Multi-stage air inlet ICP etching device with adjustable outlet position

Abstract

The present application discloses a multi-stage air inlet ICP etching device with adjustable air outlet position, comprising a working chamber, a carrier, a radio frequency power supply and an air inlet mechanism, wherein the air inlet mechanism comprises a first air vent, a second air vent and a first baffle, the first air vent is provided with an air inlet channel and N primary air flow channels, the second air vent is provided with N groups of secondary air flow channels, one end of any secondary air flow channel is directly opposite to a primary air flow channel, and the other end is bifurcated to form at least two secondary air channels, the first baffle is rotatably arranged between the first air vent and the second air vent, and the first baffle is provided with N first connecting holes and N-1 second connecting holes; the final air outlet is opened on the outer peripheral wall of the air inlet mechanism, which can effectively increase the concentration of the reaction gas in the edge area of ​​the working chamber; when the deflection phenomenon occurs, the first baffle blocks the primary air flow channel at the corresponding position, so that the secondary air channel used to cover the area where the deflection phenomenon occurs no longer discharges air, which can improve the etching uniformity.

Description

Technical Field

[0001] The present application relates to the field of wafer etching technology, and in particular to a multi-stage air inlet ICP etching device with adjustable air outlet position. Background Art

[0002] Inductively coupled plasma (ICP) technology is one of the ways to achieve wafer etching. In an inductively coupled system, electromagnetic field energy is concentrated in a vacuum chamber, which can stimulate gas discharge to form plasma, so that positively charged ions bombard the wafer surface, which can remove natural oxides or fluorocarbon residues on the wafer surface, and finally etch the desired shape on the wafer surface.

[0003] Wafers obtained by ICP etching often have problems such as high etching rate and deep etching in the middle, and low etching rate and shallow etching at the edge, which leads to uneven surface treatment quality problems of the wafer. At the same time, ICP etching will also cause edge deviation, that is, the edge of the wafer is over-etched, resulting in uneven pattern edges and changes in pattern size; this phenomenon is usually caused by the inconsistency between the edge etching rate and the center etching rate. Summary of the invention

[0004] The purpose of the present application is to overcome the deficiencies in the prior art and to provide a multi-stage air inlet ICP etching device with adjustable air outlet position.

[0005] The present application provides a multi-stage air inlet ICP etching device with adjustable gas outlet position, comprising: a working chamber for providing space for wafer etching; a carrier, arranged in the working chamber, for supporting the wafer; a radio frequency power supply, for supplying power to the carrier, which can ionize the reaction gas and attract plasma to bombard the wafer after being powered on; an air inlet mechanism, for guiding the reaction gas into the working chamber; the air inlet mechanism comprises: a first air vent, which is arranged in a disc shape, and is provided with an air inlet channel and N primary air flow channels on the first air vent, the air inlet channel is arranged at the center of the first air vent and is used to connect with the gas supply equipment, any primary air flow channel extends radially, one end of which is connected with the air inlet channel, and the other end passes through the outer peripheral wall of the first air vent, and the multiple primary air flow channels are arranged in a circular array; a second air vent, which is arranged in a ring shape and is arranged outside the first air vent, and is provided with N groups of secondary air flow channels on the second air vent, and one end of any secondary air flow channel is directly opposite to one A primary airflow channel, the other end of which is bifurcated to form at least two secondary airflow channels, and the secondary airflow channels pass through the outer peripheral wall of the second ventilation piece; a first baffle is arranged in a circular ring shape and rotatably arranged between the first ventilation piece and the second ventilation piece, and the first baffle is provided with N first connecting holes and N-1 second connecting holes; wherein N is a natural number not less than 2; rotating the first baffle can switch the first baffle to the first state or the second state; when the first baffle is in the first state, the first connecting holes are connected to the primary airflow channels in a one-to-one correspondence, and the reaction gas can be blown into the working chamber through the first ventilation piece and the second ventilation piece; when the first baffle is in the second state, any second connecting hole is connected to a primary airflow channel, and there is a primary airflow channel that is blocked, and the reaction gas cannot be blown out from the blocked area, thereby reducing the reaction gas concentration and plasma concentration at the blocked area, and then reducing the etching degree of the corresponding part of the wafer.

[0006] Furthermore, after the carrier receives the wafer, the distance between the wafer and the air intake mechanism is no greater than 60 mm.

[0007] Furthermore, the multi-stage air inlet ICP etching device with adjustable air outlet position also includes: a third ventilator, which is arranged in a circular ring shape and is arranged outside the second ventilator, and the third ventilator is provided with M groups of three-level airflow channels, one end of any three-level airflow channel is opposite to a secondary airway, and the other end is branched to form at least two three-level airways, and the three-level airways run through the outer peripheral wall of the third ventilator; a second baffle, which is arranged in a circular ring shape and is rotatably arranged between the second ventilator and the third ventilator, and the second baffle is provided with M third connecting holes and M-1 fourth connecting holes; wherein M is a multiple of N; rotating the second baffle can switch the second baffle to the third state or the fourth state; when the second baffle is in the third state, the third connecting hole is connected to the secondary airway one-to-one, and the reaction gas can be fully blown into the working chamber through the first ventilator, the second ventilator and the third ventilator; when the second baffle is in the fourth state, any fourth connecting hole is connected to a secondary airway, and there is a secondary airway blocked.

[0008] Furthermore, the multi-stage air inlet ICP etching device with adjustable air outlet position also includes: a fourth air vent, which is arranged in a circular ring shape and is arranged outside the third air vent, and the fourth air vent is provided with X fourth-level air flow channels, any fourth-level air flow channel is opposite to a third-level air channel and passes through the fourth air vent; a third baffle, which is arranged in a circular ring shape and is rotatably arranged between the third air vent and the fourth air vent, and the third baffle is provided with X fifth connecting holes and X-1 sixth connecting holes; wherein X is a multiple of M; rotating the third baffle can switch the third baffle to the fifth state or the sixth state; when the third baffle is in the fifth state, the fifth connecting hole is connected to the third-level air channel one-to-one, and the reaction gas can be fully blown into the working chamber through the first air vent, the second air vent, the third air vent and the fourth air vent; when the third baffle is in the sixth state, any sixth connecting hole is connected to a third-level air channel, and there is a third-level air channel that is blocked.

[0009] Furthermore, the multi-stage air inlet ICP etching device with adjustable air outlet position also includes a mounting base plate, and the first air ventilator and the second air ventilator are fixedly arranged on the mounting base plate; an annular slide groove is also provided on the mounting base plate, and the annular slide groove is located between the first air ventilator and the second air ventilator, and the first baffle is slidably arranged in the annular slide groove.

[0010] Furthermore, the multi-stage air inlet ICP etching device with adjustable air outlet position also includes an installation cover plate, which can cooperate with the installation base plate to fix the first ventilation piece and the second ventilation piece therebetween; an annular movable hole is provided on the installation cover plate, and part of the first baffle can pass through the annular movable hole and protrude outward; when the first baffle rotates, the bottom is limited by the annular slide groove, and the top is limited by the annular movable hole.

