Grinding method for alloy target material with sputtering surface inclined plane

Abstract

The invention relates to a grinding method of an alloy target material with a sputtering surface inclined plane. The grinding method comprises the following steps that an alloy target blank is sequentially subjected to outer circle grinding and inclined face grinding; the step of bevel grinding comprises the substeps of sequentially carrying out rough grinding treatment, semi-accurate grinding treatment and accurate grinding treatment on the edge of the alloy target material subjected to cylindrical grinding so as to remove a region to be ground and removed and obtain a sputtering surface bevel; the inclined plane angle of the sputtering surface is adjusted before the semi-fine grinding treatment; an alloy target material finished product with a sputtering surface inclined plane is obtained; compared with the prior art, the low flatness of the alloy target material finished product is guaranteed, meanwhile, the diameter deviation of the sputtering face plane of the alloy target material finished product is low and is as low as 0.5 mm or below, the situations of corner chipping, cracking, slag falling and the like are avoided, and the quality and stability of the alloy target material finished product are improved.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor sputtering target materials, and in particular to a grinding method for an alloy target material with a sputtering surface slope. Background Art

[0002] In order to improve the stability and coating quality during the sputtering process, the bevel structure can increase the attachment surface area of ​​the edge of the target material, so that the anti-sputtering material can be more evenly attached to the bevel, thereby preventing the problem of peeling caused by excessive thickness of local attachments. It can also effectively reduce abnormal discharge in the sputtering reactor, making the sputtering layer formed on the target blank more uniform, and improving the performance of products such as semiconductor devices. However, there are many difficulties in grinding the sputtering surface bevel, such as: the size of the sputtering surface bevel cannot be guaranteed, and it is easy to collapse the corners and drop slag.

[0003] Especially for tungsten-silicon alloy targets, since they are welded from tungsten-silicon alloy target blanks and copper substrates, when processing the sputtering surface bevel, the contact area between the outermost target blank and the copper substrate is thin and close to a sharp angle, which is very easy to cause corner chipping and slag falling during the grinding process, resulting in excessive particles when vacuuming during the sputtering process of the target material, resulting in the inability to use the machine normally; at the same time, due to the hard and brittle characteristics of tungsten-silicon material, the tungsten-silicon alloy target blank and the copper substrate cannot be pressurized and leveled after brazing, the flatness of the sputtering surface cannot be guaranteed after welding, and the diameter size of the sharp angle of the sputtering surface bevel is difficult to guarantee.

[0004] In order to ensure the flatness of the sputtering surface, the existing processing methods are generally grinding and wire cutting. This method can achieve higher dimensional accuracy and smaller flatness for flat target blanks, but for welded tungsten silicon target blanks with inclined surfaces, the use of grinding and wire cutting methods cannot guarantee the inclined surface dimensional accuracy and lower flatness of the sputtering surface. Moreover, due to the large force of the grinding machine processing, it is very easy to cause the target blank and the copper substrate to desolder, and the thinner part of the target blank is prone to chipping.

[0005] In view of this, how to provide a grinding method that can ensure that a tungsten-silicon alloy target with a bevel has a higher dimensional accuracy and a smaller flatness, while also being able to avoid corner chipping and slag falling, is a technical problem that needs to be urgently solved in this field. Summary of the invention

[0006] In order to solve the above technical problems, the present invention provides a grinding method for an alloy target material having a sputtering surface bevel, which ensures the flatness of the finished alloy target material and makes the diameter size of the sputtering surface plane of the finished alloy target material more precise, while avoiding corner chipping, cracking and slag falling, thereby providing an excellent grinding method that can be used as a reference for the manufacture of semiconductor sputtering targets.

[0007] To achieve this object, the present invention adopts the following technical solutions:

[0008] The present invention provides a method for grinding an alloy target material having a sputtering surface slope, the grinding method comprising the following steps:

[0009] The alloy target blank is subjected to cylindrical grinding and bevel grinding in sequence; the bevel grinding includes sequentially performing rough grinding, semi-finishing grinding and finishing grinding on the edge of the alloy target after cylindrical grinding to remove the area to be ground and removed to obtain a sputtering surface bevel; before the semi-finishing grinding, the sputtering surface bevel angle is adjusted; and a finished alloy target with a sputtering surface bevel is obtained.

[0010] In the grinding method of the present invention, the bevel grinding is divided into three process stages: rough grinding, semi-finishing grinding and finishing grinding. Before the semi-finishing grinding, the bevel angle of the sputtering surface is adjusted to ensure the flatness of the finished tungsten silicon alloy target material, while reducing the plane diameter deviation of the sputtering surface of the finished tungsten silicon alloy target material, avoiding the occurrence of chipping, cracking and slag falling.

[0011] It is worth noting that the grinding method described in the present invention is particularly suitable for tungsten-silicon alloy targets. This is because tungsten-silicon alloy targets are hard and brittle and require a sputtering surface slope. Therefore, the sputtering surface diameter of the finished tungsten-silicon alloy target is particularly difficult to control, and it is very easy to cause corner chipping, cracking, and slag falling.

