Four-color perovskite image sensor and manufacturing method thereof

Abstract

A four-color perovskite image sensor comprises a quartz layer, two perovskite p-i-n-i-p assemblies and two optical transparent electrodes. On one side of the quartz layer, a first perovskite p-i-n-i-p assembly is capable of detecting ultraviolet light and blue light and has two photoelectric detection layers for detecting an ultraviolet wavelength interval and a blue wavelength interval. On opposite sides, a second perovskite p-i-n-i-p element is capable of detecting green and red light, having two photodetection layers for detecting a green wavelength interval and a red wavelength interval. And on two sides of the quartz layer, the optical transparent electrodes can jointly apply bias voltage to the two perovskite p-i-n-i-p assemblies.

Description

Technical Field

[0001] The present invention generally relates to perovskite devices, and more particularly to a four-color perovskite image sensor for detecting ultraviolet to visible light and reproducing images through a stacked design. Background Art

[0002] For image sensing detection, birds can experience a more colorful world than humans with their unique eyes. Through four-color photoreceptors, birds can broaden the visible spectrum to ultraviolet light. In practical applications, four-color light sensors have a wide range of application scenarios, especially image sensors with ultraviolet detection capabilities, which can play a key role in space exploration. However, integrating a four-color vision system into a single device remains a major challenge.

[0003] In the image sensor space, there is research and product precedent for merging RGB with additional emerald green or near-infrared light channels for specialized applications such as capturing leaf detail, plant analysis, geographic mapping, and environmental monitoring. However, less work has been done on building UVRGB imaging systems.

[0004] Due to the challenges of process compatibility and device miniaturization, there are not many reports on integrated imaging systems of color perovskites. Among the existing strategies, the way to build multi-color perovskite photodetectors is to adopt parallel and stacked designs. The parallel structure requires a color filter array for monochrome detection, which permanently reduces the quantum efficiency, spatial resolution and color accuracy. In contrast, devices without Bayer filter arrays cannot distinguish mixed light in one pixel. The typical stacking architecture is based on multi-terminal series-connected perovskite units, most of which are separate units, not a whole. Therefore, the cost is increased and the processing complexity is increased, especially for the alignment procedure.

[0005] Therefore, in the current development of perovskite sensors, there is a need to integrate a color perovskite imaging system in a single device. Summary of the invention

[0006] An object of the present invention is to provide methods and devices that address the aforementioned shortcomings and unmet needs of the state of the art.

[0007] In order to overcome the bottleneck, in the technical solution of the present invention, a highly pixelated UVRB all-inorganic perovskite image sensor system with 4×32×32 pixels is proposed, in which CsPbX3 perovskite acts as a photosensitive layer and a metal oxide acts as a charge transport layer. The use of four thermally evaporated perovskite layers can exhibit high crystallinity, low defect density and long carrier lifetime. Careful design of the thickness of each layer through optical simulation can achieve color selectivity of more than 99.5% while maintaining high transmittance. The imager adopts a tandem dual-mode strategy to eliminate external filters and improve optical performance. Importantly, the all-inorganic device can exhibit good stability. The integrated four-color image sensor is able to perform well in a variety of harsh environments, which demonstrates excellent imaging capabilities. This system is considered to have promising potential in off-vehicle detection applications.

[0008] According to a first aspect of the present invention, a four-color perovskite image sensor is provided. The four-color perovskite image sensor comprises a quartz layer, a first perovskite pinip component, a second perovskite pinip component, a first optically transparent electrode, and a second optically transparent electrode. The first perovskite pinip component is disposed on a first side of the quartz layer and is configured to detect ultraviolet light and blue light, wherein the first perovskite pinip component includes two photodetection layers for detecting ultraviolet wavelength ranges and blue wavelength ranges, respectively. The second perovskite pinip component is disposed on a second side of the quartz layer and is configured to detect green light and red light, wherein the second perovskite pinip component includes two photodetection layers for detecting green wavelength ranges and red wavelength ranges, respectively. The first optically transparent electrode is disposed on a first side of the quartz layer. The second optically transparent electrode is disposed on a second side of the quartz layer to apply a bias voltage to the first perovskite pinip component and the second perovskite pinip component together with the first optically transparent electrode.

