A spin nanostructured intrinsic gas sensor based on g-C4N3 monolayer
By constructing a spin nano-inherent gas-sensitive device on a single-layer material of g-C4N3, high sensitivity detection and spin separation of NO and NO2 gases are achieved by changing the magnetic field direction, the problem of difficulty in detecting and separating nitrogen oxide gases in the prior art is solved, and efficient and sensitive gas detection effect is achieved.
Patent Information
- Application Number
- CN202411840820.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-13
- Publication Date
- 2025-04-04
AI Technical Summary
The prior art is difficult to effectively detect and separate nitrogen oxide (NO2 and NO) gases, and lacks nano-scale gas-sensitive devices with high sensitivity.
Using a spin nano-intrinsic gas-sensitive device based on g-C4N3 monolayer, a parallel state configuration and an anti-parallel state configuration are constructed by applying source electrodes and drain electrodes at both ends of g-C4N3 monolayer material and applying magnetic fields in the same or opposite directions on the electrodes, thereby achieving high sensitivity detection and spin separation of NO and NO2.
It realizes 100% sensitivity detection for NO and NO2 gases, and detects different target gases by changing the direction of the magnetic field. It has the advantages of light structure, stable and environmentally friendly materials, and high response signals.
Smart Images
Figure CN119757512A_ABST
Abstract
Description
Technical Field
[0001] The invention belongs to the technical field of construction of nanoscale electronic devices, and in particular relates to a spin nano intrinsic gas sensing device based on a g-C4N3 monolayer. Background Art
[0002] In 2010, Dai et al. successfully synthesized a new type of graphite-like carbon nitride (g-C4N3) by cross-linking nitrile-containing anions in ionic liquids.
[0003] Hashmi et al. found that when g-C4N3 is doped with one lithium atom, the ferromagnetic and non-magnetic states of the system are almost degraded. However, as the lithium concentration increases, the system undergoes a transition from a semi-metallic state to a semiconductor. Liu et al. found that the asymmetric deformation of g-C4N3 caused by uniaxial strain not only regulates the magnetic properties, but also leads to a transition from semi-metallicity to metallicity. Wu et al. found that when the biaxial compressive strain is lower than -2%, g-C4N3 maintains ferromagnetic semi-metallicity, but the semi-metallic gap is reduced. When the compressive strain ranges from -5 to -3%, g-C4N3 becomes a non-magnetic metal, and when the strain at the end is increased, it becomes a non-magnetic semiconductor. Due to the covalent bond formed between CC and CN in the g-C4N3 monolayer, the two-dimensional carbon-nitrogen nanomaterial exhibits a strong and stable atomic configuration. And the large number of holes formed by the unique three-nitrogen coordinates of the g-C4N3 material provide good sites for adsorption. Summary of the invention
[0004] The purpose of the present invention is to provide a spin nanometer intrinsic gas sensor based on a g-C4N3 monolayer, which has good spin sensitivity to nitrogen oxides.
[0005] To achieve the above-mentioned purpose, the present invention provides the following scheme: a spin nano-intrinsic gas sensor based on g-C4N3 monolayer, wherein the gas sensor comprises a g-C4N3 monolayer material, wherein the g-C4N3 monolayer material is arranged on a substrate, and the electrode structure at both ends of the g-C4N3 monolayer material is the same as the intrinsic structure of the middle scattering region, and a spin gas sensor is obtained by respectively applying a source electrode and a drain electrode at both ends of the g-C4N3 monolayer material to construct a parallel configuration and an anti-parallel configuration, and the spin gas sensor is used to detect non-salting oxides.
[0006] In the spin nanometer intrinsic gas sensor device based on g-C4N3 monolayer of the present invention, the non-salt-forming oxide is nitrogen oxide.
[0007] In the spin nanometer intrinsic gas sensing device based on g-C4N3 monolayer of the present invention, the nitrogen oxide includes one or both of NO2 and NO.
[0008] According to the spin nanometer intrinsic gas sensor based on g-C4N3 monolayer of the present invention, when a source electrode and a drain electrode are respectively applied to both ends of the g-C4N3 monolayer material, magnetic fields in the same or opposite directions are simultaneously applied to obtain parallel state configuration and anti-parallel state configuration.
