Substrate defect detection method and system

Abstract

The present invention provides a substrate defect detection method and system, belonging to the field of semiconductors. The substrate defect detection method includes providing a substrate; setting a positioning mark at a target position of the substrate, the positioning mark including a main graphic and an auxiliary graphic; determining a detection area of ​​the substrate, dividing the detection area into a plurality of sub-areas, and obtaining coordinate information of each sub-area; performing defect detection on the substrate based on the positioning mark and the coordinate information of each sub-area to obtain the coordinates of the defect. The present invention sets a positioning mark at a target position of the substrate. Then, the detection area of ​​the substrate is determined. Based on the positioning mark and the coordinate information of each sub-area, the substrate is subjected to defect detection to obtain the coordinates of the defect. The defects captured by this method contain coordinate information, which is convenient for subsequent judgment of the composition and source of the defects, and can assist equipment such as gluing, developing, and etching to monitor the defect status of the machine at all times. By paying real-time attention to the status of each machine, the machine can be adjusted in real time, thereby improving the yield of the product.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a substrate defect detection method and system. Background Art

[0002] Phase-shift masks are also called photomasks. Photomasks use glass as a substrate. A graphic area is formed on the surface of the glass where molybdenum silicon is deposited. The materials of the opaque area include glass, molybdenum silicon deposited on the surface of the glass, and metal chromium deposited on the surface of the molybdenum silicon. Substrates with metal chromium coated on the surface are often called chromium substrates. Transparent substrates with only glass are called glass substrates. In the production of photomasks, in order to monitor the states of various machines such as coating, developing, and etching, it is necessary to perform defect detection on chromium substrates or glass substrates. However, when existing methods perform defect detection on chromium substrates or glass substrates, it is impossible to locate the coordinates of the defects, so it is impossible to further analyze the captured defects, especially dust particle defects. For example, the composition or source of the dust particles.

[0003] It should be noted that the information disclosed in the background technology section of the invention is only intended to deepen the understanding of the general background technology of the invention, and should not be regarded as an admission or suggestion in any form that the information constitutes prior art already known to those skilled in the art. Summary of the invention

[0004] The object of the present invention is to provide a substrate defect detection method and system to solve the problem that the defect coordinates cannot be obtained when performing defect detection on a chrome substrate or a glass substrate.

[0005] In order to solve the above technical problems, the present invention provides a substrate defect detection method, comprising:

[0006] providing a substrate;

[0007] Setting a positioning mark at a target position of the substrate, wherein the positioning mark includes a main pattern and an auxiliary pattern;

[0008] Determine a detection area of ​​the substrate, divide the detection area into a plurality of sub-areas, and obtain coordinate information of each sub-area;

[0009] Defect detection is performed on the substrate based on the positioning mark and the coordinate information of each sub-region to obtain the coordinates of the defects.

[0010] Preferably, the material on the surface of the substrate is an opaque material, and setting a positioning mark at a target position of the substrate includes:

[0011] Laser etching is used at the target position of the substrate to set a positioning mark.

[0012] Preferably, the material on the surface of the substrate is a transparent material, and setting a positioning mark at a target position of the substrate includes:

[0013] Depositing a thin film layer at a target position of the substrate, wherein the thin film layer is an opaque material;

[0014] A positioning mark is set on the surface of the thin film layer by laser etching, and the size of the thin film layer deposited at the target position is greater than or equal to the size of the positioning mark.

[0015] Preferably, the target position includes a first target position and a second target position, and the first target position and the second target position are symmetrical about the central axis of the substrate, and the positioning mark includes a first positioning mark and a second positioning mark, and the first positioning mark and the second positioning mark are mirror-distributed about the central axis.

[0016] Preferably, determining the detection area of ​​the substrate, dividing the detection area into a plurality of sub-areas, and obtaining coordinate information of each sub-area includes:

[0017] Dividing the detection area into a number of identical sub-areas, with cutting paths between adjacent sub-areas;

[0018] Set the side length of each sub-area and the width of the cutting path;

[0019] Based on the side length of each sub-region and the width of the cutting road, the coordinate information of each sub-region is established.

