Wafer rotary drying mechanism

Abstract

The invention discloses a wafer rotary drying mechanism which comprises a rotary platform. The multiple clamping jaws are connected to the rotating platform, and the multiple clamping jaws are distributed in the circumferential direction at intervals; one side, facing the wafer, of the clamping jaw is provided with a supporting surface and a clamping surface, or the clamping jaw and the rotating platform are matched to form the supporting surface and the clamping surface, and the supporting surface and the clamping surface are used for jointly clamping the wafer; a centrifugal liquid guiding and discharging groove is formed between the supporting surface and the clamping surface, when the wafer is clamped by the supporting surface and the clamping surface, at least part of the centrifugal liquid guiding and discharging groove is located below the height of the lower surface of the wafer, and when the wafer rotates, liquid remaining on the back face of the wafer enters the centrifugal liquid guiding and discharging groove under the action of centrifugal force and is discharged outwards through the centrifugal force. The centrifugal liquid guiding and discharging groove is designed, so that a guiding and discharging space for liquid flowing through the supporting surface in the radial direction and nearby the supporting surface to leave the wafer can be provided in the centrifugal rotary drying process, and residual liquid can be discharged smoothly.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor integrated circuit chip manufacturing, and in particular relates to a wafer rotary drying mechanism. Background Art

[0002] In semiconductor wafer manufacturing, wafer cleaning and drying are key links throughout the entire process, mainly used to remove pollutants, improve yield and ensure the stability of subsequent processes. Cleaning and drying run through the six core links of wafer manufacturing, including lithography, ion implantation, CMP, etching, grinding and packaging, and directly affect device performance and yield. The future trend is to combine wet and dry technologies and develop low-energy, high-uniformity automated cleaning solutions.

[0003] With the continuous advancement of semiconductor production technology, the requirements for cleanliness and drying of Chemical Mechanical Planarization (CMP) equipment are increasing. During wet wafer processing, it is crucial to ensure that the wafer is thoroughly dried and prevent particles in the solution from reattaching to its surface. If the wafer is not sufficiently dried, the particles in the solution may affect the performance of semiconductor components, resulting in equipment failure. Therefore, effectively removing liquid from the wafer is critical to ensuring the normal operation of the equipment. CMP equipment must use appropriate methods to achieve efficient drying of wafers to ensure production quality and equipment stability.

[0004] In most CMP equipment, wafer drying usually adopts the centrifugal spin drying method. The structure of this method mainly includes a clamping device and a supporting device. There are three stages in the drying mechanism, and the wafer also exists in three states: ① Before drying, it is placed on the supporting device, and the front and back of the wafer are wet; ② During the centrifugal spin drying process, the clamping device clamps the wafer and rotates the wafer. Due to the centrifugal force, the liquid on the front and back of the wafer needs to be completely dried in this process to achieve drying; ③ After drying, the wafer stops rotating, the clamping device releases the wafer, the wafer is completely dried, the drying mechanism has completed the drying work, and the wafer can enter the next process. Whether the wafer can reach a completely dry state is crucial in the centrifugal spin drying process in stage ②. The realization of wafer drying depends on whether the wafer can be completely dried in the centrifugal spin drying process in stage ②. The working principle of drying wafers is: during the centrifugal spin drying process in stage ②, the wafer placed on the supporting device can be driven and fixed by the clamping device passively through centrifugal force or actively through cylinders, magnets, etc. The rotating motor drives the clamping device to rotate, thereby realizing the rotation of the wafer. The centrifugal force throws the liquid on the wafer off to achieve drying.

