Diamond substrate and method of processing the same, diamond support and method of preparing the same

Abstract

The application relates to a diamond substrate and a processing method thereof, and a diamond load and a manufacturing method thereof, wherein the processing method of the diamond substrate comprises the following steps: providing a diamond sheet with opposite first and second surfaces; using a laser cutting method to open a through groove with a predefined shape on the diamond sheet, the through groove penetrating through the diamond sheet from the first surface to the second surface to obtain a grooved substrate; and using a diamond grinding tool to be inserted into the through groove, so that at least one grinding surface of the diamond grinding tool is in close contact with the side wall of the through groove to grind the side wall of the through groove to obtain the diamond substrate. The application can efficiently remove graphite slag attached to the side wall of the diamond through groove, and has the advantages of simple process, simple use, low cost, easy popularization, effective improvement of the adhesion of the diamond side film, improvement of the stability of the rear-end product (for example, the diamond load), no production limitation by environmental evaluation, high popularization, and good economic value and popularization value.

Description

Technical Field

[0001] This application relates to the field of diamond-based thin-film circuit technology, and in particular to a diamond substrate and its processing method, a diamond load and its preparation method. Background Technology

[0002] Diamond, with its low dielectric constant (3.5), extremely high thermal conductivity (5 times that of copper, 8 times that of aluminum, and 10 times that of aluminum nitride), high temperature resistance, and high breakdown electric field, is the best material for fabricating high-power, high-frequency radio frequency devices, and has great application prospects in microwave communication, 5G communication base stations, radar, and other equipment. A load is a passive device mainly used to absorb power from radio frequency or microwave systems, reducing damage to the equipment from reflected waves. The reliability of a load is mainly reflected in its power handling capacity. Due to the aforementioned advantages, diamond loads, compared with traditional AlN and BeO substrate materials, exhibit greater power capacity and higher frequency under the same testing conditions.

[0003] Diamond loads structurally consist of a front metal layer, a front resistive layer, a back metal layer, and a side metal layer. The side metal layer serves to conduct the metal between the back and front layers, ensuring good grounding. The method for forming the side metal layer involves cutting grooves in the diamond substrate to expose the side surface before sputtering. However, diamond is extremely hard and cannot be cut using traditional abrasive wheels; only laser cutting can be used. But laser cutting converts SP3 phase diamond into SP2 phase graphite, producing graphite slag. This slag residue on the sidewalls has extremely strong water vapor adsorption and adhesion, making it very difficult to remove. Graphite has no adhesion to the sputtered metal layer, and water vapor will overflow at high temperatures. This causes blistering and film detachment after thermal testing following sputtering the diamond sidewalls, severely affecting the reliability and lifespan of the diamond load. Effectively cleaning the laser-grooved sides of the diamond and improving the adhesion of the side film has become a key technical challenge for current diamond-coated products (such as diamond loads and diamond attenuators). Summary of the Invention

[0004] The main objective of this application is to provide a diamond substrate and its processing method, as well as a diamond load and its preparation method, to solve the problem that graphite slag on the diamond substrate is difficult to clean during the traditional diamond substrate manufacturing process.

[0005] To achieve the above objectives, the first aspect of this application provides a method for processing a diamond substrate, comprising the following steps:

[0006] Provide diamond sheets with opposing first and second faces;

[0007] A predefined groove is cut into the diamond sheet using a laser cutting method. The groove runs through the diamond sheet from the first surface to the second surface to obtain a slotted substrate.

[0008] A diamond grinding tool is inserted into the through groove, and at least one grinding surface of the diamond grinding tool is in close contact with the side wall of the through groove to grind the side wall of the through groove, thereby obtaining the diamond substrate.

[0009] Further, the step of using a diamond grinding tool to penetrate into the through groove, so that at least one grinding surface of the diamond grinding tool is in close contact with the sidewall of the through groove to grind the sidewall of the through groove and obtain the diamond substrate, includes:

[0010] Select a diamond grinding tool that matches the size of the through groove. The diamond grinding tool includes a diamond saw blade, which has two opposing grinding surfaces with diamond particles disposed on the grinding surfaces.

[0011] The diamond saw blade is connected to the grinder, and the diamond saw blade is vertically inserted into the through groove from the first side, so that at least one of the grinding surfaces is in close contact with the side wall of the through groove.

[0012] The grinding machine is started, and the diamond saw blade rotates under the drive of the grinding machine. The grinding surface grinds the side wall of the through groove until the grinding is completed, and the diamond substrate is obtained.

[0013] Further, the step of starting the grinding machine, rotating the diamond saw blade under the drive of the grinding machine, and grinding the sidewall of the through groove until the grinding is completed to obtain the diamond substrate includes:

[0014] Start the grinding machine and control its no-load speed to not exceed 800 r / min;

[0015] At least one of the grinding surfaces of the diamond saw blade is reciprocated several times to grind the sidewall of the through groove until the sidewall of the through groove is completely ground.

[0016] Pause the operation of the grinding machine, flip the slotted substrate, and vertically insert the diamond saw blade into the through groove from the second side, so that at least one grinding surface is in close contact with the side wall of the through groove.

[0017] Restart the grinder and control its no-load speed to not exceed 800 r / min;

[0018] At least one grinding surface of the diamond saw blade is used to reciprocate grinding the sidewall of the through groove several times until the sidewall of the through groove is completely ground, thus obtaining the diamond substrate.

[0019] Furthermore, the predefined shape of the through-slot includes a closed pattern projected onto the first or second surface, the closed pattern comprising a central portion and end portions disposed at both ends of the central portion, the central portion being rectangular and the end portions being arc-shaped; wherein,

[0020] The middle part is a straight line segment. At the intersection of the arc and the straight line segment, the angle between the tangent of the arc and the straight line segment is α. The angle α satisfies the following condition: 0°≤α<90°; preferably, the angle α satisfies the following condition: 30°≤α≤60°.

[0021] Furthermore, the predefined shape of the through groove includes a trapezoidal cross-sectional shape, and the cross-section of the through groove is a surface perpendicular to the first surface or the second surface.

[0022] Furthermore, the diamond grinding tool includes a diamond saw blade, which includes two conical or frustum-shaped grinding surfaces symmetrically arranged along the central axis of the diamond saw blade, and diamond particles are disposed on the grinding surfaces; the generatrix of the conical or frustum-shaped surface forms a first angle with the central axis, and when the diamond saw blade is inserted into the through groove, the waistline of the trapezoid forms a second angle with the central axis, and the first angle and the second angle are equal.

[0023] Furthermore, after the step of creating a predefined groove on the diamond sheet using a laser cutting method, the groove penetrating the diamond sheet from the first surface to the second surface to obtain a slotted substrate, the method further includes:

[0024] The slotted substrate is first cleaned to remove powder particles;

[0025] The slotted substrate is then cleaned a second time to remove organic oil stains;

[0026] The slotted substrate is then cleaned a third time to remove water.

[0027] The dehydrated slotted substrate is dried by blowing it with inert gas.

[0028] Furthermore, after the step of drying the dehydrated slotted substrate with inert gas, the method further includes:

[0029] The dried slotted substrate is placed in an oven to dry, thus obtaining the diamond substrate.

