Method and system for preventive maintenance of semiconductor processing apparatus

Abstract

Methods and related systems useful in the field of semiconductor processing equipment. Methods disclosed herein may include cleaning a precursor line with a hot gas stream emanating from a hot end of a vortex tube.

Description

Technical Field

[0001] The present invention relates to the field of integrated circuit manufacturing, and in particular to the field of preventive maintenance of semiconductor production tools. Background Art

[0002] Many semiconductor processes use precursor chemicals. Over time, or perhaps due to human error, the chemicals condense or deposit inside gas lines or components. This creates failed particle specifications, resulting in damaged wafer products. Removing these particles can take a long time using state-of-the-art technology. Therefore, improved maintenance methods are needed. Summary of the invention

[0003] In one aspect, a system is described herein, comprising a precursor source, a process chamber, a precursor line, and a cleaning device; the precursor source comprises a precursor container; and the precursor line connects the precursor source fluid to the process chamber; wherein the cleaning device comprises a vortex tube having a hot end and a cold end, the hot end being operably connected to the precursor line to perform precursor line cleaning.

[0004] In some embodiments, the precursor line cleaning includes cleaning the precursor line with a stream of hot gas emitted from a hot end of a vortex tube.

[0005] In some embodiments, the system further comprises a controller constructed and arranged to cause the system to alternately perform a plurality of depositions and precursor line cleaning, wherein depositions from the plurality of depositions comprise at least one of atomic layer deposition and chemical vapor deposition.

[0006] In some embodiments, the system further includes a particle filter disposed downstream of the vortex tube and upstream of the precursor line.

[0007] In some embodiments, the system further includes a valve disposed downstream of the vortex tube and upstream of the precursor line.

[0008] In some embodiments, a valve is disposed downstream of the particulate filter.

[0009] In some embodiments, the valve comprises a check valve.

[0010] In some embodiments, the hot gas stream has a temperature of at least 100°C.

[0011] In some embodiments, the system further includes a clean exhaust valve constructed and arranged to open and close the precursor line, the clean exhaust valve being located downstream of the vortex tube.

[0012] In some embodiments, a clean exhaust valve is located adjacent to the process chamber.

[0013] In some embodiments, a processing chamber includes a substrate support including a substrate detector.

[0014] In some embodiments, the controller is constructed and arranged to cause the system to perform a precursor line clean when the substrate detector detects that the substrate is not present.

[0015] In some embodiments, the system further includes a heater jacket disposed about the precursor line.

[0016] In some embodiments, the heating jacket is constructed and arranged to create a gradually increasing temperature gradient from the precursor source to the processing chamber.

[0017] On the other hand, a method for cleaning a precursor line is described herein, the method comprising: providing a system comprising a precursor source containing a precursor, a processing chamber, a precursor line fluidly connecting the precursor source and the processing chamber, and a vortex tube having a hot end and a cold end, wherein the precursor line comprises particulate contaminants; and cleaning the precursor line by providing a hot gas flow to the precursor line through the vortex tube, thereby at least partially removing the particulate contaminants from the precursor line.

[0018] In some embodiments, the hot gas stream has a temperature of at least 100°C.

[0019] In some embodiments, the method further comprises heating the precursor line via a heating jacket.

[0020] In some embodiments, the system further comprises a run counter that is incremented when a process employing the precursor has been performed in the processing chamber, wherein the step of cleaning the precursor line is performed when the run counter has exceeded a predetermined value.

[0021] In some embodiments, after the step of cleaning the precursor line has been performed, the run counter is reset.

[0022] In some embodiments, the system further includes a heater jacket disposed around the precursor line, and wherein cleaning the precursor line includes heating the precursor line with the heater jacket while providing a flow of hot gas to the precursor line.

[0023] This summary is provided to introduce some concepts in a simplified form. These concepts are further described in detail in the detailed description of the example embodiments disclosed below. This summary is not intended to identify the key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figures 1 to 3 An embodiment of a system according to the present disclosure is shown.

[0025] Figure 4 An embodiment of a precursor line is shown.

[0026] Figure 5 An embodiment of the method disclosed herein is shown.

