Antibacterial composite material, antibacterial wafer cutting fluid and preparation method and application thereof

Abstract

The present invention provides an antibacterial composite material, an antibacterial wafer cutting liquid, and a preparation method and application thereof, wherein the antibacterial composite material comprises a divalent metal antibacterial agent and an organic antibacterial agent. The antibacterial wafer cutting liquid comprises the following components in weight proportion: 5-10 parts of a surfactant; 0.01-0.1 parts of a defoaming agent; 2-5 parts of a dispersant; 0.1-0.5 parts of a pH regulator; 1-2 parts of an antibacterial composite material; and 70-85 parts of ultrapure water. The antibacterial wafer cutting liquid containing the antibacterial composite material has good wetting and cleaning properties during the wafer cutting process, and also has the effects of reducing corrosion, silicon powder residue, and chip collapse after cutting, and can especially significantly reduce the problem of bacteria in the cutting liquid during use, thereby improving the efficiency and quality of silicon wafer cutting.

Description

Technical Field

[0001] The invention relates to wafer cutting fluid technology, and in particular to an antibacterial composite material, an antibacterial wafer cutting fluid, and a preparation method and application thereof. Background Art

[0002] A wafer is a silicon chip used in the manufacture of silicon semiconductor integrated circuits. Due to its round shape, it is named a wafer and serves as the basic material for manufacturing integrated circuits (ICs). Silicon wafers can be processed into various circuit element structures to become integrated circuit products with specific electrical functions. In the process of laser cutting semiconductor wafers, it is necessary to build a variety of circuits on their surface and undergo surface processing to complete the cutting of wafers and the manufacture of chips. In the production process of semiconductor chips, the cutting link is an indispensable and key step. In the process of manufacturing wafers, this is a subsequent step, and the complete wafer needs to be divided into separate chips (ie, grains) according to the size of the chip. This process is called wafer dicing.

[0003] During the cutting process, there are often some residual particles that may adhere to the surface or sidewalls of the wafer. Once these residual particles come into contact with the wafer, they are difficult to completely remove during the subsequent cleaning process. If the residual particles in the welding area are not thoroughly cleaned, the risk of metal corrosion will also increase. In order to reduce the surface damage of the semiconductor wafer after cutting and improve the cleanliness of the chip, the entire cutting process needs to be completed in a cutting fluid environment.

[0004] Wafer cutting fluid in the prior art is usually stored for a long time and is prone to breed bacteria during use, resulting in silicon powder residue and corrosion, thereby affecting chip performance and reducing product reliability and yield.

[0005] Therefore, researching and developing a cutting fluid that inhibits or reduces bacterial growth after long-term storage and ensuring the effectiveness of the wafer cutting fluid during long-term storage has profound significance for the future development of semiconductor chip processing and packaging technology. Summary of the invention

[0006] In view of the problem that the existing wafer cutting fluid is easy to breed bacteria during use, which affects the chip performance and reduces the reliability and yield of the product, the purpose of the present invention is to propose an organic phosphonic acid polymer, and use the organic phosphonic acid polymer to prepare a divalent metal antibacterial agent, and add the divalent metal antibacterial agent to the antibacterial wafer cutting fluid. The antibacterial wafer cutting fluid containing the antibacterial composite material can significantly reduce the problem of bacteria in the cutting fluid during use during the wafer cutting process, and has the effect of reducing corrosion, silicon powder residue and chip collapse after cutting, and also has good wetting and cleaning performance, thereby improving the efficiency and quality of silicon wafer cutting. The present invention is of great significance in promoting the upgrading of the chip industry and improving product quality.

[0007] It should be noted that, in the present invention, unless otherwise specified, the specific meaning of "including" in relation to composition limitations and descriptions includes both open-ended "including", "comprising", etc. and similar meanings, as well as closed-ended "composed of", "composed of", etc. and similar meanings.

[0008] To achieve the above purpose, the technical solution adopted by the present invention is: an organic phosphonic acid polymer is prepared by the following method: calcium chloride, 2-hydroxyphosphonoacetic acid and deionized water are mixed, the pH is adjusted to 3-5, sealed and reacted at 120-140°C for 1-3 days, and naturally cooled to room temperature after the reaction is completed to obtain an organic phosphonic acid polymer.

[0009] Furthermore, the mass ratio of the calcium chloride, 2-hydroxyphosphonoacetic acid and deionized water is 0.05-1:0.1-0.2:8-12.

