Display panel, manufacturing method and display device

Abstract

The present application is applicable to the field of display technology, and provides a display panel, a manufacturing method and a display device, wherein the display panel includes a substrate, a pixel group and a photoelectric sensor device, the pixel group includes at least one sub-pixel, and the photoelectric sensor device includes a first electrode, a photoelectric effect layer and a second electrode stacked in sequence in a direction away from the substrate, the second electrode forms a plurality of first protrusions on a side away from the substrate, and a first resonant cavity is formed between the second electrode and the first electrode, and the first resonant cavity has a resonant wavelength. The present application sets a first protrusion on the surface of the first electrode, so that the first resonant cavity formed between the first electrode and the second electrode has a resonant wavelength, and selects the light entering the photoelectric sensor device through the first resonant cavity, which can reduce crosstalk and improve photoelectric conversion efficiency and perception sensitivity.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display panel, a manufacturing method and a display device. Background Art

[0002] At present, integrating optical photoelectric sensing modules into display panels is a new trend in the development of display technology. Optical photoelectric sensing modules can realize a series of applications such as fingerprint recognition and image scanning.

[0003] Optical photoelectric sensing requires high perception sensitivity and high photoelectric conversion efficiency. The integration of optical photoelectric sensing modules in display panels still needs to be improved. Summary of the invention

[0004] The purpose of the embodiments of the present application is to provide a display panel, aiming to provide a solution with high photoelectric conversion efficiency.

[0005] The embodiment of the present application is implemented as follows: a display panel includes

[0006] substrate;

[0007] A pixel group and a photoelectric sensor device are arranged on one side of the substrate;

[0008] Wherein, the pixel group includes at least one sub-pixel, and the photoelectric sensor device includes a first electrode, a photoelectric effect layer, and a second electrode stacked in sequence in a direction away from the substrate;

[0009] A plurality of first protrusions are formed on the second electrode on a side away from the substrate. A first resonant cavity is formed between the second electrode and the first electrode. The first resonant cavity has a first resonant wavelength.

[0010] In one embodiment, the pixel group includes a first sub-pixel, the photoelectric sensor device includes a first device, the first device is adjacent to the first sub-pixel, the first sub-pixel includes a third electrode, a light-emitting material layer and a fourth electrode stacked in sequence in a direction away from the substrate, and a surface of the third electrode away from the substrate is provided with a plurality of second protrusions;

[0011] Preferably, in the first sub-pixel, a second resonant cavity is formed between the third electrode and the fourth electrode, and the second resonant wavelength of the second resonant cavity is n1 ’ ×λ1 / 2,n1 ’ is a natural number;

[0012] Preferably, the first resonant wavelength of the first resonant cavity of the first device is n1×λ1 / 2, wherein n1 is a natural number, and λ1 is the wavelength of light corresponding to the first sub-pixel; preferably, n1=n1 ’ .

[0013] In one embodiment, on the first device, the height of the first protrusion is 40nm to 60nm;

[0014] Preferably, the outer diameter of the first protrusion is 40nm to 60nm;

[0015] Preferably, the period of the first protrusions is 300nm-500nm.

[0016] In one embodiment, the pixel group further includes a second sub-pixel and a third sub-pixel, and the photoelectric sensor device further includes a second device and a third device;

[0017] The second device is arranged between the second sub-pixel and an adjacent sub-pixel of another color; the first resonant wavelength of the first resonant cavity of the second device is n2×λ2 / 2, wherein n2 is a natural number, and λ2 is the wavelength of light corresponding to the second sub-pixel;

[0018] The third device is arranged between the third sub-pixel and an adjacent sub-pixel of another color; the first resonant wavelength of the first resonant cavity of the third device is n3×λ3 / 2, wherein n3 is a natural number, and λ3 is the wavelength of light corresponding to the third sub-pixel;

[0019] Preferably, the first sub-pixel is a green sub-pixel, the second sub-pixel is a red sub-pixel, and the third sub-pixel is a blue sub-pixel.

[0020] In one embodiment, the second sub-pixel and the third sub-pixel each include a third electrode, a light-emitting material layer, and a fourth electrode stacked in sequence; in the second sub-pixel and the third sub-pixel, each of the third electrodes is provided with a plurality of second protrusions arranged at intervals, and a second resonant cavity is formed between each of the third electrodes and the corresponding fourth electrode;

[0021] On the second sub-pixel, the second resonant wavelength of the second resonant cavity is n2 ’ ×λ2 / 2,n2 ’ is a natural number;

[0022] Preferably, n2=n2′;

[0023] In the third sub-pixel, the second resonance wavelength of the second resonance cavity is n3 ’ ×λ3 / 2,n3 ’ is a natural number;

[0024] Preferably, n3=n3';

[0025] Preferably, the first protrusion on the first device and the second protrusion on the first sub-pixel are equal in height, outer diameter and period;

[0026] The first protrusion on the second device and the second protrusion on the second sub-pixel are equal in height, outer diameter and period;

[0027] The first protrusion on the third device and the second protrusion on the third sub-pixel are equal in height, outer diameter and period.

