Ceramic planar transformer and power supply module

Abstract

The embodiment of the invention provides a ceramic planar transformer and a power module. The ceramic planar transformer comprises a first dielectric layer, a second dielectric layer and a coil assembly, the coil assembly is arranged on the first dielectric layer; the first dielectric layer is provided with a first through hole and is filled with a conductive substance; the second dielectric layers are arranged above and below the first dielectric layer; the relative permeability of the second dielectric layer is higher than that of the first dielectric layer; the relative permeability of the conductive substance is higher than the relative permeability of the first dielectric layer. According to the embodiment of the invention, the first through hole is filled with the conductive substance, and the first through hole filled with the conductive substance can connect the second dielectric layers above and below the first dielectric layer to form a low-magnetic-resistance magnetic conduction path, so that the coupling coefficient between the primary winding and the secondary winding in the coil assembly is improved.

Description

Technical Field

[0001] The present application relates to the technical field of transformers, and in particular to a ceramic planar transformer and a power module. Background Art

[0002] Compared with conventional transformers, the size of the conductive material of the ceramic planar transformer is greatly reduced, especially the height is reduced the most. This feature is quite attractive in power supply equipment where space is strictly limited, so it can become the preferred magnetic component in many power supply equipment.

[0003] However, the ceramic planar transformer in the related art still has the disadvantage of large leakage inductance. Therefore, there is an urgent need for a ceramic planar transformer with smaller leakage inductance. Summary of the invention

[0004] The purpose of the embodiments of the present application is to provide a ceramic planar transformer and a power module, which have smaller leakage inductance and lower processing difficulty.

[0005] In a first aspect, an embodiment of the present application provides a ceramic planar transformer, comprising:

[0006] A first dielectric layer, a second dielectric layer, and a coil assembly;

[0007] The coil assembly is arranged on the first dielectric layer;

[0008] The second dielectric layer is disposed above and below the first dielectric layer;

[0009] The first dielectric layer is provided with a first through hole filled with a conductive material;

[0010] The relative magnetic permeability of the second dielectric layer is higher than the relative magnetic permeability of the first dielectric layer;

[0011] The relative magnetic permeability of the conductive material is higher than the relative magnetic permeability of the first dielectric layer.

[0012] In some embodiments of the present application, a conductive material is filled in the first through hole. The first through hole filled with the conductive material can connect the second dielectric layers above and below the first dielectric layer to form a magnetic conductive path with low magnetic resistance, thereby improving the coupling coefficient between the primary winding and the secondary winding in the coil assembly.

[0013] In some embodiments of the present application, the first dielectric layer includes: at least one first sub-dielectric layer, and the second dielectric layer includes: at least one second sub-dielectric layer;

[0014] The coil assembly includes: a primary winding and a secondary winding, wherein the secondary winding is arranged on both sides of the primary winding, and the primary winding and the secondary winding respectively include one or more coils;

[0015] The coils of the primary windings or the coils of the secondary windings on different first sub-dielectric layers are electrically connected via the conductive material in the first through hole on the first sub-dielectric layer;

[0016] The primary winding and the secondary winding on different first sub-dielectric layers are electrically connected to the second dielectric layer at the end of the first dielectric layer;

[0017] At least one first sub-medium layer is provided with the first through hole.

[0018] In some embodiments of the present application, the first through hole is disposed in a middle region of the coil assembly.

[0019] In some embodiments of the present application, a first through hole is arranged in a middle area of ​​the coil assembly. The first through hole filled with a conductive material can connect the second dielectric layers above and below the first dielectric layer to form a low magnetic resistance magnetic path, especially providing a low magnetic resistance channel for the magnetic flux generated in the middle of the coil assembly, thereby improving the coupling coefficient of the primary winding and the secondary winding in the coil assembly.

[0020] In some embodiments of the present application, the first through hole is disposed in an outer area of ​​the coil assembly.

[0021] In some embodiments of the present application, by arranging a first through hole outside the coil assembly, the first through hole filled with a conductive material can connect the second dielectric layers above and below the first dielectric layer to form a low magnetic resistance magnetic path, especially providing a low magnetic resistance channel for the magnetic flux generated outside the coil assembly, thereby improving the coupling coefficient of the primary winding and the secondary winding in the coil assembly.