[0010] Furthermore, hydrochloric acid was used to adjust the pH.

[0011] Furthermore, after adjusting the pH, stirring is performed for 0.5-1 h, and a sealed reaction is performed at 120-140° C. in a hydrothermal reactor.

[0012] The invention utilizes hydrothermal synthesis technology to interconnect calcium chloride and 2-hydroxyphosphonoacetic acid organic ligands containing carboxyl and hydroxyl functional groups through self-assembly to form a porous polymer with a periodic pore structure, namely, an organic phosphonic acid polymer.

[0013] Another object of the present invention is to disclose the application of the organic phosphonic acid polymer in the field of preparing antibacterial agents.

[0014] Another object of the present invention is to disclose a divalent metal antibacterial agent, which is prepared by the following method: adding the organic phosphonic acid polymer to a divalent metal salt solution, adjusting the pH value to 4-6, stirring for 1-1.5 hours, filtering, and drying the filter cake obtained by filtration to obtain the divalent metal antibacterial agent.

[0015] Furthermore, the mass ratio of the organic phosphonic acid polymer to the divalent metal salt solution is 5-15:85-95.

[0016] Furthermore, the divalent metal in the divalent metal salt solution is one or more of Mn, Mg, Zn, Ni, Co and Fe.

[0017] Furthermore, the divalent metal is preferably manganese, that is, the divalent metal antibacterial agent is a manganese ion antibacterial agent.

[0018] Furthermore, the divalent metal salt solution is a divalent metal sulfuric acid solution.

[0019] Furthermore, the divalent metal salt solution is preferably a manganese sulfate solution.

[0020] Furthermore, the divalent metal salt solution includes, by mass, 0.2-0.5 parts of divalent metal salt and 99.5-99.8 parts of deionized water.

[0021] Furthermore, hydrochloric acid and / or acetic acid are used to adjust the pH value.

[0022] Furthermore, hydrochloric acid is preferably used to adjust the pH value.

[0023] Furthermore, the drying temperature is 75-85°C.

[0024] Another object of the present invention is to disclose an antibacterial composite material, comprising the divalent metal antibacterial agent and an organic antibacterial agent.

[0025] Furthermore, the mass ratio of the divalent metal antibacterial agent to the organic antibacterial agent is 1:2-1:7.

[0026] Furthermore, the organic antibacterial agent is preferably an alcohol antibacterial agent.

[0027] Furthermore, the alcohol antibacterial agent is methylpropanediol and / or n-tridecanol.

[0028] Furthermore, the alcohol antibacterial agent is preferably methylpropylene glycol.

[0029] Furthermore, the divalent metal antibacterial agent is a manganese ion antibacterial agent.

[0030] Furthermore, the antibacterial composite material comprises a manganese ion antibacterial agent and methyl propanediol in a mass ratio of 1:2-1:7.

[0031] Furthermore, the antibacterial composite material comprises a manganese ion antibacterial agent and methyl propanediol in a mass ratio preferably of 1:3-1:5.

[0032] Another object of the present invention is to disclose a method for preparing an antibacterial composite material, comprising the following steps: weighing each component according to mass fraction, and mixing them to obtain the antibacterial composite material.

[0033] Another object of the present invention is to disclose an application of an antibacterial composite material in the field of wafer cutting fluid.

[0034] Another object of the present invention is to disclose an antibacterial wafer cutting fluid, comprising the antibacterial composite material.

[0035] Furthermore, the antibacterial composite material accounts for 1-2.2% of the total mass of the antibacterial wafer cutting fluid.

[0036] Furthermore, the antibacterial wafer cutting fluid comprises the following components in weight proportion:

[0037]

[0038] Furthermore, the surfactant is a nonionic surfactant.

[0039] Furthermore, the surfactant is one or more of fatty alcohol polyoxyethylene ether, fatty acid polyoxyethylene ester and alkylphenol polyoxyethylene ether.

[0040] Furthermore, the fatty alcohol polyoxyethylene ether is preferably AEO-7 or AEO-8;

[0041] The fatty acid polyoxyethylene ester is preferably PEG-400 or PEG600;

[0042] The alkylphenol polyoxyethylene ether is preferably OP-10.

[0043] Furthermore, the surfactant is preferably fatty alcohol polyoxyethylene ether, more preferably AEO-7.