[0012] It is worth noting that the present invention aims to obtain an alloy target material having a sputtering surface bevel. In order to ensure that the alloy target blank of the alloy target material is concentric with the backing plate, the diameter of the alloy target blank will be pre-designed to be slightly larger than the backing plate. Before the bevel grinding, external cylindrical grinding is performed to make the alloy target blank concentric with the backing plate and the maximum outer circle tangent to each other, thereby improving the bonding between the target blank and the backing plate. Thereafter, the sharp corners of the edge of the alloy target material after external cylindrical grinding are ground away, and the initial flat sputtering target material is ground into a sputtering surface bevel, that is, bevel grinding, and finally an alloy target material having a sputtering surface bevel is obtained.

[0013] Preferably, the area to be removed by grinding includes a first area to be removed by grinding and a second area to be removed by grinding.

[0014] Preferably, the ratio of the outermost edge thickness of the area to be ground and removed to the thickness of the alloy target blank in the alloy target material blank is (0.5-0.8):1, for example, it can be 0.5:1, 0.55:1, 0.6:1, 0.65:1, 0.7:1, 0.75:1 or 0.8:1, etc.

[0015] The present invention further preferably has a ratio of the thickness of the outermost edge of the area to be ground and removed to the thickness of the alloy target blank in the alloy target blank of (0.5-0.8):1, in order to prevent the position where the sputtering surface slope of the alloy target material contacts the back plate after grinding from being too thin, resulting in chipping, slag falling, etc.

[0016] Preferably, the grinding head of the grinding tool used for the external cylindrical grinding includes a dendritic diamond grinding head.

[0017] The present invention further preferably adopts a tree-like diamond grinding head for the external cylindrical grinding, because the tree-like grinding head adopts a hollow design with 6 notches evenly distributed on the edge, which can achieve better heat dissipation and chip removal during the external cylindrical grinding process.

[0018] Preferably, the tool setting position for the external cylindrical grinding is the maximum external cylindrical position of the sputtering surface plane of the alloy target blank.

[0019] Preferably, the feed rate of the cylindrical grinding is 0.02-0.08 mm, for example, it can be 0.02 mm, 0.03 mm, 0.04 mm, 0.05 mm, 0.06 mm, 0.07 mm or 0.08 mm.

[0020] The present invention further preferably sets the feed rate of the cylindrical grinding to 0.02-0.08 mm, which is beneficial to achieving higher processing efficiency while ensuring the grinding quality; if the feed rate of the cylindrical grinding is too small, the processing efficiency will be low; if the feed rate of the cylindrical grinding is too large, it will cause chipping, slag, etc.

[0021] Preferably, before the bevel grinding, a first measurement is performed on the flatness of the sputtering surface of the alloy target after the cylindrical grinding to determine the bevel angle of the sputtering surface;

[0022] Preferably, the first measurement area of ​​the first measurement is a circular area with a straight line distance of 0 to 20 mm from the maximum outer circle position of the sputtering surface of the alloy target after outer circle grinding to the expected sputtering surface sharp corner close to the center of the sputtering surface plane, for example, it can be 3 mm, 5 mm, 10 mm, 12 mm, 15 mm, 18 mm or 20 mm, etc.

[0023] The predetermined sputtering surface angle is the position where the sputtering surface bevel and the sputtering surface plane intersect in the finished alloy target material having the sputtering surface bevel.

[0024] Preferably, the rough grinding process includes grinding away the first area to be ground away.

[0025] Preferably, the ratio of the thickness of the outermost edge of the first area to be ground and removed to the total thickness of the outermost edge of the area to be ground and removed is (0.35-0.75):1, for example, it can be 0.35:1, 0.40:1, 0.45:1, 0.50:1, 0.55:1, 0.60:1, 0.65:1, 0.70:1 or 0.75:1.

[0026] The present invention further preferably has a ratio of the thickness of the outermost edge of the first area to be ground and removed to the total thickness of the outermost edge of the area to be ground and removed of (0.35-0.75):1, that is, the bevel grinding is carried out in two stages, and the rough grinding treatment only removes the first area to be ground and removed. On the one hand, it is conducive to the subsequent further confirmation of the flatness and adjustment of the bevel angle of the sputtering surface, so that the flatness error of the finished alloy target material is low, thereby improving the quality of the target material; on the other hand, it prevents direct one-step removal, which may cause the sputtering surface bevel of the target blank to contact the back plate and cause corner chipping and slag falling.

[0027] Preferably, the grinding head of the grinding tool used in the rough grinding process includes an umbrella-shaped diamond grinding head.

[0028] Preferably, the feed amount of the rough grinding process is 0.05-0.11 mm, for example, it can be 0.05 mm, 0.06 mm, 0.07 mm, 0.08 mm, 0.09 mm, 0.10 mm or 0.11 mm.

[0029] The present invention further prefers that the feed amount of the rough grinding process is 0.05-0.11 mm, which is conducive to achieving higher processing efficiency while ensuring the grinding quality: if the feed amount of the rough grinding process is too low, it will lead to low processing efficiency; if the feed amount of the rough grinding process is too high, it will lead to chipping and slag.

[0030] Preferably, the first machining allowance of the sputtering surface slope obtained after the rough grinding treatment is 0.5-1.0 mm, for example, it can be 0.5 mm, 0.6 mm, 0.7 mm, 0.8 mm, 0.9 mm or 1.0 mm.

[0031] It is worth noting that the first machining allowance of the sputtering surface bevel obtained after the rough grinding treatment refers to the thickness from the sputtering surface bevel obtained after the rough grinding treatment to the sputtering surface bevel of the finished alloy target material, in order to adjust the sputtering surface bevel angle in time later.