[0009] According to a second aspect of the present invention, a four-color perovskite image sensor system is provided. The four-color perovskite image sensor system comprises a four-color perovskite image sensor as mentioned above, at least one data collection layer, and a power and communication layer. The data collection layer is configured to capture and process the output signal from the four-color perovskite image sensor and convert the output signal into digital data. The power and communication layer provides power supply and can perform wireless data transmission with an external device to achieve remote control and monitoring, wherein the digital data provided by the data collection layer can be transmitted to the external device by the power and communication layer.

[0010] According to a third aspect of the present invention, a method for manufacturing a four-color perovskite image sensor is provided. The method comprises the following steps: providing quartz with an ITO pattern; forming a first photodetection layer for detecting a blue wavelength range and a second photodetection layer for detecting a green wavelength range on the upper side and the bottom side of the quartz with the ITO pattern, respectively; after forming the first photodetection layer and the second photodetection layer, forming a third photodetection layer for detecting an ultraviolet wavelength range on the upper side of the quartz with the ITO pattern; and, after forming the third photodetection layer, forming a fourth photodetection layer for detecting a red wavelength range on the bottom side of the quartz with the ITO pattern, wherein the first photodetection layer, the second photodetection layer, the third photodetection layer and the fourth photodetection layer are inorganic halide perovskites.

[0011] The device fabrication method adopted can be performed using a fully vacuum process flow. There are at least four features regarding the design of the four-color perovskite image sensor: 1) Optical design of the device: The properties of the four perovskite layers enable the provision of photodetectors for four wavelength ranges in a single device, where the parameters applied include the thickness of the film and the wavelength range; 2) The electrical design of the device: It includes two pinip stacked layers and is presented as a pixelated electrode array; 3) Ability to achieve color distinction and image reproduction; and 4) Reliability to work in harsh environments. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings, in which:

[0013] Figure 1A Depicting an exploded schematic diagram of a four-color perovskite image sensor according to an embodiment of the present invention, the four-color perovskite image sensor being configured to detect ultraviolet to visible light and reproduce an image through a stacked design;

[0014] Figure 1B A manufacturing process diagram of a four-color perovskite image sensor according to an embodiment of the present invention is shown;

[0015] Figure 2A A simulated graph showing the transmittance within the depth of the entire four-color perovskite image sensor;

[0016] Figure 2B , Figure 2C , Figure 2D and Figure 2E They are respectively the simulated curves of transmittance of CsPbCl3, CsPbClBr2, CsPbBr3 and CsPbBrI2 films;

[0017] Figure 3 A graph showing the responsivity of a four-color perovskite image sensor as a function of wavelength according to an embodiment of the present invention;

[0018] Figure 4 A schematic diagram depicting energy level alignment of a four-color perovskite image sensor according to an embodiment of the present invention;

[0019] Figure 5A and Figure 5B A diagram showing the working mechanism of a four-color perovskite image sensor according to an embodiment of the present invention is shown;

[0020] Figure 6 A graph showing the responsivity of a four-color perovskite image sensor according to an embodiment of the present invention as a function of the incident light intensity under 405 nm, 450 nm, 520 nm and 635 nm light sources;

[0021] Fig. 7A , Figure 7B , Figure 7C and Fig.7D A graph showing the response times of the four photodetection layers;

[0022] Figure 8 A graph showing JV characterization of a four-color perovskite image sensor under dark and single-wavelength illumination according to an embodiment of the present invention;

[0023] Fig. 9A Graphs showing the photocurrent response of a mixed light source of 405nm, 450nm, 520nm and 635nm in forward and reverse operating modes;

[0024] Fig. 9B Graphs showing the current density of the device under dark and light conditions;

[0025] Fig. 10A A hybrid light discrimination capability diagram of a four-color perovskite image sensor system is shown, where the tetrahedral light combination is mapped based on 405nm, 450nm, 520nm and 635nm light sources;

[0026] Fig. 10B A ternary light combination map based on 405nm, 450nm, 520nm and 635nm light sources is shown;

[0027] Fig. 10C shows a standard deviation graph for five mappings, indicating the deviation between the actual light combination after calculation and the detected light combination;