[0020] Preferably, performing defect detection on the substrate based on the positioning mark and the coordinate information of each sub-region to obtain the coordinates of the defect comprises:

[0021] Use the defect detection system to obtain the positioning mark, and use the positioning mark as the positioning reference point for defect detection;

[0022] The defect detection system acquires an image of each sub-area within the detection area;

[0023] The defect detection system compares the images of two adjacent sub-areas in the detection area to obtain the defect, and obtains the coordinate information of the defect based on the coordinate information of the sub-area where the defect is located.

[0024] Preferably, the main graphic includes a first main graphic and a second main graphic, and the first main graphic and the second main graphic are cross-connected to each other to form different intersection areas, and the auxiliary graphic includes a plurality of first auxiliary graphics and a plurality of second auxiliary graphics, and the plurality of the first auxiliary graphics are distributed in at least one intersection area of ​​the main graphic, and the plurality of the second auxiliary graphics are distributed in another intersection area of ​​the main graphic.

[0025] Preferably, the line width of the first auxiliary pattern is equal to that of the second auxiliary pattern, and the distance between the first auxiliary pattern and the minimum value of the main pattern is equal to that between the second auxiliary pattern and the minimum value of the main pattern.

[0026] Preferably, the defect detection system is used to obtain the positioning mark, and the positioning mark is used as a positioning reference point for defect detection, including:

[0027] The defect detection system acquires images of the first auxiliary pattern and the second auxiliary pattern to acquire line widths of the first auxiliary pattern and the second auxiliary pattern, and distances between the first auxiliary pattern and the second auxiliary pattern and the main pattern;

[0028] The defect detection system compares the line widths of the first auxiliary graphic and the second auxiliary graphic, as well as the minimum value of the distances between several first auxiliary graphics and the main graphic and the minimum value of the distances between several second auxiliary graphics and the main graphic. If the line width of the first auxiliary graphic is equal to the line width of the second auxiliary graphic, and the distance between the first auxiliary graphic and the main graphic is equal to the distance between the second auxiliary graphic and the main graphic, the defect detection system uses the first positioning mark and the second positioning mark as positioning reference points for defect detection, respectively.

[0029] Based on the same inventive concept, the present invention also provides a substrate defect detection system, comprising:

[0030] An acquisition module determines a detection area of ​​the substrate, divides the detection area into a plurality of sub-areas, and acquires coordinate information of each sub-area;

[0031] The logic operation module performs defect detection on the substrate based on the positioning mark and the coordinate information of each sub-region to obtain the coordinates of the defects.

[0032] Compared with the prior art, the substrate defect detection method of the present invention has the following advantages:

[0033] The present invention sets a positioning mark at the target position of the substrate. Then, the detection area of ​​the substrate is determined, the detection area is divided into a plurality of sub-areas, and the coordinate information of each sub-area is obtained. The substrate is subjected to defect detection based on the positioning mark and the coordinate information of each sub-area to obtain the coordinates of the defect. The defects captured by this method contain coordinate information, which is convenient for subsequent determination of the composition and source of the defect, and can assist the equipment such as gluing, developing, and etching to monitor the defect status of the machine at all times. By paying attention to the status of each machine in real time, the machine can be adjusted in real time, thereby improving the yield of the product. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 is a flow chart of a substrate defect detection method according to an embodiment of the present invention;

[0035] Figure 2is a schematic structural diagram of a substrate in one embodiment of the present invention;

[0036] Figure 3 is a schematic structural diagram of providing one of the positioning marks on a substrate in one embodiment of the present invention;

[0037] Figure 4 is a schematic structural diagram of an embodiment of the present invention after the substrate is provided with positioning marks;

[0038] Figure 5 is a schematic structural diagram of a substrate in another embodiment of the present invention;

[0039] Figure 6 is a schematic structural diagram of depositing an opaque material at a target position of a substrate in another embodiment of the present invention;

[0040] Figure 7 is a structural schematic diagram of setting a positioning mark at a target position in another embodiment of the present invention;

[0041] Figure 8 It is a schematic diagram of the structure of the positioning mark in one embodiment of the present invention;

[0042] Fig. 9 is a schematic diagram of a structure for determining a chip inspection area in one embodiment of the present invention;

[0043] Fig.10 is a schematic structural diagram of a defect obtained in a substrate by a Die-Die method in one embodiment of the present invention;

[0044] Fig.11 is a schematic diagram of a structure for determining a chip inspection area in another embodiment of the present invention;

[0045] Fig.12 is a schematic structural diagram of a defect obtained in a substrate by using a Die-Die method in another embodiment of the present invention;

