Gas uniformizing device suitable for advanced photovoltaic coating

Abstract

The invention relates to the technical field of photovoltaic manufacturing, in particular to an advanced photovoltaic coating gas uniformizing device which comprises an upper cover plate, a lower body, a left sealing plate and a right sealing plate, the bottom of the upper cover plate and the bottom of the lower body are fixedly connected in an airtight mode to form a device body, and a gas uniformizing channel is formed in the device body. The air uniformizing channel sequentially comprises an air inlet, an air inlet channel, an air storage chamber, air uniformizing holes, a buffering cavity, an air resistor, a buffering cavity, an air resistor and an air outlet. The lower part of the lower main body is provided with a cooling water channel, the cooling water channel is arranged at the two sides of the air outlet, the left sealing plate and the right sealing plate are respectively and fixedly connected at the two ends of the lower part of the lower main body in an airtight manner, the left sealing plate and the right sealing plate are respectively provided with a corresponding water inlet interface or outlet interface, and the left sealing plate is also provided with a thermocouple mounting hole. The gas uniformizing device suitable for advanced photovoltaic coating can ensure the gas outlet uniformity of various reaction gases and the temperature controllability of the reaction gases, is convenient to operate, and effectively improves the yield and the efficiency of a coating process.

Description

Technical Field

[0001] The invention relates to the technical field of photovoltaic manufacturing, and in particular to a gas homogenizing device suitable for advanced photovoltaic coating. Background Art

[0002] Photovoltaic cells are the core components of the photovoltaic industry, and their performance and manufacturing costs are directly related to the competitiveness and sustainable development of the entire industry. Coating, as a key step in the manufacturing process of photovoltaic cells, plays a vital role in improving the photoelectric conversion efficiency of the cell and achieving a good passivation effect.

[0003] At present, the thin film deposition equipment widely used in traditional photovoltaic production includes PECVD (plasma enhanced chemical vapor deposition), ALD (atomic layer deposition) and PVD (physical vapor deposition). These equipment have a direct impact on production costs, output and battery performance. However, traditional thin film deposition equipment generally requires a vacuum environment, has a slow deposition speed, high machine cost, and high operating expenses, which limit the production efficiency and cost control of photovoltaic cells.

[0004] In addition, the photoelectric conversion efficiency of traditional silicon crystal technology has approached its theoretical limit, which is about 23%-27%, and it is difficult to meet the growing demand for high efficiency. Therefore, new material stacking technology came into being. This technology can greatly improve the photoelectric conversion efficiency of batteries by using a combination of multiple materials, and is regarded as the future development direction of the photovoltaic industry.

[0005] However, the realization of new material stacking technology requires a complex multi-step process route, in which the film deposition steps are the most and the process complexity is the highest. New materials are extremely sensitive to the uniformity of gas reactions, reaction time and temperature conditions. Heating for too long will damage the materials, so extremely high requirements are placed on the uniformity of film growth and temperature control. Traditional ALD technology is too slow in deposition speed and easily causes film damage, which cannot meet the strict requirements of new material stacking technology.

[0006] In response to the above problems, the new thin film deposition process has put forward higher requirements for the exhaust uniformity and temperature control of the reaction gas. However, there is still a lack of advanced equipment or devices on the market that can effectively solve these problems. Therefore, the development of a new gas homogenization device suitable for advanced photovoltaic coating to achieve more efficient and uniform gas reaction and thin film deposition is of great significance to promote the technological progress and industrial upgrading of the photovoltaic industry.

[0007] In summary, the present invention aims to provide a new type of gas uniformity device suitable for advanced photovoltaic coating, so as to solve the problems existing in traditional thin film deposition equipment in terms of gas reaction uniformity, deposition speed and temperature control, provide strong support for the realization of new material stacking technology, and promote the sustainable and healthy development of the photovoltaic industry. Summary of the invention

[0008] In order to solve the above problems, the present invention provides a gas homogenizing device suitable for advanced photovoltaic coating, which can ensure the uniformity of gas outlet of multiple reaction gases, the controllability of reaction gas temperature, and is easy to operate, thereby effectively improving the yield and efficiency of the coating process.