[0005] However, there is a difficult problem in actual use: when the wafer rotates, the back side of the wafer is always in contact with the support device, and a small angle and water storage space are formed between the back side of the wafer and the support device. During the spin drying stage, when the liquid on the back side of the wet wafer leaves the wafer radially from the center to the circumference, the liquid flowing radially through the support device and its vicinity is easily sucked into this space due to the capillary effect, such as Fig.23 , Fig.24 As shown, although most of the front and back areas of the wafer can be dried, the liquid in the contact area between the back of the wafer and the support device and its vicinity (the space where the liquid is sucked in due to the capillary effect) is difficult to be dried. When the centrifugal spin drying process ② is completed and the wafer stops rotating, water droplets and water stains still remain in the contact area between the back of the wafer and the support device and its vicinity, which is not allowed (under normal circumstances, no water droplets or water stains should remain on the entire back of the wafer). For high-standard and high-process CMP equipment, the dryness and cleanliness of the back of the wafer are even more important indicators for evaluating the process. These residual water droplets and water stains will seriously affect the completion quality and efficiency of the overall process of the CMP equipment. Summary of the invention

[0006] In order to overcome the shortcomings of the prior art, the present invention provides a wafer rotary drying mechanism, which solves the problem that water droplets and water stains are easily left at the contact point between the back of the wafer and the support surface and its vicinity during the centrifugal rotary drying process of the wafer and are difficult to remove.

[0007] The technical solution adopted by the present invention to solve the technical problem is: a wafer rotary drying mechanism, comprising: Rotating platform; A plurality of claws connected to the rotating platform and spaced apart in the circumferential direction; The clamping claw has a supporting surface and a clamping surface on the side facing the wafer, or the clamping claw and the rotating platform cooperate to form a supporting surface and a clamping surface, and the supporting surface and the clamping surface are used to clamp the wafer together; A centrifugal drainage liquid groove is provided between the supporting surface and the clamping surface. When the supporting surface and the clamping surface clamp the wafer, at least a portion of the centrifugal drainage liquid groove is located below the height of the lower surface of the wafer. When the wafer rotates, the liquid retained on the back of the wafer enters the centrifugal drainage liquid groove under the action of centrifugal force and is discharged outward by centrifugal force.

[0008] Furthermore, there is a gap between the back side of the wafer and the supporting surface, and part of the liquid is retained in the gap due to the capillary effect.

[0009] Furthermore, at least a portion of the centrifugal drainage tank is parallel to the tangent direction of the wafer placed on the rotating platform.

[0010] Furthermore, the centrifugal drainage liquid groove is in an arc shape, and the circle fitted by the centrifugal drainage liquid grooves of the multiple clamping claws is concentric with the wafer placed on the rotating platform.

[0011] Furthermore, at least a portion of the centrifugal drainage tank is located below the height of the lower surface of the wafer, which includes a state where the wafer is stationary on the rotating platform, and also includes a state where the wafer and the rotating platform are rotating at high speed.

[0012] Furthermore, both ends of the centrifugal drainage tank are open.

[0013] Furthermore, the side surface of the wafer has at least a lower rounded corner section and a straight section, and the centrifugal drainage liquid groove has an opening, and the width of the opening is less than or equal to the width of the lower rounded corner section.

[0014] Furthermore, the side surface of the wafer has at least a lower rounded section and a straight section, and the clamping surface abuts against the straight section.

[0015] Furthermore, the centrifugal drainage tank has an opening, and the height of the opening is less than or equal to the height of the lower fillet section.

[0016] Furthermore, the side surface of the wafer has an upper rounded corner section; the clamping claw is provided with a limiting surface for preventing the wafer from escaping upwards, and the limiting surface is located above the clamping surface and can abut against the upper rounded corner section.

[0017] Furthermore, the center of the centrifugal drainage tank is located below the highest height of the supporting surface.

[0018] Furthermore, the inner wall of the centrifugal drainage tank is an arc surface.

[0019] Furthermore, the supporting surface includes a horizontal placement surface and a climbing surface arranged on the outer peripheral side of the horizontal placement surface, and the centrifugal drainage liquid groove is located between the clamping surface and the climbing surface.

[0020] Furthermore, the climbing surface is a curved climbing surface.

