Resistor arrangement and transistor device having the same

Abstract

The invention discloses a resistor arrangement structure and a transistor device having the same.

Description

Technical Field

[0001] The present invention generally relates to a resistor arrangement, and more particularly to a resistor arrangement comprising a conductive resistor layer and two strip-shaped contact electrodes. Background Art

[0002] A resistor arrangement, in particular a resistor arrangement in an integrated circuit, may include a resistor layer and two strip contact electrodes, which are respectively connected to the resistor layer and are parallel to each other. When a voltage is applied between the contact electrodes, current flows from one contact electrode through the resistor layer to the other contact electrode. At the longitudinal ends of the contact electrodes, current crowding may occur. That is, the current density at the position near the longitudinal end of the contact electrode in the resistor layer may be higher than the current density at the position far from the longitudinal end. This may cause the resistor layer to be overheated in the area near the longitudinal end of the contact electrode. In particular, when the resistor arrangement is part of an integrated circuit, this may cause partial overheating of the integrated circuit and may cause reliability failures. Summary of the invention

[0003] There is a need for a resistor arrangement which can avoid or at least reduce current crowding at the longitudinal ends of strip-shaped contact electrodes.

[0004] One example relates to a resistor arrangement structure. The resistor arrangement structure includes a resistor layer. In addition, the resistor arrangement structure includes a first contact electrode and a second contact electrode, which are respectively formed on the top of the resistor layer and are respectively connected to the resistor layer. The first contact electrode and the second contact electrode are spaced apart from each other in a first direction. Each of the first contact electrode and the second contact electrode includes an inner portion extending longitudinally in a second direction perpendicular to the first direction. The inner portion of the first contact electrode and the inner portion of the second contact electrode are at least approximately parallel to each other, and at least one of the first contact electrode and the second contact electrode includes at least one end portion, which is adjacent to the corresponding inner portion and is spaced apart from the other of the first contact electrode and the second contact electrode by a distance greater than a distance between the inner portion of the first contact electrode and the inner portion of the second contact electrode.

[0005] Another example involves a transistor device having a gate resistor conforming to this resistor arrangement. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] The following examples are explained with reference to the accompanying drawings. The accompanying drawings are used to illustrate certain principles and therefore only show aspects necessary for understanding these principles. The accompanying drawings are not drawn to scale. In the accompanying drawings, the same reference numerals represent the same features.

[0007] Figure 1schematically shows a cross-sectional view of a resistor arrangement comprising a resistive layer and two contact electrodes;

[0008] Figure 2 schematically shows a top view of a contact electrode according to an example;

[0009] Figure 3A-3B Details of the first contact electrode are shown;

[0010] Figure 4-Figure 7 shows a top view of a contact electrode according to another example;

[0011] Figure 8-Figure 9 Another example of a resistor arrangement is shown;

[0012] Figure 10A-10B An example of a contact electrode is shown in more detail;

[0013] Figure 11A-11B Further examples of contact electrodes are shown in more detail;

[0014] Figure 12A-12B 10 and 11 show top views of a transistor device according to an example, the transistor device including a resistor arrangement structure connected between a gate pad and a gate flow channel;

[0015] Fig.13 Shown according to Figure 12A-12B A vertical cross-sectional view of a resistor arrangement structure included in a transistor device;

[0016] Figure 14A-14B They are shown according to Figure 12A-12B A top view of a resistor layer of a resistor arrangement structure included in a transistor device;

[0017] Fig.15 A vertical cross-sectional view showing a gate flow channel and a portion of a resistive layer;

[0018] Fig.16 An enlarged top view of the resistive layer and the contact electrode is shown;

[0019] Fig.17 schematically illustrates a vertical cross-sectional view of a transistor cell according to an example; and

[0020] Fig.18 Schematically shows Fig.17 A horizontal cross-sectional view of a transistor cell is shown. DETAILED DESCRIPTION

[0021] In the following detailed description, reference is made to the accompanying drawings. The accompanying drawings constitute a part of the specification and, for illustrative purposes, show examples of how the invention can be used and implemented. It should be understood that the features of the various embodiments described herein may be combined with each other unless otherwise specifically stated.

[0022] Figure 1 Schematically shows an example of a resistor arrangement structure, which includes a resistor layer 3 and a first contact electrode 4 and a second contact electrode 6. More specifically, Figure 1 A vertical cross-sectional view of the resistor arrangement in a vertical section substantially perpendicular to the first surface 301 of the resistor layer 3 is schematically shown.

