Particle analysis device and particle collection method for semiconductor processing equipment

Abstract

The invention belongs to the technical field of semiconductor equipment, and relates to a particle analysis device for semiconductor processing equipment and a particle collection method.The device comprises a first particle counter, a plasma cavity and a particle adsorption assembly, and the first particle counter is used for measuring the particle concentration and particle size in gas; the plasma chamber comprises a shell, a first anode plate and a first cathode plate, a gap is formed between the first anode plate and the first cathode plate, gas and particles enter the space between the first anode plate and the first cathode plate, the gas is ionized, the surfaces of the particles carry charges, and the particle adsorption assembly comprises a second anode plate, a second cathode plate and an insulating part. A drainage channel is formed between the second anode plate and the second cathode plate, the second anode plate and the second cathode plate are used for adsorbing particles carrying charges, the proportion of particles with different surface charge properties is counted, the collected particles can be subsequently taken out, the morphology is observed, and chemical components are analyzed; and a theoretical basis is provided for source analysis of particle pollution in semiconductor processing equipment.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor equipment, and in particular relates to a particle analysis device and a particle collection method for semiconductor process equipment. Background Art

[0002] Semiconductor chips are not only the heart of traditional consumer electronics, but also the cornerstone of the development of emerging technologies such as artificial intelligence, autonomous driving, and supercomputers. Semiconductor process equipment refers to various equipment used in the semiconductor manufacturing process, including photolithography machines, ion implantation machines, chemical vapor deposition machines, physical vapor deposition machines, etc. In recent years, equipment expenditures in the integrated circuit manufacturing industry have continued to increase, and photolithography, plasma etching, and thin film deposition equipment account for nearly 80% of total equipment expenditures. Due to the sharp increase in demand for computing power in various industries, the transistor density of integrated circuits has continued to increase, and the transistor feature size has been reduced to below 5 nm. The typical integrated circuit manufacturing process includes: thin film deposition, spin coating of photoresist, exposure, development, plasma etching, and removal of photoresist. Among them, the accuracy of fine geometric processing technologies such as photolithography, thin film deposition, and plasma etching is crucial to the manufacture of high-performance and high-yield semiconductor chips. In order to improve the quality of semiconductor chips, semiconductor process equipment generally needs to be used in a vacuum environment. Nitrogen is transported in the semiconductor process equipment as a purge gas, and the gas outlet of the semiconductor process equipment is connected to a vacuum pump through a vacuum pipeline.

[0003] However, there are a large number of high-speed moving parts in the vacuum chamber of the extreme ultraviolet lithography machine. After friction and wear of the parts, particles will fall off the surface. Plasma etching and thin film deposition equipment use a large amount of halogen gas and its plasma to process wafers. The parts in the reaction chamber are prone to corrosion, and the surface corrosion products will also form particles after peeling off. Once the various particles in the channels of these semiconductor process equipment are adsorbed to the surface of the wafer, they will cause local circuit short circuits or open circuits, reducing the chip yield. At present, after discovering that the chip yield has decreased, the staff relies on their experience to judge the main source of particles in the production process.

[0004] Since existing devices are not convenient for collecting particles, it is difficult to analyze the properties of the particles, and the process of judging the main source of the particles lacks a theoretical basis. In addition, there are hundreds of chip production processes, so it is inefficient to judge the main source of the particles based solely on the experience of the staff. Summary of the invention

[0005] In view of this, the present invention provides a particle analysis device and a particle collection method for semiconductor process equipment, which can collect particles in semiconductor process equipment and facilitate property analysis of the particles, thereby providing a theoretical basis for the process of determining the main source of the particles and improving the judgment efficiency of the staff.

[0006] The technical solution of the present invention is: The present invention provides a particle analysis device for semiconductor process equipment, comprising: The first particle counter has an inlet for connecting to a gas outlet of a semiconductor process device, and the first particle counter is used to measure the particle concentration and particle size in the gas.

