Gas bath crystallization multilayer furnace

Abstract

The invention discloses a gas bath crystallization multilayer furnace, and relates to the technical field of gas bath crystallization. The gas bath crystallization multilayer furnace comprises an equipment shell, a frame is arranged on the inner surface of the equipment shell, and a PLC display screen, a power indicator lamp, an emergency stop switch, an air switch, a double door, a PLC control screen and an external temperature control meter are arranged on the outer surface of the equipment shell. A heating cavity, a first lead screw driving mechanism, a second lead screw driving mechanism, a water cooling plate, a lead screw driver and a lead screw switching power supply are arranged in the equipment shell, a fixing plate and a back plate are arranged in the frame, a temperature control solvent bottle is arranged on the upper surface of the fixing plate, and a first guide pipe is arranged at the top of the temperature control solvent bottle; a second guide pipe is arranged on the outer surface of the first guide pipe, and a third guide pipe is arranged at the end of the second guide pipe. Not only can a product be heated, but also corresponding gas can be introduced in the heating process, so that the gas forms gas bath crystals on the surface of the product, the automation degree is relatively high, and the working efficiency is also relatively high.

Description

Technical Field

[0001] The invention relates to the technical field of gas bath crystallization, in particular to a gas bath crystallization multi-layer furnace. Background Art

[0002] In the fields of glass industry and semiconductor industry, gas bath crystallization usually refers to a technology that uses a gas environment to control the crystallization process of a material. Gas bath crystallization is to place glass or semiconductor materials in a specific gas environment and adjust the temperature, pressure, composition and other parameters of the gas to precisely control the crystal precipitation process inside the glass or semiconductor material. In this way, glass materials with specific crystal structures and properties can be obtained to meet different application requirements.

[0003] The multi-layer furnace in the prior art has poor processing effect on perovskite, flat glass or silicon wafers. It is difficult to make the gas fully and evenly contact the perovskite, flat glass or silicon wafer, which affects the processing quality of the sample. In addition, the existing gas bath crystallization multi-layer furnace has a low degree of automation, resulting in low working efficiency of the equipment. Summary of the invention

[0004] In view of the deficiencies of the prior art, the present invention provides a gas bath crystallization multi-layer furnace to solve the existing problems raised in the above background technology.

[0005] To achieve the above objectives, the present invention is implemented through the following technical solutions: a gas bath crystallization multi-layer furnace, comprising an equipment shell, the inner surface of the equipment shell is provided with a frame, the outer surface of the equipment shell is provided with a PLC display screen, a power indicator light, an emergency stop switch, an air switch, a double door, a PLC control screen and an external temperature control meter, the interior of the equipment shell is provided with a heating cavity, a first screw drive mechanism, a second screw drive mechanism, a water-cooled plate, a screw driver and a screw switch power supply, the interior of the frame is provided with a fixed plate and a back plate, the upper surface of the fixed plate is provided with a temperature-controlled solvent bottle, the top of the temperature-controlled solvent bottle is provided with a first conduit, the outer surface of the first conduit is provided with a second conduit, the end of the second conduit is provided with a third conduit, the outer surface of the third conduit is provided with a first MFC, the end of the first MFC is provided with an air intake control valve, the end of the air intake control valve is provided with an air intake pipe, the heating An air outlet pipe, a thermocouple and a sample holder are arranged inside the cavity, an air outlet control valve is arranged at one end of the air outlet pipe away from the heating cavity, a second MFC is arranged at the end of the air outlet control valve, a fourth conduit is arranged at the end of the second MFC, a connecting plate is arranged on the outer surfaces of the first screw drive mechanism and the second screw drive mechanism, a supporting push rod is arranged on the upper surface of the connecting plate, a heating rod insertion port is arranged on the outer surface of the back plate and the heating cavity, a copper tube groove is arranged inside the water-cooled plate, a water-cooled copper tube is arranged inside the copper tube groove, a cylinder push rod is arranged on the outer surface of the back plate, a pointed cone support is arranged at the corner of the inner surface of the sample holder, a push rod entrance is arranged at the bottom of the heating cavity and the sample holder, a first flow equalizer plate and a second flow equalizer plate are arranged on the inner wall of the heating cavity, a first through hole is arranged inside the first flow equalizer plate, and a second through hole is arranged inside the second flow equalizer plate.

