Wafer resistivity detection device and method

Abstract

The invention discloses a wafer resistivity detection device and method, and relates to the technical field of detection, the wafer resistivity detection device comprises a probe and a measuring instrument, the lower end of the probe is provided with four probes, an adjusting mechanism comprises an accommodating groove formed in the probe, a sleeve is rotatably connected in the accommodating groove, and the probe is arranged in the sleeve. A first connecting rod close to the probe is fixedly connected to the sleeve, a second connecting rod far away from the probe is rotationally connected to the sleeve, swing rods are hinged to the two ends of the first connecting rod and the two ends of the second connecting rod, a supporting rod is hinged to the free end of each swing rod, and the supporting rods are in sliding connection with the probe. The probes are connected with the corresponding supporting rods in a sliding mode, and the conversion mechanism is arranged in the containing groove and used for adjusting the first connecting rod and the second connecting rod to be in a parallel state or a staggered state; the method is suitable for the detection requirement that the distance between the probes needs to be changed frequently, various resistivity measurement requirements are met, and the detection convenience is improved.

Description

Technical Field

[0001] The present invention relates to the field of detection technology, and in particular to a wafer resistivity detection device and method. Background Art

[0002] In the field of semiconductor manufacturing, the resistivity of semiconductor wafers is one of the most critical parameters. Whether the resistivity is within the qualified range directly affects the overall performance of the semiconductor wafer. Therefore, in actual production, the resistivity of semiconductor wafers needs to be tested. The resistivity of wafers is generally tested by the four-probe method, which is to place four equally spaced probes on the surface of the wafer, allow current to flow into the two outer probes, measure the voltage between the two inner probes, and calculate the resistivity based on the formula.

[0003] However, when the four-probe method is used to detect the resistivity of wafers, since the distance between multiple probes is fixed, when detecting the resistivity of small-area wafers, the arrangement of the probes cannot be adjusted according to the situation of the wafer to detect the trace measurement area. At the same time, when detecting the resistivity of the wafer under special circumstances, it is usually necessary to replace the probes with different probe spacings to detect the wafer to ensure the accuracy of the test data. This is not only not suitable for occasions where the probe spacing needs to be adjusted frequently, but also not conducive to improving the timeliness of detecting the resistivity of the wafer.

[0004] Therefore, a wafer resistivity detection device and method are invented to solve the above problems. Summary of the invention

[0005] The main purpose of the present invention is to provide a wafer resistivity detection device and method, which can effectively solve the technical problems in the background technology.

[0006] To achieve the above object, the technical solution adopted by the present invention is: a wafer resistivity detection device, including a probe and a measuring instrument, wherein four equally spaced probes are arranged at the lower end of the probe, and further comprising: An adjustment mechanism, the adjustment mechanism comprising a receiving groove provided in the probe, a sleeve rotatably connected in the receiving groove, a first connecting rod close to the probe fixedly connected to the sleeve, a second connecting rod rotatably connected to the sleeve away from the probe, swing rods are hinged at both ends of the first connecting rod and the second connecting rod, each of the swing rods free ends is hinged to a support rod, the support rod is slidably connected to the probe, and the probe is slidably connected to the corresponding support rod; A transformation mechanism, the transformation mechanism is arranged in the accommodating groove and is used to adjust the first connecting rod and the second connecting rod to be in a parallel state or a staggered state; A fine-tuning mechanism, the fine-tuning mechanism is arranged in the probe and is used to adjust the distance between the plurality of probes; A locking mechanism is arranged in the accommodating groove and is used to lock the rotation of the sleeve.

[0007] Preferably, the adjustment mechanism also includes a guide groove opened on the probe and connected to the accommodating groove, the support rod is located in the guide groove, the support rod is rotatably connected to a steering block, and the steering block is hingedly connected to the corresponding free end of the rocker arm.

[0008] Preferably, the conversion mechanism includes two blocking plates fixedly connected to the inner wall of the accommodating groove, and the opposite surfaces of the two blocking plates can contact the second connecting rod. A buffer groove is opened on the circumferential side of the sleeve, and a buffer block is slidably connected in the buffer groove. The buffer block is fixedly connected to the second connecting rod, and the sleeve is connected to the buffer block through a first elastic member. When the buffer block squeezes the first elastic member and contacts one end of the buffer groove, the first connecting rod and the second connecting rod are in a parallel state. When the buffer block no longer squeezes the first elastic member and contacts the other end of the buffer groove, the first connecting rod and the second connecting rod are in an alternating distribution state.

[0009] Preferably, the fine-tuning mechanism includes an adjustment plate slidably connected to the probe, the adjustment plate is provided with a plurality of adjustment slots corresponding to the probes, the adjustment slots are in an inclined state, and the distances between two adjacent adjustment slots that are in the same straight line are equal, the probe can extend into the corresponding adjustment slot, the support rod is provided with a slide slot at one end close to the probe, a slider is slidably connected in the slide slot, the slider is fixedly connected to the corresponding probe, and the slider is connected to the slide slot by a second elastic member.

[0010] Preferably, a cylinder is rotatably connected in the accommodating groove, a guide groove is provided on the cylinder, a push rod is fixedly connected to the side of the adjustment plate close to the cylinder, the free end of the push rod extends into the guide groove, and a clearance groove is provided on the adjustment plate, and one of the probes can slide in the clearance groove.

