Mixed deposition device for gallium oxide and mixed deposition method using the same

Abstract

The present invention relates to a hybrid deposition device for gallium oxide. According to the disclosed embodiment of the present invention, the hybrid deposition device for gallium oxide includes: a gas supply component, which supplies source gas, reaction gas and purge gas; a liquid supply component, which supplies at least a part of the source gas; and a chamber unit, which is connected to the gas supply component and the liquid supply component and has a substrate arranged inside.

Description

Technical Field

[0001] The present invention relates to a hybrid deposition apparatus for gallium oxide and a hybrid deposition method using the same. More specifically, the present invention relates to a hybrid deposition apparatus for gallium oxide using at least two deposition methods and a hybrid deposition method using the same. Background Art

[0002] As electronic products used in real life are gradually upgraded, the performance and number of semiconductors required for the operation of the electronic products are increasing. In addition, with the development of the driving system of electric vehicles (EVs), high-voltage systems are required, and power semiconductors with high band gaps are needed.

[0003] Therefore, silicon (Si) is used as a wafer for producing conventional semiconductors, but silicon (Si) has a low band gap and a problem of limiting high voltage realization. In order to solve the above problems, various attempts have been made to manufacture semiconductor wafers using next-generation materials such as silicon carbide (SiC), gallium nitride (GaN) and gallium oxide (Ga2O3).

[0004] Generally, methods for depositing a thin film of a predetermined thickness on a semiconductor substrate or glass substrate include physical vapor deposition (PVD) using physical collision such as sputtering and chemical vapor deposition (CVD) using chemical reaction. Among chemical vapor deposition methods, metal-organic chemical vapor deposition (MOCVD) is a method of forming a thin film by causing an organic metal complex gas to flow on a substrate and cause a decomposition reaction on the substrate surface, and mist chemical vapor deposition (Mist-CVD) is a method of depositing a thin film by spraying an aqueous solution at normal pressure and reacting with the substrate. Recently, atomic layer deposition (ALD) that can form a fine pattern thin film for semiconductor elements is also considered to be one of the effective deposition methods.

[0005] However, each deposition method has its advantages and disadvantages, and when a single deposition method is used, the disadvantages of that deposition method apply. For example, the problem with the Mist-CVD method is that it is difficult to control the growth rate of the crystal (thin film) grown on the substrate, and it has low uniformity. The ALD method has excellent thin film properties, but has the disadvantage of slow crystal growth rate, and the MOCVD method has a problem of low thin film properties, although the crystal growth rate is fast.

[0006] Furthermore, in each deposition method for depositing a thin film, deposition conditions for stably depositing a source gas or a source liquid on a substrate are different, so there is a problem that existing deposition apparatuses cannot appropriately utilize a variety of deposition methods.

[0007] It is necessary to develop a deposition device and a deposition method using the same for solving the various problems of the deposition method described above. Summary of the invention

[0008] Technical issues In order to solve the above problems, the present invention provides a hybrid deposition apparatus for gallium oxide for manufacturing a wafer by forming a crystal layer using at least two deposition methods and a hybrid deposition method using the same.

[0009] Technical Solution According to the disclosed embodiment of the present invention, a hybrid deposition device for gallium oxide includes: a gas supply component that supplies source gas, reaction gas and purge gas; a liquid supply component that supplies at least a portion of the source gas; and a chamber unit that is connected to the gas supply component and the liquid supply component and has a substrate arranged inside.

[0010] In addition, the gas supply assembly may include: a source gas supply module to supply the source gas; a reaction gas supply module to supply the reaction gas; a purge gas supply module to supply the purge gas; and a main suction module to provide negative pressure.

[0011] In addition, the source gas supply module may include: a first source gas supply unit supplying a first source gas; and a second source gas supply unit supplying a second source gas different from the first source gas, wherein at least one of the first source gas and the second source gas contains trimethylgallium (TMG).

[0012] In addition, the reaction gas supply module may be disposed to be connected with the purge gas supply module, the reaction gas supply module generating ozone (O 3 ) by receiving oxygen (O 2 ) from the outside and supplying to the chamber unit.

[0013] In addition, the reaction gas supply module may adjust a ratio of gallium supplied from the source gas supply module and the liquid supply assembly to ozone supplied to the chamber unit.

[0014] Furthermore, the liquid supply assembly may include: a source liquid supply unit that supplies a source liquid; and an evaporation unit that atomizes the source liquid.

[0015] In addition, the gas supply component and the liquid supply component can be combined on the upper side of the chamber unit, and the source gas, reaction gas, purge gas supplied from the gas supply component or the source liquid supplied from the liquid supply component is vertically sprayed toward a surface of a substrate arranged inside the chamber unit.

[0016] In addition, the mixed deposition device for gallium oxide may include: an injection unit, including a plurality of nozzles formed inside the chamber unit and connected to the gas supply component and the liquid supply component to inject at least one of the source gas, the reaction gas, the purge gas and the source liquid onto a surface of the substrate.

[0017] In addition, the hybrid deposition apparatus for gallium oxide according to the disclosed embodiment of the present invention may further include: a substrate adjustment unit that supports the lower portion of the substrate and allows the substrate to rotate in one direction.

[0018] In addition, the hybrid deposition apparatus for gallium oxide according to the disclosed embodiment of the present invention may further include: a heating unit formed at the bottom of the substrate adjustment unit and adjusting the temperature of the substrate and the inside of the chamber unit.

[0019] In addition, the substrate adjustment unit may adjust the position of the substrate in the chamber unit by lifting and lowering the substrate.

[0020] In addition, the substrate adjustment unit can prepare the substrate to a first state so as to deposit a first layer on the substrate by a first deposition method, the substrate adjustment unit raises and moves the substrate to a first height, and the heating unit heats the substrate to a first temperature range, wherein the first deposition method includes an atomic layer deposition method, and the first layer is an amorphous buffer layer.

[0021] In addition, the substrate adjustment unit can prepare the substrate to a second state to deposit a second layer on the first layer by a second deposition method, the substrate adjustment unit lowers the substrate and moves the substrate to a second height, and the heating unit heats the substrate to a second temperature range, wherein the second deposition method includes an organic metal chemical vapor deposition method, the second layer is a single crystal layer, the second height is formed to be greater than the first height, and the second temperature range is formed to be higher than the first temperature range.

[0022] In addition, the gas supply assembly and the liquid supply assembly can be selectively operated to grow multiple layers on the substrate by at least two of atomic layer deposition (ALD), metal organic chemical vapor deposition (MOCVD), and mist chemical vapor deposition (Mist-CVD).

[0023] In addition, according to the disclosed embodiment of the present invention, a hybrid deposition method using a hybrid deposition device for gallium oxide includes: a substrate preparation step, arranging the substrate to be grown inside a chamber unit; a first layer deposition step, depositing a first layer on the substrate by means of any one of a gas supply component and a liquid supply component; and a second layer deposition step, depositing a second layer on the first layer by means of any one of the gas supply component and the liquid supply component, wherein the first layer and the second layer are deposited by different deposition methods.

[0024] In addition, the first layer deposition step can be performed by atomic layer deposition (ALD) as a first deposition method, and the second layer deposition step can be performed by any one of organic metal chemical vapor deposition (MOCVD) and mist chemical vapor deposition (Mist-CVD) as a second deposition method.