[0011] Furthermore, the multi-stage air inlet ICP etching device with adjustable gas outlet position also includes a shielding ring, which is rotatably arranged on the mounting cover plate and is used to shield the annular movable hole, thereby preventing air leakage from the annular movable hole; the shielding ring is connected to the first shield plate, and when the first shield plate rotates, the shielding ring can rotate therewith, thereby maintaining the shielding of the annular movable hole.

[0012] Furthermore, the multi-stage air inlet ICP etching device with adjustable air outlet position also includes a rotation drive mechanism, which is used to drive the first baffle to rotate around the first ventilation piece.

[0013] Furthermore, the rotary drive mechanism of the multi-stage air inlet ICP etching device with adjustable air outlet position includes: a driving motor and a driving gear, the driving motor is used to drive the driving gear to rotate; a first driven gear, meshing with the driving gear and capable of rotating with the driving gear, and a keyway is provided on the first driven gear; a first electromagnet, arranged above the first driven gear; a card key, made of metal material and capable of being inserted into the keyway; a connecting rod, connected to the card key; wherein a card slot is provided on the first baffle; when the first baffle needs to be rotated, the first electromagnet is powered off and the adsorption of the card key is released, the card key falls and enters the keyway, the connecting rod falls into the card slot, and the first driven gear can drive the card key and the connecting rod to rotate, thereby further driving the first baffle to rotate; when the first baffle does not need to be rotated, the first electromagnet is powered on and adsorbs the card key, the card key rises and disengages from the keyway, and the connecting rod rises and disengages from the card slot.

[0014] Furthermore, the multi-stage air inlet ICP etching device with adjustable air outlet position also includes a third vent, a fourth vent, a second baffle and a third baffle; the driving gear is extended in the vertical direction and is arranged in a columnar shape; the rotary drive mechanism also includes: a second driven gear and a third driven gear, the first driven gear, the second driven gear and the third driven gear are spaced apart in the vertical direction and respectively meshed with the driving gear, and the second driven gear and the third driven gear are both provided with keyways; a second electromagnet is arranged above the second driven gear; a third electromagnet is arranged above the third driven gear; wherein the first driven gear, the second driven gear and the third driven gear are respectively provided with a set of latch keys and connecting rods; the first baffle, the second baffle and the third baffle are all provided with latch slots.

[0015] The present application provides a multi-stage air intake ICP etching device with adjustable air outlet position, comprising a working chamber, a carrier, a radio frequency power supply and an air intake mechanism, wherein the air intake mechanism comprises a first air vent, a second air vent and a first baffle, the first air vent is provided with an air intake channel and N primary air flow channels, the second air vent is provided with N groups of secondary air flow channels, one end of any secondary air flow channel is directly opposite to a primary air flow channel, and the other end is bifurcated to form at least two secondary air channels, the first baffle is rotatably arranged between the first air vent and the second air vent, and the first baffle is provided with N first connecting holes and N-1 second connecting holes; the present application can effectively improve the air flow rate by opening the final air outlet on the outer peripheral wall of the air intake mechanism. The concentration of reactive gas in the edge area of ​​the working chamber is increased, thereby ensuring the plasma concentration in the edge area, thereby improving the edge etching efficiency of the wafer and enhancing the edge etching degree of the wafer; by setting a first baffle with a first state and a second state, when the edge deviation phenomenon occurs, the first baffle blocks the primary airflow channel at the corresponding position, so that the secondary airway used to cover the area where the edge deviation phenomenon occurs no longer emits gas, which can effectively improve the etching uniformity; and because the first baffle can continuously change the positions of the first connecting hole and the second connecting hole through rotation, no matter where the edge deviation phenomenon occurs, the first baffle can block the target primary airflow channel accordingly, thereby realizing precise regulation of the plasma concentration distribution. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 A schematic diagram of the structure of a multi-stage air inlet ICP etching device with adjustable air outlet position provided in the present application;

[0017] Figure 2 A schematic diagram of the structure of the first air intake mechanism provided in this application;

[0018] Figure 3 for Figure 2 The structural exploded diagram of the air intake mechanism shown;

[0019] Figure 4 A schematic diagram of the structure of the second air intake mechanism provided in this application;

[0020] Figure 5 A schematic diagram of the structure of the third air intake mechanism provided in this application;

[0021] Figure 6 for Figure 5 The structural exploded diagram of the air intake mechanism shown;

[0022] Figure 7 A schematic diagram of the structure of the fourth air intake mechanism provided in this application;

[0023] Figure 8 A schematic diagram of the structure of the fifth air intake mechanism provided in this application;

[0024] Fig. 9 for Figure 8 Magnified view of the structure within the middle circle. DETAILED DESCRIPTION

[0025] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.

[0026] The present application provides a multi-stage air inlet ICP etching device with adjustable gas outlet position, including: a working chamber 110, used to provide space for wafer etching; a carrier 120, arranged in the working chamber 110, used to support the wafer; a radio frequency power supply, used to supply power to the carrier 120, and the carrier 120 can ionize the reaction gas and attract plasma to bombard the wafer after being powered on; an air inlet mechanism 200, used to guide the reaction gas into the working chamber 110.

[0027] During operation, the carrier 120 supports the wafer, and the reaction gas enters the working chamber 110 through the air intake mechanism 200; the RF power supply is used to provide the carrier 120 with a negative bias potential; when the reaction gas approaches the carrier 120, it will be ionized by the carrier 120, thereby generating plasma, and the positive ions are attracted by the carrier 120 and bombard the wafer, thereby etching the wafer.

[0028] In the ICP system, since the ionizing electromagnetic field is generated by the carrier 120, the air inlet mechanism 200 is often very close to the carrier 120. Figure 1 The air intake mechanism 200 is disposed in the working chamber 110 and suspended above the stage 120. The distance between the air intake mechanism 200 and the stage 120 is 60 mm. In this way, the reaction gas input into the working chamber 110 through the air intake mechanism 200 can quickly enter the electromagnetic field coverage area and achieve ionization.

