Component for plasma processing apparatus, method for manufacturing component for plasma processing apparatus, and plasma processing apparatus

Abstract

Provided is a technique for reducing resistance and suppressing the generation of particles in a member for a plasma processing apparatus. A member for a plasma processing apparatus includes a conductive base material, a plurality of conductive protrusions protruding from a surface of the conductive base material and electrically connected to each other via the conductive base material, and a Si-containing coating layer. The Si-containing coating layer is formed on the surface of the conductive substrate and the surfaces of the plurality of conductive protrusions such that a part of each of the plurality of conductive protrusions is exposed.

Description

Technical Field

[0001] Exemplary embodiments of the present disclosure relate to a component for a plasma processing apparatus, a method of manufacturing the component for a plasma processing apparatus, and a plasma processing apparatus. Background Art

[0002] As a technique for producing a CVD-SiC self-supporting structure by forming a CVD-SiC film on a substrate and then removing the substrate, there is a technique described in Patent Document 1.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2001-158666. Summary of the invention

[0006] Problem that the invention aims to solve

[0007] The present disclosure provides a technology for reducing the electrical resistance and suppressing the generation of particles in a component for a plasma processing apparatus.

[0008] Technical means of solving problems

[0009] A component for a plasma processing device according to an exemplary embodiment of the present disclosure includes a conductive substrate, a plurality of conductive protrusions, and a Si-containing coating, wherein the plurality of conductive protrusions protrude from a surface of the conductive substrate and are electrically connected to each other via the conductive substrate, and the Si-containing coating is formed on the surface of the conductive substrate and the surface of the plurality of conductive protrusions in such a manner that a portion of each of the plurality of conductive protrusions is exposed.

[0010] Effects of the Invention

[0011] According to an exemplary embodiment of the present disclosure, it is possible to provide a technology for reducing electrical resistance and suppressing generation of particles in a component for a plasma processing apparatus. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a diagram for explaining a structural example of components used in a plasma processing apparatus.

[0013] Figure 2 This is a flowchart showing a first example of a method for manufacturing a component.

[0014] Figure 3 It is a diagram for explaining the structure of a component in each process of the first example of the component manufacturing method.

[0015] Figure 4 is a flow chart showing an example of a process for configuring a coating layer.

[0016] Figure 5 This is a diagram showing an example of a member in which both the tip and the side surface of each conductive protrusion are exposed.

[0017] Figure 6 This is a flowchart showing a second example of the component manufacturing method.

[0018] Figure 7 It is a diagram for explaining the structure of a component in each process of the second example of the component manufacturing method.

[0019] Figure 8 This is a diagram showing an example of a component in which a plurality of conductive protrusions and a conductive base material are integrally formed.

[0020] Fig. 9 This is a flowchart showing a third example of the component manufacturing method.

[0021] Fig.10 It is a diagram for explaining the structure of a component in each process of the third example of the component manufacturing method.

[0022] Fig.11 is a flow chart showing an example of a process for configuring a coating layer.

[0023] Fig.12 FIG. 1 is a diagram showing an example of a plasma processing apparatus according to an exemplary embodiment.

[0024] Fig.13 is a partially enlarged cross-sectional view of a plasma processing apparatus according to an exemplary embodiment.

[0025] Fig.14A It is a diagram showing a first arrangement example of the conductive protrusions or protrusions of a component on the upper surface of the ceiling plate of the second chamber.

[0026] Fig. 14B It is a diagram showing a second arrangement example of the conductive protrusions or protrusions of the component on the upper surface of the ceiling plate of the second chamber.

[0027] Fig. 14C It is a diagram showing a third arrangement example of the conductive protrusions or protrusions of the component on the upper surface of the ceiling plate of the second chamber.

[0028] Fig.14D It is a diagram showing a fourth arrangement example of the conductive protrusions or protrusions of the component on the upper surface of the ceiling plate of the second chamber.

[0029] Fig.15A It is a diagram showing a conductive protrusion or a first arrangement example of the protrusion of the component at the bottom of the second cavity.

[0030] Fig. 15B It is a diagram showing a second arrangement example of the conductive protrusion or protrusions of the component at the bottom of the second cavity.

[0031] Fig. 15C It is a diagram showing a third arrangement example of the conductive protrusion or protrusions of the component at the bottom of the second cavity.

[0032] Fig.15D It is a diagram showing a fourth arrangement example of the conductive protrusion or protrusions of the component at the bottom of the second cavity.

[0033] Fig.16 This is a diagram for explaining an example of the structure of a component when the component is applied to the second cavity.

[0034] Fig.17 This is a diagram for explaining an example of the structure of a plasma processing apparatus in which the component is applied to the second chamber.

[0035] Fig.18 This is a diagram for explaining an example of the structure of a plasma processing apparatus in which the component is applied to the second chamber. DETAILED DESCRIPTION

[0036] The following describes each embodiment of the present disclosure.

[0037] In an exemplary embodiment, a component for a plasma processing device is provided, comprising: a conductive substrate; a plurality of conductive protrusions protruding from a surface of the conductive substrate, and the plurality of conductive protrusions being electrically connected to each other via the conductive substrate; and a Si-containing coating formed on a surface of the conductive substrate and on a surface of the plurality of conductive protrusions in such a manner that a portion of each of the plurality of conductive protrusions is exposed.

[0038] In one exemplary embodiment, the conductive substrate is formed of a first material, the plurality of conductive protrusions are formed of a second material different from the first material, and the plurality of conductive protrusions each extend into the conductive substrate.

[0039] In one exemplary embodiment, the first material comprises carbon and the second material comprises a metal.

[0040] In one exemplary embodiment, the second material includes tungsten or molybdenum.

[0041] In one exemplary embodiment, the plurality of conductive protrusions are integrally formed with the conductive substrate.

[0042] In one exemplary embodiment, the conductive substrate and the plurality of conductive protrusions are formed of tungsten or molybdenum.

[0043] In an exemplary embodiment, the Si-containing coating is formed of Si, SiC, Si3N4, or SiO2.

[0044] In one exemplary embodiment, at least one of the plurality of conductive protrusions has an exposed front end and a non-exposed side surface.

[0045] In one exemplary embodiment, at least one of the plurality of conductive protrusions has an exposed front end and side surfaces.

[0046] In an exemplary embodiment, a method for manufacturing a component for a plasma processing device is provided, comprising: a process of providing a conductive substrate formed of a first material; a process of configuring a plurality of conductive protrusions on a surface of the conductive substrate, wherein the plurality of conductive protrusions are formed of a second material different from the first material and are electrically connected to each other via the conductive substrate; and a process of forming a Si-containing coating on the surface of the conductive substrate and the surfaces of the plurality of conductive protrusions by CVD in a manner such that a portion of each of the plurality of conductive protrusions is exposed.

[0047] In the manufacturing method according to an exemplary embodiment, the first material includes carbon, and the second material includes metal.

[0048] In one exemplary embodiment, the second material includes tungsten or molybdenum.