[0025] In addition, according to the disclosed embodiment of the present invention, the hybrid deposition method using the hybrid deposition device for gallium oxide may also include: a first layer deposition preparation step, before the first layer deposition step, the substrate is prepared to a first state as the optimal condition for the first deposition method by means of a substrate adjustment unit; and a second layer deposition preparation step, before the second layer deposition step, the substrate is prepared to a second state as the optimal condition for the second deposition method by means of the substrate adjustment unit.

[0026] In addition, the first state may include at least one of a first height and a first temperature range, and the second state may include at least one of a second height and a second temperature range, wherein the second height is formed to be greater than the first height and the second temperature range is formed to be higher than the first temperature range.

[0027] In addition, the hybrid deposition method using the hybrid deposition device for gallium oxide may further include: a third layer deposition step, depositing a third layer on the second layer by means of the liquid supply component, wherein the third layer deposition step is performed by atomized chemical vapor deposition.

[0028] Beneficial Effects According to the disclosed embodiments of the present invention, since gallium oxide thin film crystals can be grown and deposited on the substrate 900 , it has the advantage of being able to manufacture integrated high-voltage and high-power semiconductors with a high bandgap compared to existing silicon semiconductors.

[0029] Furthermore, when manufacturing a semiconductor using gallium oxide as a material, by using a hybrid deposition apparatus and a hybrid deposition method for gallium oxide to which a variety of deposition methods can be applied, there is an advantage that a semiconductor meeting required specifications can be manufactured.

[0030] Furthermore, by using a hybrid deposition apparatus and a hybrid deposition method for gallium oxide to which a plurality of deposition methods can be applied, there is an advantage that the disadvantages of each deposition method can be compensated.

[0031] Furthermore, in order to be able to apply a variety of deposition methods, by changing the state of the substrate in a mixed deposition device and a mixed deposition method for gallium oxide, it is possible to use a variety of deposition methods in one device, and to stably deposit and grow the layer on the substrate under the optimal conditions of each deposition method. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 is a schematic perspective view of a hybrid deposition apparatus for gallium oxide according to an embodiment of the disclosure of the present invention.

[0033] Figure 2 is a conceptual diagram of a hybrid deposition apparatus for gallium oxide according to an embodiment of the disclosure of the present invention.

[0034] Figure 3 It is a schematic diagram for explaining a spray unit as one configuration of a hybrid deposition apparatus for gallium oxide according to an embodiment of the disclosure of the present invention.

[0035] Figure 4 Detailed Description of the Invention Various examples of gallium oxide thin films grown using a hybrid deposition apparatus for gallium oxide according to an embodiment of the present disclosure.

[0036] Figure 5 is a schematic flow chart of a hybrid deposition method using a hybrid deposition apparatus for gallium oxide according to an embodiment of the present invention.

[0037] Figure 6 FIG. 4 is a conceptual diagram of a hybrid deposition apparatus for gallium oxide according to another embodiment of the present invention.

[0038] Figure 7 FIG. 1 is a diagram for explaining a process of preparing a substrate in a first state for depositing a first layer by a first deposition method in a hybrid deposition apparatus for gallium oxide according to another embodiment of the present invention.

[0039] Figure 8 FIG. 1 is a diagram for explaining a process of preparing a substrate in a second state for depositing a second layer by a second deposition method in a hybrid deposition apparatus for gallium oxide according to another embodiment of the present invention.

[0040] Fig. 9 is a schematic flow chart of a hybrid deposition method using a hybrid deposition apparatus for gallium oxide according to another embodiment of the present invention.

[0041] Description of Reference Numerals 1: Hybrid deposition apparatus for gallium oxide 100: Gas supply assembly 110: source gas supply module 120: reaction gas supply module 130: Purge gas supply module 140: Main suction module 200: Liquid supply assembly 210: Source liquid supply unit 220: Evaporation unit 300: Chamber unit 400: Spray unit 500: Base 600, 600': substrate adjustment unit 700: heating unit S110: Substrate preparation step S120: First layer deposition step S130: Second layer deposition step S140: Third layer deposition step S210: Substrate preparation step S220: First layer deposition preparation step S230: First layer deposition step S240: Cleaning step S250: Second layer deposition preparation step S260: Second layer deposition step DETAILED DESCRIPTION

[0042] The advantages and features of the present invention and the methods for achieving the advantages and features of the present invention and the methods for achieving the advantages and features of the present invention will be clearly understood by referring to the embodiments described in detail below in conjunction with the accompanying drawings. However, the present invention can be implemented in various forms that are different from each other and is not limited to the embodiments disclosed below. The embodiments are provided only to complete the disclosure of the present invention and to fully inform the scope of the invention to a person with ordinary knowledge in the technical field to which the present invention belongs. The present invention is defined only by the scope of the claims.

[0043] Although "first", "second", etc. are used to describe various components, these components are obviously not limited to these terms. These terms are only used to distinguish one component from another component. Therefore, the first component mentioned below can obviously also be the second component within the technical concept of the present invention.

[0044] Throughout the specification, the same reference numerals refer to the same constituent elements.

[0045] The various features of the multiple embodiments of the present invention can be combined or combined with each other partially or as a whole. As those skilled in the art can fully understand, various linkages and drives can be performed technically, and the various embodiments can be implemented independently of each other or together through related relationships.

[0046] In addition, potential effects that can be expected through the technical features of the present invention that are not specifically mentioned in the description of the present invention can be processed according to the effects recorded in the present description. This embodiment is provided to more completely explain the present invention to persons with ordinary knowledge in the technical field to which the present invention belongs. The contents shown in the drawings may be exaggerated compared with the actual implementation form of the invention, and detailed descriptions of the structures that are judged to be likely to unnecessarily confuse the gist of the present invention will be omitted or briefly recorded.

[0047] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0048] Figure 1 is a schematic perspective view of a hybrid deposition device 1 for gallium oxide according to an embodiment disclosed in the present invention, Figure 2 1 is a conceptual diagram of a hybrid deposition apparatus 1 for gallium oxide according to an embodiment of the present disclosure.

[0049] Reference Figure 1 According to the disclosed embodiment of the present invention, the hybrid deposition apparatus 1 for gallium oxide includes a gas supply assembly 100, a liquid supply assembly 200, and a chamber unit 300. The gas supply assembly 100 can supply a plurality of gases to the chamber unit 300. For example, the gas supply assembly 100 can supply a source gas for growing a crystal on a substrate 900. In addition, the gas supply assembly 100 can supply a reaction gas for reacting with the source gas supplied for growing a crystal on the substrate 900. In addition, the gas supply assembly 100 can supply a purge gas for preventing accidental diffusion of the source gas inside the chamber unit 300.

[0050] The gas supply assembly 100 is described in more detail below. The gas supply assembly 100 may include a source gas supply module 110 for supplying source gas, a reaction gas supply module 120 for supplying reaction gas, and a purge gas supply module 130 for supplying purge gas. The source gas supply module 110 may supply source gases S1, S2, S3, and S4 stored in the source gas supply unit 111 to the chamber unit 300 through a source gas supply line 112.

[0051] The source gas supply module 110 may supply at least one source gas S1, S2, S3, S4 to the chamber unit 300. That is, the source gas supply module 110 may include at least one source gas supply unit 111, and the source gas supply module 110 may include a first source gas supply unit 1111 that supplies the first source gas S1 and a second source gas supply unit 1112 that supplies the second source gas S2. The second source gas S2 may be a substance different from the first source gas S1. Exemplarily, at least one of the first source gas S1 and the second source gas S2 may include trimethyl gallium (TMG). By making at least one of the plurality of source gases S1, S2, S3, S4 include a substance having gallium (Ga), gallium oxide (Ga2O3) crystals may be deposited on the substrate 900.