[0032] Preferably, the semi-finishing grinding process includes grinding away the second area to be ground away.

[0033] Preferably, if the measured diameter of the sputtering surface plane of the alloy target material after the rough grinding process is larger than the theoretical diameter of the sputtering surface plane of the finished alloy target material, the angle of the sputtering surface bevel is reduced.

[0034] Preferably, if the measured diameter of the sputtering surface plane of the alloy target after the rough grinding process is smaller than the theoretical diameter of the sputtering surface plane of the finished alloy target, the sputtering surface bevel angle is increased.

[0035] Preferably, the flatness of the sputtering surface, the change in the plane diameter of the sputtering surface, and the change in the bevel angle of the sputtering surface of the alloy target after the rough grinding process conform to the following formula:

[0036]

[0037] Among them, x is the flatness of the sputtering surface of the alloy target after the rough grinding treatment, in mm; y is the change in the plane diameter of the sputtering surface of the alloy target after the rough grinding treatment, in mm; z is the change in the bevel angle of the sputtering surface of the alloy target after the rough grinding treatment, in degrees.

[0038] The change in the diameter of the sputtering surface plane is the difference between the measured diameter of the sputtering surface plane of the alloy target after the rough grinding treatment and the theoretical diameter of the sputtering surface plane of the finished alloy target; 15° in the formula is the initial sputtering surface bevel angle.

[0039] like Figure 4 and Figure 5 As shown, A represents the theoretical position of the inclined plane of the sputtering surface of the finished alloy target material, B represents the actual position of the inclined plane of the sputtering surface of the finished alloy target material, and d 1 It represents the theoretical diameter of the finished sputtering surface of the alloy target, in mm; d 2 represents the measured diameter of the finished sputtering surface of the alloy target, in mm; then y = d 2 -d 1 ; x represents flatness, that is, the height difference between the actual sputtering surface plane and the ideal sputtering surface plane, in mm; α 1 Indicates the theoretical sputtering surface bevel angle, in degrees; α 2 Indicates the actual sputtering surface bevel angle in degrees.

[0040] like Figure 4 As shown, if d 2 >d 1 , then the actual sputtering surface angle α 2 To reduce; Figure 5 As shown, if d 2 <d 1 , then the actual sputtering surface angle α 2 The angle size adjusted up, down or widens complies with the above relationship.

[0041] The present invention further preferably increases or decreases the sputtering surface bevel angle according to the size relationship between the measured diameter of the sputtering surface plane and the theoretical diameter of the sputtering surface plane during the semi-finishing treatment, so that the flatness of the obtained alloy target product is low, the sputtering uniformity is improved, and thus the quality of the subsequent semiconductor sputtering layer is beneficial. In addition, the present invention simulates the change in the flatness of the sputtering surface and the diameter of the sputtering surface plane by the change in the diameter of the intersection of the bevel when the sputtering surface plane is offset up and down by 0.05 to 0.3 mm through the CAD software, and obtains the relationship between the flatness of the sputtering surface and the bevel angle of the sputtering surface, so that the size of the diameter of the sputtering surface of the alloy target is more accurate.

[0042] Preferably, after the semi-finishing grinding, a semi-finished alloy target is obtained, and the second machining allowance of the sputtering surface slope of the semi-finished alloy target is 0.15-0.25 mm.

[0043] The present invention reserves a processing allowance for a subsequent fine grinding process in the semi-fine grinding process, thereby preventing the workpiece from being scrapped due to problems with subsequent machining accuracy that cannot be remedied.

[0044] Preferably, the grinding head of the grinding tool used in the semi-finishing process includes an umbrella-shaped diamond grinding head.

[0045] The present invention further preferably uses an umbrella-shaped diamond grinding head during the rough grinding process and the semi-fine grinding process, which is beneficial to increase the contact area between the grinding head and the inclined surface, thereby increasing the force-bearing area during grinding, avoiding excessive local force during the grinding process, resulting in product chipping.

[0046] Preferably, the feed amount of the semi-finishing grinding process is 0.03-0.08 mm, for example, it can be 0.03 mm, 0.04 mm, 0.05 mm, 0.06 mm, 0.07 mm or 0.08 mm.

[0047] The present invention further prefers that the feed amount of the semi-finishing grinding process is 0.03-0.08 mm, which is conducive to achieving higher processing efficiency while ensuring the grinding quality; if the feed amount of the semi-finishing grinding process is too small, it will lead to low processing efficiency; if the feed amount of the semi-finishing grinding process is too large, it will lead to chipping and slag.

[0048] Preferably, the fine grinding process includes grinding away the second machining allowance to obtain a finished alloy target material having a sputtering surface slope.

[0049] Preferably, the grinding head of the grinding tool used in the fine grinding process includes a columnar diamond grinding head.

[0050] The present invention further preferably comprises a grinding head of a grinding tool used in the fine grinding process, which is conducive to precisely controlling the grinding position, thereby accurately controlling the grinding angle and grinding amount, and obtaining better surface grinding quality and surface roughness.

[0051] Preferably, the feed amount of the fine grinding process is 0.01-0.05 mm, for example, it can be 0.01 mm, 0.02 mm, 0.03 mm, 0.04 mm or 0.05 mm.