[0028] Fig.11A schematic diagram showing a four-color perovskite image sensor system connected to a computer according to an embodiment of the present invention;

[0029] Fig.12 An image showing a four-color perovskite image sensor system, with the inset being a device without readout circuitry; and

[0030] Fig.13A and Fig. 13B It shows photos and captured images of the Earth (I), Neptune (II), Venus (III), Flame (IV) and Crab Nebula (V) under normal pressure, vacuum, low temperature, high temperature and vacuum environments. DETAILED DESCRIPTION

[0031] In the following description, as a preferred example, a four-color perovskite image sensor and a method for manufacturing the same are described. It will be apparent to those skilled in the art that modifications including additions and / or substitutions may be made without departing from the scope and spirit of the invention. Certain details may be omitted so as not to obscure the invention; however, this disclosure is written to enable those skilled in the art to practice the teachings herein without undue experimentation.

[0032] Figure 1AA schematic exploded view of a four-color perovskite image sensor 100 according to some embodiments of the present disclosure is depicted, and the four-color perovskite image sensor is configured to detect ultraviolet to visible light and reproduce an image through a stacked design. The four-color perovskite image sensor 100 includes a thin quartz layer 110 that divides the device structure into two halves, and photodetection layers 120, 130, 140, and 150. The photodetection layers 120 and 130 are disposed on the front side of the thin quartz layer 110 and are used to sense ultraviolet light and blue light to detect short-wavelength light. The photodetection layers 140 and 150 are disposed on the back side of the thin quartz layer 110 and are used to sense green light and red light to sense long-wavelength light. Specifically, for the two halves, each of them includes a pinip perovskite structure (pinip perovskite component). On the front side of the thin quartz layer 110, the optical component has stacked photodetection layers 120 and 130 and is configured to detect ultraviolet light / blue light; and, on the back side of the thin quartz layer 110, the optical component has stacked photodetection layers 140 and 150 and is configured to detect green light / red light. In addition, each pinip configuration includes a wide bandgap perovskite pin diode and a narrow bandgap perovskite nip diode. In one embodiment, the pinip configuration in the four-color perovskite image sensor 100 can be formed using an inorganic halide perovskite. For example, the stacked layers of the four-color perovskite image sensor 100 include a first half: ITO / NiO / CsPbBrl2 / SnO2 / CsPbBr3 / NiO / ITO; a second half: ITO / NiO / CsPbCIBr2 / SnO2 / CsPbCl3 / NiO / ITO; and a quartz layer located between the first half and the second half.

[0033] In one embodiment, the four-color perovskite image sensor 100 is configured as at least a stack of ITO / NiO / CsPbBrI2 / SnO2 / CsPbBr3 / NiO / ITO / quartz / ITO / NiO / CsPbClBr2 / SnO2 / CsPbCl3 / NiO / ITO. Each material acts as a layer in the stack configuration. Each layer directly connects and contacts adjacent layers, thereby forming interfaces between different materials. These interfaces facilitate interactions between materials.

[0034] Figure 1B The manufacturing process of a four-color perovskite image sensor according to some embodiments of the present invention is shown, and the manufacturing process includes steps S10, S12, S14, S16, S18, S20, S22, S24, S26, S28, and S30.

[0035] In step S10, ITO (Indium Tin Oxide) layers 202 and 204 are formed on opposite surfaces of the quartz 200 to form quartz having an ITO pattern (ITO patterned quartz).

[0036] In step S12 , NiO layers 208 and 210 are formed by sputtering NiO on both sides of the structure and in contact with the ITO layers 202 and 204 .

[0037] In steps S14 and S16, photodetection layers 212 and 214 are formed on both sides of the structure and in contact with NiO layers 208 and 210. At this stage, PbX2 and CsX are sequentially deposited on both sides, and then an annealing process is performed. In one embodiment, the annealing temperature of the annealing process is in the range of 250°C to 300°C; for example, at 280°C. The photodetection layers 212 and 214 have different properties, such as having different compositions, so as to be used to sense light of different wavelengths.

[0038] In step S18 , SnO 2 layers 216 and 218 are formed by sputtering SnO 2 on both sides of the structure and in contact with the photodetection layers 212 and 214 .