[0006] Preferably, the air switch is arranged on a side of the equipment casing away from the PLC display screen, power indicator light, emergency stop switch, air switch, double doors, PLC control panel and external temperature control meter, a buzzer alarm and a first fan are arranged on the top of the equipment casing, and movable wheels are arranged on the bottom of the equipment casing.

[0007] Preferably, a second fan, a DC power supply, a solid-state relay and an internal temperature control meter are provided at the bottom of the inner surface of the device housing, the thermocouple is electrically connected to the internal temperature control meter, and the internal temperature control meter is electrically connected to the solid-state relay.

[0008] Preferably, one end of the air inlet pipe away from the air inlet control valve is arranged inside the heating cavity, the interiors of the air inlet pipe and the air outlet pipe are both connected to the interior of the heating cavity, the outer surface of the air outlet pipe passes through the heating cavity, and the air inlet pipe and the air outlet pipe are arranged on both sides of the heating cavity.

[0009] Preferably, a fixing frame is provided on the outer surface of the frame, and the water-cooling plate is installed inside the device housing through the fixing frame, and the water-cooling plate is symmetrically arranged on the upper and lower sides of the heating cavity.

[0010] Preferably, the cylinder push rods are symmetrically arranged on both sides of the heating cavity, and the output ends of the cylinder push rods are connected to the front cover plate of the heating cavity.

[0011] Preferably, the outer surface of the supporting mandrel is matched with the inner surface of the mandrel entrance opening.

[0012] Preferably, the first flow equalizer plate is arranged at a position opposite to the end of the air inlet pipe, and the second flow equalizer plate is arranged at a position opposite to the end of the air outlet pipe.

[0013] Beneficial Effects

[0014] The present invention provides a gas bath crystallization multi-layer furnace. It has the following beneficial effects:

[0015] (1) The gas bath crystallization multilayer furnace can adjust the gap distance between the sample to be heated and the upper heating plate during the heating process by setting the first screw drive mechanism and the second screw drive mechanism. It can not only adjust the sample heating rate in different time periods to facilitate uniform heating of the sample, but also make the gas fully contact with the sample after the gas is introduced. In combination with the first flow plate and the second flow plate, the gas entering the heating chamber is evenly dispersed, so that the gas can fully and evenly contact the perovskite, flat glass or silicon wafer, greatly improving the crystal growth quality of the sample.

[0016] (2) The gas bath crystallization multilayer furnace controls the entire processing process through a PLC control system, so that the equipment can not only heat the product, but also introduce the corresponding gas during the heating process, and use gas, temperature and other conditions to assist in controlling the nucleation and growth of the product to form gas bath crystals. The gas bath crystallization multilayer furnace can automatically open and close the heating chamber, automatically lift the sample, automatically heat the sample to a suitable temperature, automatically introduce gas and automatically cool down, which improves the automation level of the equipment and reduces the workload of the staff. In addition, multiple heating chambers are arranged in the equipment, and multiple samples can be processed at the same time, which greatly improves the working efficiency of the equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a schematic diagram of the overall structure of the present invention;

[0018] Figure 2 It is a schematic diagram of the internal structure of the present invention as a whole;

[0019] Figure 3 This is a schematic diagram of the external structure of the heating cavity of the present invention;

[0020] Figure 4This is a schematic diagram of the structure of the exterior of the heating cavity of the present invention from a second viewing angle;

[0021] Figure 5 It is a structural schematic diagram of the connecting plate of the present invention;

[0022] Figure 6 This is a schematic diagram of the structure inside the heating cavity of the present invention;

[0023] Figure 7 This is a schematic diagram of the structure of the interior of the heating cavity from a second viewing angle of the present invention.