[0028] In one embodiment, on the second device, the height of the first protrusion is 40nm to 60nm;

[0029] Preferably, the outer diameter of the first protrusion is 60nm to 80nm;

[0030] Preferably, the period of the first protrusions is 400nm to 600nm;

[0031] On the third device, the height of the first protrusion is 40nm to 60nm;

[0032] Preferably, the outer diameter of the first protrusion is 40nm to 60nm;

[0033] Preferably, the period of the first protrusions is 180nm to 280nm;

[0034] Preferably, the first protrusions on the first component, the second component and the third component are all of equal height.

[0035] In one embodiment, the first electrode is a reflective electrode, and the second electrode is a transmissive electrode.

[0036] In one embodiment, the photoelectric sensor device further comprises a first pattern layer, the first pattern layer is arranged on a side of the first electrode away from the second electrode, a plurality of spaced convex patterns are arranged on a side of the first pattern layer away from the substrate, and the first electrode is arranged on the first pattern layer to form the first convexity;

[0037] Preferably, the sub-pixels each include a second pattern layer, a third electrode, a light-emitting material layer and a fourth electrode stacked in sequence in a direction away from the substrate, a plurality of spaced protrusion patterns are provided on the side of the second pattern layer away from the substrate, and the third electrode is provided on the second pattern layer to form a second protrusion.

[0038] Another object of the embodiment of the present application is to provide a method for manufacturing a display panel, which includes:

[0039] A first electrode and a third electrode are formed on one side of the substrate and arranged side by side, respectively, and a surface of the first electrode facing away from the substrate has a plurality of first protrusions arranged at intervals;

[0040] forming a photoelectric effect layer on a surface of the first electrode facing away from the substrate, and forming a light-emitting material layer on a surface of the third electrode facing away from the substrate; and

[0041] A second electrode is formed on a side of the photoelectric effect layer facing away from the substrate, and a fourth electrode is formed on a side of the light emitting material layer facing away from the substrate.

[0042] In one embodiment, the step of forming the first protrusion includes:

[0043] A pattern layer is formed on one side of the substrate by embossing, wherein a plurality of spaced convex patterns are provided on a side of the pattern layer away from the substrate;

[0044] The first electrode is formed on the side of the pattern layer away from the substrate by evaporation, and the first protrusion is formed on a portion of the first electrode covering the protrusion pattern.

[0045] Another object of the embodiments of the present application is to provide a display device, which includes the display panel mentioned in the above embodiments, or includes a display panel manufactured by the manufacturing method of the display panel mentioned in the above embodiments.

[0046] The display panel, manufacturing method and display device provided by the embodiments of the present application have the following beneficial effects:

[0047] The display panel provided in the embodiment of the present application includes a substrate, a pixel group and a photoelectric sensor device, the pixel group includes at least one sub-pixel, and the photoelectric sensor device includes a first electrode, a photoelectric effect layer and a second electrode stacked in sequence in a direction away from the substrate. The second electrode forms a plurality of first protrusions on a side away from the substrate, so that a first resonant cavity formed between the first electrode and the second electrode has a first resonant wavelength. The light entering the photoelectric sensor device is selected through the first resonant cavity, thereby reducing crosstalk and improving photoelectric conversion efficiency and perception sensitivity. BRIEF DESCRIPTION OF THE DRAWINGS

[0048] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0049] Figure 1 is a schematic diagram of the structure of a display panel provided in an embodiment of the present application;

[0050] Figure 2 is a schematic diagram of the structure of an optical photoelectric sensor module in a display panel provided in an embodiment of the present application;

[0051] Figure 3 This is a schematic diagram of a first structure of a first device in an optical photoelectric sensor module in a display panel provided in an embodiment of the present application;

[0052] Figure 4 yes Figure 3 A schematic side structural diagram of a first electrode of the first device shown;

[0053] Figure 5 yes Figure 3 A schematic top view of the structure of a first electrode of the first device;

[0054] Figure 6 is a spectrum diagram of the first device in the optical photoelectric sensor module in the display panel provided in an embodiment of the present application;

[0055] Figure 7 This is a schematic diagram of a second structure of the first device in the optical photoelectric sensor module in the display panel provided in an embodiment of the present application;

[0056] Figure 8 is a schematic structural diagram of a first sub-pixel in an optical photoelectric sensor module in a display panel provided in an embodiment of the present application;

[0057] Fig. 9 yes Figure 8 A schematic structural diagram of the third electrode in the first sub-pixel is shown;

[0058] Fig.10 is a schematic diagram of the structure of an optical photoelectric sensor module in a display panel provided in an embodiment of the present application;

[0059] Fig.11 is a schematic structural diagram of a second device and a third device in an optical photoelectric sensor module in a display panel provided in an embodiment of the present application;

[0060] Fig.12 is a schematic structural diagram of a second sub-pixel and a third sub-pixel in an optical photoelectric sensing module in a display panel provided in an embodiment of the present application;

[0061] Fig.13 is a flow chart of a method for manufacturing a display panel provided in an embodiment of the present application;

[0062] Fig.14 It is a flow chart of step S1 in the method for manufacturing a display panel provided in an embodiment of the present application.