[0009] The technical solution of the present invention is as follows: A uniform air flow device suitable for advanced photovoltaic coating comprises an upper cover plate, a lower main body, a left sealing plate and a right sealing plate. The bottom of the upper cover plate is fixedly connected to the bottom of the lower main body in an airtight manner to form the main body of the device. An air uniform flow channel is arranged in the main body of the device. The air uniform flow channel comprises an air inlet, an air inlet channel, an air storage chamber, an air uniform hole, a buffer cavity, an air resistance, a buffer cavity, an air resistance and an air outlet in sequence. The air inlet and the air outlet are respectively arranged at the top of the upper cover plate and the bottom of the lower main body. The air storage chamber and the buffer cavity are connected through a plurality of air uniform holes. A cooling water channel is arranged at the lower part of the lower main body. The cooling water channel is arranged on both sides of the air outlet. The left sealing plate and the right sealing plate are respectively fixedly connected to the two ends of the lower part of the lower main body in an airtight manner. Corresponding water inlet interfaces or outlet interfaces are respectively arranged on the left sealing plate and the right sealing plate. A thermocouple mounting hole is also arranged on the left sealing plate.

[0010] The upper cover plate is connected to the lower body by welding.

[0011] The uniform air channel includes a single channel, a double channel and a quad channel. The single channel is arranged in the middle, and the double channel and the quad channel are cross-arranged on both sides of the single channel.

[0012] The single channel is composed of a single channel air inlet, a single channel air inlet duct, a single channel air storage chamber, a single channel air uniforming hole, a single channel buffer cavity, a single channel air resistance, a single channel buffer cavity, a single channel air resistance and a single channel air outlet in sequence. The single channel air inlet is arranged at the upper part of the upper cover plate, and the single channel air outlet is arranged at the bottom of the lower body.

[0013] The dual-channel is composed of a dual-channel air inlet, a dual-channel air inlet duct, a dual-channel air storage chamber, a dual-channel air uniforming hole, a dual-channel buffer cavity, a dual-channel air resistance, a dual-channel buffer cavity, a dual-channel air resistance and a dual-channel air outlet in sequence. The dual-channel air inlet is arranged at the upper part of the upper cover plate, and the dual-channel air outlet is arranged at the bottom of the lower body.

[0014] The four channels are composed of four-channel air inlets, four-channel air inlet ducts, four-channel air storage chambers, four-channel air uniforming holes, four-channel buffer cavities, four-channel air resistances, four-channel buffer cavities, four-channel air resistances and four-channel air outlets in sequence. The four-channel air inlets are arranged at the upper part of the upper cover plate, and the four-channel air outlets are arranged at the bottom of the lower body.

[0015] A mounting threaded hole is arranged on the top of the upper cover plate.

[0016] A positioning pin is arranged on the top of the upper cover plate.

[0017] The outer surfaces of the upper cover plate, the lower body, the left sealing plate and the right sealing plate are hard anodized.

[0018] The upper cover plate and the lower body are welded by diffusion welding.

[0019] The beneficial effects of the present invention are: 1. The present invention discloses a gas homogenizing device suitable for advanced photovoltaic coating. The gas homogenizing device suitable for advanced photovoltaic coating realizes uniform distribution and efficient deposition of reaction gas through a carefully designed gas homogenizing airway structure, including multiple links such as air inlet, air inlet, air storage chamber, gas homogenizing hole, buffer cavity, gas resistance and air outlet. In particular, through the combination of single-channel, double-channel and four-channel settings, it can flexibly respond to the needs of different coating processes, ensure that the coating uniformity is less than 3%, thereby significantly improving the coating quality and process yield.

[0020] 2. The present invention discloses a gas homogenizing device suitable for advanced photovoltaic coating. The cooling water channel arranged at the lower part of the lower main body of the gas homogenizing device is connected with the inlet and outlet water pipelines through the inlet and outlet water interfaces on the left and right sealing plates to form two cooling water circuits, thereby realizing precise control of the temperature of the gas homogenizing device. At the same time, the thermocouple mounting hole arranged on the left sealing plate allows the installation of a thermocouple to monitor and control the temperature of the gas homogenizing device in real time and in a closed loop, thereby further ensuring the temperature stability during the coating process.