[0007] The plasma chamber comprises a shell, a first anode plate, and a first cathode plate. The first anode plate and the first cathode plate are arranged relatively to each other inside the shell. There is a distance between the first anode plate and the first cathode plate. The shell has an air inlet and an exhaust port. The air inlet is connected to the outlet of the first particle counter. When gas and particles enter between the first anode plate and the first cathode plate, the gas is ionized, so that the surface of the particles in the gas carries electric charge.

[0008] A particle adsorption component includes a second anode plate, a second cathode plate, and an insulating member. The second anode plate and the second cathode plate are arranged opposite to each other with a distance therebetween. One side of the insulating member is connected to the second anode plate, and the other side is connected to the second cathode plate. A drainage channel is formed between the second anode plate and the second cathode plate. The inlet of the drainage channel is connected to the exhaust port, and the outlet of the drainage channel is used to connect to an exhaust pump. The second anode plate and the second cathode plate are used to adsorb particles carrying a charge.

[0009] Preferably, a plurality of drainage channels are provided, and the plurality of drainage channels are arranged in parallel, one end of each drainage channel is connected to the exhaust port, and the other end of each drainage channel is connected to an air pump.

[0010] Preferably, the drainage channel comprises a plurality of curved segments, the plurality of curved segments are connected end to end in sequence, and the bending directions of two adjacent curved segments are opposite.

[0011] Preferably, the first particle counter is a light scattering nuclear particle counter.

[0012] Preferably, a pneumatic diaphragm valve is provided at the inlet of the first particle counter, and the first particle counter is connected to the gas outlet of the semiconductor process equipment through the pneumatic diaphragm valve.

[0013] Preferably, it also includes a second particle counter, which is a condensation nucleus particle counter, wherein the inlet of the condensation nucleus particle counter is connected to the air outlet of the semiconductor process equipment, and the outlet of the condensation nucleus particle counter is connected to the vacuum pump.

[0014] Preferably, it also includes a particle absorption component, which includes at least three bottle bodies, wherein the bottle bodies are used to hold absorption liquid, and the multiple bottle bodies are arranged side by side, and the inlet of the rear bottle body and the outlet of the front bottle body are connected through a connecting pipe, and the lower end of the connecting pipe at the inlet of the bottle body extends into the absorption liquid in the bottle body, and the outlet of the bottle body is arranged at the top of the bottle body, the inlet of the first bottle body is used to connect to the air outlet of the semiconductor process equipment, and the outlet of the last bottle body is used to connect to the vacuum pump.

[0015] The present invention also provides a particle collection method for semiconductor process equipment, comprising the following steps: The distance between the second anode plate and the second cathode plate is set to y .

[0016] The second anode plate is grounded, and the second cathode plate is connected to a direct current power supply.

[0017] Determine the time required for particles to move from the second anode plate to the second cathode plate or from the second cathode plate to the second anode plate t 1 .

[0018] Determine the time required for a particle to move from the inlet of the drainage channel to the outlet of the drainage channel t 2 .

[0019] when t 1 ≥ t 2 When the particles cannot be adsorbed, increase the output voltage of the DC power supply or reduce the spacing y .

[0020] when t 1 < t 2 When the particles are adsorbed.

[0021] Preferably, the time is determined according to the following formula t 1 : , in, m p is the mass of the particle, in kg; y is the distance between the second anode plate and the second cathode plate, in m; F el is the electric field force on the particle, in N, ; U is the voltage of the DC power supply, in V; q p It is the charge carried by the particle, the unit is C.

[0022] The time is determined according to the following formula: t 2 : , in, v 0 is the velocity of the particles arriving at the entrance of the drainage channel, in m / s, ; F nd is the drag force of the airflow on the particles, the unit is N, ; F g is the gravity on the particle, in N, assuming the particle is a perfect sphere. ; m p The mass of the particles , the unit is kg; x It is the total distance from the gas outlet of the semiconductor process equipment to the entrance of the drainage channel, in meters; ρ g is the density of the gas, in kg / m 3 ; is the air flow velocity, in m / s; v g is the average thermal velocity of gas molecules, in m / s; r p is the radius of the particle, in m; ρ p is the density of the particle, in kg / m 3 ; G is the gravitational constant; L It is the distance between the entrance of the drainage channel and the exit of the drainage channel, in meters.