[0023] See also Figure 1 , the first contact electrode 4 and the second contact electrode 6 are respectively formed on the top of the resistive layer 3 and are (ohmically) connected to the resistive layer 3. The first contact electrode 4 and the second contact electrode 6 are spaced apart from each other in a first direction x. The first direction x is a lateral direction, which is a direction substantially parallel to the first surface 301 of the resistive layer 3.

[0024] Figure 2 Schematically shows a top view of a first contact electrode 4 and a second contact electrode 6 according to an example. Figure 2 In the figure, only the first contact electrode 4 and the second contact electrode 6 are schematically shown. The resistor layer 3 is not shown in this figure.

[0025] See also Figure 2 The first contact electrode 4 and the second contact electrode 6 include inner portions 41 and 61 , respectively, wherein the inner portions 41 and 61 both extend longitudinally along a second direction y perpendicular to the first direction x.

[0026] The second direction y is a lateral direction, which is a direction substantially parallel to the first surface 301 of the resistance layer 3 .

[0027] The inner parts 41 , 61 of the first contact electrode 4 and the second contact electrode 6 are at least approximately parallel to each other.

[0028] When a voltage is applied between the first contact electrode 4 and the second contact electrode 6, a current may flow from one of the first contact electrode 4 and the second contact electrode 6 to the other of the first contact electrode 4 and the second contact electrode 6 through the resistive layer 3. In order to prevent current crowding at the longitudinal ends of the first contact electrode 4 and the second contact electrode 6, at least one of the first contact electrode 4 and the second contact electrode 6 includes at least one end portion that is adjacent to the corresponding inner portion and is spaced apart from the other of the first contact electrode and the second contact electrode by a distance greater than the distance d between the inner portions 41, 61 of the first contact electrode 4 and the second contact electrode 6. The distance d is the (shortest) distance between the inner portions 41, 61 of the first contact electrode 4 and the second contact electrode 6 in the first transverse direction x.

[0029] According to an example, the distance d between the inner parts 41, 61 is selected from a range between 10 micrometers and several hundred micrometers, for example between 15 micrometers and 300 micrometers. As further explained below, the distance d affects the resistance of the resistor arrangement. Basically, the resistance increases with increasing distance d.

[0030] exist Figure 2 In the example shown, the first contact electrode 4 includes a first end portion 44 and a second end portion 45 in addition to the inner portion 41. Each of the first end portion 44 and the second end portion 45 is adjacent to the inner portion 41, wherein the first end portion 44 is arranged between the inner portion 41 and a first longitudinal end 42 of the first contact electrode 4, and the second end portion 45 is arranged between the inner portion 41 and a second longitudinal end 43 opposite to the first longitudinal end 42.

[0031] exist Figure 2 In the example shown, the first end portion 44 and the second end portion 45 are straight electrode portions that are inclined relative to the inner portion 41, so that the respective spacing distances between the first end portion 44 and the second end portion 45 and the second contact electrode 6 are greater than the distance d between the inner portions 41, 61. In other words, the respective (shortest) distances between the first end portion 44 and the second end portion 45 and the second contact electrode 6 are greater than the distance d between the inner portions 41, 61.

[0032] Figure 3A and Figure 3B An enlarged view of the first end portion 44 and the second end portion 45 of the first contact electrode 4 and the corresponding adjacent portions of the inner portion 41 are shown. Figure 3A , the first end portion 44 may be inclined at a first angle α relative to the inner portion 41. Figure 3B, the second end portion 45 may be inclined at a second angle β relative to the inner portion 41. According to one example, the first angle α and the second angle β are both selected from a range between 15° and 45°. The first angle α and the second angle β may have the same value or may have different values.

[0033] According to an example, the length of the inner portion 41 of the first contact electrode 4 is at least 30 micrometers. The lengths of the first end portion 44 and the second end portion 45 are, for example, selected from the range between 2 micrometers and 10 micrometers. The first end portion 44 and the second end portion 45 can have the same length or different lengths.

[0034] Regarding the first transverse direction x and the second transverse direction y, it should be noted that, unless otherwise specified, the “first transverse direction” includes Figure 4 The direction indicated by the arrow marked with x and the opposite direction thereof. Similarly, the "second transverse direction" includes Figure 4 The arrow marked with y indicates the direction and its opposite direction.