[0039] In steps S20 and S22, on the upper side of the structure, a photodetection layer 220 is formed and is in contact with the SnO2 layer 218. At this stage, PbCl2 and CsCl are sequentially deposited on the upper side, and then an annealing process is performed. In one embodiment, the annealing temperature of the annealing process is in the range of 250°C to 300°C; for example, at 280°C. The photodetection layers 212, 214, and 220 have different characteristics, such as having different compositions, so as to be used to sense light of different wavelengths.

[0040] In step S24, a NiO electrode 222 and an ITO electrode 224 are formed on the photodetection layer 220 by at least one sputtering process. In one embodiment, the NiO electrode 222 and the ITO electrode 224 are both optically transparent, thus allowing an incident light beam to pass through the NiO electrode 222 and the ITO electrode 224.

[0041] In steps S26 and S28, a photodetection layer 226 is formed on the bottom side of the structure. At this stage, PbI2 and CsBr are sequentially deposited on the bottom side, and then an annealing process is performed. In one embodiment, the annealing temperature of the annealing process is in the range of 250°C to 300°C; for example, at 280°C. The photodetection layers 212, 214, 220, and 226 have different properties, such as having different compositions, so as to sense light of different wavelengths; for example, the photodetection layers 212, 214, 220, and 226 are configured to sense light in the green, blue, ultraviolet, and red wavelength ranges, respectively.

[0042] In step S30, a NiO electrode 228 and an ITO electrode 230 are formed under the photodetection layer 226 by at least one sputtering process. In one embodiment, the NiO electrode 228 and the ITO electrode 230 have an optically transparent property together, thereby allowing an incident light beam to pass through the NiO electrode 228 and the ITO electrode 230. In addition, due to the optically transparent property, the amount of optical reflection on the NiO and ITO electrodes 228 and 230 can be reduced.

[0043] In some embodiments, the photodetection layer 212 is a CsPbBr3 layer, the photodetection layer 214 is a CsPbClBr2 layer, the photodetection layer 220 is a CsPbCl3 layer, and the photodetection layer 226 is a CsPbBrI2 layer.

[0044] Based on theory, in order to estimate the distribution of light intensity and light absorption for the device design of four-color perovskite image sensor, simulated plots of the optical properties of all photodetection layers are provided, such as Figure 2A , which is a simulated graph of transmittance throughout the depth of a four-color perovskite image sensor. The required complex refractive index (n, k) is obtained by UV-visible spectroscopy (UV-vis) and ellipsometry. In addition, Figure 2B , Figure 2C , Figure 2D and Figure 2E Simulated graphs of transmittance for CsPbCl3, CsPbClBr2, CsPbBr3, and CsPbBrI2 thin films, respectively. Accordingly, these graphs provide an optical simulation of the transmittance of the four photoactive perovskite layers as a function of film thickness. Due to the stacked architecture of the sensor, the lower layer requires as much light intensity as possible to achieve high responsivity, thereby forming a viable compromise between color selectivity and device performance in the entire tandem system. In one embodiment, the transmittance should be confirmed to be less than 0.5% over the entire detection range to avoid crosstalk in light discrimination.

[0045] Figure 3 A graph showing the responsivity of a four-color perovskite image sensor according to an embodiment of the present invention as a function of wavelength is shown. The four-color perovskite image sensor of the present invention exhibits a wavelength response range, a relative responsivity to normalized pigment absorbance, and an avian visual system that responds to wavelengths of 300nm to 410nm (ultraviolet wavelength interval), 410nm to 485nm (blue wavelength interval), 485nm to 520nm (green wavelength interval), and 520nm to 650nm (red wavelength interval), the avian visual system acting as a UVRGB color light detector. The different photodetection layers in the four-color perovskite image sensor are configured to detect / sense those wavelength intervals, respectively.

[0046] The device working mechanism and performance characterization are provided below:

[0047] Figure 4 Schematic diagram depicting the energy level alignment of a four-color perovskite image sensor according to an embodiment of the present invention. In order to distinguish four spectral colors, two pinip structures are provided, such as Figure 4 In the illustration, the scene is the energy level alignment without external bias. The four-color perovskite image sensor has various layers / materials, where the lowest unoccupied molecular orbital (LUMO) and the highest occupied molecular orbital (HOMO) of each layer / material are in Figure 4 are listed in the diagram.

