Method for repairing large-scale consistency defects of semiconductor chips using electronic wind force

Abstract

The present invention relates to a method for repairing large-scale consistent defects of semiconductor chips using electronic wind force, belonging to the field of semiconductor technology. This method connects high-frequency alternating current to the semiconductor chips three times, and the current directions of the three high-frequency alternating currents connected are perpendicular to each other. The electrons of the high-frequency alternating current successively impact the atoms inside the semiconductor chips back and forth from three directions, causing the atoms inside the semiconductor chips to be regularly arranged from three directions to positions with lower energy in turn, thereby repairing the defects in the semiconductor chips in the three current directions. This method is targeted at the defects inside the semiconductor chips, making the repair effect more effective; it can repair local defects. By applying an electric field to the local defects, the repair work of the local defects can be completed while ensuring that the rest is not affected.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor technology, and particularly relates to a method for repairing large-scale consistent defects of semiconductor chips by using electronic wind force. Background Art

[0002] Semiconductor chips are widely used in many fields such as industrial electronics, communication technology, medical electronics, and the Internet of Things. They are the core components of products such as smartphones, computers, industrial automation equipment, communication base stations, medical devices, and Internet of Things terminals, responsible for functions such as data processing, transmission, and control. The application of semiconductor chips has greatly promoted the intelligence, efficiency, and interconnection of these fields, playing a crucial role in scientific and technological progress and social development.

[0003] Due to factors such as uneven stress distribution, cutting, or extrusion during the manufacturing or processing of semiconductor chips, micro-nano cracks or other microscopic defects often occur inside, and ultimately, the expansion of microscopic defects often occurs under some extreme working conditions, resulting in permanent damage to the component and inability to achieve the original use effect. Currently, there are various methods to inhibit the generation of defects in materials. For example, many scholars have effectively controlled the generation of defects such as dislocations inside the materials by continuously optimizing and adjusting the processing parameters of the materials; some scholars have also found that coating the materials can reduce the surface defects of the materials. However, these methods cannot completely inhibit or repair the defects inside the materials.

[0004] Currently, the repair methods for semiconductor chips, such as a manufacturing device and a repair method for semiconductor chips disclosed in the invention patent application with the application publication number CN115458447A, and a method for repairing lattice defects on the surface of a wafer epitaxial sheet disclosed in the invention patent application with the application publication number CN118263091A, only repair the surface of the semiconductor chips and cannot repair the internal microscopic defects.

[0005] The invention patent application with the publication number CN101562153A also discloses a semiconductor device and a manufacturing method thereof. This application records a heat treatment repair method, that is, irradiating a laser beam on a single-crystal semiconductor layer to make the single-crystal semiconductor layer in a partially melted state for recrystallization, and then repairing the crystal defects. This repair method requires a long process of heating, holding, and cooling for a long time, with low efficiency. The melting and recrystallization processes will affect the surrounding parts of the defects, and the pertinence is poor. Summary of the Invention

[0006] The object of the present invention is to provide a method for repairing large-scale consistent defects of semiconductor chips using electronic wind force, so as to solve the problems that internal defects cannot be completely suppressed in the existing semiconductor chip manufacturing and processing, and the existing repair methods only stay on the surface repair of semiconductor chips and cannot achieve internal repair, etc.

[0007] In order to achieve the above object, the technical solution of the present invention is as follows:

[0008] The present invention relates to a method for repairing large-scale consistent defects of semiconductor chips using electronic wind force, which includes the following steps: Connect high-frequency alternating current to the semiconductor chip three times, and the current directions of the high-frequency alternating current connected three times are perpendicular to each other. Use the electrons of the high-frequency alternating current to hit the atoms inside the semiconductor chip back and forth from three directions in turn, so that the atoms inside the semiconductor chip are regularly arranged from three directions to positions with lower energy in turn, thereby repairing the defects in the semiconductor chip in the three current directions.

[0009] Preferably, it includes the following steps:

[0010] S1. Pass high-frequency alternating current into the semiconductor chip, so that electrons hit atoms back and forth along the direction of the current, and then make the atoms regularly arrange to positions with lower energy along the impact direction;

[0011] S2. Pass high-frequency alternating current into the semiconductor chip, and the current direction of the high-frequency alternating current passed in this time is perpendicular to the current direction of the high-frequency alternating current passed in S1, so that electrons hit atoms back and forth along the direction of the current, and then make the atoms regularly arrange to positions with lower energy along the impact direction;

[0012] S3. Pass high-frequency alternating current into the semiconductor chip, and the current direction of the high-frequency alternating current passed in this time is perpendicular to the current directions of the high-frequency alternating current passed in S1 and S2, so that electrons hit atoms back and forth along the direction of the current, and then make the atoms regularly arrange to positions with lower energy along the impact direction.