[0009] A spin nano-intrinsic gas sensor based on a g-C4N3 monolayer according to the present invention has a sensitivity of 100% to NO2 and NO when NO2 and NO are detected by the spin gas sensor and can realize spin separation of NO2 and NO. In a parallel configuration, the spin-up low-current gas sensor in the horizontal direction shows sensitive characteristics to NO. In an anti-parallel configuration, the spin-down high-current gas sensor in the horizontal direction shows sensitive characteristics to NO2.
[0010] According to the invention, a spin nanometer intrinsic gas sensor based on a g-C4N3 monolayer is provided, wherein the substrate is SiO2.
[0011] Compared with the prior art, the present invention has the following advantages and technical effects:
[0012] The spin nano-intrinsic gas sensor of the present invention has the advantages of light and thin structure, stable and environmentally friendly materials, high response signal, detection of different target gases by changing the direction of the magnetic field, and high sensitivity response to NO and NO2 gases. It can be used to construct nano-scale gas sensors for nitrogen oxide detection. BRIEF DESCRIPTION OF THE DRAWINGS
[0013] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required to be used in the embodiments are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative work:
[0014] Figure 1 is an atomic scale schematic diagram of the present invention;
[0015] Figure 2 It is the sensitivity of the present invention to NO in the parallel state configuration and to NO2 in the antiparallel state configuration.
[0016] Among them, P is the parallel state configuration and AP is the antiparallel state configuration. DETAILED DESCRIPTION
[0017] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.
[0018] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.
[0019] Reference Figure 1 to Figure 2 As shown, the present invention provides a spin nano-intrinsic gas sensor based on a g-C4N3 monolayer, the gas sensor comprising a g-C4N3 monolayer material, the g-C4N3 monolayer material being arranged on a substrate, the electrode structure at both ends of the g-C4N3 monolayer material being the same as the intrinsic structure of the middle scattering region, a spin gas sensor is obtained by respectively applying a source electrode and a drain electrode at both ends of the g-C4N3 monolayer material to construct a parallel configuration and an anti-parallel configuration, and the non-salting oxide is detected by the spin gas sensor.
[0020] g-C4N3 has a unique intrinsic half-metallic property, which is unique compared to other 2D materials. As a half-metal, g-C4N3 conducts electrons in one spin direction but insulates electrons in the other spin direction. This is very promising for logic and spintronic devices. In particular, g-C4N3 can produce 100% perfect spin-polarized electronic states at the Fermi level and maintain stable structural and magnetic properties at 500K.
[0021] Furthermore, the non-salt-forming oxide is nitrogen oxide.
[0022] Furthermore, the nitrogen oxides include one or both of NO2 and NO.
[0023] Furthermore, when a source electrode and a drain electrode are applied to both ends of the g-C4N3 monolayer material respectively, a magnetic field in the same or opposite direction is applied at the same time to obtain a parallel state configuration and an anti-parallel state configuration.
[0024] Furthermore, when NO2 and NO are detected by spin gas sensors, the sensitivity to NO2 and NO is 100% and NO2 and NO can be spin separated. In the parallel state configuration, the low-current gas sensor with spin upward in the horizontal direction is sensitive to NO, and in the anti-parallel state configuration, the high-current gas sensor with spin downward in the horizontal direction is sensitive to NO2.
[0025] Furthermore, the substrate is SiO2.
[0026] The present invention constructs a spin nanometer intrinsic gas sensor composed of a g-C4N3 monolayer by using a device model design tool. The transport of the g-C4N3 monolayer spin nanometer intrinsic gas sensor is systematically studied by using density functional theory combined with a non-equilibrium Green's function method, and the gas sensing performance test is completed.
[0027] By measuring the current-voltage curve before and after the device adsorbs gas molecules, the gas-sensing performance of the nano-intrinsic gas sensor based on the g-C4N3 monolayer to nitrogen oxides is reflected, which provides the theoretical basis and construction method for further designing and realizing spin gas sensors with thin and light structure, stable and environmentally friendly materials, stable response signals, and the detection of different target gases and high-sensitivity response to NO and NO2 gases by changing the direction of the magnetic field.