[0035] exist Figure 2 In the example shown, the second contact electrode 6 comprises only a longitudinal portion which is parallel to the inner portion 41 of the first contact electrode 4. That is, in this example, the first contact electrode 6 comprises only the inner portion 61.

[0036] according to Figure 2 In the example shown, the second contact electrode 6 may be longer in the second lateral direction y than the first contact electrode 4. That is, the second contact electrode 6 may extend in the second lateral direction y beyond a first projected endpoint 42', which is obtained by projecting the first endpoint 42 of the first contact electrode 4 onto the second contact electrode 6 along the first lateral direction x. In addition, the second contact electrode 6 may extend in the second lateral direction y beyond a second projected endpoint 43', which is obtained by projecting the second endpoint 43 of the first contact electrode 4 onto the second contact electrode 6 along the first lateral direction x.

[0037] According to an example, the second contact electrode 6 extends in the second lateral direction beyond the first projected endpoint 42 ′ and the second projected endpoint 43 ′ by at least 10 micrometers, at least 50 micrometers or at least 100 micrometers respectively.

[0038] according to Figure 4 In another example shown, in the second lateral direction y, the second contact electrode 6 has the same size as the first contact electrode 4. This includes: the first projected endpoint 42' of the first contact electrode 4 is substantially at the same position as the first end 62 of the second contact electrode 6, and the second projected endpoint 43' of the first contact electrode 4 is substantially at the same position as the second end 63 of the second contact electrode 6.

[0039] Figure 5 and Figure 6 A top view of a first contact electrode 4 and a second contact electrode 6 according to further examples is shown. In each of these examples, the first contact electrode 4 and the second contact electrode 6 have substantially the same dimensions in the second lateral direction y.

[0040] exist Figure 5 In the example shown, the first contact electrode 4 and the second contact electrode 6 each have a first end portion and a second end portion 44, 45, 64, 65. The first end portion 64 of the second contact electrode 6 is an electrode portion adjacent to the inner portion 61, and is arranged between the inner portion 61 and the first longitudinal end 62 of the second contact electrode. The second end portion 65 of the second contact electrode 6 is an electrode portion adjacent to the inner portion 61, and is arranged between the inner portion 61 and the second longitudinal end 63 of the second contact electrode 6. All the contents explained above in this document regarding the inclination angles and lengths of the first end portion 44 and the second end portion 45 of the first contact electrode 4 also apply to the first end portion 64 and the second end portion 65 of the second contact electrode 6 accordingly.

[0041] exist Figure 6 In the example shown, the first contact electrode 4 and the second contact electrode 6 each have an end portion, wherein the end portions are arranged at opposite ends of the first contact electrode 4 and the second contact electrode 6, respectively. Figure 6 In the example shown, the first contact electrode 4 has a first end portion 44 of the type explained herein before and is arranged between the inner portion 41 and the first longitudinal end 42. The second contact electrode 6 has a second end portion 65 of the type explained herein before and is arranged between the inner portion 61 and the second longitudinal end 63.

[0042] In each of the examples explained herein before, the resistivity of the resistor arrangement increases towards the first longitudinal end 42 and the second longitudinal end 43 of the first contact electrode 4. This is due to the increase in the distance between the first contact electrode 4 and the second contact electrode 6 towards the first longitudinal end and the second longitudinal end of the first contact electrode 4. The increase in the distance may be due to the first contact electrode 4 including at least one end portion facing away from the second contact electrode 6 and / or the second contact electrode 6 including at least one end portion facing away from the first contact electrode 4.

[0043] In the examples explained earlier in this document, at least one end portion is a straight portion. However, this is only an example. According to another example, at least one end portion is a curved electrode portion. Figure 7 One example of a resistor arrangement structure including a contact electrode having a bent end portion is shown.

[0044] Figure 7 The resistor arrangement shown is based on Figure 2 The resistor arrangement shown. Therefore, Figure 7 The resistor arrangement shown comprises a first contact electrode 4 having a first end portion 44 and a second end portion 45, and comprises a second contact electrode 6 which is longer than the first contact electrode 4 in the second transverse direction y and comprises only a longitudinal inner portion 61. However, this is only an example. In each of the examples explained previously herein, one or more straight end portions 44, 45, 64, 65 may be replaced by a curved end portion.

[0045] In each case, the first contact electrode 4 can completely overlap the second contact electrode 6 . That is, the projection of the first contact electrode 4 onto the second contact electrode 6 is arranged between the first end 62 and the second end 63 of the second contact electrode 6 .