[0063] The meanings of the marks in the figure are:

[0064] 100-optical photoelectric sensor module;

[0065] 11-sub-pixel, 10-second resonant cavity, 12-third electrode, 121-second protrusion, 19-light-emitting material layer, 13-hole injection layer, 14-hole transport layer, 15-organic emission layer, 16-electron transport layer, 17-electron injection layer, 18-fourth electrode;

[0066] 11R-second sub-pixel, 11G-first sub-pixel, 11B-third sub-pixel;

[0067] 2-photoelectric sensor device, 20-first resonant cavity, 21-first device, 22-second device, 23-third device;

[0068] 24-first electrode, 241-first protrusion, 25-photoelectric effect layer, 26-second electrode;

[0069] 27-filling layer;

[0070] 28-pattern layer, 281-raised pattern;

[0071] 200 - display panel, 90 - substrate, 901 - underlay, 902 - driving circuit layer, 903 - retaining wall. DETAILED DESCRIPTION

[0072] In order to make the purpose, technical solution and advantages of the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0073] It should be noted that when a component is referred to as being "fixed to" or "disposed on" another component, it may be directly or indirectly fixed or disposed on the other component. When a component is referred to as being "connected to" another component, it may be directly or indirectly connected to the other component. The orientation or positional relationship indicated by the terms "upper", "lower", "left", "right", etc. is based on the orientation or positional relationship shown in the accompanying drawings and is only for the convenience of description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as a limitation of this patent. The terms "first" and "second" are only used for the convenience of description and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features. "Multiple" means two or more, unless otherwise clearly and specifically defined.

[0074] In order to illustrate the technical solution described in this application, a detailed description is given below in conjunction with specific drawings and embodiments.

[0075] The application fields of optical photoelectric sensing modules include but are not limited to fingerprint recognition and image scanning.

[0076] In fingerprint recognition applications, the photoelectric sensor device is equivalent to a sub-pixel, embedded in the original pixel structure. The light emitted by the original pixel structure is reflected by the human finger and then incident on the photoelectric sensor device. Usually, one of the multiple sub-pixels is used as the light source for photoelectric sensing detection, while the other colors of light emitted by other sub-pixels are stray light for the photoelectric sensor device. Therefore, in fingerprint recognition applications, it is necessary to reduce the interference of light from other sub-pixels on the photoelectric sensor device.

[0077] In image scanning applications, the light emitted by multiple sub-pixels is used as the light source for photoelectric sensing detection. Light of each wavelength range is reflected by the object and then incident on the photoelectric sensor device. In order to be able to identify light of each wavelength range, the photoelectric sensor device is usually a full-band sensor device. The problem is that the sensitivity of each band is low.

[0078] See also Figure 1 As shown, an embodiment of the present application provides a display panel 200 , which includes a substrate 90 , and a plurality of optical photoelectric sensor modules 100 disposed on one side of the substrate 90 .

[0079] The substrate 90 includes a substrate 901 and a driving circuit layer 902 disposed on one side of the substrate 901. Each sub-pixel 11 and each photoelectric sensor device 2 of the optical photoelectric sensing module 100 is disposed on a side of the driving circuit layer 902 away from the substrate 901 and is electrically connected to the driving circuit layer 902.

[0080] See also Figure 2 As shown, the optical photoelectric sensing module 100 includes a pixel group and a photoelectric sensing device 2, and the pixel group includes at least one sub-pixel 11; see Figure 3 As shown, the photoelectric sensor device 2 includes a first electrode 24, a photoelectric effect layer 25 and a second electrode 26 which are stacked in sequence; the first electrode 24 is a reflective electrode, and the second electrode 26 is a transmissive electrode.

[0081] Among them, Figure 3 , Figure 4 and Figure 5 As shown, a plurality of first protrusions 241 are provided on the surface of the first electrode 24 facing the second electrode 26, so that a first resonant cavity 20 is formed between the second electrode 26 and the first electrode 24, and the first resonant cavity 20 has a resonant wavelength, which is defined as a first resonant wavelength. The determining factors of the first resonant wavelength of the first resonant cavity 20 include: the optical thickness of the photoelectric effect layer 25, the phase delay caused by the second electrode 26, and the phase delay caused by the first electrode 24 and its first protrusions 241.

[0082] Therefore, when the optical thickness of the photoelectric effect layer 25 is constant and the phase delay caused by the second electrode 26 is constant, the first resonance wavelength of the first resonant cavity 20 can be changed by changing the height, outer diameter, period, etc. of the first protrusion 241.

[0083] like Figure 2 As shown, the light emitted by the sub-pixel 11 is reflected by the object and propagates toward the photoelectric sensor device 2. Among them, the light of the band corresponding to the first resonant wavelength can pass through the first electrode 24 and resonate in the first resonant cavity 20, and then be absorbed by the photoelectric effect layer 25 to achieve photoelectric conversion. Light of other bands is suppressed and cannot enter the photoelectric sensor device 2. In this way, the purity of the light entering the photoelectric sensor device 2 can be improved, the crosstalk of light of other bands can be reduced, the photoelectric conversion efficiency can be improved, and the perception sensitivity can be improved.

[0084] In the optical photoelectric sensing module 100 provided in the embodiment of the present application, the first electrode 24 of the photoelectric sensing device 2 is a reflective electrode, and the reflective electrode is provided with a plurality of first protrusions 241, so that the first resonant cavity 20 formed between the first electrode 24 and the second electrode 26 has a specific first resonant wavelength. The light entering the photoelectric sensing device 2 is selected through the first resonant cavity 20, and the crosstalk of the light in the undesired wavelength band to the photoelectric sensing device 2 is reduced, thereby improving the photoelectric conversion efficiency and the perception sensitivity.

