A blackened metal conductive film with high weather resistance

By using Cu/Ni/Ti/Cr alloy nitrogen oxide as the surface and bottom blackening layer in the metal grid conductive film, and combining the silicon oxide buffer transition layer, the problem of color change in the conductive film in the prior art under the humid and heat environment is solved, and high weather resistance, low surface reflectivity and good conductivity are achieved.

CN119763902APending Publication Date: 2025-04-04ANYANG SONGYANGGUANG ELECTRONIC MATERIALS CO LTD
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Patent Information

Application Number
CN202510064112.1
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-01-15
Publication Date
2025-04-04

AI Technical Summary

Technical Problem

The existing metal grid conductive films are prone to color changes in humid and heat environments, resulting in blackening failure, and the surface silicon protective layer has a negative impact on the conductivity and etching process.

Method used

Cu/Ni/Ti/Cr alloy nitrogen oxide is used as the surface and bottom blackening layer, and combined with the silicon oxide buffer transition layer, a high weather resistance blackening metal conductive film is formed to maintain good conductivity and downstream etching performance.

Benefits of technology

The blackening effect is achieved that maintains a stable blackening effect in a humid and hot environment, and the surface reflectivity is reduced without affecting the conductivity and the performance of the downstream etching process.

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Abstract

The present invention provides a highly weather-resistant blackened metal conductive film, which belongs to the technical field of conductive films and comprises a surface blackened layer, a metal conductive layer, a bottom blackened layer, a buffer transition layer, a substrate coating layer and a flexible substrate layer. The present invention provides a highly weather-resistant blackened metal conductive film, which can simultaneously maintain good conductivity and downstream etching performance.
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Description

Technical Field

[0001] The invention relates to the technical field of conductive films, and in particular to a blackened metal conductive film with high weather resistance. Background Art

[0002] Metal Mesh conductive film is made by combining conductive metal materials with transparent substrate materials. It has high light transmittance and excellent conductive properties. It has broad application prospects in touch screens, photovoltaic power generation, displays and other fields. Compared with traditional ITO conductive film, Metal Mesh has better conductivity, optical properties and flexibility, providing important support for the development of optoelectronics.

[0003] The metal grid structure is a key component in modern touch technology. It is a fine grid formed by a specific process using metal materials. It is mainly responsible for sensing user touch operations to achieve precise position detection and touch functions on the touch screen. The metal grid is usually composed of metal wires and gaps. The metal wires serve as conductive paths, while the gaps act as insulating areas. The metal grid structure is suitable for touch technology because it can produce fine line widths with high precision, reduce interference between wires and improve resolution. The metal grid has good chemical and thermal stability and can withstand various tests in the production process and use environment. However, when the metal grid conductive film is used in the touch display field, in order to ensure the display effect and reduce the visibility of the metal mesh grid lines, it is usually necessary to blacken the surface of the metal conductive film to reduce its surface reflection of visible light.

[0004] The technology of blackening the metal film surface is generally to oxidize the metal surface. For example, the utility model patent with the publication number CN217690518U and the name of a double-sided blackened copper conductive film discloses sputtering copper oxide on the surface of metal copper. However, in actual use, it is found that the copper oxide is very easy to change color in a hot and humid environment, which leads to blackening failure. Therefore, a blackening or surface protection process with better weather resistance is needed. For example, the patent with the publication number CN117476272A and the name of a copper film composite material, electronic device and equipment with double-sided copper plating discloses preparing a silicon coating on the surface of oxynitride copper to obtain better environmental stability. However, the surface silicon protection layer of the above technical solution will have a negative impact on the surface conductivity of the film layer and the downstream etching process. Summary of the invention

[0005] In view of this, the present invention provides a blackened metal conductive film with high weather resistance, which can simultaneously maintain good conductivity and downstream etching performance.

[0006] To achieve the above objectives, the present invention provides a highly weather-resistant blackened metal conductive film, comprising a surface blackened layer, a metal conductive layer, a bottom blackened layer, a buffer transition layer, a substrate coating layer and a flexible substrate layer.