[0013] Preferably, the high-frequency alternating current adopts a combination of one or more of a sine signal, a pulse signal or a triangular wave signal.

[0014] Preferably, before S1, it further includes:

[0015] S0. Clean the semiconductor chip.

[0016] Preferably, after S3, it further includes:

[0017] S4. Perform surface treatment on the semiconductor chip to remove the surface oxide layer that appears during the defect repair process.

[0018] Adopting the technical solution provided by the present invention, compared with the prior art, it has the following beneficial effects:

[0019] The method for repairing large-scale consistent defects of semiconductor chips using electronic wind force according to the present invention accesses high-frequency alternating current to the semiconductor chips three times. The current directions of the three accesses of high-frequency alternating current are perpendicular to each other. The electrons of the high-frequency alternating current successively impact the atoms inside the semiconductor chips from three directions back and forth, causing the atoms inside the semiconductor chips to be regularly arranged from three directions to positions with lower energy in turn, thereby repairing the defects in the semiconductor chips in the three current directions. Compared with heat treatment repair, it does not require the processes of long-time heating, temperature preservation, and cooling, takes less time, and has higher efficiency. The electronic wind force is targeted at the defects inside the semiconductor chips, making the repair effect more effective. It can complete the repair work of local defects while ensuring that the rest is not affected. Description of the Drawings

[0020] Figure 1 Schematic diagram of a semiconductor chip with internal defects;

[0021] Figure 2 Schematic diagram of the first time of introducing high-frequency alternating current into the semiconductor chip;

[0022] Figure 3 Schematic diagram of the second time of introducing high-frequency alternating current into the semiconductor chip;

[0023] Figure 4 Schematic diagram of the third time of introducing high-frequency alternating current into the semiconductor chip;

[0024] Figure 5 Effect diagrams before and after the repair of the defective positions of the semiconductor chip. Detailed Embodiments

[0025] To further understand the content of the present invention, the present invention will be described in detail in combination with embodiments. The following embodiments are used to illustrate the present invention, but are not used to limit the scope of the present invention.

[0026] Embodiment: The method for repairing large-scale consistent defects of semiconductor chips using electronic wind force according to the present invention is used to repair various semiconductor materials, including common semiconductor materials such as silicon, germanium, silicon carbide, silicon nitride, gallium arsenide, semiconductor diamond, etc., as well as various semiconductor materials or metal electrode layers grown or epitaxially grown thereon. The present invention takes the repair of a semiconductor chip as shown in Figure 1 as an example to introduce the repair method of the present invention in detail.

[0027] Refer to the attached Figure 1As shown in the figure, the semiconductor chip involved in the present invention includes a top layer, an intermediate functional layer, and a bottom layer. The top layer contains metal electrode layer materials such as Au, Ag, Cu, Al, etc. or semiconductor materials such as diamond. The intermediate functional layer mainly contains semiconductor materials such as Si, GaAs, GaN, SiC, MoS, etc. or metal materials such as Al, Cu, etc. The bottom layer contains a substrate or an epitaxial substrate material, including semiconductor materials such as Si, GaAs, GaN, SiC, etc. Defects may exist in any one or more of the top layer, intermediate functional layer, and bottom layer of the semiconductor chip.

[0028] The present invention relates to a method for repairing large-scale consistent defects of semiconductor chips using electronic wind force, which includes the following steps: Connect high-frequency alternating current to the semiconductor chip three times, and the current directions of the high-frequency alternating current connected three times are perpendicular to each other. Use the electrons of the high-frequency alternating current to sequentially impact the atoms inside the semiconductor chip from three directions back and forth, so that the atoms inside the semiconductor chip are regularly arranged from three directions to positions with lower energy in turn, thereby repairing the defects in the semiconductor chip in the three current directions. It includes the following steps:

[0029] S0. Clean the semiconductor chip, and remove external impurities such as dust attached to the surface of the semiconductor chip that may affect the electronic wind force repair process through cleaning, so as to keep the semiconductor chip clean.

