Antireflective self-cleaning coating for photovoltaic modules and preparation method thereof

Abstract

The present invention belongs to the field of coating technology and provides a self-cleaning anti-reflection coating for photovoltaic modules and a preparation method thereof. A sol-gel method is used to synthesize a SiO2 particle sol. Trifluoropropyltriethoxysilane undergoes a condensation reaction with hydroxyl groups on the surface of the SiO2 particles, exposing the trifluoropropyl groups on the surface of the SiO2 particles to reduce surface energy. Free radicals generated by the decomposition of cyclopropylethyltrimethylsilyl acetal react with 1H,1H-perfluorooctyl acrylate to form a long-chain perfluoropolymer. The introduction of perfluorooctyl side chains improves light transmittance while also providing low surface energy and hydrophobicity. Methylated high-imino melamine is used as a cross-linking agent. The imino and methoxy groups in its molecular structure react with carboxyl or hydroxyl groups to form ether bonds to form a stable bonding structure, further increasing the cross-linking density. The prepared coating can reduce light reflection from the surface of the photovoltaic module, improve light transmittance, and enhance the self-cleaning ability of the coating.

Description

Technical Field

[0001] The invention belongs to the technical field of coatings and relates to an anti-reflection self-cleaning coating for photovoltaic modules and a preparation method thereof. Background Art

[0002] Photovoltaic power generation, as a sustainable and clean energy technology, has received widespread attention and application. Photovoltaic modules are exposed to the outdoors all year round, and dust, oil, leaves and other impurities are easily attached to their surfaces. Especially in highly polluted environments such as deserts and industrial areas, this pollution can significantly reduce the light absorption capacity of the modules. Existing cleaning methods such as manual cleaning or mechanical cleaning not only increase maintenance costs, but may also cause wear and tear on the surface of the modules. At the same time, traditional glass substrates or transparent packaging materials will lose some light energy due to surface reflection, resulting in insufficient light transmittance. In addition, surface optical inhomogeneity may further affect the transmission efficiency of light. Photovoltaic modules face two major problems in actual use: reduced light transmittance and accumulation of surface contamination. Therefore, the development of a coating with anti-reflection and self-cleaning functions has become an important direction to solve these problems. Summary of the Invention

[0003] In response to the shortcomings of the existing technology, the purpose of the present invention is to provide an anti-reflective self-cleaning coating for photovoltaic modules and a preparation method thereof. The coating adopts a multiple collaborative design of modified SiO2 particles, fluorine-containing compounds and silicone resins, improves the transmittance through optical regulation of nanostructures, realizes the self-cleaning function through low surface energy modification of the surface, and forms a dense cross-linked network at the same time to improve the weather resistance of the coating, thereby meeting the needs of actual production.

[0004] To achieve this object, the present invention adopts the following technical solutions:

[0005] In a first aspect, the present invention provides a method for preparing an antireflective self-cleaning coating for a photovoltaic module, the preparation method comprising:

[0006] Step S1, dispersing polyacrylic acid in aqueous ammonia to obtain a mixed solution, adding the mixed solution to anhydrous ethanol and continuously stirring at a first stirring speed, then adding tetraethyl orthosilicate and continuously stirring at the first stirring speed to form a SiO2 particle sol, heating the SiO2 particle sol to a first temperature and adding a pH-adjusted trifluoropropyltriethoxysilane solution, and continuing the reaction to obtain a modified SiO2 sol;

[0007] Step S2: uniformly dispersing cyclopropylethyltrimethylsilyl acetal in 1H,1H,5H-octafluoropentyl-1,1,2,2-tetrafluoroethyl ether, adding a reflux condenser, heating to a second temperature, and stirring at a second stirring speed to react to obtain a reaction solution A; dispersing benzoyl peroxide and 1H,1H-perfluorooctyl acrylate in another portion of 1H,1H,5H-octafluoropentyl-1,1,2,2-tetrafluoroethyl ether to obtain a reaction solution B; adding the reaction solution B to the reaction solution A, continuing the reaction at the second temperature, then heating to a third temperature and continuing the reaction; and cooling to room temperature after the reaction to obtain a coating solution;

[0008] Step S3, under a nitrogen atmosphere, methyl methacrylate, octyl acrylate, hydroxyethyl acrylate, 2-hydroxyethyl acrylic acid, bis-3-methacryloxypropylated tetramethyldisiloxane, azobisisobutyronitrile, and dodecanethiol are sequentially mixed, and the mixture is added to ethyl acetate at a fourth temperature for continuous reaction, and the temperature is then raised to a fifth temperature for continuous reaction. After the reaction is completed, the mixture is cooled to room temperature to obtain a mixture, and triethylamine is added to the mixture and stirred at a first stirring speed. Deionized water is then added, and the mixture is continuously stirred at a third stirring speed to obtain a coating precursor;

[0009] Step S4: dispersing the crosslinker in propylene glycol monomethyl ether acetate to form a crosslinker solution, mixing the modified SiO2 sol, the coating solution and the coating precursor, and then adding the crosslinker solution and continuously stirring at a second stirring speed to obtain an anti-reflective self-cleaning coating for photovoltaic modules.

[0010] The carboxyl groups in the polyacrylic acid molecules react with the ammonia molecules in the ammonia water to form carboxylates. Due to the electrostatic repulsion, the polyacrylic acid molecular chains are more easily dispersed in water, forming a uniform polyacrylic acid solution and providing adsorption sites for the subsequent hydrolysis and condensation of tetraethyl orthosilicate. In the weakly alkaline environment provided by the ammonia water, the ethoxy groups of tetraethyl orthosilicate react with water to form silanol groups, which further form silicon-oxygen bonds through condensation reactions, ultimately generating SiO2 particles. During this process, polyacrylic acid stabilizes the SiO2 particles through electrostatic adsorption, preventing them from agglomerating while maintaining the uniformity of the particles; under acidic conditions, the ethoxy group of trifluoropropyltriethoxysilane solution reacts with water to form silanol groups, and the silanol groups in the trifluoropropyltriethoxysilane solution undergo condensation reaction with the hydroxyl groups on the surface of the SiO2 nanoparticles to form strong silicon-oxygen bonds. At the same time, the trifluoropropyl groups are exposed on the SiO2 surface, reducing the surface energy and forming a hydrophobic coating, thereby realizing the self-cleaning function. The strong bonding through the silicon-oxygen bond improves the weather resistance and chemical stability of the coating, and it can maintain its performance under long-term exposure to ultraviolet radiation and humid heat conditions in the photovoltaic environment.