[0022] In some embodiments of the present application, the coil assembly includes: the first through hole is arranged in an area surrounded by a central coil among the multiple coils.

[0023] In some embodiments of the present application, by arranging the first through hole in the area surrounded by the coil located in the center, the first through hole filled with a conductive material can connect the second dielectric layers above and below the first dielectric layer to form a low magnetic resistance magnetic path, especially providing a low magnetic resistance channel for the magnetic flux generated in the center of the coil assembly, thereby improving the coupling coefficient of the primary winding and the secondary winding in the coil assembly.

[0024] In some embodiments of the present application, the first through hole penetrates the second dielectric layer.

[0025] In some embodiments of the present application, the first dielectric layer and the second dielectric layer are respectively made of nickel-zinc ferrite, nickel-zinc-copper ferrite, manganese-zinc ferrite or metal powder magnetic film.

[0026] In some embodiments of the present application, the first dielectric layer and the second dielectric layer are respectively made of nickel-zinc ferrite, nickel-zinc-copper ferrite, manganese-zinc ferrite or metal powder magnetic film. Nickel-zinc ferrite, nickel-zinc-copper ferrite, manganese-zinc ferrite or metal powder magnetic film has good magnetic permeability, which can further enhance the ability of the first dielectric layer and the second dielectric layer to absorb magnetic flux and improve the coupling coefficient of the primary winding and the secondary winding in the coil assembly.

[0027] In some embodiments of the present application, the ceramic planar transformer is manufactured by using a low-temperature co-fired ceramic process or a high-temperature co-fired ceramic process.

[0028] In some embodiments of the present application, a ceramic planar transformer is manufactured using a low-temperature co-fired ceramic process or a high-temperature co-fired ceramic process, which can further reduce the volume of the ceramic planar transformer.

[0029] Other features and advantages disclosed in the present application will be described in the following description, or some features and advantages can be inferred or determined without doubt from the description, or can be learned by implementing the above-mentioned technology disclosed in the present application.

[0030] In order to make the above-mentioned objects, features and advantages of the present application more obvious and easy to understand, preferred embodiments are specifically cited below and described in detail with reference to the attached drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments of the present application will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0032] Figure 1 A schematic diagram of the structure of a ceramic planar transformer provided in an embodiment of the present application;

[0033] Figure 2 A partial cross-sectional schematic diagram of a ceramic planar transformer provided in an embodiment of the present application;

[0034] Figure 3 Another partial cross-sectional schematic diagram of the ceramic planar transformer provided in an embodiment of the present application;

[0035] Figure 4 A schematic diagram of another part of the structure of the ceramic planar transformer provided in an embodiment of the present application;

[0036] Figure 5 A schematic diagram of another part of the structure of the ceramic planar transformer provided in an embodiment of the present application;

[0037] Figure 6 A schematic diagram of another part of the structure of the ceramic planar transformer provided in an embodiment of the present application;

[0038] Figure 7 A schematic diagram of another part of the structure of the ceramic planar transformer provided in an embodiment of the present application;

[0039] Figure 8 This is another partial structural schematic diagram of the ceramic planar transformer provided in an embodiment of the present application.

[0040] Reference numerals

[0041] 11 - first dielectric layer; 111 - first sub-dielectric layer; 12 - first through hole; 13 - coil assembly; 14 - second dielectric layer. DETAILED DESCRIPTION

[0042] The technical solutions in the embodiments of the present application will be described below in conjunction with the drawings in the embodiments of the present application.

[0043] It should be noted that similar reference numerals and letters represent similar items in the following drawings, so once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings. At the same time, in the description of this application, the terms "first", "second", etc. are only used to distinguish the description and cannot be understood as indicating or implying relative importance.

[0044] The terms "first", "second", etc. in the specification embodiments, claims, and drawings of the present application are only used for the purpose of distinguishing descriptions, and cannot be understood as indicating or implying relative importance, nor can they be understood as indicating or implying order. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, including a series of steps or units. The method, system, product, or device is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products, or devices.