[0052] For example, the source gas supply module 110 may include a first source gas supply unit 1111, a second source gas supply unit 1112, a third source gas supply unit 1113, and a fourth source gas supply unit 1114. At this time, the first source gas S1 supplied to the chamber unit 300 by the first source gas supply unit 1111 may be trimethylgallium (TMG), and the second source gas S2 supplied to the chamber unit 300 by the second source gas supply unit 1112 may be trimethylaluminum (TMA). In the case where the second source gas S2 is trimethylaluminum (TMA), a lattice mismatch state may be solved by depositing a multi-layer aluminum gallium oxide (AlGaOx) layer having different layers.

[0053] In addition, the third source gas S3 supplied to the chamber unit 300 by the third source gas supply unit 1113 may be dodecyltrimethylammoniumtin (DTMASn) or bis(tert-butylamino)silane (BTBAS), and the fourth source gas S4 supplied to the chamber unit 300 by the fourth source gas supply unit 1114 may be an additional substance required for manufacturing semiconductor wafers. As described above, by providing the source gas supply unit 111 with a plurality of source gases S1, S2, S3, and S4, the process of growing thin film crystals on the substrate 900 can be optimized.

[0054] The reaction gas supply module 120 may supply the reaction gas R to the chamber unit 300. Exemplarily, the reaction gas R may be ozone (O3), and the reaction gas supply unit 121 in the reaction gas supply module 120 may receive oxygen (O2) from the outside to generate ozone (O3) and supply it to the chamber unit 300. The ozone (O3) supplied by the reaction gas supply module 120 may react with gallium (Ga) supplied by the source gas supply module 110 and / or the liquid supply assembly 200, and gallium oxide (Ga2O3) generated by the chemical reaction of gallium (Ga) and ozone (O3) may be deposited on the substrate 900.

[0055] In addition, the supply ratio of gallium (Ga) and ozone (O3) should be adjusted in order to produce a desired amount of gallium oxide (Ga2O3). Therefore, the reaction gas supply module 120 can adjust the ratio of gallium supplied from the source gas supply module 110 to the ozone supplied to the chamber unit 300. The ratio of gallium to ozone can be determined by the degree of opening and closing of a reaction gas supply regulating valve (not shown) formed between the reaction gas supply unit 121 and the reaction gas supply pipeline 122. As described above, by adjusting the ratio of the supplied gallium (Ga) to the supplied ozone (O3), there is an advantage that gallium oxide (Ga2O3) can be completely reacted while minimizing the residual gallium (Ga) or ozone (O3).

[0056] The purge gas supply module 130 may supply a purge gas P to the chamber unit 300. The purge gas P may be an inert gas such as nitrogen (N2) and / or argon (Ar). The purge gas supply module 130 may include a purge gas supply unit 131 storing and / or supplying the purge gas P, and a purge gas supply line 132 transmitting the purge gas P to the chamber unit 300 side. At this time, the purge gas supply line 132 may be connected to at least one of the source gas supply line 112, the reaction gas supply line 122, and the source liquid supply line 211 of the liquid supply assembly 200 described later, and may discharge the source gas S1, S2, S3, S4, the atomized source liquid L1, and the reaction gas R remaining in the source gas supply line 112, the reaction gas supply line 122, the source liquid supply line 211, and the chamber unit 300 to the outside of the chamber unit 300.

[0057] Exemplarily, the first purge gas supply line 1321 of the purge gas supply line 132 may be connected to the reaction gas supply line 122. In more detail, the reaction gas supply line 122 of the reaction gas supply module 120 may be arranged to be connected to the first purge gas supply line 1321 of the purge gas supply line 132. According to the structure as described above, the reaction gas R is not mixed with the source gases S1, S2, S3, and S4 before being sprayed from the spray unit 400 described later to the inside of the chamber unit 300, and thus has the advantage of being able to perform a stable chemical reaction between the source gases S1, S2, S3, and S4 and the reaction gas R and deposit on the substrate 900.

[0058] As another example, the second purge gas supply line 1322 in the purge gas supply line 132 may be connected to the source gas supply line 112. More specifically, the second purge gas supply line 1322 may be connected to at least one of the first source gas supply line 1121, the second source gas supply line 1122, the third source gas supply line 1123, and the fourth source gas supply line 1124. As described above, by connecting the source gas supply line 112 to the second purge gas supply line 1322, the purge gas P may discharge the source gases S1, S2, S3, and S4 remaining in the source gas supply line 112 and the chamber unit 300 to the outside of the chamber unit 300, and stable deposition and thin film crystal growth may be performed.

[0059] As another example, the second purge gas supply line 1322 in the purge gas supply line 132 may be connected to the source liquid supply line 211. At this time, the second purge gas supply line 1322 may also be connected to the source liquid supply line 211 disposed between the source liquid supply unit 210 and the front end of the evaporation unit 220 described later, and may also be connected to the atomized source liquid supply line 211 disposed between the rear end of the evaporation unit 220 and the chamber unit 300. As described above, by connecting the source liquid supply line 211 to the second purge gas supply line 1322, there is an advantage that the purge gas P can discharge the source liquid L1 remaining in the source liquid supply line 211 and the inside of the chamber unit 300 and / or the atomized source liquid L1 to the outside of the chamber unit 300, and stable deposition and thin film crystal growth can be performed.

[0060] Hereinafter, the liquid supply assembly 200 will be described in detail.

[0061] The hybrid deposition apparatus 1 for gallium oxide according to the disclosed embodiment of the present invention may include a liquid supply assembly 200, and the liquid supply assembly 200 may supply at least a portion of the source gases S1, S2, S3, and S4. At this time, the liquid supply assembly 200 may generate the source gases S1, S2, S3, and S4 in a mist state by vaporizing the source liquid L1, and supply the vaporized source gases to the chamber unit 300.

[0062] The liquid supply assembly 200 may include a source liquid supply unit 210 for supplying a source liquid L1, and an evaporation unit 220 for atomizing the source liquid L1. The source liquid supply unit 210 may store and / or supply a source liquid L1 that shares a predetermined substance with at least one of the source gases S1, S2, S3, and S4. Exemplarily, the source liquid L1 may be gallium acetylacetonate (Ga(acac)3) including gallium (Ga), and the source liquid L1 may be atomized by the evaporation unit 220 and gallium (Ga) may be supplied to the inside of the chamber unit 300. The evaporation unit 220 may be a predetermined device capable of generating ultrasonic vibrations, and may receive the source liquid L1 from the source liquid supply unit 210 and atomize the source liquid L1 into a mist state. The atomized source liquid L1 may be supplied to the inside of the chamber unit 300 through a source liquid supply line 211 connected to the chamber unit 300 at the rear end of the evaporation unit 220.

[0063] In addition, the source liquid L1 atomized into a mist state may form gallium oxide (Ga2O3) crystals on the substrate 900 by reacting with the reaction gas R. At this time, in order to minimize the residual amount of the source liquid L1 and the reaction gas R, each of the reaction gas supply module 120 and / or the liquid supply assembly 200 may adjust the ratio of gallium (Ga) supplied by the liquid supply assembly 200 to ozone (O3) supplied by the reaction gas supply module 120 by adjusting the supply amount of the reaction gas R and the atomized source liquid L1.

[0064] Hereinafter, the chamber unit 300 and the hybrid deposition device 1 disposed inside the chamber unit 300 , and the main suction module 140 for exhausting source gases S1 , S2 , S3 , S4 , reaction gas R, purge gas P, and source liquid S1 are described.