[0030] Furthermore, the step of using a diamond grinding tool to penetrate into the through groove, so that at least one grinding surface of the diamond grinding tool is in close contact with the sidewall of the through groove to grind the sidewall of the through groove and obtain the diamond substrate, further includes:

[0031] A diamond grinding tool is inserted into the through groove, and at least one grinding surface of the diamond grinding tool is in close contact with the side wall of the through groove to grind the side wall of the through groove.

[0032] The polished grooved substrate is immersed in an acid solution at 100-110°C for several tens of minutes.

[0033] The slotted substrate is removed, rinsed with deionized water, and then dried with inert gas to obtain the diamond substrate.

[0034] Further, the step of using a diamond grinding tool to penetrate into the through groove, so that at least one grinding surface of the diamond grinding tool is in close contact with the sidewall of the through groove to grind the sidewall of the through groove and obtain the diamond substrate, includes:

[0035] A diamond grinding tool is inserted into the through groove, and at least one grinding surface of the diamond grinding tool is in close contact with the side wall of the through groove to grind the side wall of the through groove.

[0036] Using a toothbrush dipped in toothpaste, place the polished slotted substrate on a flat surface and repeatedly wipe the areas near the slot on the first and second sides of the polished slotted substrate.

[0037] After wiping, the grooved substrate is placed in deionized water and repeatedly cleaned with a toothbrush without toothpaste to obtain the diamond substrate.

[0038] The second aspect of this application provides a diamond substrate prepared by the diamond substrate processing method described above.

[0039] A third aspect of this application provides a method for preparing a diamond load, which uses the aforementioned diamond substrate to prepare the diamond load, and includes the following steps:

[0040] With the second side of the diamond substrate facing upward, a first film layer, including a metal film layer, is sputtered onto the second side, serving as the first substrate.

[0041] With the first surface of the first substrate facing upwards, a second film layer is sputtered onto the first surface. The second film layer includes a resistive film layer and a metal film layer, serving as the second substrate.

[0042] The first and second films are electroplated to thicken the metal film layer, which serves as the third substrate;

[0043] The third substrate is photolithographically etched to pattern the resistive film layer, thus forming the fourth substrate;

[0044] The resistive film layer of the fourth substrate is subjected to thermal oxidation and resistance adjustment, and then subjected to thermal testing at a preset temperature for several minutes to tens of minutes to obtain the fifth substrate;

[0045] The fifth substrate is laser scribing cut to obtain the diamond load.

[0046] A fourth aspect of this application provides a diamond load, characterized in that it is prepared by the above-described method for preparing diamond loads.

[0047] The diamond substrate and its processing method, as well as the diamond load and its preparation method provided in this application, involve using laser cutting to create predefined grooves on a diamond sheet to be processed, and then using a diamond abrasive grinding tool to penetrate into the grooves and grind the sidewalls of the grooves to obtain the diamond substrate. This physical grinding method efficiently removes graphite slag and other deposits adhering to the sidewalls of the diamond grooves. The process is simple, easy to use, low-cost, and easily adopted. This effectively improves the adhesion of the film layer on the sidewalls of the diamond substrate grooves, enhancing the stability of downstream products (such as diamond loads). Furthermore, production is not subject to environmental impact assessment restrictions, has high applicability, and possesses significant economic and promotional value. Attached Figure Description

[0048] Figure 1 A flowchart illustrating a method for processing a diamond substrate according to an embodiment of this application;

[0049] Figure 2 A schematic diagram of the through-groove shape of a diamond substrate provided in an embodiment of this application;

[0050] Figure 3 This is a schematic cross-sectional view of a diamond saw blade placed into a slot in a diamond substrate, according to an embodiment of this application.

[0051] Figure 4 This is a schematic cross-sectional view of a diamond saw blade placed into a through slot in a diamond substrate, according to another embodiment of this application.

[0052] Figure 5 A flowchart illustrating a method for preparing a diamond load according to an embodiment of this application;

[0053] Figure 6 This is a cross-sectional structural diagram of a diamond load provided in an embodiment of this application.

[0054] Figure 7 The images show a comparison of the sidewalls of the diamond substrate before and after polishing in Embodiment 1 of this application, where (a) is before polishing and (b) is after polishing.

[0055] Figure 8 The images show a comparison of diamond loads in Embodiment 1 and Comparative Example 1 after thermal testing, wherein (a) is a plan view of the diamond load in Comparative Example 1, (b) is a partial enlarged view of the diamond load in Comparative Example 1, (c) is a plan view of the diamond load in Embodiment 1, and (d) is a partial enlarged view of the diamond load in Embodiment 1.

[0056] The realization of the purpose, functional features and advantages of this application will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation

[0057] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains; the terminology used herein in the specification of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application; the terms "comprising" and "having," and any variations thereof, in the specification, claims, and foregoing drawings of this application, are intended to cover non-exclusive inclusion. The terms "first," "second," etc., in the specification, claims, or foregoing drawings of this application are used to distinguish different objects, not to describe a particular order.

[0058] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0059] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings.

[0060] Reference Figure 1 This application discloses a method for processing a diamond substrate, comprising the following steps:

[0061] S1: Provides a diamond sheet with opposing first and second faces;

[0062] S2: A predefined groove is made on the diamond sheet using a laser cutting method. The groove runs through the diamond sheet from the first side to the second side to obtain a slotted substrate.

[0063] S3: Using a diamond grinding tool, insert it into the through groove and grind the side wall of the through groove so that at least one grinding surface of the diamond grinding tool is in close contact with the side wall of the through groove to obtain a diamond substrate.

[0064] In this embodiment, the diamond sheet is prepared by CVD (chemical vapor deposition). The thickness of the diamond sheet can be selected according to the specific application requirements, and this application does not impose any special restrictions on it. Taking the fabrication of a diamond load using a diamond substrate as an example, the thickness of the diamond sheet can be selected as 0.2-0.5 mm, with common thicknesses being 0.254 mm or 0.381 mm. It is understood that the first side of the diamond sheet corresponds to the first side of the slotted substrate and also to the first side of the diamond substrate, and the second side of the diamond sheet corresponds to the second side of the slotted substrate and also to the second side of the diamond substrate. Furthermore, other substrates or loads named for ease of description in this application specification, in the description of the first or second side, all correspond to the first or second side of the diamond sheet (substrate), respectively.

[0065] In step S2 above, the shape of the through-slot can be adjusted according to the needs of specific application scenarios. For example, it can be a straight slot with a width of 0.2-0.25mm. If the through-slot is too wide, it will affect the coating area of ​​the diamond substrate and reduce its utilization rate. If the through-slot is too narrow, it will make laser cutting difficult, and it will be difficult to deposit the metal film layer on the side during sputtering, resulting in poor contact between the first and second surfaces. Therefore, limiting the width of the through-slot to 0.2-0.25mm facilitates laser cutting, is beneficial for depositing the metal film layer on the sidewall of the through-slot, and can also improve the utilization rate of the diamond substrate and save on the manufacturing cost of the subsequent diamond load. There can be multiple through-slots, and the specific number and the spacing between adjacent through-slots depend on different product sizes.