[0045] It should be understood that in the present application, "at least one (item)" means one or more, and "plurality" means two or more. "And / or" is used to describe the association relationship of associated objects, indicating that three relationships may exist. For example, "A and / or B" can mean: only A exists, only B exists, and A and B exist at the same time, where A and B can be singular or plural. The character " / " generally indicates that the objects associated before and after are in an "or" relationship. "At least one of the following" or similar expressions refers to any combination of these items, including any combination of single or plural items. For example, at least one of a, b or c can mean: a, b, c, "a and b", "a and c", "b and c", or "a and b and c", where a, b, c can be single or multiple.

[0046] According to the structural type, high-frequency transformers can be divided into winding transformers and ceramic planar transformers. The following is an introduction to winding transformers and ceramic planar transformers respectively:

[0047] (1) A wound transformer includes a frame, a coil and a magnetic core. The coil is wound on the frame, and the coil and the magnetic core can be assembled together. A wound transformer has the advantages of low cost and low DC resistance of the winding, but it also has the disadvantages of low processing efficiency, poor performance consistency and relatively large size.

[0048] (2) Planar transformers can be divided into printed circuit board (PCB) planar transformers (which can be called PCB planar transformers) and co-fired magnetic ceramic planar transformers.

[0049] Among them, the PCB planar transformer may include a matching assembled printed circuit board (with a primary winding and a secondary coil) and a magnetic core (which may adopt an E-type structure or an RM-type structure, etc.). The PCB planar transformer has the advantages of low height, small size, rapid mass production, and good performance consistency.

[0050] Among them, the co-fired magnetic ceramic planar transformer can generally include a low temperature co-fired ceramics planar transformer (can be called LTCC planar transformer) and a high temperature co-fired ceramics planar transformer (can be called HTCC planar transformer).

[0051] LTCC planar transformers usually include a multi-layer magnetic ceramic substrate printed with primary and secondary windings. The multi-layer ceramic substrate can be stacked and sintered at a temperature below 950°C. Since the magnetic ceramic substrate itself has a certain relative magnetic permeability, the LTCC planar transformer does not need to assemble an additional magnetic core. The stacked and sintered ceramic substrate has the function of a high-frequency transformer. Therefore, compared with PCB planar transformers, LTCC planar transformers are lower in height and smaller in size.

[0052] At the same time, since the magnetic ceramic substrate between the primary winding and the secondary winding in the LTCC planar transformer has a certain relative magnetic permeability, when the transformer is working, the magnetic flux generated by the primary winding will pass through the magnetic ceramic substrate between the primary winding and the secondary winding, resulting in the magnetic flux generated by the primary winding not being coupled by the secondary winding, and the leakage magnetic flux of the primary winding is large. Therefore, the LTCC planar transformer has a problem of large leakage inductance.

[0053] In order to solve the technical problems of large leakage inductance and low coupling coefficient between the primary winding and the secondary winding in the existing planar transformer, the present application provides a planar transformer and a power module.

[0054] See also Figures 1 to 8 , the planar transformer 1 comprises: a first dielectric layer 11, a second dielectric layer 14, and a coil assembly 13;

[0055] The coil assembly 13 is arranged on the first dielectric layer 11;

[0056] The second dielectric layer 14 is disposed above and below the first dielectric layer 11;

[0057] The first dielectric layer 11 is provided with a first through hole 12 filled with a conductive material;

[0058] The relative magnetic permeability of the second dielectric layer 14 is higher than the relative magnetic permeability of the first dielectric layer 11;

[0059] The relative magnetic permeability of the conductive material is higher than the relative magnetic permeability of the first dielectric layer 11 .

[0060] It should be noted that this embodiment does not limit the shape of the first through hole 12 .

[0061] In some embodiments, the number of the first through hole 12 may be one or more.

[0062] In some embodiments, relative permeability is an electrical term that refers to the magnetic permeability of a particular medium and the magnetic permeability of a vacuum μ 0 ratio.