[0046] The resistor layer 3 is a conductive layer with a certain resistivity. According to one example, the resistor layer 3 is a doped polysilicon layer. The resistivity of the resistor layer is, for example, in the range of 1 ohm·m (Ω·m) to 20 ohm·m, in particular, in the range of 3 ohm·m to 10 ohm·m.

[0047] According to one example, the conductivity of the material of the first contact electrode 4 and the second contact electrode 6 is at least 10 times the conductivity of the resistive layer 3. Conductivity is the reciprocal of resistivity. According to one example, the first contact electrode 4 and the second contact electrode 6 include a metal, such as tungsten (W), titanium (Ti), aluminum (Al), copper (Cu), or an alloy made of two or more of these materials.

[0048] The resistance of the resistor arrangement depends on different parameters, such as the distance d between the inner parts 41, 61 of the first and second contact electrodes; the resistivity of the resistor layer 3; the dimension of the resistor arrangement in the second lateral direction y; and the thickness of the resistor layer 3. The thickness of the resistor layer 3 is the dimension of the resistor layer in a direction perpendicular to the first surface 301. Basically, the larger the distance d, the higher the resistance; the higher the resistivity, the higher the resistance; the shorter the dimension of the resistor arrangement in the second lateral direction y, the higher the resistance; the smaller the thickness of the resistor layer 3, the higher the resistance.

[0049] According to an example, the thickness of the resistance layer 3 is selected from the range between 0.1 micrometer and 1 micrometer, in particular, from the range between 0.3 micrometer and 0.9 micrometer.

[0050] See also Figure 8, each of the first contact electrode 4 and the second contact electrode 6 may be arranged in a corresponding groove of the insulating layer 5 formed on the top of the surface 301 of the resistance layer 3. Each of the first contact electrode 4 and the second contact electrode 6 may extend from the surface 501 of the insulating layer 5 through the insulating layer 5 downward to the resistance layer 3 in the corresponding groove. The insulating layer 5 is, for example, an oxide layer.

[0051] according to Fig. 9 In one example shown, the resistive layer 3 is embedded in the insulating layer 5 .

[0052] With reference to the above, the first contact electrode 4 and the second contact electrode 6 are in electrical contact with the resistive layer 3. To this end, the first contact electrode 4 and the second contact electrode 6 contact the resistive layer 3 at least at the surface of the resistive layer 3. However, the contact electrodes 4, 6 may also extend into the resistive layer 3, or even pass through the resistive layer 3. The latter Fig. 9 Shown by dotted lines.

[0053] The contact electrodes 4 , 6 can be embodied in various ways. Figure 10A-10B and Figure 11A-11B Different examples of implementing the contact electrodes 4 and 6 are shown. Fig. 10A and Fig.11A An example of the first contact electrode 4 is shown in more detail, respectively, Fig. 10B and Fig. 11B An example of a second contact electrode 6 is respectively shown in more detail.

[0054] refer to Fig. 10A and Fig.11A , the first contact electrode 4 is arranged in a first groove 504, which extends from the surface 501 of the insulating layer 5 through the insulating layer 5 downward to the resistive layer 3. Fig. 10A , the contact electrode 4 can completely fill the trench 504. Fig.11A As another example shown, the contact electrode 4 may cover the bottom and sidewalls of the trench 504 but not completely fill the trench 504, thereby leaving a gap in the trench 504. Optionally, the first contact electrode 4 also covers a portion of the surface 501 of the insulating layer 5 in the surface portion adjacent to the trench 504.

[0055] refer to Fig. 10B and Fig. 11B The second contact electrode 6 is arranged in a second groove 506, which extends from the surface 501 of the insulating layer 5 through the insulating layer 5 downward to the resistive layer 3. Fig. 10B , the contact electrode 6 can completely fill the trench 506. Fig. 11BAs another example shown, contact electrode 6 may cover the bottom and sidewalls of trench 506, but may not completely fill trench 506, thereby leaving a gap in trench 506. Optionally, contact electrode 6 also covers a portion of surface 501 of insulating layer 5 in a surface portion adjacent to trench 506.

[0056] exist Figure 10A-10B and Figure 11A-11B In the example shown, the first groove and the second groove extend to the surface of the resistor layer 3. However, this is only an example. According to another example, the grooves 504 and 506 extend into the resistor layer 3 (e.g. Fig. 10A and Fig. 10B ) or even extend through the resistive layer 3.