[0066] In some embodiments, the horizontal distance between both ends of the through-groove and the edge of the diamond substrate is greater than or equal to 3.5 mm. This is because slotting too close to the edge can easily cause the diamond substrate to crack. By ensuring that the horizontal distance between both ends of the through-groove and the edge of the diamond substrate is greater than or equal to 3.5 mm (e.g., 3.5 mm, 4 mm, or 4.5 mm), cracks at the edges of the diamond substrate can be effectively prevented during or after laser cutting. The laser cutting uses a laser cutting machine, such as an ultraviolet nanosecond laser cutting machine or an infrared laser cutting machine.

[0067] In some embodiments, as an optional step after step S2, after obtaining the grooved substrate from the laser-cut diamond sheet, the grooved substrate can be repeatedly wiped back and forth with a lint-free cloth soaked in alcohol at least twice. After wiping, it should be placed in an alcohol bath and ultrasonically sonicated for at least 10 minutes, dried with nitrogen, and then removed before proceeding to step S3. This can initially remove some of the slag formed on the substrate during laser cutting, preventing some slag from interfering with the diamond grinding process, thus improving the grinding effect and saving subsequent grinding time.

[0068] In step S3 above, the aforementioned diamond grinding tool has a grinding surface. The grinding surface is placed into the through groove, so that it is in close contact with the side of the through groove, thereby grinding the side of the through groove. There can be one or more grinding surfaces, such as two. For a diamond grinding tool with one grinding surface, the grinding surface can be first placed in close contact with one side of the through groove, and after grinding, the direction can be adjusted to grind the other side. For a diamond grinding tool with two opposing grinding surfaces, a suitable diamond grinding tool thickness can be selected so that both grinding surfaces are in close contact with both sides of the through groove simultaneously, achieving simultaneous grinding of both sides. It is understood that for a diamond grinding tool with two opposing grinding surfaces, only one side can be ground at a time. Preferably, the thickness of the diamond grinding tool satisfies the following relationship: 1 / 2 of the groove width ≤ the thickness of the diamond grinding tool ≤ the groove width. More preferably, the thickness of the diamond grinding tool is equal to the groove width, which can ensure that the groove sidewall and the grinding surface are in full contact and have a good grinding effect. Here, the thickness of the diamond grinding tool refers to the thickness of the area where the diamond saw blade penetrates into the groove.

[0069] In this embodiment, the slotted substrate after laser grooving is prone to residual graphite slag at the grooving site. For the graphite slag remaining on the first and / or second surfaces of the slotted substrate, various removal methods are disclosed in the prior art, such as full-surface grinding and surface wiping. However, the prior art has not found that multiple residual graphite slags are actually formed on the inner wall of the slot during processing, and the graphite slag in the slot is difficult to remove using existing methods. This embodiment removes the graphite slag adhering to the slot by grinding the inner wall of the slot. The process is simple, not only cleaning the graphite slag adhering to the slot after laser grooving, but also being simple to use, low in cost, and easy to popularize. This effectively improves the adhesion of the film layer on the side of the diamond slot and enhances the stability of downstream products (e.g., diamond loads).

[0070] In some embodiments, step S3, in which a diamond grinding tool is inserted into the through groove so that at least one grinding surface of the diamond grinding tool is in close contact with the sidewall of the through groove to grind the sidewall of the through groove and obtain the diamond substrate, specifically includes the following steps:

[0071] S301: Select a diamond grinding tool that matches the size of the through groove. The diamond grinding tool includes a diamond saw blade, which has two opposing grinding surfaces with diamond particles on the grinding surfaces.

[0072] S302: Connect the diamond saw blade to the grinder and vertically insert the diamond saw blade into the through groove from the first side, so that at least one grinding surface is in close contact with the side wall of the through groove.

[0073] S303: Start the grinder. The diamond saw blade rotates under the drive of the grinder. The grinding surface grinds the side wall of the through groove. After grinding is completed, a diamond substrate is obtained.

[0074] In this embodiment, in step S301, the diamond saw blade can be an existing commercially available product or a customized product with specific specifications. For commercially available products, selectable thicknesses include 0.15mm, 0.2mm, 0.25mm, and 0.3mm, thus matching the dimensions of the through-slot with a width of 0.2-0.25mm. The diamond saw blade surface is electroplated with diamond particles, which can effectively remove graphite slag from the sides of the through-slot through friction, while causing almost no wear on the diamond substrate itself. Optionally, the outer diameter of the diamond saw blade is controlled to be greater than or equal to the depth of the through-slot. For example, in a specific example, an existing diamond saw blade with a thickness of 0.2mm, an outer diameter of 16mm, and an inner diameter hole of 3mm is selected. For customized products with specific specifications, the shape and specifications of the diamond saw blade are customized according to the shape of the through hole.

[0075] In step S302 above, the slotted substrate is placed on a soft protective pad, such as a sponge, or it can be held by hand or placed on two pads of equal height to create the slot. Then, a hand-held grinder is used. The grinder includes a conventional grinder as well as a low-speed power tool such as an electric screwdriver. A portion of the diamond saw blade is placed into the slot. Typically, the diamond saw blade is circular, and the portion placed into the slot is usually smaller than a semicircle.

[0076] In step S303 above, the sidewall of the channel usually needs to be ground back and forth several times, for example, 3-10 times, until no more black substance falls onto the protective pad (e.g., white sponge), or the sidewall of the channel is observed to be white and free of black residue under a microscope.

[0077] In some embodiments, the grinding machine is started, and the diamond saw blade rotates under the drive of the grinding machine, grinding the sidewall of the through groove. After the grinding is completed, the diamond substrate is obtained. Step S303 specifically includes the following steps:

[0078] S3031: Start the grinder and control the no-load speed of the grinder to not exceed 800 r / min;

[0079] S3032: Grind at least one grinding surface of the diamond saw blade against the sidewall of the through groove several times until the sidewall of the through groove is completely ground.

[0080] S3033: Pause the operation of the grinder, flip the slotted substrate, and vertically insert the diamond saw blade into the through slot from the second side, so that at least one grinding surface is in close contact with the side wall of the through slot.

[0081] S3034: Restart the grinder and control the no-load speed of the grinder to not exceed 800 r / min;

[0082] S3035: At least one grinding surface of the diamond saw blade is reciprocated several times to grind the sidewall of the through groove until the sidewall of the through groove is completely ground, and a diamond substrate is obtained.

[0083] In this embodiment of the application, in step S3031 above, the rotation speed of the grinding machine when unloaded is controlled to be no higher than 800 r / min, that is, the rotation speed is less than or equal to 800 r / min. Because excessively high rotation speed can easily cause the diamond substrate to crack, one of the difficulties in grinding the sidewall of the through-slot is that careless operation during the grinding process may cause the diamond substrate to crack. Therefore, selecting an appropriate grinding speed is particularly important. That is, by controlling the rotation speed of the grinding machine to be no higher than 800 r / min, it is possible to effectively grind and remove slag such as graphite from the sidewall of the through-slot, while also effectively preventing the diamond substrate from cracking during the grinding process, thereby improving the effectiveness and reliability of the processing method.

