Reference voltage generation circuit, chip, and electronic device

Abstract

A reference voltage generation circuit, a chip and an electronic device, the reference voltage generation circuit comprising a first current source circuit configured to output a first current, the first current having a first temperature characteristic; a first current mirror circuit connected with the first current source circuit, configured to generate a second current based on the first current; a constant current source circuit connected with the first current mirror circuit and a second current source circuit, configured to output a third current; the second current source circuit configured to generate a fourth current based on the second current and the third current, the fourth current being a compensation current of the first current, the fourth current having a second temperature characteristic, the first temperature characteristic being opposite to the second temperature characteristic; a second current mirror circuit connected with the second current source circuit, configured to generate a fifth current based on the fourth current, the fifth current being a mirror current of the fourth current; and a voltage generation circuit connected with the first current source circuit and the second current mirror circuit, configured to generate a reference voltage based on the first current and the fifth current.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of circuit, more particularly to a reference voltage generating circuit, a chip and an electronic device. BACKGROUND

[0002] The reference voltage generating circuit is an indispensable circuit in most chips. The reference voltage is a voltage with extremely high temperature drift coefficient, which is widely used in comparators, closed-loop operational amplifiers and various circuits, and is related to the circuit performance of important modules such as over-temperature and under-voltage. In order to obtain a reference voltage with lower temperature drift coefficient, compensation is needed. Since the temperature stability of the bandgap reference voltage after first-order compensation still cannot meet the requirements of most use scenarios, various high-order compensation methods have emerged, such as high-order curvature compensation, exponential curvature compensation, etc. However, these compensation methods are directional compensation and cannot achieve quantitative and accurate compensation. SUMMARY

[0003] The present application is proposed to solve the above problems. According to an aspect of the present application, a reference voltage generating circuit is provided, which comprises:

[0004] A first current source circuit is configured to output a first current, wherein the first current has a first temperature characteristic;

[0005] A first current mirror circuit is connected to the first current source circuit and configured to generate a second current based on the first current, wherein the second current is a mirror current of the first current;

[0006] A constant current source circuit is connected to the first current mirror circuit and a second current source circuit and configured to output a third current, wherein the third current is a constant current;

[0007] The second current source circuit is configured to generate a fourth current based on the second current and the third current, wherein the fourth current is a compensation current of the first current, the fourth current has a second temperature characteristic, and the first temperature characteristic and the second temperature characteristic are opposite;

[0008] A second current mirror circuit is connected to the second current source circuit and configured to generate a fifth current based on the fourth current, wherein the fifth current is a mirror current of the fourth current;

[0009] A voltage generating circuit is connected to the first current source circuit and the second current mirror circuit and configured to generate a reference voltage based on the first current and the fifth current.

[0010] The technical scheme has the following technical effects: by tracking the change of the original to-be-compensated current with temperature, a compensation current corresponding to the original to-be-compensated current is generated, the change of the compensation current with temperature is opposite to the change of the to-be-compensated current with temperature, in this way, quantitative compensation of the to-be-compensated current is realized, and a stable reference voltage with an ultra-low temperature drift coefficient is generated, and the problem that only directional compensation but not quantitative and accurate compensation can be realized in the existing compensation mode is solved.

[0011] In an embodiment of the present application, the first current source circuit is a positive temperature coefficient current source, the first current is a positive temperature coefficient current, and the fourth current is a negative temperature coefficient current.

[0012] The technical scheme has the following technical effects: accurate compensation of the positive temperature coefficient current source is realized to generate a stable reference voltage.

[0013] In an embodiment of the present application, the first current source circuit comprises:

[0014] A first transistor, a gate of the first transistor is connected to a gate of a second transistor, a source of the first transistor is connected to a power supply, and a drain of the first transistor is connected to a collector of a first triode;

[0015] The second transistor, a gate of the second transistor is connected to a drain of the second transistor, and a source of the second transistor is connected to the power supply;

[0016] The first triode, a base of the first triode is connected to the collector of the first triode, and an emitter of the first triode is connected to ground;

[0017] A second triode, a base of the second triode is connected to a base of the first triode, a collector of the second triode is connected to the drain of the second transistor, and an emitter of the second triode is connected to a first end of a first resistor;

[0018] The first resistor, a second end of the first resistor is connected to ground.