[0063] In other words, the relative magnetic permeability μ of a conductive material is r2 Greater than the relative magnetic permeability μ of the first dielectric layer 11 r1 .

[0064] That is, the magnetic permeability μ2 and μ 0 The ratio is greater than that of the first dielectric layer 11μ1 and μ 0 ratio.

[0065] Therefore, the conductive material can be called a medium with high magnetic permeability, and the first dielectric layer 11 can be called a medium with low magnetic permeability.

[0066] In the embodiment of the present application, a conductive material is filled in the first through hole 12. The first through hole 12 filled with the conductive material can connect the second dielectric layer 14 above and below the first dielectric layer 11 to form a magnetic conductive path with low magnetic resistance, thereby improving the coupling coefficient between the primary winding and the secondary winding in the coil assembly 13.

[0067] The first dielectric layer 11 includes: at least one first sub-dielectric layer 111, and the second dielectric layer 14 includes: at least one second sub-dielectric layer; the coil assembly 13 includes: a primary winding and a secondary winding, and the secondary winding is arranged on both sides of the primary winding, and the primary winding and the secondary winding respectively include one or more coils; the coils of the primary windings or the coils of the secondary windings on different first sub-dielectric layers 111 are electrically connected through the conductive material in the second through hole (not shown in the figure) on the first sub-dielectric layer 111; the primary windings and the secondary windings on different first sub-dielectric layers 111 are electrically connected to the second dielectric layer 14 at the end of the first dielectric layer 11; at least one first sub-dielectric layer 111 is provided with the first through hole 12.

[0068] See also Figure 3 , Figure 4 In some embodiments, the first dielectric layer 11 at least includes: at least one first sub-dielectric layer 111 ; at least one first sub-dielectric layer 111 is provided with the first through hole 12 .

[0069] In some embodiments, the first dielectric layer 11 includes: 2 or more first sub-dielectric layers 111, wherein the multiple first sub-dielectric layers 111 are stacked to form the first sub-dielectric layer 111. Moreover, a first through hole 12 is disposed in one of the multiple first sub-dielectric layers 111.

[0070] In some implementations, the first dielectric layer 11 includes: 2 or more first sub-dielectric layers 111, and the multiple first sub-dielectric layers 111 are stacked to form the first dielectric layer 11. In addition, the two outermost first sub-dielectric layers 111 are provided with first through holes 12.

[0071] For example, see Figure 3 The first dielectric layer 11 includes three first sub-dielectric layers 111 , and the two outermost first sub-dielectric layers 111 of the three first sub-dielectric layers 111 are provided with first through holes 12 .

[0072] In some embodiments, the first dielectric layer 11 includes: 2 or more first sub-dielectric layers 111, wherein the multiple first sub-dielectric layers 111 are stacked to form the first sub-dielectric layer 111. Furthermore, at least two of the multiple first sub-dielectric layers 111 are provided with first through holes 12.

[0073] In some embodiments, the first dielectric layer 11 includes: 2 or more first sub-dielectric layers 111 , the multiple first sub-dielectric layers 111 are stacked to form the first sub-dielectric layer 111 , and each first sub-dielectric layer 111 is provided with a first through hole 12 .

[0074] In some embodiments, the first dielectric layer 11 includes: 2 or more first sub-dielectric layers 111, multiple first sub-dielectric layers 111 are stacked to form the first sub-dielectric layer 111, and each first sub-dielectric layer 111 is provided with a first through hole 12, and the first through holes 12 on each first sub-dielectric layer 111 are interconnected.

[0075] For example, see Figure 4 The first dielectric layer 11 includes: three first sub-dielectric layers 111 , each of the three first sub-dielectric layers 111 is provided with a first through hole 12 , and the first through holes 12 on the three first sub-dielectric layers 111 are connected.

[0076] In some embodiments, the first dielectric layer 11 includes: a first sub-dielectric layer 111 .

[0077] In some embodiments of the present application, a conductive material with low magnetic permeability is arranged in the first through hole 12. The first through hole 12 provided with the conductive material can provide a low magnetic resistance channel for the coil component 13 arranged on the first dielectric layer 11 during operation, thereby improving the coupling coefficient between the primary winding and the secondary winding in the coil component 13.