[0021] 3. The present invention discloses an advanced photovoltaic coating gas homogenizing device, the outer surface of which is hard anodized. This treatment method can significantly improve the corrosion resistance of the device, extend its service life, and reduce maintenance costs.

[0022] 4. The present invention discloses an advanced photovoltaic coating gas homogenizing device, which is composed of an upper cover plate, a lower main body, a left sealing plate and a right sealing plate, and is formed by diffusion welding to ensure the sealing performance of each channel; at the same time, the positioning pins and mounting threaded holes arranged on the top of the upper cover plate make the coordinated installation of the device and the coating equipment bracket more convenient and quick, thereby improving work efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] By reading the detailed description of the preferred embodiment below, the scheme and advantages of the present application will become clear to those skilled in the art. The accompanying drawings are only for the purpose of illustrating the preferred embodiment and are not to be considered as limiting the present invention.

[0024] In the attached picture: Figure 1 A schematic diagram of a three-dimensional structure of an advanced photovoltaic coating uniform gas device according to an embodiment of the present invention Figure 1 ; Figure 2 A schematic diagram of a three-dimensional structure of an advanced photovoltaic coating uniform gas device according to an embodiment of the present invention Figure 2 ; Figure 3 A top view of a uniform gas flow device suitable for advanced photovoltaic coating according to an embodiment of the present invention; Figure 4 for Figure 3 Middle AA section view; Figure 5 for Figure 3 Middle BB section view; Figure 6 for Figure 3 Middle CC section view; Figure 7 for Figure 3 Middle DD section view; Figure 8 A top view of a uniform gas flow device for advanced photovoltaic coating according to an embodiment of the invention; The components represented by the reference numerals in the figure are: The present invention: 1. upper cover plate; 2. lower body; 3. left sealing plate; 4. right sealing plate; 5. positioning pin; 6. single channel; 7. double channel; 8. four channels; 9. cooling water channel; 101. four-channel air inlet; 102. single-channel air inlet; 103. double-channel air inlet; 104. mounting threaded hole; 301. thermocouple mounting hole; 302. water inlet interface 1; 303. water outlet interface 2; 401. water outlet interface 1; 402. water inlet interface 2; 601 , single-channel air inlet; 602, single-channel air storage chamber; 603, single-channel air uniforming hole; 604, single-channel buffer cavity; 605 single-channel air resistance; 701, dual-channel air branch ducts; 702, dual-channel air storage chamber; 703, dual-channel air uniforming holes; 704, dual-channel buffer cavity; 705 dual-channel air resistance; 801, four-channel air branch ducts; 802, four-channel air storage chamber; 803, four-channel air uniforming holes; 804, four-channel buffer cavity; 805, four-channel air resistance. DETAILED DESCRIPTION

[0025] Embodiment 1, as Figures 1 to 8As shown in the figure, the gas homogenizing device designed with advanced photovoltaic coating technology mainly includes four core components: upper cover plate 1, lower body 2, left sealing plate 3 and right sealing plate 4. The bottom of the upper cover plate 1 and the bottom of the lower body 2 are connected airtightly through a precise welding process to form the main structure of the device. This welding process is preferably diffusion welding to ensure the strength and airtightness of the connection.

[0026] The uniform gas passage is the core component of the device of the present invention, and its design is exquisite and complex, aiming to achieve uniform distribution and efficient utilization of gas. The uniform gas passage includes multiple key parts such as the gas inlet, the gas inlet, the gas storage chamber, the uniform gas hole, the buffer cavity, the gas resistance, the second buffer cavity, the second gas resistance and the gas outlet.

[0027] The air inlets are respectively arranged on the top of the upper cover plate 1 for receiving the reaction gas from the coating equipment.

[0028] The air inlet duct connects the air inlet and the air storage chamber, and is responsible for guiding the reaction gas to the air storage chamber for preliminary distribution and diffusion.

[0029] The gas storage chamber is located after the air inlet and is used to store and further diffuse the reaction gas to ensure that the gas reaches a uniform state before entering the gas uniformity hole.

[0030] The gas distribution holes are evenly distributed between the gas storage chamber and the buffer chamber, responsible for evenly distributing the gas to the buffer chamber. The number and distribution of these gas distribution holes have been carefully calculated to achieve the best gas distribution effect.