[0048] A pinip configuration with SnO2, CsPbCl3, and CsPbClBr2 can be used to detect ultraviolet light and blue light. Another pinip configuration with SnO2, CsPbBr3, and CsPbBrI2 can be used to detect green light and red light. In one embodiment, each pinip configuration comprises a wide bandgap perovskite pin diode (e.g., for sensing ultraviolet light or green light) and a narrow bandgap perovskite nip diode (e.g., for sensing blue light or red light). NiO can act as an electron transport layer (ETL) material and is formed as an electron transport layer. The reason for selecting metal oxides as ETL materials is that the large valence band offset (ΔE) between the perovskite layer and the n-type semiconductor v" and ΔE v# ). This offset acts as a hole barrier, preventing hole injection and electron-hole recombination at the perovskite-ETL interface. ITO can act as an electrode (e.g., an optically transparent electrode) or an electrical contact, so that an external bias source can be connected to the image sensor and a bias can be applied to the four-color perovskite image sensor via ITO.

[0049] When the four-color perovskite image sensor is working or in an image sensing task, a forward or reverse bias can be applied to the two side electrodes (e.g., ITO electrodes) to activate one diode and deactivate the other diode in the pinip configuration to distinguish short-wavelength light signals from long-wavelength light signals. Specifically, in a photodiode-mode photodetector, photogenerated carriers are more likely to separate under reverse bias and recombine under forward bias.

[0050] Figure 5A and Figure 5B FIG. 1 shows a working mechanism diagram of a four-color perovskite image sensor according to an embodiment of the present invention. Figure 5A and Figure 5BIn the illustration of , there are four types of markers: EW is electrons generated in wide bandgap perovskites; HW is holes generated in wide bandgap perovskites; EN is electrons generated in narrow bandgap perovskites; HN is holes generated in narrow bandgap perovskites. The incident surface is the left side, so the incident light propagates to the wide bandgap perovskite and then propagates to the narrow bandgap perovskite.

[0051] like Figure 5A As shown, when a reverse bias is applied to the four-color perovskite image sensor, the NiO / CsPbCl3 (CsPbBr3) / SnO2 diode is under reverse bias, while the SnO2 / CsPbClBr2 (CsPbBrI2) / NiO diode is under forward bias. The photodetection layer (i.e., perovskite layer) of the pin diode acts as a photoactive layer, thereby generating photogenerated carriers. After the electron-hole pairs are separated, the holes are collected at the ITO electrode, while the electrons drift to the interface between the other perovskite layer and the ETL (e.g., NiO layer), where a large number of holes accumulate due to the large valence band offset. Then, the electrons and holes recombine. In contrast, the nip diode acts as a conductive layer, and even if long-wavelength light generates photogenerated carriers, no photocurrent is generated. This is because these carriers cannot be separated and transferred due to the band bending phenomenon under forward bias. In this way, short-wavelength light (i.e., wide band gap) can be detected.

[0052] On the contrary, Figure 5B As shown, when a forward bias is applied, long wavelength light (ie, narrow bandgap) can be detected.

[0053] Figure 5A and Figure 5B The working mechanism of the four-color perovskite image sensor in the figure is relative to the scenes of ultraviolet light and blue light. The same or similar operation can be applied to the scenes of green light and red light.

[0054] Figure 6 A graph showing the responsivity of a four-color perovskite image sensor according to an embodiment of the present invention as a function of the incident light intensity under 405nm, 450nm, 520nm, and 635nm light sources is shown. The optoelectronic properties of the four-color perovskite image sensor were further investigated using four single-wavelength lasers corresponding to UVRGB light at 405nm (UV for ultraviolet), 450nm (B for blue), 520nm (G for green), and 635nm (R for red). Figure 6 As shown, the R value (A / W) ranges from 0.2 μW / cm 2 To ~6mW / cm 2 Function of light intensity. At 0.586μW / cm 2 、0.555μW / cm2 , 0.437μW / cm 2 、0.210μW / cm 2 The maximum R values ​​(values ​​for responsivity) at 405nm, 450nm, 520nm, and 635nm are reported as 0.842, 0.694, 0.606, and 0.518A / W, respectively, at a light intensity of 1.5A / W. Here, it is assumed that the dark current is dominated by shot noise and the dark current is measured under the operating bias.