[0085] In one embodiment, see Figure 2 As shown, the pixel group includes a plurality of sub-pixels 11, and the light emitted by the plurality of sub-pixels 11 is suitable to meet the requirements of picture display. Among them, the pixel group includes at least a first sub-pixel 11G, a second sub-pixel 11R and a third sub-pixel 11B.

[0086] Optionally, the first sub-pixel 11G may be a green sub-pixel, the second sub-pixel 11 may be a red sub-pixel, and the third sub-pixel 11B may be a blue sub-pixel. In other optional embodiments, the first sub-pixel 11G, the second sub-pixel 11R and the third sub-pixel 11B may correspond to other colors respectively.

[0087] See also Figure 2 and Figure 3 As shown, in one embodiment, the optical photoelectric sensor module 100 includes a photoelectric sensor device 2, and the first resonance wavelength of the first resonant cavity 20 corresponds to the wavelength of green light, red light or blue light, which is defined as the first device 21, which is determined according to actual application requirements. Thus, the optical photoelectric sensor module 100 is selective to light of a specific wavelength.

[0088] In one embodiment, the first resonant wavelength of the first resonant cavity 20 corresponds to the wavelength of green light. Specifically, the first resonant wavelength of the first resonant cavity 20 of the first device 21 is n1×λ1 / 2, where n1 is a natural number and λ1 is the wavelength of green light.

[0089] Optionally, at this time, the first device 21 is disposed adjacent to the first sub-pixel 11G. That is, the first device 21 is located between the first sub-pixel 11G and an adjacent sub-pixel 11 of another color, so as to ensure that the first device 21 is closer to the first sub-pixel 11G, thereby ensuring that more green light emitted by the first sub-pixel 11G can enter the first device 21, which is also conducive to improving the perception sensitivity.

[0090] It is noted here that the “sub-pixels 11 of other colors” mentioned above and below are based on the same pixel group. For the first sub-pixel 11G, the second sub-pixel 11R and the third sub-pixel 11B are sub-pixels 11 of other colors. Conversely, for the second sub-pixel 11R, the first sub-pixel 11G and the third sub-pixel 11B are sub-pixels 11 of other colors. For the third sub-pixel 11B, the first sub-pixel 11G and the second sub-pixel 11R are sub-pixels 11 of other colors.

[0091] For example, see Figure 2 As shown, assuming that the arrangement order of the multiple sub-pixels 11 in the pixel group is the second sub-pixel 11R, the first sub-pixel 11G and the third sub-pixel 11B, the first device 21 can be arranged between the second sub-pixel 11R and the first sub-pixel 11G, or between the first sub-pixel 11G and the third sub-pixel 11B.

[0092] In this embodiment, the optical photoelectric sensor module 100 can be applied to fingerprint recognition, earprint recognition, facial recognition, etc. Green light can be distinguished from infrared light emitted by the human body, which is conducive to biometric recognition.

[0093] In other optional examples, the first device 21 may also be configured to be adjacent to the second sub-pixel 11R and have a resonance wavelength corresponding to the red light wavelength; or, the first device 21 may also be configured to be adjacent to the third sub-pixel 11B and have a resonance wavelength corresponding to the blue light wavelength.

[0094] For an example, see Figure 4 As shown, on the first electrode 24 of the first device 21, the height H of the first protrusion 241 is 40nm-60nm; optionally, the outer diameter D of the first protrusion 241 is 40nm-60nm; optionally, the period T of the first protrusion 241 is 300nm-500nm.

[0095] The height direction refers to the direction perpendicularly pointing from the first electrode 24 to the second electrode 26 .

[0096] See also Figure 6 As shown, the comparative example is the spectral performance of the photoelectric sensor device without the first protrusion 241. It can be seen that the relative spectral intensity of green light of the first device 21 provided in the embodiment of the present application is set to 1, which is much higher than the relative spectral intensity of red light 0.14 and the relative spectral intensity of blue light 0.4. Thus, the wavelength selection of green light is achieved.

[0097] The outer peripheral surface shape of the first protrusion 241 may be unlimited, and the outer diameter size of the first protrusion 241 of different shapes may have different definitions. Figure 5 As shown, the first protrusion 241 is cylindrical, and its outer diameter is its outer diameter; for another example, the first protrusion 241 is a quadrangular prism, and its outer diameter is the diameter of the circumscribed circle of the quadrangular prism; for another example, the first protrusion 241 is a triangular prism, and its outer diameter is also the diameter of the circumscribed circle of the triangular prism. For other regular or irregular shapes of the first protrusion 241, the outer diameter can also be the diameter of its circumscribed circle.

[0098] In an optional embodiment, the first protrusion 241 is cylindrical.

[0099] In an optional embodiment, the first protrusion 241 is in the shape of a square column.

[0100] See also Figure 8 As shown, in one embodiment, in a pixel group, each sub-pixel 11 includes a third electrode 12, a light-emitting material layer 19 and a fourth electrode 18 stacked in sequence, and the fourth electrode 18 is a light-transmitting conductive layer; the third electrode 12 and the first electrode 24 are in the same layer and can be formed by the same photomask process, that is, the third electrode 12 and the first electrode 24 can be made of the same material.

[0101] The third electrode 12 and the first electrode 24 may be made of materials with high reflectivity and high conductivity, such as silver.

