Process technology method capable of realizing large-scale mass production of silicon-based platinum-containing metal alloy

Abstract

The invention discloses a large-scale mass production silicon-based platinum-containing metal alloy process technical method, which uses LPCVD (low pressure chemical vapor deposition) equipment instead of process menu calling and menu process development of traditional general equipment, and is mainly used for depositing oxide, nitride, polycrystalline silicon and other nonmetal film media due to the fact that LPCVD is completely called as low pressure chemical vapor deposition. According to the invention, the non-alloy equipment is innovatively used for developing the alloy technology, and the alloy technology development process aiming at the silicon-based platinum metal is completed.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor technology, and specifically is a process technology method for mass production of silicon-based platinum-containing metal alloys. Background Art

[0002] The field of high-reliability power semiconductor process technology has always been in the "deep waters" of semiconductor manufacturing technology. Although semiconductor manufacturing process technology has been introduced into China for many years, it has always been mainly based on imitations from foreign countries, and has not yet been digested and precipitated for a long time to form its own, unique, and high-end technology and process. In particular, the key technical links of high-reliability high-power semiconductor devices still need to be continuously improved.

[0003] Traditional alloy processing technology is roughly divided into two categories: rapid annealing and hot alloying.

[0004] Rapid annealing is characterized by fast heating speed, short holding time, no vacuum process, uncontrollable gas pressure fluctuations, and is mainly used to form shallow alloys. Thermal annealing is a traditional hot furnace tube, with no constraints on gas flow, temperature control, and gas pressure control, resulting in uneven process quality of the deep alloy layer formed and poor consistency between wafer batches. This is a severe challenge to the successful development of high-reliability, high-power devices. Summary of the invention

[0005] The present invention provides a process technology method for mass production of silicon-based platinum-containing metal alloys, which solves the problem of uneven processing quality of high-reliability and high-power devices.

[0006] To achieve the above object, the present invention provides the following technical solutions: A process technology method for mass production of silicon-based platinum-containing alloys, comprising: Selecting a standard industrial silicon substrate as an n-type heavily doped silicon-based substrate, and setting an epitaxial doping concentration range and a thickness range of the n-type heavily doped silicon-based substrate; Performing standard wet cleaning on the n-type heavily doped silicon-based substrate and depositing a metal film layer containing platinum metal; The alloying operation of the metal thin film layer containing platinum metal is completed using LPCVD equipment.

[0007] Preferably, the extraction limit vacuum requirement of the LPCVD equipment is below 5 mtorr.

[0008] Preferably, in the LPCVD equipment chamber, the distance between the wafer boat and the equipment furnace mouth is 60 cm to 120 cm.

[0009] Preferably, in the chamber of the LPCVD equipment, the wafer boat is loaded with wafers every 1 to 5 slots, and when the boat is full, if there are not enough wafers, they are supplemented with fake wafers.

[0010] Preferably, when the alloy operation of the metal film layer containing platinum metal is completed using LPCVD equipment, the boat enters the slow vacuum process and performs step-by-step temperature increase.

[0011] Preferably, the step temperature is 50°C to 150°C.

[0012] Preferably, after the equipment cavity reaches a vacuum state, a process of extracting the ultimate vacuum is performed. Preferably, the vacuum degree is required to be 5mtorr~15mtorr, and the time is maintained for 3min~10min.

[0013] Preferably, when using LPCVD equipment to complete the alloy operation of the metal film layer containing platinum metal, a process of extracting the ultimate vacuum is carried out after the equipment cavity reaches a vacuum state, and then the alloy protective gas Ar or N2 is passed, and the protective gas flow rate is 0.5L / min~10L / min.

[0014] Preferably, when the alloying operation of the metal thin film layer containing platinum metal is completed using LPCVD equipment, the alloy vacuum pressure is 350mtorr~1600mtorr; the alloy temperature is 400℃~600℃, and the alloying time is 10min~40min.

[0015] Compared with the prior art, the present invention has the following beneficial effects: The present invention provides a method for scalable mass production of silicon-based platinum-containing alloy process technology, using LPCVD equipment, rather than the process menu call and menu process development of traditional general equipment. Since LPCVD stands for low-pressure chemical vapor deposition, it is mainly used for depositing non-metallic thin film media such as oxides, nitrides, polysilicon, and other non-general alloy use equipment. The present invention innovatively uses non-alloy equipment to develop alloy technology and completes the alloy process technology development process for silicon-based platinum metal.