[0007] Optionally, the conductive film includes, from top to bottom, a surface blackened layer, a metal conductive layer, a bottom blackened layer, a buffer transition layer, a substrate coating layer and a flexible substrate layer.

[0008] Optionally, the conductive film has a flexible substrate layer as the central layer, and the upper layer and the lower layer of the flexible substrate layer are symmetrical, and from the outside to the inside are the surface blackened layer, the metal conductive layer, the bottom blackened layer, the buffer transition layer, and the substrate coating layer.

[0009] Optionally, the material of the surface blackened layer is Cu / Ni / Ti / Cr alloy oxynitride, and the thickness of the surface blackened layer is 5-10 nm.

[0010] Optionally, the material of the metal conductive layer is any one of Cu, Ni, Ag, and Al, and the thickness of the metal conductive layer is 100-1000 nm.

[0011] Optionally, the material of the bottom black layer is Cu / Ni / Ti / Cr alloy oxynitride, and the thickness of the bottom black layer is 5-10 nm.

[0012] Optionally, the material of the buffer transition layer is silicon dioxide, and the thickness is 5-20 nm.

[0013] Optionally, the substrate coating layer has a thickness of 0.5-2.5 μm.

[0014] Optionally, the material of the flexible substrate layer includes PET / TAC / PMMA / CPI.

[0015] The above technical solution of the present invention includes at least the following beneficial effects: The metal conductive film provided by the present invention achieves high weather resistance, low surface reflectivity, and good conductivity by combining silicon oxide, conductive metal and alloy nitride oxide. The alloy nitride oxide serves as a surface blackening layer, which reduces the reflectivity of the metal surface on the one hand and has good effects on the downstream etching process on the other hand. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 The film structure of the blackened metal conductive film in Example 1 of the present invention; Figure 2 This is the film structure of the blackened metal conductive film in Example 4 of the present invention.

[0017] In the figure: 1 is a flexible substrate layer; 2 is a substrate coating layer; 3 is a buffer transition layer; 4 is a bottom black layer; 5 is a metal conductive layer; and 6 is a surface black layer. DETAILED DESCRIPTION

[0018] To make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the following will be combined with the appended drawings of the embodiments of the present invention. Figure 1~2 , the technical scheme of the embodiment of the present invention is clearly and completely described. Obviously, the described embodiment is a part of the embodiment of the present invention, not all of the embodiments. Based on the described embodiment of the present invention, all other embodiments obtained by ordinary technicians in this field belong to the scope of protection of the present invention.

[0019] Example 1 The highly weather-resistant blackened metal conductive film provided in the present embodiment includes a surface blackened layer, a metal conductive layer, a bottom blackened layer, a buffer transition layer, a substrate coating layer and a flexible substrate layer. The structure of the conductive film is a flexible substrate layer as a central layer, and the upper and lower layers of the flexible substrate layer are symmetrical, and from the outside to the inside are the surface blackened layer, the metal conductive layer, the bottom blackened layer, the buffer transition layer, and the substrate coating layer. The detailed structure is, from top to bottom, the surface blackened layer, the metal conductive layer, the bottom blackened layer, the buffer transition layer, the substrate coating layer, the flexible substrate layer, the substrate coating layer, the buffer transition layer, the bottom blackened layer, the metal conductive layer, and the surface blackened layer. The material of the surface blackened layer is Cu / Ni / Ti / Cr alloy oxynitride, and the thickness of the surface blackened layer is 10nm; the material of the metal conductive layer is Al, and the thickness of the metal conductive layer is 1000nm; the material of the bottom blackened layer is Cu / Ni / Ti / Cr alloy oxynitride, and the thickness of the bottom blackened layer is 5nm; the material of the buffer transition layer is silicon dioxide, and the thickness is 5nm; the thickness of the substrate coating layer is 0.5μm; the materials of the flexible substrate layer include PET / TAC / PMMA / CPI.