[0011] The cyclopropyloxy group in cyclopropylethyltrimethylsilyl acetal is a three-membered ring structure, a cyclic ether composed of two carbon atoms and one oxygen atom. There is high tension within the ring, making its chemical bond relatively unstable. Under thermal energy, one of the CO bonds in the cyclopropyloxy group breaks, resulting in the ring opening. After the ring opening, the oxygen atom on the cyclopropyloxy group connects with the silicon atom of cyclopropylethyltrimethylsilyl acetal to form a new siloxy group. The remaining carbon chain forms an intermediate with an active group, providing a site for subsequent reactions. The OO bond of benzoyl peroxide is a weak bond and is easily thermally decomposed to generate two benzoyl radicals. The benzoyl radicals further decompose to generate phenyl radicals. The 1H,1H-perfluorooctyl acrylate molecule contains a carbon-carbon double bond. The double bond consists of a σ bond and a π bond, of which the π bond is weaker and easily attacked by nucleophilic or free radical species. When the phenyl radical comes into contact with the double bond of the 1H,1H-perfluorooctyl acrylate molecule, the phenyl radical attacks the π electrons of the double bond, destroying the double bond, causing one of the carbon atoms to combine with the free radical, and the other carbon atom leaves an unpaired electron to form a new σ bond, while generating active chain free radicals. Due to the inductive effect of the perfluoro chain, the active chain free radical has a stable electron cloud distribution and is more likely to react with other molecules to form a long-chain perfluoroacrylate polymer. The perfluorooctyl side chain is introduced into the molecular structure, and the low refractive index of the perfluoro chain segment enables it to effectively reduce the loss of reflected light at the optical interface, improve light transmittance, and bring low surface energy and hydrophobic properties.

[0012] The carbon-carbon double bond of perfluorooctyl acrylate is the active center of the polymerization reaction. After free radical initiation, linear or branched chain segments are formed. During the chain growth process, a large number of side chains containing perfluoro groups are formed in the polymer. The high hydrophobicity and low polarity of these side chains provide hydrophobic properties for the coating. The perfluorooctyl acrylate chain in the polymerization process may form cross-links with cyclopropylethyltrimethylsilyl acetal, enhancing the mechanical properties and chemical stability of the polymer. The cross-linking effect forms a three-dimensional network structure, which makes the coating have better wear resistance and adhesion.

[0013] Under nitrogen protection and the action of the free radical initiator azobisisobutyronitrile, multiple monomers form copolymers through free radical polymerization. The double bonds contained in the acrylate monomers form long-chain copolymers through free radical-initiated polymerization. Methyl methacrylate provides a hard skeleton to increase the hardness of the coating. Octyl acrylate introduces flexible chain segments to improve the toughness and adhesion of the coating and enhance weather resistance. Hydroxyethyl acrylate and 2-hydroxyethyl acrylic acid provide active hydroxyl sites for subsequent reaction with crosslinkers to form a three-dimensional network structure, thereby improving the mechanical properties and chemical resistance of the coating. Bis-3-methylpropyleneoxypropylated tetramethyldisiloxane introduces silicon-oxygen chain segments to improve hydrophobicity and weather resistance and enhance the self-cleaning effect. This molecular design helps to balance the toughness and strength of the coating. During the polymerization process, dodecanethiol combines with free radicals through active hydrogen to regulate the molecular weight of the polymer, prevent excessive polymerization, and improve the stability of the coating. The core feature of methylated high-imino melamine as a cross-linking agent is that its molecular structure contains a large number of active imino and methoxy groups. The methoxy groups react with hydroxyl groups to generate ether bonds, forming a dense three-dimensional cross-linked network. The imino groups can react with carboxyl or hydroxyl groups to form a more stable bonding structure, further increasing the cross-linking density.

[0014] As a preferred technical solution of the present invention, in step S1,

[0015] The mass ratio of the polyacrylic acid, ammonia water, anhydrous ethanol and tetraethyl orthosilicate is (1-2): (10-15): (150-180): (2-3);

[0016] The mass fraction of the ammonia water is 15-20wt.%;

[0017] The stirring time after adding the ethyl orthosilicate is 6-8 hours.

[0018] As a preferred technical solution of the present invention, in step S1,

[0019] The trifluoropropyltriethoxysilane solution is prepared by dissolving trifluoropropyltriethoxysilane in anhydrous ethanol to prepare the trifluoropropyltriethoxysilane solution, adding deionized water to the trifluoropropyltriethoxysilane solution and adjusting the pH, wherein the mass fraction of the trifluoropropyltriethoxysilane solution is 5-10 wt.%, and the pH range of the adjustment is 4-5;

[0020] The first temperature is 40-50°C;

[0021] The mass ratio of the trifluoropropyltriethoxysilane solution after pH adjustment to deionized water is (10-15): (1-2);

[0022] The reaction time of adding the pH-adjusted trifluoropropyltriethoxysilane solution is 2-3 hours.

[0023] As a preferred technical solution of the present invention, in step S2,

[0024] The mass ratio of the cyclopropylethyltrimethylsilyl acetal to 1H,1H,5H-octafluoropentyl-1,1,2,2-tetrafluoroethyl ether is (1-2):(70-80);

[0025] The mass ratio of the benzoyl peroxide, 1H,1H-perfluorooctyl acrylate and another portion of 1H,1H,5H-octafluoropentyl-1,1,2,2-tetrafluoroethyl ether is (0.5-1.0):(20-30):(40-50);

[0026] The second temperature is 65-75°C.

[0027] As a preferred technical solution of the present invention, in step S2,

[0028] The reaction time after the reaction solution B is added to the reaction solution A is 6-8h;

[0029] The third temperature is 80-90° C.

[0030] The reaction time at the third temperature is 2-3 hours.

[0031] As a preferred technical solution of the present invention, in step S3,

[0032] The mass ratio of the methyl methacrylate, octyl acrylate, hydroxyethyl acrylate, 2-hydroxyethyl acrylic acid, bis-3-methacryloxypropylated tetramethyldisiloxane, azobisisobutyronitrile, dodecanethiol, ethyl acetate, triethylamine and deionized water is (6-8): (6-8): (10-12): (1-3): (0.5-1): (0.2-0.5): (0.1-0.3): (40-50): (2-4): (20-30).

[0033] As a preferred technical solution of the present invention, in step S3,

[0034] The fourth temperature is 90-100° C.;

[0035] The reaction time at the fourth temperature is 1-2 hours.

