Preparation method of etching machine part protective coating

Abstract

The invention provides a preparation method of a protective coating of an etching machine part. The preparation method comprises the following steps: step 1, forming a first protective coating on the surface of the etching machine part; and 2, forming a second protective coating covering the first protective coating on the surface of the etching machine part through an atomic layer deposition process, wherein the thickness and porosity of the second protective coating are far smaller than those of the first protective coating. A second protective coating is formed on the first protective coating by using an atomic layer deposition process, and the second protective coating is thinner than the first protective coating and finer in particle (extremely low in porosity), so that the surface of the protective coating is more compact, the surface porosity is reduced, the plasma corrosion resistance is improved, the replacement time of the protective coating is prolonged, and the production cost is reduced; wafer defects caused by falling of protective coating particles are reduced, and the product yield is improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a method for preparing a protective coating for etching machine components. Background Art

[0002] In order to effectively prevent the corrosion of the etching machine components by the plasma during the etching process, a protective coating is usually formed on the surface of the etching machine components.

[0003] The existing protective coating is prepared by one-time plasma spray or chemical vapor deposition (CVD) process, and there are a lot of Figure 1 (a) shows holes with uneven surface morphology. After a period of use, plasma bombardment will cause part of the protective coating to fall off. The fallen coating particles fall onto the surface of the wafer to form Figure 1 The defects shown in (b) will affect the product yield and cause economic losses.

[0004] The main solution at present is to regularly replace the protective coating, but the protective coating is expensive, and frequent replacement of the protective coating will greatly increase production costs. Summary of the invention

[0005] In view of the above-mentioned shortcomings of the prior art, the purpose of the present application is to provide a method for preparing a protective coating for etching machine components, so as to solve the problem that the protective coating in the prior art has a short life and is easy to fall off.

[0006] To achieve the above-mentioned purpose and other related purposes, the present application provides a method for preparing a protective coating of an etching machine component, comprising:

[0007] Step 1, forming a first protective coating on the surface of the etching machine component;

[0008] Step 2: forming a second protective coating covering the first protective coating on the surface of the etching machine component by an atomic layer deposition process, wherein the thickness and porosity of the second protective coating are much smaller than those of the first protective coating.

[0009] Preferably, the thickness ratio of the second protective coating to the first protective coating is 1:300-1:500.

[0010] Preferably, the thickness of the second protective coating does not exceed 5 nm.

[0011] Preferably, the porosity of the second protective coating is less than 0.05%.

[0012] Preferably, the temperature of the atomic layer deposition process is 20°C-200°C.

[0013] Preferably, the first protective coating is formed by plasma spraying or chemical vapor deposition process.

[0014] Preferably, the material of the first protective coating layer and the second protective coating layer includes yttrium oxide.

[0015] Preferably, the etching machine component includes a chamber.

[0016] Preferably, the etching machine includes LAM Etch.

[0017] As described above, the method for preparing the protective coating of the etching machine components provided in the present application has the following beneficial effects: using the atomic layer deposition process to form a second protective coating on the first protective coating, the second protective coating is thinner and has finer particles than the first protective coating, making the surface of the protective coating denser, reducing the surface porosity, improving the ability to resist plasma corrosion, extending the replacement time of the protective coating, and reducing production costs; reducing wafer defects caused by falling particles of the protective coating, and improving product yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the specific implementation methods of the present application or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0019] Figure 1 (a) An electron photo showing a large number of holes on the surface of the existing protective coating;

[0020] Figure 1 (b) An electron photo showing wafer defects caused by particles generated by the shedding of the existing protective coating;

[0021] Figure 2 A flow chart showing a method for preparing a protective coating for etching machine components provided in an embodiment of the present application. DETAILED DESCRIPTION

[0022] The following describes the implementation of the present application through specific examples, and those skilled in the art can easily understand other advantages and effects of the present application from the contents disclosed in this specification. The present application can also be implemented or applied through other different specific implementations, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0023] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in this application. Obviously, the described embodiments are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0024] In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicating directions or positional relationships, are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as limiting the present application. In addition, the terms "first", "second", and "third" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance.