[0016] Furthermore, the equipment status preparation, wafer loading process control, boat loading status control and alloy process control, due to the optimization of the best cavity alloy area, the regulation of the number of wafers for the alloy process, etc., the ultimate vacuum is drawn to remove oxygen and other impurity gases in the equipment cavity, and the key process technical parameters such as gas flow, vacuum pressure, alloy temperature, alloy time, etc. of the alloy process are stipulated. Through the application and development of additional functions of LPCVD and the development of a complete set of process technologies, the process quality of alloy technology has been greatly improved, and the quality problems such as shallow alloy and alloy unevenness formed by traditional technical methods have been solved. It can be more widely used in the manufacturing of high-reliability high-power device products and support the research and development of new products, greatly optimizing the electrical parameter characteristics of power device products. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1The present invention is a flow chart of a process technology method for mass production of silicon-based platinum-containing alloys; Figure 2 A schematic diagram of a silicon-based platinum-containing alloy sheet placing device provided by the present invention; Figure 3 A schematic diagram of a silicon-based platinum-containing metal alloy process flow diagram of a LPCVD device provided by the present invention; In the figure, 1-wafer, 2-wafer boat. DETAILED DESCRIPTION

[0018] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings here can be arranged and designed in various different configurations.

[0019] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention claimed for protection, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0020] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0021] In order to enable those skilled in the art to better understand the technical solution of the present invention, the present invention will be further described in detail below with reference to the accompanying drawings.

[0022] like Figure 1 As shown, the present invention provides a process technology method for mass production of silicon-based platinum-containing metal alloys, comprising: S101 selects standard industrial silicon substrate as n-type heavily doped silicon-based substrate, and sets the epitaxial doping concentration range and thickness range of n-type heavily doped silicon-based substrate; S102 performs standard wet cleaning on the n-type heavily doped silicon-based substrate and deposits a metal film layer containing platinum metal; S103 uses LPCVD equipment to complete the alloy operation of the metal film layer containing platinum metal.

[0023] The ultimate vacuum requirement for LPCVD equipment is below 5mtorr.

[0024] In the LPCVD equipment chamber, the distance between the wafer boat and the equipment furnace mouth is 60cm~120cm.

[0025] In the chamber of the LPCVD equipment, wafers are placed in the wafer boat in the manner of loading every 1 to 5 slots. When the boat is full, if there are not enough wafers, fake wafers will be used to fill the gap.

[0026] When using LPCVD equipment to complete the alloy operation of the metal film layer containing platinum metal, the boat enters the slow vacuum process and performs step-by-step temperature increase, with the step temperature ranging from 50℃ to 150℃.

[0027] After the equipment cavity reaches the vacuum state, a process of extracting the ultimate vacuum is carried out. The vacuum degree is required to be 5mtorr~15mtorr, and the time is maintained for 3min~10min.

[0028] When using LPCVD equipment to complete the alloy operation of the metal film layer containing platinum metal, the equipment cavity is vacuumed and then an ultimate vacuum process is carried out. Then, the alloy protection gas Ar or N2 is passed through, and the protection gas flow rate is 0.5L / min~10L / min.

[0029] When the LPCVD equipment is used to complete the alloying operation of the metal thin film layer containing platinum metal, the alloy vacuum pressure is 350mtorr~1600mtorr; the alloy temperature is 400℃~600℃, and the alloying time is 10min~40min.

[0030] This alloy method is significantly different from conventional rapid annealing furnace equipment.

[0031] The characteristics of rapid annealing are fast heating speed, short holding time, no vacuum process, uncontrollable gas pressure fluctuation, single-piece furnace feeding, and shallow alloy formation. Rapid annealing with too fast heating speed and too short holding time may cause alloy problems such as uneven alloy and stress concentration.

[0032] Another embodiment of the present invention provides a process technology method for mass production of silicon-based platinum-containing metal alloys The following steps are involved: Step 1, a process technology method for mass production of silicon-based platinum-containing alloys, using a standard industrial silicon substrate as an n-type heavily doped silicon-based substrate, the epitaxial doping concentration range of the substrate is 10 16 cm -3 ~10 17 cm -3 , substrate thickness is 50µm~400µm; Step 2: After a standard wet cleaning process, a metal film layer containing platinum is deposited with a metal thickness of 30nm to 300nm.

[0033] Step 3, this step is the unique innovation of the present invention. In the embodiment of the present invention, LPCVD equipment is used to complete the alloy process of platinum-containing metal. Since LPCVD is called low-pressure chemical vapor deposition, it is mainly used to deposit non-metallic thin film media such as oxides, nitrides, polysilicon, etc., and is not a general alloy use equipment. The present invention innovatively uses non-alloy equipment to develop alloy technology and processes, and develops related technical processes, process procedures, operating steps, etc. The alloy process technology development process for silicon-based platinum metal has been completed.

