Monocrystalline silicon cutting fluid easy to clean and use method thereof

Abstract

The invention discloses an easy-to-clean monocrystalline silicon cutting fluid and a use method thereof. The cutting fluid comprises the following components in percentage by mass: 15-30% of a wetting agent A, 5-10% of a wetting agent B, 2-5% of a lubricant, 4-10% of a dispersant, 1-2% of a chelating agent, 2-5% of a penetrant, 1-3% of a pH regulator, 5-20% of a solubilizer and the balance of deionized water. Wherein the molecular structure of the wetting agent B contains at least one of hydroxyl, acylamino or carboxyl. The cutting fluid and deionized water are mixed and diluted to be used for slicing a single crystal silicon rod. The cutting fluid provided by the invention can form a bidirectional hydrophilic-hydrophobic interface on a silicon wafer, and organic matter residues of organic components of the cutting fluid on the silicon surface are reduced. The problem that a large amount of organic components on the surface of the cut silicon wafer are difficult to desorb due to high component concentration of the cutting fluid and strong adsorption of the organic components on the surface of the silicon wafer in the existing cutting fluid technology is solved, the cleaning capability of the cutting fluid is improved, and water saving, consumption reduction and improvement of the quality of the silicon wafer are facilitated.

Description

Technical Field

[0001] The present invention relates to the field of photovoltaic technology, and in particular to an easy-to-clean single crystal silicon cutting fluid and a use method thereof. Background Art

[0002] Solar photovoltaic power generation has become one of the fastest growing renewable energy sources in recent years and the most promising permanent energy source due to its significant advantages such as zero carbon emissions, economic feasibility and sustainability. Monocrystalline silicon solar cells have largely replaced traditional polycrystalline silicon cells and become the mainstream of the market, and are highly favored by the market due to their high cell conversion efficiency and mature industrial technology.

[0003] The silicon wafers widely used in the photovoltaic industry are mainly obtained by cutting silicon rods. Silicon wafer cutting is the first step in silicon wafer processing and the most critical processing link. In the process of preparing silicon wafers, a large amount of cutting fluid is required to ensure that the silicon carbide particles mixed in the cutting process maintain good fluidity and dispersion, and act evenly and smoothly on the surface of the silicon material during the high-speed movement of the steel wire, while taking away heat and impurity particles in time to ensure the quality of the cut silicon wafers. After cutting, the surface of the silicon wafer will be left with residual cutting fluid, causing organic matter and metal ion pollutants to adhere to the surface of the silicon wafer in the form of chemical adsorption, which will seriously affect the subsequent preparation process of solar cells, such as the texturing process, and ultimately seriously affect the photoelectric conversion efficiency of the battery. Therefore, wet chemical cleaning technology must be used to remove it from the surface of the silicon wafer. Usually, detergents, hydrogen peroxide, and alkali are used as cleaning agents and residual cutting fluid is removed under ultrasound.

[0004] Among the alkali and hydrogen peroxide used in the cleaning process, hydrogen peroxide is used in the largest amount. Hydrogen peroxide has strong oxidizing properties, is extremely harmful to the environment, and has high water treatment costs. Hydrogen peroxide reacts with organic matter and metal impurities on the surface of silicon materials to release heat and produce bubbles. The reaction process is difficult to control, causing thermal and oxidative damage to the surface of the silicon wafer. On the other hand, the strong alkali also has a significant corrosive effect on silicon materials, resulting in grooves and white spots on the surface of the silicon wafer, and causing cracks and peeling on the surface of the silicon material. At present, most of the commercial crystalline silicon water-based cutting fluids used at home and abroad are composed of ordinary polyethers or acetylene alcohols and a certain amount of defoaming agents. The organic content of the cutting fluid is generally above 80%. Due to the strong adsorption characteristics and steric effect of organic components on the silicon surface, a large amount of cleaning agents are required in the post-cleaning process to remove them to eliminate the negative impact on subsequent processes.

[0005] Therefore, it is necessary to develop an easy-to-clean cutting fluid that has low residual organic components on the surface of silicon wafers after silicon rod cutting and can be quickly removed, which is of great significance for improving the efficiency and yield of photovoltaic cells and protecting the environment. Summary of the invention

[0006] The purpose of the present invention is to provide an easy-to-clean single crystal silicon cutting fluid and a method for using the same, so as to solve the problem that some organic residues remain on the surface of silicon wafers after the silicon blocks are cut and are difficult to clean and remove, and at the same time effectively reduce the amount of hydrogen peroxide used in the cleaning fluid, and significantly reduce the residual organic matter on the surface of silicon wafers after cutting and cleaning.