[0031] The buffer chamber is connected to the gas uniformity hole to further buffer and stabilize the flow of the gas and reduce the generation of turbulence and vortexes, thereby ensuring that the gas can flow uniformly and stably in the subsequent gas resistance part.

[0032] The air block is set after the buffer chamber to increase the flow resistance of the gas and further adjust the flow and speed of the gas. By adjusting the size and number of the air block, the gas flow can be precisely controlled to ensure that the gas reaches an ideal uniform state before the outlet.

[0033] The gas outlet is arranged at the bottom of the lower body 2 to discharge the uniformly distributed reaction gas to the coating area. The number and distribution of the gas outlets are also carefully designed to ensure that the coating area can obtain a uniform and sufficient supply of reaction gas.

[0034] In addition, the present invention also provides a variety of channel gas flow channel designs, including a single channel 6, a double channel 7 and a quad channel 8. These channels can be selected and combined according to the specific requirements of the coating process to optimize gas distribution and coating effect.

[0035] In order to control the temperature of the gas homogenizing device and prevent the coating quality from being reduced due to high temperature, the present invention provides a cooling water channel 9 at the lower part of the lower body 2. The water channel is located on both sides of the gas outlet, and the temperature of the device is reduced by circulating cooling water. The left sealing plate 3 and the right sealing plate 4 are respectively fixedly connected to the two ends of the lower part of the lower body 2 in an airtight manner, and are provided with corresponding water inlet and outlet interfaces to connect with the cooling water system.

[0036] In addition, a thermocouple mounting hole 301 is provided on the left sealing plate 3 for mounting a thermocouple to monitor the temperature of the gas homogenizing device in real time. The temperature information fed back by the thermocouple can realize closed-loop control of the temperature to ensure that the gas homogenizing device is always kept within the optimal operating temperature range.

[0037] In order to facilitate the installation and maintenance of the gas homogenizing device, the present invention provides a mounting threaded hole 104 and a positioning pin 5 on the top of the upper cover plate 1. The mounting threaded hole 104 allows the gas homogenizing device to be fixed to the bracket of the coating device using bolts or other fasteners. The positioning pin 5 is used to ensure the accurate positioning of the gas homogenizing device during the installation process to prevent performance degradation or failure caused by improper installation.

[0038] In order to improve the corrosion resistance and service life of the gas homogenizing device, the present invention performs hard anodizing treatment on the outer surfaces of the upper cover plate 1, the lower body 2, the left sealing plate 3 and the right sealing plate 4. This treatment can significantly improve the hardness and wear resistance of the material, while increasing the corrosion resistance of the surface. The surface after hard anodizing treatment is smoother, flatter and easier to clean, which helps to maintain the good performance of the gas homogenizing device and extend its service life.

[0039] The uniform air passage comprises a single channel 6 , a double channel 7 and a quad channel 8 , wherein the single channel 6 is arranged in the middle, and the double channel 7 and the quad channel 8 are cross-arranged on both sides of the single channel 6 .

[0040] The single channel 6 is composed of a single channel air inlet 102, a single channel air inlet 601, a single channel air storage chamber 602, a single channel air uniforming hole 603, a single channel buffer cavity 604, a single channel air resistance 605, a single channel buffer cavity 604, a single channel air resistance 605 and a single channel air outlet in sequence. The single channel air inlet 102 is arranged at the upper part of the upper cover plate 1, and the single channel air outlet is arranged at the bottom of the lower body 2.

[0041] The dual-channel 7 is composed of a dual-channel air inlet 103, a dual-channel air inlet 701, a dual-channel air storage chamber 702, a dual-channel air uniforming hole 703, a dual-channel buffer cavity 604, a dual-channel air resistance 705, a dual-channel buffer cavity 704, a dual-channel air resistance 705 and a dual-channel air outlet in sequence. The dual-channel air inlet 103 is arranged at the upper part of the upper cover plate 1, and the dual-channel air outlet is arranged at the bottom of the lower main body 2.