[0102] Optionally, the fourth electrode 18 and the second electrode 26 are in the same layer and can be formed by the same photomask process, that is, the fourth electrode 18 and the second electrode 26 can be made of the same material.

[0103] The fourth electrode 18 and the second electrode 26 may be made of transparent conductive materials such as indium tin oxide, indium zinc oxide, and indium gallium zinc oxide.

[0104] The third electrode 12 may be an anode, and the fourth electrode 18 may be a cathode.

[0105] Please refer to Figure 8As shown, the light-emitting material layer 19 of each sub-pixel 11 includes a hole injection layer 13 arranged on the side of the third electrode 12 facing away from the substrate 90, a hole transport layer 14 arranged on the side of the hole injection layer 13 facing away from the substrate 90, an organic emission layer 15 arranged on the side of the hole transport layer 14 facing away from the substrate 90, an electron transport layer 16 arranged on the side of the organic emission layer 15 facing away from the substrate 90, and an electron injection layer 17 arranged on the side of the electron transport layer 16 facing away from the substrate 90.

[0106] The organic emission layer 15 is configured with different organic light-emitting materials according to different sub-pixels 11. The organic emission layer 15 of the third sub-pixel 11B may include a light-emitting material that emits blue light, the organic emission layer 15 of the first sub-pixel 11G may include a light-emitting material that emits green light, and the organic emission layer 15 of the second sub-pixel 11R may include a light-emitting material that emits red light.

[0107] In one embodiment, see Figure 8 and Fig. 9 As shown, in the first sub-pixel 11G, a plurality of second protrusions 121 are provided at intervals on the side of the third electrode 12 facing away from the substrate 90, and a second resonant cavity 10 is formed between the third electrode 12 and the fourth electrode 18, wherein the second resonant wavelength of the second resonant cavity 10 corresponds to the wavelength of green light.

[0108] The purpose of such a configuration is that in the first sub-pixel 11G, the second resonant cavity 10 is used to further select and enhance the green light, reduce the half-peak width of the green light, and improve the purity of the green light. Furthermore, when the green light is reflected onto the first device 21, it can have a higher photoelectric conversion efficiency.

[0109] Specifically, in one embodiment, in the first sub-pixel 11G, the second resonant wavelength of the second resonant cavity 10 is n1′×λ1 / 2, where n1′ is a natural number.

[0110] In an optional example, n1=n1′. That is, at this time, the second resonant cavity 10 in the first sub-pixel 11G has the same resonant wavelength as the first resonant cavity 20 of the first device 21 .

[0111] In one embodiment, see Fig. 9 As shown, in the first sub-pixel 11G, the height H' of the second protrusion 121 is 40nm-60nm; optionally, the outer diameter D' of the second protrusion 121 is 40nm-60nm; optionally, the period T' of the second protrusion 121 is 300nm-500nm.

[0112] The definition of the outer peripheral surface shape and the outer diameter D′ of the second protrusion 121 may refer to the aforementioned first protrusion 241 .

[0113] In an optional example, the second protrusion 121 in the first sub-pixel 11G is equal to the first protrusion 241 of the first device 21 in height, outer diameter and period.

[0114] The purpose of such arrangement is that the second protrusion 121 in the first sub-pixel 11G is completely identical to the first protrusion 241 of the first device 21, which is conducive to forming the first protrusion 241 and the second protrusion 121 simultaneously by the same method, and is conducive to simplifying the production steps.

[0115] In one embodiment, see Figure 3 and Figure 7 As shown, the photoelectric sensor device 2 further includes a filling layer 27 which is disposed between the first electrode 24 and the photoelectric effect layer 25 and at least partially fills the periphery of the first protrusion 241 so that the photoelectric effect layer 25 can be formed on a flat surface. This is beneficial to the fabrication of the photoelectric effect layer 25.

[0116] The material of the filling layer 27 is not limited.

[0117] In one embodiment, the filling layer 27 may be an organic photoresist material.

[0118] In one embodiment, the filling layer 27 may be a hole injection material, or include a hole injection material and a hole transport material stacked together.

[0119] In one embodiment, see Figure 3 As shown, the height of the filling layer 27 can be greater than the height of the first protrusions 241, so that a portion of the filling layer 27 is filled between the first protrusions 241, and another portion covers the first protrusions 241. Alternatively, see Figure 7 As shown, the height of the filling layer 27 may be equal to the height of the first protrusion 241 , so that the filling layer 27 is exactly flush with the first protrusion 241 .

[0120] See also Figure 3 and Figure 7 As shown, in one embodiment, the photoelectric sensor device 2 further includes a pattern layer 28, which is disposed on the side of the first electrode 24 away from the second electrode 26. The pattern layer 28 is provided with a plurality of spaced convex patterns 281, and the first electrode 24 is disposed on the side of the pattern layer 28 away from the substrate 90 to form a first convexity 241.

[0121] Optionally, the pattern layer 28 may be disposed in the sub-pixel 11 at the same time, for example, disposed in the first sub-pixel 11G, on the side of the third electrode 12 away from the fourth electrode 18. That is, the pattern layer 28 may include a first pattern layer disposed in the photoelectric sensor device 2 and a second pattern layer disposed in the sub-pixel 11. The third electrode 12 is disposed on the side of the second pattern layer of the pattern layer 28 away from the substrate 90 to form a second protrusion 121.

