IGCT power module with straight-through short circuit protection function and flexible direct current converter valve

Abstract

The invention discloses an IGCT power module with a straight-through short circuit protection function and a flexible direct current converter valve. The IGCT power module with the straight-through short-circuit protection function comprises a direct-current capacitor, a first IGCT, a second IGCT, a first diode, a second diode, a bypass switch, an anode reactor, a clamping capacitor, a clamping resistor, a clamping diode and a straight-through protection circuit. The straight-through protection circuit is connected between the anode reactor and the clamping diode; or the straight-through protection circuit is connected between the clamping diode and the first IGCT; or the straight-through protection circuit is connected between the direct-current capacitor and the clamping capacitor; or the straight-through protection circuit is connected between the clamping capacitor and the second IGCT; the straight-through protection circuit is used for monitoring loop current in real time, discovering a straight-through short circuit fault in time and carrying out fault protection processing. According to the invention, the protection of the IGCT power module under a straight-through short-circuit fault can be realized by adding the straight-through protection circuit.

Description

Technical Field

[0001] The embodiments of the present invention relate to the field of power electronics technology, and in particular to an IGCT power module and a flexible direct current converter valve with a direct short circuit protection function. Background Art

[0002] With the increasingly serious pollution caused by fossil energy and the continuous development of new energy power generation, the efficient and reliable transmission of new energy power generation has become a key issue. Since new energy power generation is often far away from the load center, flexible direct current transmission technology has significant advantages for long-distance and large-capacity power transmission. The core equipment of flexible direct current transmission is the converter valve, which undertakes key tasks such as AC / DC conversion, power flow control, and fault ride-through.

[0003] The traditional flexible direct current valve adopts the cascade method based on the press-fit insulated gate bipolar transistor (IGBT) power module. The press-fit IGBT device has the advantages of failure short circuit and double-sided heat dissipation. However, due to the use of multiple chips in parallel, the manufacturing cost is increased and the reliability of the device is reduced. Compared with IGBT, the integrated gate-commutated thyristor (IGCT) device is a whole wafer structure with lower on-state voltage drop, higher reliability and lower manufacturing cost. However, due to the positive feedback conduction characteristics of the IGCT device itself, it does not have the return protection and characteristics of the IGBT device. When a direct short circuit fault occurs, it is impossible to rely on the driver board and the device to achieve short-circuit protection, resulting in severe damage to the IGCT power module under the direct short circuit fault. Summary of the invention

[0004] The present invention provides an IGCT power module and a flexible DC-DC converter valve with a direct short-circuit protection function, which can protect the IGCT power module in the event of a direct short-circuit fault by adding a direct protection circuit.

[0005] According to one aspect of the present invention, an IGCT power module with a direct short-circuit protection function is provided, and the IGCT power module with the direct short-circuit protection function includes: a DC capacitor, a first IGCT, a second IGCT, a first diode, a second diode, a bypass switch, an anode reactor, a clamping capacitor, a clamping resistor, a clamping diode, and a direct protection circuit;

[0006] The first end of the DC capacitor is connected to the first end of the clamp resistor and the first end of the anode reactor, the second end of the clamp resistor is connected to the cathode of the clamp diode and the first end of the clamp capacitor, the second end of the clamp capacitor is connected to the second end of the DC capacitor, the cathode of the second IGCT, the anode of the second diode and the second end of the bypass switch, the second end of the anode reactor is connected to the anode of the clamp diode, the anode of the first IGCT and the cathode of the first diode, and the first end of the bypass switch is connected to the cathode of the first IGCT, the anode of the first diode, the anode of the second IGCT and the cathode of the second diode;

[0007] The shoot-through protection circuit is connected between the DC capacitor and the clamping resistor; or, the shoot-through protection circuit is connected between the clamping resistor and the anode reactor; or, the shoot-through protection circuit is connected between the anode reactor and the clamping diode; or, the shoot-through protection circuit is connected between the clamping diode and the first IGCT; or, the shoot-through protection circuit is connected between the DC capacitor and the clamping capacitor; or, the shoot-through protection circuit is connected between the clamping capacitor and the second IGCT; the shoot-through protection circuit is used to monitor the loop current in real time, promptly discover the shoot-through short-circuit fault, and perform fault protection processing.