[0055] Fig. 7A , Figure 7B , Figure 7C and Fig.7D A graph showing the response time of four photodetection layers (ie, photoactive layers), wherein Fig. 7A Indicates the response time of CsPbCl3; Figure 7B Indicates the response time of CsPbClBr2; Figure 7C represents the response time of CsPbBr3; and Fig.7D Indicates the response time of CsPbBrI2. The tests were conducted under 405nm, 450nm, 520nm and 635nm light sources. Photoresponse rise time (τ r ) and fall time (τ f ) is a key parameter for image sensor integration, as its frame rate depends on the response time of these diodes. Fig. 7A , Figure 7B , Figure 7C and Fig.7D As shown in , the response time of all photodetection layers (ie, photoactive layers) ranges from 0.85 to 16.2 ms, which increases with increasing film thickness.

[0056] Figure 8 A graph showing JV characterization of a four-color perovskite image sensor according to an embodiment of the present invention in darkness and single-wavelength illumination. In the figure, a current density-voltage (JV) curve is shown, which shows that the UV / G diode and the B / R diode can be operated under forward bias and reverse bias, respectively. A relatively high light intensity is selected for functional demonstration under the condition that the open circuit voltage (Voc) increases as a logarithmic function of the light intensity. Taking into account the aforementioned mechanism and JV measurement results, in one embodiment, -1.0V and 1.2V are selected as the operating bias to obtain a stable photoresponse current and minimal noise from other photoactive layers.

[0057] Fig. 9A Graph showing the photocurrent response of a mixed light source of 405nm, 450nm, 520nm and 635nm in forward and reverse operating modes. Fig. 9BGraphs showing the current density of the device under dark and light conditions. In order to understand the color selectivity of the four wavelength ranges mentioned previously, additional color discrimination tests were performed, such as Fig. 9A and Fig. 9B The device is shown in the figure. Mixed light sources of UV / B and G / R are used to activate the device at a given bias voltage. It is worth noting that although the current always flows in the opposite direction to the main current, which indicates that few photogenerated charges separate and cross the band-binding barrier, the interference at low current density can be ignored.

[0058] Additionally, additional four-color color discrimination and extreme environment imaging demonstrations are provided.

[0059] Fig. 10A A hybrid light discrimination capability diagram of a four-color perovskite image sensor system is shown, where the four-element light combination mapping is based on 405nm, 450nm, 520nm and 635nm light sources. Fig. 10B A ternary light combination map based on 405nm, 450nm, 520nm and 635nm light sources is shown, and the sensor's ability to distinguish between different light source combinations is highlighted. Fig. 10C A standard deviation graph of five maps is shown, indicating the deviation between the actual light combination after calculation and the detected light combination.

[0060] This biomimetic image sensor allows the reconstruction of a quaternary color space and is used to represent spectral and non-spectral colors. It is worth noting that brightness information is not included in this color space. In order to intuitively understand the device's ability to distinguish and consider the elimination of chromatic aberrations from the light source, 405nm, 450nm, 520nm and 635nm single-wavelength lasers were used as light sources to measure absolute light intensity and relative intensity ratios. The light combination can also be controlled by modulating the light intensity.

[0061] exist Fig. 10A and Fig. 10B In , each pair of black and white scattered points in the 3D quaternary and ternary images is close, indicating that the reconstructed light combination is very similar to the original light ratio. The change between the actual value and the detected value is also evaluated, such as Fig. 10C The results show that the deviation is larger for four light sources compared to three light sources, and larger for R / G diodes compared to U / V diodes. This phenomenon may be caused by light intensity calibration and significant scattering and reflection when light passes through multilayer interfaces.

[0062] Fig.11 A schematic diagram showing a four-color perovskite image sensor system connected to a computer according to an embodiment of the present invention. Fig.12An image showing a four-color perovskite image sensor system, where the inset is a device without a readout circuit. To demonstrate the imaging capabilities of the four-color perovskite image sensor under various extreme conditions, a 4×32×32 pixel image sensor system (pixel line width of 100μm, pixel pitch of 400μm) was fabricated, which integrated on-chip readout circuits, temperature sensors, and pressure sensors.