[0036] As a preferred technical solution of the present invention, in step S3,

[0037] The fifth temperature is 100-110° C.;

[0038] The reaction time of the fifth temperature is 6-8h;

[0039] The stirring time after adding triethylamine is 30-50min.

[0040] As a preferred technical solution of the present invention, in step S4,

[0041] The cross-linking agent is methylated high imino melamine;

[0042] The mass fraction of the cross-linking agent solution is 20-30wt.%;

[0043] The mass ratio of the modified SiO2 sol, coating solution, coating precursor solution, and crosslinking agent solution is (30-50): (20-30): (30-50): (5-10);

[0044] The stirring time after adding the cross-linking agent is 20-30 minutes.

[0045] In a second aspect, the present invention provides an anti-reflective self-cleaning coating for photovoltaic modules prepared by the preparation method described in the first aspect.

[0046] Compared with the prior art, the present invention has the following beneficial effects:

[0047] (1) Silica particles were prepared by a sol-gel process. The surface of the SiO2 nanoparticles was fluorinated with trifluoropropyltriethoxysilane. The hydroxyl groups on the surface of the SiO2 nanoparticles underwent a condensation reaction to form a strong silicon-oxygen bond. At the same time, the trifluoropropyl groups were exposed on the SiO2 surface, which reduced the surface energy and formed a hydrophobic coating, thereby achieving a self-cleaning function. The strong bonding of the silicon-oxygen bond improved the weather resistance and chemical stability of the coating, and it can maintain its performance in long-term exposure environments.

[0048] (2) Cyclopropylethyltrimethylsilyl acetal decomposes to generate phenyl radicals, which react with 1H,1H-perfluorooctyl acrylate to form a long-chain perfluoroacrylate polymer. Perfluorooctyl side chains are introduced into the molecular structure. The low refractive index of the perfluoro chain segment effectively reduces the reflected light loss at the optical interface, improves the light transmittance, and brings low surface energy and hydrophobic properties.

[0049] (3) Multiple monomers form copolymers through free radical polymerization. The double bonds contained in acrylate monomers form long-chain copolymers through free radical-initiated polymerization. The core feature of methylated high-imino melamine as a crosslinking agent is that its molecular structure contains a large number of active imino and methoxy groups. The methoxy group reacts with the hydroxyl group to generate ether bonds, forming a dense three-dimensional crosslinked network. The imino group can react with the carboxyl group or the hydroxyl group to form a more stable bonding structure, further increasing the crosslinking density. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] Figure 1A flow chart of a method for preparing an antireflective and self-cleaning coating for a photovoltaic module provided in Examples 1-6 of the present invention;

[0051] Figure 2 This is a SEM image of the silicon dioxide particles prepared in Example 1 of the present invention;

[0052] Figure 3 : is the contact angle between the photovoltaic antireflective self-cleaning coating prepared in Example 1 of the present invention and water. DETAILED DESCRIPTION

[0053] The technical solutions of the present invention are described in detail below in conjunction with specific embodiments and their accompanying drawings. The embodiments described herein are specific embodiments of the present invention and are used to illustrate the concept of the present invention; these descriptions are explanatory and exemplary and should not be understood as limiting the embodiments of the present invention and the scope of protection of the present invention. In addition to the embodiments described herein, those skilled in the art can also adopt obvious other technical solutions based on the contents disclosed in the claims of this application and its specification, including technical solutions that adopt any obvious replacements and modifications to the embodiments described herein.

[0054] The chemical reagents used in the examples and comparative examples of the present invention are all commercially available products, and their brands, specifications and manufacturer information are as follows:

[0055] Polyacrylic acid, solid content ≥40%, Shandong Taihe Science and Technology Co., Ltd.;

[0056] Ammonia water, purity 25wt.%~28wt.%, Shandong Qingjia Chemical Co., Ltd.;

[0057] Anhydrous ethanol, purity ≥99%, Yonghua Chemical Co., Ltd.;

[0058] Tetraethyl orthosilicate, purity ≥98%, Shandong Sike New Materials Co., Ltd.;

[0059] Trifluoropropyltriethoxysilane, purity ≥98%, Quzhou Dongming Chemical Co., Ltd.

[0060] Cyclopropylethyltrimethylsilyl acetal, purity ≥99%, Merck KGaA, Darmstadt, Germany;

[0061] 1H,1H,5H-octafluoropentyl-1,1,2,2-tetrafluoroethyl ether, purity ≥98%, Shanghai Aladdin Biochemical Technology Co., Ltd. Benzoyl peroxide, purity ≥99%, Taizhou Zhongteng Chemical Materials Co., Ltd.

[0062] 1H,1H-Perfluorooctyl acrylate, purity ≥95%, Changzhou New Fluoro Chemical Co., Ltd.;

[0063] Methyl methacrylate, purity ≥98%, Shandong Hefeng Chemical Co., Ltd.;

[0064] Octyl acrylate, purity ≥98%, Shandong Derui Polymer Materials Co., Ltd.;

[0065] Hydroxyethyl acrylate, purity ≥98%, Shandong Derui Polymer Materials Co., Ltd.;

[0066] 2-Hydroxyethyl acrylic acid, purity ≥99%, Guangzhou Sanwang Chemical Materials Co., Ltd.;

[0067] Bis-3-methylpropenyloxypropylated tetramethyldisiloxane, purity ≥95%, Aike Fine Chemicals Co., Ltd.

[0068] Azobisisobutyronitrile, purity ≥99%, Jinan Century Tongda Chemical Co., Ltd.

[0069] Dodecanethiol, purity ≥99%, Jinan Century Tongda Chemical Co., Ltd.

[0070] Ethyl acetate, purity ≥99%, Shandong Xuanhai Chemical Co., Ltd.;

[0071] Triethylamine, purity ≥99%, Shandong Liding Chemical Technology Co., Ltd.

[0072] Methylated high-imino melamine, purity ≥99%, Shanghai Kaiyin Chemical Co., Ltd.

[0073] Propylene glycol monomethyl ether acetate, purity ≥99%, Jiangsu Dena Chemical Co., Ltd.

[0074] Other raw materials can be purchased from the market.