[0019] The technical scheme has the following technical effects: the structure of the first current source circuit can realize a current source outputting a positive temperature coefficient current.

[0020] In an embodiment of the present application, the first current mirror circuit comprises:

[0021] A fourth transistor, a gate of the fourth transistor is connected to the first current source circuit, a source of the fourth transistor is connected to a power supply, and a drain of the fourth transistor is connected to a first end of a third resistor;

[0022] The third resistor has a second end connected to the constant current source circuit and the second current source circuit.

[0023] The above technical solution has the following technical effects: the fourth transistor realizes mirroring of the first current, and the third resistor adjusts the precision of the first current mirror circuit.

[0024] In an embodiment of the present application, the second current source circuit comprises:

[0025] The fifth transistor has a gate and a drain connected to a first end of the fourth resistor, and a source connected to a power supply.

[0026] The fourth resistor has a second end connected to the constant current source circuit and the second current mirror circuit.

[0027] The above technical solution has the following technical effects: the fifth transistor and the fourth resistor generate a compensation current of the first current.

[0028] In an embodiment of the present application, the second current mirror circuit comprises:

[0029] The operational amplifier has a positive input end connected to the second current source circuit, a negative input end connected to an output end of the operational amplifier, and an output end connected to a second end of the fifth resistor.

[0030] The third transistor has a source connected to a power supply, a gate connected to the first current source circuit, and a drain connected to a second end of the sixth resistor.

[0031] The sixth transistor has a source connected to the power supply, a gate and a drain connected to a first end of the fifth resistor.

[0032] The seventh transistor has a gate connected to the gate of the sixth transistor, a source connected to the power supply, and a drain connected to a first end of the sixth resistor.

[0033] The sixth resistor has a second end connected to the voltage generation circuit.

[0034] The above technical solution has the following technical effects: instead of directly mirroring the current through a transistor, an operational amplifier is added, a compensation current is input to the positive input end of the operational amplifier, the output end of the operational amplifier is fed back to the negative input end, and then the current is mirrored through a transistor, which can further improve the precision of the current mirror replication current, thereby providing higher reliability for subsequent generation of stable reference voltage.

[0035] In one embodiment of the present application, the voltage generation circuit comprises:

[0036] a second resistor, a first end of the second resistor being connected to the second current mirror circuit, and a second end of the second resistor being grounded.

[0037] The above technical solution has the following technical effects: by flowing the first current and the compensation current through the second resistor, a stable reference voltage is output. The resistance value of the second resistor can be set according to the value of the required reference voltage, so as to realize customized stable reference voltage.

[0038] In one embodiment of the present application, the second resistor is a resistance value adjustable resistor.

[0039] The above technical solution has the following technical effects: not only can customized stable reference voltage be realized, but also real-time changing reference voltage can be obtained by adjusting the resistance value of the second resistor in real time, so as to realize more flexible application scenarios.

[0040] In one embodiment of the present application, the constant current source circuit comprises:

[0041] a constant current source, an output end of the constant current source being connected to a drain of an eighth transistor;

[0042] the eighth transistor, a gate of the eighth transistor being connected to the drain of the eighth transistor, and a source of the eighth transistor being grounded;

[0043] a ninth transistor, a gate of the ninth transistor being connected to the gate of the eighth transistor, a source of the ninth transistor being grounded, and a drain of the ninth transistor being connected to the first current mirror circuit and the second current source circuit.

[0044] The above technical solution has the following technical effects: the constant current source circuit is realized by the constant current source and the two transistors.

[0045] In one embodiment of the present application, the first current source circuit is a negative temperature coefficient current source, the first current is a negative temperature coefficient current, and the fourth current is a positive temperature coefficient current.

[0046] The above technical solution has the following technical effects: precise compensation of the negative temperature coefficient current source can be realized to generate a stable reference voltage.

[0047] According to another aspect of the present application, a chip is also provided, which comprises the above-mentioned reference voltage generation circuit.

[0048] According to still another aspect of the present application, an electronic device is also provided, which comprises the above-mentioned chip.