[0078] In some embodiments, when the first dielectric layer 11 includes two or more first sub-dielectric layers 111 , and the coil assembly 13 includes a plurality of coils, the plurality of coils may be disposed on different first sub-dielectric layers 111 .

[0079] In some embodiments, coils on different first sub-dielectric layers 111 are connected via conductive paste inside second through holes provided on the first sub-dielectric layer 111 to form a primary winding or a secondary winding.

[0080] Optionally, the plurality of first sub-dielectric layers 111 are numbered in a stacking order from top to bottom or from bottom to top, and the plurality of coils may be arranged on the first dielectric layer 11 in the following manner. The coil assembly 13 includes: a coil C1 constituting a primary winding and a coil C2 constituting a secondary winding, and the coil C1 and the coil C2 are coupled via magnetic flux.

[0081] Method 1: One or more coils C1 are provided on the first sub-dielectric layer 111 with an odd number (which may be all the first sub-dielectric layers 111 with an odd number), and one or more coils C2 are provided on the first sub-dielectric layer 111 with an even number (which may be all the first sub-dielectric layers 111 with an even number).

[0082] That is, the first sub-dielectric layers 111 with odd numbers are provided with one or more coils C1, and none of them are provided with one or more coils C2. The first sub-dielectric layers 111 with even numbers are provided with one or more coils C2, and none of them are provided with one or more coils C1.

[0083] Method 2: Assume that the first sub-dielectric layer 111 has an even number of layers (which can be represented by N), and one or more coils C1 are respectively arranged on the first sub-dielectric layer 111 numbered N / 2 and the first sub-dielectric layer 111 before numbered N / 2, and one or more coils C2 are respectively arranged on the first sub-dielectric layer 111 after numbered N / 2.

[0084] That is, one or more coils C1 are respectively arranged on the first sub-dielectric layer 111 with the serial number N / 2 and the first sub-dielectric layer 111 before the serial number N / 2, and one or more coils C2 are not arranged on either. One or more coils C2 are respectively arranged on the first sub-dielectric layer 111 after the serial number N / 2, and one or more coils C1 are not arranged on either.

[0085] Mode 3: One or more coils C1 and one or more coils C2 are respectively arranged on each first sub-dielectric layer 111 .

[0086] It should be noted that the embodiments of the present application only provide several possible settings for coils C1 and C2. Of course, coils C1 and C2 can also be set in other ways besides the several ways provided in the embodiments of the present application (that is, coils C1 and C2 are not limited to the settings provided in the embodiments of the present application), and the embodiments of the present application do not limit this.

[0087] In some embodiments, the first through hole 12 passes through the second dielectric layer 14 .

[0088] In some embodiments, one or more first through holes 12 penetrate all first sub-dielectric layers 111 .

[0089] In some embodiments, one or more first through holes 12 penetrate all the second sub-dielectric layers.

[0090] In some embodiments, one or more first through holes 12 partially penetrate the second sub-dielectric layer.

[0091] For example, see Figure 3 The first dielectric layer 11 has three first sub-dielectric layers 111 . The first sub-dielectric layer 111 is provided with a first through hole 12 . The first through hole 12 passes through the three first sub-dielectric layers 111 .

[0092] In some embodiments of the present application, a second dielectric layer 14 is stacked with the first dielectric layer 11, and the relative magnetic permeability of the second dielectric layer 14 is greater than the relative magnetic permeability of the first dielectric layer 11. The second dielectric layer 14 can absorb the magnetic flux generated by the coil assembly 13 on the first dielectric layer 11 during operation, thereby reducing the magnetic permeability of the primary winding and the secondary winding in the coil assembly 13.

[0093] In some embodiments of the present application, the second dielectric layer 14 includes: at least one second sub-dielectric layer; and a plurality of second sub-dielectric layers are stacked.