[0075] Example 1

[0076] This embodiment provides a method for preparing an antireflective self-cleaning coating for a photovoltaic module. Figure 1 As shown, the preparation method specifically includes the following steps:

[0077] Step S1, dispersing 1.2 g of polyacrylic acid in 12 g of 16 wt.% ammonia water to obtain a mixed solution, adding the mixed solution to 155 g of anhydrous ethanol and stirring continuously at 310 rpm for 32 minutes, then adding 2.2 g of tetraethyl orthosilicate and stirring continuously at 310 rpm for 6.3 hours to form a SiO2 particle sol, dissolving trifluoropropyltriethoxysilane in anhydrous ethanol to prepare a 5.6 wt.% trifluoropropyltriethoxysilane solution, adding 1.3 g of deionized water to the trifluoropropyltriethoxysilane solution and adjusting the pH to 4.2, heating the SiO2 particle sol to 42° C. and adding 13 g of the pH-adjusted trifluoropropyltriethoxysilane solution, and continuing the reaction for 2.1 hours to obtain a modified SiO2 sol;

[0078] Step S2, 1.6 g of cyclopropylethyltrimethylsilyl acetal was uniformly dispersed in 73 g of 1H,1H,5H-octafluoropentyl-1,1,2,2-tetrafluoroethyl ether, the temperature was raised to 67° C. after adding a reflux condenser, and the reaction was stirred at 220 rpm for 2.1 hours to obtain reaction solution A, 0.58 g of benzoyl peroxide and 23 g of 1H,1H-perfluorooctyl acrylate were dispersed in 46 g of 1H,1H,5H-octafluoropentyl-1,1,2,2-tetrafluoroethyl ether to obtain reaction solution B, the reaction solution B was added to the reaction solution A, the reaction was continued at 67° C. for 6.5 hours, then the temperature was raised to 82° C. for 2.3 hours, and the reaction was cooled to room temperature after the reaction was completed to obtain a coating solution;

[0079] Step S3, under N2 atmosphere, 6.3 g of methyl methacrylate, 6.4 g of octyl acrylate, 10.8 g of hydroxyethyl acrylate, 1.6 g of 2-hydroxyethyl acrylic acid, 0.59 g of bis-3-methacryloxypropylated tetramethyldisiloxane, 0.26 g of azobisisobutyronitrile, and 0.14 g of dodecanethiol were mixed in sequence, added to 44 g of ethyl acetate at 92°C, and the reaction was continued for 1.2 h. The temperature was then raised to 103°C and the reaction was continued for 6.3 h. After the reaction was completed, the mixture was cooled to room temperature to obtain a mixture, 2.1 g of triethylamine was added to the mixture and stirred at 320 rpm for 36 min. 23 g of deionized water was then added and stirred at 880 rpm for 24 min to obtain a coating precursor;

[0080] Step S4: dispersing methylated high-imino melamine in propylene glycol monomethyl ether acetate to form a 26 wt.% methylated high-imino melamine solution; mixing 36 g of modified SiO2 sol, 24 g of coating solution, and 38 g of coating precursor; and then adding 5.8 g of crosslinking agent methylated high-imino melamine solution and stirring continuously at 230 rpm for 26 minutes to obtain an anti-reflective self-cleaning coating for photovoltaic modules.

[0081] Figure 2This is a SEM image of the silicon dioxide particles prepared in this example; Figure 3 The contact angle of the photovoltaic antireflective self-cleaning coating prepared in this example with water is 145°, indicating that the coating has obvious hydrophobicity.

[0082] Example 2

[0083] This embodiment provides a method for preparing an antireflective self-cleaning coating for a photovoltaic module. Figure 1 As shown, the preparation method specifically includes the following steps:

[0084] Step S1, dispersing 1.5g of polyacrylic acid in 13g of 18wt.% ammonia water to obtain a mixed solution, adding the mixed solution to 159g of anhydrous ethanol and stirring continuously at 340rpm for 36min, then adding 2.5g of tetraethyl orthosilicate and stirring continuously at 340rpm for 6.6h to form a SiO2 particle sol, dissolving trifluoropropyltriethoxysilane in anhydrous ethanol to prepare a 5.9wt.% trifluoropropyltriethoxysilane solution, adding 1.4g of deionized water to the trifluoropropyltriethoxysilane solution and adjusting the pH to 4.6, heating the SiO2 particle sol to 44°C and adding 12g of the pH-adjusted trifluoropropyltriethoxysilane solution, and continuing the reaction for 2.3h to obtain a modified SiO2 sol;

[0085] Step S2: 1.2 g of cyclopropylethyltrimethylsilyl acetal was uniformly dispersed in 74 g of 1H,1H,5H-octafluoropentyl-1,1,2,2-tetrafluoroethyl ether. The mixture was heated to 69° C. after adding a reflux condenser, and stirred at 240 rpm for 2.3 hours to obtain a reaction solution A. 0.63 g of benzoyl peroxide and 22 g of 1H,1H-perfluorooctyl acrylate were dispersed in 42 g of 1H,1H,5H-octafluoropentyl-1,1,2,2-tetrafluoroethyl ether to obtain a reaction solution B. The reaction solution B was added to the reaction solution A, and the reaction was continued at 69° C. for 6.9 hours. The temperature was then raised to 85° C. for 2.5 hours. After the reaction was completed, the mixture was cooled to room temperature to obtain a coating solution.

[0086] Step S3, under N2 atmosphere, 6.4g of methyl methacrylate, 6.1g of octyl acrylate, 10.5g of hydroxyethyl acrylate, 1.2g of 2-hydroxyethyl acrylic acid, 0.63g of bis-3-methacryloxypropylated tetramethyldisiloxane, 0.33g of azobisisobutyronitrile, and 0.18g of dodecanethiol were mixed in sequence, added to 42g of ethyl acetate at 95°C, and the reaction was continued for 1.5h, then the temperature was raised to 107°C and the reaction was continued for 7.2h. After the reaction was completed, the mixture was cooled to room temperature to obtain a mixture, and 2.5g of triethylamine was added to the mixture, and the mixture was stirred at 350rpm for 32min. Then, 24g of deionized water was added, and the mixture was stirred at 900rpm for 28min to obtain a coating precursor;

[0087] Step S4: Disperse methylated high-imino melamine in propylene glycol monomethyl ether acetate to form a 22 wt.% methylated high-imino melamine solution, mix 33 g of modified SiO2 sol, 26 g of coating solution, and 33 g of coating precursor, then add 6.1 g of crosslinker methylated high-imino melamine solution and continue stirring at 250 rpm for 24 minutes to obtain an anti-reflective self-cleaning coating for photovoltaic modules.