[0065] Figure 3 1 is a schematic diagram for explaining a spray unit 400 as one configuration of a hybrid deposition apparatus 1 for gallium oxide according to an embodiment of the present disclosure.

[0066] Reference Figure 2 and Figure 3According to the disclosed embodiment of the present invention, the hybrid deposition device 1 for gallium oxide may include a chamber unit 300. A substrate 900 may be arranged inside the chamber unit 300. A thin film crystal is grown by depositing at least one layer on the substrate 900, and the thin film crystal may be used to manufacture a power semiconductor element, etc.

[0067] The hybrid deposition device 1 according to the disclosed embodiment of the present invention can be driven under atmospheric pressure with the chamber region 300 filled with an inert gas to stably grow crystals on the substrate 900. However, the structure in which the operating pressure of the chamber region 300 of the hybrid deposition device 1 is atmospheric pressure is only an exemplary structure, and the structure in which the chamber region 180 is in a vacuum state or a low pressure state may also be included in the concept of the present invention.

[0068] The chamber unit 300 may be connected to the gas supply assembly 100 and the liquid supply assembly 200. More specifically, the chamber unit 300 may receive source gases S1, S2, S3, S4, reaction gas R, and purge gas P simultaneously or sequentially by being connected to the gas supply assembly 100, and may receive atomized source liquid L1 by being connected to the liquid supply assembly 200. Products (e.g., Ga2O3 or AlGaOx for solving lattice mismatch) generated by chemical reactions of the source gases S1, S2, S3, S4 or the atomized source liquid L1 with the reaction gas R may be deposited on a substrate 900 disposed inside the chamber unit 300 with a predetermined thickness.

[0069] At this time, the gas supply assembly 100 and the liquid supply assembly 200 may be combined with the upper side of the chamber unit 300. More specifically, the source gas supply line 112 in the gas supply assembly 100, the purge gas supply line 132 connected to the reaction gas supply line 122, and the source liquid supply line 211 may be connected to the upper side of the chamber unit 300. Thus, the source gas S1, S2, S3, S4, the reaction gas R, the purge gas P supplied from the gas supply assembly 100 or the source liquid L1 supplied from the liquid supply assembly 200 may be vertically sprayed toward a surface (e.g., the upper surface) of the substrate 900 disposed inside the chamber unit 300.

[0070] In the case of performing deposition using the conventional mist chemical vapor deposition method (Mist-CVD), a thin film is deposited by flowing the spray from one side to the other side of the upper surface of the substrate 900. However, when using the method as described above, there is a problem that the spray flowing on the upper surface of the substrate 900 cannot be deposited at a uniform height, and this may cause defects in the manufactured wafers and the semiconductors produced thereby. In order to solve the above-mentioned problems, the hybrid deposition device 1 for gallium oxide according to the disclosed embodiment of the present invention vertically sprays the gas and / or liquid required for forming thin film crystals onto the upper surface of the substrate 900, thereby having the advantage of being able to achieve uniform thin film crystal growth.

[0071] In addition, in order to uniformly spray the gas and / or liquid onto the substrate 900, the hybrid deposition apparatus 1 for gallium oxide according to the disclosed embodiment of the present invention may further include a spray unit 400 formed inside the chamber unit 300. The spray unit 400 may include a plurality of fine nozzles 410. The spray unit 400 is connected to the supply lines (e.g., source gas supply lines and / or source liquid supply lines) of the gas supply assembly 100 and the liquid supply assembly 200, thereby spraying at least one of the source gas S1, S2, S3, S4, the reaction gas R, the purge gas P, and the (atomized) source liquid L1 into the chamber unit 300, and the plurality of nozzles 410 may be arranged to cover the upper surface area of ​​the substrate 900. As another embodiment, the plurality of nozzles 410 may be arranged to cover the entire cross-sectional surface area of ​​the chamber unit 300, and may also be controlled to operate in an area corresponding to the area of ​​the substrate 900 arranged inside the chamber unit 300.

[0072] According to circumstances, when the substrate 900 moves in parallel in the chamber unit 300, each of the plurality of nozzles 410 included in the injection unit 400 may be selectively operated. Although not shown in detail in the drawings of the present invention, the substrate 900 may move horizontally inside the chamber unit 300. When the substrate 900 moves horizontally in the chamber unit 300, the nozzle 410 may perform injection of gas and / or liquid according to the position of the substrate 900. Thus, there is an advantage that time-division deposition and / or space-division deposition may be performed, and uniform and stable thin film crystal deposition may be performed.

[0073] The hybrid deposition device 1 for gallium oxide according to the disclosed embodiment of the present invention may include a substrate adjustment unit 600. The substrate adjustment unit 600 may support the lower portion of the substrate 900 and rotate the substrate 900 in one direction. Exemplarily, the substrate adjustment unit 600 may rotate the susceptor 500 disposed below the substrate 900, and the substrate 900 mounted on the susceptor 500 may rotate together with the susceptor 500. Since the substrate 900 may be rotated by the substrate adjustment unit 600, it has the advantage of being able to perform more uniform thin film deposition.

[0074] In addition, the hybrid deposition device 1 for gallium oxide according to the disclosed embodiment of the present invention may further include a heating unit 700. Exemplarily, the heating unit 700 may adjust the temperature inside the substrate 900 and the chamber unit 300, and may be formed below the substrate adjustment unit 600. As another example, the heating unit 700 may be formed below the susceptor 500, and heat or cool the susceptor 500 and the substrate 900 in such a manner that the susceptor 500 and the substrate 900 reach a target temperature. For example, the heating unit 700 may be heated to a maximum of 1000°C to 1200°C to transfer heat energy to the substrate 900 and the chamber unit 300. By means of the heating unit 700, there is an advantage of being able to easily deposit a layer (epitaxial layer) in a high temperature environment.

[0075] In addition, the hybrid deposition device 1 for gallium oxide according to the disclosed embodiment of the present invention may include a main suction module 140. The main suction module 140 can discharge the source gases S1, S2, S3, S4, the reaction gas R, the purge gas P and the (atomized) source liquid L1 remaining inside the chamber unit 300 to the outside by providing negative pressure. Exemplarily, the main suction module 140 includes a main pump 141, which can provide negative pressure to generate a pressure difference that forms a fluid flow from the chamber unit 300 side toward the exhaust line 142 side. As a result, the gas and / or liquid remaining inside the chamber unit 300 can be easily discharged through the exhaust line 142, and there is an advantage of being able to perform stable and precise thin film crystal deposition.

[0076] Hereinafter, a gallium oxide thin film deposited by using the hybrid deposition apparatus 1 for gallium oxide according to the disclosed embodiment of the present invention will be described.

[0077] Figure 4 Detailed Description of the Invention Various examples of gallium oxide thin films grown using the hybrid deposition apparatus 1 for gallium oxide according to the disclosed embodiment of the present invention.

[0078] Reference Figure 2 and Figure 4According to the disclosed embodiment of the present invention, the hybrid deposition apparatus 1 for gallium oxide can use at least two deposition methods and grow a plurality of layers of thin film crystals on the substrate 900. Exemplarily, the gas supply assembly 100 and the liquid supply assembly 200 of the hybrid deposition apparatus 1 for gallium oxide can be selectively operated to grow a plurality of layers on the substrate 900 by at least two of atomic layer deposition (ALD), metal organic chemical vapor deposition (MOCVD) and mist chemical vapor deposition (Mist-CVD).