[0094] Optionally, the relative magnetic permeability μ of the second dielectric layer 14 is r 3 The relative magnetic permeability of the first dielectric layer 11 is greater than μ r1 The relative magnetic permeability.

[0095] That is to say, the magnetic permeability μ of the second dielectric layer 14 is 3 and μ 0 The ratio is greater than the ratio of μ1 and μ0 of the first dielectric layer 11.

[0096] Therefore, the second dielectric layer 14 can be called a medium with high magnetic permeability, and the first dielectric layer 11 can be called a medium with low magnetic permeability.

[0097] In some embodiments of the present application, the first through hole 12 is disposed in a middle region of the coil assembly 13 .

[0098] In some embodiments of the present application, the middle region refers to a region between multiple coils.

[0099] See also Figure 5 In some embodiments, the coil assembly 13 includes a plurality of coils, and a first through hole 12 is disposed between the plurality of coils.

[0100] In some embodiments of the present application, the first through hole 12 is arranged in the middle area of ​​the coil assembly 13. The first through hole 12 filled with a conductive material can connect the second dielectric layer 14 above and below the first dielectric layer 11 to form a low magnetic resistance magnetic path, especially providing a low magnetic resistance channel for the magnetic flux generated in the middle of the coil assembly 13, thereby improving the coupling coefficient of the primary winding and the secondary winding in the coil assembly 13.

[0101] In some embodiments of the present application, the coil assembly 13 includes: a plurality of coils; and the first through hole 12 is arranged in an area surrounded by a central coil among the plurality of coils.

[0102] In some embodiments, the first through hole 12 is disposed on the first sub-dielectric layer 111 where the coil located in the center is located.

[0103] That is to say, in some embodiments of the present application, the middle area refers to the area surrounded by the coil located in the center among the multiple coils of the coil assembly 13 .

[0104] For example, see Figure 6 As an example, the first dielectric layer 11 includes a first sub-dielectric layer 111 , three coils are arranged on the first sub-dielectric layer 111 , a first through hole 12 is arranged in the central area surrounded by the innermost coil, and a conductive material is arranged in the first through hole 12 .

[0105] In some embodiments of the present application, by arranging the first through hole 12 in the area surrounded by the coil located in the center, the first through hole 12 filled with a conductive material can connect the second dielectric layer 14 located above and below the first dielectric layer 11 to form a low magnetic resistance magnetic path, especially providing a low magnetic resistance channel for the magnetic flux generated in the center of the coil assembly 13, thereby improving the coupling coefficient of the primary winding and the secondary winding in the coil assembly 13.

[0106] In some embodiments of the present application, the first through hole 12 is disposed in an outer area of ​​the coil assembly 13 .

[0107] As an example, see Figure 7 The first dielectric layer 11 includes a first dielectric layer 11 , and four vertices of the first dielectric layer 11 are each provided with a first through hole 12 .

[0108] In some embodiments of the present application, the first through hole 12 is disposed in both the middle region and the outer region of the coil assembly 13 .

[0109] In some embodiments of the present application, the first dielectric layer 11 and the second dielectric layer 14 are respectively made of nickel-zinc ferrite, nickel-zinc-copper ferrite, manganese-zinc ferrite or metal powder magnetic film.

[0110] In some embodiments of the present application, the first dielectric layer 11 and the second dielectric layer 14 are respectively made of nickel-zinc ferrite, nickel-zinc-copper ferrite, manganese-zinc ferrite or metal powder magnetic film. Nickel-zinc ferrite, nickel-zinc-copper ferrite, manganese-zinc ferrite or metal powder magnetic film has good magnetic permeability, which can further enhance the ability of the first dielectric layer 11 and the second dielectric layer 14 to absorb magnetic flux, and improve the coupling coefficient between the primary winding and the secondary winding in the coil assembly 13.

[0111] In some embodiments of the present application, the ceramic planar transformer is made by a low temperature co-fired ceramics (LTCC) process (i.e., LTCC process) or a high temperature co-fired ceramics (HTCC) process (i.e., HTCC process). Of course, it can also be made by other sintering processes, which is not limited in the embodiments of the present application.