[0023] Compared with the prior art, the particle analysis device and particle collection method for semiconductor process equipment provided by the present invention have the following beneficial effects: The first particle counter is connected to the gas outlet of the semiconductor process equipment, and the first particle counter measures the concentration and particle size of the particles. Then, the gas carrying the particles enters from the first particle counter between the first anode plate and the first cathode plate, and the gas is ionized, so that the surface of the particles in the gas carries an electric charge, and the charged particles enter the particle adsorption component. The second anode plate and the second cathode plate adsorb the charged particles, and collect the positively charged and negatively charged particles respectively, and the proportion of particles with different surface charge properties is counted. The particles collected on the surface of the plate can be taken out after the test for morphological observation and chemical composition analysis. The present invention can analyze the size, concentration, surface charge, chemical composition and other properties of particle pollution in semiconductor process equipment, and provide a theoretical basis for the source analysis of particle pollution in semiconductor process equipment, thereby improving the efficiency of staff in judging the main source of particles. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 It is a schematic diagram of the overall structure of Example 1 of the present invention.

[0025] Figure 2 Schematic diagram of the structure of the plasma chamber of the present invention.

[0026] Figure 3 It is a schematic diagram of the internal structure of the particle adsorption component of the present invention.

[0027] Figure 4 It is a schematic diagram of the external structure of the particle adsorption component of the present invention.

[0028] Figure 5 It is a schematic diagram of the force analysis of particles in the particle adsorption assembly of the present invention.

[0029] Figure 6 This is a schematic diagram of the overall structure of Example 2 of the present invention.

[0030] Figure 7 It is a schematic diagram of the connection between the overall device of the present invention and semiconductor process equipment and an exhaust pump.

[0031] Description of reference numerals: 1. Pneumatic diaphragm valve, 2. First particle counter, 3. Plasma chamber, 301. Shell, 302. First anode plate, 303. First cathode plate, 4. Particle adsorption component, 401. Second anode plate, 402. Second cathode plate, 403. Heat dissipation fins, 5. Second particle counter, 6. Particle absorption component, 601. Bottle body, 7. Vacuum connecting pipe. DETAILED DESCRIPTION

[0032] It should be noted that, in the description of the present invention, the terms "center", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside" and "outside" etc., indicating directions or positional relationships, are based on the directions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore should not be understood as a limitation on the present invention.

[0033] The terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise specified, "plurality" means two or more.

[0034] In addition, it should be noted that the component connection relationships not specifically mentioned in the present invention are all assumed to adopt the existing technology. Since they do not involve the invention point and are widely used in the existing technology, the structural connection relationships are not described in detail.

[0035] The subject of the present invention is a particle analysis device and particle collection method for semiconductor process equipment. Semiconductor chips are not only the heart of traditional consumer electronic products, but also the cornerstone of the development of emerging technologies such as artificial intelligence, autonomous driving, and supercomputers. Semiconductor process equipment refers to various equipment used in the semiconductor manufacturing process, including photolithography machines, ion implantation machines, chemical vapor deposition machines, physical vapor deposition machines, etc. In recent years, the equipment expenditure of the integrated circuit manufacturing industry has continued to increase, and photolithography, plasma etching and thin film deposition equipment account for nearly 80% of the total equipment expenditure. Due to the sharp increase in the demand for computing power in various industries, the transistor density of integrated circuits has continued to increase, and the transistor feature size has been reduced to below 5 nm. The typical integrated circuit manufacturing process includes: thin film deposition, spin coating of photoresist, exposure, development, plasma etching and removal of photoresist. Among them, the accuracy of fine geometric processing technologies such as photolithography, thin film deposition, and plasma etching is crucial to the manufacture of high-performance and high-yield semiconductor chips. In order to improve the quality of semiconductor chips, semiconductor process equipment generally needs to be used in a vacuum environment. Nitrogen is transported in the semiconductor process equipment as a purge gas, and the gas outlet of the semiconductor process equipment is connected to a vacuum pump through a vacuum pipeline.