[0044] Furthermore, the surfactant is 5-8 parts.

[0045] Furthermore, the defoaming agent is one or more of GP330 defoaming agent, GPE polyether defoaming agent and polypropylene glycol.

[0046] Furthermore, the defoaming agent is preferably GP330 defoaming agent.

[0047] Furthermore, the defoaming agent is 0.02-0.05 parts.

[0048] Furthermore, the dispersant is one or more of acrylic acid maleic anhydride, sodium polyacrylate, carboxymethyl cellulose, polyvinyl alcohol, polyethylene glycol and polyvinyl pyrrolidone.

[0049] Furthermore, the dispersant is 3.5-4.5 parts.

[0050] Furthermore, the pH adjuster is one or more of hydrochloric acid, acetic acid, nitric acid, phosphoric acid and iodic acid.

[0051] Furthermore, the pH adjuster is preferably hydrochloric acid and / or acetic acid.

[0052] Furthermore, the pH adjuster is 0.15-0.4 parts.

[0053] Furthermore, the antibacterial composite material is 1-1.8 parts.

[0054] Furthermore, the ultrapure water is 75-80 parts.

[0055] Another object of the present invention is to disclose a method for preparing an antibacterial wafer cutting fluid, comprising the following steps:

[0056] Under stirring, ultrapure water, surfactant, dispersant, defoamer, pH regulator and antibacterial composite material are mixed until all materials are completely dissolved to prepare an antibacterial wafer cutting fluid.

[0057] Furthermore, the preparation method of the antibacterial wafer cutting fluid includes the following steps: first, ultrapure water is added into a reactor, stirred at a speed of 200-300 rpm, a surfactant is added and mixed and stirred for 5-15 minutes; a dispersant is added and stirred for 2-6 minutes; a defoaming agent is added and stirred for 5-15 minutes; a pH adjuster is added and stirred for 2-6 minutes; an antibacterial composite material is added and stirred for 30-60 minutes, and mixed until all materials are completely dissolved to prepare an antibacterial wafer cutting fluid.

[0058] Another object of the present invention is to disclose an application of an antibacterial wafer cutting fluid in the field of wafer cutting.

[0059] Compared with the prior art, the antibacterial wafer cutting fluid of the present invention, its preparation method and application have the following advantages:

[0060] 1) The present invention uses a hydrothermal method to prepare an organic phosphonic acid polymer, which has the advantages of rich pore structure and large specific surface area and can load more divalent metal ions, such as manganese ions.

[0061] 2) The present invention prepares a divalent metal antibacterial agent with an organic phosphonic acid polymer as a carrier by manganese sulfate and an organic phosphonic acid polymer. For example, the manganese ion antibacterial agent can release manganese ions when electrolyzed in an aqueous medium. These free manganese ions can attach to the cell wall of bacteria, destroy the protein in the bacterial cells, damage the bacterial cell wall, and destroy the original structure of the cell, thereby enhancing the antibacterial effect.

[0062] 3) The present invention obtains an antibacterial composite material by combining a plurality of antibacterial agents. Taking the combination of manganese ion antibacterial agent and methyl propanediol as an example, methyl propanediol, as an organic antibacterial agent, can denature proteins, thereby causing the death of microorganisms, and can also invade microbial cells, release the water film on the surface of proteins, and cause the microorganisms to lose activity. Manganese ion antibacterial agents have a bacteriolytic effect, which can destroy the integrity of microbial cell membranes and cause the death of microorganisms. The present invention obtains an antibacterial composite material by compounding a plurality of antibacterial agents, which has the characteristics of fast sterilization speed and strong sterilization ability, and can significantly improve the antibacterial properties of wafer cutting fluid.

[0063] 4) The present invention can effectively prevent the growth of bacteria in the wafer cutting fluid by adding an antibacterial composite material to the wafer cutting fluid, ensuring that the wafer cutting fluid can still be used normally after being stored for one year, and ensuring the wetting and cleaning properties of the wafer cutting fluid. At the same time, the organic phosphonic acid polymer can be used as a metal ion stabilizer to effectively stabilize Fe in water. 2+ , Fe 3+ , Mn 2+ , Al 3+ Plasma can significantly reduce problems such as electrochemical corrosion, silicon powder residue and chip edge collapse after cutting, thereby improving the efficiency and quality of silicon wafer cutting.