[0007] To achieve the above object, the present invention is implemented through the following technical solutions: In a first aspect, the present invention provides an easy-to-clean single crystal silicon cutting fluid, the cutting fluid comprising the following components in mass fractions: 15% to 30% wetting agent A, 5% to 10% wetting agent B, 2% to 5% lubricant, 4% to 10% dispersant, 1% to 2% chelating agent, 2% to 5% penetrant, 1% to 3% pH adjuster, 5% to 20% solubilizer, and the balance being deionized water.

[0008] Preferably, the wetting agent B contains at least one of a hydroxyl group, an amide group or a carboxyl group in its molecular structure.

[0009] Preferably, the wetting agent A is selected from one or more of low-foaming ethylene oxide propylene oxide block polyether, octanol-terminated ethylene oxide propylene oxide block polyether, and benzyl alcohol-terminated ethylene oxide propylene oxide block polyether.

[0010] Preferably, the molecular weight of the wetting agent A is 1000-4000.

[0011] Preferably, the wetting agent B is selected from one or more of hydroxyethyl starch, polyacrylamide-acrylic acid, polyacrylamide hydroxyethyl methacrylate, hyaluronic acid, and guar gum.

[0012] Preferably, the lubricant is selected from one or more of tetrapolyricinoleate, trimethylolpropane oleate, and polyethylene glycol dioleate.

[0013] Preferably, the dispersant is selected from one or more of propylene oxide block fatty acid methyl ester ethoxylate and propylene oxide block fatty acid methyl ester ethoxylate sulfonate.

[0014] Preferably, the solubilizer is selected from one or more of isohexylene glycol, propylene glycol, isopropanol, and polyethylene glycol 300.

[0015] Preferably, the chelating agent is selected from one or more of ethylenediaminetetraacetic acid, sodium alginate, nitrilotriacetic acid, diethylenetriamine pentacarboxylate, and sodium gluconate.

[0016] Preferably, the penetrant is selected from one or more of secondary alkyl sodium sulfate and primary alkyl sodium sulfonate.

[0017] Preferably, the pH adjuster is selected from one or more of citric acid, lactic acid, tartaric acid, malic acid and sodium citrate.

[0018] In a second aspect, the present invention provides a method for using an easy-to-clean single crystal silicon cutting fluid, wherein the cutting fluid as described above is stirred at room temperature until it becomes clear and transparent, and then diluted, wherein the mass ratio of the cutting fluid to water is 1 to 2:200 to 500; and the diluted cutting fluid is added when slicing the silicon rod.

[0019] Compared with the prior art, the beneficial effects of the present invention are as follows: the present invention provides an easy-to-clean single crystal silicon cutting fluid, which can ensure environmental protection and no irritating odor, and has the characteristics of low residual organic pollutants on the surface of the silicon wafer after cutting compared with the existing cutting fluid; at the same time, the surface of the silicon wafer is easier to clean after cutting, and the total organic carbon (TOC) content of the silicon wafer after cleaning is lower, which greatly reduces the influence of the difficult-to-desorb components in the existing cutting fluid on the subsequent process, thereby improving the photoelectric conversion efficiency of the silicon wafer.

[0020] Specifically, the solution of the present invention has the following advantages: (1) Wetting agent B, as a compound containing multiple hydroxyl groups, can have a wetting effect on the surface of silicon materials. During the cutting process, it can form a wetting film on the surface of the silicon wafer to prevent the adhesion of silicon powder, and further promote the rapid cleaning effect of areas with more organic residues. During the cleaning process after cutting, the active hydroxyl groups contained in the wetting agent tend to form hydrogen bonds with the Si-H on the surface of the silicon wafer, thereby adsorbing on the surface of the silicon wafer to form a barrier layer. Combined with its own steric hindrance, it blocks the etching of alkali, reduces the reaction activity of silicon atoms here, and protects the silicon wafer from being easily corroded and damaged by alkali liquid. At the same time, wetting agent B contains multiple branched hydroxyl groups, which makes it have a dispersing effect and many active sites. It can form multiple anchoring groups with the surface of silicon powder particles through hydrogen bonding, improve the dispersion efficiency, ensure that the silicon powder particles are stably suspended in the dispersion system, and avoid silicon powder flocculation and agglomeration.