[0036] However, there are a large number of high-speed moving parts in the vacuum chamber of the extreme ultraviolet lithography machine. After friction and wear of the component materials, particles will peel off from the surface. Plasma etching and thin film deposition equipment use a large amount of halogen gas and its plasma to process wafers. The component materials in the reaction chamber are prone to corrosion, and particles will also be formed after the surface corrosion products peel off. The halogen gas is used as a process gas during the processing, and nitrogen is used as a purge gas before and after processing. Once the various particles in the drainage channels of these semiconductor process equipment are adsorbed to the surface of the wafer, they will cause local circuit short circuits or open circuits, reducing the chip yield. At present, after discovering that the chip yield has decreased, the staff relies on their experience to judge the main source of particles in the production process.

[0037] Since existing devices are not convenient for collecting particles and it is difficult to analyze the properties of particles, the process of judging the main source of particles lacks a theoretical basis. In addition, there are hundreds of chip production processes, so it is inefficient to judge the main source of particles based solely on the experience of staff.

[0038] Based on the above reasons, the present invention provides a particle analysis device and a particle collection method for semiconductor process equipment to solve the above-mentioned technical problems. Figures 1 to 7 The present invention is described in detail with reference to the structural schematic diagram of FIG.

[0039] Example 1 A particle analysis device for semiconductor process equipment includes a first particle counter 2, a plasma chamber 3, and a particle adsorption component 4.

[0040] The inlet of the first particle counter 2 is used to connect to the gas outlet of the semiconductor process equipment, and the first particle counter 2 is used to measure the particle concentration and particle size in the gas. The plasma chamber 3 includes a shell 301, a first anode plate 302, and a first cathode plate 303. The first anode plate 302 and the first cathode plate 303 are relatively arranged inside the shell 301, and there is a gap between the first anode plate 302 and the first cathode plate 303. The shell 301 has an air inlet and an exhaust port. The air inlet is connected to the outlet of the first particle counter 2. The gas and particles enter between the first anode plate 302 and the first cathode plate 303, and the gas is ionized, so that the particle surface carries an electric charge. The particle adsorption component 4 includes a second anode plate 401, a second cathode plate 402, and an insulating member. The second anode plate 401 and the second cathode plate 402 are arranged opposite to each other with a distance therebetween. The insulating member is arranged between the second anode plate 401 and the second cathode plate 402. One side of the insulating member is connected to the second anode plate 401, and the other side is connected to the second cathode plate 402. A drainage channel is formed between the second anode plate 401 and the second cathode plate 402. The inlet of the drainage channel is connected to the exhaust port, and the outlet of the drainage channel is used to connect to an exhaust pump. The second anode plate 401 and the second cathode plate 402 are used to adsorb particles carrying a charge.

[0041] The first anode plate 302 is grounded, the first cathode plate 303 is electrically connected to the RF power supply, and the first particle counter 2 is connected through the gas outlet of the vacuum tube semiconductor process equipment. Specifically, the vacuum tube can be connected to the photolithography machine, plasma etcher and thin film deposition equipment through the standard vacuum KF40 interface, which is convenient for installation and disassembly. After turning on the RF power supply, the particles in the chambers of equipment such as chemical vapor deposition and molecular beam epitaxy are purged into the first particle counter 2 by nitrogen to measure the particle concentration and particle size. After the uncharged particles continue to be purged into the plasma chamber 3, the nitrogen is ionized, so that the surface of the particles carries a charge, ensuring that such particles can be effectively collected by the particle adsorption component 4, which is convenient for counting the proportion of particles with different surface charge properties. When the semiconductor process equipment connected to the device is a plasma etching device or a plasma enhanced thin film deposition device, the released particles are all charged, and the power supply of the plasma chamber 3 can be turned off.