[0064] In summary, the main components of the antibacterial wafer cutting fluid of the present invention include surfactants, antibacterial composite materials and other functional substances, which can significantly reduce the problem of bacterial growth in the cutting fluid during use, while ensuring good wetting, cleaning and electrochemical properties during the wafer cutting process, and also have the effect of reducing corrosion, silicon powder residue and chip edge collapse after cutting, thereby improving the efficiency and quality of silicon wafer cutting. The wafer cutting fluid of the present invention has very good application prospects and large-scale industrial promotion potential in the field of semiconductor chip cutting. BRIEF DESCRIPTION OF THE DRAWINGS

[0065] Figure 1 It is the total bacterial colony test piece of the wafer dicing liquid diluted 3000 times at 72h in Example 7;

[0066] Figure 2 This is a total bacterial colony test piece of the wafer dicing liquid diluted 3000 times in 48h in Example 5;

[0067] Figure 3 This is a total bacterial colony test piece of the wafer dicing liquid diluted 3000 times in 48h in Example 4;

[0068] Figure 4 The wafer surface is observed with a metallographic microscope at a magnification of 411 times after cutting with the wafer cutting liquid diluted 3000 times at 72 hours in Example 7;

[0069] Figure 5The wafer surface magnified 293 times by metallographic microscope observation after cutting with the wafer cutting liquid diluted 3000 times in 48 hours in Example 4;

[0070] Figure 6 The cleaning effect of the wafer cutting liquid diluted 3000 times in 72h in Example 7 is magnified 469 times by a metallographic microscope;

[0071] Figure 7 The cleaning effect of the wafer cutting liquid diluted 3000 times in 48 hours in Example 5 is magnified 930 times by a metallographic microscope;

[0072] Figure 8 is the infrared spectrum of the organic phosphonic acid polymer of Example 1;

[0073] Fig. 9 is a specific surface area diagram of the organic phosphonic acid polymer of Example 1;

[0074] Fig.10 This is the pore size distribution diagram of the organic phosphonic acid polymer in Example 1. DETAILED DESCRIPTION

[0075] The present invention is further described below with reference to the examples. The description of the technical features described below is based on representative embodiments and specific examples of the present invention, but the present invention is not limited to these embodiments and specific examples. It should be noted that:

[0076] Unless otherwise stated, the units used in this specification are all international standard units, and the numerical values ​​and numerical ranges appearing in the present invention should be understood to include the inevitable systematic errors in industrial production.

[0077] In this specification, the numerical range expressed using "a numerical value A to a numerical value B" means a range including the endpoints numerical values ​​A and B.

[0078] In the present specification, a numerical range expressed using "above" or "below" means a numerical range including the number.

[0079] In this specification, the word "may" means both performing a certain process and not performing a certain process.

[0080] In this specification, the use of "optional" or "optional" indicates that certain substances, components, execution steps, application conditions and other factors are used or not used.

[0081] In this specification, when "normal temperature" or "room temperature" is used, the temperature may be 15-25°C.

[0082] In this manual, the reagents or instruments used without indicating the manufacturer are all conventional products that can be obtained through commercial purchase.

[0083] Examples 1-3

[0084] Examples 1-3 disclose various organic phosphonic acid polymers prepared by the following method:

[0085] Calcium chloride, 2-hydroxyphosphonoacetic acid and deionized water were mixed, and the pH was adjusted to 5 with hydrochloric acid, and then sealed in a hydrothermal reactor and reacted at 130° C. for 2 days. After the reaction was completed, it was naturally cooled to room temperature to obtain an organic phosphonic acid polymer. The mass parts of the raw materials used in the above preparation are shown in Table 1.

[0086] Table 1 Raw materials and weight fractions of organic phosphonic acid polymers of Examples 1-3

[0087]

[0088] Figure 8 This is the infrared spectrum of the organic phosphonic acid polymer of Example 1. It can be seen that at 3447 cm -1 There is a strong absorption peak at 1610 cm -1 The characteristic peaks of -1 The range is the characteristic peak of O3PC, at 534cm in the low wave number region -1 The characteristic peaks of the samples were split, indicating that the sample was crystallized and the organophosphate polymer was successfully synthesized.