[0029] Furthermore, the air intake mechanism 200 includes: a first ventilator 210, which is arranged in a disc shape, and is provided with an air intake channel 211 and N primary airflow channels 212 on the first ventilator 210, the air intake channel 211 is arranged at the center of the first ventilator 210 and is used to connect the air supply device, any primary airflow channel 212 extends radially, one end is connected to the air intake channel 211, and the other end passes through the outer peripheral wall of the first ventilator 210, and multiple primary airflow channels 212 are arranged in a circular array; a second ventilator 220, which is arranged in a ring shape and is arranged outside the first ventilator 210, and is provided with N groups of secondary airflow channels 221 on the second ventilator 220, one end of any secondary airflow channel 221 is opposite to a primary airflow channel 212, and the other end is bifurcated to form at least two secondary airflow channels, and the secondary airflow channels pass through the outer peripheral wall of the second ventilator 220; a first baffle 251, which is arranged in a ring shape and can rotate Located between the first ventilation piece 210 and the second ventilation piece 220, the first baffle 251 is provided with N first connecting holes 251a and N-1 second connecting holes 251b; wherein N is a natural number not less than 2; rotating the first baffle 251 can switch the first baffle 251 to the first state or the second state; when the first baffle 251 is in the first state, the first connecting holes 251a are connected with the primary air flow channels 212 in a one-to-one correspondence, and the reaction gas can be fully blown into the working chamber 110 through the first ventilation piece 210 and the second ventilation piece 220; when the first baffle 251 is in the second state, any second connecting hole 251b is connected with a primary air flow channel 212, and there is a primary air flow channel 212 that is blocked, and the reaction gas cannot be blown out from the blocked area, thereby reducing the reaction gas concentration and plasma concentration at the blocked area, and further reducing the etching degree of the corresponding part of the wafer.

[0030] For details, please refer to Figure 2 In the illustrated embodiment, the first ventilation member 210 is arranged in a disc shape and is surrounded by the second ventilation member 220 arranged in a ring shape. A first baffle 251 is inserted between the first ventilation member 210 and the second ventilation member 220. The first baffle 251 uses the central axis of the first ventilation member 210 as the rotation axis. When changing the state, the first baffle 251 can rotate around the first ventilation member 210.

[0031] Combined with reference Figure 3 The center of the first ventilator 210 is provided with an air inlet channel 211, which extends axially, and the upper end of which penetrates the first ventilator 210 and is used to connect to an air supply device. The first ventilator 210 is also provided with four primary airflow channels 212, which are equally spaced and radially distributed around the air inlet channel 211. Any primary airflow channel 212 extends radially, and the front end (air outlet end) penetrates the outer peripheral wall of the first ventilator 210, and the rear end (air inlet end) is connected to the air inlet channel 211.

[0032] Continue to refer to Figure 2 and Figure 3 The second ventilator 220 is provided with four groups of secondary airflow channels 221. Any secondary airflow channel 221 is arranged in a three-way shape. The front ends of the three secondary airflow channels in the same secondary airflow channel 221 penetrate the outer peripheral wall of the second ventilator 220, and the rear ends converge and face one primary airflow channel 212. The second ventilator 220 is provided with twelve secondary airflow channels in total, and the front ends of the twelve secondary airflow channels are evenly spaced along the outer peripheral wall of the second ventilator 220.

[0033] Combined with reference Figure 2 and Figure 3 The first baffle 251 is provided with four first connecting holes 251a and three second connecting holes 251b. The four first connecting holes 251a are evenly spaced along the circumferential direction. A first connecting hole 251a is provided on the same side of the three second connecting holes 251b. The spacing between each pair of second connecting holes 251b and the first connecting hole 251a is equal (it can be understood that if there are N second connecting holes 251b, then the N second connecting holes 251b are evenly spaced along the same circumferential direction, but one second connecting hole 251b is actually missing, and the remaining second connecting holes 251b form a pair with a first connecting hole 251a nearby). The design of equal spacing facilitates the rotation control of the first baffle 251.

[0034] In a specific embodiment, the first baffle 251 is in a first state, and all the secondary airflow channels 221 are unobstructed. After the reaction gas enters the air intake mechanism 200, it can be dispersed into multiple primary airflow channels 212 along the air intake channel 211, and then enter the secondary airflow channel 221 through the first connecting hole 251a, and dispersed into more secondary air channels, and finally enter the working chamber 110 at multiple angles and multiple positions along the secondary air channels.

[0035] Since the secondary air duct used as the final outlet is opened on the outer wall of the second ventilation piece 220, the reaction gas entering the working chamber 110 will be preferentially deposited in the edge area, which is beneficial to increase the reaction gas concentration in the edge area, thereby ensuring the plasma concentration in the edge area, and further improving the edge etching efficiency and enhancing the edge etching degree.

[0036] It is easy to understand that the more the number of primary airflow channels 212 is, the smaller the distance between two adjacent primary airflow channels 212 is, the better the final air outlet uniformity is, the more complete the coverage is, and the stronger the coverage is. Similarly, the more the number of secondary airflow channels branched from the rear end of the secondary airflow channel 221 is, the better the final air outlet effect is.

[0037] This application does not limit the specific value of N.

[0038] Furthermore, after the first baffle 251 is in the first state and a batch of wafers are etched, the surface of the batch of wafers is inspected to confirm the etching effect. If there is a common phenomenon of edge deviation, that is, after etching, there is a uniform over-etching of part of the edge of the wafer, the first baffle 251 can be rotated to make the first baffle 251 enter the second state, and the blocked primary airflow channel 212 points to the over-etched part; because the reaction gas cannot pass through the primary airflow channel 212, a secondary airflow channel 221 will not emit gas, so the reaction gas concentration in the edge area covered by the secondary airflow channel 221 will be reduced; the amount of gas that can be ionized nearby is reduced, which leads to a reduction in the plasma concentration in the area, thereby improving the etching degree of the wafer part located in the area.

[0039] Since the air intake mechanism 200 is close to the carrier 120, a primary airflow channel 212 is blocked, resulting in the corresponding secondary airflow channel 221 no longer venting air. The area covered by the secondary airflow channel 221 will show a significant decrease in plasma concentration, thereby effectively solving the edge deviation phenomenon.

[0040] In summary, the multi-stage air inlet ICP etching device with adjustable air outlet position provided in the present application can effectively increase the concentration of reaction gas in the edge area of ​​the working chamber 110 by opening the final air outlet on the outer peripheral wall of the air inlet mechanism 200, thereby ensuring the plasma concentration in the edge area, thereby improving the edge etching efficiency of the wafer and enhancing the edge etching degree of the wafer; further, by setting a first baffle 251 with a first state and a second state, when the edge deviation phenomenon occurs, the first baffle 251 blocks the primary air flow channel 212 at the corresponding position, so that the secondary air channel used to cover the area where the edge deviation phenomenon occurs no longer discharges air, thereby effectively improving the etching uniformity; and because the first baffle 251 can continuously change the position of the first connecting hole 251a and the second connecting hole 251b by rotation, no matter where the edge deviation phenomenon occurs, the first baffle 251 can block the target primary air flow channel 212 accordingly, thereby realizing precise control of the plasma concentration distribution.

[0041] It should be added that, in actual work, the first baffle 251 can be used to block the target primary airflow channel 212 before etching, and the target primary airflow channel 212 can be kept blocked until the etching is completed. The first baffle 251 can also be rotated at a selected node during the etching process so that the first baffle 251 blocks the target primary airflow channel 212 for a preset period of time.