[0027] It should be understood that the elements in the drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the size of some elements in the drawings may be exaggerated relative to other elements to help improve the understanding of the illustrated embodiments of the present disclosure. DETAILED DESCRIPTION

[0028] Although certain embodiments and examples are disclosed below, those skilled in the art will appreciate that the invention extends beyond the specifically disclosed embodiments and / or uses of the invention and their obvious modifications and equivalents. Therefore, it is intended that the scope of the disclosed invention should not be limited by the specifically disclosed embodiments described below.

[0029] When the terms "downstream" and "upstream" are used in this disclosure, they refer to the relative positions of two components or objects along a gas flow. In particular, one object or component is downstream relative to another object or component in the direction of gas flow from the latter to the former. Conversely, a first object or component is upstream of a second object or component in the direction of gas flow from the first object to the second object.

[0030] When a part or object is adjacent to another part or object, the two parts may be close or adjacent. For example, the distance between the two parts can be less than 10cm, or less than 5cm, or less than 2cm, or less than 1cm, or less than 1mm, or substantially 0mm.

[0031] In the present disclosure, "gas" may include materials that are gaseous at normal temperature and pressure (NTP), evaporated solids and / or evaporated liquids, and may be composed of a single gas or a gas mixture depending on the context. Gases other than process gases, i.e., gases that are not introduced through gas distribution components, other gas distribution devices, etc., may be used, for example, to seal reaction spaces, and may include sealed gases. Precursors and reactants may be gases. Exemplary sealed gases include rare gases, nitrogen, and the like. In some cases, the term "precursor" may refer to a compound that participates in a chemical reaction that produces another compound, particularly a compound that constitutes a membrane matrix or a main skeleton of a membrane; the term "reactant" may be used interchangeably with the term precursor.

[0032] As used herein, the term "substrate" may refer to any one or more underlying materials, including any one or more underlying materials that may be modified or on which a device, circuit, or film may be formed. A "substrate" may be continuous or non-continuous; rigid or flexible; solid or porous; and combinations thereof. A substrate may be in any form, such as a powder, a plate, or a workpiece. A plate-like substrate may include wafers of various shapes and sizes. A substrate may be made of semiconductor materials, including, for example, silicon, silicon germanium, silicon oxide, gallium arsenide, gallium nitride, and silicon carbide.

[0033] For example, a substrate in powder form can be used in drug manufacturing. The porous substrate can include a polymer. Examples of workpieces can include medical devices (such as stents and syringes), jewelry, tool equipment, components for battery manufacturing (such as anodes, cathodes, or separators), or components of photovoltaic cells, etc.

[0034] The continuous substrate may extend beyond the boundaries of the processing chamber in which the deposition process occurs. In some processes, the continuous substrate may be moved through the processing chamber so that the process continues until the end of the substrate is reached. The continuous substrate may be provided from a continuous substrate feed system to allow the continuous substrate to be manufactured and output in any suitable form.

[0035] Non-limiting examples of continuous substrates may include sheets, nonwoven films, rolls, foils, meshes, flexible materials, bundles of continuous filaments or fibers (eg, ceramic fibers or polymer fibers).The continuous substrate may also include a carrier or sheet on which a non-continuous substrate is mounted.

[0036] The illustrations presented herein are not meant to be actual views of any particular material, structure, or device but are merely idealized representations used to describe embodiments of the present disclosure.

[0037] The specific embodiments shown and described are illustrations of the present invention and its best mode and are not intended to limit the scope of these aspects and embodiments in any way. In fact, for the sake of brevity, the traditional manufacturing, connection, preparation and other functional aspects of the system may not be described in detail. In addition, the connecting lines shown in the various figures are intended to represent exemplary functional relationships and / or physical connections between various elements. Many alternative or additional functional relationships or physical connections may exist in actual systems, and / or may not exist in some embodiments.

[0038] It should be understood that the configuration and / or method described herein are exemplary in nature, and these specific embodiments or examples should not be considered restrictive, because many variations are possible. The specific routine or method described herein can represent one or more of any number of processing strategies. Therefore, the various actions shown can be performed in the order shown, in other orders, or omitted in some cases.

[0039] The subject matter of the present disclosure includes all novel and nonobvious combinations and subcombinations of the various processes, systems and configurations, and other features, functions, acts and / or properties disclosed herein, and any and all equivalents thereof.