[0052] As a further preferred technical solution of the present invention, the grinding method comprises the following steps:

[0053] (1) The alloy target blank is subjected to external cylindrical grinding using a dendritic diamond grinding head with a feed rate of 0.02 to 0.08 mm; the tool setting position of the external cylindrical grinding is the maximum external cylindrical position of the sputtering surface plane of the alloy target blank;

[0054] (2) performing a first measurement on the flatness of the sputtering surface of the alloy target after the cylindrical grinding in step (1) to determine the bevel angle of the sputtering surface; the first measurement area of ​​the first measurement is a circular area with a straight line distance of 0 to 20 mm from the maximum outer circle position of the sputtering surface of the alloy target after the cylindrical grinding to the expected sputtering surface sharp angle close to the center of the sputtering surface plane;

[0055] Then, the alloy target material after the cylindrical grinding is subjected to bevel grinding to remove the area to be ground and removed to obtain the sputtering surface bevel; the ratio of the total thickness of the outermost edge of the area to be ground and removed to the thickness of the alloy target blank in the alloy target blank is (0.5-0.8):1; the edge of the alloy target material after the cylindrical grinding is firstly subjected to rough grinding treatment with an umbrella-shaped diamond grinding head to grind and remove the first area to be ground and removed, and the feed amount is 0.05-0.11 mm; the ratio of the thickness of the outermost edge of the first area to be ground and removed to the total thickness of the outermost edge of the area to be ground and removed is (0.35-0.75):1; the first machining allowance of the sputtering surface bevel obtained after the rough grinding treatment is 0.5-1.0 mm;

[0056] If the measured diameter of the sputtering surface plane of the alloy target after the rough grinding treatment is larger than the theoretical diameter of the sputtering surface plane of the finished alloy target, the sputtering surface bevel angle is reduced; if the measured diameter of the sputtering surface plane of the alloy target after the rough grinding treatment is smaller than the theoretical diameter of the sputtering surface plane of the finished alloy target, the sputtering surface bevel angle is increased; and the adjustment is performed according to the following formula:

[0057]

[0058] Wherein, x is the flatness of the sputtering surface of the alloy target after the rough grinding treatment, in mm; y is the change in the diameter of the sputtering surface of the alloy target after the rough grinding treatment, in mm; z is the change in the inclined angle of the sputtering surface of the alloy target after the rough grinding treatment, in degrees; x is obtained by performing a second measurement on the flatness of the sputtering surface of the alloy target after the rough grinding treatment; the second measurement area of ​​the second measurement is the annular area with a linear distance of 2 to 15 mm from the maximum outer circle position of the sputtering surface plane of the alloy target after the rough grinding treatment to the center of the sputtering surface plane, for example, it can be 2 mm, 4 mm, 6 mm, 8 mm, 10 mm, 12 mm or 15 mm, etc.;

[0059] Then, the alloy target material after the rough grinding is semi-finished by using an umbrella-shaped diamond grinding head according to the adjusted sputtering surface bevel angle to grind and remove the second area to be ground and removed, and the feed amount is 0.03-0.08 mm to obtain a semi-finished alloy target material, and the second machining allowance of the sputtering surface bevel of the semi-finished alloy target material is 0.15-0.25 mm;

[0060] (3) The second machining allowance of the sputtering surface bevel of the semi-finished alloy target material in step (2) is finely ground using a columnar diamond grinding head with a feed amount of 0.01 to 0.05 mm to obtain a finished alloy target material with a sputtering surface bevel.

[0061] Compared with the prior art, the present invention has at least the following beneficial effects:

[0062] (1) The present invention provides a method for grinding an alloy target material having a sputtering surface bevel. The method divides the bevel grinding process into three stages: rough grinding, semi-finishing grinding and finishing grinding. The sputtering surface bevel angle is adjusted before the semi-finishing grinding, thereby ensuring a relatively low flatness of the finished alloy target material. At the same time, the diameter deviation of the sputtering surface plane of the finished alloy target material is relatively low, thereby reducing the occurrence of chipping, cracking and slag falling, and improving the quality and stability of the finished alloy target material.

[0063] (2) The present invention provides a method for grinding an alloy target material having a sputtering surface bevel. The method further reduces the diameter deviation of the sputtering surface plane of the finished alloy target material by further adjusting the process parameters such as the grinding head shape and feed rate and grinding thickness in each process stage, preferably to below 0.5 mm, thereby further avoiding the occurrence of chipping, cracking and slag falling, and providing a target grinding method with great application potential in the field of semiconductor sputtering targets. BRIEF DESCRIPTION OF THE DRAWINGS

[0064] Figure 1 1 is a schematic diagram of the front view structure of the tungsten-silicon alloy target blank in the grinding method described in Example 1 of the present invention;

[0065] Figure 2 It is an enlarged view of the Z position of the tungsten-silicon alloy target material after the rough grinding process in the grinding method described in Example 1 of the present invention, and the magnification is 4 times;

[0066] Figure 3 An enlarged view of the Z portion of the tungsten-silicon alloy target after the semi-finishing grinding process in the grinding method described in Example 1 of the present invention, with a magnification of 3 times;

[0067] Figure 4 is a schematic diagram of reducing the angle during the semi-finishing grinding process in the grinding method of the present invention;

[0068] Figure 5 is a schematic diagram of the angle being adjusted larger during the semi-finishing grinding process in the grinding method of the present invention;

[0069] In the figure: 1. tungsten-silicon alloy target blank; 2. backing plate; 3. first measuring area; 4. first area to be ground and removed; 5. first machining allowance; 6. second area to be ground and removed; 7. second measuring area; 8. second machining allowance. DETAILED DESCRIPTION

[0070] The technical solution of the present invention is further described below in conjunction with the accompanying drawings and through specific implementation methods. However, the following examples are only simplified examples of the present invention and do not represent or limit the scope of protection of the present invention. The scope of protection of the present invention shall be subject to the claims.