[0021] Further, the number of the rotating platform is one, the number of the clamping claws is three or more than three, and they are evenly spaced along the circumference of the rotating platform. When the rotating platform rotates, the upper part of the clamping claw rotates inward and downward, and the supporting surface and the clamping surface jointly clamp the wafer; or, A plurality of rotating platforms are connected to the rotating base, and the clamping claws are eccentrically connected to the rotating platforms. When the rotating platforms rotate, the clamping claws rotate along with the rotating platforms and approach the wafer.

[0022] The beneficial effects of the present invention are as follows: 1) During the centrifugal rotation process, the tiny gap between the back of the wafer and the supporting surface is prone to store liquid. These liquids are difficult to be dried due to the capillary effect and surface tension, resulting in residual water droplets and water stains at the contact point between the back of the wafer and the supporting surface and its vicinity after drying, which are difficult to remove. The present invention designs a centrifugal drainage liquid groove that can provide a guide and discharge space for the liquid radially flowing through the supporting surface and its vicinity to leave the wafer during the centrifugal rotation drying process, so that the residual liquid can be discharged smoothly; 2) The centrifugal drainage liquid groove can be parallel to the tangential direction of the wafer, so that the liquid accumulated inside it can be quickly discharged; 3) The design of the centrifugal drainage liquid groove can also play the role of draining and exhausting; 4) The setting of the centrifugal drainage liquid groove will not affect the firm clamping of the wafer during ② centrifugal rotation drying - there is sufficient contact area between the clamping surface and the straight section of the wafer to provide sufficient friction to ensure that the wafer is firmly clamped, and the support surface is in contact with the lower fillet section of the wafer to avoid scratches on the back of the wafer; 5) The centrifugal The ingenious structural design of the drainage tank is that the centrifugal drainage tank is at least partially located below the height of the lower surface of the wafer, which prevents the residual liquid from entering the centrifugal drainage tank and splashing back to the back of the wafer, thereby avoiding the formation of water stains on the back of the wafer; 6) The limit surface is against the rounded corner section on the wafer, forming a limiting effect on the wafer to prevent the wafer from detaching; 7) Under the action of centrifugal force, the residual liquid at the contact point between the back of the wafer and the support surface can be smoothly discharged through the centrifugal drainage tank, thereby avoiding the formation of water stains. This improvement not only solves a major drawback of the original structure, but also does not require major changes to the original structure, and has extremely high practicality and compatibility; 8) It not only improves work efficiency and level, but also promotes the development of existing equipment to higher processes, while further improving the cleaning effect of the wafer back, providing more reliable guarantees for the high-process application of CMP machines; 9) The centrifugal drainage tank structure can adapt to claws of different structures and is suitable for post-cleaning of semiconductor processes at different stages, with high adaptability. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is a side view of the wafer in the present invention.

[0024] Figure 2 This is a three-dimensional diagram of the cooperation between the wafer rotation drying mechanism and the wafer of the first structure in the present invention.

[0025] Figure 3 The first structure of the wafer rotary drying mechanism of the present invention is a partial three-dimensional Figure 1 .

[0026] Figure 4 for Figure 3 A magnified view of the structure in Figure 2.

[0027] Figure 5 The first structure of the wafer rotary drying mechanism of the present invention is a partial three-dimensional Figure 2 .

[0028] Figure 6 for Figure 5 Enlarged view of the structure at B in the figure.

[0029] Figure 7 This is a schematic diagram of the structure of the first structure wafer rotary drying mechanism in the present invention where the clamping claws are located.

[0030] Figure 8 It is a partial schematic diagram of the cooperation between the wafer rotation drying mechanism and the wafer of the first structure in the present invention.

[0031] Fig. 9 It is a schematic diagram of the structure of the centrifugal drainage tank of the wafer rotary drying mechanism of the first structure in the present invention.

[0032] Fig.10 It is a three-dimensional diagram of the wafer rotation drying mechanism of the second structure in the present invention.

[0033] Fig.11 for Fig.10 Enlarged view of the structure at position C in the figure.