[0084] In some embodiments, in step S3032 above, the number of times can be 3-10 times. In this step, one grinding surface can be used to grind the two sidewalls of the through groove separately, or two grinding surfaces can be used to grind the two sidewalls of the through groove simultaneously, depending on the degree of matching between the selected diamond saw blade and the size of the through groove.

[0085] In steps S3033-S3035 above, the slotted substrate is flipped over, and then a diamond saw blade is inserted from the second side for further grinding to ensure that the sidewalls of the through slot are thoroughly ground. The specific grinding process is the same as in steps S3031-S3032, and will not be repeated here.

[0086] This embodiment achieves thorough grinding of the through groove by setting appropriate grinding process parameters and faceted grinding steps, thereby reducing the problem of diamond substrate cracking and improving product stability.

[0087] In some embodiments, the predefined shape of the through slot includes a single through slot projected onto a first or second surface as a closed pattern, the closed pattern including a middle portion and ends disposed at both ends of the middle portion, the middle portion being rectangular and the ends being arc-shaped.

[0088] In some embodiments, refer to Figure 2 The end 101 of the through-slot 1 is rounded, and the middle part 102 is rectangular, which improves the structural strength of the through-slot edge. This further reduces the risk of the diamond substrate cracking during the grinding process of the through-slot sidewall. For conventional through-slots with right-angled edges, stress concentration at the right-angled edges makes the diamond substrate prone to cracking at the right angle during grinding. The cross-sectional shape of the through-slot can be rectangular, or other shapes in other embodiments.

[0089] In some embodiments, the middle portion is a straight line segment. At the intersection of the arc and the straight line segment, the angle between the tangent of the arc and the straight line segment is α, and the angle α satisfies the following condition: 0°≤α<90°. In other embodiments, the angle α between the tangent of the arc and the straight line segment satisfies the following condition: 30°≤α≤60°. Therefore, by controlling the angle α between the tangent of the arc and the straight segment to satisfy the above conditions, especially when the condition of 30°≤α≤60° is met, on the one hand, it can prevent the curvature of the arc from being too large, that is, prevent the depth of the arc from being too large, so that the diamond grinding tool (such as a diamond saw blade) can reach the top of the arc for grinding, so as to clean the graphite and other slag on the side wall of the groove at the arc. On the other hand, it can also prevent the curvature of the arc from being too small, that is, prevent the depth of the arc from being too small. When the depth of the arc is too small, large internal stress is easily generated at this point, which can easily cause the diamond substrate to crack at this point. Therefore, controlling the angle α between the tangent of the arc and the straight segment to satisfy the above conditions can also effectively avoid the occurrence of groove cracking during the grinding process, that is, the cracking of the diamond substrate, and improve the reliability of the processing method.

[0090] In some embodiments, the predefined shape of the through groove includes a trapezoidal cross-sectional shape, and the cross-section of the through groove is a surface perpendicular to the first surface or the second surface.

[0091] In this embodiment, the end of the through-groove with the trapezoidal cross-section described above can also be an arc shape with the characteristics of the aforementioned embodiment. That is, the area of ​​the through-groove on the first side is larger than the area on the second side, or the area on the second side is larger than the area on the first side. Specifically, the diamond sheet and the laser can be adjusted to a certain angle during laser grooving. Those skilled in the art can set this according to the specific trapezoidal size requirements. This application embodiment does not impose any special limitation on the angle. For the through-groove with a trapezoidal cross-section, it is convenient to observe the removal of graphite slag on the sidewall of the through-groove, and it is also convenient to form a metal layer on the sidewall of the through-groove by metal sputtering during the subsequent product manufacturing process.

[0092] In some embodiments, the diamond grinding tool includes a diamond saw blade, which includes two conical or frustum-shaped grinding surfaces symmetrically arranged along the central axis of the diamond saw blade, with diamond particles disposed on the grinding surfaces; the generatrix of the conical or frustum-shaped surface forms a first angle with the central axis, and when the diamond saw blade is inserted into the through groove, the waistline of the trapezoid forms a second angle with the central axis, and the first angle and the second angle are equal.

[0093] In this embodiment, for the trapezoidal-cut through-slot of the aforementioned embodiment, the shape of the diamond grinding tool is further specifically designed. The two grinding surfaces of a conventional diamond saw blade are flat, while in this embodiment, the two grinding surfaces of the diamond saw blade are conical or frustum-shaped. By setting the first and second angles to be equal, the two grinding surfaces of the diamond saw blade can easily and simultaneously conform to the two sides of the through-slot, thereby greatly improving grinding efficiency, reducing the number of back-and-forth grinding operations, and thus significantly reducing the risk of cracking of the diamond substrate's through-slot sides during grinding. Specifically, for rectangular through-slots, when selecting a diamond saw blade, a suitable thickness is required to ensure that the two sides of the through-slot conform to the two grinding surfaces of the diamond saw blade simultaneously. For through-slots of different widths, it may sometimes be difficult to find a suitable thickness diamond saw blade. This necessitates grinding each side individually, increasing the number of back-and-forth grinding operations. Each grinding operation carries a certain probability of diamond substrate cracking, and the increased number of grinding operations undoubtedly increases the risk of diamond substrate cracking. (Refer to...) Figure 3 In one specific embodiment, when the rectangular through-slot 21 and the diamond saw blade 22 are matched, one grinding surface 221 of the diamond saw blade 22 contacts one sidewall 211 of the through-slot 21, while the other sidewall does not contact the other grinding surface. Therefore, selecting a diamond saw blade with an appropriate matching thickness is very important. In this embodiment, by setting the grinding surface of the diamond saw blade to be conical or frustum-shaped, if a section is taken from a plane perpendicular to the central axis, the cross-sectional shape corresponding to the grinding surface area of ​​the diamond saw blade is also trapezoidal. (Refer to...) Figure 4 In one specific embodiment, when the trapezoidal slot 31 and the diamond saw blade 32 are matched, the grinding surface 321 of the diamond saw blade 32 is in contact with the side wall 311 of the slot 31, while the other side wall 312 is in contact with the other grinding surface 322. Since the radius of the diamond saw blade is much larger than the depth of the slot (i.e., the distance from the first surface to the second surface), for slots of different widths, only the insertion depth of the diamond saw blade needs to be adjusted up and down to achieve a tight fit between the two sides of the slot and the two grinding surfaces of the diamond saw blade at different positions on the trapezoidal cross-section of the diamond saw blade. This greatly improves grinding efficiency and significantly reduces the risk of cracking on the sides of the slot of the diamond substrate during grinding.

[0094] In some embodiments, after step S2, where a predefined groove of a specific shape is formed on the diamond sheet using a laser cutting method, the groove penetrating the diamond sheet from the first surface to the second surface to obtain a grooved substrate, before step S3, where a diamond abrasive grinding tool is inserted into the groove and at least one grinding surface of the tool is in close contact with the sidewall of the groove to grind the sidewall of the groove to obtain the diamond substrate, the method further includes:

[0095] S2021: Perform the first cleaning of the slotted substrate to remove powder particles;

[0096] S2022: Perform a second cleaning on the slotted substrate to remove organic oil stains;

[0097] S2023: Perform a third cleaning on the slotted substrate to dehydrate it;

[0098] S2024: Dry the dehydrated slotted substrate with inert gas.