[0089] The present invention utilizes hydrothermal synthesis technology to connect calcium chloride and 2-hydroxyphosphonoacetic acid organic ligands containing carboxyl and hydroxyl functional groups through self-assembly to form a porous polymer with a periodic pore structure. The specific surface area and porous properties of the organic phosphonic acid polymer are tested by nitrogen adsorption method. The test results are as follows: Fig. 9 and Fig.10 It can be seen that the specific surface area of ​​the organic phosphonic acid polymer of Example 1 is 174.59 m 2 g -1 , the pore size distribution diagram shows that the mesopores exist between 2-40 nm.

[0090] Embodiment 4-6

[0091] Examples 4-6 disclose a variety of divalent metal antimicrobial agents, which are prepared by the following methods:

[0092] S1: dissolving 0.3 parts of a divalent metal salt in 99.7 parts of deionized water to obtain a divalent metal salt solution with a mass concentration of 0.3 wt %;

[0093] S2: adding the organic phosphonic acid polymer to the divalent metal salt solution, adjusting the pH value to 5 with hydrochloric acid, vigorously stirring for 1.5 hours, filtering, and drying the filter cake obtained by filtration in a drying oven at 80° C. to obtain a divalent metal antibacterial agent with the organic phosphonic acid polymer as a carrier. The mass parts of each raw material are shown in Table 2.

[0094] Table 2 Raw materials and mass parts of manganese ion antibacterial agents in Examples 4-6

[0095]

[0096] Embodiment 7-14

[0097] Examples 7-14 disclose a variety of antibacterial wafer cutting fluids, and the preparation methods thereof are as follows:

[0098] Ultrapure water was added to the reactor, and the surfactant was added in sequence at a stirring speed of 300 rpm for 10 minutes; the dispersant was stirred for 5 minutes; the defoamer was stirred for 10 minutes; the pH adjuster was stirred for 5 minutes; and the antibacterial composite material was stirred for 50 minutes until all the materials were completely dissolved to prepare an antibacterial wafer dicing fluid. The components and weight parts thereof are shown in Table 3.

[0099] Table 3 Components and weight percentages of antibacterial wafer cutting fluids of Examples 7-14

[0100]

[0101] Comparative Examples 1-8

[0102] Comparative Examples 1-8 disclose a variety of wafer cutting fluids, the preparation methods of which are the same as that of Example 1, and the components and weight parts thereof are shown in Table 4.

[0103] Table 4 Components and weight percentages of antibacterial wafer cutting fluids in comparative examples 1-8

[0104]

[0105]

[0106] The silver ion antibacterial agent in Comparative Example 1 is produced by Langyi New Materials Silver ion antimicrobial agent.

[0107] The wafer cutting fluids of Examples 7-14 and Comparative Examples 1-8 were tested respectively, and the test results are shown in Table 5.

[0108] About performance testing and description:

[0109] The test method for the antibacterial effect of performance 1 is:

[0110] Dilute the wafer cutting fluid to 3000 times the sample dilution solution, and add 3M TM Petrifilm TM Place the 6460 total bacterial colony test piece on a flat surface, peel off the upper film, and use a pipette to draw 1 mL of sample solution vertically to the center of the test piece. TM Petrifilm TM The 6460 total bacterial colony test piece was placed in a 35°C oven for incubation, and the bacterial growth was observed at 24 hours, 48 ​​hours, and 72 hours. The test results are shown in Figure 1-3 and Table 5.

[0111] Performance 2 The test method for metal corrosion and cleaning effect is:

[0112] A 12-inch Al Dummy wafer was cut with a wafer cutting machine. The cutting fluid was diluted 3000 times. After cutting, the wafer was placed in the air and the surface corrosion was observed after 12 hours, 24 hours, 48 ​​hours, and 72 hours. The test results are shown in Figure 4-7 and Table 5.

[0113] Table 5 Test data

[0114]

[0115]

[0116] Based on the data in Table 5, it can be seen that the wafer cutting liquid prepared by Examples 7-14 using a combination of a divalent metal antibacterial agent and an organic antibacterial agent was diluted 3000 times and stored for 72 hours without bacteria, corrosion, silicon powder residue, and chip edge collapse after cutting, and can be used normally. When the comparative example 1 uses a combination of a monovalent metal antibacterial agent and an organic antibacterial agent, bacteria are generated after storage for 72 hours, the cleaning effect is poor, and silicon powder residue and edge collapse problems are prone to occur. When the comparative examples 2 and 3 use a combination of a metal antibacterial agent and a natural antibacterial agent, respectively, bacteria are generated after storage for 72 hours, the cleaning effect is poor, and silicon powder residue and edge collapse problems are prone to occur; the cutting liquid of comparative examples 4-8 produces colonies within 48 hours. When bacteria are present in the cutting liquid, no matter how many colonies there are, the cutting liquid will deteriorate, resulting in corrosion, silicon powder residue, and chip edge collapse after cutting, affecting the use effect of the cutting liquid.