[0079] First, a substrate 900 is arranged inside the chamber unit 300. Exemplarily, the substrate 900 may be an n-type β-gallium oxide (β-Ga2O3) substrate, a silicon substrate, or a silicon carbide substrate. As another example, the substrate 900 may be a sapphire substrate of aluminum oxide (Al2O3). In the case of using a sapphire substrate of aluminum oxide (Al2O3), a lattice mismatch between thin film crystal layers may occur, but by forming a superlattice using the above-mentioned trimethylaluminum (TMA), the mismatch problem can be solved.

[0080] Then, a first layer 910 may be deposited on the substrate 900. Exemplarily, the first layer 910 may be a β-gallium oxide (β-Ga2O3) layer, and the first layer 910 may be formed by atomic layer deposition (ALD). When the first layer 910 is deposited by atomic layer deposition (ALD), the first layer 910A of the atomic layer deposition may be formed to a thickness of about 10 nm to 30 nm in a temperature range of 100° C. to 350° C. When the first layer 910 is deposited by atomic layer deposition (ALD), the source gas supply module 110, the reaction gas supply module 120, and the purge gas supply module 130 in the gas supply assembly 100 may be operated simultaneously or sequentially, and one atomic layer may be stacked in each cycle. Thus, a thin and precise thin film layer may be formed.

[0081] As another example, the first layer 910 may be a β-gallium oxide (β-Ga2O3) layer, and the first layer 910 may be deposited using a mist chemical vapor deposition method (Mist-CVD). In the case of depositing the first layer 910 using a mist chemical vapor deposition method (Mist-CVD), the mist chemical vapor deposited first layer 910C may be formed to a thickness of about 5 μm to 12 μm in a temperature range of 600° C. to 1000° C. In the case of depositing the first layer 910 using a mist chemical vapor deposition method (Mist-CVD), the atomized source liquid L1 may be supplied to the inside of the chamber unit 300 by the evaporation unit 220 of the liquid supply assembly 200, and a thin film layer may be formed. As needed, the reaction gas supply module 120 in the gas supply assembly 100 may also be operated together to adjust the Ga / O ratio for generating gallium oxide (Ga2O3).

[0082] Then, the second layer 920 may be deposited on the first layer 910. Exemplarily, the second layer 920 may be a β-gallium oxide (β-Ga2O3) layer, and the second layer 920 may be deposited using a method different from that used when depositing the first layer 910. Exemplarily, in the case where the first layer 910 is deposited on the substrate 900 using an atomic layer deposition method (ALD), the second layer 920 may be deposited by any one of an organic metal chemical vapor deposition method (MOCVD) and a mist chemical vapor deposition method (Mist-CVD). In the case where the second layer 920 is deposited using an organic metal chemical vapor deposition method (MOCVD), the organic metal chemical vapor deposited second layer 920B may be formed to a thickness of about 1 μm to 3 μm at a temperature range of 400° C. to 1,000° C. As another example, in the case where the second layer 920 is deposited using a metal organic chemical vapor deposition method (MOCVD), the metal organic chemical vapor deposited second layer 920B can be formed to a thickness of about 5 μm to 12 μm in a temperature range of 400° C. to 1000° C. In the case where the second layer 920 is deposited using a metal organic chemical vapor deposition method (MOCVD), the source gases S1, S2, S3, and S4 supplied by the source gas supply module 110 of the gas supply assembly 100 and the reaction gas R supplied by the reaction gas supply module 120 can be mixed and supplied to the inside of the chamber unit 300, and a thin film layer can be formed.

[0083] As another example, when the second layer 920 is deposited using Mist-CVD, the second layer 920C may be formed to a thickness of about 5 μm to 12 μm at a temperature range of 600° C. to 1000° C.

[0084] As another example, when the first layer 910 is deposited using atomized chemical vapor deposition, the second layer 920 may be deposited using atomic layer deposition. The atomic layer deposited second layer 920A may be formed at a temperature range of 100° C. to 350° C. to a thickness of approximately 10 nm to 30 nm.

[0085] Then, a third layer 930 may be further deposited on the second layer 920. Exemplarily, the third layer 930 may be a β-gallium oxide (β-Ga2O3) layer, and the third layer 930 may be deposited using a method different from that used when depositing the first layer 910 and the second layer 920. Exemplarily, in the case where the first layer 910 is deposited on the substrate 900 using an atomic layer deposition method (ALD) and the second layer 920 is deposited on the first layer 910 using an organic metal chemical vapor deposition method (MOCVD), the third layer 930 may be deposited using a mist chemical vapor deposition method (Mist-CVD). In the case where the third layer 930 is deposited using a mist chemical vapor deposition method (Mist-CVD), the mist chemical vapor deposited third layer 930C may be formed to a thickness of about 3 μm to 10 μm at a temperature range of 600° C. to 1000° C.

[0086] As described above, among various forms of depositing a gallium oxide thin film, if the layer using the atomic layer deposition method is represented as A, the layer using the organic metal chemical vapor deposition method is represented as B, and the layer using the atomized chemical vapor deposition method is represented as C, then the embodiment ( Figure 4 (a)), so that the A layer-C layer is deposited on the substrate 900 ( Figure 4 (b)), so that the A layer-B layer is deposited on the substrate 900 ( Figure 4 (c)) and an embodiment in which a C layer-A layer is deposited on a substrate 900 ( Figure 4 (d)) is feasible. However, Figure 4 The embodiments shown in the drawings are exemplary, and deposition of more layers and thin film deposition structures having a deposition sequence different from that disclosed may also be performed as desired.

[0087] As described above, by using the hybrid deposition apparatus 1 for gallium oxide according to the disclosed embodiment of the present invention which can grow and deposit gallium oxide thin film crystals on the substrate 900 , it is possible to manufacture an integrated high-voltage and high-power semiconductor having a high bandgap compared to existing silicon semiconductors.

[0088] Furthermore, when manufacturing a semiconductor using gallium oxide as a material, there is an advantage that a semiconductor meeting required specifications can be manufactured by using the hybrid deposition apparatus 1 for gallium oxide that can be applied to a variety of deposition methods.

[0089] Furthermore, by using the hybrid deposition apparatus 1 for gallium oxide to which a plurality of deposition methods can be applied, there is an advantage that the disadvantages of each deposition method can be compensated.

[0090] Hereinafter, a mixed deposition method according to an embodiment disclosed in the present invention using the mixed deposition apparatus for gallium oxide will be described. When describing the mixed deposition method using the mixed deposition apparatus for gallium oxide according to an embodiment disclosed in the present invention, the contents repeated with the mixed deposition apparatus for gallium oxide described above will be briefly described or omitted.

[0091] Figure 4 are various examples of gallium oxide thin films grown using a hybrid deposition apparatus for gallium oxide according to an embodiment of the disclosure of the present invention. Figure 5 is a schematic flow chart of a hybrid deposition method using a hybrid deposition apparatus for gallium oxide according to an embodiment of the present invention.

[0092] Reference Figures 1 to 5 The hybrid deposition method using the hybrid deposition apparatus for gallium oxide according to the disclosed embodiment of the present invention may include a substrate preparation step ( S110 ), a first layer deposition step ( S120 ), and a second layer deposition step ( S130 ).

[0093] In the hybrid deposition method using the hybrid deposition apparatus for gallium oxide according to the disclosed embodiment of the present invention, the substrate preparation step (S110) may refer to arranging a substrate for growing thin film crystal inside the chamber unit. The substrate may be at least one of an n-type β-gallium oxide (β-Ga2O3) substrate, a silicon substrate, a silicon carbide (SiC) substrate, and an aluminum oxide (Al2O3) sapphire substrate.