[0008] Optionally, the shoot-through protection circuit comprises: at least one IGBT, a Hall current sensor and a control board;

[0009] The control board is connected between the Hall current sensor and the IGBT, and the Hall current sensor is used to detect the current value of the IGCT power module circuit in real time and upload it to the control board;

[0010] The control board is connected to the control end of the IGBT, and is used to control the IGBT to turn off when a through short circuit fault occurs in the IGCT power module and the current value exceeds a fault protection threshold.

[0011] Optionally, the through protection circuit further includes: a fuse;

[0012] The fuse is connected to the IGBT, and is used to protect the IGCT power module by fusing when the IGBT fails and cannot be turned off.

[0013] Optionally, the IGBT includes a welding type device or a crimping type device.

[0014] Optionally, the fuse is connected to the first end of the IGBT;

[0015] Alternatively, the fuse is connected to the second end of the IGBT.

[0016] Optionally, the first end of the IGBT is a collector or an emitter, and the second end of the IGBT is a collector or an emitter.

[0017] Optionally, the shoot-through protection circuit is connected between the DC capacitor and the clamping resistor; or, the shoot-through protection circuit is connected between the clamping resistor and the anode reactor; or, the shoot-through protection circuit is connected between the anode reactor and the clamping diode; or, when the shoot-through protection circuit is connected between the clamping diode and the first IGCT, the first end of the IGBT is the collector and the second end of the IGBT is the emitter;

[0018] The shoot-through protection circuit is connected between the DC capacitor and the clamping capacitor; or, when the shoot-through protection circuit is connected between the clamping capacitor and the second IGCT, the first end of the IGBT is the emitter and the second end of the IGBT is the collector.

[0019] Optionally, the shoot-through protection circuit includes: at least two IGBTs, and the two IGBTs are connected in parallel between the Hall current sensor and the fuse.

[0020] Optionally, the through short circuit fault for which the IGCT power module is used to implement fault protection processing includes at least one of: direct connection between the first IGCT and the second IGCT, direct connection between the first IGCT and the second diode, direct connection between the first diode and the second IGCT, and direct connection between the first IGCT and the bypass switch.

[0021] According to another aspect of the present invention, a flexible DC converter valve is provided, the flexible DC converter valve comprising the IGCT power module with a direct-through short-circuit protection function as described in any embodiment of the present invention.

[0022] The technical solution of the embodiment of the present invention provides an IGCT power module with a straight-through short-circuit protection function. By adding a straight-through protection circuit, the straight-through protection circuit can be flexibly arranged at multiple positions in the IGCT power module, real-time monitoring of the loop current, timely detection of the straight-through short-circuit fault, and fault protection processing to achieve protection of the IGCT power module under the straight-through short-circuit fault. In summary, the problem that the existing IGCT device does not have the return of insurance and characteristics of the IGBT device, and when a straight-through short-circuit fault occurs, the IGCT power module is severely damaged under the straight-through short-circuit fault, is solved.

[0023] It should be understood that the contents described in this section are not intended to identify the key or important features of the embodiments of the present invention, nor are they intended to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0025] Figure 1 is a structural schematic diagram of an IGCT power module with a direct short-circuit protection function provided according to an embodiment of the present invention;

[0026] Figure 2 is a schematic structural diagram of a through short-circuit protection circuit provided according to an embodiment of the present invention;

[0027] Figure 3 It is a schematic structural diagram of a through short-circuit protection circuit provided by an embodiment of the present invention using multiple IGBTs connected in parallel;

[0028] Figure 4 It is a schematic structural diagram of an IGBT provided according to an embodiment of the present invention, wherein the first end is a collector and the second end is an emitter;

[0029] Figure 5 It is a schematic structural diagram of an IGBT provided according to an embodiment of the present invention, wherein the first end is an emitter and the second end is a collector. DETAILED DESCRIPTION

[0030] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0031] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0032] Figure 1 is a schematic diagram of the structure of an IGCT power module with a through short-circuit protection function provided according to an embodiment of the present invention, with reference to Figure 1 The embodiment of the present invention provides an IGCT power module with a direct short circuit protection function. The IGCT power module with a direct short circuit protection function includes: a DC capacitor C, a first IGCTT1, a second IGCTT2, a first diode D1, a second diode D2, a bypass switch S, and an anode reactor L. i , Clamping capacitor C CL , clamping resistor Rs, clamping diode D CL and a shoot-through protection circuit 10;