[0049] In an exemplary embodiment, the Si-containing coating is formed of Si, SiC, Si3N4, or SiO2.

[0050] In an exemplary embodiment, a method for manufacturing a component for a plasma processing device is provided, comprising: a process of providing a conductive substrate formed of a first material; a process of forming a Si-containing coating on the surface of the conductive substrate by CVD; and a process of mounting a plurality of conductive protrusions on the conductive substrate, wherein the plurality of conductive protrusions are formed of a second material different from the first material and are electrically connected to each other via the conductive substrate, and a portion of each of the plurality of conductive protrusions is exposed from the Si-containing coating.

[0051] In the manufacturing method according to an exemplary embodiment, the first material includes carbon, and the second material includes metal.

[0052] In one exemplary embodiment, the second material includes tungsten or molybdenum.

[0053] In an exemplary embodiment, the Si-containing coating is formed of Si, SiC, Si3N4, or SiO2.

[0054] In an exemplary embodiment, a method for manufacturing a component for a plasma processing device is provided, comprising: a process of providing a conductive substrate having a plurality of protrusions, wherein the conductive substrate is formed of tungsten or molybdenum; and a process of forming a Si-containing coating on the surface of the conductive substrate by CVD in a manner such that a portion of each of the plurality of protrusions is exposed.

[0055] In the manufacturing method of an exemplary embodiment, the Si-containing coating layer is formed of Si, SiC, Si 3 N 4 or SiO 2 .

[0056] In an exemplary embodiment, a plasma processing apparatus is provided, comprising: an outer chamber; a substrate support portion disposed in the outer chamber; a lower conductive component disposed around the substrate support portion and connected to a ground potential; an upper conductive component disposed above the substrate support portion and connected to the ground potential; an inner chamber disposed in the outer chamber and defining a processing space for processing a substrate on the substrate support portion; and an RF power supply configured to supply an RF signal to the substrate support portion in order to generate plasma in the processing space, the inner chamber comprising: a conductive chamber base; at least one upper conductive protrusion extending from the conductive chamber base; protruding from the upper surface of the material; at least one lower conductive protrusion, which protrudes from the lower surface of the conductive chamber substrate and is electrically connected to the at least one upper conductive protrusion via the conductive chamber substrate; and a Si-containing coating formed on the surfaces of the conductive chamber substrate, the at least one upper conductive protrusion and the at least one lower conductive protrusion in a manner that the at least one upper conductive protrusion and the at least one lower conductive protrusion each have an exposed portion, the exposed portion of the at least one upper conductive protrusion is in contact with the upper conductive component, and the exposed portion of the at least one lower conductive protrusion is in contact with the lower conductive component.

[0057] Hereinafter, various embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. In addition, the same reference numerals are used for the same or identical elements in the various drawings, and repeated descriptions are omitted. Unless otherwise specified, the positional relationships such as up, down, left, and right are described based on the positional relationships shown in the drawings. The dimensional ratios in the drawings do not represent the actual ratios, and the actual ratios are not limited to the ratios shown in the drawings.

[0058] <An example of a component for a plasma processing apparatus>

[0059] Figure 1 1 is a diagram for explaining a structural example of a component 1 for a plasma processing apparatus. In one embodiment, the component 1 includes a conductive substrate 10 , a plurality of conductive protrusions 11 , and a coating layer 12 .

[0060] In one embodiment, the conductive substrate 10 is formed of a first material that is a conductor. The first material can be carbon.

[0061] In one embodiment, a plurality of conductive protrusions 11 are arranged on the surface of a conductive substrate 10. The plurality of conductive protrusions 11 are electrically connected to each other via the conductive substrate 10. A first portion of each conductive protrusion 11 is arranged in the conductive substrate 10, and a second portion of each conductive protrusion 11 protrudes from the conductive substrate 10. In one embodiment, each conductive protrusion 11 extends into the conductive substrate 10. In one embodiment, a first portion of each conductive protrusion 11 is buried in the conductive substrate 10. In one embodiment, a first portion of each conductive protrusion 11 is arranged in a recess formed in the conductive substrate 10. In one embodiment, the plurality of conductive protrusions 11 are formed of a second material that is a conductor. In one embodiment, the second material is different from the first material. The second material can be a metal. The second material can be tungsten or molybdenum. The resistance of the second material can be lower than that of the first material. The plasma resistance of the second material can be higher than that of the first material. The hardness of the second material can be higher than that of the first material.

[0062] In one embodiment, the coating layer 12 is disposed (formed) on the surface of the conductive substrate 10 and the surfaces of the plurality of conductive protrusions 11. In one embodiment, the coating layer 12 is disposed so that the conductive substrate 10 is not exposed and a portion of each conductive protrusion 11 is exposed. In one embodiment, each conductive protrusion 11 has a front end 11a that is not covered by the coating layer 12 and is exposed, and a side surface 11b that is covered by the coating layer 12 and is not exposed.

[0063] The coating 12 includes a Si-containing material. That is, the coating 12 is a Si-containing coating. The Si-containing material may include Si, SiC, Si3N4 or SiO2. The coating 12 can be formed by CVD (Chemical Vapor Deposition). The coating 12 may be a SiC film (CVD-SiC film) formed by CVD. In one embodiment, the plasma resistance of the coating 12 is higher than that of the conductive substrate 10. In one embodiment, the electrical resistance of the conductive substrate 10 and the conductive protrusion 11 may be lower than that of the coating 12.

[0064] <First Example of Method for Manufacturing Component 1>

[0065] Figure 2 1 is a flowchart showing a first example of a method for manufacturing a component 1. In one embodiment, the method for manufacturing a component 1 includes: a step of providing a conductive substrate 10 (ST1); a step of disposing a plurality of conductive protrusions 11 on a surface of the conductive substrate 10 (ST2); and a step of disposing (forming) a coating layer 12 on the surface of the conductive substrate 10 and the surfaces of the plurality of conductive protrusions 11 in a manner that a portion of each conductive protrusion 11 is exposed (ST3). Figure 3 The diagrams are for explaining the structure of the component 1 in each step of the method for manufacturing the component 1 .

[0066] In step ST1 of one embodiment, Figure 3 As shown in (a) of FIG. 1 , a conductive substrate 10 is prepared. The conductive substrate 10 may be formed into a predetermined shape that becomes the outer shape of the component 1 .

[0067] In step ST2 of one embodiment, Figure 3 As shown in (b), a plurality of conductive protrusions 11 are embedded in the surface of the conductive substrate 10. In one embodiment, a plurality of holes and grooves may be formed in the conductive substrate 10, and the conductive protrusions 11 may be embedded in these holes and grooves. The conductive substrate 10 and the conductive protrusions 11 may be electrically connected to each other by a connecting mechanism such as a screw or an adhesive. The first portion of each conductive protrusion 11 is disposed in the conductive substrate 10, and the second portion of each conductive protrusion 11 protrudes from the conductive substrate 10. The plurality of conductive protrusions 11 are electrically connected to each other via the conductive substrate 10.