[0088] Example 3

[0089] This embodiment provides a method for preparing an antireflective self-cleaning coating for a photovoltaic module. Figure 1 As shown, the preparation method specifically includes the following steps:

[0090] Step S1, dispersing 1.1 g of polyacrylic acid in 11 g of 15.5 wt.% ammonia water to obtain a mixed solution, adding the mixed solution to 163 g of anhydrous ethanol and stirring continuously at 330 rpm for 37 minutes, then adding 2.1 g of tetraethyl orthosilicate and stirring continuously at 330 rpm for 7.1 hours to form a SiO2 particle sol, dissolving trifluoropropyltriethoxysilane in anhydrous ethanol to prepare a 6.4 wt.% trifluoropropyltriethoxysilane solution, adding 1.1 g of deionized water to the trifluoropropyltriethoxysilane solution and adjusting the pH to 4.4, heating the SiO2 particle sol to 41° C. and adding 10 g of the pH-adjusted trifluoropropyltriethoxysilane solution, and continuing the reaction for 2.0 hours to obtain a modified SiO2 sol;

[0091] Step S2: 1.3 g of cyclopropylethyltrimethylsilyl acetal was uniformly dispersed in 71 g of 1H,1H,5H-octafluoropentyl-1,1,2,2-tetrafluoroethyl ether. The mixture was heated to 70° C. after adding a reflux condenser, and stirred at 270 rpm for 2.6 hours to obtain a reaction solution A. 0.68 g of benzoyl peroxide and 25 g of 1H,1H-perfluorooctyl acrylate were dispersed in 46 g of 1H,1H,5H-octafluoropentyl-1,1,2,2-tetrafluoroethyl ether to obtain a reaction solution B. The reaction solution B was added to the reaction solution A, and the reaction was continued at 70° C. for 6.4 hours. The temperature was then raised to 83° C. for 2.2 hours. After the reaction was completed, the mixture was cooled to room temperature to obtain a coating solution.

[0092] Step S3, under N2 atmosphere, 7.1g of methyl methacrylate, 7.3g of octyl acrylate, 11.3g of hydroxyethyl acrylate, 1.9g of 2-hydroxyethyl acrylic acid, 0.68g of bis-3-methacryloxypropylated tetramethyldisiloxane, 0.37g of azobisisobutyronitrile, and 0.22g of dodecanethiol were mixed in sequence, added to 44g of ethyl acetate at 96°C, and the reaction was continued for 1.6h, then the temperature was raised to 105°C and the reaction was continued for 6.7h. After the reaction was completed, the mixture was cooled to room temperature to obtain a mixture, 2.8g of triethylamine was added to the mixture and stirred at 360rpm for 37min, and then 20g of deionized water was added and stirred at 930rpm for 23min to obtain a coating precursor;

[0093] Step S4: Disperse methylated high-imino melamine in propylene glycol monomethyl ether acetate to form a 26 wt.% methylated high-imino melamine solution, mix 41 g of modified SiO2 sol, 23 g of coating solution, and 39 g of coating precursor, then add 6.4 g of crosslinker methylated high-imino melamine solution and continue stirring at 230 rpm for 22 minutes to obtain an anti-reflective self-cleaning coating for photovoltaic modules.

[0094] Example 4

[0095] This embodiment provides a method for preparing an antireflective self-cleaning coating for a photovoltaic module. Figure 1 As shown, the preparation method specifically includes the following steps:

[0096] Step S1, dispersing 1.7 g of polyacrylic acid in 14 g of 17.5 wt.% ammonia water to obtain a mixed solution, adding the mixed solution to 169 g of anhydrous ethanol and stirring continuously at 380 rpm for 42 minutes, then adding 2.3 g of tetraethyl orthosilicate and stirring continuously at 380 rpm for 7.2 hours to form a SiO2 particle sol, dissolving trifluoropropyltriethoxysilane in anhydrous ethanol to prepare a 7.6 wt.% trifluoropropyltriethoxysilane solution, adding 1.6 g of deionized water to the trifluoropropyltriethoxysilane solution and adjusting the pH to 4.7, heating the SiO2 particle sol to 46° C. and adding 13.5 g of the pH-adjusted trifluoropropyltriethoxysilane solution, and continuing the reaction for 2.6 hours to obtain a modified SiO2 sol;

[0097] Step S2: 1.6 g of cyclopropylethyltrimethylsilyl acetal was uniformly dispersed in 74 g of 1H,1H,5H-octafluoropentyl-1,1,2,2-tetrafluoroethyl ether. The mixture was heated to 73° C. after adding a reflux condenser, and stirred at 220 rpm for 2.4 hours to obtain a reaction solution A. 0.77 g of benzoyl peroxide and 26 g of 1H,1H-perfluorooctyl acrylate were dispersed in 43 g of 1H,1H,5H-octafluoropentyl-1,1,2,2-tetrafluoroethyl ether to obtain a reaction solution B. The reaction solution B was added to the reaction solution A, and the reaction was continued at 73° C. for 7.1 hours, then the temperature was increased to 81° C. for 2.4 hours. After the reaction was completed, the mixture was cooled to room temperature to obtain a coating solution.

[0098] Step S3, under N2 atmosphere, 6.6 g of methyl methacrylate, 7.0 g of octyl acrylate, 10.8 g of hydroxyethyl acrylate, 2.3 g of 2-hydroxyethyl acrylic acid, 0.76 g of bis-3-methacryloxypropylated tetramethyldisiloxane, 0.41 g of azobisisobutyronitrile, and 0.20 g of dodecanethiol were mixed in sequence, added to 41 g of ethyl acetate at 92°C, and the reaction was continued for 1.3 h. The temperature was then raised to 102°C and the reaction was continued for 7.2 h. After the reaction was completed, the mixture was cooled to room temperature to obtain a mixture, and 3.2 g of triethylamine was added to the mixture and stirred at 320 rpm for 42 min. Then, 23 g of deionized water was added and the mixture was stirred at 950 rpm for 22 min to obtain a coating precursor;

[0099] Step S4: Disperse methylated high-imino melamine in propylene glycol monomethyl ether acetate to form a 21 wt.% methylated high-imino melamine solution, mix 43 g of modified SiO2 sol, 25 g of coating solution, and 45 g of coating precursor, then add 7.6 g of crosslinker methylated high-imino melamine solution and continue stirring at 260 rpm for 25 minutes to obtain an anti-reflective self-cleaning coating for photovoltaic modules.