[0122] In other words, the pattern layer 28 can be used as a template layer under the first electrode 24 and the third electrode 12 to form the first protrusion 241 of the first electrode 24 and the second protrusion 121 of the third electrode 12. For example, a silver material layer is formed on the surface of the pattern layer 28 by evaporation, and the silver material layer is consistent with the surface of the pattern layer 28, so that each first protrusion 241 and each second protrusion 121 can be obtained.

[0123] The pattern layer 28 may be a non-conductive structure to avoid forming an electrical connection with the first electrode 24 and the third electrode 12 and affecting the impedance of the first electrode 24 and the third electrode 12. For example, the pattern layer 28 may be a non-conductive organic material layer or an inorganic material layer.

[0124] More specifically, the pattern layer 28 may be an organic photoresist material.

[0125] The method for forming the protrusion pattern 281 of the pattern layer 28 is not limited.

[0126] In one embodiment, the protruding pattern 281 of the pattern layer 28 is formed by laser etching.

[0127] In one embodiment, the raised pattern 281 of the pattern layer 28 is formed by embossing.

[0128] Next, see Fig.10 As shown, in one embodiment, in the optical photoelectric sensing module 100, the number of photoelectric sensing devices 2 is equal to the number of sub-pixels 11, that is, there is a one-to-one correspondence between the photoelectric sensing devices 2 and the sub-pixels 11. At this time, each photoelectric sensing device 2 has a first resonant wavelength corresponding to a sub-pixel 11 of a color, and is used to select light of a wavelength band respectively.

[0129] like Fig.10 As shown, the photoelectric sensor device 2 includes a first device 21, a second device 22 and a third device 23. Among them, the first resonant cavity 20 of the first device 21 is configured to have a first resonant wavelength corresponding to green light. At this time, the configuration of the first device 21 and the first sub-pixel 11G can be referred to the above embodiment, and will not be repeated here, but the second device 22 and the third device 23 will continue to be introduced.

[0130] In one embodiment, see Fig.11 As shown, the first resonant wavelength of the first resonant cavity 20 of the second device 22 is n2×λ2 / 2, where n2 is a natural number and λ2 is the wavelength of red light.

[0131] On the second device 22 , a height H of the first protrusion 241 is 40 nm to 60 nm; optionally, an outer diameter D of the first protrusion 241 is 60 nm to 80 nm; optionally, a period T of the first protrusion 241 is 400 nm to 600 nm.

[0132] See also Fig.11 As shown, the first resonance wavelength of the first resonance cavity 20 of the third device 23 is n3×λ3 / 2, wherein n3 is a natural number, and λ3 is the wavelength of blue light.

[0133] On the third device 23 , a height H of the first protrusion 241 is 40 nm to 60 nm; optionally, an outer diameter D of the first protrusion 241 is 40 nm to 60 nm; optionally, a period T of the first protrusion 241 is 180 nm to 280 nm.

[0134] In an optional embodiment, the heights of the first protrusions 241 on the first component 21 , the second component 22 , and the third component 23 are all equal.

[0135] That is to say, by changing the outer diameter D and period T of the first protrusion 241, the first device 21, the second device 22 and the third device 23 can be obtained respectively. The purpose of such a setting is to simplify the manufacturing steps of the first device 21, the second device 22 and the third device 23, and at the same time, it is also helpful to reduce the height difference between the first device 21, the second device 22 and the third device 23, and even the heights of the first device 21 to the third device 23 can be exactly the same.

[0136] In an alternative embodiment, see Fig.10 As shown, the second device 22 is disposed between the second sub-pixel 11R and an adjacent sub-pixel 11 of another color, for example, between the second sub-pixel 11R and the first sub-pixel 11G; the third device 23 is disposed between the third sub-pixel 11B and an adjacent sub-pixel 11 of another color, for example, between the third sub-pixel 11B and the second sub-pixel 11R. Similarly, this can also ensure that the distance between the second device 22 and the second sub-pixel 11R is the shortest, and the distance between the third device 23 and the third sub-pixel 11B is the shortest.

[0137] See also Fig.12 As shown, in one example, in the second sub-pixel 11R, the third electrode 12 is provided with a plurality of second protrusions 121 arranged at intervals, so that the second resonant cavity 10 formed between the third electrode 12 and the fourth electrode 18 of the second sub-pixel 11R has a second resonant wavelength corresponding to red light.

[0138] Specifically, in the second sub-pixel 11R, the second resonant wavelength of the second resonant cavity 10 is n2′×λ2 / 2, where n 2’ is a natural number.

[0139] In an optional example, n2=n2′. That is, at this time, the second resonant cavity 10 in the second sub-pixel 11R has the same resonant wavelength as the first resonant cavity 20 of the second device 22 .

[0140] In one embodiment, in the second sub-pixel 11R, a height H of the first protrusion 241 is 40 nm to 60 nm; optionally, an outer diameter D of the first protrusion 241 is 60 nm to 80 nm; optionally, a period T of the first protrusion 241 is 400 nm to 600 nm.

[0141] In an optional example, the second protrusion 121 in the second sub-pixel 11R is equal to the first protrusion 241 of the second device 22 in height, outer diameter and period.