[0071] In the following embodiments and comparative examples, the initial sputtering surface bevel angle is 15°.

[0072] 1. Implementation

[0073] Example 1

[0074] This embodiment provides a method for grinding a tungsten-silicon alloy target material having a sputtering surface slope, such as Figure 1 to Figure 3 As shown; the grinding method comprises the following steps:

[0075] (1) a tungsten silicon alloy target blank is subjected to external cylindrical grinding using a tree-shaped diamond grinding head, with a feed amount of 0.05 mm; the tool setting position of the external cylindrical grinding is the maximum external cylindrical position of the sputtering surface plane of the tungsten silicon alloy target blank; the tungsten silicon alloy target blank includes a tungsten silicon alloy target blank 1 and a backing plate 2;

[0076] (2) performing a first measurement on the flatness of the sputtering surface of the tungsten-silicon alloy target after the cylindrical grinding in step (1) to determine the bevel angle of the sputtering surface; the first measurement area 3 of the first measurement is a circular area with a straight line distance of 20 mm from the maximum outer circle position of the sputtering surface of the tungsten-silicon alloy target after the cylindrical grinding to the expected sputtering surface sharp angle close to the center of the sputtering surface plane;

[0077] Then, the tungsten-silicon alloy target material after the cylindrical grinding is beveled to remove the area to be ground and removed to obtain the sputtering surface bevel; the ratio of the total thickness of the outermost edge of the area to be ground and removed to the thickness of the tungsten-silicon alloy target blank 1 in the tungsten-silicon alloy target material blank is 0.7:1; the edge of the tungsten-silicon alloy target material after the cylindrical grinding is firstly rough-ground with an umbrella-shaped diamond grinding head to grind and remove the first area to be ground and removed 4, and the feed amount is 0.08mm; the ratio of the thickness of the outermost edge of the first area to be ground and removed 4 to the total thickness of the outermost edge of the area to be ground and removed is 0.5:1; the first machining allowance 5 of the sputtering surface bevel obtained after the rough grinding is 0.2mm;

[0078] The second measurement of the flatness of the rough-ground tungsten-silicon alloy target material yields x of 0.25 mm; the second measurement area 7 of the second measurement is the annular area from the maximum outer circle position of the sputtering surface plane of the rough-ground alloy target material to the straight line distance of 10 mm close to the center of the sputtering surface plane;

[0079] Since the measured diameter (D408.564 mm) of the sputtering surface plane of the rough-ground tungsten-silicon alloy target is larger than the theoretical diameter (D406.600 mm) of the finished sputtering surface plane of the alloy target, the sputtering surface bevel angle is reduced by 0.72° (i.e., the sputtering surface bevel angle is 14.28° after adjustment);

[0080] Then, according to the above-adjusted sputtering surface bevel angle, the remaining area to be ground and removed after the rough grinding of the tungsten-silicon alloy target material is semi-finely ground using an umbrella-shaped diamond grinding head to grind and remove the second area to be ground and removed 6, and the feed amount is 0.05 mm to obtain a semi-finished tungsten-silicon alloy target material, and the second machining allowance 8 of the sputtering surface bevel of the semi-finished tungsten-silicon alloy target material is 0.20 mm;

[0081] (3) The second machining allowance 8 of the sputtering surface bevel of the semi-finished tungsten-silicon alloy target material in step (2) is finely ground using a cylindrical diamond grinding head with a feed amount of 0.03 mm to obtain a finished tungsten-silicon alloy target material with a sputtering surface bevel.

[0082] Example 2

[0083] This embodiment provides a method for grinding a tungsten-silicon alloy target material having a sputtering surface slope, the grinding method comprising the following steps:

[0084] (1) The tungsten silicon alloy target blank is subjected to external cylindrical grinding using a tree-shaped diamond grinding head with a feed amount of 0.02 mm; the tool setting position of the external cylindrical grinding is the maximum external cylindrical position of the sputtering surface plane of the tungsten silicon alloy target blank;

[0085] (2) performing a first measurement on the flatness of the sputtering surface of the tungsten-silicon alloy target after the cylindrical grinding in step (1) to determine the bevel angle of the sputtering surface; the first measurement area of ​​the first measurement is a circular area with a straight line distance of 15 mm from the maximum outer circle position of the sputtering surface of the tungsten-silicon alloy target after the cylindrical grinding to the expected sputtering surface sharp angle close to the center of the sputtering surface plane;