[0068] In one embodiment, if Figure 4 As shown, step ST3 may include a step of forming the coating layer 12 on the surfaces of the conductive substrate 10 and the conductive protrusions 11 ( ST31 ) and a step of exposing a portion of each conductive protrusion 11 ( ST32 ).

[0069] In step ST31 of one embodiment, Figure 3 As shown in (c), the coating layer 12 is formed on the entire surface of the conductive base material 10 and the conductive protrusions 11 by CVD.

[0070] In step ST32 of one embodiment, Figure 3 As shown in (d), a portion of the coating 12 is scraped off, and a portion of each conductive protrusion 11 is exposed. At this time, a portion of each conductive protrusion 11 may also be scraped off. The coating 12 and each conductive protrusion 11 may be scraped so that the upper surface is the same plane. Each conductive protrusion 11 may have an exposed front end 11a and a non-exposed side 11b.

[0071] In one embodiment, step ST32 may also be performed as follows Figure 5 As shown, a portion of the coating 12 is cut off, and the front end 11a and the side 11b of each conductive protrusion 11 are exposed. At this time, each conductive protrusion 11 does not need to be cut off. Thus, the exposed portion of the conductive protrusion 11 can be made into a three-dimensional shape such as a convex shape. In addition, the portion of the conductive protrusion 11 corresponding to the portion where the coating 12 is removed can be covered in advance with a material that makes the coating 12 easy to peel off.

[0072] <Second Example of Method for Manufacturing Component 1>

[0073] In the above-described method of manufacturing the component 1 , the coating layer 12 may be disposed before the plurality of conductive protrusions 11 are disposed on the surface of the conductive substrate 10 . Figure 6 This is a flowchart showing a second example of the method for manufacturing the component 1 . Figure 7 It is a diagram for explaining the structure of the component 1 in each process of the second example of the manufacturing method of the component 1. The manufacturing method of the component 1 includes: a process of providing a conductive substrate 10 (ST1a); a process of arranging (forming) a coating layer 12 on the surface of the conductive substrate 10 (ST2a); and a process of arranging (mounting) a plurality of conductive protrusions 11 on the surface of the conductive substrate 10 (ST3a).

[0074] In step ST1a of one embodiment, Figure 7 As shown in (a) of FIG. 1 , a conductive substrate 10 is prepared.

[0075] Next, in step ST2a of one embodiment, as Figure 7 As shown in (b), a coating layer 12 is disposed on the surface of a conductive substrate 10 by CVD.

[0076] Next, in process ST3a of one embodiment, as Figure 7 As shown in (c), a plurality of conductive protrusions 11 are embedded in the surface of the conductive substrate 10. In one embodiment, a plurality of holes and grooves may be formed in the coating 12 and the conductive substrate 10, and the conductive protrusions 11 may be embedded in these holes and grooves. The conductive substrate 10 and the conductive protrusions 11 may be electrically connected to each other by a connecting mechanism such as a screw or an adhesive. A first portion of each conductive protrusion 11 may be disposed in the conductive substrate 10, and a second portion of each conductive protrusion 11 may protrude from the conductive substrate 10. The plurality of conductive protrusions 11 are electrically connected to each other via the conductive substrate 10. As a result, the coating 12 is disposed on the surface of the conductive substrate 10 and the surface of the plurality of conductive protrusions 11 in such a manner that a portion of each conductive protrusion 11 is exposed.

[0077] In the component 1 , the plurality of conductive protrusions 11 may be integrally formed with the conductive base material 10 . Figure 8 1 is a diagram showing an example of a component in which a plurality of conductive protrusions and a conductive substrate are integrally formed. In one embodiment, the component 1 includes a conductive substrate 10 having a plurality of protrusions (conductive protrusions) 10a and a coating 12. The plurality of protrusions 10a protrude from the body of the conductive substrate 10. The plurality of protrusions 10a and the conductive substrate 10 may be formed of tungsten or molybdenum.

[0078] <Third Example of Method for Manufacturing Component 1>

[0079] Fig. 91 is a flowchart showing a third example of a method for manufacturing a component 1. In one embodiment, the method for manufacturing a component 1 includes: a step (ST1b) of providing a conductive substrate 10 having a plurality of protrusions 10a; and a step (ST2b) of configuring (forming) a coating layer 12 on a surface of the conductive substrate 10 by CVD in a manner that a portion of each protrusion 10a is exposed. Fig.10 These are diagrams for explaining the structure of the component 1 in each step of the third example of the method for manufacturing the component 1 .

[0080] In step ST1b of one embodiment, Fig.10 As shown in (a) of FIG. 1 , a conductive substrate 10 having a plurality of protrusions 10 a is prepared.

[0081] In one embodiment, if Fig.11 As shown, step ST2b may include a step of forming the coating layer 12 on the surface of the conductive substrate 10 (ST2b1) and a step of exposing a portion of each protrusion 10a (ST2b2).

[0082] In step ST2b1 of one embodiment, Fig.10 As shown in (b), a coating layer 12 is formed on the entire surface of the conductive substrate 10 including the plurality of protrusions 10a by CVD.

[0083] In step ST2b2 of one embodiment, Fig.10 As shown in (c), a portion of the coating 12 is scraped off and a portion of each protrusion 10a is exposed. At this time, a portion of each protrusion 10a may also be scraped off. The coating 12 and each protrusion 10a may be scraped so that the upper surface is the same plane. Each protrusion 10a may have an exposed front end 10b and a non-exposed side 10c. In addition, both the front end 10b and the side 10c of each protrusion 10a may be exposed.

[0084] <An example of plasma processing apparatus 50>

[0085] The plasma processing device using component 1 can be a capacitively coupled plasma (CCP; Capacitively Coupled Plasma) device, an inductively coupled plasma (ICP; Inductively Coupled Plasma) device, an ECR plasma (Electron-Cyclotron-resonance plasma) device, a helicon wave excited plasma (HWP: Helicon Wave Plasma) device, or a surface wave plasma (SWP: Surface Wave Plasma) device, etc. Fig.12 FIG. 1 is a diagram showing an example of a plasma processing apparatus 50 using the component 1 according to an exemplary embodiment. Fig.13 FIG. 5 is a partially enlarged cross-sectional view of a plasma processing device 50 according to an exemplary embodiment. In one embodiment, the plasma processing device 50 is a capacitively coupled plasma processing device. In one embodiment, as shown in FIG. Fig.12 As shown, the plasma processing apparatus 50 includes a first chamber 100 , a second chamber 200 , and a substrate supporting portion 300 .

[0086] In one embodiment, the first chamber 100 provides an inner space. The first chamber 100 is formed of a metal conductor such as aluminum. The first chamber 100 is electrically grounded. The first chamber 100 is an example of an outer chamber.