[0049] The reference voltage generation circuit, the chip and the electronic device according to the embodiments of the present application track the change of the original current to be compensated with temperature, generate a compensation current corresponding to the original current to be compensated, and the change of the compensation current with temperature is opposite to the change of the original current to be compensated with temperature. In this way, the quantitative compensation of the original current to be compensated is realized, and the stable reference voltage with excellent characteristics of ultra-low temperature drift coefficient is generated. The problem that only directional compensation but not quantitative and accurate compensation can be solved in the existing compensation mode. BRIEF DESCRIPTION OF DRAWINGS

[0050] The above and other objects, features and advantages of the present application will become more apparent from the following detailed description of embodiments of the present application taken in conjunction with the accompanying drawings. The drawings provided in the present application are used to provide further understanding of the embodiments of the present application, and constitute a part of the specification, and are used to explain the present application together with the embodiments of the present application, but do not constitute a limitation of the present application. In the drawings, the same reference numerals generally indicate the same components or steps.

[0051] Figure 1 A schematic structural block diagram of the reference voltage generation circuit according to the embodiments of the present application is shown.

[0052] Figure 2 An exemplary circuit diagram of the reference voltage generation circuit according to the embodiments of the present application is shown.

[0053] Figure 3 A comparison diagram of the temperature characteristic curves of the first current and the fourth current in the reference voltage generation circuit according to the embodiments of the present application is shown.

[0054] Figure 4 A comparison diagram of the temperature characteristic curves of the change slopes of the first current and the fourth current in the reference voltage generation circuit according to the embodiments of the present application is shown.

[0055] Figure 5 A schematic diagram of the temperature drift coefficient when the first reference voltage is obtained by the reference voltage generation circuit according to the embodiments of the present application is shown.

[0056] Figure 6 A schematic diagram of the temperature drift coefficient when the second reference voltage is obtained by the reference voltage generation circuit according to the embodiments of the present application is shown.

[0057] Figure 7 A schematic diagram of the temperature drift coefficient when the third reference voltage is obtained by the reference voltage generation circuit according to the embodiments of the present application is shown. DETAILED DESCRIPTION

[0058] To make the objectives, technical solutions, and advantages of this application more apparent, exemplary embodiments according to this application will be described in detail below with reference to the accompanying drawings. Obviously, the described embodiments are merely a part of the embodiments of this application, and not all of the embodiments of this application. It should be understood that this application is not limited to the exemplary embodiments described herein. Based on the embodiments of this application described herein, all other embodiments obtained by those skilled in the art without inventive effort should fall within the protection scope of this application.

[0059] Figure 1 A schematic block diagram of a reference voltage generation circuit 1 according to an embodiment of this application is shown. Figure 1 As shown, the reference voltage generation circuit 1 includes a first current source circuit 11, a first current mirror circuit 12, a constant current source circuit 13, a second current source circuit 14, a second current mirror circuit 15, and a voltage generation circuit 16. The first current source circuit 11 outputs a first current, which has a first temperature characteristic. The first current mirror circuit 12 is connected to the first current source circuit 11 and generates a second current based on the first current; the second current is a mirror current of the first current. The constant current source circuit 13 is connected to the first current mirror circuit 12 and the second current source circuit 14 and outputs a third current, which is a constant current (here, constant current can be understood as the third current being negligibly affected by temperature relative to the first and second currents). The second current source circuit 14 generates a fourth current based on the second and third currents; the fourth current is a compensation current for the first current and has a second temperature characteristic, the opposite of the first temperature characteristic. The second current mirror circuit 15 is connected to the second current source circuit 14 and generates a fifth current based on the fourth current; the fifth current is a mirror current of the fourth current. The voltage generation circuit 16 is connected to the first current source circuit 11 and the second current mirror circuit 15, and is used to generate a voltage based on the first current and the fifth current, which is the reference voltage output by the reference voltage generation circuit 1.

[0060] In the embodiment of the present application, the first current source circuit 11 of the reference voltage generation circuit 1 can be a current source with any temperature characteristic. Here, the temperature characteristic can be understood as that the first current source circuit 11 outputs a first current, and the magnitude of the first current changes with temperature. For example, the first current increases with the increase of temperature; for another example, the first current decreases with the increase of temperature; for still another example, the first current first increases and then decreases with the increase of temperature, and so on. Since the first current output by the first current source circuit 11 has a temperature characteristic, it needs to be compensated. In the embodiment of the present application, the compensation method adopted is as follows: the change of the first current with temperature is tracked, and a compensation current corresponding to the change of the first current with temperature is generated. The change of the compensation current with temperature is opposite to the change of the first current with temperature, that is, the first current and the compensation current have opposite temperature characteristics, so as to realize quantitative compensation of the first current. Finally, the first current and the compensation current are jointly fed into the voltage generation circuit 16. Since the first current and the compensation current are complementary, a stable reference voltage can be generated in the voltage generation circuit 16 with a certain resistance.