[0042] In other words, the use of the first baffle 251 can be changed according to the degree of deflection, thereby achieving more diverse optimization needs.

[0043] Optionally, after the carrier 120 receives the wafer, the distance between the wafer and the air intake mechanism 200 is no greater than 60 mm.

[0044] In the ICP system, the distance control between the carrier 120 and the gas inlet mechanism 200 is very important, so that the distance is no more than 100mm, which is conducive to ensuring the high efficiency and accuracy of etching. On the one hand, the small distance design allows the reaction gas input by the gas inlet mechanism 200 to quickly enter the electromagnetic field coverage area of ​​the carrier 120, thereby reducing the loss and diffusion of the reaction gas during the transmission process, improving the utilization rate of the reaction gas, and quickly generating high-density plasma. On the other hand, the negative bias potential of the carrier 120 can attract the plasma to accelerate toward the wafer, thereby quickly bombarding the wafer surface and realizing the rapid transfer of the pattern. The small distance design ensures the energy and density of the plasma during the bombardment process, which is conducive to improving the etching uniformity and depth control.

[0045] In a specific embodiment, after the carrier 120 receives the wafer, the distance between the wafer and the air intake mechanism 200 is 40-60 mm.

[0046] Optionally, the multi-stage air inlet ICP etching device with adjustable air outlet position provided in the present application also includes: a third ventilator 230, which is arranged in a circular ring and is arranged outside the second ventilator 220, and the third ventilator 230 is provided with M groups of three-stage air flow channels 231, one end of any three-stage air flow channel 231 is directly opposite to a secondary air channel, and the other end is forked to form at least two three-stage air channels, and the three-stage air channels pass through the outer peripheral wall of the third ventilator 230; a second baffle 252, which is arranged in a circular ring and is rotatably arranged between the second ventilator 220 and the third ventilator 230, and the second baffle 252 is provided with M groups of three-stage air flow channels 231. A third connecting hole 252a and M-1 fourth connecting holes 252b; wherein M is a multiple of N; rotating the second baffle 252 can switch the second baffle 252 to the third state or the fourth state; when the second baffle 252 is in the third state, the third connecting holes 252a are connected one-to-one with the secondary air channels, and the reaction gas can be fully blown into the working chamber 110 through the first ventilation piece 210, the second ventilation piece 220 and the third ventilation piece 230; when the second baffle 252 is in the fourth state, any fourth connecting hole 252b is connected to a secondary air channel, and there is a secondary air channel that is blocked.

[0047] For details, please refer to Figure 4In the illustrated embodiment, the first ventilator 210 is provided in a disc shape and is surrounded by the second ventilator 220 provided in a ring shape, and the third ventilator 230 is provided in a ring shape and surrounds the second ventilator 220. A first baffle 251 is inserted between the first ventilator 210 and the second ventilator 220, and a second baffle 252 is inserted between the second ventilator 220 and the third ventilator 230. The second baffle 252 uses the central axis of the first ventilator 210 as a rotation axis, and when changing the state, the second baffle 252 can rotate around the first ventilator 210 and the second ventilator 220. The first baffle 251 and the second baffle 252 can rotate independently.

[0048] Continue to refer to Figure 4 , four primary airflow channels 212 are provided in the first ventilator 210; four groups of secondary airflow channels 221 are provided in the second ventilator 220, and any secondary airflow channel 221 is arranged in a three-way shape, and finally twelve (4*3) secondary airways are formed in the second ventilator 220; twelve groups of tertiary airflow channels 231 are provided in the third ventilator 230, and any tertiary airflow channel 231 is arranged in a three-way shape, and the front ends of the three tertiary airways belonging to the same tertiary airflow channel 231 pass through the outer peripheral wall of the third ventilator 230, and the rear ends converge and face one secondary airway; a total of thirty-six (12*3) tertiary airways are provided in the third ventilator 230; the front ends of the thirty-six tertiary airways are evenly spaced along the outer peripheral wall of the third ventilator 230.

[0049] At this time, the three-stage air channel is equivalent to the final air outlet of the air intake mechanism 200. The third ventilator 230 is provided, and the branched three-stage airflow channel 231 is provided in the third ventilator 230, so as to increase the number of the final air outlets of the air intake mechanism 200, thereby increasing the density of the air outlet points, enhancing the air outlet coverage effect, and optimizing the air outlet uniformity.

[0050] Combined with reference Figure 6 , twelve third communication holes 252a and eleven fourth communication holes 252b are provided on the second shielding plate 252, the twelve third communication holes 252a are evenly spaced along the circumferential direction, and a fourth communication hole 252b is provided on the same side of the eleven fourth communication holes 252b, and the spacing between each pair of fourth communication holes 252b and the third communication holes 252a is equal. The distribution form of the third communication holes 252a and the fourth communication holes 252b is similar to the distribution form of the first communication holes 251a and the second communication holes 251b, and will not be described in detail.

[0051] As can be seen from the above, by changing the state of the first baffle 251, a primary airflow channel 212 can be blocked, so that a group of secondary airflow channels 221 no longer emit air. Figure 2 In the illustrated embodiment, the first baffle 251 enters the second state, which prevents air from passing through a quarter of the area.

[0052] After the second baffle 252 is added, the air intake mechanism 200 has four air release states.

[0053] In the first state, the first baffle 251 is in the first state, and the second baffle 252 is in the third state. At this time, all the three-level gas passages are unblocked, and after the reaction gas enters the gas intake mechanism 200, it can be dispersed into multiple primary gas passages 212 along the gas intake passage 211, and then enter the secondary gas passage 221 through the first connecting hole 251a, and dispersed into more secondary gas passages, and then enter the tertiary gas passage 231 through the third connecting hole 252a, and dispersed into multiple tertiary gas passages, and finally enter the working chamber 110 at multiple angles and multiple positions along the tertiary gas passages.

[0054] The second state is that the first baffle 251 is in the second state and the second baffle 252 is in the third state. At this time, the first baffle 251 blocks one of the primary airflow channels 212, and a group of secondary airflow channels 221 opposite to the primary airflow channel 212 and a plurality of groups of tertiary airflow channels 231 opposite to the group of secondary airflow channels 221 no longer emit air. Figure 4 In the illustrated embodiment, the first baffle 251 enters the second state, which prevents air from passing through a quarter of the area.

[0055] The third type is that the first baffle 251 is in the first state and the second baffle 252 is in the fourth state. At this time, the second baffle 252 blocks one of the secondary air passages, and a group of tertiary air flow channels 231 opposite to the secondary air passage no longer emit air. Figure 4 In the embodiment shown, the second baffle 252 enters the fourth state, which can prevent one twelfth of the area from being vented. Compared with the second situation described above, using only the second baffle 252 can reduce the air control area, so as to deal with the phenomenon of a small deflection range.