[0063] The four-color perovskite image sensor system includes a four-color perovskite image sensor, a data collection layer, and a power and communication layer for communicating with an external machine (e.g., a computer) via a wireless channel. The four-color perovskite image sensor has a configuration as described above. The data collection layer is responsible for capturing and processing the output signal from the image sensor, converting the output signal into digital data for further analysis. The power and communication layer provides power supply to other components of the system and facilitates wireless data transmission to external devices, thereby realizing remote control and monitoring. For example, the digital data provided by the data collection layer can be transmitted to an external device by the power and communication layer.

[0064] Fig.13A and Fig. 13B Photos and captured images of the Earth (I), Neptune (II), Venus (III), flames (IV), and the Crab Nebula (V) at normal pressure, vacuum, low temperature, high temperature, and vacuum environments are shown. It is worth noting that a fuel stove was used to ignite the flame, and a projector was used to project other images. The calculated output image for flame detection is from the UV channel, while the other images are from the RGB channels. The system was tested in vacuum, low temperature, and high temperature environments, and images of the Earth, Neptune, and Venus from the National Aeronautics and Space Administration (NASA) were used to simulate the space environment. In addition, images of the Crab Nebula provided by NASA were used as a control target in the surrounding environment. Since UV sources are scarce in daily life, the image sensor was placed above the fuel stove so that the fuel stove can emit UV radiation in a high temperature environment. The UV, B, G, and R channels can be displayed separately to evaluate the image quality of each channel.

[0065] As discussed above, the device fabrication can be performed using an all-vacuum process. The four photoactive materials used can be all-inorganic. The electron transport layer (ETL) and hole transport layer (HTL) used in the device are also inorganic. In terms of the optical design of the device, the optical properties of all layers are simulated and appropriate film thicknesses are selected for detecting four wavelength ranges. This enables the imager to distinguish mixed light from ultraviolet to visible light. Therefore, perovskite materials are used to achieve four-color detection and image reproduction. In addition, functional integration of perovskite color imaging systems is provided, demonstrating its ability to operate in harsh environments.

[0066] The functional units and modules of the apparatus and methods according to the embodiments disclosed herein can be implemented using a computing device, a computer processor or an electronic circuit system, including but not limited to an application specific integrated circuit (ASIC), a field programmable gate array (FPGA), a microcontroller, and other programmable logic devices configured or programmed according to the teachings of the present disclosure. The computer instructions or software codes running in the computing device, computer processor or programmable logic device can be easily made by practitioners in the field of software or electronic technology based on the teachings of the present disclosure.

[0067] All or part of the method according to the embodiment may be executed in one or more computing devices including a server computer, a personal computer, a laptop computer, a mobile computing device (eg, a smart phone), and a tablet computer.

[0068] Embodiments may include computer storage media, transient and non-transitory memory devices having stored therein computer instructions or software codes that may be used to program or configure a computing device, a computer processor, or an electronic circuit system to perform any of the processes of the present invention. Storage media, transient and non-transitory memory devices may include, but are not limited to, floppy disks, optical disks, Blu-ray disks, DVDs, CD-ROMs and magneto-optical disks, ROMs, RAMs, flash memory devices, or any type of medium or device suitable for storing instructions, codes, and / or data.

[0069] Each of the functional units and modules according to various embodiments may also be implemented in a distributed computing environment and / or a cloud computing environment, where all or part of the machine instructions are executed in a distributed manner by one or more processing devices interconnected by a communication network such as an intranet, a wide area network (WAN), a local area network (LAN), the Internet, and other forms of data transmission media.

[0070] The foregoing description of the present invention has been provided for the purpose of illustration and description. It is not intended to be exhaustive or to limit the invention to the precise form disclosed. Many modifications and variations will be apparent to those skilled in the art.

[0071] The embodiments were chosen and described in order to best explain the principles of the invention and its practical application, thereby enabling others skilled in the art to understand the invention for various embodiments and with various modifications as are suited to the particular use contemplated.

