Silicon carbide single crystal growth crucible

Abstract

The invention discloses a silicon carbide single crystal growth crucible, and relates to the technical field of silicon carbide growth equipment. The crucible comprises a crucible body and a seed crystal, wherein the crucible body comprises a crucible barrel, a single crystal growth ring and a crucible cover. In the manufacturing process of the silicon carbide single crystal, due to the arrangement of the single crystal growth ring structure, when the silicon carbide single crystal grows in the crucible, even if the inner wall of the crucible is crystallized, the silicon carbide single crystal is only crystallized at the single crystal growth ring, so that after the whole growth process is completed, the crucible part except the single crystal growth ring can be continuously used, and the production cost is reduced. Therefore, the manufacturing cost of the silicon carbide single crystal is reduced.

Description

Technical Field

[0001] The invention relates to the technical field of silicon carbide growth equipment, and in particular to a silicon carbide growth crucible. Background Art

[0002] In the prior art, silicon carbide single crystals are generally produced by physical vapor transport, that is, silicon carbide raw materials are loaded into a crucible, and then the silicon carbide raw materials in the crucible are sublimated by heating the crucible, and then the sublimated silicon carbide atmosphere is used to grow silicon carbide single crystals on the seed crystal structure on the top of the crucible.

[0003] However, under normal circumstances, during the growth and production of silicon carbide single crystals, the silicon carbide raw material inside the crucible is heated and sublimated, and will not only crystallize at the seed crystal at the top of the crucible, but also crystallize at the upper inner wall of the crucible. After the entire silicon carbide single crystal is grown, since the silicon carbide crystallizes on the inner wall of the crucible, one silicon carbide growth crucible will be scrapped after each production is completed, thereby increasing the cost of producing silicon carbide single crystals. Summary of the invention

[0004] The purpose of the present invention is to provide a silicon carbide growth crucible which has a simple structure, reasonable design, practicality and reliability, reduces the production cost of silicon carbide single crystals, and is easy to promote and use.

[0005] In order to achieve the above-mentioned purpose, the present invention is implemented through the following technical scheme: a silicon carbide growth crucible, comprising: a crucible body (1), a seed crystal (5), the crucible body (1) comprising a crucible barrel (2), a single crystal growth ring (3) and a crucible cover (4).

[0006] As a preferred embodiment of the present invention, the upper inner ring of the crucible barrel 2 is provided with a concave step, and the upper outer ring of the crucible barrel 2 is provided with a thread.

[0007] As a preferred embodiment of the present invention, the inner diameter of the single crystal growth ring 3 is equal to the inner diameter of the crucible barrel 2, the outer diameter of the single crystal growth ring 3 is equal to the outer diameter of the concave step provided on the upper inner ring of the crucible barrel 2, and the upper inner ring of the single crystal growth ring 3 is provided with a concave step.

[0008] As a preferred embodiment of the present invention, a convex surface is provided at the lower portion of the crucible cover 5, and a thread is provided at the inner circle of the lower portion of the crucible cover 5.

[0009] As a preferred embodiment of the present invention, the single crystal growth ring 3 is placed at a concave step provided on the upper inner ring of the crucible barrel 2 , and the upper end surface of the single crystal growth ring 3 is flush with the upper end surface of the crucible barrel 2 .

[0010] As a preferred embodiment of the present invention, the seed crystal 5 is placed on the concave step provided on the upper inner ring of the single crystal growth ring 3, and the thread provided on the lower inner ring of the crucible cover 5 is connected to the thread provided on the upper outer ring of the crucible barrel 2. With the connection of the two threads, the convex surface provided on the bottom of the crucible cover 5 contacts and presses the upper end face of the seed crystal 6.

[0011] Beneficial effects of the present invention: During the growth and production process of silicon carbide single crystals, the present invention provides a single crystal growth ring structure, so that when the silicon carbide single crystal grows in the crucible, even if crystallization occurs at the inner wall of the crucible, it is limited to crystallization at the single crystal growth ring. Therefore, after the entire growth process is completed, the crucible portion except the single crystal growth ring can continue to be used, thereby reducing the production cost of the silicon carbide single crystal. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments;

[0013] Figure 1 It is a schematic diagram of the appearance of the present invention;

[0014] Figure 2 A schematic diagram for use in the present invention;

[0015] Figure 3 It is a cross-sectional view at the axis of the present invention; DETAILED DESCRIPTION

[0016] In order to make the technical means, creative features, objectives and effects achieved by the present invention easy to understand, the present invention is further explained below in conjunction with specific implementation methods.