[0056] The fourth type is that the first baffle 251 is in the second state, the second baffle 252 is in the fourth state, and the secondary airway blocked by the second baffle 252 is not within the range of influence of the first baffle 251. At this time, the first baffle 251 can block a primary airflow channel 212, and eventually make multiple groups of tertiary airflow channels 231 no longer emit air, while the second baffle 252 can block a secondary airway, and eventually make a group of tertiary airflow channels 231 no longer emit air. When a group of tertiary airflow channels 231 affected by the second baffle 252 is adjacent to multiple groups of tertiary airflow channels 231 affected by the first baffle 251, the air control area can be increased to cope with the phenomenon of large deviation range. When a group of tertiary airflow channels 231 affected by the second baffle 252 is spaced from multiple groups of tertiary airflow channels 231 affected by the first baffle 251, different areas can be optimized to cope with the phenomenon of multi-position deviation.

[0057] In summary, adding the third ventilator 230 can optimize the exhaust effect of the air intake mechanism 200; further adding the second baffle 25 can achieve more diverse gas distribution control, thereby solving more complex etching uniformity problems.

[0058] Optionally, the multi-stage air inlet ICP etching device with adjustable air outlet position provided in the present application further includes: a fourth ventilator 240, which is arranged in an annular shape and is arranged outside the third ventilator 230, and the fourth ventilator 240 is provided with X fourth-level air flow channels 241, and any fourth-level air flow channel 241 is directly opposite to a third-level air channel and runs through the fourth ventilator 240; a third baffle 253, which is arranged in an annular shape and is rotatably arranged between the third ventilator 230 and the fourth ventilator 240, and the third baffle 253 is provided with X fifth connecting holes 253a and X-1 sixth connecting holes 253a. through hole 253b; wherein X is a multiple of M; rotating the third baffle 253 can switch the third baffle 253 to the fifth state or the sixth state; when the third baffle 253 is in the fifth state, the fifth connecting hole 253a is connected to the three-level air channel one-to-one, and the reaction gas can be blown into the working chamber 110 through the first ventilation piece 210, the second ventilation piece 220, the third ventilation piece 230 and the fourth ventilation piece 240; when the third baffle 253 is in the sixth state, any sixth connecting hole 253b is connected to a three-level air channel, and there is a three-level air channel that is blocked.

[0059] For details, please refer to Figure 5 In the illustrated embodiment, the first ventilator 210 is provided in a disc shape and is surrounded by the second ventilator 220 provided in a ring shape, the third ventilator 230 is provided in a ring shape and surrounds the second ventilator 220, and the fourth ventilator 240 is provided in a ring shape and surrounds the third ventilator 230. A first baffle 251 is inserted between the first ventilator 210 and the second ventilator 220, a second baffle 252 is inserted between the second ventilator 220 and the third ventilator 230, and a third baffle 253 is provided between the third ventilator 230 and the fourth ventilator 240. The third baffle 253 uses the central axis of the first ventilator 210 as a rotation axis. When the state is changed, the third baffle 253 can rotate around the first ventilator 210, the second ventilator 220 and the third ventilator 230. The first baffle 251, the second baffle 252 and the third baffle 253 can rotate independently.

[0060] Continue to refer to Figure 5The first ventilator 210 is provided with four primary airflow channels 212; the second ventilator 220 is provided with four groups of secondary airflow channels 221, any of the secondary airflow channels 221 is arranged in a three-way shape, and finally twelve (4*3) secondary airways are formed in the second ventilator 220; the third ventilator 230 is provided with twelve groups of tertiary airflow channels 231, any of the tertiary airflow channels 231 is arranged in a three-way shape, and finally thirty-six (12*3) tertiary airways are formed in the third ventilator 230; the fourth ventilator 240 is provided with thirty-six fourth-level airflow channels 241, any of the fourth-level airflow channels 241 radially penetrates the fourth ventilator 240, and all the fourth-level airflow channels 241 are arranged in a circular array, and their front ends are evenly spaced along the outer peripheral wall of the fourth ventilator 240.

[0061] At this time, the fourth-stage air flow channel 241 is equivalent to the final air outlet of the air intake mechanism 200 .

[0062] Combined with reference Figure 6 , the third baffle 253 is provided with thirty-six fifth communication holes 253a and thirty-five sixth communication holes 253b, the thirty-six fifth communication holes 253a are evenly spaced along the circumferential direction, and a fifth communication hole 253a is respectively provided on the same side of the thirty-five sixth communication holes 253b, and the spacing between each pair of the sixth communication holes 253b and the fifth communication holes 253a is equal. The distribution form of the fifth communication holes 253a and the sixth communication holes 253b is similar to the distribution form of the first communication holes 251a and the second communication holes 251b, and will not be described in detail.

[0063] The third baffle 253 is added, and the air intake mechanism 200 has eight air release states.

[0064] In the first state, the first baffle 251 is in the first state, the second baffle 252 is in the third state, and the third baffle 253 is in the fifth state. At this time, all the four-stage gas flow channels 241 are unblocked, and the reaction gas can fully flow into the working chamber 110.

[0065] The second is that the first baffle 251 is in the second state, the second baffle 252 is in the third state, and the third baffle 253 is in the fifth state. At this time, the first baffle 251 blocks one of the primary airflow channels 212, and finally blocks X / N fourth-level airflow channels 241.

[0066] In the third case, the first baffle 251 is in the first state, the second baffle 252 is in the fourth state, and the third baffle 253 is in the fifth state. At this time, the second baffle 252 blocks one of the secondary air passages, and finally blocks X / M fourth-level air flow passages 241. Different from the second case, the air control area is reduced.

[0067] In the fourth case, the first baffle 251 is in the second state, the second baffle 252 is in the fourth state, the third baffle 253 is in the fifth state, and the secondary air passage blocked by the second baffle 252 is not within the influence range of the first baffle 251. In this case, the first baffle 251 and the second baffle 252 cooperate to block, so that X / N+X / M fourth-level air flow channels 241 are blocked. Different from the second case above, the air control area is increased, and multi-area optimization can be achieved.

[0068] In the fifth case, the first baffle 251 is in the first state, the second baffle 252 is in the third state, and the third baffle 253 is in the sixth state. At this time, the third baffle 253 blocks one of the third-level air passages, and finally blocks one of the fourth-level air flow passages 241. In the fifth case, the effective range of the air control area is the smallest.

[0069] The sixth type is that the first baffle 251 is in the second state, the second baffle 252 is in the third state, the third baffle 253 is in the sixth state, and the third-level air passage blocked by the third baffle 253 is not within the influence range of the first baffle 251. At this time, the first baffle 251 and the third baffle 253 cooperate to block, so that X / N+1 fourth-level air flow channels 241 are blocked.

[0070] The seventh type is that the first baffle 251 is in the first state, the second baffle 252 is in the fourth state, the third baffle 253 is in the sixth state, and the third-level air passage blocked by the third baffle 253 is not within the influence range of the second baffle 252. At this time, the second baffle 252 and the third baffle 253 cooperate to block, so that X / M+1 fourth-level air flow channels 241 are blocked.