[0034] Fig.12 This is a side view of the structure of the second structure wafer rotation drying mechanism in the present invention where the clamping claws are located.

[0035] Fig.13 It is a partial schematic diagram of the cooperation between the wafer rotation drying mechanism and the wafer of the second structure in the present invention.

[0036] Fig.14 It is a schematic diagram of the structure of the centrifugal drainage tank of the wafer rotary drying mechanism of the second structure in the present invention.

[0037] Fig.15 It is a schematic diagram of the coordination structure of the clamping claws and the rotating platform of the wafer rotating drying mechanism of the third structure in the present invention.

[0038] Fig.16 It is a side view of the matching structure of the clamping claw and the rotating platform of the wafer rotating drying mechanism of the third structure in the present invention.

[0039] Fig.17 It is a partial schematic diagram of the cooperation between the wafer rotation drying mechanism and the wafer of the third structure in the present invention.

[0040] Fig.18 It is a schematic diagram of the structure of the centrifugal drainage tank of the wafer rotary drying mechanism of the third structure in the present invention.

[0041] Fig.19 A top view of the centrifugal inverted liquid tank and the wafer placed on the rotating platform in the present invention Figure 1 .

[0042] Fig. 20 for Fig.19 Enlarged view of the structure at D in .

[0043] Fig.21 The top view of the centrifugal inverted liquid tank and the wafer placed on the rotating platform of the present invention Figure 2 .

[0044] Fig. 22 for Fig.21 Enlarged view of the structure at E in FIG.

[0045] Fig.23 It is a partial schematic diagram of the cooperation between a wafer and a supporting device in the prior art.

[0046] Fig.24 for Fig.23 The enlarged view of the structure at F in the figure, label 6 is the space where the liquid is sucked in due to capillary effect.

[0047] Among them, 1-rotating platform, 2-claw, 21-limiting surface, 3-wafer, 31-lower rounded section, 32-straight section, 33-upper rounded section, 41-support surface, 411-horizontal placement surface, 412-climbing surface, 42-clamping surface, 5-centrifugal drainage groove, 51-opening, 6-space for liquid to be sucked in due to capillary effect. DETAILED DESCRIPTION

[0048] In order to enable those skilled in the art to better understand the solutions of the present invention, the following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0049] A wafer rotary drying mechanism includes one or more rotating platforms 1, and claws 2 connected to the rotating platform 1, wherein the claws 2 are multiple and are distributed at intervals in the circumferential direction, and the circumferential direction here can be along the circumference of the wafer 3, or along the circumference of the rotating platform 1, and there is no specific limitation. Specifically, one claw 2 can be set on one rotating platform 1, in which case the number of claws 2 and rotating platforms 1 are both multiple, and the multiple rotating platforms 1 are all connected to the same rotating base (not shown in the figure); or multiple claws 2 can be set on one rotating platform 1, in which case the number of claws 2 is multiple and the number of rotating platforms 1 is one.

[0050] The clamping claw 2 has a supporting surface 41 and a clamping surface 42 on the side facing the wafer 3 . In other words, the clamping claw 2 and the rotating platform 1 cooperate to form the supporting surface 41 and the clamping surface 42 , which are used to clamp the wafer 3 together.

[0051] There is a centrifugal drainage liquid groove 5 between the support surface 41 and the clamping surface 42. When the support surface 41 and the clamping surface 42 clamp the wafer 3, that is, during the centrifugal rotation drying process ②, at least part of the centrifugal drainage liquid groove 5 is located below the height of the lower surface of the wafer 3, so that the liquid that has radially flowed through the support device and its vicinity during the centrifugal rotation drying process ② can be smoothly discharged through the centrifugal drainage liquid groove 5, especially the liquid will not accumulate in the narrow gap between the back of the wafer 3 and the support surface 41, and the liquid on the back of the wafer 3 can be discharged through the centrifugal drainage liquid groove 5, that is, the liquid sucked between the back of the wafer 3 and the support surface 41 due to the capillary effect is discharged through the centrifugal drainage liquid groove 5 under the action of centrifugal force, avoiding the formation of water stains on the surface of the wafer 3. Of course, the centrifugal drainage liquid groove 5 can not only play a role in drainage, but also play a role in exhaust, effectively reducing the surface tension of the liquid, which is beneficial to the discharge of the liquid through the centrifugal drainage liquid groove 5.