[0033] The first end of the DC capacitor C is connected to the first end of the clamp resistor Rs and the anode reactor L i The first end of the clamp resistor Rs is connected to the clamp diode D CL The cathode and clamping capacitor C CL The first end of the clamp capacitor C CL The second end of the anode reactor L is connected to the second end of the DC capacitor C, the cathode of the second IGCT T2, the anode of the second diode D2 and the second end of the bypass switch S. i The second end of the clamping diode D CL The anode of the first IGCTT1, the anode of the first diode D1 and the cathode of the first diode D1 are connected, and the first end of the bypass switch S is connected to the cathode of the first IGCTT1, the anode of the first diode D1, the anode of the second IGCT T2 and the cathode of the second diode D2;

[0034] The shoot-through protection circuit 10 is connected between the DC capacitor C and the clamp resistor Rs; or, the shoot-through protection circuit 10 is connected between the clamp resistor Rs and the anode reactor L i Alternatively, the through protection circuit 10 is connected to the anode reactor L i and clamping diode DCL Alternatively, the through protection circuit 10 is connected to the clamping diode D CL and the first IGCTT1; or, the through protection circuit 10 is connected between the DC capacitor C and the clamping capacitor C CL Alternatively, the through protection circuit 10 is connected to the clamping capacitor C CL The through protection circuit 10 is used to monitor the loop current in real time, detect the through short circuit fault in time, and perform fault protection processing.

[0035] Specifically, the shoot-through protection circuit 10 can be centrally arranged or separately arranged at different positions in the IGCT power module circuit, such as Figure 1 The six positions 1 to 6 shown in the figure. The through protection circuit 10 can be composed of an IGBT, a Hall current sensor, a fuse series circuit and a control board. When a through short circuit fault occurs in the IGCT power module, the loop current will rise rapidly. The Hall current sensor in the through protection circuit 10 detects the current value in real time and uploads it to the control board. After the current value exceeds the fault protection threshold, the control board will control the IGBT in the through protection circuit to quickly shut down, disconnect the through short circuit path, avoid the DC capacitor C from discharging and generating a large energy release, and protect the IGCT power module. When the IGBT in the through protection circuit 10 fails and cannot be shut down, the fuse in the through protection circuit 10 will be blown, avoiding the further release of the energy of the DC capacitor C and protecting the IGCT power module. The through protection circuit 10 can be flexibly arranged at multiple positions in the IGCT power module, monitor the loop current in real time, detect the through short circuit fault in time, and perform fault protection processing. It is very suitable for high-power equipment applications based on IGCT such as IGCT flexible DC converter valves.

[0036] The technical solution of the embodiment of the present invention provides an IGCT power module with a straight-through short-circuit protection function. By adding a straight-through protection circuit, the straight-through protection circuit can be flexibly arranged at multiple positions in the IGCT power module, real-time monitoring of the loop current, timely detection of the straight-through short-circuit fault, and fault protection processing to achieve protection of the IGCT power module under the straight-through short-circuit fault. In summary, the problem that the existing IGCT device does not have the return of insurance and characteristics of the IGBT device, and when a straight-through short-circuit fault occurs, the IGCT power module is severely damaged under the straight-through short-circuit fault, is solved.

[0037] Figure 2 is a schematic diagram of a straight-through short-circuit protection circuit provided according to an embodiment of the present invention, with reference to Figure 2 , Optionally, the shoot-through protection circuit 10 includes: at least one IGBT 11, a Hall current sensor 12 and a control board 13;

[0038] The control board 13 is connected between the Hall current sensor 12 and the IGBT 11. The Hall current sensor 12 is used to detect the current value of the IGCT power module circuit in real time and upload it to the control board 13.

[0039] The control board 13 is connected to the control end of the IGBT 11 . The control board 13 is used to control the IGBT 11 to turn off when a through short circuit fault occurs in the IGCT power module and the current value exceeds the fault protection threshold.

