize the test circuit to obtain an initialization circuit; The pre-built electron radiation device is set using preset irradiation parameters to obtain a pre-adjusted electron radiation device, wherein the irradiation parameters include: irradiation particle type and irradiation dose gradient; Using a pre-adjusted electronic radiation device to irradiate the fast recovery diode in the initialization circuit, and perform irradiation monitoring on the initialization circuit to obtain temperature data, irradiation dose, voltage data and leakage current data; If it is confirmed that the irradiation dose is equal to the preset irradiation particle value and the fast recovery diode is not damaged or burned, the service life of the fast recovery diode is predicted; Acquire a leakage current increase ratio and a leakage current curve based on the leakage current data, acquire a visualized temperature image based on the temperature data, and acquire a voltage curve based on the voltage data; Evaluate the usage parameters of the fast recovery diode based on the visualized temperature image, service life, voltage curve and leakage current curve to obtain a unit evaluation report; Summarize the unit evaluation reports to obtain a set of unit evaluation reports corresponding to multiple experimental groups, and obtain a performance measurement report based on the set of unit evaluation reports; Complete the fast recovery diode performance test based on electron irradiation based on the performance measurement report.

[0086] Specifically, the specific implementation method of the processor 10 for the above instructions can refer to Figures 1 to 3 The description of the relevant steps in the corresponding embodiments will not be repeated here.

[0087] Furthermore, if the module / unit integrated in the electronic device 1 is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. The computer-readable storage medium can be volatile or non-volatile. For example, the computer-readable medium can include: any entity or device capable of carrying the computer program code, a recording medium, a USB flash drive, a mobile hard disk, a magnetic disk, an optical disk, a computer memory, and a read-only memory (ROM).

[0088] The present invention further provides a computer-readable storage medium, wherein the computer-readable storage medium stores a computer program, and when the computer program is executed by a processor of an electronic device, the computer program can implement: receiving a diode performance test instruction, and setting a bias condition interval according to the diode performance test instruction, wherein the bias condition interval includes: an ambient temperature interval and an operating voltage interval; Acquire a fast recovery diode set, and acquire multiple experimental groups based on the bias condition interval and the fast recovery diode set, wherein the fast recovery diode set includes multiple identical fast recovery diodes; Extract experimental groups from multiple experimental groups in sequence, and perform the following operations on the extracted experimental groups: Extract the fast recovery diode corresponding to the experimental group, build a test circuit according to the extracted fast recovery diode, and initialize the test circuit to obtain an initialization circuit; The pre-built electron radiation device is set using preset irradiation parameters to obtain a pre-adjusted electron radiation device, wherein the irradiation parameters include: irradiation particle type and irradiation dose gradient; Using a pre-adjusted electronic radiation device to irradiate the fast recovery diode in the initialization circuit, and perform irradiation monitoring on the initialization circuit to obtain temperature data, irradiation dose, voltage data and leakage current data; If it is confirmed that the irradiation dose is equal to the preset irradiation particle value and the fast recovery diode is not damaged or burned, the service life of the fast recovery diode is predicted; Acquire a leakage current increase ratio and a leakage current curve based on the leakage current data, acquire a visualized temperature image based on the temperature data, and acquire a voltage curve based on the voltage data; Evaluate the usage parameters of the fast recovery diode based on the visualized temperature image, service life, voltage curve and leakage current curve to obtain a unit evaluation report; Summarize the unit evaluation reports to obtain a set of unit evaluation reports corresponding to multiple experimental groups, and obtain a performance measurement report based on the set of unit evaluation reports; Complete the fast recovery diode performance test based on electron irradiation based on the performance measurement report.

[0089] In the several embodiments provided by the present invention, it should be understood that the disclosed devices, systems and methods can be implemented in other ways. For example, the system embodiments described above are only illustrative, and actual implementation may have other division methods.

[0090] The modules described as separate components may or may not be physically separated, and the components shown as modules may or may not be physical units, that is, they may be located in one place or distributed on multiple network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0091] In addition, each functional module in each embodiment of the present invention may be integrated into one processing unit, each unit may exist physically separately, or two or more units may be integrated into one unit. The above-mentioned integrated unit may be implemented in the form of hardware or in the form of hardware plus software functional modules.

[0092] It is obvious to those skilled in the art that the present invention is not limited to the details of the above exemplary embodiments, and that the present invention can be implemented in other specific forms without departing from the spirit or essential characteristics of the present invention.