[0061] Specifically, the present application realizes the above compensation through the following circuit structure: the first current mirror circuit 12 generates a mirror current of the first current, that is, a second current. The constant current source circuit 13 generates a third current, which can be referred to as a constant current relative to the first current and the second current. The second current source circuit 14 generates a fourth current complementary to the first current on the basis of the second current and the third current, as the compensation current of the first current. Then, the fourth current passes through the second current mirror circuit 15 to obtain a mirror current of the fourth current, that is, a fifth current. Finally, the fifth current and the first current are jointly fed into the voltage generation circuit 16 to obtain the reference voltage. According to the required reference voltage value, the resistance value of the voltage generation circuit 16 can be set, so that different reference voltages can be obtained.

[0062] Therefore, the reference voltage generation circuit 1 according to the embodiment of the present application realizes quantitative compensation of the to-be-compensated current by tracking the change of the original to-be-compensated current with temperature, generating a compensation current corresponding to the change of the to-be-compensated current with temperature, and the change of the compensation current with temperature is opposite to the change of the to-be-compensated current with temperature. In this way, quantitative compensation of the to-be-compensated current is realized, and a stable reference voltage with excellent characteristics of ultra-low temperature drift coefficient is generated, which can solve the problem that only directional compensation but not quantitative and accurate compensation can be realized in the existing compensation method.

[0063] In embodiments of the present application, the first current source circuit 11 can be a current source with any temperature characteristic, as described previously. In one example, the first current source circuit 11 is a proportional to absolute temperature (PTAT) current source, and accordingly, the first current is a PTAT current, and the fourth current is a complementary to absolute temperature (CTAT) current. In this example, precise compensation of the PTAT current source can be achieved to generate a stable reference voltage. In another example, the first current source circuit 11 is a complementary to absolute temperature (CTAT) current source, and accordingly, the first current is a CTAT current, and the fourth current is a PTAT current. In this example, precise compensation of the CTAT current source can be achieved to generate a stable reference voltage. In other examples, the first current source circuit 11 can be a current source with other temperature characteristics.

[0064] The following is described with the first current source circuit 11 being a PTAT current source as an example. In this example, the first current source circuit 11 can include a first transistor, a second transistor, a first triode, a second triode, and a first resistor. The gate of the first transistor is connected to the gate of the second transistor, the source of the first transistor is connected to a power supply, and the drain of the first transistor is connected to the collector of the first triode. The gate of the second transistor is connected to the drain of the second transistor, and the source of the second transistor is connected to the power supply. The base of the first triode is connected to the collector of the first triode, and the emitter of the first triode is connected to ground. The base of the second triode is connected to the base of the first triode, the collector of the second triode is connected to the drain of the second transistor, and the emitter of the second triode is connected to the first end of the first resistor. The second end of the first resistor is connected to ground. The structure of the first current source circuit 11 can achieve a PTAT current source that outputs a PTAT current. That is, in this example, the first current output by the first current source circuit 11 is a PTAT current, and accordingly, the compensation current (the fourth current) generated by the second current source circuit is a CTAT current. Exemplarily, the first transistor and the second transistor are both PMOS transistors.

[0065] In the embodiment of the present application, the first current mirror circuit 12 can include a fourth transistor and a third resistor. Wherein, the gate of the fourth transistor is connected to the first current source circuit 11, the source of the fourth transistor is connected to the power supply, and the drain of the fourth transistor is connected to the first end of the third resistor; the second end of the third resistor is connected to the constant current source circuit 13 and the second current source circuit 14. In this embodiment, the first current is mirrored through the fourth transistor, and the third resistor plays a role in adjusting the accuracy of the first current mirror circuit 12. When the first current mirror circuit 12 in this example is used to generate the mirror current of the PTAT current source in the previous example, the gate of the fourth transistor can be connected to the gate of the first transistor described above. Illustratively, the fourth transistor is a PMOS transistor.