[0057] The resistor arrangement structure explained herein before can be used as a resistor in various semiconductor devices or semiconductor arrangements comprising a semiconductor body and at least one semiconductor device integrated in the semiconductor body. According to one example, the resistor arrangement structure is used as a gate resistor in a transistor device.

[0058] Fig. 12A and Fig. 12B 1 and 2 show top views of a transistor device according to an example. The transistor device includes a gate pad 71 and a gate runner 72, which are spaced apart from each other and formed above a semiconductor body 100. Fig. 12A In the example shown, the gate pad 71 is arranged substantially midway between two opposing side walls 103, 104 of the semiconductor body 100. Fig. 12B In the example shown in FIG. 4 , the gate pad 71 is arranged close to a corner formed by two adjacent side walls 104 , 105 of the semiconductor body 100 .

[0059] In accordance with Fig. 12A and Fig. 12B In each of the transistor devices of FIG. 1 , a resistor arrangement of the type explained herein before is connected between the gate pad 71 and the gate runner 72. Fig.13 It is explained in Fig.13 Shows Figure 12A-12B A vertical cross-sectional view of a portion of a transistor device in section AA shown in FIG. Fig.13 It can be seen that the resistor layer 3 is embedded in the insulating layer 5 formed on the top of the semiconductor body 100. That is, the resistor layer 3 is separated from the semiconductor body 100 by a first portion of the insulating layer 5 and separated from the gate pad 71 and the gate runner 72 by a second portion of the insulating layer 5.

[0060] The first contact electrode 4 is connected to the gate pad 71 and the second contact electrode 6 is connected to the gate runner 72, so that the resistor arrangement serves as a gate resistor connected between the gate pad 71 of the transistor device and the gate runner 72. The first contact electrode 4 and the second contact electrode 6 can be implemented according to any of the examples explained herein before.

[0061] refer to Figure 12A-12B , each transistor device may further include a source electrode 73, wherein the gate runner 72 surrounds the source electrode 73 in a horizontal direction. The semiconductor body 100 may include an inner region and an edge region. The inner region (which may also be referred to as an active region) includes a transistor cell and is essentially a region of the semiconductor body 100 that is arranged below the source electrode 73. Examples of transistor cells will be further explained below. The edge region is arranged between the inner region and the sidewall of the semiconductor body 100. According to an example, the gate runner 72 and the gate pad 71 are arranged above the edge region of the semiconductor body 100.

[0062] Figure 14A-14B Shown according to Figure 12A-12B A horizontal cross-sectional view of the transistor device in a horizontal plane cutting through the insulating layer 5 and the resistive layer 3. Figure 14A-14B The position of the source electrode 73 relative to the resistance layer 3 is shown by a dotted line.

[0063] exist Figure 14A-14B In the example shown, the resistive layer 3 is a continuous layer comprising a first portion 31 substantially in the form of and arranged below the gate pad 71 , and a second portion 32 substantially in the form of and arranged below the gate runner 72 .

[0064] Fig.15 Shows Figure 12A-12B A vertical cross-sectional view of a portion of each transistor device shown in FIG. 1 in vertical cross section BB cutting through the gate runner 72 and the second portion 32 of the resistive layer 3. Fig.15 The gate channel 72 can be electrically connected to the resistor layer 3 through a conductive contact via 74 , which extends from the gate channel 72 through the insulating layer 5 to the resistor layer 3 , particularly to the second portion 32 of the resistor layer 3 .

[0065] Fig.16 An enlarged top view of the adjacent portion of the first portion 31 and the second portion 32 of the resistor layer 3 is shown. Fig.16 Also shown are the first contact electrode 4 and the second contact electrode 6 of the resistor arrangement. Fig.16 An example of a contact via 74 connecting the first portion 31 of the resistive layer 3 to the gate runner 72 is also shown.

[0066] refer to Fig.16 , the contact via 74 may be spaced apart from the second contact electrode 6 of the resistor arrangement. However, this is only an example. According to another example (not shown), the contact via 74 abuts the second contact electrode 6. According to yet another example (not shown), the transistor device comprises a plurality of contact vias 74, which are spaced apart from each other and connect the second portion 32 of the resistor layer 3 to the gate runner 72.