[0052] In this embodiment, both ends of the centrifugal drainage liquid groove 5 are open, so that when the rotating platform 1 and the clamping claw 2 rotate with the wafer 3, the liquid retained on the back side of the wafer 3 enters the centrifugal drainage liquid groove 5 under the action of centrifugal force, and, under the action of centrifugal force, the liquid in the centrifugal drainage liquid groove 5 is directly discharged outward through the open ports at both ends, effectively preventing the liquid from flowing back to the back side of the wafer 3, and achieving a better drying effect.

[0053] like Fig.19 , Fig. 20 As shown, at least a portion of the centrifugal drainage liquid groove 5 is parallel to the tangent direction of the wafer 3 placed on the rotating platform 1. Under the action of centrifugal force, the direction in which the liquid on the wafer 3 is thrown out is roughly the tangent direction of the wafer. The centrifugal drainage liquid groove 5 is designed to be parallel to the direction of the wafer tangent, and the liquid thrown out from the surface of the wafer 3 can be discharged to the two open ends of the centrifugal drainage liquid groove 5 more quickly.

[0054] like Fig.21 , Fig. 22 As shown, the centrifugal drainage groove 5 can also be in an arc shape, and the circle formed by the centrifugal drainage grooves 5 of the multiple claws 2 is concentric with the wafer 3 placed on the rotating platform 1. In other words, the centrifugal drainage groove 5 and the outer periphery of the wafer 3 are parallel to each other.

[0055] Since the length of the centrifugal drainage tank 5 is very small compared to the outer circumference of the wafer 3 , the central angle of the arc shape is also relatively small, which will not cause the liquid to fall back onto the surface of the wafer 3 when it is thrown out of the centrifugal drainage tank 5 .

[0056] like Figure 2-Figure 9As shown, at this time, the number of rotating platform 1 is one, and the number of claws 2 is three, which are evenly spaced and connected to the rotating platform 1 in the circumferential direction and are rotatably connected to the rotating platform 1. Of course, the number of claws 2 can also be more than three. The support surface 41 is set on the rotating platform 1, and the support surface 41 is an inclined surface structure inclined from bottom to top and from inside to outside (with Figure 8 Taking the direction shown as an example, the inner side here refers to the inner side where the center of the wafer 3 is located), the clamping surface 42 is arranged on the claw 2.

[0057] When the rotating platform 1 rotates, under the action of centrifugal force, the upper part of the clamping claw 2 rotates inward and downward, and the supporting surface 41 and the clamping surface 42 jointly clamp the wafer 3. At this time, the centrifugal drainage liquid groove 5 is formed by the clamping claw 2 and the rotating platform 1, that is, part of the centrifugal drainage liquid groove 5 is located at the clamping claw 2, and part of the centrifugal drainage liquid groove 5 is located at the rotating platform 1.

[0058] like Figure 1 , Fig. 9 As shown, the side surface of the wafer 3 has a lower rounded section 31, a straight section 32 and an upper rounded section 33. The clamping surface 42 abuts against the straight section 32. In other words, in this embodiment, the clamping surface 42 is a vertical plane, or at least when the wafer 3 is clamped, the clamping surface 42 is a vertical plane.