[0099] In this embodiment, in step S2021 above, the slotted substrate is ultrasonically cleaned in a first organic solvent for 10-30 minutes, and then ultrasonically cleaned in deionized water for 10-30 minutes to remove powder particles. Exemplarily, the first organic solvent used for cleaning the powder particles includes organic acids, such as aliphatic mono-, di-, and polycarboxylic acids (tartaric acid, oxalic acid, malic acid, citric acid, ascorbic acid, etc.); aromatic organic acids (benzoic acid, salicylic acid, caffeic acid, etc.); preferably, a saturated oxalic acid solution is used.

[0100] In step S2022 above, the slotted substrate is ultrasonically cleaned in a second organic solvent for 10-30 minutes, and then ultrasonically cleaned in deionized water for 10-30 minutes to remove organic oil stains. Exemplarily, the second organic solvent used for cleaning organic oil stains includes acetone, ethyl acetate, methanol, isopropanol, chloroform, dichloromethane, dimethylformamide (DMF), dimethyl sulfoxide (DMSO), acetonitrile, etc.; preferably, acetone is used.

[0101] In step S2023 above, the slotted substrate is ultrasonically cleaned in a third organic solvent for 10-30 minutes to dehydrate it, leaving no water stains, and also to remove oil / fingerprints and other substances. For example, the third organic solvent used for dehydration includes ethanol, ethylene glycol, isopropanol, acetone, cyclohexanone, etc.; preferably, ethanol is used.

[0102] In step S2024 above, the dehydrated slotted substrate is dried by blowing it with an inert gas. For example, the inert gas may include nitrogen, helium, etc.

[0103] In some embodiments, step S3, in which a diamond grinding tool is inserted into the through groove so that at least one grinding surface of the diamond grinding tool is in close contact with the sidewall of the through groove to grind the sidewall of the through groove and obtain the diamond substrate, further includes the following steps:

[0104] S30: A diamond grinding tool is inserted into the through groove so that at least one grinding surface of the diamond grinding tool is in close contact with the side wall of the through groove to grind the side wall of the through groove.

[0105] S31: Immerse the polished grooved substrate in an acid solution at 100-110°C for several tens of minutes;

[0106] S32: Remove the slotted substrate, rinse it with deionized water, and then dry it with inert gas to obtain a diamond substrate.

[0107] In some embodiments, step S31 may involve immersing the end of the through groove on the polished slotted substrate in an acid solution at 100-110°C for several tens of minutes.

[0108] In this embodiment, the acid solution in step S31 can be strong sulfuric acid, aqua regia (a highly corrosive mixed acid prepared by mixing concentrated hydrochloric acid and concentrated nitric acid in a 3:1 ratio), piranha solution (a mixture of concentrated sulfuric acid and 30% hydrogen peroxide (7:3)), permanganic acid, chromic acid, etc. For diamond substrates that have already been polished, the amount of acid solution used in step S31 can be very small, just enough to submerge the diamond substrate. For example, in the case of vertical cleaning in a fixture, the solution height should be at least greater than the substrate diameter plus the fixture height, for example, 300mL to 500mL, and the acid solution can be reused. The temperature of the acid solution can be heated to 100 to 110°C using an oil bath. After soaking for, for example, 10-30 minutes, rinse with a large amount of deionized water for 5-10 minutes, and then dry with an inert gas, such as nitrogen. This embodiment combines physical grinding with chemical dissolution cleaning, employing a method of grinding first followed by chemical dissolution cleaning. On one hand, physical grinding completely removes graphite and other slag adhering to the sidewalls of the non-end areas of the channel, as well as all or part of the slag adhering to the arc-shaped sidewalls of the channel ends. On the other hand, chemical solvents are used to further clean the substrate after grinding, cleaning areas not reached by the diamond grinding tool (especially the aforementioned arc-shaped channel ends). This achieves comprehensive and effective cleaning of all areas of the channel sidewalls, resulting in a more thorough cleaning. This further improves the reliability and stability of diamond-loaded products prepared from diamond substrates processed using this method, effectively increasing the yield of diamond-loaded products and reducing their production costs. In contrast, purely chemical dissolution cleaning requires large amounts of strong oxidizing chemical solvents (such as strong acids), often requiring multiple strong acids and repeated immersion cleaning, resulting in low cleaning efficiency and a large amount of chemical solvent used, which is environmentally unfriendly.

[0109] In some embodiments, step S3, in which a diamond grinding tool is inserted into the through groove so that at least one grinding surface of the diamond grinding tool is in close contact with the sidewall of the through groove to grind the sidewall of the through groove and obtain the diamond substrate, further includes:

[0110] S30: A diamond grinding tool is inserted into the through groove so that at least one grinding surface of the diamond grinding tool is in close contact with the side wall of the through groove to grind the side wall of the through groove.

[0111] S33: Using a toothbrush dipped in toothpaste, place the polished slotted substrate on a flat surface and repeatedly wipe the areas near the through slots on the first and second sides of the polished slotted substrate.

[0112] S34: After wiping, place the grooved substrate into deionized water and clean it repeatedly with a toothbrush without toothpaste to obtain a diamond substrate.

[0113] In this embodiment, during laser cutting, in addition to graphite slag adhering to the sides of the through groove, a small amount of deposited material may also adhere to the edges of the first / second side of the diamond substrate near the through groove. To ensure that the graphite slag near the groove on the first / second side is completely removed, further cleaning is performed after polishing using steps S33-S34 described above. Specifically, a fine-bristled hard toothbrush is dipped in baking soda toothpaste, and the diamond substrate is placed in a petri dish or on a flat surface. The substrate is repeatedly rubbed against the groove, 3-10 times for each groove. After rubbing, deionized water is placed in the petri dish, and the substrate is repeatedly cleaned with a toothbrush without toothpaste until no foam is produced. After wiping, the substrate is placed in an alcohol bath and sonicated for 10 minutes, then dried with nitrogen and removed. Using a toothbrush for scrubbing is gentler yet sufficient to remove the deposits. When cleaning the graphite slag on the surface, it is difficult to control the grinding range if diamond grinding is used due to the lack of through groove limit. This can easily cause the diamond substrate to shift, damaging the surface of the diamond substrate and affecting the film formation performance in subsequent product manufacturing.

[0114] In some other embodiments, steps S31-S32 may also be placed after S33-S34.

[0115] In other embodiments, after step S2, in which a predefined groove of a specific shape is formed on a diamond sheet using a laser cutting method, the groove penetrating the diamond sheet from the first surface to the second surface to obtain a slotted substrate, the method further includes:

[0116] S2025: Perform the first cleaning of the slotted substrate to remove powder particles;

[0117] S2026: Perform a second cleaning of the slotted substrate to remove organic oil stains;

[0118] S2027: Perform a third cleaning of the slotted substrate to dehydrate it;

[0119] S2028: Dry the dehydrated slotted substrate with inert gas;

[0120] S2029: Place the dried slotted substrate into an oven to dry it, and obtain a diamond substrate.