[0086] Then, the tungsten-silicon alloy target material after the cylindrical grinding is beveled to remove the area to be ground and removed to obtain the sputtering surface bevel; the ratio of the total thickness of the outermost edge of the area to be ground and removed to the thickness of the tungsten-silicon alloy target blank in the tungsten-silicon alloy target blank is 0.5:1; the edge of the tungsten-silicon alloy target material after the cylindrical grinding is firstly rough-ground with an umbrella-shaped diamond grinding head to grind and remove the first area to be ground and removed, and the feed amount is 0.05mm; the ratio of the thickness of the outermost edge of the first area to be ground and removed to the total thickness of the outermost edge of the area to be ground and removed is 0.35:1; the first machining allowance of the sputtering surface bevel obtained after the rough grinding is 0.25mm;

[0087] A second measurement is performed on the flatness of the rough-ground tungsten-silicon alloy target material, and the flatness is 0.2 mm; the second measurement area of ​​the second measurement is a circular area with a straight line distance of 8 mm from the maximum outer circle position of the sputtering surface plane of the rough-ground alloy target material to the center of the sputtering surface plane;

[0088] Since the measured diameter (D405.164 mm) of the sputtering surface plane of the rough-ground tungsten-silicon alloy target is smaller than the theoretical diameter (D406.600 mm) of the finished sputtering surface plane of the alloy target, the sputtering surface bevel angle is increased by 0.57° (i.e., the sputtering surface bevel angle is 15.57° after adjustment);

[0089] Then, the tungsten-silicon alloy target material after the rough grinding is semi-finished by using an umbrella-shaped diamond grinding head according to the adjusted sputtering surface bevel angle to grind and remove the second area to be ground and removed, and the feed amount is 0.03 mm to obtain a semi-finished tungsten-silicon alloy target material, and the second machining allowance of the sputtering surface bevel of the semi-finished tungsten-silicon alloy target material is 0.25 mm;

[0090] (3) The second machining allowance of the sputtering surface bevel of the semi-finished tungsten-silicon alloy target material in step (2) is finely ground using a cylindrical diamond grinding head with a feed amount of 0.01 mm to obtain a finished tungsten-silicon alloy target material with a sputtering surface bevel.

[0091] Example 3

[0092] This embodiment provides a method for grinding a tungsten-silicon alloy target material having a sputtering surface slope, the grinding method comprising the following steps:

[0093] (1) The tungsten silicon alloy target blank is subjected to external cylindrical grinding using a tree-shaped diamond grinding head with a feed amount of 0.08 mm; the tool setting position of the external cylindrical grinding is the maximum external cylindrical position of the sputtering surface plane of the tungsten silicon alloy target blank;

[0094] (2) performing a first measurement on the flatness of the sputtering surface of the tungsten-silicon alloy target after the cylindrical grinding in step (1) to determine the bevel angle of the sputtering surface; the first measurement area of ​​the first measurement is a circular area with a straight line distance of 18 mm from the maximum outer circle position of the sputtering surface of the tungsten-silicon alloy target after the cylindrical grinding to the expected sputtering surface sharp angle close to the center of the sputtering surface plane;

[0095] Then, the tungsten-silicon alloy target material after the cylindrical grinding is beveled to remove the area to be ground and removed to obtain the sputtering surface bevel; the ratio of the total thickness of the outermost edge of the area to be ground and removed to the thickness of the tungsten-silicon alloy target blank in the tungsten-silicon alloy target blank is 0.8:1; the edge of the tungsten-silicon alloy target material after the cylindrical grinding is firstly rough-ground with an umbrella-shaped diamond grinding head to grind and remove the first area to be ground and removed, and the feed amount is 0.11mm; the ratio of the thickness of the outermost edge of the first area to be ground and removed to the total thickness of the outermost edge of the area to be ground and removed is 0.75:1; the first machining allowance of the sputtering surface bevel obtained after the rough grinding is 0.15mm;

[0096] A second measurement is performed on the flatness of the rough-ground tungsten-silicon alloy target material, and the flatness is 0.15 mm; the second measurement area of ​​the second measurement is a circular area with a linear distance of 12 mm from the maximum outer circle position of the sputtering surface plane of the rough-ground alloy target material to the center of the sputtering surface plane;

[0097] Since the measured diameter (D407.754 mm) of the sputtering surface plane of the rough-ground tungsten-silicon alloy target is larger than the theoretical diameter (406.600 mm) of the finished sputtering surface plane of the alloy target, the sputtering surface bevel angle is reduced by 0.43° (i.e., the sputtering surface bevel angle is 14.57° after adjustment);

[0098] Then, the tungsten-silicon alloy target material after the rough grinding is semi-finished by using an umbrella-shaped diamond grinding head according to the adjusted sputtering surface bevel angle to grind and remove the second area to be ground and removed, and the feed amount is 0.08 mm to obtain a semi-finished tungsten-silicon alloy target material, and the second machining allowance of the sputtering surface bevel of the semi-finished tungsten-silicon alloy target material is 0.15 mm;

[0099] (3) The second machining allowance of the sputtering surface bevel of the semi-finished tungsten-silicon alloy target material in step (2) is finely ground using a cylindrical diamond grinding head with a feed amount of 0.05 mm to obtain a finished tungsten-silicon alloy target material with a sputtering surface bevel.

[0100] Example 4

[0101] The present embodiment provides a method for grinding a tungsten-silicon alloy target having a sputtering surface bevel, the grinding method is the same as that of Embodiment 1 except that in step (2), the ratio of the total thickness of the outermost edge of the area to be ground and removed to the thickness of the alloy target blank in the alloy target blank is 1:1.