[0093] Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solution of the present invention can be modified or replaced by equivalents without departing from the spirit and scope of the technical solution of the present invention.

Claims

1. A fast recovery diode performance test method based on electron irradiation, characterized in that: The method comprises: receiving a diode performance test instruction, and setting a bias condition interval according to the diode performance test instruction, wherein the bias condition interval includes: an ambient temperature interval and an operating voltage interval; Acquire a fast recovery diode set, and acquire multiple experimental groups based on the bias condition interval and the fast recovery diode set, wherein the fast recovery diode set includes multiple identical fast recovery diodes; Extract experimental groups from multiple experimental groups in sequence, and perform the following operations on the extracted experimental groups: Extract the fast recovery diode corresponding to the experimental group, build a test circuit according to the extracted fast recovery diode, and initialize the test circuit to obtain an initialization circuit; The pre-built electron radiation device is set using preset irradiation parameters to obtain a pre-adjusted electron radiation device, wherein the irradiation parameters include: irradiation particle type and irradiation dose gradient; Using a pre-adjusted electronic radiation device to irradiate the fast recovery diode in the initialization circuit, and perform irradiation monitoring on the initialization circuit to obtain temperature data, irradiation dose, voltage data and leakage current data; If it is confirmed that the irradiation dose is equal to the preset irradiation particle value and the fast recovery diode is not damaged or burned, the service life of the fast recovery diode is predicted; Acquire a leakage current increase ratio and a leakage current curve based on the leakage current data, acquire a visualized temperature image based on the temperature data, and acquire a voltage curve based on the voltage data; Evaluate the usage parameters of the fast recovery diode based on the visualized temperature image, service life, voltage curve and leakage current curve to obtain a unit evaluation report; Summarize the unit evaluation reports to obtain a set of unit evaluation reports corresponding to multiple experimental groups, and obtain a performance measurement report based on the set of unit evaluation reports; Complete the fast recovery diode performance test based on electron irradiation based on the performance measurement report.

2. The fast recovery diode performance testing method based on electron irradiation according to claim 1, characterized in that: The method of obtaining multiple experimental groups based on the bias condition interval and the fast recovery diode set includes: Obtain an interval division unit, and use the interval division unit to divide the ambient temperature interval and the working voltage interval in the bias condition interval into intervals to obtain a divided ambient temperature group and a divided working voltage group, wherein the divided ambient temperature group includes multiple ambient temperatures, and the divided working voltage group includes multiple working voltages; Pairing the divided ambient temperature groups and the divided working voltage groups to obtain a divided bias condition matrix, wherein the divided bias condition matrix includes: a plurality of row vectors, wherein the row vector includes: an ambient temperature and a working voltage; A plurality of experimental groups are set based on a plurality of row vectors and a fast recovery diode set in a partitioned bias condition matrix, wherein one experimental group corresponds to one fast recovery diode and one row vector.

3. The fast recovery diode performance testing method based on electron irradiation according to claim 2, characterized in that: The acquisition interval division unit includes: Set the partition groups, and use the partition groups and the pre-built interval unit partition formula to calculate the interval partition unit. The interval unit partition formula is as follows: ； in, represents the interval division unit, Indicates the maximum ambient temperature or maximum operating voltage in the ambient temperature range or operating voltage range. Indicates the minimum ambient temperature or minimum operating voltage in the ambient temperature range or operating voltage range. Indicates the division into groups. represents the preset weight factor, Indicates the preset correction item, Indicates the preset denominator stability compensation amount.

4. The fast recovery diode performance testing method based on electron irradiation according to claim 3, characterized in that: The partitioning of the ambient temperature groups and the partitioning of the operating voltage groups is paired to obtain a partitioning bias condition matrix, including: Extract one ambient temperature from each of the divided ambient temperature groups, and perform the following operations on each of the extracted ambient temperatures: Pairing the ambient temperature with all the operating voltages in the divided operating voltage group to obtain a divided bias condition group set; The partition bias condition sets are summarized to obtain multiple partition bias condition sets, a blank two-dimensional matrix is ​​constructed, and multiple partition bias condition sets are imported into the blank two-dimensional matrix to obtain a partition bias condition matrix, wherein the partition bias condition matrix is ​​as follows: ； in, represents the partition bias condition matrix, Indicates the first Ambient temperature, Indicates the division of the working voltage group Working voltage, Indicates the first Ambient temperature, Indicates the division of the working voltage group Working voltage, represents a row vector.