[0100] Example 5

[0101] This embodiment provides a method for preparing an antireflective self-cleaning coating for a photovoltaic module. Figure 1 As shown, the preparation method specifically includes the following steps:

[0102] Step S1, dispersing 1.8 g of polyacrylic acid in 15 g of 16 wt.% ammonia water to obtain a mixed solution, adding the mixed solution to 173 g of anhydrous ethanol and stirring continuously at 340 rpm for 44 minutes, then adding 2.6 g of tetraethyl orthosilicate and stirring continuously at 340 rpm for 7.4 hours to form a SiO2 particle sol, dissolving trifluoropropyltriethoxysilane in anhydrous ethanol to prepare a 7.9 wt.% trifluoropropyltriethoxysilane solution, adding 1.5 g of deionized water to the trifluoropropyltriethoxysilane solution and adjusting the pH to 4.3, heating the SiO2 particle sol to 42° C. and adding 12.7 g of the pH-adjusted trifluoropropyltriethoxysilane solution, and continuing the reaction for 2.4 hours to obtain a modified SiO2 sol;

[0103] Step S2: 1.8 g of cyclopropylethyltrimethylsilyl acetal was uniformly dispersed in 78 g of 1H,1H,5H-octafluoropentyl-1,1,2,2-tetrafluoroethyl ether. The mixture was heated to 75° C. after adding a reflux condenser, and stirred at 260 rpm for 2.7 hours to obtain a reaction solution A. 0.84 g of benzoyl peroxide and 23 g of 1H,1H-perfluorooctyl acrylate were dispersed in 47 g of 1H,1H,5H-octafluoropentyl-1,1,2,2-tetrafluoroethyl ether to obtain a reaction solution B. The reaction solution B was added to the reaction solution A, and the reaction was continued at 75° C. for 7.6 hours, then the temperature was increased to 86° C. for 2.8 hours. After the reaction was completed, the mixture was cooled to room temperature to obtain a coating solution.

[0104] Step S3, under N2 atmosphere, 7.4g of methyl methacrylate, 7.8g of octyl acrylate, 11.5g of hydroxyethyl acrylate, 2.6g of 2-hydroxyethyl acrylic acid, 0.79g of bis-3-methacryloxypropylated tetramethyldisiloxane, 0.43g of azobisisobutyronitrile, and 0.23g of dodecanethiol were mixed in sequence, added to 44g of ethyl acetate at 95°C, and the reaction was continued for 1.7h, then the temperature was raised to 107°C and the reaction was continued for 7.1h. After the reaction was completed, the mixture was cooled to room temperature to obtain a mixture, and 2.7g of triethylamine was added to the mixture, and the mixture was stirred at 340rpm for 40min. Then, 24g of deionized water was added, and the mixture was stirred at 1000rpm for 24min to obtain a coating precursor;

[0105] Step S4: Disperse methylated high-imino melamine in propylene glycol monomethyl ether acetate to form a 24 wt.% methylated high-imino melamine solution, mix 46 g of modified SiO2 sol, 23 g of coating solution, and 42 g of coating precursor, then add 8.4 g of crosslinker methylated high-imino melamine solution and continue stirring at 220 rpm for 28 minutes to obtain an anti-reflective self-cleaning coating for photovoltaic modules.

[0106] Example 6

[0107] This embodiment provides a method for preparing an antireflective self-cleaning coating for a photovoltaic module. Figure 1 As shown, the preparation method specifically includes the following steps:

[0108] Step S1, dispersing 1.3 g of polyacrylic acid in 12 g of 17 wt.% ammonia water to obtain a mixed solution, adding the mixed solution to 162 g of anhydrous ethanol and stirring continuously at 350 rpm for 40 minutes, then adding 2.2 g of tetraethyl orthosilicate and stirring continuously at 350 rpm for 7.0 hours to form a SiO2 particle sol, dissolving trifluoropropyltriethoxysilane in anhydrous ethanol to prepare an 8.2 wt.% trifluoropropyltriethoxysilane solution, adding 1.7 g of deionized water to the trifluoropropyltriethoxysilane solution and adjusting the pH to 4.8, heating the SiO2 particle sol to 46° C. and adding 13.6 g of the pH-adjusted trifluoropropyltriethoxysilane solution, and continuing the reaction for 2.7 hours to obtain a modified SiO2 sol;

[0109] Step S2: 1.5 g of cyclopropylethyltrimethylsilyl acetal was uniformly dispersed in 73 g of 1H,1H,5H-octafluoropentyl-1,1,2,2-tetrafluoroethyl ether. The mixture was heated to 72° C. after adding a reflux condenser, and stirred at 240 rpm for 2.3 h to obtain a reaction solution A. 0.81 g of benzoyl peroxide and 26 g of 1H,1H-perfluorooctyl acrylate were dispersed in 42 g of 1H,1H,5H-octafluoropentyl-1,1,2,2-tetrafluoroethyl ether to obtain a reaction solution B. The reaction solution B was added to the reaction solution A, and the reaction was continued at 72° C. for 7.6 h, then the temperature was increased to 88° C. for 2.5 h. After the reaction was completed, the mixture was cooled to room temperature to obtain a coating solution.

[0110] Step S3, under N2 atmosphere, 7.3g of methyl methacrylate, 7.1g of octyl acrylate, 10.7g of hydroxyethyl acrylate, 2.2g of 2-hydroxyethyl acrylic acid, 0.86g of bis-3-methacryloxypropylated tetramethyldisiloxane, 0.41g of azobisisobutyronitrile, and 0.26g of dodecanethiol were mixed in sequence, added to 47g of ethyl acetate at 97°C, and the reaction was continued for 1.5h, then the temperature was raised to 109°C and the reaction was continued for 7.3h. After the reaction was completed, the mixture was cooled to room temperature to obtain a mixture, 2.4g of triethylamine was added to the mixture and stirred at 360rpm for 43min, and then 27g of deionized water was added and stirred at 930rpm for 27min to obtain a coating precursor;

[0111] Step S4: dispersing methylated high-imino melamine in propylene glycol monomethyl ether acetate to form a 28 wt.% methylated high-imino melamine solution; mixing 41 g of modified SiO2 sol, 25 g of coating solution, and 39 g of coating precursor; and then adding 8.9 g of crosslinking agent methylated high-imino melamine solution and stirring continuously at 260 rpm for 24 min to obtain an anti-reflective self-cleaning coating for photovoltaic modules.

[0112] Comparative Example 1

[0113] This comparative example provides a method for preparing an antireflective self-cleaning coating for photovoltaic modules. The difference from Example 1 is that the mass of the trifluoropropyltriethoxysilane solution after pH adjustment in step S1 is adjusted to 18 g, which is 5 g more than that in Example 1. The increased mass is deducted from the polyacrylic acid, ammonia water, anhydrous ethanol and tetraethyl orthosilicate in equal proportions, so that the mass ratio between the components other than the trifluoropropyltriethoxysilane solution after pH adjustment remains unchanged. The other process parameters and operating conditions are exactly the same as those in Example 1.

