GaN-based micro-disk laser with diamond nano-composite current barrier layer

Abstract

The invention relates to a GaN-based micro-disk laser with a diamond nano-composite current barrier layer. The laser comprises a substrate layer and a lower contact layer which are sequentially arranged along the epitaxial growth direction of a chip, the middle of the upper surface of the lower contact layer is a lower cladding; a lower waveguide layer, a quantum well active layer and an upper waveguide layer are sequentially arranged at the upper part of the lower cladding; the electron blocking layer is of an annular structure and is distributed on the outer side of the upper surface of the upper waveguide layer. The electron blocking layer is sequentially covered with an upper cladding layer and an upper contact layer; a central region between the upper surface of the upper waveguide layer and the upper surface of the upper contact layer is filled with a nano composite current blocking layer and overflows out of the upper surface of the upper contact layer; rectangular array nano columns are arranged in the nano composite current blocking layer. Through the good heat dissipation performance of the diamond nanorod structure, the service life of the device is prolonged, the expansion of current to the central area is effectively relieved, and the threshold current of the device is reduced.

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