[0020] Example 2 The highly weather-resistant blackened metal conductive film provided in the present embodiment includes a surface blackened layer, a metal conductive layer, a bottom blackened layer, a buffer transition layer, a substrate coating layer and a flexible substrate layer. The structure of the conductive film is a flexible substrate layer as a central layer, and the upper and lower layers of the flexible substrate layer are symmetrical, and from the outside to the inside are the surface blackened layer, the metal conductive layer, the bottom blackened layer, the buffer transition layer, and the substrate coating layer. The detailed structure is, from top to bottom, the surface blackened layer, the metal conductive layer, the bottom blackened layer, the buffer transition layer, the substrate coating layer, the flexible substrate layer, the substrate coating layer, the buffer transition layer, the bottom blackened layer, the metal conductive layer, and the surface blackened layer. The material of the surface blackened layer is Cu / Ni / Ti / Cr alloy oxynitride, and the thickness of the surface blackened layer is 8nm; the material of the metal conductive layer is Ag, and the thickness of the metal conductive layer is 500nm; the material of the bottom blackened layer is Cu / Ni / Ti / Cr alloy oxynitride, and the thickness of the bottom blackened layer is 6nm; the material of the buffer transition layer is silicon dioxide, and the thickness is 20nm; the thickness of the substrate coating layer is 0.2μm; the materials of the flexible substrate layer include PET / TAC / PMMA / CPI.

[0021] Example 3 The highly weather-resistant blackened metal conductive film provided in the present embodiment includes a surface blackened layer, a metal conductive layer, a bottom blackened layer, a buffer transition layer, a substrate coating layer and a flexible substrate layer. The structure of the conductive film is a flexible substrate layer as a central layer, and the upper and lower layers of the flexible substrate layer are symmetrical, and from the outside to the inside are the surface blackened layer, the metal conductive layer, the bottom blackened layer, the buffer transition layer, and the substrate coating layer. The detailed structure is, from top to bottom, the surface blackened layer, the metal conductive layer, the bottom blackened layer, the buffer transition layer, the substrate coating layer, the flexible substrate layer, the substrate coating layer, the buffer transition layer, the bottom blackened layer, the metal conductive layer, and the surface blackened layer. The material of the surface blackened layer is Cu / Ni / Ti / Cr alloy oxynitride, and the thickness of the surface blackened layer is 6nm; the material of the metal conductive layer is Ni, and the thickness of the metal conductive layer is 250nm; the material of the bottom blackened layer is Cu / Ni / Ti / Cr alloy oxynitride, and the thickness of the bottom blackened layer is 8nm; the material of the buffer transition layer is silicon dioxide, and the thickness is 15nm; the thickness of the substrate coating layer is 2.5μm; the materials of the flexible substrate layer include PET / TAC / PMMA / CPI.

[0022] Example 4 The highly weather-resistant blackened metal conductive film provided in the present embodiment includes a surface blackened layer, a metal conductive layer, a bottom blackened layer, a buffer transition layer, a substrate coating layer and a flexible substrate layer. The structure of the conductive film is a flexible substrate layer as a central layer, and the upper and lower layers of the flexible substrate layer are symmetrical, and from the outside to the inside are the surface blackened layer, the metal conductive layer, the bottom blackened layer, the buffer transition layer, and the substrate coating layer. The detailed structure is, from top to bottom, the surface blackened layer, the metal conductive layer, the bottom blackened layer, the buffer transition layer, the substrate coating layer, the flexible substrate layer, the substrate coating layer, the buffer transition layer, the bottom blackened layer, the metal conductive layer, and the surface blackened layer. The material of the surface blackened layer is Cu / Ni / Ti / Cr alloy oxynitride, and the thickness of the surface blackened layer is 6nm; the material of the metal conductive layer is Cu, and the thickness of the metal conductive layer is 200nm; the material of the bottom blackened layer is Cu / Ni / Ti / Cr alloy oxynitride, and the thickness of the bottom blackened layer is 8nm; the material of the buffer transition layer is silicon dioxide, and the thickness is 15nm; the thickness of the substrate coating layer is 0.5μm; the materials of the flexible substrate layer include PET / TAC / PMMA / CPI.