[0071] In the eighth case, the first baffle 251 is in the second state, the second baffle 252 is in the fourth state, the third baffle 253 is in the sixth state, and the secondary airway blocked by the second baffle 252 is not within the influence range of the first baffle 251, and the tertiary airway blocked by the third baffle 253 is not within the influence range of the first baffle 251 and the second baffle 252. At this time, the first baffle 251, the second baffle 252 and the third baffle 253 cooperate to block, so that X / N+X / M+1 fourth-level airflow channels 241 are blocked. In the eighth case, the range of the optimization area is the largest.

[0072] In actual use, the air control area can be confirmed according to the offset position, and the size of the area requiring air control can be confirmed according to the offset range, and then a suitable shielding plate 251 can be selected for rotation adjustment.

[0073] In summary, further adding the fourth vent 240 and the third baffle 253 can achieve more diverse gas distribution control, thereby solving more complex etching uniformity problems.

[0074] Optionally, the multi-stage air inlet ICP etching device with adjustable outlet position provided in the present application also includes a mounting base plate 310, and the first air ventilator 210 and the second air ventilator 220 are fixedly arranged on the mounting base plate 310; an annular slide groove is also provided on the mounting base plate 310, and the annular slide groove is located between the first air ventilator 210 and the second air ventilator 220, and the first baffle 251 is slidably arranged in the annular slide groove.

[0075] For details, please refer to Figure 7 In the illustrated embodiment, the mounting base plate 310 is set in a disc shape, and the first ventilator 210 and the second ventilator 220 are fixedly set on the mounting base plate 310. A concave annular groove is also provided on the surface of the mounting base plate 310, and the first ventilator 210 is surrounded by the annular groove, and the second ventilator 220 surrounds the annular groove. The lower end of the first shield plate 251 is inserted into the annular groove. When the first shield plate 251 rotates, it can rotate in the annular groove.

[0076] A circle of annular grooves is arranged on the mounting base 310, which provides necessary space and support for the rotation of the first baffle 251. The annular grooves limit the movement trajectory of the first baffle 251, ensuring that it will not deviate from the predetermined track during the rotation process, which is beneficial to the stability and accuracy of the movement.

[0077] When the air intake mechanism 200 further includes a third ventilator 230, a fourth ventilator 240, a second baffle 252 and a third baffle 253, three groups of annular grooves are correspondingly arranged on the mounting base 310, which are used to limit the first baffle 251, the second baffle 252 and the third baffle 253 respectively.

[0078] Optionally, the multi-stage air inlet ICP etching device with adjustable outlet position provided in the present application also includes an installation cover plate 320, which can cooperate with the installation base plate 310 to fix the first ventilation piece 210 and the second ventilation piece 220 therebetween; an annular movable hole is provided on the installation cover plate 320, and part of the first baffle 251 can pass through the annular movable hole and protrude outward; when the first baffle 251 rotates, the bottom is limited by the annular slide groove, and the top is limited by the annular movable hole.

[0079] For details, please refer to Figure 7 In the illustrated embodiment, the mounting cover plate 320 can be mounted on the top of the ventilator from top to bottom, and cooperate with the mounting base plate 310 to fix the first ventilator 210 and the second ventilator 220 therebetween. A through annular movable hole is provided on the mounting cover plate 320, facing the annular slide groove. The height of the first shield plate 251 is greater than the height of the first ventilator 210 and the second ventilator 220. When the mounting cover plate 320 fixes the ventilator, the top of the first shield plate 251 can pass through the annular movable hole and be exposed to the outside, so as to be connected to the rotation control structure and can rotate under the action of the rotation control structure.

[0080] By setting the mounting base plate 310 and the mounting cover plate 320, the annular slide groove and the annular movable hole limit the first baffle 251 one above and one below, which is beneficial to the position accuracy and movement stability of the first baffle 251. At the same time, the mounting base plate 310 and the mounting cover plate 320 can also play the role of connecting the ventilator and stabilizing the air intake mechanism 200. In addition, the mounting base plate 310 and the mounting cover plate 320 can also play a certain sealing role to prevent the reaction gas from escaping from between the baffle and the ventilator.

[0081] When the air intake mechanism 200 also includes a third ventilation piece 230, a fourth ventilation piece 240, a second baffle 252 and a third baffle 253, three groups of annular movable holes are correspondingly opened on the mounting cover 320, which are respectively used to limit the three groups of baffles. The baffles can be exposed to the outside through the corresponding annular movable holes to facilitate connection with the rotation control structure.

[0082] Optionally, the multi-stage air inlet ICP etching device with adjustable air outlet position provided in the present application also includes a shielding ring 330, which is rotatably arranged on the mounting cover 320 to shield the annular movable hole, thereby preventing air leakage from the annular movable hole; the shielding ring 330 is connected to the first shield plate 251, and when the first shield plate 251 rotates, the shielding ring 330 can rotate therewith, thereby maintaining the shielding of the annular movable hole.

[0083] The shielding ring 330 can be set in a circular ring shape consistent with the shape of the annular movable hole, or can be set in any shape such as a circle, a square, etc. that can cover the annular movable hole. A rotating shaft is provided at the center of the mounting cover plate 320, and the shielding ring 330 is rotatably arranged on the mounting cover plate 320 through the rotating shaft. The shielding plate is connected to the shielding ring 330, and when the shielding plate rotates, the shielding ring 330 rotates accordingly to keep covering the annular movable hole.

[0084] In a specific embodiment, the shielding ring 330 is arranged in a circular shape, and a rotating shaft connected to the center of the mounting cover plate 320 is arranged at the center of the shielding ring 330, and the shielding ring 330 can shield the annular movable hole from bottom to top. The first shielding plate 251 is arranged below the shielding ring 330, and the top of the first shielding plate 251 is connected to the shielding ring 330. An external connection seat is arranged on the upper surface of the shielding ring 330, and the external connection seat is in the annular movable hole and is used to be connected to the rotation control structure. When the state of the first shielding plate 251 needs to be changed, the rotation control structure applies force to the external connection seat, so that the external connection seat makes an orbital motion along the annular movable hole and around the center of the mounting cover plate 320, and the external connection seat drives the shielding ring 330, and the shielding ring 330 drives the first shielding plate 251 to rotate around the center of the mounting cover plate 320.

[0085] The design of the shielding ring 330 can further enhance the sealing performance of the mounting cover plate 320 and prevent the reaction gas from escaping from the annular movable hole.

[0086] When the air intake mechanism 200 also includes a third ventilation piece 230, a fourth ventilation piece 240, a second baffle 252 and a third baffle 253, three groups of annular movable holes are correspondingly opened on the installation cover 320, and three groups of shielding rings 330 are matched therewith. The three groups of shielding rings 330 are respectively used to cover one group of annular movable holes, and each group of shielding rings 330 can independently cooperate with the baffle to rotate.