[0042] A fluororubber pad is provided between the second anode plate 401 and the second cathode plate 402 to insulate the two.

[0043] The second anode plate 401 is grounded, the second cathode plate 402 is electrically connected to a DC power source, and heat dissipation fins 403 are provided on both upper and lower sides of the second anode plate 401 for dissipating heat from the second anode plate 401 .

[0044] After turning on the DC power supply, the particles are blown into the particle adsorption component 4 by nitrogen. The second anode plate 401 and the second cathode plate 402 adsorb negatively charged and positively charged particles respectively, and the proportion of particles with different surface charge properties is counted. The particles collected on the surface of the plates can be taken out after the experiment, and can be used for experimental characterization such as scanning electron microscopy observation of morphology and X-ray diffraction analysis of the phase composition of the particles.

[0045] In order to increase the movement time of particles between the plates and make the particles easily captured by the electrode plates, multiple drainage channels are provided, and the multiple drainage channels are arranged in parallel. One end of the drainage channel is connected to the exhaust port, and the other end of the drainage channel is connected to the vacuum pump.

[0046] In order to further improve the efficiency of particle adsorption, the drainage channel includes a plurality of curved segments, the plurality of curved segments are connected end to end in sequence, and the bending directions of two adjacent curved segments are opposite.

[0047] In this embodiment, the first particle counter 2 is a light scattering nuclear particle counter, the inlet of the light scattering nuclear particle counter is connected to the gas outlet of the semiconductor process equipment, and the outlet of the light scattering nuclear particle counter is connected to the gas inlet of the housing 301. After passing through the light scattering nuclear particle counter, the particles can be discharged from the outlet of the light scattering nuclear particle counter along with the gas.

[0048] The light scattering nuclear particle counter can measure the particle contamination concentration and particle size of the gas passing through the vacuum tube, and its minimum particle size limit is 50 nm.

[0049] In this embodiment, a pneumatic diaphragm valve 1 is provided at the inlet of the first particle counter 2 , the inlet of the pneumatic diaphragm valve 1 is connected to the air outlet of the semiconductor process equipment, and the outlet of the pneumatic diaphragm valve 1 is connected to the inlet of the first particle counter 2 .

[0050] Advantages of pneumatic diaphragm valve: 1. Pneumatic diaphragm valve does not contain traditional valve stem packing sealing structure, and impurities will not be mixed into the vacuum connecting pipe due to packing leakage, affecting the measurement results. 2. The operating mechanism of the pneumatic diaphragm valve is completely isolated from the medium drainage channel, and the mechanical parts in the valve will not contact the medium. If there is residual corrosive gas in the etching drainage channel, it will be blown into the vacuum connecting pipe of the present invention during the test process, and the mechanical parts in the pneumatic diaphragm valve will not contact it, reducing the risk of failure caused by medium corrosion.

[0051] Working principle of this embodiment The particle analysis device for semiconductor process equipment provided in this embodiment is as follows: Figure 7 As shown in the figure, A is a semiconductor process equipment, B is the device, and C is an air pump. Before use, the device is first connected between the semiconductor process equipment and the air pump through a vacuum connecting pipe 7. When in use, Figure 1As shown, the pneumatic diaphragm valve 1 at the entrance of the first particle counter 2 is opened, and the gas in the semiconductor process equipment passes through the first particle counter 2, and the first particle counter 2 measures the concentration and particle size of the particles. Then, the gas carrying the particles is discharged from the outlet of the first particle counter 2 into the plasma chamber 3, and the gas and the particles enter between the first anode plate 302 and the first cathode plate 303. The gas is ionized to make the surface of the particles carry charges. The charged particles enter from the plasma chamber 3 between the second anode plate 401 and the second cathode plate 402 as the gas is blown. The second anode plate 401 and the second cathode plate 402 respectively adsorb the negatively charged and positively charged particles, so that the proportion of particles with different surface charge properties can be counted, and it is convenient to take out the particles collected on the surface of the plates.