5. The fast recovery diode performance testing method based on electron irradiation according to claim 4, characterized in that: The method uses the pre-adjusted electronic radiation device to irradiate the fast recovery diode in the initialization circuit, and monitors the irradiation of the initialization circuit to obtain temperature data, irradiation dose, voltage data and leakage current data, including: Starting the pre-adjusted electronic radiation device and recording the time of starting the pre-adjusted electronic radiation device to obtain the irradiation start time; The pre-built integrated sensor is set using the preset data acquisition frequency to obtain the control integrated sensor, wherein the integrated sensor includes: a temperature sensor, a voltage sensor and a current sensor; Performing irradiation monitoring on the initial circuit according to the start irradiation time and the control integrated sensor to obtain an initial integrated set and an initial irradiation dose, wherein the initial integrated set includes: initial temperature, initial voltage and initial current, wherein the irradiation monitoring includes: temperature monitoring, voltage monitoring and leakage current detection; When the initial irradiation dose is equal to the maximum irradiation dose gradient in the irradiation parameters, the pre-adjusted electron radiation device is turned off, and the time of turning off the pre-adjusted electron radiation device is recorded to obtain the end irradiation time; Acquire the irradiation time period based on the irradiation start time and the irradiation end time, and acquire the irradiation temperature data, the irradiation voltage data, the irradiation dose and the irradiation leakage current data according to the irradiation time period; Data processing operations are performed on the irradiation temperature data, the irradiation voltage data, and the irradiation leakage current data to obtain temperature data, voltage data, and leakage current data.

6. The fast recovery diode performance testing method based on electron irradiation according to claim 5, characterized in that: The method of predicting the service life of a fast recovery diode comprises: Obtain the unirradiated leakage current, unirradiated reverse recovery time and reverse recovery time of the fast recovery diode; Obtaining the leakage current increase ratio and the reverse recovery time change ratio based on the unirradiated leakage current, the leakage current data, the unirradiated reverse recovery time and the reverse recovery time; The service life of the fast recovery diode is predicted using the pre-built prediction service life formula, the reverse recovery time change ratio, and the leakage current increase ratio. The prediction service life formula is as follows: ； in, Indicates service life, Indicates the theoretical service life of the fast recovery diode when not irradiated. represents a natural constant, represents the irradiation dose gradient, It represents the influence coefficient of radiation dose gradient on service life, Indicates the influence coefficient of leakage current increase ratio on service life, Indicates the leakage current increase ratio, Indicates the influence coefficient of the reverse recovery time change ratio on the life, Indicates the reverse recovery time change ratio, Indicates the influence coefficient of ambient temperature on service life, Indicates the ambient temperature, Indicates the preset reference temperature, Indicates the influence coefficient of working voltage on service life, Indicates the operating voltage, Indicates the preset initial voltage.

7. The fast recovery diode performance testing method based on electron irradiation according to claim 6, characterized in that: The method of obtaining the leakage current increase ratio and the reverse recovery time change ratio based on the non-irradiated leakage current, the leakage current data, the non-irradiated reverse recovery time and the reverse recovery time includes: The leakage current increase ratio is calculated based on the non-irradiated leakage current and leakage current data, where the calculation formula for the leakage current increase ratio is as follows: ； in, Indicates leakage current data, Indicates the preset average leakage current, Indicates non-irradiated leakage current; The reverse recovery time change ratio is calculated based on the unirradiated reverse recovery time and the reverse recovery time, wherein the calculation formula of the reverse recovery time change ratio is as follows: ； in, Reverse recovery time, Indicates the preset average reverse recovery time.