[0087] In one embodiment, the first chamber 100 includes a side wall 100s, an upper portion 100u, and a bottom portion 100f. The side wall 100s may have a substantially cylindrical shape. The central axis of the side wall 100s extends in a vertical direction. Fig.12 100s is represented as axis AX. A passage 100p is configured on the side wall 100s. The internal space of the first chamber 100 can be connected to the internal space of the conveying module disposed outside the first chamber 100 via the passage 100p. In one embodiment, the passage 100p can be opened and closed by a gate valve 100g. The substrate W can be conveyed between the internal space of the first chamber 100 and the outside of the first chamber 100 via the passage 100p.

[0088] In one embodiment, the side wall 100s may be provided with an opening 100o. The opening 100o has a size through which the second chamber 200 can pass. In one embodiment, the interior space of the first chamber 100 can be connected to the interior space of the conveying module via the opening 100o. In one embodiment, the opening 100o can be opened and closed by a gate valve 100v. The second chamber 200 can be conveyed between the interior space of the first chamber 100 and the outside of the first chamber 100 via the opening 100o.

[0089] In one embodiment, a portion of the side wall 100s may have a double-layer structure formed by an inner side wall 100i and an outer side wall 100e. The inner side wall 100i and the outer side wall 100e provide a space 100q therebetween. In one embodiment, an opening 100o is formed in the inner side wall 100i and the outer side wall 100e. In order to open and close the opening 100o, a gate valve 100v may be provided along the inner side wall 100i.

[0090] In one embodiment, the upper portion 100u may have a circular plate shape with the plate surface facing the vertical direction. The upper portion 100u extends from the upper end of the side wall 100s in a horizontal direction perpendicular to the axis AX. The upper portion 100u may have an opening in a region intersecting the axis AX.

[0091] In one embodiment, the first chamber 100 may further include a movable portion 100m. The movable portion 100m may be a part of the first chamber 100 or may not be a part thereof. In one embodiment, the movable portion 100m is disposed between the upper portion 100u of the first chamber 100 and the second chamber 200. The movable portion 100m may be configured to be movable upward and downward in the first chamber 100.

[0092] In one embodiment, the plasma processing device 50 may further include a lifting mechanism 120. The lifting mechanism 120 is configured to move the movable part 100m upward and downward. The lifting mechanism 120 may include a driving device 120d and a shaft 120s. The movable part 100m may be fixed to the shaft 120s. The shaft 120s may extend upward from the movable part 100m through the opening of the upper part 100u. The driving device 120d may be disposed outside the first chamber 100. In one embodiment, the driving device 120d is configured to move the shaft 120s upward and downward. The driving device 120d includes, for example, a motor. The movable part 100m may move upward and downward by moving the shaft 120s upward and downward.

[0093] In one embodiment, the plasma processing device 50 may further include a bellows 140 that can be extended and retracted up and down. The bellows 140 may be disposed between the movable portion 100m and the upper portion 100u. The lower end of the bellows 140 may be fixed to the movable portion 100m. The upper end of the bellows 140 may be fixed to the upper portion 100u. The bellows 140 may separate the internal space of the first chamber 100 located outside the bellows 140 from the external space of the first chamber 100 connected to the inner side of the bellows 140.

[0094] In one embodiment, the movable part 100m may include a first component 100a and a second component 100b. The first component 100a and the second component 100b may be fixed to each other. The first component 100a may have a substantially circular plate shape. The first component 100a may be formed of a conductor such as aluminum. The first component 100a can constitute an upper electrode in the plasma processing device 50. The second component 100b may have a substantially cylindrical shape. The second component 100b may extend along the outer circumference of the first component 100a. The second component 100b may have an upper plate with a plate surface facing upward above the first component 100a. The lower end of the bellows 140 may be fixed to the upper plate of the second component 100b.

[0095] In one embodiment, the movable portion 100m may constitute a showerhead together with a top portion 200c described later of the second chamber 200. That is, the movable portion 100m may constitute a part of a showerhead for supplying gas to a plasma processing space S described later. In this embodiment, the movable portion 100m may have a gas diffusion chamber 100d and a plurality of gas holes 100h.

[0096] In one embodiment, the gas diffusion chamber 100d may be disposed in the first component 100a. The gas diffusion chamber 100d may be connected to a gas supply unit 160. The gas supply unit 160 may be disposed outside the first chamber 100. The gas supply unit 160 may include one or more gas supply sources, one or more flow controllers, and one or more valves used in the plasma processing device 50. Each of the one or more gas supply sources may be connected to the gas diffusion chamber 100d via a corresponding flow controller and a corresponding valve. A plurality of gas holes 100h may extend downward from the gas diffusion chamber 100d.

[0097] In one embodiment, the substrate support part 300 is arranged in the first chamber 100 and is located below the movable part 100m. The substrate support part 300 is configured to support the substrate W on the support surface. The substrate support part 300 can be supported by a support part 310 arranged below the substrate support part 300. The support part 310 can have a substantially cylindrical shape. The support part 310 can be formed of an insulator such as quartz, for example. The support part 310 can extend upward from the bottom plate 320. The bottom plate 320 can be formed of a metal conductor such as aluminum.

[0098] The substrate support portion 300 may include a lower electrode 340 and an electrostatic chuck 360. The lower electrode 340 may have a substantially disc shape. The central axis of the lower electrode 340 may be substantially consistent with the axis AX. The lower electrode 340 may be formed of a conductor such as aluminum. The lower electrode 340 may have a flow path 340f therein. The flow path 340f extends, for example, in a spiral shape. The flow path 340f may be connected to a refrigeration unit 350. The refrigeration unit 350 may be disposed outside the first chamber 100. The refrigeration unit 350 may supply a cooling medium to the flow path 340f. The cooling medium supplied to the flow path 340f may return to the refrigeration unit 350.

[0099] The plasma processing device 50 may further include a first high frequency power supply 410 and a second high frequency power supply 420. The first high frequency power supply 410 is a power supply (RF power supply) that generates a first high frequency power (RF signal). In one embodiment, the first high frequency power has a frequency suitable for the generation of plasma. The frequency of the first high frequency power may be, for example, above 27 MHz. In one embodiment, the first high frequency power supply 410 may be electrically connected to the lower electrode 340 via a matcher 410m. In one embodiment, the matcher 410m may have a matching circuit for matching the impedance of the load side (lower electrode 340 side) of the first high frequency power supply 410 with the output impedance of the first high frequency power supply 410. In addition, the first high frequency power supply 410 may also be connected to the upper electrode instead of the lower electrode 340 via the matcher 410m.

[0100] The second high frequency power source 420 is a power source (RF power source) that generates a second high frequency power (RF signal). In one embodiment, the second high frequency power has a frequency suitable for attracting ions to the substrate W. The frequency of the second high frequency power may be, for example, 13.56 MHz or less. In one embodiment, the second high frequency power source 420 may be electrically connected to the lower electrode 340 via a matcher 420m. In one embodiment, the matcher 420m may have a matching circuit for matching the impedance of the load side (lower electrode 340 side) of the second high frequency power source 420 with the output impedance of the second high frequency power source 420.