[0142] The purpose of such arrangement is that the second protrusion 121 in the second sub-pixel 11R is completely identical to the first protrusion 241 of the second device 22, which is conducive to forming the first protrusion 241 and the second protrusion 121 simultaneously by the same method, and is conducive to simplifying the production steps.

[0143] See also Fig.12 As shown, in one embodiment, in the third sub-pixel 11B, the third electrode 12 is provided with a plurality of second protrusions 121 spaced apart from each other, so that the second resonant cavity 10 formed between the third electrode 12 and the fourth electrode 18 of the third sub-pixel 11B has a second resonant wavelength corresponding to blue light.

[0144] Specifically, in the third sub-pixel 11B, the second resonance wavelength of the second resonance cavity 10 is n3′×λ3 / 2, where n3′ is a natural number.

[0145] In an optional example, n3=n3′. That is, at this time, the second resonant cavity 10 in the third sub-pixel 11B has the same resonant wavelength as the first resonant cavity 20 of the third device 23 .

[0146] In one embodiment, in the third sub-pixel 11B, a height H of the second protrusion 121 is 40 nm to 60 nm; optionally, an outer diameter D of the second protrusion 121 is 40 nm to 60 nm; optionally, a period T of the second protrusion 121 is 300 nm to 500 nm.

[0147] In an optional example, the second protrusion 121 in the third sub-pixel 11B is equal to the first protrusion 241 of the third device 23 in height, outer diameter and period.

[0148] The purpose of such arrangement is that the second protrusion 121 in the third sub-pixel 11B is completely identical to the first protrusion 241 of the third device 23, which is conducive to forming the first protrusion 241 and the second protrusion 121 simultaneously by the same method, and is conducive to simplifying the production steps.

[0149] In one embodiment, see Fig.11 and Fig.12 As shown, the first pattern layer of the pattern layer 28 and the protruding pattern 281 thereof are also correspondingly disposed in the second device 22 and the third device 23, and are both located on the side of the first electrode 24 away from the second electrode 26. Optionally, the second pattern layer of the pattern layer 28 and the protruding pattern 281 thereof are also correspondingly disposed in the second sub-pixel 11R and the third sub-pixel 11B, and are located on the side of the third electrode 12 away from the fourth electrode 18, so as to form a second protrusion 121.

[0150] In other optional embodiments, the third electrode 12 in the second sub-pixel 11R and the third sub-pixel 11B may be a planarized electrode layer, and the above-mentioned second protrusion 121 does not need to be designed.

[0151] In an alternative embodiment, see Figure 1 As shown, in the optical photoelectric sensing module 100, in the photoelectric sensing device 2, a retaining wall 903 is provided between the sub-pixel 11 and the photoelectric sensing device 2, which can further reduce the crosstalk effect of the sub-pixels 11 of other colors on the photoelectric sensing device 2, which is beneficial to further improve the perception sensitivity of the optical photoelectric sensing module 100.

[0152] See also Fig.13 As shown, the embodiment of the present application further provides a method for manufacturing a display panel 200, including:

[0153] Step S1, forming a first electrode 24 and a third electrode 12 on one side of a substrate 90, respectively, wherein a surface of the first electrode 24 facing away from the substrate 90 has a plurality of first protrusions 241 arranged at intervals;

[0154] Step S2, forming a photoelectric effect layer 25 on a surface of the first electrode 24 facing away from the substrate 90, and forming a light emitting material layer 19 on a surface of the third electrode 12 facing away from the substrate 90; and

[0155] Step S3 , forming a second electrode 26 on a side of the photoelectric effect layer 25 facing away from the substrate 90 , and forming a fourth electrode 18 on a side of the light emitting material layer 19 facing away from the substrate 90 .

[0156] See also Fig.14 As shown, in one embodiment, step S1 specifically includes:

[0157] Step S11, forming a pattern layer 28 on one side of the substrate 90 by embossing, wherein a plurality of spaced convex patterns 281 are provided on a side of the pattern layer 28 facing away from the substrate 90;

[0158] Step S12 , forming the first electrode 24 on the side of the pattern layer 28 facing away from the substrate 90 by evaporation, and the portion of the first electrode 24 covering the convex pattern 281 forms the first convexity 241 .

[0159] More specifically, in step S2, on the substrate 90 (see Figure 1 A layer of organic photoresist material is deposited on one side of the substrate (shown in the figure), and an imprint template (not shown) is provided. The imprint template is provided with a plurality of concave patterns, and the concave patterns of the imprint template are pressed against the surface of the organic photoresist material. After the organic photoresist material is cured, a pattern layer 28 having a convex pattern 281 can be obtained.

[0160] Finally, an embodiment of the present application further provides a display device, which includes the display panel 200 mentioned in the above embodiment.

[0161] The above description is only a preferred embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims

1. A display panel, characterized in that: include: substrate; A pixel group and a photoelectric sensor device are arranged on one side of the substrate; Wherein, the pixel group includes at least one sub-pixel, and the photoelectric sensor device includes a first electrode, a photoelectric effect layer, and a second electrode stacked in sequence in a direction away from the substrate; A plurality of first protrusions are formed on the second electrode on a side away from the substrate. A first resonant cavity is formed between the second electrode and the first electrode. The first resonant cavity has a first resonant wavelength.