[0023] Example 5 The highly weather-resistant blackened metal conductive film provided in the present embodiment includes a surface blackened layer, a metal conductive layer, a bottom blackened layer, a buffer transition layer, a substrate coating layer and a flexible substrate layer. The structure of the conductive film includes, from top to bottom, a surface blackened layer, a metal conductive layer, a bottom blackened layer, a buffer transition layer, a substrate coating layer and a flexible substrate layer, wherein the material of the surface blackened layer is Cu / Ni / Ti / Cr alloy oxynitride, and the thickness of the surface blackened layer is 5nm; the material of the metal conductive layer is Al, and the thickness of the metal conductive layer is 180nm; the material of the bottom blackened layer is Cu / Ni / Ti / Cr alloy oxynitride, and the thickness of the bottom blackened layer is 5nm; the material of the buffer transition layer is silicon dioxide, and the thickness is 5nm; the thickness of the substrate coating layer is 0.2μm; the material of the flexible substrate layer includes PET / TAC / PMMA / CPI.

[0024] Example 6 The highly weather-resistant blackened metal conductive film provided in the present embodiment includes a surface blackened layer, a metal conductive layer, a bottom blackened layer, a buffer transition layer, a substrate coating layer and a flexible substrate layer. The structure of the conductive film includes, from top to bottom, a surface blackened layer, a metal conductive layer, a bottom blackened layer, a buffer transition layer, a substrate coating layer and a flexible substrate layer, wherein the material of the surface blackened layer is Cu / Ni / Ti / Cr alloy oxynitride, and the thickness of the surface blackened layer is 10nm; the material of the metal conductive layer is Ni, and the thickness of the metal conductive layer is 180nm; the material of the bottom blackened layer is Cu / Ni / Ti / Cr alloy oxynitride, and the thickness of the bottom blackened layer is 10nm; the material of the buffer transition layer is silicon dioxide, and the thickness is 20nm; the thickness of the substrate coating layer is 1μm; the material of the flexible substrate layer includes PET / TAC / PMMA / CPI.

[0025] Example 7 The highly weather-resistant blackened metal conductive film provided in the present embodiment includes a surface blackened layer, a metal conductive layer, a bottom blackened layer, a buffer transition layer, a substrate coating layer and a flexible substrate layer. The structure of the conductive film includes, from top to bottom, a surface blackened layer, a metal conductive layer, a bottom blackened layer, a buffer transition layer, a substrate coating layer and a flexible substrate layer, wherein the material of the surface blackened layer is Cu / Ni / Ti / Cr alloy oxynitride, and the thickness of the surface blackened layer is 6nm; the material of the metal conductive layer is Cu, and the thickness of the metal conductive layer is 150nm; the material of the bottom blackened layer is Cu / Ni / Ti / Cr alloy oxynitride, and the thickness of the bottom blackened layer is 7nm; the material of the buffer transition layer is silicon dioxide, and the thickness is 10nm; the thickness of the substrate coating layer is 2μm; the material of the flexible substrate layer includes PET / TAC / PMMA / CPI.

[0026] Example 8 The highly weather-resistant blackened metal conductive film provided in the present embodiment includes a surface blackened layer, a metal conductive layer, a bottom blackened layer, a buffer transition layer, a substrate coating layer and a flexible substrate layer. The structure of the conductive film includes, from top to bottom, a surface blackened layer, a metal conductive layer, a bottom blackened layer, a buffer transition layer, a substrate coating layer and a flexible substrate layer, wherein the material of the surface blackened layer is Cu / Ni / Ti / Cr alloy oxynitride, and the thickness of the surface blackened layer is 8nm; the material of the metal conductive layer is Ag, and the thickness of the metal conductive layer is 100nm; the material of the bottom blackened layer is Cu / Ni / Ti / Cr alloy oxynitride, and the thickness of the bottom blackened layer is 8nm; the material of the buffer transition layer is silicon dioxide, and the thickness is 15nm; the thickness of the substrate coating layer is 2.5μm; the material of the flexible substrate layer includes PET / TAC / PMMA / CPI.