[0067] With reference to the above, the transistor device may include a plurality of transistor cells arranged in an inner region of the semiconductor body 100 below the source electrode 73 . Fig.17 Schematically shows a transistor unit 10 according to an example. More specifically, Fig.17 A vertical cross-sectional view of a semiconductor body 100 forming a portion of a transistor cell 10 is shown. Fig.17 The section CC in corresponds to Figure 12A-12B Section CC shown in .

[0068] According to one example, the semiconductor body 100 includes a single-crystalline semiconductor material, such as silicon (Si) or silicon carbide (SiC).

[0069] refer to Fig.17 , each transistor cell 10 comprises a source region 11 of a first doping type, a body region 12 of a second doping type complementary to the first doping type, and a gate electrode 21. The gate electrode 21 is adjacent to the body region 12, is dielectrically insulated from the body region 12 by a gate dielectric 22, and is arranged in a gate trench 120 extending from a first surface 101 of the semiconductor body 100 into the semiconductor body 100.

[0070] refer to Fig.17 , the source region 11 and the body region 12 of two adjacent transistor cells 10 can be arranged in the mesa region between adjacent gate trenches 120. In this example, the body region 12 of the two adjacent transistor cells 10 can be formed by one continuous doping region of the second doping type. In addition, the two (other) adjacent transistor cells can share the gate electrode 21. That is, the gate electrode 21 of the two adjacent transistor cells can be formed by one continuous electrode arranged in one gate trench 120.

[0071] The gate electrode 21 includes a conductive material. Examples of conductive materials include doped polysilicon or metals, such as tungsten (W), titanium (Ti), copper (Cu), or aluminum (Al). The gate dielectric 22 includes, for example, an oxide. According to one example, the oxide is silicon dioxide (SiO2). The source electrode 73 includes a conductive material, such as aluminum (Al), copper (Cu), or aluminum-copper alloy (AlCu).

[0072] The source electrode 73 is electrically connected to the source region 11 and the body region 12 of the transistor cell 10. The respective connections between the source electrode 73 and the source region 11 and the body region 12 are only Fig.17 These connections can be implemented using respective conductive vias extending from the source electrode 73 through the insulating layer 5 to the source region 11 and the body region 12, respectively. This is well known and therefore no further explanation is required in this regard.

[0073] See also Fig.17 The transistor device further includes a drain region 13 of the first doping type and a drift region 14 of the first doping type. The drift region 14 is adjacent to the body region 12 , so that a PN junction is formed between the body region 12 and the drift region 14 .

[0074] Optionally, a buffer region 16 of the first doping type is arranged between the drift region 14 and the drain region 13 , and a doping concentration of the buffer region 16 is higher than a doping concentration of the drift region 14 and lower than a doping concentration of the drain region 13 .

[0075] according to Figure 1 The transistor device of the embodiment is a vertical transistor device. In this example, the drain region 13 is spaced apart from the source region 11 and the body region 12 of the transistor cell 10 in a vertical direction z of the semiconductor body 100. The vertical direction z is substantially perpendicular to the first surface 101 of the semiconductor body 100. According to an example, the drain region 13 adjoins a second surface 102 opposite to the first surface 101 of the semiconductor body 100.

[0076] See also Fig.17 , the gate trenches with the gate electrode 21 are spaced apart from each other in a first lateral direction x1 of the semiconductor body 100. The first lateral direction x1 is perpendicular to the vertical direction z of the semiconductor body 100. According to an example, the gate electrode 21 is implemented as a strip electrode (strip electrode). In this example, the gate electrode 21 is strip-shaped in a second lateral direction y1 perpendicular to the first lateral direction x1.

[0077] Fig.18 An example of a stripe-shaped gate electrode 21 is shown. Fig.18 Shown according to Fig.17 A portion of the semiconductor body 100 in a first horizontal cross section DD of FIG. 1 , which cuts through the gate trench 120 having the gate electrode 21 and the gate dielectric 22 .

[0078] According to one example, the transistor device is implemented as a superjunction transistor device. In this example, the transistor device includes a plurality of compensation regions 15 (shown in dashed lines) spaced apart from each other in a first lateral direction x1 of the semiconductor body 100. Each compensation region 15 is adjacent to a corresponding portion of the drift region 14. For illustration purposes only, Fig.15In the example shown, the compensation areas 15 are spaced apart from one another in the first lateral direction x1. According to another example (not shown), the compensation areas 15 are spaced apart from one another in the second lateral direction y1.