2. The display panel according to claim 1, wherein: The pixel group includes a first sub-pixel, the photoelectric sensor device includes a first device, the first device is adjacent to the first sub-pixel, the first sub-pixel includes a third electrode, a light-emitting material layer and a fourth electrode stacked in sequence in a direction away from the substrate, and a surface of the third electrode away from the substrate is provided with a plurality of second protrusions; Preferably, in the first sub-pixel, a second resonant cavity is formed between the third electrode and the fourth electrode, and the second resonant wavelength of the second resonant cavity is n1 ’ ×λ1 / 2,n1 ’ is a natural number; Preferably, the first resonant wavelength of the first resonant cavity of the first device is n1×λ1 / 2, wherein n1 is a natural number, and λ1 is the wavelength of light corresponding to the first sub-pixel; Preferably, n1=n1 ’ .

3. The display panel according to claim 2, wherein: On the first device, the height of the first protrusion is 40nm to 60nm; Preferably, the outer diameter of the first protrusion is 40nm to 60nm; Preferably, the period of the first protrusions is 300nm-500nm.

4. The display panel according to claim 2, wherein: The pixel group further includes a second sub-pixel and a third sub-pixel, and the photoelectric sensor device further includes a second device and a third device; The second device is arranged between the second sub-pixel and an adjacent sub-pixel of another color; the first resonant wavelength of the first resonant cavity of the second device is n2×λ2 / 2, wherein n2 is a natural number, and λ2 is the wavelength of light corresponding to the second sub-pixel; The third device is arranged between the third sub-pixel and an adjacent sub-pixel of another color; the first resonant wavelength of the first resonant cavity of the third device is n3×λ3 / 2, wherein n3 is a natural number, and λ3 is the wavelength of light corresponding to the third sub-pixel; Preferably, the first sub-pixel is a green sub-pixel, the second sub-pixel is a red sub-pixel, and the third sub-pixel is a blue sub-pixel.

5. The display panel according to claim 4, wherein: The second sub-pixel and the third sub-pixel each include a third electrode, a light-emitting material layer and a fourth electrode stacked in sequence; in the second sub-pixel and the third sub-pixel, each of the third electrodes is provided with a plurality of second protrusions arranged at intervals, and a second resonant cavity is formed between each of the third electrodes and the corresponding fourth electrode; On the second sub-pixel, the second resonant wavelength of the second resonant cavity is n2 ’ ×λ2 / 2,n2 ’ is a natural number; Preferably, n2=n2′; In the third sub-pixel, the second resonance wavelength of the second resonance cavity is n3 ’ ×λ3 / 2,n3 ’ is a natural number; Preferably, n3=n3'; Preferably, the first protrusion on the first device and the second protrusion on the first sub-pixel are equal in height, outer diameter and period; The first protrusion on the second device and the second protrusion on the second sub-pixel are equal in height, outer diameter and period; The first protrusion on the third device and the second protrusion on the third sub-pixel are equal in height, outer diameter and period.

6. The display panel according to claim 4, wherein: On the second device, the height of the first protrusion is 40nm to 60nm; Preferably, the outer diameter of the first protrusion is 60nm to 80nm; Preferably, the period of the first protrusions is 400nm to 600nm; On the third device, the height of the first protrusion is 40nm to 60nm; Preferably, the outer diameter of the first protrusion is 40nm to 60nm; Preferably, the period of the first protrusions is 180nm to 280nm; Preferably, the first protrusions on the first component, the second component and the third component are all of equal height.

7. The display panel according to any one of claims 1 to 6, characterized in that: The first electrode is a reflective electrode, and the second electrode is a transmissive electrode.

8. The display panel according to any one of claims 1 to 6, characterized in that: The photoelectric sensor device further includes a first pattern layer, the first pattern layer is arranged on a side of the first electrode away from the second electrode, a plurality of spaced convex patterns are arranged on a side of the first pattern layer away from the substrate, and the first electrode is arranged on the first pattern layer to form the first convexity; Preferably, the sub-pixels each include a second pattern layer, a third electrode, a light-emitting material layer and a fourth electrode stacked in sequence in a direction away from the substrate, a plurality of spaced protrusion patterns are provided on the side of the second pattern layer away from the substrate, and the third electrode is provided on the second pattern layer to form a second protrusion.

9. A method for manufacturing a display panel, characterized in that: include: A first electrode and a third electrode are formed on one side of the substrate and arranged side by side, respectively, and a surface of the first electrode facing away from the substrate has a plurality of first protrusions arranged at intervals; Forming a photoelectric effect layer on a surface of the first electrode facing away from the substrate, and forming a light-emitting material layer on a surface of the third electrode facing away from the substrate; as well as A second electrode is formed on a side of the photoelectric effect layer facing away from the substrate, and a fourth electrode is formed on a side of the light emitting material layer facing away from the substrate.

10. The method for manufacturing a display panel according to claim 9, wherein: The step of forming the first protrusion comprises: A pattern layer is formed on one side of the substrate by embossing, wherein a plurality of spaced convex patterns are provided on a side of the pattern layer away from the substrate; The first electrode is formed on the side of the pattern layer away from the substrate by evaporation, and the first protrusion is formed on a portion of the first electrode covering the protrusion pattern.

11. A display device, characterized in that: A display panel comprising the display panel as claimed in any one of claims 1 to 8, or a display panel manufactured by the method for manufacturing a display panel as claimed in claim 9 or 10.

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