[0046] In the figure,

[0047] 100-chrome substrate; 200-positioning mark;

[0048] 210-main graphic; 220-auxiliary graphic;

[0049] 300-glass substrate; 400-sub-region;

[0050] 410- comparison chip; 420- chip to be tested;

[0051] 430-Particle defect. DETAILED DESCRIPTION

[0052] In order to make the purpose, advantages and features of the present invention clearer, the substrate defect detection method and system proposed in the present invention are further described in detail in combination with the accompanying drawings and specific embodiments. It should be noted that the drawings are all in a very simplified form and use non-precise proportions, which are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention. It should be understood that the drawings in the specification do not necessarily show the specific structure of the present invention in proportion, and the illustrative features used to illustrate certain principles of the present invention in the drawings in the specification will also adopt a slightly simplified drawing method. The specific design features of the present invention disclosed herein include, for example, specific dimensions, directions, positions and shapes, which will be determined in part by the specific environment to be applied and used. And, in the embodiments described below, sometimes the same figure mark is used in common between different drawings to represent the same part or a part with the same function, and its repeated description is omitted. In this specification, similar numbers and letters are used to represent similar items, so once an item is defined in one drawing, it does not need to be further discussed in subsequent drawings.

[0053] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0054] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0055] In the prior art, when performing defect detection on a chrome substrate or a glass substrate, since there is no positioning reference point on the chrome substrate or the glass substrate, and the substrate detection equipment using the photomask does not have an alignment function, the captured defects cannot be located by coordinates. Therefore, it is difficult to further analyze the captured defects, especially the dust particle defects, such as the composition analysis and source analysis of the dust particles, which affects the defect detection effect of the chrome substrate or the glass substrate.

[0056] The core idea of ​​the present invention is to provide a substrate defect detection method, which can not only detect defects of a chrome substrate or a glass substrate, but also obtain the coordinates of the defects to facilitate analysis of the defects.

[0057] In order to realize the above idea, the present invention provides a substrate defect detection method, referring to Figures 1 to 12 A specific implementation of a substrate defect detection method disclosed herein includes the following steps S1 to S4.

[0058] Step S1: providing a substrate.

[0059] Specifically, refer to Figure 1 , Figure 2 and Figure 5 As shown, a substrate is provided. The substrate is used to make a photomask. It should be noted that in this embodiment, no pattern for etching is formed on the substrate. The substrate is a chromium substrate 100. That is, the substrate uses glass as a base, and molybdenum silicon material and opaque metal chromium are deposited on the surface of the glass in sequence. The substrate can also be glass. That is, no material has been deposited on the surface of the glass. Therefore, no pattern for etching and any mark are formed on the surface of the glass and the surface of the chromium substrate 100.

[0060] Step S2 : setting a positioning mark 200 at a target position of the substrate, wherein the positioning mark 200 includes a main pattern 210 and an auxiliary pattern 220 .

[0061] Specifically, refer to Figures 1 to 8 As shown, when the substrate is the chrome substrate 100 in step S1, a positioning mark 200 is made on the chrome substrate 100. The target position includes a first target position (ie, Figure 2 A in the figure) and the second target position (i.e., Figure 3 ), and the first target position and the second target position are about the central axis of the substrate (ie, Figure 4 The positioning mark 200 is symmetrical with the dotted line a) in FIG. 1 , and includes a first positioning mark and a second positioning mark, and the first positioning mark and the second positioning mark are on the same straight line. The first positioning mark is set at the first target position. The second positioning mark is set at the second target position. First, Figure 2 Make the first positioning mark at A in the figure. Then, Figure 3 The second positioning mark is made at B in the figure, and the chromium substrate 100 is formed as follows Figure 4 The structure shown. Since the photomask is a square structure, the chrome substrate 100 is also set to a square structure. Point A in the chrome substrate 100 is located at one corner of the chrome substrate 100. Point B in the chrome substrate 100 is located at another corner of the chrome substrate 100, and the coordinates of the two points A and B are located on the same straight line. Figure 4 As shown, Figure 4 In the X direction and the Y direction, a coordinate system is established, then point A and point B are both on the extension line of the X axis.

[0062] Next, after the positioning mark 200 is etched at A by laser etching, the same positioning mark 200 is etched at B by the same method. Furthermore, the positioning mark 200 at A and the positioning mark 200 at B are mirror-imaged with respect to the central axis a.