[0066] In the embodiment of the present application, the second current source circuit 14 can include a fifth transistor and a fourth resistor. Wherein, the gate and the drain of the fifth transistor are connected to the first end of the fourth resistor, and the source of the fifth transistor is connected to the power supply; the fourth resistor, and the second end of the fourth resistor is connected to the constant current source circuit and the second current mirror circuit. In this embodiment, the compensation current of the first current is generated through the fifth transistor and the fourth resistor. Specifically, the compensation current can be equal to the difference between the third current output by the constant current source circuit 13 and the second current output by the first current mirror circuit 12. Illustratively, the fifth transistor is a PMOS transistor.

[0067] In the embodiment of the present application, the second current mirror circuit 15 can include an operational amplifier, a third transistor, a sixth transistor, a seventh transistor, a fifth resistor and a sixth resistor. Wherein, the positive input terminal of the operational amplifier is connected to the second current source circuit, the negative input terminal of the operational amplifier is connected to the output terminal of the operational amplifier, and the output terminal of the operational amplifier is connected to the second end of the fifth resistor; the source of the third transistor is connected to the power supply, the gate of the third transistor is connected to the first current source circuit, and the drain of the third transistor is connected to the second end of the sixth resistor; the source of the sixth transistor is connected to the power supply, the gate and the drain of the sixth transistor are connected to the first end of the fifth resistor; the gate of the seventh transistor is connected to the gate of the sixth transistor, the source of the seventh transistor is connected to the power supply, and the drain of the seventh transistor is connected to the first end of the sixth resistor; the second end of the sixth resistor is connected to the voltage generation circuit.

[0068] In this embodiment, instead of directly mirroring the current through the transistor, an operational amplifier is added, the compensation current is input to the positive input terminal of the operational amplifier, the output terminal of the operational amplifier is fed back to the negative input terminal, and then the current is mirrored through the transistor, which can further improve the accuracy of the current mirror replication current, thereby providing higher reliability for the subsequent generation of stable reference voltage. When the second current mirror circuit 15 in this example is used in combination with the first current source circuit 11 and the second current source circuit 14 in the foregoing example, the gate of the third transistor is connected to the gate of the first transistor, and the positive input terminal of the operational amplifier is also connected to the second end of the fourth resistor in the foregoing example. Exemplarily, the third transistor, the sixth transistor, and the seventh transistor are PMOS transistors.

[0069] In an embodiment of the present application, the voltage generation circuit 16 can include a second resistor, a first end of the second resistor being connected to the second current mirror circuit, and a second end of the second resistor being grounded. In this embodiment, by flowing the first current and the compensation current through the second resistor, a stable reference voltage is output. The resistance value of the second resistor can be set according to the value of the required reference voltage, so as to achieve a customized stable reference voltage. In a further embodiment, the second resistor can be set as an adjustable resistor, so as to not only achieve a customized stable reference voltage, but also obtain a real-time changing reference voltage by adjusting the resistance value of the second resistor in real time, thereby realizing a more flexible application scenario. When the voltage generation circuit 16 in this example is used in combination with the second current mirror circuit 15 in the foregoing example, the first end of the second resistor is connected to the drain of the third transistor and the second end of the sixth resistor.

[0070] In an embodiment of the present application, the constant current source circuit 13 can include a constant current source, an eighth transistor, and a ninth transistor. The output terminal of the constant current source is connected to the drain of the eighth transistor; the gate of the eighth transistor is connected to the drain of the eighth transistor, and the source of the eighth transistor is grounded; the gate of the ninth transistor is connected to the gate of the eighth transistor, the source of the ninth transistor is grounded, and the drain of the ninth transistor is connected to the first current mirror circuit 12 and the second current source circuit 14. In this embodiment, the constant current source circuit is realized by a constant current source and two transistors, wherein the constant current source can be a nano-ampere constant current source or other constant current sources, as long as the fluctuation range of the output current of the constant current source with temperature change is not in the same order of magnitude as the fluctuation range of the output current of the first current source circuit 11 with temperature change, but is much smaller than the fluctuation range of the output current of the first current source circuit 11 with temperature change. When the constant current source circuit 13 in this example is used in combination with the second current source circuit 14 and the first current mirror circuit 12 in the foregoing example, the drain of the ninth transistor is connected to the second end of the third resistor and the second end of the fourth resistor in the foregoing example. Exemplarily, the eighth transistor and the ninth transistor can be NMOS transistors.