[0102] Example 5

[0103] This embodiment provides a method for grinding a tungsten-silicon alloy target having a sputtering surface bevel. The grinding method is the same as that of Embodiment 1 except that the feed amount of the rough grinding process in step (2) is 0.13 mm.

[0104] Example 6

[0105] This embodiment provides a method for grinding a tungsten-silicon alloy target having a sputtering surface bevel. The grinding method is the same as that of Embodiment 1 except that the feed amount of the rough grinding process in step (2) is 0.03 mm.

[0106] Example 7

[0107] The present embodiment provides a method for grinding a tungsten-silicon alloy target having a sputtering surface bevel. The grinding method is the same as that of Embodiment 1 except that in step (2), the ratio of the thickness of the outermost edge of the first area to be ground and removed to the total thickness of the outermost edge of the area to be ground and removed is 0.9:1.

[0108] Example 8

[0109] This embodiment provides a method for grinding a tungsten-silicon alloy target having a sputtering surface bevel. The grinding method is the same as that of Embodiment 1 except that the feed amount of the semi-finishing grinding process in step (2) is 0.1 mm.

[0110] Example 9

[0111] This embodiment provides a method for grinding a tungsten-silicon alloy target having a sputtering surface bevel. The grinding method is the same as that of Embodiment 1 except that the feed amount of the semi-finishing grinding process in step (2) is 0.01 mm.

[0112] 2. Comparison

[0113] Comparative Example 1

[0114] This comparative example provides a method for grinding a tungsten-silicon alloy target having a sputtering surface bevel. The grinding method is the same as Example 1 except that the bevel is ground once according to the theoretical size.

[0115] Comparative Example 2

[0116] This comparative example provides a method for grinding a tungsten-silicon alloy target having a sputtering surface bevel. The grinding method is the same as Example 1 except that the sputtering surface bevel angle is not adjusted before the semi-fine grinding treatment in step (2), but the grinding is directly continued according to the sputtering surface plane angle before the rough grinding treatment.

[0117] 3. Test and its results

[0118] The plane diameter of the sputtering surface of the finished tungsten-silicon alloy target obtained in the above embodiment and comparative example was compared with the theoretical plane diameter of the sputtering surface and the diameter deviation was calculated, and the appearance morphology was observed to see whether there was corner chipping or slag falling. The results are shown in Table 1.

[0119] Table 1

[0120]

[0121]

[0122] From Table 1 we can see that:

[0123] (1) It can be seen from Examples 1 to 3 that the grinding method of the alloy target with a sputtering surface bevel provided by the present invention is particularly for a tungsten-silicon alloy target. By dividing the bevel grinding process into stages, adjusting the sputtering surface bevel angle in time, and selecting a suitable feed rate in each processing stage, the plane diameter deviation of the sputtering surface of the finished tungsten-silicon alloy target is reduced to less than 0.5 mm, and the occurrence of chipping and slag is avoided.

[0124] (2) Combining Example 1 with Example 4 and Example 7, it can be seen that the finished tungsten silicon alloy target materials obtained in Example 4 and Example 7 have serious chipping, cracking and slag, and the sputtering surface diameter deviation is large; this shows that the present invention further preferably has a ratio of the total thickness of the outermost edge of the area to be ground and removed to the thickness of the alloy target blank in the alloy target blank of (0.5-0.8):1, and further preferably has a ratio of the thickness of the outermost edge of the rough grinding treatment and the total thickness of the outermost edge of the area to be ground and removed of (0.35-0.75):1; this can prevent the contact position between the sputtering surface slope and the back plate from being too thin to cause chipping, cracking and slag, and further reduce the sputtering surface diameter deviation.

[0125] (3) Combining Example 1 with Example 5 to Example 6, it can be seen that the diameter deviation of the finished tungsten-silicon alloy target material obtained in Example 5 is relatively large, which is 1.12 mm, and the surface is rough, and there are corner chipping and slag falling. The diameter deviation of the finished tungsten-silicon alloy target material obtained in Example 6 is relatively small, which is 0.43 mm. Although the surface is smooth, there is no corner chipping and no slag falling, the processing efficiency is greatly reduced, which is reduced by 166%. This shows that the present invention further prefers that the feed amount of the rough grinding treatment is 0.05-0.11 mm, which further reduces the diameter deviation of the finished tungsten-silicon alloy target material and avoids corner chipping, cracking and slag falling.

[0126] (4) Combining Example 1 with Examples 8 to 9, it can be seen that the diameter deviation of the finished tungsten-silicon alloy target material obtained in Example 8 is relatively large, which is 0.75 mm, and the surface appearance is rough, with chipping and slag. The diameter deviation of the finished tungsten-silicon alloy target material obtained in Example 9 is relatively small, which is 0.43 mm. Although the surface appearance is smooth, without chipping and slag, the processing efficiency is reduced by 400%. This shows that the present invention further prefers that the feed amount of the semi-finishing treatment is 0.03-0.08 mm, which further improves the quality and stability of the finished tungsten-silicon alloy target material.