[0052] Example 2 On the basis of Example 1, in order to further analyze the particles carried by the exhaust gas in the semiconductor process equipment, a second particle counter 5 and a particle absorption component 6 are also arranged in parallel between the semiconductor process equipment and the vacuum pump in this embodiment. The second particle counter 5 is a condensation nucleus particle counter. The inlet of the condensation nucleus particle counter is connected to the gas outlet of the semiconductor process equipment, and the outlet of the condensation nucleus particle counter is connected to the vacuum pump. The particles in the condensation nucleus particle counter are difficult to remove. The condensation nucleus particle counter can measure the particle pollution concentration passing through the gas, and the minimum size limit of particle identification is 1 nm.

[0053] The particle absorption component 6 has pneumatic diaphragm valves at the air inlet and the air outlet. The particle absorption component 6 includes at least three bottles 601. The bottle 601 is used to hold absorption liquid. The multiple bottles 601 are arranged side by side. The inlet of the rear bottle 601 and the outlet of the front bottle 601 are connected through a connecting pipe. The lower end of the connecting pipe at the inlet of the bottle 601 extends to the absorption liquid in the bottle 601. The outlet of the bottle 601 is set at the top. The inlet of the first bottle 601 is connected to the air outlet of the semiconductor process equipment, and the outlet of the last bottle 601 is connected to the vacuum pump.

[0054] In this embodiment, the number of the bottles 601 is three, and the bottles 601 are respectively provided with neutral, acidic or alkaline absorption liquid.

[0055] Among them, the neutral absorption liquid can be anhydrous ethanol, the acidic absorption liquid can be a dilute sulfuric acid solution, and the alkaline absorption liquid can be a dilute sodium hydroxide solution. All bottles 601 are arranged side by side, and the particles are collected by the absorption liquid in the bottle 601. The changes in the solution composition before and after absorption are subsequently analyzed by inductively coupled plasma mass spectrometry to identify the chemical composition of the particles and analyze the chemical composition of the particles to determine the source of the particles.

[0056] How this implementation works The particle analysis device for semiconductor process equipment provided in this embodiment, when in use, opens the pneumatic diaphragm valves respectively connected to the inlet and outlet of the second particle counter 5, so that the particles follow the gas into the second particle counter 5, and then the gas is discharged through the vacuum connection pipe 7, and the second particle counter 5 counts the concentration and particle size of the particle pollution in the gas. Open the pneumatic diaphragm valves respectively connected to the inlet and outlet of the particle absorption component 6, so that the particles follow the gas into the bottle 601, and the particles carried in the gas are dissolved in the absorption liquid, and then the chemical composition of the particles is analyzed by inductively coupled plasma mass spectrometry. The first particle counter 2, the plasma chamber 3, the particle adsorption component 4, the second particle counter 5, and the particle absorption component 6 can all operate simultaneously.

[0057] Example 3 In order to obtain a better particle collection effect, this embodiment provides a particle collection method for semiconductor process equipment, the method comprising the following steps: The distance between the second anode plate 401 and the second cathode plate 402 is set to y .

[0058] The second anode plate 401 is grounded, and the second cathode plate 402 is connected to a DC power supply.

[0059] The time required for particles to move from the second anode plate 401 to the second cathode plate 402 or from the second cathode plate 402 to the second anode plate 401 is determined according to the following formula: t 1 : , in, m p is the mass of the particle, in kg; y is the distance between the second anode plate 401 and the second cathode plate 402, in m; F el is the electric field force on the particle, in N, ; U is the voltage of the DC power supply, in V; q p It is the charge carried by the particle, the unit is C.