[0101] In one embodiment, the electrostatic chuck 360 is disposed on the lower electrode 340. The electrostatic chuck 360 may include a main body and an electrode 360a. The main body of the electrostatic chuck 360 may have a substantially disc shape. The central axis of the electrostatic chuck 360 may be substantially consistent with the axis AX. The main body of the electrostatic chuck 360 may be formed of ceramic. The substrate W is placed on the upper surface of the main body of the electrostatic chuck 360. The electrode 360a may be a film formed by a conductor. The electrode 360a is disposed in the main body of the electrostatic chuck 360. The electrode 360a may be connected to the DC power supply 360d via a switch 360s. In one embodiment, when the voltage from the DC power supply 360d is applied to the electrode 360a, an electrostatic attraction is generated between the electrostatic chuck 360 and the substrate W. Through the generated electrostatic attraction, the substrate W is adsorbed on the electrostatic chuck 360 and is held by the electrostatic chuck 360. The plasma processing apparatus 50 may provide a gas line for supplying a heat transfer gas (eg, helium) to a gap between the electrostatic chuck 360 and the back side of the substrate W.

[0102] The substrate support part 300 can support the edge ring ER disposed thereon. The substrate W can be placed on the electrostatic chuck 360 in the region surrounded by the edge ring ER. The edge ring ER can be formed of, for example, silicon, quartz, or silicon carbide.

[0103] The plasma processing device 50 may further include an insulating portion 370 . The insulating portion 370 may be formed of an insulator such as quartz. The insulating portion 370 may have a substantially cylindrical shape. The insulating portion 370 may extend along the outer periphery of the lower electrode 340 and the outer periphery of the electrostatic chuck 360 .

[0104] The plasma processing device 50 may further include a conductor portion 380. The conductor portion 380 may be formed of a conductor such as aluminum. The conductor portion 380 may have a substantially cylindrical shape. The conductor portion 380 may be disposed along the periphery of the substrate support portion 300. The conductor portion 380 may extend in the up-down direction along the periphery of the insulating portion 370. The conductor portion 380 may be connected to the ground. In one example, the conductor portion 380 may be grounded via the bottom plate 320 and the bottom 100f of the first chamber 100.

[0105] The plasma processing device 50 may further include a cover ring 390. The cover ring 390 may be formed of an insulator such as quartz. The cover ring 390 may have a ring shape. The cover ring 390 may be disposed on the insulating portion 370 and the conductor portion 380 in a manner that the cover ring 390 is located radially outside the configuration region of the edge ring ER.

[0106] The plasma processing apparatus 50 may further include a contact 400. In one embodiment, the contact 400 may be electrically connected to the conductor portion 380. In one embodiment, the second chamber 200 abuts against the contact 400 in a state where the second chamber 200 forms the plasma processing space S together with the substrate support portion 300. In one embodiment, the contact 400 is disposed outside the cover ring 390 and extends upward from the conductor portion 380.

[0107] The contact member 400 may be configured to be in elastic contact with the second chamber 200. Fig.13 As shown, the contact member 400 may have a spring 400s. The contact member 400 may further include a contact portion 400c. The spring 400s and the contact portion 400c may have conductivity. The lower end of the spring 400s may be fixed to the conductor portion 380. The spring 400s may extend upward from the conductor portion 380. The contact portion 400c may be fixed to the upper end of the spring 400s. The contact portion 400c may be a portion that contacts the second chamber 200.

[0108] In one embodiment, if Fig.12 As shown, the second chamber 200 is disposed in the first chamber 100 and forms a plasma processing space S together with the substrate support 300. The plasma processing space S can be a space where plasma is generated and the substrate W is processed. The second chamber 200 can be formed of a conductor. The second chamber 200 is an example of an inner chamber.

[0109] In one embodiment, the second chamber 200 may include a top 200c, a side 200s, and a bottom 200b. The top 200c may have a substantially circular plate shape. The top 200c may extend in a horizontal direction above the plasma processing space S. The upper surface of the top 200c may abut against the lower surface of the movable part 100m. A plurality of air holes 200h may be arranged on the top 200c. The plurality of air holes 200h penetrate the top 200c and open toward the plasma processing space S. The plurality of air holes 200h may be connected to the plurality of air holes 100h, respectively.

[0110] In one embodiment, the side portion 200s may have a substantially cylindrical shape. The side portion 200s may extend in a circumferential direction at the side of the plasma processing space S. The side portion 200s may extend downward from an edge of the top portion 200c and be connected to an edge of the bottom portion 200b.

[0111] In one embodiment, the bottom portion 200b may have a substantially annular shape. The bottom portion 200b may extend horizontally from the lower end of the side portion 200s toward the axis AX side (center side). The bottom portion 200b may abut against at least one of the contact 400 and the conductor portion 380 .

[0112] A plurality of through holes may be formed in the bottom 200b. The plasma processing device 50 may further include an exhaust device 700. The exhaust device 700 may include a pressure regulator such as an automatic pressure control valve and a pressure reducing pump such as a turbomolecular pump. The exhaust device 700 may be connected to the bottom 100f of the first chamber 100 below the bottom 200b.

[0113] The second chamber 200 may be detachable from the first chamber 100. In one embodiment, Fig.12 and Fig.13 As shown, the plasma processing apparatus 50 may further include a clamp 500 and a release mechanism 600. The clamp 500 may be configured to releasably fix the second chamber 200 to the first chamber 100. The release mechanism 600 may be configured to release the clamp 500 from fixing the second chamber 200.

[0114] In one embodiment, if Fig.13 As shown, the clamp 500 releasably fixes the top 200c of the second chamber 200 to the movable portion 100m of the first chamber 100. In one embodiment, the clamp 500 may include a plurality of support portions 520, a plurality of springs 540, and a plurality of plates 560. In addition, the number of the support portions 520, the number of the springs 540, and the number of the plates 560 of the clamp 500 may each be one.

[0115] Each of the plurality of support parts 520 may have a rod shape that is long in the vertical direction. Each of the plurality of support parts 520 may have a lower end 520b that protrudes from the support part body in the horizontal direction. In the movable part 100m of the first chamber 100, a plurality of cavities 100c formed on the upper surface of the first component 100a and a plurality of holes 100t extending downward from the cavities 100c and penetrating the first component 100a from top to bottom may be configured. The cavity 100c may be closed by a cover 580 provided on the upper surface of the first component 100a. A recess 200r may be configured on the upper surface of the top 200c of the second chamber 200. Each of the plurality of support parts 520 may penetrate the cavity 100c and the hole 100t from top to bottom. The lower end 520b of the support part 520 may be located in the recess 200r. The recessed portion 200r may include an expanded portion (step portion) 200e that expands in the horizontal direction, and the expanded portion 200e may form a locking portion 200f in the recessed portion 200r. The lower end portion 520b may be locked to the locking portion 200f.