[0034] A process technology method for mass production of silicon-based platinum-containing metal alloys, characterized in that: (1) Equipment status preparation: Since the oxygen content in the alloy technology process needs to be controlled to the limit, the alloy equipment requires the use of a strong vacuum state equipment set, and its extraction limit vacuum requirement should be below 5mtorr. Equipment that does not meet the standard will not be used; (2) Wafer loading process control: In the LPCVD equipment chamber, the placement of the wafer boat is regulated, and the distance between the wafer boat and the equipment furnace mouth is 60cm~120cm; the number of wafers in the chamber is regulated, and the wafer boat is placed every 1~5 slots, and the wafer boat is full. If the wafers are insufficient, the wafers are supplemented with false wafers. The constant temperature zone of the chamber should be more than 80cm, and the maximum wafer boat that can be loaded is two, and the minimum wafer boat is one; (3) Boat entry state control: When the boat enters, the temperature is increased step by step from 50℃ to 150℃ during the slow vacuuming process. After the equipment cavity reaches the vacuum state, an ultimate vacuum extraction process is carried out. The vacuum degree is required to be 5mtorr~15mtorr and the time is maintained for 3min~10min.

[0035] (4) Alloy process state control: After the wafer boat is loaded into the furnace, the equipment cavity reaches a vacuum state and then an ultimate vacuum extraction process is carried out. Subsequently, the alloy protection gas Ar or N2 is passed, and the protection gas flow rate is 0.5L / min~10L / min; the alloy vacuum pressure is 350mtorr~1600mtorr; the alloy temperature is 400℃~600℃, and the alloy time is 10min~40min.

[0036] Although the embodiments of the present invention are described above in conjunction with the accompanying drawings, the present invention is not limited to the above-mentioned specific embodiments and application fields, and the above-mentioned specific embodiments are only illustrative and instructive, rather than restrictive. Under the guidance of the specification, a person skilled in the art can also make many forms without departing from the scope of protection of the claims of the present invention, all of which belong to the scope of protection of the present invention.

Claims

1. A process technology method for mass production of silicon-based platinum-containing metal alloys, characterized in that: include: Selecting a standard industrial silicon substrate as an n-type heavily doped silicon-based substrate, and setting an epitaxial doping concentration range and a thickness range of the n-type heavily doped silicon-based substrate; Performing standard wet cleaning on the n-type heavily doped silicon-based substrate and depositing a metal film layer containing platinum metal; The alloying operation of the metal thin film layer containing platinum metal is completed using LPCVD equipment.

2. The method for mass production of silicon-based platinum-containing alloys according to claim 1 is characterized in that: The ultimate vacuum requirement for LPCVD equipment is below 5mtorr.

3. The method for mass production of silicon-based platinum-containing alloys according to claim 1, characterized in that: In the LPCVD equipment chamber, the distance between the wafer boat and the equipment furnace mouth is 60cm~120cm.

4. The method for mass production of silicon-based platinum-containing alloys according to claim 1, characterized in that: In the chamber of the LPCVD equipment, wafers are placed in the wafer boat every 1 to 5 slots. If the boat is full, wafers will be filled with fake wafers.

5. The method for mass production of silicon-based platinum-containing alloys according to claim 1, characterized in that: When using LPCVD equipment to complete the alloy operation of the metal film layer containing platinum metal, the boat enters the slow vacuum process and performs step-by-step temperature increase.

6. The method for mass production of silicon-based platinum-containing alloys according to claim 5, characterized in that: Step temperature: 50℃~150℃.

7. The method for mass production of silicon-based platinum-containing alloys according to claim 1, characterized in that: After the equipment cavity reaches a vacuum state, a process of extracting the ultimate vacuum is carried out.

8. The method for mass production of silicon-based platinum-containing alloys according to claim 7, characterized in that: During the process of extracting the ultimate vacuum, the vacuum degree is required to be 5mtorr~15mtorr, and the time should be maintained for 3min~10min.

9. The method for mass production of silicon-based platinum-containing alloys according to claim 1, characterized in that: When using LPCVD equipment to complete the alloy operation of the metal film layer containing platinum metal, the equipment cavity is vacuumed and then an ultimate vacuum process is carried out. Then, the alloy protection gas Ar or N2 is passed through, and the protection gas flow rate is 0.5L / min~10L / min.

10. The method for mass production of silicon-based platinum-containing alloys according to claim 1, characterized in that: When the LPCVD equipment is used to complete the alloying operation of the metal thin film layer containing platinum metal, the alloy vacuum pressure is 350mtorr~1600mtorr; the alloy temperature is 400℃~600℃, and the alloying time is 10min~40min.

Images