[0024] In the figure: 1. Equipment housing; 2. Frame; 3. Moving wheel; 4. Heating chamber; 5. PLC display screen; 6. Power indicator light; 7. Emergency stop switch; 8. Buzzer alarm; 9. First fan; 10. Air switch; 11. Double door; 12. Second fan; 13. DC power supply; 14. Solid-state relay; 15. Internal temperature control meter; 16. Fixing plate; 17. Temperature control solvent bottle; 18. First conduit; 19. Second conduit; 20. Third conduit; 21. First MFC; 22. Inlet control valve; 23. Inlet pipe; 24. Outlet pipe; 25. Outlet control valve; 26. Second MFC; 27. Fourth conduit; 28. First screw drive mechanism; 29. ​​Second screw drive mechanism; 30. Connecting plate; 31. Supporting push rod; 32. Back plate; 33. Heating rod insertion port; 34. Thermocouple; 35. Water-cooled copper tube; 36. Fixing frame; 37. Water-cooling plate; 38. Copper tube groove; 39. Cylinder push rod; 40. Sample placement rack; 41. Conical support; 42. Push rod entry port; 43. First flow equalizer plate; 44. First through hole; 45. Second flow equalizer plate; 46. Second through hole; 47. Screw driver; 48. Screw switch power supply; 49. PLC control panel; 50. External temperature control meter. DETAILED DESCRIPTION

[0025] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0026] Embodiment 1:

[0027] like Figure 1-7As shown, the present invention provides a gas bath crystallization multilayer furnace, including an equipment housing 1, an inner surface of the equipment housing 1 is provided with a frame 2, an outer surface of the equipment housing 1 is provided with a PLC display screen 5, a power indicator light 6, an emergency stop switch 7, an air switch 10, a double door 11, a PLC control panel 49 and an external temperature control meter 50, the interior of the equipment housing 1 is provided with a heating cavity 4, a first screw drive mechanism 28, a second screw drive mechanism 29, a water cooling plate 37, a screw driver 47 and a screw switch power supply 48, the interior of the frame 2 is provided with a fixed plate 16 and a back plate 32, the upper surface of the fixed plate 16 is provided with a temperature control solvent bottle 17, the top of the temperature control solvent bottle 17 is provided with a first conduit 18, the outer surface of the first conduit 18 is provided with a second conduit 19, the end of the second conduit 19 is provided with a third conduit 20, the outer surface of the third conduit 20 is provided with a first MFC 21, the end of the first MFC 21 is provided with an air intake control valve 22, the end of the air intake control valve 22 is provided with an air intake pipe 23, the interior of the heating cavity 4 is provided with an outlet The air pipe 24, the thermocouple 34 and the sample placement rack 40, the end of the air outlet pipe 24 away from the heating chamber 4 is provided with an air outlet control valve 25, the end of the air outlet control valve 25 is provided with a second MFC 26, the end of the second MFC 26 is provided with a fourth conduit 27, the outer surfaces of the first screw drive mechanism 28 and the second screw drive mechanism 29 are provided with a connecting plate 30, the upper surface of the connecting plate 30 is provided with a supporting top rod 31, the back plate 32 and the outer surface of the heating chamber 4 are provided with a heating rod insertion port 33, and the water cooling plate A copper tube groove 38 is arranged inside 37, a water-cooled copper tube 35 is arranged inside the copper tube groove 38, a cylinder push rod 39 is arranged on the outer surface of the back plate 32, a pointed cone support 41 is arranged at the corner of the inner surface of the sample placement rack 40, a push rod entrance 42 is arranged at the bottom of the heating cavity 4 and the sample placement rack 40, a first flow equalizer plate 43 and a second flow equalizer plate 45 are arranged on the inner wall of the heating cavity 4, a first through hole 44 is arranged inside the first flow equalizer plate 43, and a second through hole 46 is arranged inside the second flow equalizer plate 45.

[0028] Specifically, the air switch 10 is arranged on a side of the equipment casing 1 away from the PLC display screen 5, the power indicator light 6, the emergency stop switch 7, the air switch 10, the double door 11, the PLC control panel 49 and the external temperature control meter 50. A buzzer alarm 8 and a first fan 9 are arranged on the top of the equipment casing 1, and a moving wheel 3 is arranged on the bottom of the equipment casing 1.

[0029] Specifically, a second fan 12 , a DC power supply 13 , a solid-state relay 14 and an internal temperature control meter 15 are provided at the bottom of the inner surface of the device housing 1 , the thermocouple 34 is electrically connected to the internal temperature control meter 15 , and the internal temperature control meter 15 is electrically connected to the solid-state relay 14 .

[0030] Specifically, one end of the air inlet pipe 23 away from the air inlet control valve 22 is arranged inside the heating cavity 4, the interiors of the air inlet pipe 23 and the air outlet pipe 24 are both connected to the interior of the heating cavity 4, the outer surface of the air outlet pipe 24 passes through the heating cavity 4, and the air inlet pipe 23 and the air outlet pipe 24 are arranged on both sides of the heating cavity 4.