[0094] Then, a first layer deposition step (S120) may be performed. In the first layer deposition step (S120), a first layer may be deposited on the substrate by any one of a gas supply assembly and a liquid supply assembly. At this time, the first layer may be deposited by an atomic layer deposition (ALD) method, and in the case of the thin film deposition by the atomic layer deposition method, the gas supply assembly may be operated.

[0095] Then, a second layer deposition step (S130) may be performed. In the second layer deposition step (S130), the second layer may be deposited on the first layer by any one of a gas supply assembly and a liquid supply assembly. In addition, the first layer and the second layer may be deposited by different deposition methods. Exemplarily, the first layer deposition step (S120) may be performed by an atomic layer deposition method to deposit the first layer on the substrate, and the second layer deposition step (S130) may be performed by any one of an organic metal chemical vapor deposition method and an atomized chemical vapor deposition method to deposit the second layer on the substrate.

[0096] In addition, a third layer deposition step (S140) may be performed. In the third layer deposition step (S140), the third layer may be deposited on the second layer by means of a liquid supply assembly. In addition, the third layer may be deposited by a deposition method different from that of the first layer and the second layer. Exemplarily, the first layer deposition step (S120) may be performed by an atomic layer deposition method to deposit the first layer on the substrate, the second layer deposition step (S130) may be performed by an organic metal chemical vapor deposition method to deposit the second layer on the first layer, and the third layer deposition step (S140) may be performed by an atomized chemical vapor deposition method to deposit the third layer on the second layer.

[0097] In addition, in the process of describing the hybrid deposition apparatus for gallium oxide according to the disclosed embodiment of the present invention, the thickness, formation temperature, etc. of each layer are described together, and thus the detailed description of each layer is omitted.

[0098] As another example, in the case where the first layer deposition step (S120) is performed by atomized chemical vapor deposition to deposit the first layer on the substrate, the second layer deposition step (S130) can be performed by atomic layer deposition to deposit the second layer on the first layer. As described above, by applying an effective method for manufacturing high-performance semiconductors, thin film deposition and crystal growth can be performed on the substrate, and there is an advantage that a hybrid deposition method according to an embodiment of the disclosure of the present invention can be used to manufacture high-quality semiconductors using multiple deposition methods.

[0099] Furthermore, the hybrid deposition method according to the disclosed embodiment of the present invention is performed using the hybrid deposition apparatus for gallium oxide according to the disclosed embodiment of the present invention, and thus shares the advantages possessed by the hybrid deposition apparatus.

[0100] Hereinafter, a hybrid deposition apparatus for gallium oxide according to another embodiment of the present invention will be described. When describing the hybrid deposition apparatus for gallium oxide according to another embodiment of the present invention, the same configurations and structures as those of the hybrid deposition apparatus for gallium oxide according to one embodiment of the present invention will be briefly described or omitted.

[0101] Figure 6 FIG. 1 is a conceptual diagram of a hybrid deposition apparatus 1 for gallium oxide according to another embodiment of the present invention.

[0102] Reference Figure 6 A hybrid deposition apparatus 1 for gallium oxide according to another embodiment of the present invention includes a gas supply assembly 100 , a liquid supply assembly 200 , a chamber unit 300 , and a spray unit 400 that are the same as the hybrid deposition apparatus 1 for gallium oxide described above.

[0103] In addition, a hybrid deposition device 1 for gallium oxide according to another embodiment of the present invention provides a more specific structure for applying multiple deposition methods in one hybrid deposition device for gallium oxide. For example, the atomic layer deposition method (ALD) as any one of the deposition methods has a slow deposition speed, but has the advantage of relatively fine crystals of the layer formed by deposition. As another example, the organic metal chemical vapor deposition method (MOCVD) as another deposition method has the advantage of a fast deposition speed, although the crystals of the layer formed by deposition are relatively not fine.

[0104] However, when the layer is deposited by atomic layer deposition (ALD), the source gases S1, S2, S3, S4 and / or the source liquid L1 should be sprayed and deposited under relatively low pressure and low temperature conditions, and when the layer is deposited by metal organic chemical vapor deposition (MOCVD), the source gases S1, S2, S3, S4 and / or the source liquid L1 should be sprayed and deposited under relatively high pressure and high temperature conditions. In order to deposit the layer on the substrate 900 in a uniform and stable shape and structure, the optimal deposition conditions may differ depending on which deposition method is used.

[0105] Since one deposition method is applied in the conventional deposition apparatus, the conventional deposition apparatus operates in a form of constantly maintaining the conditions inside the chamber unit 300. In addition, even if only a plurality of deposition apparatuses to which different deposition methods are applied are used and the plurality of deposition methods are applied to one substrate, crystals of a deposited layer may be deformed or contaminated by the external environment when moving from one deposition apparatus to another.

[0106] In order to solve the above-mentioned problems, the hybrid deposition apparatus 1 for gallium oxide according to another (disclosed) embodiment of the present invention may further include a substrate adjustment unit 600' that supports the lower part of the substrate 900 and allows the substrate 900 to rotate in one direction. At this time, the substrate adjustment unit 600' of the hybrid deposition apparatus 1 for gallium oxide according to another embodiment of the present invention not only rotates the substrate 900, but also adjusts the position of the substrate 900 in the chamber unit 300 by lifting the substrate 900. For example, the substrate adjustment unit 600' can adjust the height h of the substrate 900 in the chamber unit 300 by rising or falling. Figure 6 As shown, the height h of the substrate 900 may represent a distance between the ends of the plurality of nozzles 410 as a component of the spray unit 400 and the upper surface of the substrate 900 .

[0107] Figure 7 1 is a diagram for explaining a process of preparing a substrate 900 to be in a first state in order to deposit a first layer by a first deposition method in a hybrid deposition apparatus 1 for gallium oxide according to another embodiment of the present invention. Figure 8 1 is a diagram for explaining a process of preparing a substrate 900 to be in a second state in order to deposit a second layer by a second deposition method in the hybrid deposition apparatus 1 for gallium oxide according to another embodiment of the present invention.

[0108] Reference Figure 7 , the substrate adjustment unit 600' can make the heating unit 700 and the susceptor 500 rise, thereby, the substrate 900 placed on the susceptor 500 will also rise and move to the first position or the first height h1. In addition, the heating unit 700 can be controlled by a control unit (not shown) to heat the substrate 900 to the first temperature range T1. As described above, if the substrate 900 is prepared in the first state, the first deposition method can be used and the nozzle 410 can be sprayed toward the upper surface of the substrate 900 at the first process pressure P1, and the first layer is deposited on the substrate 900.

[0109] In more detail, the first deposition method may be an atomic layer deposition method (ALD), and the first temperature range T1 included in the first state may be 100° C. to 350° C. In addition, the thickness of the first layer deposited using the first deposition method may be 10 nm to 30 nm, and the first process pressure P1 according to the first deposition method may be 0.5 torr to 20 torr. The first layer deposited using the first deposition method may form an amorphous buffer layer.

[0110] Reference Figure 8, after depositing the first layer on the substrate 900, the substrate adjustment unit 600' may cause the heating unit 700 and the susceptor 500 to descend. As a result, the substrate 900 placed on the susceptor 500 also descends and moves to a second position or a second height h2. In addition, the heating unit 700 may be controlled by a control unit (not shown) to heat the substrate 900 to a second temperature range T1. As described above, if the substrate 900 is prepared in a second state, the second deposition method may be used and the nozzle 410 may be caused to spray source gas S1, S2, S3, S4 or atomized source liquid L1 toward the upper surface of the substrate 900 (more specifically, the upper surface of the first layer) at a second process pressure P1, and the second layer may be deposited on the substrate 900 (more specifically, on the first layer).