[0079] The transistor device can be operated in an on state or an off state. In the on state, there is a conductive path between the source region 11 and the drift region 14 along the gate dielectric in the body region 12. To this end, the drift region 14 is adjacent to the gate dielectric 22 and the body region 12 of at least one transistor cell 10. Each compensation region 15 is adjacent to at least one drift region 15 and is connected to the source electrode 73. Fig.17 In the example shown, each compensation region 15 adjoins the body region 12 of at least one transistor cell and is connected to the source electrode 73 via the respective body region 12 .

[0080] Drain region 13 forms a drain node D or is connected to the drain node D of the transistor device. Source electrode 73 forms a source node S or is connected to the source node S of the transistor device. Furthermore, gate electrode 21 is connected to gate pad 71 which forms a gate node G of the transistor device.

[0081] The transistor device can be operated in a conventional manner by applying a driving voltage (gate-source voltage) between the gate electrode 21 and the source electrode 73. When the driving voltage causes a conductive channel to be generated in the body region 12 along the gate dielectric 22 between the source region 11 and the drift region 14, the transistor device is in an on state (conductive state). When the conductive channel is interrupted, the transistor device is in an off state (blocking state).

[0082] The transistor device may be implemented as an N-type transistor device or a P-type transistor device. For example, when the driving voltage is higher than a predefined positive threshold voltage, the N-type transistor device is in an on state, and when the driving voltage is lower than the threshold voltage, the N-type transistor device is in an off state.

[0083] In an N-type transistor device, the doped region of the first doping type is an N-type region, and the doped region of the second doping type is a P-type region. In a P-type transistor device, the doped region of the first doping type is a P-type region, and the doped region of the second doping type is an N-type region.

[0084] The source region 11, the body region 12, the drift region 14, the compensation region 15, the buffer region 16 and the drain region 13 may also be referred to as active device regions. In an N-type transistor device, the doping concentration of the active device region is selected from the following ranges, for example:

[0085] Source area 11: 5×10 19 cm -3 – 5×10 20 cm -3

[0086] Body zone 12: 3×10 19 cm -3 – 3×10 20 cm -3

[0087] Drain area 13: 5×10 18 cm -3 – 5×10 20 cm -3

[0088] Drift Zone 14: 7×10 15 cm -3 – 7×10 16 cm -3

[0089] Compensation zone 15: 7×10 15 cm -3 – 7×10 16 cm -3

[0090] Buffer 16: 5×10 15 cm -3 – 5×10 16 cm -3

[0091] Body contact area 17: 1×10 20 cm -3 – 1×10 21 cm -3 .

[0092] exist Figure 12A-12B , the transistor cell 10 is not in view. For illustration purposes only, the positions of two gate electrodes of the plurality of gate electrodes 21 relative to the source electrode 73 and the gate runner 72 are shown with bold lines. Each gate electrode 21 is electrically connected to the gate runner 72 at at least one longitudinal end. Figure 12A-12B In the example shown, the longitudinal ends of the gate electrode 21 are connected to the gate runner 72 in the region close to the side walls 103 , 104 .

[0093] According to an example, the gate electrode 21 is connected to the second portion 32 of the resistive layer 3, which is connected to the gate runner 72 through one or more contact vias 74. According to an example, the contact vias 74 and the gate runner 72 have a higher conductivity than the resistive layer 3, so that in those areas where the second portion 32 of the resistive layer 3 is parallel to the gate runner 72, most of the current flowing from the gate pad 71 to the gate electrode 21 or from the gate electrode 21 flows in the gate runner 72. Between the gate runner 72 and the gate pad 71, the current flows through the resistor arrangement structure, which has the first contact electrode 4 connected to the gate pad 71 and the second contact electrode 6 connected to the gate runner 72.

Claims

1. A resistor arrangement structure, comprising: Resistor layer (3); a first contact electrode (4) and a second contact electrode (6), wherein the first contact electrode (4) and the second contact electrode (6) are respectively formed on the top of the resistance layer (3) and are respectively connected to the resistance layer (3), The first contact electrode (4) and the second contact electrode (6) are spaced apart from each other in a first direction (x), Each of the first contact electrode (4) and the second contact electrode (6) comprises an inner portion (41, 61) extending longitudinally in a second direction (y) perpendicular to the first direction (x), The inner portions (41, 61) of the first contact electrode (4) and the second contact electrode (6) are at least approximately parallel to each other, and At least one of the first contact electrode (4) and the second contact electrode (6) comprises at least one end portion (44, 45, 64, 65), the at least one end portion being adjacent to the corresponding inner portion (41, 61) and being spaced apart from the other of the first contact electrode (4) and the second contact electrode (6) by a distance greater than a distance (d) between the inner portions (41, 61) of the first contact electrode (4) and the second contact electrode (6).