[0042] The four channels 7 are composed of four-channel air inlet 101, four-channel air inlet 801, four-channel air storage chamber 802, four-channel air uniforming hole 803, four-channel buffer cavity 804, four-channel air resistance 805, four-channel buffer cavity 804, four-channel air resistance 805 and four-channel air outlet in sequence. The four-channel air inlet 101 is arranged at the upper part of the upper cover plate 1, and the four-channel air outlet is arranged at the bottom of the lower main body 2.

[0043] Example 2, a gas homogenizing device suitable for advanced photovoltaic coating equipment includes an upper cover plate, a lower body, a left sealing plate, a right sealing plate and other components, which are welded by diffusion welding to ensure the sealing performance of each channel of the device. Three air inlets are provided on the top of the upper cover plate, which are respectively connected to the air inlet pipelines for introducing three different reaction gases. The upper cover plate and the lower body are provided with complex air inlet channels, air distribution channels, air storage chambers, gas homogenizing holes, double buffer chambers, double air resistances and air outlets to achieve a uniformity of the outlet gas flow rate of less than 3%.

[0044] There are three air inlets on the top of the upper cover, corresponding to the four-channel air inlet, the single-channel air inlet and the double-channel air inlet, for introducing three different reaction gases. The gas enters the gas distribution channel through the air inlet channel and is evenly distributed to the seven internal channels.

[0045] The seven internal channels are set as single channel, double channel and quad channel respectively, and each channel is equipped with a gas storage chamber, gas uniformity hole, double buffer cavity, double gas resistance and gas outlet. Through this series of structural designs, the uniformity of the exhaust gas flow rate is ensured to be less than 3%.

[0046] Cooling water channels are provided on both sides of the lower part of the lower body, which are connected to the inlet and outlet water pipelines through the inlet and outlet water interfaces on the left and right sealing plates to form two cooling water circuits. At the same time, a thermocouple installation hole is provided on the left sealing plate for installing a thermocouple to monitor and control the temperature of the gas homogenizing device in real time.

[0047] The outer surface of the gas homogenizing device is hard anodized to improve the corrosion resistance of the device.

[0048] The top of the upper cover is provided with a positioning pin and a threaded mounting hole for installation in conjunction with the coating equipment bracket. The device has a simple structure, is easy to disassemble and install, and has good maintainability.

[0049] The reaction gas O enters the single channel 6 from the single channel air inlet 102, enters the single channel gas storage chamber 602 through the single channel air inlet 601, and is evenly distributed through the single channel gas uniformity hole 603 after being fully diffused, and then is buffered and evenly distributed again through the double single channel buffer cavity 604 and the double single channel gas resistance 605 before being discharged.

[0050] The reaction gas M enters the dual channel 7 from the dual channel air inlet 103, and is evenly distributed into two paths through the dual channel gas distribution channel 701 to enter the dual channel gas storage chamber 702. After sufficient diffusion, the gas is evenly distributed through the dual channel gas uniformity holes 703, and then buffered and evenly distributed again through the double dual channel buffer cavity 704 and the double dual channel gas resistance 705 before being discharged.

[0051] The reaction gas N enters the four-channel 8 from the four-channel air inlet 101, and is evenly distributed into four paths through the four-channel gas distribution channel 801 to enter the four-channel gas storage chamber 802. After sufficient diffusion, the gas is evenly distributed through the four-channel gas uniformity holes 803, and then buffered and evenly distributed again through the double four-channel buffer cavity 804 and the double four-channel gas resistance 805 before being discharged.

[0052] A cooling water channel 9 is provided at the lower part of the lower body 2, which is connected to the inlet and outlet water pipelines through the inlet and outlet water interfaces on the left sealing plate 3 and the right sealing plate 4 to form a two-way cooling water circuit. A thermocouple mounting hole 301 is provided on the left sealing plate 3 for mounting a thermocouple to monitor and control the temperature of the gas homogenizing device in real time.

[0053] The gas homogenization device of the present invention provides a core component solution for the advanced new superposition manufacturing process in the photovoltaic manufacturing industry, realizes the uniformity of reaction gas deposition and the controllability of temperature, and effectively improves the yield and efficiency of the coating process. At the same time, strong corrosion resistance measures are adopted to improve the service life of the product. The device has a simple structure, is easy to disassemble and install, and has good maintainability, which provides strong support for the optimization and upgrading of photovoltaic coating processes.