8. The fast recovery diode performance testing method based on electron irradiation according to claim 7, characterized in that: The performance measurement report obtained based on the unit evaluation report set includes: Extract unit assessment reports from the unit assessment report set in sequence, and perform the following operations on each of the extracted unit assessment reports: Based on the unit evaluation report, the irradiated particle concentration, irradiation time parameters, experimental group parameters and service life parameters are obtained; If the irradiated particle concentration and the irradiation time parameters are respectively less than the preset concentration parameters and the preset time parameters, the irradiation time parameters, the experimental group parameters and the service life parameters corresponding to the unit evaluation report are confirmed as safe use condition parameters; otherwise, the irradiation time parameters, the experimental group parameters and the service life parameters corresponding to the unit evaluation report are confirmed as extreme condition parameters; The safe use condition parameters and the extreme condition parameters are summarized respectively to obtain a safe condition report set and an extreme condition report set; If there is a service life parameter less than the preset service life parameter in the safety condition report set, extract the safety condition report corresponding to the service life parameter less than the preset service life parameter, obtain the safety group to be counted, count the number of safety groups to be counted, and obtain the number of abnormalities; If the number of anomalies exceeds the preset anomaly threshold, the security group to be counted will be used as the security anomaly report group; Otherwise, the security group to be counted will be regarded as the security normal report group; The extreme life value is calculated based on the preset rated life and the pre-built life allowable fluctuation coefficient, the extreme condition reports whose service life parameters are less than the extreme life value are removed from the extreme condition report set, and the retained extreme condition reports are summarized to obtain an optimized extreme report set; The optimization parameters are obtained by using the pre-built irradiation condition comprehensive scoring formula and the optimization extreme report set. The optimization parameters are calculated by using the preset safety factor to obtain the extreme condition use threshold interval. The optimization extreme report within the extreme condition use threshold interval is confirmed as a high-quality extreme condition report, and the optimization extreme report not within the extreme condition use threshold interval is regarded as a failed high-quality extreme condition report. Summarize the safe and normal report group and the high-quality extreme condition report to obtain the initial recommended parameter report, identify and summarize the recommended experimental parameter group in the initial recommended parameter report to obtain the recommended parameter report; Summarize the failure quality extreme condition reports, safety abnormality report groups and extreme condition reports where the service life parameters are less than the extreme life value to obtain the invalid parameter report; Summarize the recommended parameter reports and invalid parameter reports to obtain the performance test report.

9. The fast recovery diode performance testing method based on electron irradiation according to claim 8, characterized in that: The method of obtaining the optimization parameters by using the pre-built irradiation condition comprehensive scoring formula and the optimization extreme report set includes: Extract one optimization extreme report set from the optimization extreme report set in turn, and perform the following operations on the extracted optimization extreme reports: The pre-built irradiation condition comprehensive scoring formula is used to evaluate the optimization extreme report and obtain the optimization evaluation value. The irradiation condition comprehensive scoring formula is as follows: ； in, represents the optimized evaluation value, Indicates the preset scaling factor, represents the concentration of irradiated particles, represents the irradiation time parameter, Indicates the service life parameter; The optimization evaluation values ​​are summarized to obtain an optimization evaluation value set, and the experimental parameter group of the optimization extreme report corresponding to the largest optimization evaluation value in the optimization evaluation value set is identified to obtain the optimization parameters.

10. A fast recovery diode performance test system based on electron irradiation, characterized in that: The system comprises: A test preparation module is used to receive a diode performance test instruction, set a bias condition interval according to the diode performance test instruction, wherein the bias condition interval includes: an ambient temperature interval and an operating voltage interval, obtain a fast recovery diode set, and obtain multiple experimental groups based on the bias condition interval and the fast recovery diode set, wherein the fast recovery diode set includes multiple identical fast recovery diodes; The experiment preparation module is used to extract the experimental groups from the multiple experimental groups in sequence, and perform the following operations on the extracted experimental groups: extract the fast recovery diodes corresponding to the experimental groups, build a test circuit according to the extracted fast recovery diodes, and initialize the test circuit to obtain an initialization circuit, and set the pre-built electronic radiation device using preset irradiation parameters to obtain a pre-adjusted electronic radiation device, wherein the irradiation parameters include: irradiation particle type and irradiation dose gradient; A data analysis module, used to irradiate the fast recovery diode in the initialization circuit by using a pre-adjusted electronic radiation device, and perform irradiation monitoring on the initialization circuit to obtain temperature data, irradiation dose, voltage data and leakage current data. If it is confirmed that the irradiation dose is equal to a preset irradiation particle value and the fast recovery diode is not damaged or burned, the service life of the fast recovery diode is predicted, the leakage current increase ratio and the leakage current curve are obtained based on the leakage current data, a visual temperature image is obtained based on the temperature data, and a voltage curve is obtained based on the voltage data; The report generation module is used to evaluate the usage parameters of the fast recovery diode according to the visualized temperature image, service life, voltage curve and leakage current curve, obtain a unit evaluation report, summarize the unit evaluation reports, obtain a unit evaluation report set corresponding to multiple experimental groups, obtain a performance measurement report based on the unit evaluation report set, and complete the fast recovery diode performance test based on electron irradiation based on the performance measurement report.

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