[0017] Reference Figure 3 This specific implementation adopts the following technical solution: a silicon carbide growth crucible, comprising: a crucible body (1), a crucible barrel (2), a single crystal growth ring (3), a crucible cover (4), and a seed crystal (5).

[0018] The design ideas of the specific implementation mode of the present invention are as follows: the present invention utilizes the characteristic that the single crystal growth ring exists independently, so that after the silicon carbide single crystal is produced, the silicon carbide single crystal and the single crystal growth ring can be removed from the crucible body as an integral part, which is equivalent to not damaging the crucible part other than the single crystal growth ring, and then these undamaged parts can be reused, specifically the crucible and the crucible cover, which can greatly reduce the production cost of the silicon carbide single crystal.

[0019] In order to more clearly illustrate the technical solution of the present invention, the present invention is further described below in conjunction with the accompanying drawings: Figure 3A silicon carbide single crystal growth crucible, characterized in that it comprises: a crucible body (1), a seed crystal (5), wherein the crucible body (1) includes a crucible barrel (2), a single crystal growth ring (3), and a crucible cover (4), and the crucible body (1) is made of graphite and is cylindrical as a whole.

[0020] When the present invention is used, usually, Figure 2 The silicon carbide raw material placed at the bottom of the crucible barrel 2 is heated and gasified, rises to the seed crystal 6, cools and solidifies into a silicon carbide single crystal. As the whole process develops, the obtained silicon carbide single crystal accumulates thicker and thicker, and the diameter accumulates larger and larger, so the silicon carbide single crystal will also solidify in the inner ring of the single crystal growth ring 3. After the final production cycle is completed, it can be understood that the silicon carbide single crystal, the seed crystal 5 and the single crystal growth ring 3 become a whole. If you want to get a complete silicon carbide single crystal, you only need to disassemble the entire crucible first. Obviously, the specific disassembly method is to loosen the lid 4 The thread between the crucible barrel 2 and the crucible barrel 2, and then the whole formed by the silicon carbide single crystal, seed crystal 5 and single crystal growth ring 3 is taken out, and then the single crystal growth ring 3 is destroyed and eliminated in some way, and finally a complete silicon carbide single crystal is obtained. In this way, the characteristics of the crucible can be very clearly reflected. In the process of obtaining the entire silicon carbide single crystal, only the single crystal growth ring 3 needs to be consumed, and the remaining parts of the crucible can still be used in the subsequent production process. Therefore, the present invention can greatly reduce the production cost of silicon carbide single crystals.

[0021] The above shows and describes the basic principles, main features and advantages of the present invention. It should be understood by those skilled in the art that the present invention is not limited to the above embodiments, and the above embodiments and descriptions are only for explaining the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention may have various changes and improvements, which fall within the scope of the present invention to be protected. The scope of protection of the present invention is defined by the attached claims and their equivalents.

Claims

1. A crucible for growing silicon carbide single crystals, characterized in that: include: A crucible body (1) and a seed crystal (5), wherein the crucible body (1) comprises a crucible barrel (2), a single crystal growth ring (3) and a crucible cover (4); the crucible body (1) is made of graphite and is cylindrical in shape as a whole.

2. A silicon carbide single crystal growth crucible according to claim 1, characterized in that: The upper inner ring of the crucible barrel 2 is provided with a concave step, and the upper outer ring of the crucible barrel 2 is provided with a thread.

3. The silicon carbide single crystal growth crucible according to claim 1, characterized in that: The inner diameter of the single crystal growth ring 3 is equal to the inner diameter of the crucible barrel 2, the outer diameter of the single crystal growth ring 3 is equal to the outer diameter of the concave step provided on the upper inner circle of the crucible barrel 2, and the upper inner circle of the single crystal growth ring 3 is provided with a concave step.

4. The silicon carbide single crystal growth crucible according to claim 1, characterized in that: The lower part of the crucible cover 5 is provided with a convex surface, and the lower inner circle of the crucible cover 5 is provided with a thread.

5. A silicon carbide single crystal growth crucible according to claims 2 and 3, characterized in that: The single crystal growth ring 3 is placed on a concave step provided on the upper inner ring of the crucible barrel 2 , and the upper end surface of the single crystal growth ring 3 is flush with the upper end surface of the crucible barrel 2 .

6. A silicon carbide single crystal growth crucible according to claims 2, 3 and 4, characterized in that: The seed crystal 5 is placed on the concave step provided on the upper inner circle of the single crystal growth ring 3, and the thread provided on the lower inner circle of the crucible cover 5 is connected with the thread provided on the upper outer circle of the crucible barrel 2. With the connection of the two threads, the convex surface provided on the bottom of the crucible cover 5 contacts and presses the upper end surface of the seed crystal 6.

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