[0127] (5) It can be seen from the combination of Example 1 and Comparative Example 2 that: since the grinding method described in Comparative Example 1 performs grinding according to the theoretical size at one time except for the bevel grinding, the diameter deviation of the obtained tungsten silicon alloy target product is too large, and the appearance has corner chipping and the like, and the scrap rate is increased; since the grinding method described in Comparative Example 2 does not adjust the bevel angle of the sputtering surface before the semi-finishing grinding treatment except for step (2), the flatness of the semi-finished tungsten silicon alloy target cannot be guaranteed, the diameter deviation is too large, and the appearance is prone to corner chipping and the like; this shows that the bevel grinding treatment in the grinding method of the present invention is carried out in three stages: rough grinding treatment, semi-finishing grinding treatment and fine grinding treatment, and the bevel angle of the sputtering surface is adjusted before the semi-finishing grinding treatment, thereby ensuring the flatness of the tungsten silicon alloy target product and its diameter deviation and appearance.

[0128] The applicant declares that the above is only a specific implementation mode of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily thought of by those skilled in the art within the technical scope disclosed by the present invention shall fall within the protection scope and disclosure scope of the present invention.

Claims

1. A method for grinding an alloy target having a sputtering surface slope, characterized in that: The grinding method comprises the following steps: The alloy target blank is subjected to cylindrical grinding and bevel grinding in sequence; the bevel grinding includes sequentially performing rough grinding, semi-finishing grinding and finishing grinding on the edge of the alloy target after cylindrical grinding to remove the area to be ground and removed to obtain a sputtering surface bevel; before the semi-finishing grinding, the sputtering surface bevel angle is adjusted; and a finished alloy target with a sputtering surface bevel is obtained.

2. The grinding method according to claim 1, characterized in that: The area to be removed by grinding includes a first area to be removed by grinding and a second area to be removed by grinding; Preferably, the ratio of the total thickness of the outermost edge of the area to be ground and removed to the thickness of the alloy target blank in the alloy target material blank is (0.5-0.8):

1.

3. The grinding method according to claim 1 or 2, characterized in that: The grinding head of the grinding tool used for the cylindrical grinding includes a tree-shaped diamond grinding head; Preferably, the tool setting position of the cylindrical grinding is the maximum outer circle position of the sputtering surface plane of the alloy target blank; Preferably, the feed rate of the cylindrical grinding is 0.02-0.08 mm.

4. The grinding method according to any one of claims 1 to 3, characterized in that: Before the bevel grinding, a first measurement is performed on the flatness of the sputtering surface of the alloy target after the outer cylindrical grinding to determine the bevel angle of the sputtering surface; Preferably, the first measurement area of ​​the first measurement is a circular area with a straight line distance of 0 to 20 mm from the maximum outer circle position of the sputtering surface of the alloy target after outer circle grinding to the expected sputtering surface corner close to the center of the sputtering surface plane.

5. The grinding method according to any one of claims 1 to 4, characterized in that: The rough grinding process includes grinding and removing the first area to be ground and removed; Preferably, the ratio of the thickness of the outermost edge of the first area to be ground and removed to the total thickness of the outermost edge of the area to be ground and removed is (0.35-0.75):1; Preferably, the grinding head of the grinding tool used in the rough grinding process includes an umbrella-shaped diamond grinding head; Preferably, the feed rate of the rough grinding process is 0.05 to 0.11 mm; Preferably, the first machining allowance of the sputtering surface slope obtained after the rough grinding treatment is 0.5-1.0 mm.

6. The grinding method according to any one of claims 1 to 5, characterized in that: The semi-finishing grinding process includes grinding and removing the second area to be ground and removed; Preferably, if the measured diameter of the sputtering surface plane of the alloy target material after the rough grinding process is larger than the theoretical diameter of the sputtering surface plane of the finished alloy target material, the sputtering surface bevel angle is reduced; Preferably, if the measured diameter of the sputtering surface plane of the alloy target after the rough grinding process is smaller than the theoretical diameter of the sputtering surface plane of the finished alloy target, the sputtering surface bevel angle is increased.

7. The grinding method according to any one of claims 1 to 6, characterized in that: The sputtering surface flatness, sputtering surface plane diameter change and sputtering surface bevel angle change of the alloy target after the rough grinding treatment conform to the following formula: Among them, x is the flatness of the sputtering surface of the alloy target after the rough grinding treatment, in mm; y is the change in the plane diameter of the sputtering surface of the alloy target after the rough grinding treatment, in mm; z is the change in the bevel angle of the sputtering surface of the alloy target after the rough grinding treatment, in degrees.

8. The grinding method according to any one of claims 1 to 7, characterized in that: After the semi-finishing grinding, a semi-finished alloy target is obtained, and the second machining allowance of the sputtering surface slope of the semi-finished alloy target is 0.15-0.25 mm.

9. The grinding method according to any one of claims 1 to 8, characterized in that: The grinding head of the grinding tool used in the semi-finishing process includes an umbrella-shaped diamond grinding head; Preferably, the feed rate of the semi-finishing grinding process is 0.03-0.08 mm.

10. The grinding method according to any one of claims 1 to 9, characterized in that: The fine grinding process includes grinding away a second machining allowance of the sputtering surface bevel of the semi-finished alloy target material to obtain a finished alloy target material having a sputtering surface bevel; Preferably, the grinding head of the grinding tool used in the fine grinding process includes a columnar diamond grinding head; Preferably, the feed rate of the fine grinding process is 0.01-0.05 mm.

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