[0060] The time required for the particles to move from the inlet of the drainage channel to the outlet of the drainage channel is determined according to the following formula: t 2 : , in, v 0 is the velocity of the particles arriving at the entrance of the drainage channel, in m / s, ; Fnd is the drag force of the airflow on the particles, the unit is N, ; F g is the gravity on the particle, in N, assuming the particle is a perfect sphere. ; m p The mass of the particles , the unit is kg; x It is the total distance from the gas outlet of the semiconductor process equipment to the entrance of the drainage channel, in meters; ρ g is the density of the gas, in kg / m 3 ; is the air flow velocity, in m / s; v g is the average thermal velocity of gas molecules, in m / s; r p is the radius of the particle, in m. After the first particle counter 2 measures the particle size, the maximum particle size is taken as the particle radius. r p ; ρ p is the density of the particle, in kg / m 3 ; G is the gravitational constant; L It is the distance between the entrance of the drainage channel and the exit of the drainage channel, in meters.

[0061] when t 1 ≥ t 2 When the particles cannot be adsorbed, increase the output voltage of the DC power supply or reduce the spacing y .

[0062] when t 1 < t 2 When the particles are adsorbed.

[0063] In addition, the upper limit of the DC power supply output voltage varies depending on the material of the electrode plates and the distance between the electrode plates. The gas between the second anode plate 401 and the second cathode plate 402 should be prevented from being broken down and ionized. When the gas between the electrode plates is broken down to form a plasma gas mass, the electric field strength inside the plasma gas mass is lower than that of the unionized gas. After the particles enter the plasma gas mass, the electric field force they are subjected to is small, and the speed of vertical plate movement is reduced, which is not conducive to particle adsorption.

[0064] The device of the present invention is connected between the exhaust port and the vacuum pump of the semiconductor process equipment, and can effectively intercept the particles in the exhaust gas in the experimental chamber of the semiconductor process equipment, prevent hard and brittle particles from entering the vortex pump and the molecular pump and damaging the drainage channel and the blades, and effectively improve the service life of the vacuum pumps such as the vortex pump and the molecular pump.

[0065] It should be noted that, since the present invention is a device for testing the particle release rate, particle size distribution, chemical composition and surface charge properties during material corrosion in a high-temperature gas environment, in the present invention, the vacuum connecting pipeline is made of 316lvv stainless steel or nickel-based alloy and is electropolished. The inlet pipe and outlet pipe of the particle absorption component are made of polytetrafluoroethylene to avoid the influence of pipeline surface adsorption on the test results as much as possible.

[0066] It should be noted that when the present invention involves a numerical range, it should be understood that the two endpoints of each numerical range and any value between the two endpoints can be selected. Since the steps and methods used are the same as those in the embodiments, in order to avoid redundancy, the present invention describes a preferred embodiment. Although the preferred embodiments of the present invention have been described, those skilled in the art may make additional changes and modifications to these embodiments once they know the basic creative concept. Therefore, the attached claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the present invention.

[0067] Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.

[0068] The above disclosure is only a preferred specific embodiment of the present invention, but the embodiments of the present invention are not limited thereto, and any changes that can be conceived by those skilled in the art should fall within the protection scope of the present invention.

Claims

1. A particle analysis device for semiconductor process equipment, characterized in that: include: A first particle counter (2), the inlet of which is used to connect to the gas outlet of semiconductor process equipment, and the first particle counter (2) is used to measure the particle concentration and particle size in the gas; A plasma chamber (3) comprises a shell (301), a first anode plate (302), and a first cathode plate (303); the first anode plate (302) and the first cathode plate (303) are arranged relative to each other inside the shell (301); a distance is provided between the first anode plate (302) and the first cathode plate (303); the shell (301) has an air inlet and an air outlet; the air inlet is connected to an outlet of a first particle counter (2); gas and particles enter between the first anode plate (302) and the first cathode plate (303), the gas is ionized, and the particle surfaces carry electric charges; The particle adsorption component (4) comprises a second anode plate (401), a second cathode plate (402), and an insulating member, wherein the second anode plate (401) and the second cathode plate (402) are arranged opposite to each other with a distance therebetween, one side of the insulating member is connected to the second anode plate (401), and the other side is connected to the second cathode plate (402), a drainage channel is formed between the second anode plate (401) and the second cathode plate (402), an inlet of the drainage channel is connected to the exhaust port, and an outlet of the drainage channel is used to connect to an exhaust pump, and the second anode plate (401) and the second cathode plate (402) are used to adsorb particles carrying a charge.