[0059] like Fig. 9 As shown, the centrifugal drainage tank 5 has an opening 51, and the width of the opening 51 is less than or equal to the width of the lower fillet section 31. Here, the width of the opening 51 is L1, which specifically refers to the width of the opening 51 of the centrifugal drainage tank 5 in the state of clamping the wafer 3, formed by the arc grooves of the claw 2 located below the clamping surface 42 and the supporting surface 41 of the rotating platform 1. The width of the lower fillet section 31 refers to the horizontal distance of the line connecting the two end points of the lower fillet section 31, that is, Figure 1 L2, L1≤L2, thereby ensuring that the wafer 3 is placed flat on the supporting surface 41 and during the whole process of being clamped by the supported surface 41 and the clamping surface 42, the supporting surface 41 is always in contact with the lower rounded corner section 31 of the wafer 3, and the straight part of the back side of the wafer 3 is kept away from the supporting surface 41 as much as possible, so as to avoid scratches on the back side of the wafer 3.

[0060] The height of the opening 51 of the centrifugal drainage tank 5 is less than or equal to the height of the lower fillet section 31. The height of the lower fillet section 31 here refers to the vertical distance between the two end points of the lower fillet section 31, that is, Figure 1 The height of the centrifugal drain tank opening 51 is Fig. 9 , then H≤S, thereby ensuring that when clamping the wafer 3, the clamping surface 42 can abut against the straight section 32 of the side of the wafer 3 as much as possible, ensuring that there is a sufficient contact area between the clamping surface 42 and the wafer 3 to provide sufficient friction force, ensuring that the wafer 3 is firmly clamped and preventing the wafer 3 from flying out.

[0061] In order to prevent the wafer 3 from escaping upward during high-speed rotation, Fig. 9 As shown, the clamping claw 2 is provided with a limit surface 21 for preventing the wafer 3 from escaping upwards. The limit surface 21 is located above the clamping surface 42, and extends obliquely from top to bottom and from inside to outside. Therefore, when the wafer 3 is clamped, the limit surface 21 can be abutted against the upper rounded corner section 33, so that the limit surface 21 forms a downward and inward force on the wafer 3.

[0062] The center of the centrifugal drainage liquid tank 5 is located below the height of the support surface 41, which specifically refers to the maximum height of the support surface 41, so that the liquid thrown out by the rotation and drying of the wafer 3 will not flow back to the wafer 3, or as little liquid as possible will splash back on the back of the wafer 3.

[0063] As described above, the centrifugal drainage liquid groove 5 is formed by the arc groove of the support surface 41 and the claw 2, so that the inner wall of the centrifugal drainage liquid groove 5 is an arc surface. Combined with the arc surface shape of the centrifugal drainage liquid groove 5 and the fact that its center is located below the height of the support surface 41, it is possible to prevent the residual liquid from entering the centrifugal drainage liquid groove 5 and then splashing back to the back of the wafer 3. The water droplets enter from the opening 51 of the centrifugal drainage liquid groove 5, hit the inner wall of the arc surface of the centrifugal drainage liquid groove 5 and then rebound. After the water droplets injected from any angle of the opening 51 of the centrifugal drainage liquid groove 5 rebound, most of the droplets will move toward the center of the centrifugal drainage liquid groove 5. Since the center position of the centrifugal drainage liquid groove 5 is set below the back of the wafer 3, the liquid entering the centrifugal drainage liquid groove 5 can be well guided to a position below the back of the wafer 3, thereby preventing it from splashing back to the back of the wafer 3 and preventing water stains from forming on the back of the wafer 3. Of course, in other embodiments, the specific shape of the centrifugal drainage liquid groove 5 may not be limited.

[0064] Different from the structure of the above-mentioned claw 2 and the rotating platform 1 cooperate to form the supporting surface 41 and the clamping surface 42, as Figure 10-Figure 14 As shown, the supporting surface 41 and the clamping surface 42 are both arranged on the claw 2 , and the centrifugal drainage liquid groove 5 is opened on the claw 2 and is located between the supporting surface 41 and the clamping surface 42 .