[0121] The cleaning and inert gas drying steps S2025-S2028 are basically the same as those in steps S2021-S2024. The specific implementation of these steps is the same as described in steps S2021-S2024 and will not be repeated here. The difference lies in that the slotted substrate that is repeatedly cleaned and dried in steps S2025-S2028 refers to the slotted substrate after polishing in step S30, while the slotted substrate that is repeatedly cleaned and dried in steps S21-S2024 refers to the slotted substrate after laser slotting in step S2.

[0122] In step S2029 above, the slotted substrate, after being dried by inert gas, is placed in a clean oven at 150-200℃ and baked for 0.5-2 hours to fully dry the moisture and obtain a diamond substrate.

[0123] In some other embodiments, steps S2025-S2028 can also be set after the toothbrush cleans the slotted substrate in step S34.

[0124] Some embodiments of this application also disclose a diamond substrate, which is prepared by the diamond substrate processing method of any of the foregoing embodiments.

[0125] In this embodiment, the graphite slag adhering to the through groove of the diamond substrate is cleaned, which can effectively improve the adhesion of the film layer on the side of the diamond and enhance the stability of the downstream products (such as diamond load sheets); moreover, the product yield is high, the cost is low, and it has good economic value and market competitiveness.

[0126] Reference Figure 5 Some embodiments of this application disclose a method for preparing a diamond load, which uses the aforementioned diamond substrate to prepare the diamond load, and includes the following steps:

[0127] T1: With the second side of the diamond substrate facing upward, a first film layer is sputtered onto the second side. The first film layer includes a metal film layer and serves as the first substrate.

[0128] T2: With the first surface of the first substrate facing upward, a second film layer is sputtered onto the first surface. The second film layer includes a resistive film layer and a metal film layer, serving as the second substrate.

[0129] T3: Electroplating thickens the first and second film layers with a metal film layer, which serves as the third substrate;

[0130] T4: Photolithography is performed on the third substrate to pattern the resistive film layer, which serves as the fourth substrate;

[0131] T5: The resistive film layer of the fourth substrate is thermally oxidized and adjusted, and then subjected to thermal testing at a preset temperature for several minutes to tens of minutes to obtain the fifth substrate;

[0132] T6: Laser scribing is performed on the fifth substrate to obtain a diamond load.

[0133] In this embodiment, in step T1 above, the second side of the diamond substrate is placed upwards, and a first film layer is sputtered using a magnetron sputtering machine. The first film layer includes at least a metal film layer, such as an Au film layer. In an exemplary embodiment, Ti, Ni, and Au films are sputtered, with thicknesses of 0.1 μm, 1.2 μm, and 0.1 μm, respectively. The diamond substrate after sputtering the first film layer is then cleaned. Exemplarily, it is ultrasonicated in acetone for 10 min, ultrasonicated with deionized water overflow for 10 min, ultrasonicated in anhydrous ethanol for 10 min, dried with nitrogen, and then baked in a clean oven at 150°C for 1 hour. During the sputtering of the first film layer on the second side, the first film layer material is also deposited on the sidewall of the channel, thereby forming a metal layer on the sidewall.

[0134] In step T2 above, with the first side of the diamond substrate facing upwards, a second film layer is sputtered using a magnetron sputtering machine. The resistive film layer includes, for example, TaN or WTi films, and the metal film layer includes, for example, an Au film layer. In an exemplary embodiment, TaN, WTi, and Au films are sputtered respectively. The sheet resistance of TaN is designed to be 40-45 ohms / square, and the thicknesses of WTi and Au are 0.1µm and 0.1µm, respectively. Similarly, during the sputtering of the second film layer on the second side, the metal film material in the second film layer can be controlled to deposit in the direction of the channel sidewalls to further improve the formation of the metal layer on the sidewalls.

[0135] In step T3 above, an electroplating system is used to thicken the film layers on the first and second sides. In an exemplary embodiment, for example, a gold cyanide electroplating system is used to thicken the Au film layer to 3.5-4 μm on the front side and 0.5-1 μm on the back side to meet the requirements of back-side welding and front-side bonding. It can be understood that the metal layer on the sidewall of the channel is also thickened during this process.

[0136] In step T4 above, the photolithography etching can be performed once or multiple times. In an exemplary embodiment, the photolithography etching includes two photolithography etching processes, specifically:

[0137] The process involves spraying photoresist onto the second side, baking and hardening the film, then spraying photoresist onto the second side again. After the pre-baking is completed, the first exposure photolithography is performed, followed by development, deionization rinsing, nitrogen drying, and baking and hardening.

[0138] Using Au and WTi etching solutions, the Au film was first etched away, then rinsed with deionized water and dried with nitrogen before etching the WTi film. After etching, the resist was removed in a resist remover, rinsed with deionized water, and dried with nitrogen.

[0139] The process involves spraying photoresist onto the first side, baking and hardening the film, then spraying photoresist onto the first side again. After the pre-baking is completed, a second exposure and overlay are performed, followed by photolithography, development, deionization rinsing, nitrogen drying, and baking and hardening.

[0140] Use TaN etching solution to etch away the TaN film. After completion, remove the resist in a resist remover, rinse with deionized water, and dry with nitrogen.

[0141] In step T5 above, in one specific embodiment, the above-mentioned thermal oxidation resistance adjustment process includes: under the atmospheric environment of the hot plate, the temperature is controlled at 300℃, the TaN resistance accuracy requirement is 50Ω±5%, that is, 47.5-52.2Ω, the resistance adjustment time is 30-60min, and the resistance is tested with an 8-digit half-resistance tester until the average resistance is ≥47.5Ω. The above-mentioned thermal testing process includes: using a conventional metal electric hot plate that can be heated, first adjusting the hot plate temperature to a preset temperature (usually above 300℃, for example, 300-350℃), after the temperature reaches the preset temperature, placing the fourth substrate after thermal oxidation resistance adjustment on the hot plate, and starting the timer until the preset time is reached and heating stops (the thermal testing time varies depending on the needs, generally 5-15min, for example, 10min), removing the fifth substrate (i.e., the fourth substrate after thermal oxidation resistance adjustment and thermal testing) from the hot plate, and after it cools down, observing its side with a microscope to see if there are phenomena such as blistering or demolding. Thermal testing can verify the load-bearing effect of the metal film layer (especially the side metal layer at the through groove).

[0142] In step T6 above, a cutting groove is processed along the center of the edge line of the unit size using an ultraviolet nanosecond laser, and the unit is split into individual load units using a dicing machine; preferably, the groove depth is greater than 1 / 2 the thickness of the diamond substrate.

[0143] In this embodiment, the diamond load obtained by further preparing the diamond substrate prepared by the aforementioned method can be clearly seen to be cleaned of the graphite black before cleaning, and after the 320°C heat test, there is no bubbling or residual molten material, which greatly improves the product yield.

[0144] In some embodiments, after step T5, the following may be included: T7: After the thermal test is completed, the diamond load surface and the through groove are visually inspected under a microscope of 50-200x magnification, and the diamond loads in the through grooves without bubbles or molten material are sorted out.

[0145] In some embodiments, after step T6, the process may further include: T8: visually inspecting the appearance, dimensions, film thickness, bonding strength, and side 3M tape pull-out test of a single load cell, and warehousing the qualified products.