[0021] (2) The molecular chain structure of fatty acid methyl ester ethoxylated dispersants contains terminal methyl and propylene oxide methyl groups, which have the characteristics of strong wetting power, low foam energy, and reduced surface tension of silicon wafers. It has weak adsorption power on the surface of silicon wafers, is easy to rinse, and reduces the residual pollutants on the surface of silicon wafers. Excellent dispersibility can promote the uniformity of dispersion of wetting agents and lubricants in the aqueous phase, reduce the distribution difference of each component of the cutting fluid in each area of ​​the silicon wafer and the cutting line, and improve the uniformity of silicon powder dispersion. Dispersants have excellent oil removal and emulsification properties, and are more likely to attract organic dirt and lipophilic lubricants in the cutting fluid to dissolve in water and separate from the silicon wafer. At the same time, dispersants can inhibit various dirt and heavy metal ions in the cutting fluid from re-depositing on the surface of the silicon wafer. More importantly, it can form hydrogen bonds with hydroxyl-containing wetting agents to attract and form a stable interface community. This hydrogen bond helps to enhance the solubility and desorption of wetting agents and lubricants. Compared with the high hydrophilicity of the wetting agent, the hydrophobic group of the dispersant can pull the wetting agent away from the silicon surface in a "hand-in-hand" manner during the cleaning step, enhancing the desorption of the wetting agent from the silicon surface, thereby reducing the amount of residue on the silicon wafer surface after cutting, significantly enhancing the cleanliness of the silicon wafer surface, and the ease of post-cleaning.

[0022] (3) Adding chelating agents to the cutting fluid helps to enhance the cutting fluid's ability to complex organic impurities and heavy metal ions, making it less likely for them to be adsorbed and remain on the surface of the silicon wafer. The excellent chelating power of the chelating agent can effectively chelate the metal ions in the solution during the cutting process, and easily dissolve the non-water-soluble metal soap salts deposited on the surface of the silicon wafer, reducing the contamination of metal ions and preventing heavy metal ions from diffusing into the interior of the silicon wafer and causing leakage.

[0023] (4) The penetrant improves the penetration of the cleaning system, strengthens the penetration of the cutting fluid into the junction between the hard surface and the dirt, and has a stripping effect on the dirt. It can help the cutting fluid penetrate into the junction between the organic matter on the silicon wafer surface and the silicon surface, reduce the adhesion of the organic matter on the silicon wafer surface, and roll off the organic matter.

[0024] In summary, the dispersant contained in the cutting fluid provided by the present invention can form a bidirectional hydrophilic-hydrophobic interface with the wetting agent, and on the basis of ensuring the effectiveness of the cutting fluid in assisting the cutting of the single crystal silicon rod, promote the separation of organic residues on the surface of the single crystal silicon from the surface of the silicon wafer, reduce the residual pollutants on the surface of the silicon wafer after the silicon block is cut, and enhance the cleaning performance of the silicon wafer. Compared with the existing cutting fluid, the cutting fluid provided by the present invention can reduce the residual organic matter on the silicon surface, solve the problem that the residual organic matter cannot be efficiently removed during the post-cleaning time due to the difficulty in desorption of the existing cutting fluid components, improve the cleaning ability of the cutting fluid, and help to improve the silicon wafer yield and photoelectric conversion efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 This is a microscope image of the silicon wafer after slicing in Example 1 of the present invention; Figure 2This is a microscope image of the silicon wafer after cleaning and air-drying in Example 1 of the present invention; Figure 3 This is a microscope image of the silicon wafer after slicing in Comparative Example 1 of the present invention; Figure 4 This is a microscope image of the silicon wafer after cleaning and air-drying in Comparative Example 1 of the present invention; Figure 5 This is a microscope image of silicon wafers currently available on the market. DETAILED DESCRIPTION