[0087] In one embodiment, the rotation control structure is implemented by manual participation.

[0088] For example, a rotation control structure such as a lever or a knob is provided outside the working chamber 110. The rotation control structure links the shield plate internally through a mechanical linkage structure (such as a connecting rod, a gear set, etc.). A worker operates the rotation control structure to rotate the shield plate, change the state of the shield plate, and block the air outlet at the desired position.

[0089] In another embodiment, the rotation control structure is implemented by an automated controller.

[0090] Specifically, the multi-stage air inlet ICP etching device with adjustable air outlet position provided in the present application also includes a rotation driving mechanism, and the rotation driving mechanism is used to drive the first baffle 251 to rotate around the first ventilation piece 210.

[0091] In one embodiment, the rotary drive mechanism uses a rotary drive member such as a rotary cylinder or a motor. The rotary drive member is connected to the first baffle 251 and can drive the first baffle 251 to rotate around the first ventilator 210 .

[0092] In another embodiment, the first baffle 251 is arranged in a circular ring shape, and a circle of teeth is arranged at the top of the first baffle 251. The rotation drive mechanism includes a motor and a gear. The gear is meshingly connected with the first baffle 251 through the teeth at the top of the first baffle 251. When the motor drives the gear to rotate, the first baffle 251 can rotate around the first ventilation piece 210 through the meshing transmission.

[0093] When the air intake mechanism 200 further includes a third ventilator 230 , a fourth ventilator 240 , a second baffle 252 and a third baffle 253 , the etching device can be provided with three sets of rotation control structures, which are respectively used to realize independent rotation of the three sets of baffles.

[0094] The present application does not limit the specific configuration of the rotation control structure.

[0095] In a specific embodiment, the rotation drive mechanism includes: a driving motor 411 and a driving gear 412, wherein the driving motor 411 is used to drive the driving gear 412 to rotate; a first driven gear 413, which is meshed with the driving gear 412 and can rotate with the driving gear 412, and a key slot 413a is provided on the first driven gear 413; a first electromagnet 421, which is arranged above the first driven gear 413; a key 422, which is made of metal material and can be inserted into the key slot 413a; a connecting rod 423, which is connected to the key 422; wherein the first baffle 251 is provided with There is a card slot 250a; when the first baffle 251 needs to be rotated, the first electromagnet 421 is powered off and the card key 422 is released from its adsorption, the card key 422 falls and enters the key slot 413a, the connecting rod 423 falls into the card slot 250a, and the first driven gear 413 can drive the card key 422 and the connecting rod 423 to rotate, and further drive the first baffle 251 to rotate; when the first baffle 251 does not need to be rotated, the first electromagnet 421 is powered on and adsorbs the card key 422, the card key 422 rises and disengages from the key slot 413a, and the connecting rod 423 rises and disengages from the card slot 250a.

[0096] For details, please refer to Figure 8 and Fig. 9 In the illustrated embodiment, the rotary drive mechanism is disposed above the air intake mechanism 200. The top of the first baffle 251 is higher than the first ventilator 210 and the second ventilator 220, and a slot 250a is provided at the top of the first baffle 251. The rotary drive mechanism also includes a mounting bracket 430, which is fixedly disposed on one side of the air intake mechanism 200. The first driven gear 413 is rotatably disposed on the mounting bracket 430 through a bearing and is suspended above the air intake mechanism 200. A key slot 413a is provided at the axis of the first driven gear 413, and the key slot 413a passes through the first driven gear 413 in the vertical direction. The connecting rod 423 is disposed in a bent shape, and a key 422 is provided at one end of the connecting rod 423 and is inserted into the key slot 413a, and the other end extends toward the slot 250a. The first electromagnet 421 is fixedly disposed on the mounting bracket 430 and is suspended above the first driven gear 413.

[0097] When the first electromagnet 421 is energized, it can absorb the card key 422, causing the card key 422 to rise with the connecting rod 423, and the card key 422 leaves the key slot 413a and disengages from the first driven gear 413. The rotation of the first driven gear 413 no longer affects the card key 422. At the same time, the connecting rod 423 leaves the card slot 250a, which can effectively prevent the connecting rod 423 from accidentally touching the first baffle 251 and causing the first baffle 251 to move accidentally.

[0098] After the first electromagnet 421 is powered off, the key 422 loses its upward attraction and falls into the key slot 413a under the influence of its own weight. At the same time, the other end of the connecting rod 423 falls into the slot 250a, and the first driven gear 413 can drive the key 422 to rotate, further driving the connecting rod 423 and the first baffle 251 to rotate.

[0099] Furthermore, the multi-stage air inlet ICP etching device with adjustable air outlet position provided in the present application further includes a third air vent 230, a fourth air vent 240, a second baffle 252 and a third baffle 253; the driving gear 412 is extended in the vertical direction and is arranged in a columnar shape; the rotation drive mechanism further includes: a second driven gear 414 and a third driven gear 415, the first driven gear 413, the second driven gear 414 and the third driven gear 415 are spaced apart in the vertical direction and are respectively connected to the driving gear 41 2 meshes with each other, a keyway 413a is provided on the second driven gear 414 and the third driven gear 415; a second electromagnet 424 is provided above the second driven gear 414; a third electromagnet 425 is provided above the third driven gear 415; wherein the first driven gear 413, the second driven gear 414 and the third driven gear 415 are respectively provided with a set of latching keys 422 and a connecting rod 423; and a latching slot 250a is provided on the first baffle 251, the second baffle 252 and the third baffle 253.

[0100] For details, please refer to Figure 8 In the illustrated embodiment, three groups of driven gears are arranged at intervals in the vertical direction, each driven gear is provided with a keyway 413a, each keyway 413a is penetrated by a connecting rod 423, and each connecting rod 423 has a key 422 at the top and a bottom end pointing to a corresponding slot 250a on the shield.

[0101] With such an arrangement, a set of drive motors 411 can be used to realize independent rotation of three sets of shutters. During debugging or etching, the drive motors 411 do not need to be stopped. The corresponding electromagnets can be controlled to start or stop the rotation of the required shutters by turning on and off power.

[0102] The above embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.