[0031] Specifically, a fixing frame 36 is provided on the outer surface of the frame 2 , and a water cooling plate 37 is installed inside the device housing 1 through the fixing frame 36 . The water cooling plate 37 is symmetrically arranged on the upper and lower sides of the heating cavity 4 .

[0032] Specifically, the cylinder push rods 39 are symmetrically arranged on both sides of the heating cavity 4 , and the output ends of the cylinder push rods 39 are connected to the front cover plate of the heating cavity 4 .

[0033] Specifically, the outer surface of the support push rod 31 is matched with the inner surface of the push rod entrance 42 .

[0034] Specifically, the first flow equalizer plate 43 is disposed at a position opposite to the end of the air inlet pipe 23 , and the second flow equalizer plate 45 is disposed at a position opposite to the end of the air outlet pipe 24 .

[0035] The working principle and beneficial effects of the above embodiments are as follows:

[0036] When in use, the cylinder push rod 39 is driven to extend through the PLC control system to push the heating chamber 4 outward, and the perovskite, flat glass or silicon wafer is placed on the sample placement rack 40 in the heating chamber 4, and supported at the corners of the bottom of the sample by four pointed cone supports 41, and then the cylinder push rod 39 is controlled to shorten to retract the heating chamber 4 into the device housing 1. Each heating chamber 4 is equipped with a first screw drive mechanism 28 and a second screw drive mechanism 29. The first screw drive mechanism 28 and the second screw drive mechanism 29 are started to drive the connecting plate 30 to move upward, so that the support push rod 31 enters the push rod entrance 4 from the push rod. 2 is inserted into the heating chamber 4 and the sample is lifted up for a certain distance so that the bottom of the sample can be ventilated. The heating rod inserted in the heating rod insertion port 33 is powered on and heated by the PLC control system. The thermocouple 34 monitors the temperature in the heating chamber 4 in real time. The sample in the heating chamber 4 is heated to a suitable temperature by cooperating with the internal temperature control meter 15. During the heating process, the gap distance between the sample to be heated and the upper heating plate is adjusted by adjusting the up and down movement of the supporting push rod 31 so that the sample can be heated uniformly at the required heating rate. During the different time periods of nucleation and growth of the flat glass, perovskite or silicon wafer, the temperature of the sample is controlled by the control system. The warm solvent bottle 17, the first conduit 18, the second conduit 19, the third conduit 20, the first MFC 21, the air inlet control valve 22 and the air inlet pipe 23 introduce different gases into the heating chamber 4 to provide a suitable atmosphere and adjust the crystal growth. The volatiles are removed through the air outlet pipe 24, the air outlet control valve 25, the second MFC 26 and the fourth conduit 27 at a suitable time period. When the gas enters the heating chamber 4 from the air inlet pipe 23, the gas is evenly dispersed into the heating chamber 4 under the cooperation of the first flow plate 43 and the first through hole 44, so that the gas is evenly contacted with the sample. With the cooperation of the two through holes 46, the gas can be evenly discharged from the gas outlet pipe 24 to ensure the uniform flow of the gas in the heating chamber 4. After the heating is completed, the first screw drive mechanism 28 and the second screw drive mechanism 29 control the support top rod 31 to move downward until it completely leaves the heating chamber 4, and then the water-cooled plates 37 and the water-cooled copper tubes 35 on the upper and lower sides of the heating chamber 4 are used to quickly cool the heating chamber 4. After the heating chamber 4 is cooled to a suitable temperature, the cylinder push rod 39 is controlled again to open the heating chamber 4 and replace the next sample. Multiple heating chambers 4 are arranged in the equipment, and multiple samples can be processed at the same time.

[0037] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions. The sentence "includes an element defined by ... does not exclude the existence of other identical elements in the process, method, article or device including the element".