[0146] Some embodiments of this application disclose a diamond load, prepared using the aforementioned diamond load preparation method. (Refer to...) Figure 6 The diamond load includes a first surface 51 and a second surface 52. Several through slots 53 are formed on the diamond load. The first surface 51 includes a first metal film layer region 511 and a resistive film layer region 512. The second surface 52 includes a second metal film layer region 521. The sidewalls of the through slots 53 cover the side metal film layer 531.

[0147] The diamond load in this embodiment did not exhibit bubbling or molten residue after being subjected to a 320°C heat test, resulting in a significantly improved product yield.

[0148] The following comparative examples and specific embodiments are used for comparison and explanation.

[0149] Example 1

[0150] Grooving process:

[0151] (1) Select a circular diamond sheet with a thickness of 0.381 mm and a diameter of 65 mm. Use an ultraviolet nanosecond laser cutting machine to cut a through groove on the diamond sheet. The width of the groove is 0.2 mm, the edge of the groove is semi-circular, and the distance between the arc and the edge of the substrate is 3.5 mm. After laser cutting, wipe the grooved substrate back and forth twice with a lint-free cloth soaked in alcohol. After wiping, put it in an alcohol bath and sonicate for 10 minutes. Blow it dry with nitrogen and take it out to obtain the grooved substrate.

[0152] Process for removing graphite slag:

[0153] (2) Place the slotted substrate on a sponge, fix a diamond saw blade with a thickness of 0.2 mm, an outer diameter of 16 mm, and an inner diameter hole of 3 mm on a small grinder, set the speed to 800 r / min, and grind along the length of the slot. Grind back and forth 3-10 times, then turn it over and continue grinding 3-10 times until the sidewalls are white and there is no black residue when observed under a microscope. Then, use a fine-bristled hard toothbrush dipped in baking soda toothpaste, place the slotted substrate in a plastic petri dish, and repeatedly wipe the slots. Each slot is wiped back and forth 3-10 times. After wiping, change the deionized water in the petri dish and clean it repeatedly with a toothbrush without toothpaste until no foam is produced. After wiping, put it in an alcohol bath and sonicate for 10 minutes. Blow it dry with nitrogen and take it out.

[0154] (3) Place the polished grooved substrate flat in a Teflon fixture, immerse it in a small amount of strong sulfuric acid, heat it in an oil bath at 100-110℃, immerse it for 30 minutes, rinse it with a large amount of flowing deionized overflow for 5 minutes, and then blow it dry with nitrogen.

[0155] (4) The treated grooved substrate was ultrasonically cleaned in saturated oxalic acid solution for 30 min, then ultrasonically overflowed in deionized water for 10 min, then ultrasonically in acetone for 10 min, ultrasonically overflowed in deionized water for 10 min, ultrasonically in anhydrous ethanol for 10 min, then dried with nitrogen and placed in a clean oven at 150°C for 1 h to obtain a diamond substrate.

[0156] Diamond-supported preparation process:

[0157] (5) With the second side of the diamond substrate facing up, Ti, Ni and Au films are sputtered by a magnetron sputtering machine, with thicknesses of 0.1 μm, 1.2 μm and 0.1 μm respectively.

[0158] (6) The diamond substrate after sputtering Ti, Ni and Au films was ultrasonicated in acetone for 10 min, ultrasonicated in deionized water for 10 min, ultrasonicated in anhydrous ethanol for 10 min, dried with nitrogen, and then placed in a clean oven at 150°C for 1 h for use as the first substrate.

[0159] (7) With the first side of the first substrate facing upward, a magnetron sputtering machine is used to sputter TaN, WTi and Au films respectively, wherein the sheet resistance of TaN is designed to be 40-45 ohms / square, and the thicknesses of WTi film and Au film are 0.1um and 0.1um respectively.

[0160] (8) Using a cyanide gold salt electroplating system, the double film layer is electroplated to a thickness of 3.5-4 μm on the front side and 0.5-1 μm on the back side to meet the requirements of back side welding and front side bonding.

[0161] (9) Using a spray adhesive process, the second side is sprayed with adhesive first, and after baking and hardening, the first side is sprayed with adhesive again. After the pre-baking is completed, the first exposure photolithography is performed, followed by development, deionization rinsing, nitrogen drying, and baking and hardening.

[0162] (10) Using Au and WTi etching solutions, first etch away the Au film, then rinse it clean in deionized water, blow it dry with nitrogen, and then etch the WTi film. After etching, remove the resist in the resist remover, rinse it clean with deionized water, and blow it dry with nitrogen.

[0163] (11) The adhesive spraying process is adopted. First, the adhesive is sprayed on the back side, and after baking and hardening, the adhesive is sprayed on the front side. After the front baking is completed, the second exposure and overlay are performed. After photolithography, development is performed, deionization is rinsed and nitrogen is blown dry, and then baking and hardening are performed.

[0164] (12) Use TaN etching solution to etch away the TaN film. After completion, remove the adhesive in the adhesive remover, rinse with deionized water and dry with nitrogen.

[0165] (13) The resistance of the front side of the etched diamond substrate is adjusted by thermal oxidation. Under the hot plate atmospheric environment, the temperature is controlled at 300℃. The TaN resistance accuracy requirement is 50Ω±5%, that is, 47.5-52.2Ω. The adjustment time is 30-60min. The resistance is tested with an 8-digit half-digit resistance tester until the average resistance is ≥47.5Ω. Then the hot plate temperature is adjusted to 320℃. After the heat test is performed for 5min, it is taken out.

[0166] (14) After the thermal test is completed, the substrate surface and channels are visually inspected under a microscope at 50-200x magnification.

[0167] (15) Use an ultraviolet nanosecond laser to process a groove with a depth greater than 1 / 2 of the substrate thickness along the center of the edge line of the load unit size, and use a dicing machine to dicing into individual load units.

[0168] (16) Perform 100% visual inspection of each load unit, including dimensions, film thickness, bonding strength, and 3M tape pull-out test on the side. Qualified products are put into storage.

[0169] Comparative Example 1

[0170] The grooving process and diamond load preparation process in Comparative Example 1 are the same as in Example 1, except that the following steps are used in the process of removing graphite slag:

[0171] Heating to 70°C with chromic acid and sonicating for 10 minutes;

[0172] The mixture was ultrasonicated for 10 minutes at room temperature using 20% ​​hydrofluoric acid.

[0173] Rinse with deionized water for 2 minutes;

[0174] The mixture was heated to 80°C using a 3% alkaline surfactant and then sonicated for 20 minutes.

[0175] Rinse three times with deionized water;

[0176] Heat the water to 80℃ and then sonicate for 20 minutes.

[0177] Rinse 6 times with deionized water;

[0178] Anhydrous ethanol was used, and the mixture was sonicated at room temperature for 10 minutes.

[0179] The substrate was baked at 100℃ for 1 hour.

[0180] The diamond substrate prepared in Example 1 after grooving and cleaning was observed under a microscope on the sidewall of the through-groove. The results are as follows: Figure 7 As shown, Figure 7 Image (a) shows the side wall of the trough before cleaning, where a lot of black graphite slag is attached to its surface. Figure 7 Image (b) shows the sidewall of the cleaning channel. Its surface is whitish with no black residue, clearly indicating that the graphite slag has been thoroughly cleaned. Figure 7 (a) and Figure 7 (b) shows that the diamond substrate processing method provided in the embodiments of this application has a good effect on removing graphite slag.