[0071] The following will be described in combination with Figure 2A specific example of the reference voltage generating circuit according to the embodiment of the present application is described, and the circuit diagram shown in the example can be a combination of the above-mentioned multiple examples, but it should be understood that it is only exemplary, and any other structure of circuit can be replaced as long as the corresponding function can be realized Figure 2 .

[0072] As shown in Figure 2 , the transistors P1, P2, the triodes Q1, Q2 and the resistor R1 can constitute the first current source circuit 11 described above. The transistor P4 and the resistor R3 constitute the first current mirror circuit 12. The constant current source, the transistors N1 and N2 constitute the constant current source circuit 13. The transistor P5 and the resistor R4 constitute the second current source circuit 14. The transistors P3, P6, P7, the operational amplifier OP and the resistors R5, R6 constitute the second current mirror circuit 15. R2 constitutes the voltage generating circuit 16. The power supply connected thereto is VCC, and VSS is ground. The specific working process is as follows: the PTAT current is generated on the resistor R1 by using the different current densities of the triodes Q1, Q2, the current is mirrored to the PMOS tubes P1, P3 and P4 through the PMOS tube P2. The current Icon is generated by the current mirror constant current source, which can be considered as a constant current source. The PMOS tubes P4, P5, the NMOS tube N2 and the resistors R3, R4 constitute a current subtraction circuit, and the current with opposite temperature characteristics to the current of R4 is generated on the resistor R5. The following potential Vb of the potential Va of point a is generated by the operational amplifier OP, so that the current of the PMOS tube P6 is equal to P5, and the adaptive compensation current Ic is generated by mirroring to P7. The compensation current Ic and the mirror current Im of the original current converge to flow into the resistor R2, and the reference voltage VBG is generated. The size of the reference voltage can be changed by adjusting the resistance value of the resistor R2.

[0073] The simulation results of the circuit shown in Figures 3 to 7 are described below. Figure 2 The simulation results of the circuit shown in Figure 3 are described below. Figure 4 The simulation results of the circuit shown in Figure 5 are described below. Figure 6 The simulation results of the circuit shown in Figure 7 are described below.

[0074] As shown in Figure 3As shown, when the Im current gradually rises with temperature, the compensation current Ic gradually decreases. This is the same as the idea of different high-order compensation, but by observing the temperature characteristic curve of the current change slope, the compensation of the invention can be quantified and can be very accurate. Figure 4 As can be seen, as the temperature rises, the Im current gradually rises, but the rising slope gradually slows down with the rise in temperature; while the compensation current Ic gradually decreases with the rise in temperature, and the decreasing slope also gradually slows down with the rise in temperature. Whether it is the trend of current change or the change slope of current at each temperature point, Im is self-adaptively complementary to Ic, so the temperature characteristic of the current after the two currents converge is very excellent.

[0075] The Im and Ic currents converge and flow into the adjusting resistor R2 to generate a reference voltage VBG. By changing the resistance value of the adjusting resistor R2, different values of the reference voltage can be obtained. For example, when R2=109Ω, VBG=1.2V; when R2=73KΩ, VBG=800mV; when R2=182KΩ, VBG=2V. As shown in Figure 5 As shown, when VBG=1.2V, in the range of-40℃~50℃, the temperature deviation is only 157uV, and the temperature drift coefficient is only 0.69ppm / ℃. As shown in Figure 6 As shown, when VBG=800mV, in the range of-40℃~50℃, the temperature deviation is only 103uV, and the temperature drift coefficient is only 0.44ppm / ℃. As shown in Figure 7 As shown, when VBG=2V, in the range of-40℃~50℃, the temperature deviation is only 297uV, and the temperature drift coefficient is only 0.78ppm / ℃. As can be seen, the reference voltages of 800mV, 1.2V, and 2V have temperature drift coefficients controlled below 1ppm / ℃, which has the characteristic of ultra-low temperature drift.

[0076] Therefore, the present application provides an ultra-low temperature drift, adjustable, self-adaptive compensation voltage reference circuit, which has the characteristic of ultra-low temperature drift, regardless of the reference voltage of 800mV, 1.2V, or 2V, the temperature drift coefficient is controlled below 1ppm / ℃. Since the circuit is self-adaptive, it can track the change of the direct current value and the change of the current change slope, so it can quantitatively compensate the temperature characteristic, which is different from the general directional high-order compensation method. Moreover, the circuit has adjustability, and different direct current values of the reference voltage can be obtained by changing the resistance value of the adjusting resistor, whether it is a boost or a buck, which is not limited by the driving capacity of the reference circuit, which is different from the voltage type bandgap reference. Finally, the circuit has universality, because it uses self-adaptive adjustment, it can compensate any temperature characteristic current, and is not limited to PTAT / CTAT current.