2. The particle analysis device for semiconductor process equipment according to claim 1, characterized in that: There are multiple drainage channels, which are arranged in parallel. One end of each drainage channel is connected to the exhaust port, and the other end of each drainage channel is connected to an air pump.

3. The particle analysis device for semiconductor process equipment according to claim 2, characterized in that: The drainage channel includes a plurality of curved segments, the plurality of curved segments are connected end to end in sequence, and the bending directions of two adjacent curved segments are opposite.

4. The particle analysis device for semiconductor process equipment according to claim 1, characterized in that: The first particle counter (2) is a light scattering nuclear particle counter.

5. The particle analysis device for semiconductor process equipment according to claim 1, characterized in that: A pneumatic diaphragm valve (1) is provided at the inlet of the first particle counter (2), and the first particle counter (2) is connected to the gas outlet of the semiconductor process equipment via the pneumatic diaphragm valve (1).

6. The particle analysis device for semiconductor process equipment according to claim 1, characterized in that: It also includes a second particle counter (5), which is a condensation nucleus particle counter, the inlet of the condensation nucleus particle counter is connected to the air outlet of the semiconductor process equipment, and the outlet of the condensation nucleus particle counter is connected to the air pump.

7. The particle analysis device for semiconductor process equipment according to claim 1, characterized in that: It also includes a particle absorption component (6), which includes at least three bottles (601), wherein the bottles (601) are used to contain absorption liquid, and the multiple bottles (601) are arranged side by side, and the inlet of the rear bottle (601) and the outlet of the front bottle (601) are connected through a connecting pipe, and the lower end of the connecting pipe at the inlet of the bottle (601) extends into the absorption liquid in the bottle (601), and the outlet of the bottle (601) is arranged at the top of the bottle (601), and the inlet of the first bottle (601) is used to connect to the air outlet of the semiconductor process equipment, and the outlet of the last bottle (601) is used to connect to the vacuum pump.

8. A particle collection method for semiconductor process equipment, using the particle analysis device for semiconductor process equipment according to any one of claims 1 to 7, characterized in that: The method comprises the following steps: The distance between the second anode plate (401) and the second cathode plate (402) is set to y ; The second anode plate (401) is grounded, and the second cathode plate (402) is connected to a direct current power supply; Determine the time required for particles to move from the second anode plate (401) to the second cathode plate (402) or from the second cathode plate (402) to the second anode plate (401) t 1 ; Determine the time required for a particle to move from the inlet of the drainage channel to the outlet of the drainage channel t 2 ; when t 1 ≥ t 2 When the particles cannot be adsorbed, increase the output voltage of the DC power supply or reduce the spacing y ; when t 1 < t 2 When the particles are adsorbed.

9. The particle collection method for semiconductor process equipment according to claim 8, characterized in that: Determine the time according to the following formula t 1 ： ， in, m p is the mass of the particle, in kg; y is the distance between the second anode plate (401) and the second cathode plate (402), in meters; F el is the electric field force on the particle, in N, ; U is the voltage of the DC power supply, in V; q p It is the charge carried by the particle, the unit is C.

10. The particle collection method for semiconductor process equipment according to claim 8, wherein: Determine the time according to the following formula t 2 : ， in, v 0 is the velocity of the particles arriving at the entrance of the drainage channel, in m / s, ; F nd is the drag force of the airflow on the particles, the unit is N, ; F g is the gravity on the particle, in N, assuming the particle is a perfect sphere. ; m p The mass of the particles , the unit is kg; x It is the total distance from the gas outlet of the semiconductor process equipment to the entrance of the drainage channel, in meters; ρ g is the density of the gas, in kg / m 3 ; is the air flow velocity in m / s; v g is the average thermal velocity of gas molecules, in m / s; r p is the radius of the particle, in m; ρ p is the density of the particle, in kg / m 3 ; G is the gravitational constant; L It is the distance between the entrance of the drainage channel and the exit of the drainage channel, in meters.

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