[0063] When the substrate is the glass substrate 300 in step S1, a positioning mark 200 is made on the glass substrate 300. The glass substrate 300 is different from the chromium substrate 100 in that the positioning mark 200 cannot be formed directly on the surface of the glass substrate 300. Therefore, before the positioning mark 200 is formed on the glass substrate 300, a thin film layer is first formed at the target position of the glass substrate 300. The material of the thin film layer can be selected from molybdenum silicon material and opaque metallic chromium. Since molybdenum silicon material needs to be deposited on the surface of the glass substrate 300 in the subsequent process, in this embodiment, preferably, the material of the thin film layer is molybdenum silicon material. The light transmittance of molybdenum silicon material is only 6%, which can be ignored. The positions where the thin film layers are deposited are respectively Figure 5 The glass substrate 300 and the chrome substrate 100 have the same side lengths, and the positions of A and B are also the same, which will not be described in detail. Next, after the positioning mark 200 is etched on the thin film layer at A of the glass substrate 300 by laser etching, the same positioning mark 200 is etched on the thin film layer at B of the glass substrate 300 by the same method. Furthermore, the positioning mark 200 at A and the positioning mark 200 at B are mirror images distributed about the Y axis.

[0064] Step S3: determining a detection area of ​​the substrate, dividing the detection area into a plurality of sub-areas 400 , and acquiring coordinate information of each sub-area 400 .

[0065] Specifically, refer to Figure 1 , Figures 9 to 11 As shown, determining the detection area of ​​the substrate, dividing the detection area into a plurality of sub-areas 400, and obtaining coordinate information of each sub-area 400 includes:

[0066] First, the detection area is divided into a number of identical sub-areas 400, and there are cutting lanes between adjacent sub-areas 400. Then, the side length of each sub-area and the width of the cutting lane are set. Finally, based on the side length of each sub-area 400 and the width of the cutting lane, the coordinate information of each sub-area 400 is established. The detection area of ​​the chromium substrate 100 is determined. Then, the detection area is divided into a number of identical sub-areas 400. Each sub-area 400 is defined as a chip, and the structure of each chip is a square. The side length of the square can be set to 10mm, 15mm, or 20mm, etc. The cutting lanes between chips (i.e., Fig. 9 The width of the cutting path (indicated by the arrow D in the figure) can be set to 1nm, 2nm, or 3nm. The side length of the chip and the width of the cutting path can be set according to the actual size of the substrate, and no specific requirements are made here. Preferably, in this embodiment, the side length of the chip is set to 20mm, and the width of the cutting path is set to 1nm. The chromium substrate 100 after division is formed as follows Fig. 9 In the same way, the detection area is determined on the glass substrate 300, and the detection area is divided into a plurality of sub-areas 400. Then, each sub-area 400 is defined as a chip, and the structure of each chip is a square. The side length of the square is 20 mm. The cutting path between chips (i.e., Fig.10 The width of the cutting path (the cutting path indicated by the arrow E in FIG. 1 ) is set to 1 nm. The coordinate information of each chip can be established in the detection area in the above manner.

[0067] Step S4: performing defect detection on the substrate based on the coordinates of the positioning mark 200 and the sub-region 400 to obtain the coordinates of the defects.

[0068] Specifically, refer to Figures 1 to 12 As shown, defect detection is performed on the substrate based on the positioning mark 200 and the coordinate information of each sub-area 400 to obtain the coordinates of the defect, including: using a defect detection system to obtain the positioning mark 200, and using the positioning mark 200 as a positioning reference point for defect detection; the defect detection system obtains an image of each sub-area 400 in the detection area; the defect detection system compares the images of two adjacent sub-areas 400 in the detection area to obtain defects, and obtains the coordinate information of the defect based on the coordinate information of the sub-area 400 where the defect is located. The defect detection machine detects defects in a Die-to-Die manner. First, the defect detection machine locates the chrome substrate 100 or the glass substrate 300 through the positioning mark 200. Then, based on the coordinate information of the chip, the images of the two adjacent chips captured are compared to determine whether there are defects in the coordinate information. The two chips can be Fig.10 The comparison chip 410 and the chip to be detected 420 may also be as follows Fig.12The comparison chip 410 and the chip to be detected 420 are shown in FIG. The particle defect 430 is found through detection, and then the coordinate information of the particle defect 430 is obtained based on the coordinate information of the chip where the particle defect 430 is located. Fig.10 and Fig.12 The following is a schematic diagram of defects detected by this method. In addition, it should be noted that defects within 1nm can be ignored. The defects captured by this method contain coordinate information, which is convenient for subsequent judgment of the composition and source of the defects. It can assist equipment such as glue coating, development, and etching, and monitor the defect status of the machine at all times. By paying real-time attention to the status of each machine and adjusting the machine in real time, the yield of the product can be improved.

