Method for testing falling of gas particles in cavity of semiconductor equipment
By using dust particle counters and magnetic coupling components to detect gas particles inside the cavity of the semiconductor device, the problem of difficulty in detecting gas particles falling off in semiconductor device production is solved, and a fast and simple detection effect is achieved.
Patent Information
- Application Number
- CN202411775605.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-04
- Publication Date
- 2025-04-11
AI Technical Summary
In the production of semiconductor devices, it is difficult to detect gas particles falling off inside the cavity of the semiconductor device, and the prior art is difficult to effectively solve this problem.
A test method is adopted, which includes placing a clean chamber in a clean room of 100 or above, and connecting the dust particle counter to the clean chamber through a connecting tube, and using a magnetic coupling component to extract the air at different speeds for detection, so as to achieve dynamic extraction and counting of gas particles.
This method can quickly and easily detect the shedding of gas particles inside the cavity of the semiconductor equipment, with good data repeatability and high reference value, effectively solving the problem of detecting particle content on the surface of the component.
Smart Images
Figure CN119804273A_ABST
Abstract
Description
Technical Field
[0001] The invention relates to the field of semiconductor micro-contamination analysis, and in particular to a method for testing the shedding of gas particles inside a semiconductor device cavity. Background Art
[0002] With the large-scale development of integrated circuits, the line width of semiconductor devices continues to shrink, which puts higher requirements on technical processes, especially in terms of the cleanliness of equipment components. 316L stainless steel plays an important role in semiconductor equipment manufacturing due to its superior corrosion resistance and processing performance. This material is widely used in the manufacture of parts that are in direct contact with gases and liquids in the semiconductor production process, such as pipe valves, ultra-high purity products, gas control components, IGS, etc. The contamination of particles and impurities seriously damages the performance and manufacturing process of semiconductor materials, and becomes the main obstacle to high yield rate of integrated circuit production. Therefore, the ultra-clean production environment can effectively isolate external impurity contamination, and the process raw materials must meet the purity requirements to ensure that the impurity content meets the production specifications. In addition, process equipment must also meet the cleanliness standards of the semiconductor industry to ensure the smooth progress of the overall production process.
[0003] As semiconductor devices develop towards high integration and miniaturization, the difficulty of controlling surface contamination has increased significantly. At the same time, the detection capability requirements for contamination detection equipment used in advanced semiconductor devices are also constantly increasing. Summary of the invention
[0004] In view of the problems existing in the prior art, the present invention provides a method for testing the shedding of gas particles inside a semiconductor device cavity, which solves at least one of the above technical problems.
[0005] The technical solution of the present invention is: a method for testing the shedding of gas particles inside a semiconductor device cavity, characterized in that it comprises the following steps:
[0006] Step 1: Place a clean chamber in the sampling area of a Class 100 or above clean room;
[0007] Step 2: Connect the dust particle counter to the clean chamber with a connecting pipe and install the magnetic coupling component;
[0008] Step 3: The magnetic coupling component does not rotate, and the dust particle counter is used to extract air. The test value is read from the dust particle counter until the initial value stabilizes to 0, in units of counts / m 3 ;
[0009] Step 4: Start the magnetic coupling component to rotate at a speed of 100° / s, use the dust particle counter to extract gas, each test time is 10 minutes, the gas volume is 28.32L every 10 minutes, and the test is repeated 10 times in a row. The test value is read from the dust particle counter in counts / m3 , the counter reads the test value, the unit is counts / m 3 .
[0010] The present invention adopts a simple and fast test method, that is, by installing the component to be tested on the clean chamber, and connecting the dust particle counter to the clean chamber with a connecting pipe to perform particle detection. The dust particle counter controls a certain gas flow rate and completes the purge extraction of the component surface within a certain period of time. The whole process is similar to the dynamic extraction sample, which solves the problem of particle content test on the surface of some components. It is fast and simple, and has strong operability. The test data has good repeatability and the data has reference value.
[0011] Further preferably, in step 2, the dust particle counter is connected to the clean chamber by a connecting pipe, and air can be extracted from the clean chamber through the pipe.
[0012] More preferably, the detectable gas particle sizes inside the semiconductor device cavity are: 0.1 μm, 0.3 μm, 0.5 μm, and 1.0 μm.
[0013] More preferably, the connecting pipe includes, but is not limited to, materials such as polypropylene (PP), perfluoroalkoxy resin (PFA), and polytetrafluoroethylene (PTFE).
[0014] More preferably, the connecting tube needs to be immersed in a nitric acid solution with a mass percentage concentration of 20% for at least one week, taken out and rinsed with ultrapure water for at least six times, and then dried for use.