[0025] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, it can also be the internal connection of two components, it can be a wireless connection, or it can be a wired connection. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0026] In addition, the technical features involved in the different embodiments of the present application described below can be combined with each other as long as they do not conflict with each other.

[0027] See also Figure 2 , which shows a flow chart of a method for preparing a protective coating for etching machine components provided in an embodiment of the present application.

[0028] like Figure 2 As shown, the method for preparing the protective coating of the etching machine component comprises the following steps:

[0029] Step 1, forming a first protective coating on the surface of the etching machine component;

[0030] Step 2: forming a second protective coating covering the first protective coating on the surface of the etching machine component by an atomic layer deposition process, wherein the thickness and porosity of the second protective coating are much smaller than those of the first protective coating.

[0031] In step one, optionally, a first protective coating is formed on the surface of the etching machine component by plasma spraying or chemical vapor deposition process.

[0032] Exemplarily, the material of the first protective coating layer includes yttrium oxide (Y2O3).

[0033] In step 2, the atomic layer deposition process is performed at a temperature of 20° C.-200° C. to prevent the first protective coating and any materials of the etching machine components from being damaged by high temperature.

[0034] By forming a second protective coating covering the first protective coating through the atomic layer deposition process and having a thickness and porosity far less than the thickness and porosity of the first protective coating, the density of the protective coating formed on the surface of the etching machine component can be effectively improved and the surface porosity can be reduced.

[0035] Exemplarily, the thickness ratio of the second protective coating layer to the first protective coating layer is 1:300-1:500, and the porosity of the second protective coating layer is less than 0.05%.

[0036] Exemplarily, the thickness of the second protective coating does not exceed 5 nm. If the thickness is too thick, it is not conducive to improving the density of the entire protective coating surface. If the thickness is too thin, a continuous and uniform material layer cannot be formed using the atomic layer deposition process.

[0037] Exemplarily, the material of the second protective coating layer includes yttrium oxide (Y2O3).

[0038] As an example, the etching machine component includes a chamber, and the etching machine includes LAM Etch of Lam Research, USA.

[0039] It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present application in a schematic manner. Therefore, the drawings only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0040] In summary, the preparation method of the protective coating for etching machine parts provided by the present application reduces the surface porosity of the protective coating, improves the ability to resist plasma corrosion, prolongs the replacement time of the protective coating, and reduces production costs; reduces wafer defects caused by the falling of protective coating particles, and improves product yield. Therefore, the present application effectively overcomes various shortcomings in the prior art and has a high industrial utilization value.

[0041] The above embodiments are merely illustrative of the principles and effects of the present application and are not intended to limit the present application. Anyone familiar with the technology may modify or change the above embodiments without violating the spirit and scope of the present application. Therefore, all equivalent modifications or changes made by a person of ordinary skill in the art without departing from the spirit and technical ideas disclosed by the present invention shall still be covered by the claims of the present application.

Claims

1. A method for preparing a protective coating for etching machine components, characterized in that: The method comprises: Step 1, forming a first protective coating on the surface of the etching machine component; Step 2: forming a second protective coating covering the first protective coating on the surface of the etching machine component by an atomic layer deposition process, wherein the thickness and porosity of the second protective coating are much smaller than the thickness and porosity of the first protective coating.

2. The method according to claim 1, characterized in that The thickness ratio of the second protective coating layer to the first protective coating layer is 1:300-1:

500.

3. The method according to claim 1 or 2, characterized in that: The thickness of the second protective coating layer does not exceed 5 nm.

4. The method according to claim 1, characterized in that: The porosity of the second protective coating is less than 0.05%.

5. The method according to claim 1, characterized in that The temperature of the atomic layer deposition process is 20°C-200°C.

6. The method according to claim 1, characterized in that The first protective coating is formed by plasma spraying or chemical vapor deposition process.

7. The method according to claim 1, characterized in that The material of the first protective coating layer and the second protective coating layer includes yttrium oxide.

8. The method according to claim 1, characterized in that The etching machine component includes a chamber.

9. The method according to claim 1, characterized in that: The etching machine includes LAM Etch.

Images