[0026] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention. Example 1

[0027] When slicing the silicon rod, an easy-to-clean single crystal silicon cutting liquid of the present invention is added, and the specific steps include: (1) Preparation of cutting fluid: 20% of low-foaming ethylene oxide propylene oxide block polyether, 8% of polyacrylamide hydroxyethyl methacrylate, 6% of propylene oxide block fatty acid methyl ester ethoxylate, 4% of tetrameric ricinoleate, 1% of nitrilotriacetic acid, 2% of sodium secondary alkyl sulfate, 1% of citric acid, 8% of isohexanediol, and 50% of deionized water were mixed in mass percentage, and stirred at room temperature for 10 min until the mixture became clear and transparent to obtain a cutting fluid; (2) Slicing: Pour 3 L of the cutting liquid from step (1) into a slicer containing 450 L of deionized water at room temperature, mix well, and then cut the silicon rod with a 24 tungsten wire. The silicon rod is 182 mm × 1820 mm and the length of the entire silicon rod is 800 mm. The cutting process takes 90 min to obtain a silicon wafer with a size of 1820 mm × 820 mm and a thickness of 120 μm. (3) Ultrasonic cleaning: Place the sliced ​​silicon wafer in deionized water for ultrasonic cleaning for 20 minutes; (4) Cleaning and air-drying: The silicon wafer after ultrasonic cleaning is placed in a silicon wafer cleaning machine containing 2% sodium hydroxide (30% by mass), 1% hydrogen peroxide and 2% detergent (produced by Changzhou Shichuang Energy Co., Ltd., model SW3) for ultrasonic cleaning for 1 min, then placed in deionized water for ultrasonic cleaning for 2 min, and finally air-dried. Example 2

[0028] The difference between Example 2 and Example 1 is that the content of dispersant propylene oxide block fatty acid methyl ester ethoxylate in the cutting fluid is reduced to 4%, and other steps remain the same. Example 3

[0029] The difference between Example 3 and Example 1 is that the amount of hydrogen peroxide used in step (4) during cleaning and air-drying is reduced to 0.5%, and the other steps remain the same. Example 4

[0030] When slicing the silicon rod, an easy-to-clean single crystal silicon cutting liquid of the present invention is added, and the specific steps include: (1) Preparation of cutting fluid: Mix 15% of octanol-terminated ethylene oxide propylene oxide block polyether, 6% of polyacrylamide hydroxyethyl methacrylate, 4% of propylene oxide block fatty acid methyl ester ethoxylate, 2% of trimethylolpropane oleate, 2% of nitrilotriacetic acid, 2% of sodium secondary alkyl sulfate, 3% of tartaric acid, 18% of propylene glycol, and 44% of deionized water in percentage by mass, and stir at room temperature for 10 min until it becomes clear.

[0031] Steps (2) to (4) are the same as those in Example 1. Example 5

[0032] When slicing the silicon rod, an easy-to-clean single crystal silicon cutting liquid of the present invention is added, and the specific steps include: (1) Preparation of cutting fluid: Prepare by mass percentage: 20% benzyl alcohol-terminated ethylene oxide propylene oxide block polyether, 8% polyacrylamide-acrylic acid, 6% propylene oxide block fatty acid methyl ester ethoxylate sulfonate, 4% polyethylene glycol dioleate, 1% nitrilotriacetic acid, 4% sodium primary alkyl sulfonate, 2% sodium citrate, 8% isopropanol and 47% deionized water, and stir at room temperature for 10 minutes until it becomes clear and transparent.

[0033] Steps (2) to (4) are the same as those in Example 1. Example 6

[0034] When slicing the silicon rod, an easy-to-clean single crystal silicon cutting liquid of the present invention is added, and the specific steps include: (1) Preparation of cutting fluid: Prepare by mass percentage: 25% of benzyl alcohol-terminated ethylene oxide propylene oxide block polyether, 5% of polyacrylamide hydroxyethyl methacrylate, 4% of propylene oxide block fatty acid methyl ester ethoxylate, 2% of propylene oxide block fatty acid methyl ester ethoxylate sulfonate, 4% of polyethylene glycol dioleate, 2% of diethylenetriamine pentacarboxylate, 5% of primary alkyl sodium sulfonate, 3% of malic acid, 5% of polyethylene glycol 300 and 45% of deionized water, and stir at room temperature for 10 minutes until it becomes clear and transparent.

[0035] Steps (2) to (4) are the same as those in Example 1. Comparative Example 1

[0036] The difference between Comparative Example 1 and Example 1 is that no dispersant propylene oxide block fatty acid methyl ester ethoxylate is added to the cutting fluid of Comparative Example 1, and other steps remain the same. Comparative Example 2