[0015] Further preferably, in the step 1, the cavity of the clean chamber is cylindrical, and the top of the clean chamber is equipped with a circular sealing cover, and the material of the clean chamber is stainless steel. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] Figure 1 It is a schematic diagram of the testing method of the present invention.
[0017] Reference numerals: 1. dust particle counter; 2. connecting pipe DETAILED DESCRIPTION
[0018] The present invention will be further described below in conjunction with the accompanying drawings. Specific embodiment 1
[0020] A stainless steel magnetic coupler component, tested for surface particle shedding content in a Class 100 laboratory;
[0021] Soak the polypropylene (PP) connecting pipe in a nitric acid solution with a mass concentration of 20% for at least one week, take it out, rinse it with ultrapure water for at least six times, and then spin dry it;
[0022] Connect the dust particle counter 1 to the clean chamber with a connecting pipe 2;
[0023] Installing the magnetic coupling component onto the clean room cavity;
[0024] The magnetic coupling component does not rotate, and the dust particle counter is used to extract air. The test value is read from the dust particle counter until the initial value stabilizes to 0, and the unit is counts / m 3 ; Start the magnetic coupling component to rotate at a speed of 100° / s, use the dust particle counter to extract gas, each test lasts 10 minutes, and the gas volume is 28.32L every 10 minutes, and the test is repeated 10 times. Read the test value from the dust particle counter in counts / m 3 .
[0025] See the schematic diagram of the specific test method for Figure 1 .
[0026] The unit of calculation result is counts / m 3 , see Table 1.
[0027] No. Date Time Sample Period Sample Volume Samole Units Concentration Mode 0.3um 1 2024 / 9 / 21 16∶02∶10 0∶10∶00 28.32 L Counts / M3 0 2 2024 / 9 / 21 16∶12∶10 0:10∶00 28.32 L Counts / M3 0 3 2024 / 9 / 21 16∶22∶10 0∶10∶00 28.32 L Counts / M3 0 4 2024 / 9 / 21 16∶32∶10 0∶10∶00 28.32 L Counts / M3 0 5 2024 / 9 / 21 16∶42∶10 0∶10∶00 28.32 L Counts / M3 0 6 2024 / 9 / 21 16∶52∶10 0∶10∶00 28.32 L Counts / M3 0 7 2024 / 9 / 21 17∶02∶10 0∶10∶00 28.32 L Counts / M3 0 8 2024 / 9 / 21 17∶12∶10 0∶10∶00 28.32 L Counts / M3 0 9 2024 / 9 / 21 17∶22∶10 0∶10∶00 28.32 L Counts / M3 0 10 2024 / 9 / 21 17∶32∶10 0∶10∶00 28.32 L Counts / M3 0
[0028] The above are only preferred embodiments of the present invention. It should be pointed out that, for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.
Claims
1. A method for testing the shedding of gas particles inside a semiconductor device cavity, characterized in that: The steps include: Step 1: Place a clean chamber in the sampling area of a Class 100 or above clean room; Step 2: Connect the dust particle counter to the clean chamber with a connecting pipe and install the magnetic coupling component; Step 3: The magnetic coupling component does not rotate, and the dust particle counter is used to extract air. The test value is read from the dust particle counter until the initial value stabilizes to 0, in units of counts / m 3 ; Step 4: Start the magnetic coupling component to rotate at a speed of 100° / s, use the dust particle counter to extract gas, each test time is 10 minutes, the gas volume is 28.32L every 10 minutes, and the test is repeated 10 times in a row. The test value is read from the dust particle counter in counts / m 3 , the counter reads the test value, the unit is counts / m 3 .
2. A method for testing gas particle shedding inside a semiconductor device cavity according to claim 1, characterized in that: In step 2, the dust particle counter is connected to the clean chamber by a connecting pipe, and air is extracted from the clean chamber through the pipe.
3. The method for testing gas particle shedding inside a semiconductor device cavity according to claim 1, characterized in that: The gas particle sizes that can be detected inside the semiconductor equipment cavity are: 0.1μm, 0.3μm, 0.5μm, and 1.0μm.
4. The method for testing gas particle shedding inside a semiconductor device cavity according to claim 1, characterized in that: The connecting pipe includes, but is not limited to, materials such as polypropylene, perfluoroalkoxy resin, and polytetrafluoroethylene.
5. A method for testing gas particle shedding inside a semiconductor device cavity according to claim 4, characterized in that: The connecting pipe needs to be soaked in a nitric acid solution with a mass percentage concentration of 20% for at least one week, taken out and rinsed with ultrapure water for at least six times, and then dried for later use.
6. The method for testing gas particle shedding inside a semiconductor device cavity according to claim 4, characterized in that: In the step 1, the cavity of the clean chamber is cylindrical, and the top of the clean chamber is equipped with a circular sealing cover, and the material of the clean chamber is stainless steel.