[0077] According to another aspect of the present application, a chip is also provided, which includes the reference voltage generation circuit according to the embodiments of the present application.

[0078] According to still another aspect of the present application, an electronic device is also provided, which includes the chip as described above.

[0079] Although the example embodiments have been described herein with reference to the accompanying drawings, it is to be understood that the example embodiments are only exemplary and are not intended to limit the scope of the present application. Those skilled in the art can make various changes and modifications without departing from the scope and spirit of the present application. All such changes and modifications are intended to be included within the scope of the present application as claimed in the appended claims.

[0080] Those skilled in the art can realize that the units and algorithm steps of each example described in connection with the embodiments disclosed herein can be realized in electronic hardware, or a combination of computer software and electronic hardware. Whether the functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of the present application.

[0081] In several embodiments provided in the present application, it should be understood that the disclosed devices and methods can be implemented in other ways. For example, the device embodiments described above are merely illustrative, for example, the division of units is only a logical function division, and actual implementation can have another division manner, for example, multiple units or components can be combined or integrated into another device, or some features can be omitted or not executed.

[0082] In the specification provided herein, a large number of specific details are described. However, it can be understood that the embodiments of the present application can be practiced without these specific details. In some examples, well-known methods, structures and techniques are not described in detail in order not to obscure the understanding of the present specification.

[0083] Similarly, it is to be understood that the features of the present application that are of a generic nature can be equally applied to any one or more of the various aspects herein described. For example, the features of the various aspects can be combined in any combination. Similarly, it is to be understood that, for brevity and clarity, in the description of the example embodiments of the application, various features of the application are sometimes grouped together in a single embodiment, figure, or description of related features. However, this is not to be interpreted as reflecting an intention that the features must be used together in a single embodiment, or that they cannot be claimed in different claims, in separate embodiments. More specifically, aspects of the present application can be claimed in any combination.

[0084] Those skilled in the art will appreciate that all features described in this specification (including the summaries of the application and the abstract), and / or all elements of the device and / or method described herein, can be claimed in any combination. Unless otherwise stated, each feature described in this specification (including the summaries of the application and the abstract) can be replaced by alternative features serving the same, equivalent or a similar purpose.

[0085] Furthermore, those skilled in the art will recognize that brains can be combined in a variety of ways to create many embodiments of the application and that the scope of the present application encompasses all possible combinations.

[0086] Various component embodiments of the present application can be implemented in hardware, or as software modules running in one or more processors, or in combinations thereof. Those skilled in the art will appreciate that a microprocessor or digital signal processor (DSP) can be used in practice to implement some or all of the functions of some of the modules of the item analysis apparatus according to embodiments of the present application. The present application can also be implemented as a program for executing part or all of the methods described herein on a computer (for example, a computer program and a computer program product). Such a program implementing the present application can be stored on a computer-readable medium, or can have the form of one or more signals. Such a signal can be downloaded from an Internet website, or provided on a carrier signal, or in any other form.

[0087] It should be noted that the above-mentioned embodiments illustrate rather than limit the application, and that one skilled in the art will be able to design many alternative embodiments without departing from the scope of the appended claims. In the claims, any reference signs placed between parentheses shall not be construed as limiting the claim. The word "comprising" does not exclude the presence of elements or steps other than those listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. The application can be implemented by means of both hardware and software, and any combination thereof. In a unitary claim, several devices or sub-claims can be joined by means of the expression "and / or". The use of the term "at least" followed by a list of one or more items should be interpreted as including at least one of the items but it does not exclude the presence of others not listed. The use of the term "one" followed by a list of one or more items should be interpreted as including at least one of the items but it does not exclude the presence of others not listed. It is emphasized that the terms "comprises / comprising" when used in this specification are taken to specify the presence of stated features, integers, steps or components but do not preclude the presence or addition of one or more other features, integers, steps, components or groups thereof.