[0112] See also Figure 1 The present application provides a simulation embodiment, in which a ceramic planar transformer comprises: a first dielectric layer 11 and a second dielectric layer 14; a coil assembly 13 is arranged on the first dielectric layer 11, and the coil assembly 13 comprises: a primary winding and a secondary winding; the second dielectric layer 14 is arranged on both sides of the first dielectric layer 11; a first through hole 12 is arranged on the first dielectric layer 11, and a conductive material is arranged in the first through hole 12; three first through holes 12 are arranged at the four vertices of the first dielectric layer 11, and nine through holes are arranged in the area surrounded by the innermost coil of the coil assembly 13. Based on the simulation of the ceramic planar transformer, the simulation structure shows that the coupling coefficient of the primary winding and the secondary winding is above 0.983.

[0113] In some embodiments of the present application, a ceramic planar transformer is manufactured using a low-temperature co-fired ceramic process or a high-temperature co-fired ceramic process, which can further reduce the volume of the ceramic planar transformer.

[0114] An embodiment of the present application also provides a power module, comprising the ceramic planar transformer and the semiconductor device of any of the above embodiments.

[0115] The ceramic planar transformer is used as a substrate carrier, and a soldering pad is provided on the ceramic planar transformer, and the semiconductor device can be soldered on the soldering pad.

[0116] In some embodiments, the semiconductor device may be a chip, a resistor, or a capacitor, which is not limited in this embodiment.

[0117] The above are only embodiments of the present application and are not intended to limit the scope of protection of the present application. For those skilled in the art, the present application may have various changes and variations. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application should be included in the scope of protection of the present application. It should be noted that similar reference numerals and letters represent similar items in the following drawings, so once an item is defined in one drawing, it does not need to be further defined and explained in the subsequent drawings.

[0118] The above are only specific implementations of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

[0119] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

Claims

1. A ceramic planar transformer, characterized in that: include: A first dielectric layer, a second dielectric layer, and a coil assembly; The coil assembly is arranged on the first dielectric layer; The second dielectric layer is disposed above and below the first dielectric layer; The first dielectric layer is provided with a first through hole filled with a conductive material; The relative magnetic permeability of the second dielectric layer is higher than the relative magnetic permeability of the first dielectric layer; The relative magnetic permeability of the conductive material is higher than the relative magnetic permeability of the first dielectric layer.

2. The ceramic planar transformer according to claim 1, characterized in that: The first dielectric layer comprises: at least one first sub-dielectric layer, and the second dielectric layer comprises: at least one second sub-dielectric layer; The coil assembly includes: a primary winding and a secondary winding, wherein the secondary winding is arranged on both sides of the primary winding, and the primary winding and the secondary winding respectively include one or more coils; The coils of the primary windings or the coils of the secondary windings on different first sub-dielectric layers are electrically connected via the conductive material in the first through hole on the first sub-dielectric layer; The primary winding and the secondary winding on different first sub-dielectric layers are electrically connected to the second dielectric layer at the end of the first dielectric layer; At least one first sub-medium layer is provided with the first through hole.

3. The ceramic planar transformer according to claim 1 or 2, characterized in that: The first through hole is disposed in a middle region of the coil component.

4. The ceramic planar transformer according to claim 1 or 2, characterized in that: The first through hole is disposed in an outer area of ​​the coil assembly.

5. The ceramic planar transformer according to claim 2, characterized in that: The first through hole is disposed in a region surrounded by a central coil among the plurality of coils.

6. The ceramic planar transformer according to claim 1, characterized in that: The first through hole penetrates the second dielectric layer.

7. The ceramic planar transformer according to claim 1, characterized in that: The first dielectric layer and the second dielectric layer are respectively made of nickel-zinc ferrite, nickel-zinc-copper ferrite, manganese-zinc ferrite or metal powder magnetic film.

8. The ceramic planar transformer according to claim 1, characterized in that: The ceramic planar transformer is manufactured by adopting a low-temperature co-fired ceramic process or a high-temperature co-fired ceramic process.

9. A power module, characterized in that: A ceramic planar transformer comprising any one of claims 1-8.

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