[0028] The high sensitivity of the present invention to NO and NO2 gases can be achieved according to the following steps:
[0029] The g-C4N3 material monolayer structure is placed on a silicon dioxide substrate, a drain electrode and a source electrode are applied to both ends of the device, and a magnetic field in the same or opposite direction is applied to the electrodes to obtain a parallel state configuration and an anti-parallel state configuration. Thus, a spin separation transport nano-intrinsic gas sensor device under different spin configurations is constructed.
[0030] The present invention is used to detect the gas sensitivity to nitrogen oxides. A bias voltage is applied to both ends of the electrode, and a corresponding response current is generated for the corresponding gas, wherein the current is determined by the following formula:
[0031]
[0032] T ↑(↓) (E,V) represents the probability of a spin electron transferring from the left electrode (L) to the right electrode (R) under the influence of the bias voltage V and the electron energy E. L(R) (E-μ L(R) ) represents the Fermi-Dirac distribution of the L and R regions. Under the applied bias voltage, the chemical potentials of the left and right electrodes are μ L =E F +V / 2 and μ R =E F +V / 2.
[0033] In order to evaluate the sensing performance of the gas sensor, the response current is standardized and the sensitivity of the gas sensor to each gas can be defined as S:
[0034]
[0035] and I ↑(↓)They are the response currents of the intrinsic gas sensor before and after gas adsorption.
[0036] It can be seen that the gas sensors in the parallel and antiparallel configurations show different response signals to nitrogen oxides. In the parallel configuration, the low current along the horizontal direction with spin up shows excellent sensitivity to NO. In the antiparallel configuration, the high current device along the horizontal direction with spin down shows even better sensitivity to NO2. In both the parallel and antiparallel configurations, the device's sensitivity to NO and NO2 gases reaches 100%, which is better than the sensitivity of other two-dimensional materials to NO and NO2 gas detection.
[0037] The gas sensor device of the present invention has the advantages of light and thin structure, stable and environmentally friendly materials, and stable response signals. It can detect different target gases and respond to NO and NO2 gases with high sensitivity by changing the direction of the magnetic field. A compact and miniature gas sensor device can be manufactured according to actual needs, and the detection of NO and NO2 gases can be met by changing the direction of the applied magnetic field.
[0038] In the description of the present invention, it should be understood that the terms "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside" and "outside" etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.
[0039] The embodiments described above are only descriptions of the preferred embodiments of the present invention, and are not intended to limit the scope of the present invention. Without departing from the design spirit of the present invention, various modifications and improvements made to the technical solutions of the present invention by ordinary technicians in this field should fall within the protection scope of the present invention.
Claims
1. A spin nanometer intrinsic gas sensor based on g-C4N3 monolayer, characterized in that: The gas sensor comprises a g-C4N3 single-layer material, wherein the g-C4N3 single-layer material is arranged on a substrate, and the electrode structure at both ends of the g-C4N3 single-layer material is the same as the intrinsic structure of the middle scattering region. A spin gas sensor is obtained by respectively applying a source electrode and a drain electrode at both ends of the g-C4N3 single-layer material to construct a parallel configuration and an anti-parallel configuration, and the spin gas sensor is used to detect non-salting oxides.
2. The spin nanometer intrinsic gas sensor based on g-C4N3 monolayer according to claim 1, characterized in that: The non-salt-forming oxide is nitrogen oxide.
3. The spin nanometer intrinsic gas sensor based on g-C4N3 monolayer according to claim 2, characterized in that: The nitrogen oxides include one or both of NO2 and NO.
4. The spin nanometer intrinsic gas sensor based on g-C4N3 monolayer according to claim 1, characterized in that: When a source electrode and a drain electrode are applied to both ends of the g-C4N3 monolayer material respectively, a magnetic field in the same or opposite direction is applied simultaneously to obtain a parallel state configuration and an anti-parallel state configuration.
5. The spin nanometer intrinsic gas sensor based on g-C4N3 monolayer according to claim 3, characterized in that: When NO2 and NO are detected by the spin gas sensor, the sensitivity to NO2 and NO is 100% and NO2 and NO can be spin separated. In the parallel configuration, the low-current gas sensor with spin upward in the horizontal direction shows sensitive characteristics to NO. In the anti-parallel configuration, the high-current gas sensor with spin downward in the horizontal direction shows sensitive characteristics to NO2.
6. The spin nanometer intrinsic gas sensor based on g-C4N3 monolayer according to claim 1, characterized in that: The substrate is SiO2.