[0116] The plate 560 may be fixed to the upper end of the support portion 520. The plate 560 may be disposed in the cavity 100c. The spring 540 may be disposed between the bottom surface of the cavity 100c and the plate 560 along the support portion 520. The spring 540 applies force to the plate 560 upward relative to the movable portion 100m. As a result, the support portion 520 is applied upward, and as a result, the lower end portion 520b of the support portion 520 is pressed against the locking portion 200f of the top portion 200c, and the second chamber 200 can be held and fixed to the movable portion 100m.

[0117] In one embodiment, the release mechanism 600 may include an air supply device. The air supply device can supply air to the gap between the cover 580 and the plate 560. The release mechanism 600 presses the plate 560 by supplying air to the gap between the cover 580 and the plate 560, thereby separating the lower end 520b of the support portion 520 from the locking portion 200f of the top portion 200c, and releasing the second chamber 200 from the movable portion 100m. In a state where the second chamber 200 and the movable portion 100m are released from being fixed, the second chamber 200 can be removed from the first chamber 100.

[0118] In the above-mentioned plasma processing apparatus 50, component 1 can be applied to the second chamber 200. It can be that the conductive protrusion 11 or protrusion 10a of component 1 is arranged on the upper surface of the top 200c of the second chamber 200 as an electrical contact, and the second chamber 200 is electrically connected to the movable part 100m of the first chamber 100. In this case, the conductive protrusion 11 or protrusion 10a can be in contact with the lower surface of the first component 100a. In addition, it can be that the conductive protrusion 11 or protrusion 10a of component 1 is arranged on the lower surface or inner peripheral surface of the bottom 200b as an electrical contact, and the second chamber 200 is electrically connected to the conductor part 380. In this case, the conductive protrusion 11 or protrusion 10a can be in contact with at least any one of the conductor part 380 and the contact member 400.

[0119] FIG. 14 is a diagram showing an example of arrangement of the conductive protrusions 11 (protrusions 10a) of the component 1 on the upper surface of the top portion 200c of the second cavity 200. The conductive protrusions 11 or protrusions 10a may be arranged as follows: Fig.14A As shown, the top surface of the top 200c is configured as a ring extending over the entire circumference, or as shown in FIG. Fig. 14B The conductive protrusion 11 or the protrusion 10a may also be configured as a dotted line in a ring shape. Fig. 14C As shown in FIG. 1 , the top surface of the top 200c is configured in a concentric circle shape. In this case, the conductive protrusion 11 or the protrusion 10a may be a ring shape that extends all around, or may be a dotted line shape. The conductive protrusion 11 or the protrusion 10a may also be as shown in FIG. Fig.14D As shown, a plurality of points are arranged in a convex shape (pin shape) on the upper surface of the top portion 200c.

[0120] FIG. 15 is a diagram showing an example of arrangement of the conductive protrusions 11 (protrusions 10a) of the component 1 at the bottom 200b of the second cavity 200. The conductive protrusions 11 or protrusions 10a may be arranged as follows: Fig.15A As shown, the lower surface of the bottom 200b is configured as a ring extending over the entire circumference, or as shown in FIG. Fig. 15B As shown in FIG. 1 , the bottom surface of the bottom 200b is configured as a dotted line in a ring shape. The conductive protrusion 11 or the protrusion 10a may also be as shown in FIG. Fig. 15C As shown in FIG. 1 , the bottom surface of the bottom 200b is provided with a plurality of convex shapes (pin shapes). The conductive protrusions 11 or 10a may also be provided as Fig.15D As shown, the inner peripheral surface of the bottom 200b is configured in a ring shape.

[0121] Plasma in Fig.12The plasma is generated in the plasma processing space S in the second chamber 200 shown in the figure. The potential generated by the plasma generated in the plasma processing space S is grounded from the second chamber 200 through, for example, the conductor portion 380, the bottom 100f of the first chamber 100, and the side wall 100s. In addition, the potential generated by the plasma is grounded from the second chamber 200 through, for example, the movable portion 100m, the bellows 140, the upper portion 100u of the first chamber 100, and the side wall 100s.

[0122] In addition, component 1 can also be applied to other components that are located on a current path for grounding the potential generated by the plasma in the plasma processing device 50. Component 1 can be applied to the movable part 100m, the bellows 140, the various components of the first chamber 100, etc. Component 1 can also be applied to other components that constitute the plasma processing device. Component 1 can be applied to a shower head, a lower electrode, an electrostatic chuck, an edge ring, an upper electrode, etc. The shape of the conductive substrate 10 in component 1, the number, shape, position of the conductive protrusions 11 (protrusions 10a), the thickness of the coating 12, etc. can be appropriately changed according to the components of the plasma processing device to which it is applied.

[0123] According to the present exemplary embodiment, a component 1 for a plasma processing apparatus includes a conductive substrate 10, a plurality of conductive protrusions 11, and a coating 12, wherein the coating 12 contains a Si-containing material and is configured in such a manner that the conductive substrate 10 is not exposed and a portion of each conductive protrusion 11 is exposed. By making the component 1 have the conductive substrate 10 and the conductive protrusions 11, the resistance of the component 1 can be reduced. By making a portion of the conductive protrusions 11 exposed, the conductive protrusions 11 can be used as electrical contacts. Thus, the component 1 can be used as a component located on a current path for grounding the potential generated by plasma. In addition, the conductive protrusions 11 can also be used as a portion fixed to other components. Moreover, by configuring the coating 12 containing a Si material on the surface of the component 1, it is possible to suppress the generation of particles from the conductive substrate 10 when plasma is generated. By making the component 1 have the conductive substrate 10 and the conductive protrusions 11, the strength of the component 1 can be ensured. In addition, by forming the coating 12 using CVD, the adhesion of the coating 12 to the conductive substrate 10 and the conductive protrusions 11 is improved, and as a result, the strength of the component 1 can be improved.

[0124] By forming the conductive substrate 10 from carbon, the conductive substrate 10 can be easily molded and the resistance can be reduced. By forming the conductive protrusion 11 from a metal different from the conductive substrate 10, the carbon of the conductive substrate 10 is not exposed, and the generation of particles from the carbon can be suppressed. By forming the conductive protrusion 11 or the conductive substrate 10 and the coating 12 from materials with similar linear expansion coefficients, the strength of the component 1 against temperature changes can be improved.

[0125] Since the conductive protrusions 11 and the conductive base material 10 are integrally formed, that is, the component 1 includes the conductive base material 10 having the protrusions 10 a , the strength of the component 1 can be improved.

[0126] Fig.16 1 is a diagram for explaining an example of the structure of the component 1 when the component 1 is applied to the second chamber 200 of the plasma processing apparatus 50. In this case, the component 1 may include a conductive substrate 10, at least one upper conductive protrusion 11-1, at least one lower conductive protrusion 11-2, and a coating 12 containing Si.

[0127] The conductive substrate 10 may include a top 800, an annular side wall 801, and a bottom 802. The top 800 may have a substantially circular plate shape. The annular side portion 801 may have a substantially cylindrical shape. The bottom 802 may have a substantially circular ring shape. The bottom 802 may extend in a horizontal direction from the annular side portion 501 toward the inside. In addition, the top 800 may be formed with a plurality of pores that penetrate in the longitudinal direction. The bottom 802 may be formed with a plurality of exhaust holes that penetrate in the longitudinal direction.