[0111] At this time, the second deposition method can be a metal organic chemical vapor deposition method (MOCVD). By using the difference in the optimal conditions of the metal organic chemical vapor deposition method (MOCVD) and the atomic layer deposition method (ALD), the second height h2 can be formed to be greater than the first height h1, the second temperature range T2 can be formed to be higher than the first temperature range T1, and the second process pressure P2 can be set to be higher than the first process pressure P1. In addition, the thickness of the second layer can be formed to be greater than the thickness of the first layer.

[0112] More specifically, the second temperature range T1 included in the second state may be 400° C. to 1000° C. In addition, the thickness of the second layer deposited using the second deposition method may be 1 μm to 10 μm, and the second process pressure P2 according to the second deposition method may be 30 Torr to 500 Torr. The second layer deposited using the second deposition method may form a single crystal layer.

[0113] In addition, the first layer can function as an amorphous buffer layer to make it easier for the second layer of the single crystal to be stacked and formed on the substrate 900 , thereby having the advantage of enabling the second layer to be stably deposited and grown.

[0114] As needed, a process of cleaning the inside of the chamber unit 300 may be performed before and after the second layer is deposited. In particular, after the second layer is deposited, the source gas S1, S2, S3, S4 or the source liquid L1 is likely to remain inside the chamber unit 300 by high-pressure injection of the source gas S1, S2, S3, S4 or the source liquid L1, and a cleaning step of discharging the remaining source gas S1, S2, S3, S4 or the source liquid L1 to the outside may be performed. Thus, there is an advantage that the reliability of the power semiconductor completed by depositing the layer on the substrate 900 can be improved and the durability of the hybrid deposition apparatus 1 for gallium oxide can be improved.

[0115] As described above, the hybrid deposition apparatus 1 for gallium oxide according to another embodiment of the present invention includes a substrate adjustment unit 600' and a heating unit 700 capable of lifting and lowering the substrate 900, so that the state (temperature, height, etc.) inside the chamber unit 300 and the substrate 900 can be changed to correspond to the optimal conditions of the deposition method for depositing each layer. As a result, it is advantageous in that multiple deposition methods can be used in one apparatus to stably deposit multiple layers, increase the production speed of power semiconductors manufactured by depositing growth layers on substrates, and minimize the inflow of foreign matter during the deposition process, thereby improving the reliability of power semiconductors.

[0116] Hereinafter, a mixed deposition method using a mixed deposition apparatus 1 for gallium oxide according to another embodiment of the present invention will be described. When describing the mixed deposition method according to another embodiment of the present invention, the same configurations and structures as those of the mixed deposition method according to one embodiment of the present invention described above will be briefly described or omitted.

[0117] Fig. 9 FIG. 1 is a schematic flow chart of a mixed deposition method using a mixed deposition apparatus 1 for gallium oxide according to another embodiment of the present invention.

[0118] Reference Fig. 9 , similar to the above-mentioned mixed deposition method, the mixed deposition method using the mixed deposition device 1 for gallium oxide according to the disclosed embodiment of the present invention includes a substrate preparation step (S210), a first layer deposition step (S230) and a second layer deposition step (S260). The substrate preparation step (S210) in this embodiment is the same as the substrate preparation step (S110) in the above-mentioned embodiment, the first layer deposition step (S230) in this embodiment is the same as the first layer deposition step (S120) in the above-mentioned embodiment, and the second layer deposition step (S260) in this embodiment is the same as the second layer deposition step (S130) in the above-mentioned embodiment, so detailed description is omitted.

[0119] In addition, the hybrid deposition method according to another embodiment of the present invention may further include deposition preparation steps (S220) and (S250) before each deposition step (S230) and (S260). Exemplarily, the deposition preparation steps (S220) and (S250) may include a first layer deposition preparation step (S220) and a second layer deposition preparation step (S250).

[0120] The first layer deposition preparation step (S220) may be performed between the substrate preparation step (S210) and the first layer deposition step (S230). The first layer deposition preparation step (S220) may be a step of preparing the state of the substrate under the optimal conditions of the first deposition method for depositing the first layer on the substrate. Exemplarily, the first deposition method may be an atomic layer deposition method (ALD), and in the first layer deposition preparation step (S220), the substrate adjustment unit as a component of the hybrid deposition device for gallium oxide raises and lowers (in more detail, rises) the heating unit and the susceptor to adjust the substrate placed on the susceptor to a first height. At this time, the "height" may represent a vertical interval from the ends of the plurality of nozzles as a detailed structure of the injection unit to the upper surface of the substrate. In addition, in the first layer deposition preparation step (S220), the heating unit may be heated so that the substrate reaches a first temperature range. Thus, in the first layer deposition preparation step (S220), the substrate and the chamber unit may be prepared in the first state.

[0121] If the substrate is prepared to the first state by the first layer deposition preparation step (S220), in the first layer deposition step (S230), the injection unit injects the source gas or source liquid toward the substrate at the first process pressure, so that the amorphous first layer can be deposited with the first thickness. Exemplarily, the first layer can be a buffer layer, and the first layer can play a buffering role so that the second layer can be easily deposited and grown on the substrate. The first temperature range, the first process pressure and the first thickness for depositing the first layer have been described in the hybrid deposition device for gallium oxide, so the detailed description is omitted.

[0122] The second layer deposition preparation step (S250) may be performed between the first layer deposition step (S230) and the second layer deposition step (S260). The second layer deposition preparation step (S260) may be a step of preparing the state of the substrate under the optimal conditions of the second deposition method for depositing the second layer on the substrate (more specifically, on the first layer). Exemplarily, the second deposition method may be an organic metal chemical vapor deposition method (MOCVD), and in the second layer deposition preparation step (S250), a substrate adjustment unit as a component of the hybrid deposition device for gallium oxide raises and lowers (more specifically, lowers) the heating unit and the susceptor to adjust the substrate placed on the susceptor to a second height. In addition, in the second layer deposition preparation step (S250), the heating unit may be heated so that the substrate reaches a second temperature range. Thus, in the second layer deposition preparation step (S250), the substrate and the chamber unit may be prepared in the second state.

[0123] If the substrate is prepared to the second state by the second layer deposition preparation step (S250), in the second layer deposition step (S260), the injection unit injects the source gas or source liquid toward the substrate at the second process pressure, so that the second layer of the single crystal can be deposited with the second thickness. Exemplarily, the second layer can be a single crystal layer, and the second layer can be stacked on the first layer as a buffer layer. The second temperature range, the second process pressure and the second thickness for depositing the second layer have been described in the hybrid deposition device for gallium oxide, so the detailed description is omitted.

[0124] In addition, a cleaning step (S240) may be included between the first layer deposition step (S230) and the second layer deposition step (S260). The cleaning step (S240) may be a process for discharging the source gas S1, S2, S3, S4 or the source liquid L1 remaining in the chamber unit by the first layer deposition step (S230) to the outside. In the cleaning step (S240), the substrate adjustment unit as a component of the hybrid deposition device for gallium oxide may raise and lower (more specifically, raise) the heating unit and the susceptor to adjust the substrate placed on the susceptor to a third height. At this time, the third height may be equal to or less than the first height. That is, in the cleaning step (S240), the substrate may be raised to a position higher than the first layer deposition step (S230). In addition, the heating unit may be turned off in the cleaning step (S240). If the substrate is adjusted to the third height, the purge gas may be supplied by the injection unit, or the gas and / or liquid remaining inside the chamber unit 300 may be easily discharged to the exhaust line by the operation of the main suction module.