[0030] S1. As Figure 2 shown in the figure, introduce high-frequency alternating current into the semiconductor chip. In this embodiment, the current direction of the high-frequency alternating current introduced this time is the Z-axis direction, so that the electrons impact the atoms back and forth along the current direction, and then the atoms are regularly arranged from the impact direction to positions with lower energy;

[0031] S2. As Figure 3 shown in the figure, introduce high-frequency alternating current into the semiconductor chip. The current direction of the high-frequency alternating current introduced this time is perpendicular to the current direction of the high-frequency alternating current introduced in S1. In this embodiment, the current direction of the high-frequency alternating current introduced this time is the X-axis direction, so that the electrons impact the atoms back and forth along the current direction, and then the atoms are regularly arranged from the impact direction to positions with lower energy;

[0032] S3. As Figure 4 shown in the figure, introduce high-frequency alternating current into the semiconductor chip. The current direction of the high-frequency alternating current introduced this time is perpendicular to the current directions of the high-frequency alternating current introduced in S1 and S2. In this embodiment, the current direction of the high-frequency alternating current introduced this time is the Y-axis direction, so that the electrons impact the atoms back and forth along the current direction, and then the atoms are regularly arranged from the impact direction to positions with lower energy.

[0033] It should be noted that the sequence of the current directions of the high-frequency alternating current introduced in the X-axis direction, Y-axis direction, and Z-axis direction can be adjusted arbitrarily, and the high-frequency alternating current adopts one or a combination of a sine signal, a pulse signal, or a triangular wave signal.

[0034] S4. Perform surface treatment on the semiconductor chip to remove the surface oxide layer that appears during the defect repair process. The specific method of removing the surface oxide layer belongs to the conventional technical means in the art.

[0035] The repair principle of the present invention is as follows: A high-frequency alternating current (such as a power supply signal such as a sine signal, a pulse signal, or a triangular wave signal) is introduced into the semiconductor chip. Since the defects inside the semiconductor chip are arranged irregularly, the blocking effect of the defects on electrons is more significant. Therefore, the electrons moving at high frequency will continuously and repeatedly impact the atoms in the semiconductor chip, causing the atoms to vibrate under the high-frequency electron wind force, so that the atoms obtain a certain kinetic energy and tend to arrange in the way with the lowest overall energy, that is, the atoms gradually arrange regularly.

[0036] Refer to the attached Figure 5 As shown, Figure 5 On the left is the atomic distribution map of the defect position before repair, and on the right is the atomic distribution map of the defect position after repair. By comparing the atomic distribution maps before and after repair, it can be seen that the atoms at the defect position are regularly arranged after repair, indicating that the defect has been repaired.

[0037] The present invention has been described in detail above in combination with the embodiments, but the above content is only the preferred embodiments of the present invention and cannot be considered as limiting the scope of implementation of the present invention. Any equivalent changes and improvements made within the scope of the application of the present invention should still fall within the scope covered by the patent of the present invention.

Claims

1. A method for repairing large-scale consistent defects of semiconductor chips using electronic wind power, characterized in that: It includes the following steps: High-frequency alternating current is connected to the semiconductor chip three times, and the current directions of the three high-frequency alternating currents are perpendicular to each other. The electrons of the high-frequency alternating current hit the atoms inside the semiconductor chip back and forth from three directions in turn, so that the atoms inside the semiconductor chip are arranged regularly from three directions to positions with lower energy, thereby repairing the defects inside the semiconductor chip in the three current directions.

2. The method for repairing semiconductor chip defects on a large scale using electronic wind power according to claim 1, characterized in that: It includes the following steps: S1. Pass high-frequency alternating current into the semiconductor chip, causing electrons to collide with atoms back and forth along the direction of the current, thereby causing the atoms to be regularly arranged in positions with lower energy along the collision direction; S2. A high-frequency alternating current is introduced into the semiconductor chip. The current direction of the high-frequency alternating current introduced this time is perpendicular to the current direction of the high-frequency alternating current introduced in S1, so that the electrons collide with the atoms back and forth along the direction of the current, thereby causing the atoms to be regularly arranged in positions with lower energy along the collision direction; S3. High-frequency alternating current is passed into the semiconductor chip. The current direction of the high-frequency alternating current passed this time is perpendicular to the current direction of the high-frequency alternating current passed in S1 and S2, so that electrons collide with atoms back and forth along the direction of the current, and then the atoms are arranged regularly along the collision direction to positions with lower energy.

3. The method for repairing semiconductor chip defects on a large scale using electronic wind power according to claim 1 or 2, characterized in that: The high-frequency alternating current adopts a combination of one or more of a sine wave signal, a pulse signal or a triangular wave signal.

4. The method for repairing semiconductor chip defects on a large scale using electronic wind power according to claim 2, characterized in that: The S1 shown also includes: S0. Cleaning semiconductor chips.

5. The method for repairing semiconductor chip defects on a large scale using electronic wind power according to claim 2, characterized in that: The S3 shown also includes: S4. Perform surface treatment on the semiconductor chip to remove the surface oxide layer that appears during the defect repair process.

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