[0128] One or more upper conductive protrusions 11 - 1 may protrude upward from the upper surface of the top portion 800 of the conductive base 10 .

[0129] One or more lower conductive protrusions 11 - 2 may protrude downward from the lower surface of the bottom portion 802 of the conductive base 10 .

[0130] The coating layer 12 may be formed on the surfaces of the conductive chamber substrate 10, the upper conductive protrusion 11-1, and the lower conductive protrusion 11-2 in such a manner that the upper conductive protrusion 11-1 and the lower conductive protrusion 11-2 each have an exposed portion. The coating layer 12 may also be formed on the inner side surface of the air hole of the top 800 and the inner side surface of the exhaust hole of the bottom 802.

[0131] Fig.17 and Fig.18 This is a diagram for explaining an example of the structure of the plasma processing apparatus 50 in the case where the component 1 is applied to the second chamber 200 of the plasma processing apparatus 50 .

[0132] The exposed portion of the upper conductive protrusion 11-1 may be in contact with a first component 110a, which is an example of an upper conductive component. The first component 110a may be connected to a ground potential. Fig.17 As shown in FIG. 1 , the exposed portion of the lower conductive protrusion 11 - 2 can be in contact with a contact 400 as an example of a lower conductive member. The contact 400 can be connected to a ground potential. Fig.18As shown, the exposed portion of the lower conductive protrusion 11-2 can be in contact with the conductor part 380 as an example of the lower conductive member. The conductor part 380 can be connected to the ground potential. The air hole at the top 800 can be connected to the air hole 100h, and the exhaust hole at the bottom 802 can be connected to the exhaust device 700.

[0133] The embodiments of the present disclosure also include the following aspects.

[0134] (Note 1)

[0135] A component for a plasma processing device, comprising:

[0136] Conductive substrate;

[0137] a plurality of conductive protrusions protruding from a surface of the conductive substrate, and the plurality of conductive protrusions being electrically connected to each other via the conductive substrate; and

[0138] The Si-containing coating layer is formed on the surface of the conductive base material and the surfaces of the plurality of conductive protrusions in such a manner that a portion of each of the plurality of conductive protrusions is exposed.

[0139] (Note 2)

[0140] A component for a plasma processing apparatus as described in Supplementary Note 1, wherein:

[0141] The conductive substrate is formed of a first material,

[0142] The plurality of conductive protrusions are formed of a second material different from the first material,

[0143] Each of the plurality of conductive protrusions extends into the conductive substrate.

[0144] (Note 3)

[0145] A component for a plasma processing apparatus as described in Supplementary Note 2, wherein:

[0146] The first material includes carbon and the second material includes metal.

[0147] (Note 4)

[0148] A component for a plasma processing apparatus as described in Supplementary Note 3, wherein:

[0149] The second material includes tungsten or molybdenum.

[0150] (Note 5)

[0151] A component for a plasma processing apparatus as described in Supplementary Note 1, wherein:

[0152] The plurality of conductive protrusions are integrally formed with the conductive substrate.

[0153] (Note 6)

[0154] A component for a plasma processing device as described in Supplementary Note 5, wherein:

[0155] The conductive substrate and the plurality of conductive protrusions are formed of tungsten or molybdenum.

[0156] (Note 7)

[0157] A component for a plasma processing device as described in any one of Supplementary Notes 1 to 6, wherein:

[0158] The Si-containing coating is formed of Si, SiC, Si3N4 or SiO2.

[0159] (Note 8)

[0160] A component for a plasma processing device as described in any one of Supplementary Notes 1 to 7, wherein:

[0161] At least one of the plurality of conductive protrusions has an exposed front end and a non-exposed side surface.

[0162] (Note 9)

[0163] A component for a plasma processing device as described in any one of Supplementary Notes 1 to 7, wherein:

[0164] At least one of the plurality of conductive protrusions has an exposed front end and side surfaces.

[0165] (Note 10)

[0166] A method for manufacturing a component for a plasma processing device, comprising:

[0167] providing a conductive substrate formed of a first material;

[0168] a step of disposing a plurality of conductive protrusions on a surface of the conductive substrate, wherein the plurality of conductive protrusions are formed of a second material different from the first material and are electrically connected to each other via the conductive substrate; and

[0169] A step of forming a Si-containing coating layer on the surface of the conductive substrate and the surfaces of the plurality of conductive protrusions by CVD so that a portion of each of the plurality of conductive protrusions is exposed.

[0170] (Note 11)

[0171] The method for manufacturing a component for a plasma processing apparatus as described in Supplementary Note 10, wherein:

[0172] The first material comprises carbon,

[0173] The second material includes metal.

[0174] (Note 12)

[0175] The method for manufacturing a component for a plasma processing apparatus as described in Supplementary Note 11, wherein:

[0176] The second material includes tungsten or molybdenum.

[0177] (Note 13)

[0178] The method for manufacturing a component for a plasma processing device as described in any one of Supplementary Notes 10 to 12, wherein:

[0179] The Si-containing coating is formed of Si, SiC, Si3N4 or SiO2.

[0180] (Note 14)

[0181] A method for manufacturing a component for a plasma processing device, comprising:

[0182] providing a conductive substrate formed of a first material;

[0183] A step of forming a Si-containing coating layer on the surface of the conductive substrate by CVD; and

[0184] A step of mounting a plurality of conductive protrusions on the conductive substrate, wherein the plurality of conductive protrusions are formed of a second material different from the first material and are electrically connected to each other via the conductive substrate, and a portion of each of the plurality of conductive protrusions is exposed from the Si-containing coating layer.

[0185] (Note 15)

[0186] The method for manufacturing a component for a plasma processing apparatus as described in Supplementary Note 14, wherein:

[0187] The first material comprises carbon,

[0188] The second material includes metal.

[0189] (Note 16)

[0190] The method for manufacturing a component for a plasma processing apparatus as described in Supplementary Note 15, wherein:

[0191] The second material includes tungsten or molybdenum.

[0192] (Note 17)

[0193] The method for manufacturing a component for a plasma processing device as described in any one of Supplementary Notes 14 to 16, wherein:

[0194] The Si-containing coating is formed of Si, SiC, Si3N4 or SiO2.

[0195] (Note 18)

[0196] A method for manufacturing a component for a plasma processing device, comprising:

[0197] A step of providing a conductive substrate having a plurality of protrusions, wherein the conductive substrate is formed of tungsten or molybdenum; and

[0198] A step of forming a Si-containing coating layer on the surface of the conductive substrate by CVD so that a portion of each of the plurality of protrusions is exposed.

[0199] (Note 19)

[0200] The method for manufacturing a component for a plasma processing apparatus as described in Supplementary Note 18, wherein:

[0201] The Si-containing coating is formed of Si, SiC, Si3N4 or SiO2.