2. The resistor arrangement according to claim 1, wherein: The at least one end portion comprises a first end portion (44) and a second end portion (45) of the first contact electrode, The first end portion (44) is arranged between the inner portion (41) and the first longitudinal end (42) of the first contact electrode (4), and The second end portion (45) is arranged between the inner portion (41) and a second longitudinal end (43) of the first contact electrode (4).

3. The resistor arrangement according to claim 2, wherein: The second contact electrode (6) is longer than the first contact electrode (4) in the second direction (y).

4. The resistor arrangement according to claim 3, wherein: The second contact electrode (6) extends in the second direction (y) beyond the first longitudinal end (42) and the second longitudinal end (43) of the first contact electrode (4) by at least 5 micrometers each.

5. The resistor arrangement structure according to claim 2, wherein: The at least one end portion further comprises a first end portion (64) and a second end portion (65) of the second contact electrode (6), The first end portion (64) is arranged between the inner portion (61) and the first longitudinal end (62) of the second contact electrode (6), and The second end portion (65) is arranged between the inner portion (61) and a second longitudinal end (63) of the second contact electrode (6).

6. The resistor arrangement structure according to claim 1, wherein: The first contact electrode (4) comprises an end portion (44) spaced apart from an inner portion (61) of the second contact electrode (6) in the first transverse direction (x), and The second contact electrode (6) comprises an end portion (65) spaced apart from the inner portion (41) of the first contact electrode (4) in the first transverse direction (x).

7. The resistor arrangement according to any one of claims 1 to 6, wherein: The at least one end portion (44, 45, 64, 65) is straight.

8. The resistor arrangement according to any one of claims 1 to 6, wherein: The at least one end portion (44, 45, 64, 65) is curved.

9. The resistor arrangement according to any one of the preceding claims, wherein: The at least one end portion (44, 45, 64, 65) has a length between 3 and 10 microns.

10. The resistor arrangement according to any one of the preceding claims, wherein: The length of the inner portion (41, 61) of each of the first contact electrode (4) and the second contact electrode (6) is at least 10 micrometers, at least 20 micrometers or at least 50 micrometers.

11. The resistor arrangement according to any one of the preceding claims, wherein: The distance (d) between the inner portions (41, 61) of the first contact electrode (4) and the second contact electrode (6) is at least 30 micrometers.

12. The resistor arrangement according to any one of the preceding claims, wherein: The resistance layer (3) comprises doped polysilicon.

13. The resistor arrangement according to any one of the preceding claims, wherein: At least one of the first contact electrode (4) and the second contact electrode (6) comprises metal.

14. The resistor arrangement according to claim 13, wherein: The metal is selected from the group consisting of: Tungsten; titanium; Aluminium; and copper.

15. The resistor arrangement according to any one of the preceding claims, wherein: Each of the first contact electrode (4) and the second contact electrode (6) is arranged in a corresponding groove (504, 506) of an insulating layer (5) formed on top of the resistive layer (3).

16. The resistor arrangement according to claim 15, wherein: The resistance layer (3) is embedded in the insulating layer (5).

17. A transistor device comprising: A gate pad (71) and a gate runner (72) which are spaced apart from each other and are respectively formed above the semiconductor body (100); and The resistor arrangement according to any one of claims 1 to 15, The first contact electrode (4) of the resistor arrangement is connected to the gate pad (71), and the second contact electrode (6) of the resistor arrangement is connected to the gate runner (72).

18. The transistor device according to claim 17, further comprising: A plurality of transistor cells (10), each of the transistor cells comprising an active region formed in the semiconductor body (100), and each of the transistor cells comprising a gate electrode (21), Wherein, the gate electrode (21) of the transistor unit (10) is electrically connected to the gate flow channel (72).

19. The transistor device according to claim 18, wherein: The active area of ​​each transistor unit comprises: A source region (11) of a first doping type; A body region (12) of a second doping type complementary to the first doping type.

20. The transistor device according to claim 19, further comprising: At least one drift region (14) of a first doping type adjoins a body region (12) of at least one transistor cell (10).

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