[0040] Specifically, when a through short circuit fault occurs in the IGCT power module, the loop current will rise rapidly, and the Hall current sensor 12 detects the current value in the loop in real time and uploads it to the control board 13; after the control board 13 receives that the current value exceeds the fault protection threshold, it sends a command to control the IGBT11 in the through protection circuit 10 to shut down quickly, disconnect the through short circuit path, avoid the DC capacitor discharge to produce a large energy release, and protect the IGCT power module.

[0041] Continue to refer Figure 2 , Optionally, the through protection circuit 10 further includes: a fuse 14;

[0042] The fuse 14 is connected to the IGBT 11 , and is used to protect the IGCT power module by fusing when the IGBT 11 fails and cannot be turned off.

[0043] Specifically, when the IGBT 11 in the shoot-through protection circuit 10 fails and cannot be shut down normally, the series fuse 14 in the shoot-through protection circuit 10 will be blown to prevent further release of the DC capacitor energy and protect the IGCT power module.

[0044] Figure 3 FIG. 1 is a schematic diagram of a through short-circuit protection circuit according to an embodiment of the present invention, wherein a plurality of IGBTs are connected in parallel. Figure 3 Optionally, the shoot-through protection circuit includes: at least two IGBTs 11 , and the two IGBTs 11 are connected in parallel between the Hall current sensor 12 and the fuse 14 .

[0045] Specifically, the IGBT11 may be a single device or a plurality of devices connected in parallel.

[0046] Optionally, the IGBT includes a soldering type device or a press-fit type device.

[0047] Specifically, the IGBT device may be a welding type device or a pressing type device.

[0048] Optionally, the fuse is connected to the first end of the IGBT;

[0049] Alternatively, the fuse is connected to the second terminal of the IGBT.

[0050] Optionally, the first end of the IGBT is a collector or an emitter, and the second end of the IGBT is a collector or an emitter.

[0051] Figure 4 is a schematic diagram of a structure of an IGBT provided according to an embodiment of the present invention, wherein the first end is a collector and the second end is an emitter. Figure 4 and Figure 1 Optionally, the through protection circuit 10 is connected between the DC capacitor C and the clamping resistor Rs; or, the through protection circuit 10 is connected between the clamping resistor Rs and the anode reactor L i Alternatively, the through protection circuit 10 is connected to the anode reactor L i and clamping diode D CL Alternatively, the through protection circuit 10 is connected to the clamping diode D CL When the first IGCTT1 is connected to the first IGBT, the first end of the IGBT is the collector and the second end of the IGBT is the emitter;

[0052] Figure 5 is a schematic diagram of a structure of an IGBT provided according to an embodiment of the present invention, wherein the first end is an emitter and the second end is a collector. Figure 5 and Figure 1 , the shoot-through protection circuit 10 is connected between the DC capacitor C and the clamping capacitor C CL Alternatively, the through protection circuit 10 is connected to the clamping capacitor C CL When the first terminal of the IGBT is connected to the second IGCTT2, the first terminal of the IGBT is the emitter, and the second terminal of the IGBT is the collector.

[0053] Specifically, the IGBT 11, the Hall current sensor 12 and the fuse 14 in the shoot-through protection circuit 10 can be centrally arranged or separately arranged at different positions in the IGCT power module series circuit, such as Figure 1 The six positions 1 to 6 are shown in the figure. The emitter and collector directions of the IGBT depend on the layout position. Figure 1 When the position is 1 to 4, the first end (left side) of the IGBT is the collector, and the second end (right side) of the IGBT is the emitter. Figure 4 When the IGBT is arranged in Figure 1 When the 5 and 6 positions are in the figure, the first end (left side) of the IGBT is the emitter, and the second end (right side) of the IGBT is the collector. Figure 5 shown.

[0054] Continue to refer Figure 1Optionally, the through short circuit fault for which the IGCT power module is used to implement fault protection processing includes at least one of: the first IGCTT1 and the second IGCTT2 are directly connected, the first IGCTT1 and the second diode D2 are directly connected, the first diode D1 and the second IGCTT2 are directly connected, and the first IGCTT1 and the bypass switch S are directly connected.

[0055] Specifically, the through short circuit fault conditions that the through protection circuit 10 can protect include the first IGCTT1 and the second IGCTT2 being through, the first IGCTT1 and the second diode D2 being through, the first diode D1 and the second IGCTT2 being through, and the first IGCTT1 and the bypass switch S being through.