Claims

1. A multi-stage air inlet ICP etching device with adjustable air outlet position, characterized in that: include: A working chamber, used to provide space for wafer etching; A carrier, disposed in the working chamber, for supporting the wafer; A radio frequency power supply, used to supply power to the carrier, so that the carrier can ionize the reaction gas and attract plasma to bombard the wafer after being powered on; An air intake mechanism, used for guiding the reaction gas into the working chamber; The air intake mechanism comprises: A first ventilator is provided in a disc shape, and is provided with an air inlet channel and N primary air flow channels. The air inlet channel is provided at the center of the first ventilator and is used to connect to the air supply device. Any of the primary air flow channels extends radially, one end of which is connected to the air inlet channel, and the other end of which passes through the outer peripheral wall of the first ventilator. The plurality of primary air flow channels are arranged in a circular array; A second ventilator is provided in a circular ring shape and is arranged outside the first ventilator. The second ventilator is provided with N groups of secondary airflow channels. One end of any of the secondary airflow channels faces one of the primary airflow channels, and the other end is bifurcated to form at least two secondary airflow channels. The secondary airflow channels penetrate the outer peripheral wall of the second ventilator; A first baffle plate is provided in a circular ring shape and is rotatably provided between the first ventilating member and the second ventilating member, and the first baffle plate is provided with N first communicating holes and N-1 second communicating holes; Wherein, N is a natural number not less than 2; Rotating the first shutter can switch the first shutter to a first state or a second state; When the first baffle is in the first state, the first communicating holes are connected to the primary air flow channels in a one-to-one correspondence, and the reaction gas can be fully blown into the working chamber through the first ventilation piece and the second ventilation piece; When the first baffle is in the second state, any of the second connecting holes is connected to one of the first-level airflow channels, and one of the first-level airflow channels is blocked, so that the reaction gas cannot be blown out from the blocked area, thereby reducing the reaction gas concentration and plasma concentration at the blocked area, and further reducing the etching degree of the corresponding part of the wafer.

2. The multi-stage air inlet ICP etching device with adjustable air outlet position according to claim 1, characterized in that: After the carrier receives the wafer, the distance between the wafer and the air intake mechanism is no more than 60 mm.

3. The multi-stage air inlet ICP etching device with adjustable air outlet position according to claim 1, characterized in that: Also includes: A third ventilator is provided in a circular ring shape and is arranged outside the second ventilator. The third ventilator is provided with M groups of three-level airflow channels. One end of any three-level airflow channel faces one of the two-level airflow channels, and the other end is bifurcated to form at least two three-level airflow channels. The three-level airflow channels penetrate the outer peripheral wall of the third ventilator; A second baffle plate is provided in a circular ring shape and is rotatably provided between the second ventilating member and the third ventilating member, and the second baffle plate is provided with M third communicating holes and M-1 fourth communicating holes; Wherein, M is a multiple of N; Rotating the second shutter can switch the second shutter to the third state or the fourth state; When the second baffle is in the third state, the third communication holes are connected to the secondary air channels in a one-to-one correspondence, and the reaction gas can be fully blown into the working chamber through the first ventilation piece, the second ventilation piece and the third ventilation piece; When the second baffle is in the fourth state, any of the fourth communicating holes is connected to one of the secondary air passages, and one of the secondary air passages is blocked.

4. The multi-stage air inlet ICP etching device with adjustable air outlet position according to claim 3 is characterized in that: Also includes: A fourth ventilator is provided in a circular ring shape and is arranged outside the third ventilator. The fourth ventilator is provided with X fourth-level airflow channels, and any of the fourth-level airflow channels is directly opposite to one of the third-level airways and passes through the fourth ventilator; A third baffle plate is provided in a circular ring shape and is rotatably provided between the third ventilator and the fourth ventilator, and the third baffle plate is provided with X fifth communication holes and X-1 sixth communication holes; Where X is a multiple of M; Rotating the third shutter can switch the third shutter to the fifth state or the sixth state; When the third baffle is in the fifth state, the fifth communication holes are connected to the three-stage gas channels in a one-to-one correspondence, and the reaction gas can be fully blown into the working chamber through the first ventilation piece, the second ventilation piece, the third ventilation piece and the fourth ventilation piece; When the third baffle is in the sixth state, any of the sixth communicating holes is connected to one of the third-level air passages, and one of the third-level air passages is blocked.

5. The multi-stage air inlet ICP etching device with adjustable air outlet position according to any one of claims 1 to 4, characterized in that: It also includes a mounting base plate, and the first ventilator and the second ventilator are fixedly arranged on the mounting base plate; The mounting base plate is also provided with an annular slide groove, the annular slide groove is located between the first ventilation member and the second ventilation member, and the first baffle is slidably disposed in the annular slide groove.

6. The multi-stage air inlet ICP etching device with adjustable air outlet position according to claim 5, characterized in that: Also included is a mounting cover plate, the mounting cover plate being capable of cooperating with the mounting base plate to fix the first ventilator and the second ventilator therebetween; The installation cover plate is provided with an annular movable hole, and part of the first shield plate can pass through the annular movable hole and protrude outward; When the first shield plate rotates, the bottom is limited by the annular sliding groove, and the top is limited by the annular movable hole.

7. The multi-stage air inlet ICP etching device with adjustable air outlet position according to claim 6, characterized in that: It also includes a shielding ring, which is rotatably arranged on the mounting cover plate and is used to shield the annular movable hole, thereby preventing the annular movable hole from leaking air; The shielding ring is connected to the first shielding plate, and when the first shielding plate rotates, the shielding ring can rotate therewith, thereby maintaining shielding of the annular movable hole.

8. The multi-stage air inlet ICP etching device with adjustable air outlet position according to any one of claims 1 to 4, characterized in that: The invention also includes a rotation driving mechanism, wherein the rotation driving mechanism is used to drive the first shield to rotate around the first ventilation member.

9. The multi-stage air inlet ICP etching device with adjustable air outlet position according to claim 8, characterized in that: The rotary drive mechanism comprises: A driving motor and a driving gear, wherein the driving motor is used to drive the driving gear to rotate; A first driven gear meshing with the driving gear and capable of rotating along with the driving gear, wherein a keyway is provided on the first driven gear; A first electromagnet is disposed above the first driven gear; A key, made of metal material, capable of being inserted into the keyway; A connecting rod connected to the key; Wherein, a card slot is provided on the first shield plate; When the first shutter needs to be rotated, the first electromagnet is powered off and the adsorption of the key is released, the key falls and enters the key slot, the connecting rod falls into the slot, and the first driven gear can drive the key and the connecting rod to rotate, and further drive the first shutter to rotate; When the first shutter does not need to be rotated, the first electromagnet is energized to adsorb the key, the key rises and disengages from the key slot, and the connecting rod rises and disengages from the slot.

10. The multi-stage air inlet ICP etching device with adjustable air outlet position according to claim 9, characterized in that: Also includes a third ventilator, a fourth ventilator, a second baffle and a third baffle; The driving gear is extended in the vertical direction and is arranged in a columnar shape; The rotary drive mechanism further comprises: A second driven gear and a third driven gear, wherein the first driven gear, the second driven gear and the third driven gear are spaced apart in the vertical direction and mesh with the driving gear respectively, and a keyway is provided on the second driven gear and the third driven gear; A second electromagnet is disposed above the second driven gear; A third electromagnet is disposed above the third driven gear; Wherein, the first driven gear, the second driven gear and the third driven gear are respectively configured with a set of the latch key and the connecting rod; The first baffle, the second baffle and the third baffle are all provided with a card slot.

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