[0069] Further, Figure 8 As shown, in order to further improve the detection accuracy of the detection machine, the main graphic 210 includes a first main graphic and a second main graphic, and the first main graphic and the second main graphic are cross-connected to each other and form different intersection areas, and the auxiliary graphic 220 includes a plurality of first auxiliary graphics and a plurality of second auxiliary graphics, and the plurality of the first auxiliary graphics are distributed in at least one intersection area of ​​the main graphic 210, and the plurality of the second auxiliary graphics are distributed in another intersection area of ​​the main graphic 210. Figure 8 As shown, the first main figure is a figure of a strip structure arranged along the X-axis direction. The second main figure is a figure of a strip structure arranged along the Y-circumferential direction. Preferably, the figures of the two strip structures cross each other perpendicularly to form four intersection areas. The four intersection areas correspond to the four quadrants of the formed coordinate system, namely the first quadrant, the second quadrant, the third quadrant, and the fourth quadrant. The auxiliary figure 220 includes a plurality of first auxiliary figures and a plurality of second auxiliary figures, and the plurality of the first auxiliary figures are distributed in the first quadrant and the third quadrant of the main figure 210. The plurality of the second auxiliary figures are distributed in the second quadrant and the fourth quadrant of the main figure 210. And the first auxiliary figure and the second auxiliary figure are both rectangular. The long side of the first auxiliary figure is arranged along the X-axis direction. The long side of the second auxiliary figure is arranged along the Y-axis direction.

[0070] The line width d1 of the first auxiliary pattern is equal to the line width d2 of the second auxiliary pattern, and the minimum distance d3 between the first auxiliary pattern and the main pattern 210 is equal to the minimum distance d4 between the second auxiliary pattern and the main pattern 210.

[0071] The defect detection system is used to obtain the positioning mark 200, and the positioning mark 200 is used as a positioning reference point for defect detection, including:

[0072] The defect detection system acquires images of the first auxiliary pattern and the second auxiliary pattern to acquire line widths of the first auxiliary pattern and the second auxiliary pattern, and distances between the first auxiliary pattern and the second auxiliary pattern and the main pattern 210;

[0073] The defect detection system compares the line width d1 of the first auxiliary pattern and the line width d2 of the second auxiliary pattern, as well as the minimum value d3 of the first auxiliary pattern from the main pattern 210 and the minimum value d4 of the second auxiliary pattern from the main pattern 210. If the line width d1 of the first auxiliary pattern is equal to the line width d2 of the second auxiliary pattern, and the minimum value d3 of the first auxiliary pattern from the main pattern 210 and the minimum value d4 of the second auxiliary pattern from the main pattern 210 are equal, the defect detection system uses the first positioning mark and the second positioning mark as positioning reference points for defect detection. If d1 is not equal to d2 and / or d3 is not equal to d4, the defect detection system fails to locate the reference point.

[0074] To realize the above idea, this embodiment further discloses a substrate defect detection system, including an acquisition module, which determines a detection area of ​​a substrate, divides the detection area into a plurality of sub-areas 400, and obtains coordinate information of each sub-area 400. A logic operation module performs defect detection on the substrate based on the positioning mark 200 and the coordinate information of each sub-area 400 to obtain the coordinates of the defect.

[0075] In summary, the above embodiments provide detailed descriptions of different configurations of the substrate defect detection method and system. Of course, the above description is only a description of the preferred embodiments of the present invention, and is not any limitation to the scope of the present invention. The present invention includes but is not limited to the configurations listed in the above embodiments. Those skilled in the art can draw inferences based on the contents of the above embodiments. Any changes and modifications made by ordinary technicians in the field of the present invention based on the above disclosure are within the scope of protection of the claims.