[0037] When slicing the silicon rod, add the cutting fluid currently used in the market to cut the silicon wafer. The specific steps include: (1) Slicing: Pour the commonly used cutting fluid (produced by Changzhou Shichuang Energy Co., Ltd., model DM23) into a slicer containing 450L of deionized water at room temperature. After mixing evenly, use 24 tungsten wire to cut the silicon rod. The silicon rod is 182mm×1820mm and the whole silicon rod is 800mm long. It takes 90 minutes to complete the cutting, and a silicon wafer with a size of 1820mm×820mm and a thickness of 120μm is obtained; (2) Ultrasonic cleaning: Place the sliced ​​silicon wafer in deionized water for ultrasonic cleaning for 20 minutes; (3) Cleaning and air-drying: The silicon wafer after ultrasonic cleaning is placed in a silicon wafer cleaning machine containing 2% sodium hydroxide (30% by mass), 1% hydrogen peroxide and 2% detergent (produced by Changzhou Shichuang Energy Co., Ltd., model SW3) for ultrasonic cleaning for 1 min, then placed in deionized water for ultrasonic cleaning for 2 min, and finally air-dried.

[0038] test: The silicon wafers cleaned and air-dried in the above-mentioned Examples 1-6 and Comparative Examples 1-2 were subjected to a grading test by a silicon wafer sorting machine. The results are shown in Table 1 below: Table 1 shows the binning test results of the silicon wafers obtained in the examples and comparative examples after cleaning and air drying:

[0039] From the test results in Table 1, we can see that: (1) By comparing Example 1 with Example 3, it can be seen that when the amount of hydrogen peroxide used is reduced, the proportion of dirty wafers and A wafers is not affected. Therefore, the use of the cutting fluid of the present invention can reduce the content of hydrogen peroxide in the cleaning process, indicating that the organic residues on the surface of the silicon wafer of the cutting fluid of the present invention are more easily oxidized and removed; (2) Compared with Comparative Example 1, when no dispersant is added to the cutting fluid of the present invention, the proportion of dirty wafers increases and the proportion of A wafers decreases. Therefore, the dispersant used in the present invention can significantly enhance the cleanliness of the silicon wafer surface and improve the ease of cleaning of the cutting fluid; (3) By comparing Examples 1 to 6 with Comparative Example 2, it can be seen that the proportion of dirty wafers in the silicon wafers obtained by using the cutting fluid of the present invention is reduced, and the proportion of A wafers is increased. This indicates that the cutting fluid of the present invention is easier to remove dirt on the surface of the silicon wafer than the existing cutting fluid, and the organic residue on the silicon wafer after cutting is lower, which has the effect of improving the yield of the silicon wafer.

[0040] The above-mentioned embodiment and comparative example were subjected to parallel comparative experiments. The silicon wafers after slicing, ultrasonic hydrogen peroxide cleaning, and ultrasonic water cleaning and air drying were taken out, and then placed under a hot air blower for air drying. The appearance was observed, and the total organic carbon content (TOC) of the silicon wafer was tested to identify the organic residue on the surface of the silicon wafer. The results are shown in Table 2 below: Table 2 Test results of TOC content on silicon wafer surface at different stages of the embodiment and comparative example:

[0041] From the test results in Table 2, we can see that: (1) In Example 1, there is a lot of residual organic matter on the silicon wafer after slicing. The organic matter can be greatly reduced after ultrasonic water washing alone, and the residue on the silicon wafer surface is further reduced after the post-cleaning step. In comparison, after reducing or not adding dispersant in Example 2 and Comparative Example 1, the organic residue after slicing and ultrasonic cleaning is higher, indicating that the addition of the dispersant of the present invention is conducive to the spontaneous separation of organic matter in the cutting liquid from the silicon wafer surface, making the cutting liquid more water-cleanable.

[0042] (2) The results of Examples 1 to 6 show that the organic components on the surface of the silicon wafer cut using the cutting fluid of the present invention are more easily oxidized and removed by the hydrogen peroxide solution, and the content of residual organic matter on the surface after cleaning is significantly lower than that in Comparative Example 2, indicating that the cutting fluid of the present invention has better oxidizable cleaning properties.

[0043] (3) In Example 3, reducing the amount of hydrogen peroxide added in the cleaning and air-drying step to 0.5% has no significant effect on the cleaning of organic residues. The cutting fluid of the present invention can effectively reduce the amount of hydrogen peroxide used in the post-cleaning process.

[0044] By observing the cutting liquid that converges to the bottom of the slicer, a thin layer of sediment can be seen at the bottom of the slicer in Examples 1 to 6, which is caused by the agglomeration and sedimentation of silicon particles; while no sediment is observed at the bottom of the slicer in Comparative Examples 1 to 2. It can be seen that in Examples 1 to 6, due to the addition of a specific dispersant, the accumulation of silicon powder on the cutting surface during the knife exit stage can be reduced to a certain extent to affect the cutting environment, and the silicon powder content in the cutting liquid in a local area will not increase; the silicon powder generated during the silicon wafer cutting process can be dispersed in time, and the residue on the surface of the silicon wafer is difficult to adhere.