[0027] Comparative Example 1 Compared with Example 1, the only difference is that the material of the surface blackening layer is copper oxide.

[0028] Comparative Example 2 Compared with Example 1, the only difference is that the structure of the conductive film is that the flexible substrate layer is the central layer, the upper layer and the lower layer of the flexible substrate layer are symmetrical, and from the outside to the inside are the buffer transition layer, the surface black layer, the metal conductive layer, the bottom black layer, and the substrate coating layer. The remaining steps and parameters are the same as in Example 1.

[0029] The performance tests of the embodiments and comparative examples are shown in Table 1. The surface resistance is detected by the DC comparison method; the light reflectivity is detected by the laser direct measurement method; the weather resistance is detected by the double 85 aging test method, that is, the high temperature and high humidity are 85℃±2℃ and the humidity is 85%±5%, and the low temperature and low humidity are -40℃±2℃ and the humidity is 5%±5%, and the temperature changes between high temperature and high humidity and low temperature and low humidity, and the test is checked after a period of time.

[0030] Table 1 Performance data of Examples 1 to 8 and Comparative Examples 1 to 2

[0031] According to Table 1, the blackened metal conductive films prepared in Examples 1-2 have strong conductivity, low surface reflectivity, high weather resistance, and the use of alloy nitride does not affect the downstream etching process.

[0032] The above are preferred embodiments of the present invention. It should be pointed out that, for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present invention. These improvements and modifications should also be regarded as within the scope of protection of the present invention.

Claims

1. A highly weather-resistant blackened metal conductive film, characterized in that: It includes a surface blackening layer, a metal conductive layer, a bottom blackening layer, a buffer transition layer, a substrate coating layer and a flexible substrate layer.

2. The highly weather-resistant blackened metal conductive film according to claim 1, characterized in that: The conductive film comprises, from top to bottom, a surface blackened layer, a metal conductive layer, a bottom blackened layer, a buffer transition layer, a substrate coating layer and a flexible substrate layer.

3. The highly weather-resistant blackened metal conductive film according to claim 1, characterized in that: The conductive film has a flexible substrate layer as the central layer, and the upper and lower layers of the flexible substrate layer are symmetrical, and from the outside to the inside are the surface black layer, the metal conductive layer, the bottom black layer, the buffer transition layer, and the substrate coating layer.

4. The highly weather-resistant blackened metal conductive film according to claim 1, characterized in that: The material of the surface blackened layer is Cu / Ni / Ti / Cr alloy oxynitride, and the thickness of the surface blackened layer is 5-10 nm.

5. The highly weather-resistant blackened metal conductive film according to claim 1, characterized in that: The material of the metal conductive layer is any one of Cu, Ni, Ag and Al, and the thickness of the metal conductive layer is 100-1000 nm.

6. The highly weather-resistant blackened metal conductive film according to claim 1, characterized in that: The material of the bottom black layer is Cu / Ni / Ti / Cr alloy oxynitride, and the thickness of the bottom black layer is 5-10 nm.

7. The highly weather-resistant blackened metal conductive film according to claim 1, characterized in that: The material of the buffer transition layer is silicon dioxide, and the thickness is 5-20nm.

8. The highly weather-resistant blackened metal conductive film according to claim 1, characterized in that: The thickness of the substrate coating layer is 0.5-2.5 μm.

9. The highly weather-resistant blackened metal conductive film according to claim 1, characterized in that: The material of the flexible substrate layer includes PET / TAC / PMMA / CPI.

Citation Information

Patent Citations

  • Double-sided copper-plated copper film composite material, electronic device and equipment

    CN117476272A

  • Double-sided blackened copper conductive film

    CN217690518U