[0181] After the thermal tests of the diamond loads prepared in Example 1 and Comparative Example 1 were completed in step (14), the film adhesion effect at the through-groove of the diamond loads was observed under a microscope as follows: Figure 8 As shown. Figure 8 Images (a) and (b) are partial images of the diamond-loaded material prepared in Comparative Example 1. Figure 8 Images (c) and (d) are partial images of the diamond-loaded diamond prepared in Example 1. Figure 8 As can be seen in (a), there is obvious bubbling in the direction indicated by the arrow. Figure 8 (b) The elliptical area indicates obvious slag residue; while Figure 8 In (c) and (d), the metal film adhering to the through-slot is intact, with no blistering or residual molten material observed. It is evident that the diamond load provided in this embodiment exhibits good adhesion to the diamond substrate, especially the sidewalls of the diamond through-slot, after thermal testing. Compared to Comparative Example 1, the yield of the diamond load can be significantly increased from 50% to 85%, demonstrating good economic and promotional value. This indicates that, compared to the prior art, the diamond substrate obtained using the processing method provided in this embodiment exhibits excellent cleaning of graphite and other molten slag adhering to the sidewalls of the through-slot, facilitating metal coating and other processes. This effectively improves the yield and reliability of products manufactured using it, such as diamond loads.

[0182] Obviously, the embodiments described above are only some embodiments of this application, not all embodiments. The accompanying drawings show preferred embodiments of this application, but do not limit the patent scope of this application. This application can be implemented in many different forms; rather, the purpose of providing these embodiments is to provide a more thorough and comprehensive understanding of the disclosure of this application. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing specific embodiments, or make equivalent substitutions for some of the technical features. Any equivalent structures made using the content of this application's specification and drawings, directly or indirectly applied to other related technical fields, are similarly within the scope of patent protection of this application.

Claims

1. A method of processing a diamond substrate, characterized by, The method comprises the following steps: providing a diamond sheet having opposite first and second faces; using a laser cutting method to open a through groove of a predefined shape on the diamond sheet, the through groove penetrating the diamond sheet from the first face to the second face, obtaining a grooved substrate; the predefined shape of the through groove comprises: the projection of a single through groove on the first face or the second face is a closed pattern, the closed pattern comprises a middle part and end parts arranged at both ends of the middle part, the middle part is rectangular, and the end parts are circular arcs; the cross-sectional shape of the through groove is trapezoidal, and the cross section of the through groove is a face perpendicular to the first face or the second face; wherein the middle part is a straight line segment, at the intersection of the circular arc and the straight line segment, the tangent of the circular arc and the straight line segment form an angle α, and the angle α satisfies 30°≤α≤60°, and the width of the through groove is 0.2-0.25mm; using an emery polishing tool to probe into the through groove, so that at least one polishing surface of the emery polishing tool is in close contact with the side wall of the through groove to polish the side wall of the through groove, obtaining the diamond substrate, specifically comprising: selecting an emery polishing tool matched with the size of the through groove, the emery polishing tool comprising an emery saw blade, the emery saw blade comprising two conical or conical frustum-shaped polishing surfaces symmetrically arranged along a middle axis of the emery saw blade, and diamond particles are arranged on the polishing surfaces; the generatrix of the conical or conical frustum shape forms a first angle with the middle axis, and when the emery saw blade is probed into the through groove, the waist line of the trapezoidal shape forms a second angle with the middle axis, and the first angle is equal to the second angle; connecting the emery saw blade with a polisher, and vertically placing the emery saw blade into the through groove from the first face, so that at least one polishing surface is in close contact with the side wall of the through groove; starting the polisher, and controlling the no-load rotating speed of the polisher to be not higher than 800r / min; reciprocally grinding the at least one polishing surface of the emery saw blade against the side wall of the through groove for several times until the side wall of the through groove is completely ground; pausing the operation of the polisher, turning over the grooved substrate, vertically placing the emery saw blade into the through groove from the second face, so that at least one polishing surface is in close contact with the side wall of the through groove; starting the polisher again, and controlling the no-load rotating speed of the polisher to be not higher than 800r / min; reciprocally grinding the at least one polishing surface of the emery saw blade against the side wall of the through groove for several times until the side wall of the through groove is completely ground; immersing the polished grooved substrate in an acid solution at 100-110℃ for tens of minutes; taking out the grooved substrate, rinsing it with deionized water, and then drying it with an inert gas to obtain the diamond substrate.

2. The method of processing a diamond substrate according to claim 1, wherein, After the step of using a laser cutting method to open a through groove of a predefined shape on the diamond sheet, the through groove penetrating the diamond sheet from the first face to the second face, obtaining a grooved substrate, the method further comprises: performing first cleaning on the grooved substrate to remove powder particles; performing second cleaning on the slotted substrate to remove organic dirt; performing third cleaning on the slotted substrate to remove water; blowing dry the slotted substrate after removing water by inert gas.

3. The method of processing a diamond substrate according to claim 2, wherein, After the step of blowing dry the slotted substrate after removing water by inert gas, further comprising: putting the slotted substrate after blowing dry into an oven to dry, to obtain the diamond substrate.

4. The method of machining a diamond substrate of claim 1, wherein, The step of using the emery polishing tool, inserting into the through slot, and making at least one polishing surface of the emery polishing tool tightly contact with the side wall of the through slot to polish the side wall of the through slot, to obtain the diamond substrate, comprises: using the emery polishing tool, inserting into the through slot, and making at least one polishing surface of the emery polishing tool tightly contact with the side wall of the through slot to polish the side wall of the through slot; using a toothbrush to dip toothpaste, and putting the polished slotted substrate on a flat plane to repeatedly wipe the area close to the through slot on the first surface and the second surface of the polished slotted substrate; after wiping, putting the slotted substrate into deionized water, and repeatedly cleaning with a toothbrush without toothpaste, to obtain the diamond substrate.

5. A diamond substrate, characterized by, Prepared by using the processing method of the diamond substrate according to any one of claims 1-4.

6. A method of making a diamond load, characterized by, The diamond substrate prepared by using the processing method of the diamond substrate according to any one of claims 1-4 is used to prepare the diamond load, comprising the following steps: putting the second surface of the diamond substrate upward, and sputtering a first film layer on the second surface, the first film layer comprising a metal film layer as a first substrate; putting the first surface of the first substrate upward, and sputtering a second film layer on the first surface, the second film layer comprising a resistance film layer and a metal film layer as a second substrate; electroplating and thickening the metal film layer of the first film layer and the second film layer as a third substrate; performing photoetching and etching on the third substrate to pattern the resistance film layer as a fourth substrate; performing thermal oxidation resistance adjustment on the resistance film layer of the fourth substrate, and performing thermal evaluation at a preset temperature for several minutes to several tens of minutes to obtain a fifth substrate; performing laser scribing and cutting on the fifth substrate to obtain the diamond load.

7. A diamond load characterized in that, Prepared by using the preparation method of the diamond load according to claim 6.

Images