[0045] The silicon wafer after slicing, cleaning and air-drying in Example 1 was observed under a microscope. Figure 1 , Figure 2 Observe the silicon wafer after slicing, cleaning and air drying in Comparative Example 1 under a microscope, see Figure 3 , Figure 4 ; Observe the microscope image of silicon wafers currently on the market through a microscope, see Figure 5 . Figure 1 , Figure 3 By comparison, it can be seen that if no dispersant is added to the cutting fluid, a lot of silicon powder will remain on the surface of the silicon wafer, while only a small amount of silicon powder will remain after adding dispersant to the cutting fluid. Figure 2 , Figure 3 , Figure 4 , Figure 5 It can be seen that the surface of the silicon wafer after using the cutting fluid of the present invention is the same as that of the commercially available silicon wafer, and no silicon powder remains.

[0046] The matters not described in detail in the present invention are all known technologies to those skilled in the art.

[0047] Finally, it should be noted that the above specific implementation methods are only used to illustrate the technical solution of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the embodiments, those skilled in the art should understand that the technical solution of the present invention can be modified and replaced by equivalents without departing from the spirit and scope of the technical solution of the present invention, which should be included in the scope of the claims of the present invention.

Claims

1. An easy-to-clean single crystal silicon cutting fluid, characterized in that: The cutting fluid comprises the following components by mass fraction: Wetting agent A 15% to 30%, wetting agent B 5% to 10%, lubricant 2% to 5%, dispersant 4% to 10%, chelating agent 1% to 2%, penetrant 2% to 5%, pH adjuster 1% to 3%, solubilizer 5% to 20%, and the balance is deionized water; the molecular structure of the wetting agent B contains at least one of a hydroxyl group, an amide group or a carboxyl group.

2. The easy-to-clean single crystal silicon cutting fluid according to claim 1, characterized in that: The wetting agent A is selected from one or more of low-foaming ethylene oxide propylene oxide block polyether, octanol-terminated ethylene oxide propylene oxide block polyether, and benzyl alcohol-terminated ethylene oxide propylene oxide block polyether; the molecular weight of the wetting agent A is 1000-4000.

3. The easy-to-clean single crystal silicon cutting fluid according to claim 1, characterized in that: The wetting agent B is selected from one or more of hydroxyethyl starch, polyacrylamide-acrylic acid, polyacrylamide hydroxyethyl methacrylate, hyaluronic acid, and guar gum.

4. The easy-to-clean single crystal silicon cutting fluid according to claim 1, characterized in that: The lubricant is selected from one or more of tetrapolyricinoleate, trimethylolpropane oleate, and polyethylene glycol dioleate.

5. The easy-to-clean single crystal silicon cutting fluid according to claim 1, characterized in that: The dispersant is selected from one or more of propylene oxide block fatty acid methyl ester ethoxylate and propylene oxide block fatty acid methyl ester ethoxylate sulfonate.

6. The easy-to-clean single crystal silicon cutting fluid according to claim 1, characterized in that: The solubilizing agent is selected from one or more of isohexylene glycol, propylene glycol, isopropanol, and polyethylene glycol 300.

7. The easy-to-clean single crystal silicon cutting fluid according to claim 1, characterized in that: The chelating agent is selected from one or more of ethylenediaminetetraacetic acid, sodium alginate, nitrilotriacetic acid, diethylenetriamine pentacarboxylate, and sodium gluconate.

8. The easy-to-clean single crystal silicon cutting fluid according to claim 1, characterized in that: The penetrant is selected from one or more of secondary alkyl sodium sulfate and primary alkyl sodium sulfonate.

9. The easy-to-clean single crystal silicon cutting fluid according to claim 1, characterized in that: The pH regulator is selected from one or more of citric acid, lactic acid, tartaric acid, malic acid and sodium citrate.

10. A method for using an easy-to-clean single crystal silicon cutting fluid, characterized in that: The cutting fluid according to any one of claims 1 to 9 is diluted, and the mass ratio of the cutting fluid to water is 1 to 2:200 to 500; and the diluted cutting fluid is added when slicing the silicon rod.

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