Claims

1. A substrate defect detection method, characterized in that: include: providing a substrate; Setting a positioning mark at a target position of the substrate, wherein the positioning mark includes a main pattern and an auxiliary pattern; Determine a detection area of ​​the substrate, divide the detection area into a plurality of sub-areas, and obtain coordinate information of each sub-area; Defect detection is performed on the substrate based on the positioning mark and the coordinate information of each sub-region to obtain the coordinates of the defects.

2. The substrate defect detection method according to claim 1, characterized in that: The material on the surface of the substrate is an opaque material, and setting a positioning mark at a target position of the substrate includes: Laser etching is used at the target position of the substrate to set a positioning mark.

3. The substrate defect detection method according to claim 1, characterized in that: The material on the surface of the substrate is a transparent material, and setting a positioning mark at a target position of the substrate includes: Depositing a thin film layer at a target position of the substrate, wherein the thin film layer is an opaque material; A positioning mark is set on the surface of the thin film layer by laser etching, and the size of the thin film layer deposited at the target position is greater than or equal to the size of the positioning mark.

4. The substrate defect detection method according to claim 1, characterized in that: The target position includes a first target position and a second target position, and the first target position and the second target position are symmetrical about the central axis of the substrate. The positioning mark includes a first positioning mark and a second positioning mark, and the first positioning mark and the second positioning mark are mirror-distributed about the central axis.

5. The substrate defect detection method according to claim 1, characterized in that: Determining a detection area of ​​a substrate, dividing the detection area into a plurality of sub-areas, and obtaining coordinate information of each sub-area includes: Dividing the detection area into a number of identical sub-areas, with cutting paths between adjacent sub-areas; Set the side length of each sub-area and the width of the cutting path; Based on the side length of each sub-region and the width of the cutting road, the coordinate information of each sub-region is established.

6. The substrate defect detection method according to claim 4, characterized in that: Performing defect detection on the substrate based on the positioning mark and the coordinate information of each sub-region to obtain the coordinates of the defect includes: Use the defect detection system to obtain the positioning mark, and use the positioning mark as the positioning reference point for defect detection; The defect detection system acquires an image of each sub-area within the detection area; The defect detection system compares the images of two adjacent sub-areas in the detection area to obtain the defect, and obtains the coordinate information of the defect based on the coordinate information of the sub-area where the defect is located.

7. The substrate defect detection method according to claim 6, characterized in that: The main graphic includes a first main graphic and a second main graphic, and the first main graphic and the second main graphic are cross-connected to each other to form different intersection areas. The auxiliary graphic includes a plurality of first auxiliary graphics and a plurality of second auxiliary graphics, and the plurality of the first auxiliary graphics are distributed in at least one intersection area of ​​the main graphic, and the plurality of the second auxiliary graphics are distributed in another intersection area of ​​the main graphic.

8. The substrate defect detection method according to claim 7, characterized in that: The line width of the first auxiliary pattern is equal to the line width of the second auxiliary pattern, and the distance between the first auxiliary pattern and the minimum value of the main pattern is equal to the distance between the second auxiliary pattern and the minimum value of the main pattern.

9. The substrate defect detection method according to claim 8, characterized in that: The defect detection system is used to obtain positioning marks, and the positioning marks are used as positioning reference points for defect detection, including: The defect detection system acquires images of the first auxiliary pattern and the second auxiliary pattern to acquire line widths of the first auxiliary pattern and the second auxiliary pattern, and distances between the first auxiliary pattern and the second auxiliary pattern and the main pattern; The defect detection system compares the line widths of the first auxiliary graphic and the second auxiliary graphic, as well as the minimum value of the distances between several first auxiliary graphics and the main graphic and the minimum value of the distances between several second auxiliary graphics and the main graphic. If the line width of the first auxiliary graphic is equal to the line width of the second auxiliary graphic, and the distance between the first auxiliary graphic and the main graphic is equal to the distance between the second auxiliary graphic and the main graphic, the defect detection system uses the first positioning mark and the second positioning mark as positioning reference points for defect detection, respectively.

10. A substrate defect detection system, characterized in that: include: An acquisition module determines a detection area of ​​the substrate, divides the detection area into a plurality of sub-areas, and acquires coordinate information of each sub-area; The logic operation module performs defect detection on the substrate based on the positioning mark and the coordinate information of each sub-region to obtain the coordinates of the defects.

Images