[0125] In addition, in the cleaning step (S240), since the substrate adjustment unit enters the interior of the chamber unit to the maximum extent except for the internal space of the chamber unit, the source gases S1, S2, S3, S4 and / or the source liquid L1 remaining on the surface of the substrate adjustment unit can be removed, and the hygiene of the entire hybrid deposition device for gallium oxide can be improved.

[0126] If necessary, after the second layer deposition step (S260), a third layer deposition step (not shown) may be further included for further depositing a third layer on the second layer using a third deposition method (e.g., Mist-CVD method). In addition, between the second layer deposition step (S260) and the third layer deposition step, a second cleaning step (not shown) for cleaning the interior of the chamber unit may be further performed, and in order to achieve the best conditions for using the third deposition method, a third adjustment step (not shown) for preparing the substrate to a third state (e.g., adjusting the substrate to a third height) may be performed.

[0127] The preferred embodiments of the present invention have been described above, but the present invention is not limited thereto and can be implemented in various modified forms within the scope of the claims, detailed description of the invention and the drawings, which obviously also belong to the scope of the present invention.

[0128] Industrial Applicability An object of the present invention is to provide a hybrid deposition apparatus for gallium oxide for manufacturing a wafer by forming a crystal layer using at least two deposition methods and a hybrid deposition method using the same.

Claims

1. A mixed deposition device for gallium oxide, characterized in that: include: A gas supply assembly, which supplies source gas, reaction gas and purge gas; a liquid supply assembly for supplying at least a portion of the source gas; as well as The chamber unit is connected to the gas supply assembly and the liquid supply assembly, and has a substrate arranged inside.

2. The hybrid deposition device for gallium oxide according to claim 1, characterized in that: The gas supply assembly comprises: a source gas supply module for supplying the source gas; A reaction gas supply module, for supplying the reaction gas; a purge gas supply module for supplying the purge gas; and Main suction module, provides negative pressure.

3. The mixed deposition device for gallium oxide according to claim 2, characterized in that: The source gas supply module comprises: a first source gas supply unit that supplies a first source gas; and a second source gas supply unit that supplies a second source gas different from the first source gas, Wherein, at least one of the first source gas and the second source gas contains trimethylgallium.

4. The mixed deposition device for gallium oxide according to claim 3, characterized in that: The reaction gas supply module is disposed to be connected to the purge gas supply module, and the reaction gas supply module generates ozone by receiving oxygen from the outside and supplies it to the chamber unit.

5. The mixed deposition device for gallium oxide according to claim 4, characterized in that: The reaction gas supply module adjusts a ratio of gallium supplied from the source gas supply module and the liquid supply assembly to ozone supplied to the chamber unit.

6. The mixed deposition device for gallium oxide according to claim 4, characterized in that: The liquid supply assembly comprises: a source liquid supply unit that supplies a source liquid; and An evaporation unit atomizes the source liquid.

7. The mixed deposition device for gallium oxide according to claim 1, characterized in that: The gas supply assembly and the liquid supply assembly are combined on the upper side of the chamber unit, and the source gas, reaction gas, purge gas supplied from the gas supply assembly or the source liquid supplied from the liquid supply assembly is vertically sprayed toward a surface of a substrate arranged inside the chamber unit.

8. The mixed deposition device for gallium oxide according to claim 7, characterized in that: Also includes: The injection unit includes a plurality of nozzles formed inside the chamber unit and connected to the gas supply assembly and the liquid supply assembly to inject at least one of the source gas, the reaction gas, the purge gas and the source liquid onto a surface of the substrate.

9. The mixed deposition device for gallium oxide according to claim 1, characterized in that: Also includes: The substrate adjustment unit supports the lower part of the substrate and enables the substrate to rotate in one direction.

10. The mixed deposition device for gallium oxide according to claim 9, characterized in that: Also includes: The heating unit is formed at the lower part of the substrate adjustment unit and adjusts the temperature of the substrate and the interior of the chamber unit.

11. The hybrid deposition device for gallium oxide according to claim 10, characterized in that: The substrate adjustment unit adjusts a position of the substrate in the chamber unit by lifting and lowering the substrate.

12. The hybrid deposition device for gallium oxide according to claim 11, characterized in that: The substrate adjustment unit prepares the substrate to a first state so as to deposit a first layer on the substrate by a first deposition method, the substrate adjustment unit raises and moves the substrate to a first height, and the heating unit heats the substrate to a first temperature range. Wherein, the first deposition method includes an atomic layer deposition method, and the first layer is an amorphous buffer layer.

13. The hybrid deposition device for gallium oxide according to claim 12, characterized in that: The substrate adjustment unit prepares the substrate to a second state so as to deposit a second layer on the first layer by a second deposition method, the substrate adjustment unit lowers the substrate and moves the substrate to a second height, and the heating unit heats the substrate to a second temperature range. Wherein, the second deposition method includes an organic metal chemical vapor deposition method, and the second layer is a single crystal layer. The second height is formed to be greater than the first height, and the second temperature range is formed to be higher than the first temperature range.

14. The hybrid deposition device for gallium oxide according to claim 1, characterized in that: The gas supply assembly and the liquid supply assembly are selectively operated to grow multiple layers on the substrate by at least two of atomic layer deposition, metal organic chemical vapor deposition, and atomized chemical vapor deposition.

15. A mixed deposition method using a mixed deposition device for gallium oxide, wherein the mixed deposition device for gallium oxide is the mixed deposition device for gallium oxide according to any one of claims 1 to 14, characterized in that: include: a substrate preparation step of arranging the substrate to be grown inside the chamber unit; A first layer deposition step, depositing a first layer on the substrate by any one of a gas supply assembly and a liquid supply assembly; and A second layer deposition step is performed by depositing a second layer on the first layer by using any one of the gas supply assembly and the liquid supply assembly. The first layer and the second layer are deposited by different deposition methods.

16. The mixed deposition method using a mixed deposition device for gallium oxide according to claim 15, characterized in that: The first layer deposition step is performed by atomic layer deposition as a first deposition method, The second layer deposition step is performed by any one of an organic metal chemical vapor deposition method and an atomized chemical vapor deposition method as a second deposition method.

17. The mixed deposition method using a mixed deposition device for gallium oxide according to claim 16, characterized in that: Also includes: a first layer deposition preparation step, before the first layer deposition step, preparing the substrate to a first state as an optimal condition for the first deposition method by a substrate adjustment unit; as well as A second layer deposition preparation step, before the second layer deposition step, prepares the substrate to a second state as an optimal condition for the second deposition method by the substrate adjustment unit.

18. The mixed deposition method using a mixed deposition device for gallium oxide according to claim 17, characterized in that: The first state includes at least one of a first altitude and a first temperature range, The second state includes at least one of a second altitude and a second temperature range, The second height is formed to be greater than the first height, and the second temperature range is formed to be higher than the first temperature range.

19. The mixed deposition method using a mixed deposition device for gallium oxide according to claim 15, characterized in that: Also includes: a third layer deposition step, depositing a third layer on the second layer by means of the liquid supply assembly, Wherein, the third layer deposition step is performed by atomized chemical vapor deposition.

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