Claims

1. A gas homogenizing device suitable for advanced photovoltaic coating, characterized in that: The device comprises an upper cover plate (1), a lower body (2), a left sealing plate (3) and a right sealing plate (4); the bottom of the upper cover plate (1) is fixedly connected to the bottom of the lower body (2) in an airtight manner to form a device body; an air duct is arranged in the device body; the air duct comprises an air inlet, an air inlet, an air storage chamber, an air duct hole, a buffer cavity, an air block, a buffer cavity, an air block and an air outlet in sequence; the air inlet and the air outlet are arranged at the top of the upper cover plate (1) and the bottom of the lower body (2), respectively. The air storage chamber and the buffer chamber are connected via a plurality of air-distributing holes; a cooling water channel (9) is provided at the lower portion of the lower body (2); the cooling water channel (9) is provided on both sides of the air outlet; a left sealing plate (3) and a right sealing plate (4) are respectively and airtightly fixedly connected to the two ends of the lower portion of the lower body (2); corresponding water inlet interfaces or outlet interfaces are respectively provided on the left sealing plate (3) and the right sealing plate (4); and a thermocouple mounting hole (301) is also provided on the left sealing plate (3).

2. The gas homogenizing device for advanced photovoltaic coating according to claim 1, characterized in that: The upper cover plate (1) is connected to the lower body (2) by welding.

3. The gas homogenizing device for advanced photovoltaic coating according to claim 1, characterized in that: The uniform air passage comprises a single channel (6), a double channel (7) and a quad channel (8), wherein the single channel (6) is arranged in the middle, and the double channel (7) and the quad channel (8) are cross-arranged on both sides of the single channel (6).

4. The gas homogenizing device for advanced photovoltaic coating according to claim 3, characterized in that: The single channel (6) is composed of a single channel air inlet (102), a single channel air inlet duct (601), a single channel air storage chamber (602), a single channel air uniforming hole (603), a single channel buffer cavity (604), a single channel air resistance (605), a single channel buffer cavity (604), a single channel air resistance (605) and a single channel air outlet in sequence. The single channel air inlet (102) is arranged at the upper part of the upper cover plate (1), and the single channel air outlet is arranged at the bottom of the lower body (2).

5. The gas homogenizing device for advanced photovoltaic coating according to claim 3, characterized in that: The dual channel (7) is composed of a dual channel air inlet (103), a dual channel air inlet duct (701), a dual channel air storage chamber (702), a dual channel air uniforming hole (703), a dual channel buffer cavity (604), a dual channel air resistance (705), a dual channel buffer cavity (704), a dual channel air resistance (705) and a dual channel air outlet in sequence, wherein the dual channel air inlet (103) is arranged at the upper part of the upper cover plate (1), and the dual channel air outlet is arranged at the bottom of the lower body (2).

6. The gas homogenizing device for advanced photovoltaic coating according to claim 3, characterized in that: The four channels (7) are composed in sequence of a four-channel air inlet (101), a four-channel air inlet passage (801), a four-channel air storage chamber (802), a four-channel air uniforming hole (803), a four-channel buffer cavity (804), a four-channel air resistance (805), a four-channel buffer cavity (804), a four-channel air resistance (805) and a four-channel air outlet, wherein the four-channel air inlet (101) is arranged at the upper part of the upper cover plate (1), and the four-channel air outlet is arranged at the bottom of the lower body (2).

7. The gas homogenizing device for advanced photovoltaic coating according to claim 1, characterized in that: A mounting threaded hole (104) is provided on the top of the upper cover plate (1).

8. The gas homogenizing device for advanced photovoltaic coating according to claim 1, characterized in that: A positioning pin (5) is provided on the top of the upper cover plate (1).

9. The gas homogenizing device for advanced photovoltaic coating according to claim 1, characterized in that: The outer surfaces of the upper cover plate (1), the lower body (2), the left sealing plate (3) and the right sealing plate (4) are hard anodized.

10. The gas homogenizing device for advanced photovoltaic coating according to claim 2, characterized in that: The upper cover plate (1) and the lower body (2) are welded by diffusion welding.

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