Claims

1. A four-color perovskite image sensor, characterized in that: include: Quartz layer; a first perovskite pinip component disposed on the first side of the quartz layer and configured to detect ultraviolet light and blue light, wherein the first perovskite pinip component comprises two photodetection layers for detecting ultraviolet wavelength range and blue wavelength range, respectively; a second perovskite pinip component disposed on the second side of the quartz layer and configured to detect green light and red light, wherein the second perovskite pinip component comprises two photodetection layers for detecting green wavelength range and red wavelength range, respectively; a first optically transparent electrode disposed on said first side of said quartz layer; as well as A second optically transparent electrode is disposed on the second side of the quartz layer to apply a bias voltage to the first and second perovskite pinip components together with the first optically transparent electrode.

2. The four-color perovskite image sensor according to claim 1, characterized in that: In the first perovskite pinip component, the photodetection layer for the ultraviolet wavelength range is a CsPbCl3 layer, and the photodetection layer for the blue wavelength range is a CsPbClBr2 layer.

3. The four-color perovskite image sensor according to claim 2, characterized in that: In the second perovskite pinip component, the photodetection layer for the green wavelength range is a CsPbBr3 layer, and the photodetection layer for the red wavelength range is a CsPbBrI2 layer.

4. The four-color perovskite image sensor according to claim 3, characterized in that: It further includes an ITO layer, a NiO layer and a SnO2 layer to form a stacked configuration consisting of ITO / NiO / CsPbBrI2 / SnO2 / CsPbBr3 / NiO / ITO / quartz / ITO / NiO / CsPbClBr2 / SnO2 / CsPbCl3 / NiO / ITO.

5. The four-color perovskite image sensor according to claim 4, characterized in that: In the stacked configuration, each material layer contacts an adjacent layer to form a material interface.

6. The four-color perovskite image sensor according to claim 3, characterized in that: The ultraviolet wavelength range spans at least 300nm to 410nm, the blue wavelength range spans at least 410nm to 485nm, the green wavelength range spans at least 485nm to 520nm, and the red wavelength range spans at least 520nm to 650nm.

7. The four-color perovskite image sensor according to claim 1, characterized in that: The first perovskite pinip component includes a CsPbCl3 layer, a CsPbClBr2 layer, a first NiO layer, a second NiO layer and a SnO2 layer, wherein the first NiO layer, the CsPbCl3 layer and the SnO2 layer together form a NiO / CsPbCl3 / SnO2 diode, and wherein the SnO2 layer, the CsPbClBr2 layer and the second NiO layer together form a SnO2 / CsPbClBr2 / NiO diode.

8. The four-color perovskite image sensor according to claim 1, characterized in that: The second perovskite pinip component includes a CsPbBr3 layer, a CsPbBrI2 layer, a first NiO layer, a second NiO layer and a SnO2 layer, wherein the first NiO layer, the CsPbBr3 layer and the SnO2 layer together form a NiO / CsPbBr3 / SnO2 diode, and wherein the SnO2 layer, the CsPbBrI2 layer and the second NiO layer together form a SnO2 / CsPbBrI2 / NiO diode.

9. A four-color perovskite image sensor system, characterized in that: include: The four-color perovskite image sensor according to claim 1; at least one data collection layer configured to capture and process output signals from the four-color perovskite image sensor and convert the output signals into digital data; as well as A power and communication layer provides power supply and is used for wireless data transmission to external devices to achieve remote control and monitoring, wherein the digital data provided by the data collection layer is transmitted to the external device by the power and communication layer.

10. A method for manufacturing a four-color perovskite image sensor, characterized in that: include: Providing quartz with an ITO pattern; Forming a first photodetection layer for detecting a blue wavelength range and a second photodetection layer for detecting a green wavelength range on the upper side and the bottom side of the quartz having the ITO pattern, respectively; After forming the first photodetection layer and the second photodetection layer, forming a third photodetection layer for detecting ultraviolet wavelength range on the upper side of the quartz having the ITO pattern; as well as After forming the third photodetection layer, a fourth photodetection layer for detecting a red wavelength range is formed on the bottom side of the quartz having the ITO pattern, wherein the first photodetection layer, the second photodetection layer, the third photodetection layer and the fourth photodetection layer are inorganic halide perovskites.

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