[0040] Systems, subsystems, and methods for particle elimination are described herein. The presently disclosed subject matter is particularly applicable to the field of semiconductor device processing where particle control is critical. The presently disclosed subject matter includes using a vortex tube to heat a precursor line to effectively remove particles from the precursor line.

[0041] refer to Figure 1 , embodiments of a system 100 are disclosed herein. The system 100 includes a precursor source 110, a process chamber 130, a precursor line 111, and a vortex tube 120. The precursor source 110 may include a precursor container. The precursor container may contain a precursor. Suitable precursors are known in the art, including atomic layer deposition (ALD) precursors and chemical vapor deposition (CVD) precursors. The precursor line 111 fluidly connects the precursor source 110 to the process chamber 130. The vortex tube 120 has a hot end 125 and a cold end 126. The hot end 125 is operably, i.e., fluidically connected to the precursor line 111. Therefore, precursor line cleaning can be performed by the vortex tube 120. Precursor line cleaning can include cleaning the precursor line with a hot gas flow emitted from the hot end of the vortex tube. With the help of a hot gas flow, the precursor line can be cleaned efficiently and time-savingly. In contrast, attempting to clean the precursor line by alternately passing a stream of cold gas through the precursor line and then evacuating it (eg, at room temperature) may take from several hours to several days without guaranteeing that the particle counts are within specification.

[0042] Thus, a system is described herein, comprising a precursor source, a processing chamber, a precursor line, and a cleaning device. The precursor source may include a precursor container. The precursor container may contain a precursor. The precursor line may connect the precursor source fluid to the processing chamber. The cleaning device may include a vortex tube having a hot end and a cold end. The hot end may be operably connected to the precursor line to perform precursor line cleaning.

[0043] In some embodiments, the vortex tube 120 may include a hot end 125 and a cold end 126. The hot end 125 may be fluidly connected to the precursor line 111 via a hot gas line 121. The cold end 126 may be fluidly connected to a cold outlet 150 via a cold outlet line 151. Pressurized gas may be supplied to the vortex tube via a gas inlet 140 and a gas inlet line 141.

[0044] In some embodiments, the system 100 further includes a controller 200. The controller 200 may be constructed and arranged to cause the system 100 to alternately perform a plurality of depositions and precursor line cleanings.

[0045] In some embodiments, the depositing from the plurality of depositions includes at least one of atomic layer deposition and chemical vapor deposition.

[0046] After passing through the precursor line 111, the hot gas flow can be removed from the system 100 by any suitable means. For example, the hot gas flow can be removed from the system 100 through the reaction chamber exhaust line 131.

[0047] Reference Figure 2 describing further embodiments of the system according to the present disclosure, Figure 2 Another embodiment of the system 100 as described herein is specifically shown. Figure 2 The system 100 of the embodiment includes Figure 1 The system 100 of the embodiment of the present invention may further include a plurality of additional features. In particular, in some embodiments, the system 100 further includes a particle filter 160. The particle filter 160 may be located downstream of the vortex tube 120 and upstream of the precursor line 111. Suitable particle filters include woven or non-woven heat-resistant fabrics, such as metal or ceramic felts. Suitable metal felts include stainless steel felts. Suitable ceramic felts include alumina felts.

[0048] In some embodiments, the reaction chamber exhaust device 180 can receive exhaust gas from the process chamber 130 through the reaction chamber exhaust line 131 .

[0049] In some embodiments, the system 100 further includes a valve 170. The valve 170 may be disposed downstream of the vortex tube 120 and upstream of the precursor line 111. In some embodiments, the valve 170 includes a check valve. Suitably, the valve 170 may be disposed downstream of the particle filter 160. Therefore, the particle filter 160 may protect the valve 170 from particles, which may extend its service life.

[0050] In some embodiments, the particle filter 160 and the valve 170 can be fluidly connected via a post-particle section 161, which can be or include a section of pipe. In some embodiments, the particle filter 160 can be fluidly connected to the hot end 125 via a hot gas line 121, which can be or include a section of pipe. In some embodiments, the valve 170 can be fluidly connected to the precursor line 111 via a post-valve section 171.