[0038] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A gas bath crystallization multi-layer furnace, comprising an equipment housing (1), characterized in that: The inner surface of the device housing (1) is provided with a frame (2); the outer surface of the device housing (1) is provided with a PLC display screen (5), a power indicator light (6), an emergency stop switch (7), an air switch (10), a double door (11), a PLC control panel (49) and an external temperature control meter (50); the interior of the device housing (1) is provided with a heating cavity (4), a first screw drive mechanism (28), a second screw drive mechanism (29), a water cooling plate (37), a screw driver (47) and a screw switch power supply (48); the interior of the frame (2) is provided with a fixing plate (16) and a back plate (32); A temperature-controlled solvent bottle (17) is arranged on the upper surface of the fixing plate (16); a first conduit (18) is arranged on the top of the temperature-controlled solvent bottle (17); a second conduit (19) is arranged on the outer surface of the first conduit (18); a third conduit (20) is arranged at the end of the second conduit (19); a first MFC (21) is arranged on the outer surface of the third conduit (20); an air intake control valve (22) is arranged at the end of the first MFC (21); an air intake pipe (23) is arranged at the end of the air intake control valve (22); an air outlet pipe (24), a thermocouple (34) and a thermocouple (35) are arranged inside the heating cavity (4). A sample placement rack (40), an outlet control valve (25) is provided at one end of the outlet pipe (24) away from the heating chamber (4), a second MFC (26) is provided at the end of the outlet control valve (25), a fourth conduit (27) is provided at the end of the second MFC (26), a connecting plate (30) is provided on the outer surface of the first screw drive mechanism (28) and the second screw drive mechanism (29), a supporting top rod (31) is provided on the upper surface of the connecting plate (30), a heating rod insertion port (33) is provided on the outer surface of the back plate (32) and the heating chamber (4), and the interior of the water cooling plate (37) A copper tube groove (38) is provided, a water-cooled copper tube (35) is provided inside the copper tube groove (38), a cylinder push rod (39) is provided on the outer surface of the back plate (32), a pointed cone support (41) is provided at the corner of the inner surface of the sample placement rack (40), a push rod entrance (42) is provided at the bottom of the heating cavity (4) and the sample placement rack (40), a first flow equalizer (43) and a second flow equalizer (45) are provided on the inner wall of the heating cavity (4), a first through hole (44) is provided inside the first flow equalizer (43), and a second through hole (46) is provided inside the second flow equalizer (45).

2. The gas bath crystallization multi-layer furnace according to claim 1, characterized in that: The air switch (10) is arranged on a side of the device housing (1) away from the PLC display screen (5), the power indicator light (6), the emergency stop switch (7), the air switch (10), the double door (11), the PLC control panel (49) and the external temperature control meter (50); a buzzer alarm (8) and a first fan (9) are arranged on the top of the device housing (1); and a moving wheel (3) is arranged on the bottom of the device housing (1).

3. The gas bath crystallization multi-layer furnace according to claim 1, characterized in that: A second fan (12), a direct current power supply (13), a solid-state relay (14) and an internal temperature control meter (15) are arranged at the bottom of the inner surface of the device housing (1); the thermocouple (34) is electrically connected to the internal temperature control meter (15); and the internal temperature control meter (15) is electrically connected to the solid-state relay (14).

4. The gas bath crystallization multi-layer furnace according to claim 1, characterized in that: One end of the air inlet pipe (23) away from the air inlet control valve (22) is arranged inside the heating cavity (4); the interiors of the air inlet pipe (23) and the air outlet pipe (24) are both connected to the interior of the heating cavity (4); the outer surface of the air outlet pipe (24) passes through the heating cavity (4); and the air inlet pipe (23) and the air outlet pipe (24) are arranged on both sides of the heating cavity (4).

5. The gas bath crystallization multi-layer furnace according to claim 1, characterized in that: The outer surface of the frame (2) is provided with a fixing frame (36), and the water cooling plate (37) is installed inside the device housing (1) through the fixing frame (36). The water cooling plate (37) is symmetrically arranged on the upper and lower sides of the heating cavity (4).

6. The gas bath crystallization multi-layer furnace according to claim 1, characterized in that: The cylinder push rods (39) are symmetrically arranged on both sides of the heating cavity (4), and the output ends of the cylinder push rods (39) are connected to the front cover plate of the heating cavity (4).

7. The gas bath crystallization multi-layer furnace according to claim 1, characterized in that: The outer surface of the supporting push rod (31) is matched with the inner surface of the push rod entry opening (42).

8. The gas bath crystallization multi-layer furnace according to claim 1, characterized in that: The first flow equalizer plate (43) is arranged at a position opposite to the end of the air inlet pipe (23), and the second flow equalizer plate (45) is arranged at a position opposite to the end of the air outlet pipe (24).

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