[0056] An embodiment of the present invention further provides a flexible DC-DC converter valve, which includes an IGCT power module with a direct-through short-circuit protection function according to any embodiment of the present invention.

[0057] Since the flexible DC converter valve includes the IGCT power module with direct short-circuit protection function provided by any embodiment of the present invention, the above-mentioned flexible DC converter valve has the same beneficial effects as the IGCT power module with direct short-circuit protection function, which will not be repeated here.

[0058] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. An IGCT power module with a direct short-circuit protection function, characterized in that: include: A DC capacitor, a first IGCT, a second IGCT, a first diode, a second diode, a bypass switch, an anode reactor, a clamping capacitor, a clamping resistor, a clamping diode, and a shoot-through protection circuit; The first end of the DC capacitor is connected to the first end of the clamp resistor and the first end of the anode reactor, the second end of the clamp resistor is connected to the cathode of the clamp diode and the first end of the clamp capacitor, the second end of the clamp capacitor is connected to the second end of the DC capacitor, the cathode of the second IGCT, the anode of the second diode and the second end of the bypass switch, the second end of the anode reactor is connected to the anode of the clamp diode, the anode of the first IGCT and the cathode of the first diode, and the first end of the bypass switch is connected to the cathode of the first IGCT, the anode of the first diode, the anode of the second IGCT and the cathode of the second diode; The shoot-through protection circuit is connected between the DC capacitor and the clamping resistor; or, the shoot-through protection circuit is connected between the clamping resistor and the anode reactor; or, the shoot-through protection circuit is connected between the anode reactor and the clamping diode; or, the shoot-through protection circuit is connected between the clamping diode and the first IGCT; or, the shoot-through protection circuit is connected between the DC capacitor and the clamping capacitor; or, the shoot-through protection circuit is connected between the clamping capacitor and the second IGCT; the shoot-through protection circuit is used to monitor the loop current in real time, promptly discover the shoot-through short-circuit fault, and perform fault protection processing.

2. The module according to claim 1, characterized in that The shoot-through protection circuit comprises: at least one IGBT, a Hall current sensor and a control board; The control board is connected between the Hall current sensor and the IGBT, and the Hall current sensor is used to detect the current value of the IGCT power module circuit in real time and upload it to the control board; The control board is connected to the control end of the IGBT, and is used to control the IGBT to turn off when a through short circuit fault occurs in the IGCT power module and the current value exceeds a fault protection threshold.

3. The module according to claim 2, characterized in that The through protection circuit further includes: a fuse; The fuse is connected to the IGBT, and is used to protect the IGCT power module by fusing when the IGBT fails and cannot be turned off.

4. The module according to claim 1, characterized in that The IGBT includes a welding type device or a pressing type device.

5. The module according to claim 3, characterized in that The fuse is connected to the first end of the IGBT; Alternatively, the fuse is connected to the second end of the IGBT.

6. The module according to claim 5, characterized in that The first end of the IGBT is a collector or an emitter, and the second end of the IGBT is a collector or an emitter.

7. The module according to claim 6, characterized in that The shoot-through protection circuit is connected between the DC capacitor and the clamp resistor; or, the shoot-through protection circuit is connected between the clamp resistor and the anode reactor; or, the shoot-through protection circuit is connected between the anode reactor and the clamp diode; or, when the shoot-through protection circuit is connected between the clamp diode and the first IGCT, the first end of the IGBT is the collector and the second end of the IGBT is the emitter; The shoot-through protection circuit is connected between the DC capacitor and the clamping capacitor; or, when the shoot-through protection circuit is connected between the clamping capacitor and the second IGCT, the first end of the IGBT is the emitter and the second end of the IGBT is the collector.

8. The module according to claim 3, characterized in that The shoot-through protection circuit includes: at least two IGBTs, which are connected in parallel between the Hall current sensor and the fuse.

9. The module according to claim 1, characterized in that The through short circuit fault for which the IGCT power module is used to implement fault protection processing includes at least one of: the first IGCT and the second IGCT are directly connected, the first IGCT and the second diode are directly connected, the first diode and the second IGCT are directly connected, and the first IGCT and the bypass switch are directly connected.

10. A flexible direct current valve, characterized in that: The flexible direct current converter valve comprises an IGCT power module with a direct short-circuit protection function as described in any one of claims 1 to 9.

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