[0202] (Note 20)

[0203] A plasma processing device, comprising:

[0204] lateral chamber;

[0205] a substrate support portion disposed in the outer chamber;

[0206] A lower conductive member disposed around the substrate support portion and connected to a ground potential;

[0207] an upper conductive member disposed above the substrate support portion and connected to a ground potential;

[0208] an inner chamber disposed in the outer chamber and defining the processing space for processing the substrate on the substrate support; and

[0209] an RF power supply configured to supply an RF signal to the substrate support portion in order to generate plasma in the processing space,

[0210] The inner chamber comprises:

[0211] A conductive chamber substrate;

[0212] at least one upper conductive protrusion protruding from the upper surface of the conductive chamber substrate;

[0213] at least one lower conductive protrusion protruding from a lower surface of the conductive chamber substrate and electrically connected to the at least one upper conductive protrusion via the conductive chamber substrate; and

[0214] a Si-containing coating layer formed on the surfaces of the conductive chamber substrate, the at least one upper conductive protrusion, and the at least one lower conductive protrusion in such a manner that the at least one upper conductive protrusion and the at least one lower conductive protrusion each have an exposed portion,

[0215] The exposed portion of the at least one upper conductive protrusion is in contact with the upper conductive component,

[0216] An exposed portion of the at least one lower conductive protrusion is in contact with the lower conductive component.

[0217] The above embodiments are described for the purpose of explanation and are not intended to limit the scope of the present disclosure. The above embodiments can be variously modified without departing from the scope and purpose of the present disclosure. For example, a part of the constituent elements in a certain embodiment can be added to other embodiments. In addition, a part of the constituent elements in a certain embodiment can be replaced with corresponding constituent elements in other embodiments.

[0218] Description of Reference Numerals

[0219] 1...component, 10...conductive substrate, 11...conductive protrusion, 11a...front end, 11b...side, 12...coating, 50...plasma processing device, 200...second chamber, 300...substrate support, W...substrate.

Claims

1. A component for a plasma processing device, characterized in that: include: Conductive substrate; a plurality of conductive protrusions protruding from a surface of the conductive substrate, wherein the plurality of conductive protrusions are electrically connected to each other via the conductive substrate; and The Si-containing coating layer is formed on the surface of the conductive base material and the surfaces of the plurality of conductive protrusions in such a manner that a portion of each of the plurality of conductive protrusions is exposed.

2. The component for a plasma processing device according to claim 1, wherein: The conductive substrate is formed of a first material, The plurality of conductive protrusions are formed of a second material different from the first material, Each of the plurality of conductive protrusions extends into the conductive substrate.

3. The component for a plasma processing device according to claim 2, wherein: The first material comprises carbon, The second material includes metal.

4. The component for a plasma processing device according to claim 3, wherein: The second material includes tungsten or molybdenum.

5. The component for a plasma processing apparatus according to claim 1, wherein: The plurality of conductive protrusions are integrally formed with the conductive substrate.

6. The component for a plasma processing apparatus according to claim 5, wherein: The conductive substrate and the plurality of conductive protrusions are formed of tungsten or molybdenum.

7. The component for a plasma processing apparatus according to any one of claims 1 to 6, wherein: The Si-containing coating is formed of Si, SiC, Si3N4 or SiO2.

8. The component for a plasma processing apparatus according to claim 1, wherein: At least one of the plurality of conductive protrusions has an exposed front end and a non-exposed side surface.

9. The component for a plasma processing apparatus according to claim 1, wherein: At least one of the plurality of conductive protrusions has an exposed front end and side surfaces.

10. A method for manufacturing a component for a plasma processing device, characterized in that: include: providing a conductive substrate formed of a first material; a step of disposing a plurality of conductive protrusions on a surface of the conductive substrate, the plurality of conductive protrusions being formed of a second material different from the first material and being electrically connected to each other via the conductive substrate; and A step of forming a Si-containing coating layer on the surface of the conductive substrate and the surfaces of the plurality of conductive protrusions by CVD so that a portion of each of the plurality of conductive protrusions is exposed.

11. The method for manufacturing a component for a plasma processing apparatus according to claim 10, wherein: The first material comprises carbon, The second material includes metal.

12. The method for manufacturing a component for a plasma processing apparatus according to claim 11, wherein: The second material includes tungsten or molybdenum.

13. The method for manufacturing a component for a plasma processing apparatus according to any one of claims 10 to 12, characterized in that: The Si-containing coating is formed of Si, SiC, Si3N4 or SiO2.

14. A method for manufacturing a component for a plasma processing device, characterized in that: include: providing a conductive substrate formed of a first material; A step of forming a Si-containing coating on the surface of the conductive substrate by CVD; and A step of mounting a plurality of conductive protrusions on the conductive substrate, wherein the plurality of conductive protrusions are formed of a second material different from the first material and are electrically connected to each other via the conductive substrate, and a portion of each of the plurality of conductive protrusions is exposed from the Si-containing coating layer.

15. The method for manufacturing a component for a plasma processing apparatus according to claim 14, wherein: The first material comprises carbon, The second material includes metal.

16. The method for manufacturing a component for a plasma processing apparatus according to claim 15, wherein: The second material includes tungsten or molybdenum.

17. The method for manufacturing a component for a plasma processing apparatus according to any one of claims 14 to 16, wherein: The Si-containing coating is formed of Si, SiC, Si3N4 or SiO2.

18. A method for manufacturing a component for a plasma processing device, characterized in that: include: A step of providing a conductive substrate having a plurality of protrusions, wherein the conductive substrate is formed of tungsten or molybdenum; and A step of forming a Si-containing coating layer on the surface of the conductive substrate by CVD so that a portion of each of the plurality of protrusions is exposed.

19. The method for manufacturing a component for a plasma processing apparatus according to claim 18, wherein: The Si-containing coating is formed of Si, SiC, Si3N4 or SiO2.

20. A plasma processing device, characterized in that: include: lateral chamber; a substrate support portion disposed in the outer chamber; A lower conductive member disposed around the substrate support portion and connected to a ground potential; an upper conductive member disposed above the substrate support portion and connected to a ground potential; an inner chamber disposed in the outer chamber and defining a processing space for processing the substrate on the substrate support; and an RF power supply configured to supply an RF signal to the substrate support portion in order to generate plasma in the processing space, The inner chamber comprises: A conductive chamber substrate; at least one upper conductive protrusion protruding from the upper surface of the conductive chamber substrate; at least one lower conductive protrusion protruding from a lower surface of the conductive chamber substrate and electrically connected to the at least one upper conductive protrusion via the conductive chamber substrate; and a Si-containing coating layer formed on the surfaces of the conductive chamber substrate, the at least one upper conductive protrusion, and the at least one lower conductive protrusion in such a manner that the at least one upper conductive protrusion and the at least one lower conductive protrusion each have an exposed portion, The exposed portion of the at least one upper conductive protrusion is in contact with the upper conductive component, An exposed portion of the at least one lower conductive protrusion is in contact with the lower conductive component.

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