[0051] After passing through precursor line 111, the hot gas stream can be removed from system 100 by any suitable means. For example, the hot gas stream can be removed from system 100 through reaction chamber exhaust 180 via reaction chamber exhaust line 131.

[0052] In some embodiments, the hot gas stream has a temperature of at least 100° C. For example, the hot gas stream can have a temperature of at least 100° C. to at most 1000° C., or at least 100° C. to at most 200° C., or at least 200° C. to at most 500° C., or at least 500° C. to at most 1000° C. In some embodiments, the hot gas stream has a temperature of about 200° C.

[0053] refer to Figure 3 A further embodiment of a system according to the present disclosure is described, Figure 3 Another embodiment of the system 100 as described herein is specifically shown. Figure 2 The system 100 of the embodiment includes Figure 1 The system 100 may include features of the system 100 of the embodiment of the present invention, and may further include a plurality of additional features. The system 100 may further include a clean exhaust valve 190, which may be constructed and arranged to open and close the precursor line 111, and the clean exhaust valve 190 may be located downstream of the vortex tube 120. Suitably, the clean exhaust valve 190 may be located adjacent to the process chamber 130.

[0054] In some embodiments, the processing chamber includes a substrate support 135. The substrate support 135 may include a substrate detector 136. Suitable substrate supports may include a pedestal, a base, a wafer boat, etc. Some substrate supports such as a pedestal or a base may hold one substrate. Some substrate supports such as a wafer boat may contain multiple substrates. Suitable substrate detectors include inductive detectors, capacitive detectors, and piezoelectric sensors.

[0055] In some embodiments, the controller 200 is constructed and arranged to cause the system 100 to perform a precursor line clean when the substrate detector 136 detects that a substrate is not present.

[0056] In some embodiments, the system 100 includes a heater jacket 420 that can be disposed around the precursor line 410. Figure 4 To explain.

[0057] In some embodiments, the heating jacket is constructed and arranged to generate a gradually increasing temperature gradient from the precursor source to the processing chamber. This can be achieved, for example, by using a segmented heating jacket that consumes different amounts of electrical energy at different locations in the precursor line. In some embodiments, cleaning the precursor line includes heating the precursor line by the heating jacket while providing a hot gas flow to the precursor line via a vortex tube.

[0058] In some embodiments, the system further comprises a run counter. For example, the run counter may be included in the controller. Suitably, the run counter may comprise a memory for storing an integer. The integer may be incremented when a process employing a precursor has been performed in the processing chamber. In such an embodiment, when the run counter exceeds a predetermined value, a step of cleaning the precursor line is performed. Thus, the precursor line may be automatically cleaned periodically to ensure that the amount of particulate matter in the precursor line remains under control.

[0059] In some embodiments, the controller may be constructed and arranged to reset the run counter after the step of cleaning the precursor line has been performed. Thus, the controller may include a memory for storing a predetermined number of runs, and the precursor line may be automatically cleaned by the vortex tube whenever the run counter reaches or exceeds the predetermined number of runs.

[0060] After passing through the precursor line 111, the hot gas flow can be removed from the system 100 by any suitable means. For example, the hot gas flow can be removed from the system 100 through the reaction chamber exhaust 180 via the reaction chamber exhaust line 131. Additionally or alternatively, the hot gas flow or a portion thereof can be removed from the system 100 through a clean exhaust valve 190. The clean exhaust valve 190 can be included in or on the precursor line 111 and can be located upstream of the process chamber 130. The clean exhaust valve 190 can be fluidly connected to a clean exhaust 195 via a clean exhaust pipe 191.

[0061] Also described herein is a method for cleaning a precursor line. The method may include the steps of providing a system, such as a system according to an embodiment of the present disclosure. The system may include a precursor source containing a precursor, a processing chamber, a precursor pipeline fluidly connecting the precursor source and the processing chamber, and a vortex tube having a hot end and a cold end. The precursor line contains contaminants, such as particulate contaminants. In other words, the precursor line may include particles, such as precursor particles, or partially or completely decomposed precursor particles. Cleaning the precursor line may include providing a hot gas flow to the precursor line through a vortex tube. Therefore, contaminants, such as particulate contaminants, can be at least partially removed from the precursor line.

[0062] In some embodiments, the presently described methods can include heating the precursor line via a heating jacket.