[0088] Any discussion of documents, acts, materials, devices, articles or the like that has been included in the present application is not an admission that any or all of these matters form part of the prior art base, add background, constitute common general knowledge, or are prior art against a claim of the present application, or that they are required for the surrender of the application.

Claims

1. A reference voltage generating circuit, characterized in that, The reference voltage generating circuit includes: A first current source circuit is used to output a first current, which has a first temperature characteristic. A first current mirror circuit is connected to the first current source circuit and is used to generate a second current based on the first current, wherein the second current is a mirror current of the first current. A constant current source circuit is connected to the first current mirror circuit and the second current source circuit to output a third current, which is a constant current. The second current source circuit is used to generate a fourth current based on the second current and the third current, the fourth current being a compensation current for the first current, and the fourth current having a second temperature characteristic, the first temperature characteristic being the opposite of the second temperature characteristic; The second current mirror circuit is connected to the second current source circuit and is used to generate a fifth current based on the fourth current, wherein the fifth current is a mirror current of the fourth current. A voltage generation circuit, connected to the first current source circuit and the second current mirror circuit, is used to generate a reference voltage based on the first current and the fifth current.

2. The reference voltage generating circuit according to claim 1, characterized in that, The first current source circuit is a positive temperature coefficient current source, the first current is a positive temperature coefficient current, and the fourth current is a negative temperature coefficient current.

3. The reference voltage generating circuit according to claim 2, characterized in that, The first current source circuit includes: The first transistor has its gate connected to the gate of the second transistor, its source connected to a power supply, and its drain connected to the collector of the first transistor. The second transistor has its gate connected to its drain and its source connected to the power supply. The first transistor has its base connected to its collector and its emitter grounded. The base of the second transistor is connected to the base of the first transistor, the collector of the second transistor is connected to the drain of the second transistor, and the emitter of the second transistor is connected to the first terminal of the first resistor. The first resistor has its second terminal grounded.

4. The reference voltage generating circuit according to claim 1, characterized in that, The first current mirror circuit includes: The fourth transistor has its gate connected to the first current source circuit, its source connected to the power supply, and its drain connected to the first terminal of the third resistor. The third resistor has its second end connected to the constant current source circuit and the second current source circuit.

5. The reference voltage generating circuit according to claim 1, characterized in that, The second current source circuit includes: The fifth transistor has its gate and drain connected to the first terminal of the fourth resistor, and its source connected to the power supply. The fourth resistor has its second end connected to the constant current source circuit and the second current mirror circuit.

6. The reference voltage generating circuit according to claim 1, characterized in that, The second current mirror circuit includes: An operational amplifier, wherein the positive input terminal of the operational amplifier is connected to the second current source circuit, the negative input terminal of the operational amplifier is connected to the output terminal of the operational amplifier, and the output terminal of the operational amplifier is connected to the second terminal of the fifth resistor; The third transistor has its source connected to a power supply, its gate connected to the first current source circuit, and its drain connected to the second terminal of the sixth resistor. A sixth transistor, wherein the source of the sixth transistor is connected to the power supply, and the gate and drain of the sixth transistor are connected to the first terminal of the fifth resistor; A seventh transistor, the gate of which is connected to the gate of the sixth transistor, the source of which is connected to the power supply, and the drain of which is connected to the first terminal of the sixth resistor; The sixth resistor, the second end of which is connected to the voltage generation circuit.

7. The reference voltage generating circuit according to claim 1, characterized in that, The voltage generation circuit includes: The second resistor has its first end connected to the second current mirror circuit and its second end grounded.

8. The reference voltage generating circuit according to claim 7, characterized in that, The second resistor is an adjustable resistor.

9. The reference voltage generating circuit according to claim 1, characterized in that, The constant current source circuit includes: A constant current source, the output of which is connected to the drain of an eighth transistor; The eighth transistor has its gate connected to its drain and its source grounded. The ninth transistor has its gate connected to the gate of the eighth transistor, its source grounded, and its drain connected to the first current mirror circuit and the second current source circuit.

10. The reference voltage generating circuit according to claim 1, characterized in that, The first current source circuit is a negative temperature coefficient current source, the first current is a negative temperature coefficient current, and the fourth current is a positive temperature coefficient current.

11. A chip, characterized in that, The chip includes a reference voltage generation circuit as described in any one of claims 1-10.

12. An electronic device, characterized in that, The electronic device includes the chip of claim 11.

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