[0114] Comparative Example 2

[0115] This comparative example provides a method for preparing an antireflective self-cleaning coating for photovoltaic modules. The difference from Example 1 is that the mass of the trifluoropropyltriethoxysilane solution after pH adjustment in step S1 is adjusted to 8 g, which is 5 g less than that in Example 1. The reduced mass is added in equal proportion to polyacrylic acid, ammonia water, anhydrous ethanol and tetraethyl orthosilicate, so that the mass ratio of the components other than the trifluoropropyltriethoxysilane solution after pH adjustment remains unchanged. The other process parameters and operating conditions are exactly the same as those in Example 1.

[0116] Comparative Example 3

[0117] This comparative example provides a method for preparing an antireflective self-cleaning coating for a photovoltaic module. The difference from Example 1 is that the mass of cyclopropylethyltrimethylsilyl acetal in step S2 is adjusted to 2.4 g, which is 0.8 g more than that in Example 1. The increased mass is deducted from 1H,1H,5H-octafluoropentyl-1,1,2,2-tetrafluoroethyl ether, benzoyl peroxide and 1H,1H-perfluorooctyl acrylate in equal proportions, so that the mass ratio between the components other than cyclopropylethyltrimethylsilyl acetal remains unchanged. The other process parameters and operating conditions are exactly the same as those in Example 1.

[0118] Comparative Example 4

[0119] This comparative example provides a method for preparing an antireflective self-cleaning coating for a photovoltaic module. The difference from Example 1 is that the mass of cyclopropylethyltrimethylsilyl acetal in step S2 is adjusted to 0.8 g, which is 0.8 g less than that in Example 1. The reduced mass is proportionally added to 1H,1H,5H-octafluoropentyl-1,1,2,2-tetrafluoroethyl ether, benzoyl peroxide and 1H,1H-perfluorooctyl acrylate, so that the mass ratio between the components other than cyclopropylethyltrimethylsilyl acetal remains unchanged. The other process parameters and operating conditions are exactly the same as those in Example 1.

[0120] The test standard for light transmittance of the coating in the present invention is GB / T 2410-2008; the test standard for stain resistance is GB / T9780-2013; the test standard for weather resistance is GB / T 14522-2008; and the test standard for adhesion is GB / T 9286-2021. The test samples are shown in Table 1.

[0121] Table 1 Test results of antireflective self-cleaning coating for photovoltaic modules of Examples 1-6 and Comparative Examples 1-4

[0122] Light transmittance (%) Stain resistance Weather resistance / 300h Adhesion Example 1 93 Level 0 No bubbles, no cracks Level 0 Example 2 94 Level 0 No bubbles, no cracks Level 0 Example 3 92 Level 0 No bubbles, no cracks Level 0 Example 4 93 Level 0 No bubbles, no cracks Level 0 Example 5 91 Level 0 No bubbles, no cracks Level 0 Example 6 94 Level 0 No bubbles, no cracks Level 0 Comparative Example 1 86 Level 1 Slight cracking Level 1 Comparative Example 2 84 Level 1 Slight cracking Level 2 Comparative Example 3 83 Level 1 There are bubbles Level 2 Comparative Example 4 84 Level 2 Slight cracking Level 1

[0123] As can be seen from the data in Table 1, the transmittance, stain resistance, weather resistance, and adhesion of Comparative Example 1 are all lower than those of Example 1; the transmittance, stain resistance, weather resistance, and adhesion of Comparative Example 2 are all lower than those of Example 1. This is because the mass of the trifluoropropyltriethoxysilane solution after pH adjustment in Comparative Example 1 is excessive, and it does not completely react with the surface of the SiO2 particles, remaining in the coating to form small molecular impurities or oligomers. These products are difficult to form a stable structure after curing, thereby affecting the adhesion of the coating; excessive trifluoropropyl chain groups accumulate on the surface of the SiO2 particles, resulting in the formation of irregular microscopic rough structures between the particles, reducing the transmittance of the coating; excessive unreacted trifluoropropyltriethoxysilane may undergo photochemical degradation under the action of ultraviolet light, releasing small molecular substances, thereby destroying the chemical stability of the coating and reducing weather resistance; excessive use of trifluoropropyltriethoxysilane may cause areas of uneven molecular arrangement on the surface. These areas have relatively high surface energy, weakening the local hydrophobicity, and reducing the overall stain resistance of the coating. In Comparative Example 2, the quality of the trifluoropropyltriethoxysilane solution after pH adjustment is insufficient. When the surface modification of the SiO2 particles is insufficient, fewer chemical bonds are formed between the particles and the substrate, resulting in reduced interfacial adhesion and poor adhesion. The residual hydroxyl groups on the surface of the SiO2 particles will increase the polarity unevenness of the coating, causing light scattering and reducing the transmittance of the coating. The exposed surface of the SiO2 particles is more likely to react with water and oxygen in the environment, and the coating may deteriorate or crack in the long term, and its weather resistance will decrease. The surface energy of the incompletely modified SiO2 particles is higher, the hydrophilicity is stronger, and they are more likely to adsorb dirt and moisture, resulting in a decrease in stain resistance.

[0124] The light transmittance, stain resistance, weather resistance, and adhesion of Comparative Example 3 were all lower than those of Example 1; the light transmittance, stain resistance, weather resistance, and adhesion of Comparative Example 4 were all lower than those of Example 1. This is because the amount of cyclopropylethyltrimethylsilyl acetal in Comparative Example 3 was excessive, and the excess cyclopropylethyl acetal did not fully participate in cross-linking during the reaction, leaving a large number of unreacted small molecules or oligomers, which may cause phase separation within the coating, weaken the chemical bonding between the coating and the substrate, and reduce adhesion; the excess cyclopropylethyl acetal may result in residual oligosiloxanes after the reaction, increasing the unevenness of the coating, possibly scattering light, and reducing the light transmittance; the unreacted cyclopropylethyl acetal may degrade under the action of ultraviolet light, generating volatile organic compounds and accelerating the aging of the coating; the excessive amount of cyclopropylethyl acetal forms an irregular branched structure, which may affect the uniformity of the surface, making the coating surface locally hydrophilic and reducing stain resistance. In Comparative Example 4, the amount of cyclopropylethyltrimethylsilyl acetal is insufficient, the cross-linking network is insufficient, the number of siloxy bonds is small, the chemical bonding between the coating and the substrate is weakened, and the adhesion is reduced; when the amount of cyclopropylethyltrimethylsilyl acetal is insufficient, the network density is insufficient, micropores or defects may form inside the coating, and scatter light; the cross-linking network is incomplete, and there is a lack of a complete protective barrier, and ultraviolet light may penetrate and destroy the coating structure, resulting in reduced weather resistance; the cyclopropyloxy group in the cyclopropylethyl acetal is broken, and reactive silanol groups can be generated. The amount of cyclopropylethyl acetal is insufficient, the bonding with fluoride is reduced, the surface energy cannot be significantly reduced, and the stain resistance is reduced.