[0063] In some embodiments, the hot gas flow includes, consists of, or consists essentially of an inert or substantially inert gas. Suitable gases include rare gases such as He, Ne, Ar, Kr, and Xe. In some embodiments, the hot gas flow includes, consists of, or consists essentially of N2.

[0064] In some embodiments, the hot gas stream comprises, consists of, or consists essentially of a reactive gas. Suitable gases include oxygen-containing gases, such as O2 and H2O. In some embodiments, the hot gas stream comprises, consists of, or consists essentially of H2. In some embodiments, the hot gas stream comprises, consists of, or consists essentially of synthetic gas. Synthetic gas may refer to a mixture of H2 in N2, such as 5 to 50 mole % H2 in N2.

[0065] In some embodiments, the presently disclosed methods may include evacuating the precursor line after purging the precursor line with a hot gas stream. In some embodiments, the presently disclosed methods may include purging the precursor line with a hot gas stream and evacuating the precursor line. Figure 5 Evacuating the precursor line may include removing a purge gas from the precursor line by a vacuum pump.

Claims

1. A system comprising a precursor source, a processing chamber, a precursor pipeline and a cleaning device; - the precursor source comprises a precursor container; and - a precursor line fluidly connects a precursor source to a process chamber; in, The cleaning apparatus includes a vortex tube having a hot end and a cold end, the hot end being operably connected to the precursor line to perform precursor line cleaning.

2. The method according to claim 1, wherein: The precursor line cleaning includes cleaning the precursor line with a hot gas flow emitted from a hot end of the vortex tube.

3. The system of claim 1 , further comprising a controller constructed and arranged to cause the system to alternately perform a plurality of depositions and the precursor line cleaning, wherein a deposition from the plurality of depositions comprises at least one of atomic layer deposition and chemical vapor deposition. 4 . The system according to claim 1 , further comprising a particle filter disposed downstream of the vortex tube and upstream of the precursor line. 5 . 5 . The system according to claim 1 , further comprising a valve disposed downstream of the vortex tube and upstream of the precursor line.

6. The system according to claim 5, wherein: The valve is disposed downstream of the particulate filter.

7. The system according to claim 5 or 6, wherein: The valve comprises a check valve.

8. A system according to any one of claims 2 to 7, wherein: The hot gas stream has a temperature of at least 100°C.

9. The system of any one of claims 1 to 8, further comprising a clean exhaust valve constructed and arranged to open and close the precursor line, the clean exhaust valve being located downstream of the vortex tube.

10. The system according to claim 9, wherein: The clean exhaust valve is located adjacent to the process chamber.

11. The system according to any one of claims 1 to 11, wherein: The processing chamber includes a substrate support including a substrate detector.

12. The system according to claim 11, wherein: The controller is constructed and arranged to cause the system to perform a precursor line clean when the substrate detector detects that a substrate is not present.

13. The system of any one of claims 11 to 12, further comprising a heater jacket disposed around the precursor line.

14. The system according to claim 13, wherein: The heating jacket is constructed and arranged to generate a gradually increasing temperature gradient from the precursor source to the process chamber.

15. A method for cleaning a precursor line, the method comprising: - providing a system comprising a precursor source comprising a precursor, a process chamber, a precursor line fluidly connecting the precursor source and the process chamber, and a vortex tube having a hot end and a cold end, wherein the precursor line comprises a particle contaminant; and - Cleaning the precursor line by providing a stream of hot gas to the precursor line via a vortex tube, thereby at least partially removing particulate contaminants from the precursor line.

16. The method according to claim 15, wherein: The hot gas stream has a temperature of at least 100°C.

17. The method of claim 15 or 16, further comprising heating the precursor line by a heating jacket.

18. The method according to any one of claims 15 to 17, wherein: The system further includes a run counter that is incremented when a process employing the precursor has been performed in the processing chamber, wherein the step of cleaning the precursor line is performed when the run counter has exceeded a predetermined value.

19. The method according to claim 18, wherein: After the step of cleaning the precursor line has been performed, the run counter is reset.

20. The method according to any one of claims 15 to 19, wherein: The system also includes a heater jacket disposed around the precursor line, and wherein cleaning the precursor line includes heating the precursor line via the heater jacket while providing a flow of hot gas to the precursor line.

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