[0065] At this time, the centrifugal drainage liquid groove 5 is not formed by combining two parts, but has a certain shape, except that when the clamping claw 2 is not clamping the wafer 3, the opening 51 of the centrifugal drainage liquid groove 5 faces upward, and when the clamping claw 2 is clamping the wafer 3, the opening 51 of the centrifugal drainage liquid groove 5 faces the lower fillet section 31 of the wafer 3. The width and height of the opening 51 of the centrifugal drainage liquid groove 5 and the center of the centrifugal drainage liquid groove 5 are the same as those of the wafer rotation drying mechanism of the first structure, and will not be described in detail.

[0066] like Fig.11As shown, the support surface 41 includes a horizontal placement surface 411, that is, a climbing surface 412 arranged on the outer peripheral side of the horizontal placement surface 411, and the centrifugal drainage liquid tank 5 is located between the clamping surface 42 and the climbing surface 412, and the climbing surface 412 is an arc-shaped climbing surface. The wafer 3 is first placed on the horizontal placement surface 411, and when the rotating platform 1 rotates, under the action of centrifugal force, the upper part of the clamping claw 2 rotates inward and downward, and the wafer 3 moves along the climbing surface 412, and finally the climbing surface 412 and the clamping surface 42 clamp the wafer 3 together.

[0067] The center of the centrifugal drainage liquid groove 5 is located below the highest height of the climbing surface 412. In other words, the center of the arc-shaped centrifugal drainage liquid groove 5 is located at an obliquely lower position outside the wafer.

[0068] The other structures of the second structure wafer rotation drying mechanism are the same as those of the first structure mentioned above and will not be described in detail.

[0069] like Figure 15-18 As shown, in the third structure of the wafer rotation drying mechanism, the cylinder with a larger outer diameter at the bottom is the rotating platform 1, the eccentrically connected structure at the top is the clamping claw 2, and the rotating base (not shown in the figure) connects multiple rotating platforms 1 into one. The rotating platform 1 can rotate relative to the rotating base. The rotating base drives the multiple rotating platforms 1, multiple clamping claws 2 and wafer 3 to rotate at high speed, thereby realizing centrifugal rotation drying of the wafer 3.

[0070] The wafer 3 is first placed on the supporting surface 41 of the claw 2. In this embodiment, the supporting surface 41 is a slope structure that slopes from bottom to top and from inside to outside (with Fig.16 Taking the direction shown as an example, the inner here refers to the inner side where the center of the wafer 3 is located). At this time, the wafer 3 is not in contact with the clamping surface 42. Then the clamping claw 2 rotates with the rotating platform 1 relative to the rotating base, so that the clamping claw 2 approaches the wafer 3, so that the clamping surface 42 contacts the straight section 32 of the wafer 3, thereby realizing the clamping of the wafer 3 by the supporting surface 41 and the clamping surface 42.

[0071] The other structures of the wafer rotation drying mechanism of the third structure are the same as those of the second structure described above and will not be described in detail.

[0072] The above-mentioned wafer rotation drying mechanism can be applied to the photolithography stage of wafer manufacturing, or to the ion implantation stage of wafer manufacturing, or to the CMP stage of wafer manufacturing, or to the etching stage of wafer manufacturing, or to the grinding stage of wafer manufacturing, or to the packaging stage of wafer manufacturing, without specific limitation.

[0073] The above specific implementation modes are used to explain the present invention rather than to limit the present invention. Any modification and change made to the present invention within the spirit of the present invention and the protection scope of the claims shall fall within the protection scope of the present invention.

Claims

1. A wafer rotary drying mechanism, comprising: Rotating platform (1); A plurality of claws (2) connected to the rotating platform (1) and spaced apart in the circumferential direction; The clamping claw (2) has a supporting surface (41) and a clamping surface (42) on the side facing the wafer (3); or the clamping claw (2) and the rotating platform (1) cooperate to form the supporting surface (41) and the clamping surface (42), and the supporting surface (41) and the clamping surface (42) are used to clamp the wafer (3) together; Features: A centrifugal drainage liquid groove (5) is provided between the support surface (41) and the clamping surface (42); when the support surface (41) and the clamping surface (42) clamp the wafer (3), at least a portion of the centrifugal drainage liquid groove (5) is located below the height of the lower surface of the wafer (3); when the wafer (3) rotates, liquid retained on the back side of the wafer (3) enters the centrifugal drainage liquid groove (5) under the action of centrifugal force and is discharged outwardly by the centrifugal force.