[0117] Figure 1 This is the total bacterial colony test piece of the wafer dicing liquid diluted 3000 times at 72h in Example 7. It can be seen in the figure that no bacteria are grown; Figure 2 This is a total bacterial colony test piece of the wafer dicing liquid diluted 3000 times in 48h in Example 5. It can be seen in the figure that colonies have been formed; Figure 3This is a total bacterial colony test piece of the wafer dicing liquid diluted 3000 times in 48h in Example 4. It can be seen in the figure that a large number of colonies have been formed; Figure 4 The wafer surface after cutting with the wafer cutting liquid diluted 3000 times in Example 7 after 72h is observed with a metallographic microscope at a magnification of 411 times. It can be seen in the figure that there is no corrosion on the Al Pad surface of the wafer; Figure 5 The wafer surface is magnified 293 times after being cut by the wafer cutting liquid diluted 3000 times in 48 hours in Example 4. In the figure, the Al Pad part is obviously corroded; Figure 6 This is the cleaning effect of the wafer cutting liquid diluted 3000 times in Example 7 after 72 hours under a metallographic microscope magnified 469 times. No chipping of the cutting edge and silicon powder residue were found in the figure. Figure 7 This is the cleaning effect of the wafer cutting liquid diluted 3000 times in 48 hours in Example 5 under a metallographic microscope magnified 930 times. The figure shows the edge collapse and silicon powder residue in the cutting path.

[0118] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. An organic phosphonic acid polymer, characterized in that The preparation method is as follows: calcium chloride, 2-hydroxyphosphonoacetic acid and deionized water are uniformly mixed, the pH is adjusted to 3-5, sealed and reacted at 120-140° C. for 1-3 days, and naturally cooled to room temperature after the reaction is completed to obtain an organic phosphonic acid polymer.

2. A divalent metal antibacterial agent, characterized in that: The preparation method is as follows: adding the organic phosphonic acid polymer according to claim 1 to a divalent metal salt solution, adjusting the pH value to 4-6, stirring for 1-1.5 hours, filtering by suction, and drying the filter cake obtained by filtration to obtain a divalent metal antibacterial agent.

3. The divalent metal antibacterial agent according to claim 2, characterized in that: The divalent metal in the divalent metal salt solution is one or more of Mn, Mg, Zn, Ni, Co and Fe.

4. An antibacterial composite material, characterized in that: It comprises the divalent metal antibacterial agent and the organic antibacterial agent as claimed in claim 2 or 3.

5. The antibacterial composite material according to claim 4, characterized in that: The antibacterial composite material comprises a manganese ion antibacterial agent and an alcohol antibacterial agent in a mass ratio of 1:2-1:

7.

6. An antibacterial wafer cutting fluid, characterized in that: The invention comprises the antibacterial composite material as claimed in claim 4 or 5.

7. The antibacterial wafer cutting fluid according to claim 6, characterized in that: The antibacterial wafer cutting fluid comprises the following components in weight proportion:

8. The antibacterial wafer cutting fluid according to claim 7, characterized in that: The surfactant is a nonionic surfactant; And / or, the defoamer is one or more of GP330 defoamer, GPE polyether defoamer and polypropylene glycol; and / or, the dispersant is one or more of acrylic acid maleic anhydride, sodium polyacrylate, carboxymethyl cellulose, polyvinyl alcohol, polyethylene glycol and polyvinyl pyrrolidone; And / or, the pH adjuster is one or more of hydrochloric acid, acetic acid, nitric acid, phosphoric acid and iodic acid.

9. A method for preparing the antibacterial wafer cutting fluid according to any one of claims 6 to 8, characterized in that: The method comprises the following steps: mixing ultrapure water, surfactant, dispersant, defoamer, pH regulator and antibacterial composite material under stirring until all materials are completely dissolved to prepare antibacterial wafer cutting fluid.

10. Use of the antibacterial wafer cutting fluid according to any one of claims 6 to 8 in the field of wafer cutting.

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