[0125] The above description is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily thought of by those skilled in the art within the technical scope disclosed by the present invention fall within the protection scope and disclosure scope of the present invention.

Claims

1. A method for preparing an antireflective self-cleaning coating for photovoltaic modules, characterized in that: The preparation method is: Step S1, dispersing polyacrylic acid in aqueous ammonia to obtain a mixed solution, adding the mixed solution to anhydrous ethanol and continuously stirring, then adding tetraethyl orthosilicate and continuously stirring to form a SiO2 particle sol, heating the SiO2 particle sol to a first temperature and adding a pH-adjusted trifluoropropyltriethoxysilane solution, and continuing the reaction to obtain a modified SiO2 sol; Step S2, uniformly dispersing cyclopropylethyltrimethylsilyl acetal in 1H,1H,5H-octafluoropentyl-1,1,2,2-tetrafluoroethyl ether, adding a reflux condenser, heating to a second temperature and stirring for reaction to obtain reaction solution A, dispersing benzoyl peroxide and 1H,1H-perfluorooctyl acrylate in another portion of 1H,1H,5H-octafluoropentyl-1,1,2,2-tetrafluoroethyl ether to obtain reaction solution B, adding reaction solution B to reaction solution A, continuing the reaction at the second temperature, then heating to a third temperature and continuing the reaction, and cooling to room temperature after the reaction to obtain a coating solution; Step S3, under a nitrogen atmosphere, methyl methacrylate, octyl acrylate, hydroxyethyl acrylate, 2-hydroxyethyl acrylic acid, bis-3-methacryloxypropylated tetramethyldisiloxane, azobisisobutyronitrile, and dodecanethiol are sequentially mixed, and the mixture is added to ethyl acetate at a fourth temperature for continuous reaction, and the temperature is then raised to a fifth temperature for continuous reaction. After the reaction is completed, the mixture is cooled to room temperature to obtain a mixture, and triethylamine is added to the mixture and stirred, and deionized water is added and stirred continuously to obtain a coating precursor; Step S4: dispersing a crosslinker in propylene glycol monomethyl ether acetate to form a crosslinker solution, mixing the modified SiO2 sol, the coating solution and the coating precursor, and then adding the crosslinker solution and continuously stirring to obtain an anti-reflective self-cleaning coating for photovoltaic modules.

2. The method for preparing an antireflective self-cleaning coating for photovoltaic modules according to claim 1, characterized in that: In step S1, The mass ratio of the polyacrylic acid, ammonia water, anhydrous ethanol and tetraethyl orthosilicate is (1-2): (10-15): (150-180): (2-3); The mass fraction of the ammonia water is 15-20wt.%; The stirring time after adding the ethyl orthosilicate is 6-8 hours.

3. The method for preparing an antireflective self-cleaning coating for photovoltaic modules according to claim 1, characterized in that: In step S1, The trifluoropropyltriethoxysilane solution is prepared by dissolving trifluoropropyltriethoxysilane in anhydrous ethanol to prepare the trifluoropropyltriethoxysilane solution, adding deionized water to the trifluoropropyltriethoxysilane solution and adjusting the pH, wherein the mass fraction of the trifluoropropyltriethoxysilane solution is 5-10 wt.%, and the pH range of the adjustment is 4-5; The first temperature is 40-50°C; The mass ratio of the trifluoropropyltriethoxysilane solution after pH adjustment to deionized water is (10-15): (1-2); The reaction time of adding the pH-adjusted trifluoropropyltriethoxysilane solution is 2-3 hours.

4. The method for preparing an antireflective self-cleaning coating for photovoltaic modules according to claim 1, characterized in that: In step S2, The mass ratio of the cyclopropylethyltrimethylsilyl acetal to 1H,1H,5H-octafluoropentyl-1,1,2,2-tetrafluoroethyl ether is (1-2):(70-80); The mass ratio of the benzoyl peroxide, 1H,1H-perfluorooctyl acrylate and another portion of 1H,1H,5H-octafluoropentyl-1,1,2,2-tetrafluoroethyl ether is (0.5-1.0):(20-30):(40-50); The second temperature is 65-75°C.

5. The method for preparing an antireflective self-cleaning coating for photovoltaic modules according to claim 1, characterized in that: In step S2, The reaction time after the reaction solution B is added to the reaction solution A is 6-8h; The third temperature is 80-90° C. The reaction time at the third temperature is 2-3 hours.

6. The method for preparing an antireflective self-cleaning coating for photovoltaic modules according to claim 1, characterized in that: In step S3, The mass ratio of the methyl methacrylate, octyl acrylate, hydroxyethyl acrylate, 2-hydroxyethyl acrylic acid, bis-3-methacryloxypropylated tetramethyldisiloxane, azobisisobutyronitrile, dodecanethiol, ethyl acetate, triethylamine and deionized water is (6-8): (6-8): (10-12): (1-3): (0.5-1): (0.2-0.5): (0.1-0.3): (40-50): (2-4): (20-30).

7. The method for preparing an antireflective self-cleaning coating for photovoltaic modules according to claim 1, characterized in that: In step S3, The fourth temperature is 90-100° C.; The reaction time at the fourth temperature is 1-2 hours.

8. The method for preparing an antireflective self-cleaning coating for photovoltaic modules according to claim 1, characterized in that: In step S3, The fifth temperature is 100-110° C.; The reaction time of the fifth temperature is 6-8h; The stirring time after adding triethylamine is 30-50min.

9. The method for preparing an antireflective self-cleaning coating for photovoltaic modules according to claim 1, characterized in that: In step S4, The cross-linking agent is methylated high imino melamine; The mass fraction of the cross-linking agent solution is 20-30wt.%; The mass ratio of the modified SiO2 sol, coating solution, coating precursor solution, and crosslinking agent solution is (30-50): (20-30): (30-50): (5-10); The stirring time after adding the cross-linking agent is 20-30 minutes.

10. An antireflective self-cleaning coating for photovoltaic modules obtained according to the preparation method according to any one of claims 1 to 9.

Images