2. The wafer rotary drying mechanism according to claim 1, characterized in that: There is a gap between the back side of the wafer (3) and the supporting surface (41), and part of the liquid is retained in the gap due to the capillary effect.

3. The wafer rotary drying mechanism according to claim 1, characterized in that: At least a portion of the centrifugal drainage tank (5) is parallel to the tangent direction of the wafer (3) placed on the rotating platform (1).

4. The wafer rotary drying mechanism according to claim 1, characterized in that: The centrifugal drainage liquid groove (5) is in the shape of an arc, and the circle formed by the centrifugal drainage liquid grooves (5) of the plurality of clamping claws (2) is concentric with the wafer (3) placed on the rotating platform (1).

5. The wafer rotary drying mechanism according to claim 1, characterized in that: At least part of the centrifugal drainage tank (5) is located below the height of the lower surface of the wafer (3), including a state where the wafer (3) is stationary on the rotating platform (1), and also including a state where the wafer (3) and the rotating platform (1) are rotating at high speed.

6. The wafer rotary drying mechanism according to claim 1 or 3, characterized in that: Both ends of the centrifugal drainage tank (5) are open.

7. The wafer rotary drying mechanism according to claim 1, characterized in that: The side surface of the wafer (3) has at least a lower rounded corner section (31) and a straight section (32); the centrifugal drainage channel (5) has an opening (51); the width of the opening (51) is less than or equal to the width of the lower rounded corner section (31).

8. The wafer rotary drying mechanism according to claim 1, characterized in that: The side surface of the wafer (3) has at least a lower rounded corner section (31) and a straight section (32), and the clamping surface (42) abuts against the straight section (32).

9. The wafer rotary drying mechanism according to claim 8, characterized in that: The centrifugal drainage tank (5) has an opening (51), and the height of the opening (51) is less than or equal to the height of the lower rounded corner section (31).

10. The wafer rotary drying mechanism according to claim 8, characterized in that: The side surface of the wafer (3) has an upper rounded corner section (33); the clamping claw (2) is provided with a limiting surface (21) for preventing the wafer (3) from escaping upwards; the limiting surface (21) is located above the clamping surface (42) and can abut against the upper rounded corner section (33).

11. The wafer rotary drying mechanism according to claim 1, characterized in that: The center of the centrifugal drainage tank (5) is located below the highest height of the support surface (41).

12. The wafer rotary drying mechanism according to claim 1 or 11, characterized in that: The inner wall of the centrifugal drainage groove (5) is an arc surface.

13. The wafer rotary drying mechanism according to claim 1, characterized in that: The support surface (41) comprises a horizontal placement surface (411) and a climbing surface (412) provided on the outer peripheral side of the horizontal placement surface (411), and the centrifugal drainage liquid groove (5) is located between the clamping surface (42) and the climbing surface (412).

14. The wafer rotary drying mechanism according to claim 13, characterized in that: The climbing surface (412) is a curved climbing surface.

15. The wafer rotary drying mechanism according to claim 1, characterized in that: The number of the rotating platform (1) is one, the number of the clamping claws (2) is three or more, and they are evenly spaced along the circumference of the rotating platform (1); when the rotating platform (1) rotates, the upper part of the clamping claws (2) rotates inward and downward, and the supporting surface (41) and the clamping surface (42) jointly clamp the wafer (3); or, A plurality of rotating platforms (1) are connected to a rotating base, and a clamping claw (2) is eccentrically connected to the rotating platform (1). When the rotating platform (1) rotates, the clamping claw (2) rotates along with the rotating platform (1) and approaches the wafer (3).

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