[0011] Preferably, the locking mechanism includes a rotating shaft rotatably connected to the accommodating groove, the rotating shaft is rotatably connected to the sleeve, a worm wheel is fixedly connected to the rotating shaft, a worm screw meshing with the worm wheel is rotatably connected in the accommodating groove, one end of the worm screw extends out of the probe and is fixedly connected to a knob.

[0012] Preferably, the cylinder is coaxially fixedly connected with the worm, a rotation groove is opened on the inner edge surface of the sleeve, a rotation block is slidably connected in the rotation groove, the rotation block and the rotation groove are connected by a third elastic member, when the rotation block contacts one end of the rotation groove, the position of the adjustment plate remains unchanged, when the rotation block slides to the other end of the rotation groove, the adjustment plate slides toward the direction of the probe.

[0013] Preferably, the two probes on the first connecting rod can be located between the two probes on the second connecting rod, and the probes are both connected with wires, a voltmeter is electrically connected between the two wires on the first connecting rod, and the two wires on the second connecting rod are electrically connected through a power supply.

[0014] Preferably, the voltmeter and the power supply are both located in the measuring instrument. A base is provided at the upper end of the measuring instrument. The base is slidably connected to a mounting frame via a guide rod, and the probe can be inserted into the mounting frame.

[0015] A method for detecting resistivity of a wafer comprises the following steps: S1: firstly, placing the wafer to be tested on the base, and installing the probe on the mounting frame; S2: Secondly, the distance between the probe and the wafer to be measured is adjusted by the mounting frame, and the shape and spacing of the probe can be adjusted by the adjusting mechanism to meet different wafer measurements; S3: Then the power supply provides current, so that the power supply forms a loop through the wire, the probe and the wafer to be tested, and the voltmeter, the wire and the probe form a loop through the wafer to be tested, and the voltage drop is measured by the voltmeter; S4: Finally, the resistivity of the wafer to be tested is calculated by a formula using the applied current, the voltage drop measured by the voltmeter, and the distance between the probes applying the current, and the average value is determined by multiple measurements to reduce the detection error.

[0016] Technical effects and advantages of the present invention: 1. The present invention can convert the parallel or staggered state of the first connecting rod and the second connecting rod to form a square arrangement or a linear arrangement of probes. The probes arranged in the positive direction can not only form a smaller measurement micro-area, but also be more suitable for electrical property detection of a local micro-area of ​​the sample. The side length of the probes arranged in the positive direction can also be changed within the range of the measurement micro-area, which is conducive to the position adjustment of the probes in the measurement micro-area, so as to measure the resistivity, which can effectively reflect the microscopic heterogeneity of the sample. At the same time, the linearly arranged probes can better cover the measurement area, improve the accuracy of resistivity detection, and the probes can be changed on the same probe, which is not only convenient for adapting to wafers of different specifications, but also avoids the problem of constantly changing different probes for detection, and further improves the timeliness of detecting the resistivity of the wafer, thereby facilitating comprehensive detection of the resistivity of the wafer.

[0017] 2. The present invention provides an adjustment plate and an adjustment slot. When a plurality of probes are transformed from a positive direction array into a linear array, the distance between the plurality of probes can be equidistantly adjusted through the adjustment slot on the adjustment plate, thereby facilitating the equidistant adjustment of the distance between two adjacent probes. This not only facilitates multiple probes to cover a large area of ​​a wafer, but also facilitates changing the spacing between adjacent probes, and detects the resistivity of the wafer according to different spacings. At the same time, it facilitates better detection of the resistivity of the wafer under different characteristics. This not only improves the detection efficiency and accuracy, but also meets the needs of various resistivity measurements. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a schematic diagram of the overall structure of the present invention; Figure 2 It is a cutaway schematic diagram of the present invention; Figure 3 For the present invention Figure 2 A partial enlarged view of the middle A; Figure 4 It is a structural schematic diagram of the adjusting mechanism and the fine-tuning mechanism in the present invention; Figure 5 A top view of one form of the adjustment mechanism in the present invention; Figure 6 A top view of another form of the adjustment mechanism in the present invention; Figure 7 It is a schematic diagram of the structure of the probes arranged in a square in the present invention; Figure 8 It is a schematic diagram of the structure of the linearly arranged probes in the present invention; Fig. 9 It is a schematic diagram of the explosion of the structure of the first connecting rod and the second connecting rod in the present invention; Fig.10 It is a structural cross-sectional view of the rotating shaft and the sleeve in the present invention; Fig.11It is a schematic diagram of the structure of the connection between the support rod and the probe in the present invention.

[0019] In the figure: 1, probe; 101, measuring instrument; 2, probe; 3. Adjustment mechanism; 301. Accommodation groove; 302. Sleeve; 303. First connecting rod; 304. Second connecting rod; 305. Swing rod; 306. Support rod; 307. Guide groove; 308. Steering block; 4. Transformation mechanism; 401. Blocking plate; 402. Buffer groove; 403. Buffer block; 404. First elastic member; 5. fine adjustment mechanism; 501. adjustment plate; 502. adjustment slot; 503. slide slot; 504. slider; 505. second elastic member; 506. cylinder; 507. guide slot; 508. ejector rod; 509. clearance slot; 6. Locking mechanism; 601. Rotating shaft; 602. Worm wheel; 603. Worm; 604. Knob; 605. Rotation slot; 606. Rotation block; 607. Third elastic member; 7. Wire; 8. Voltmeter; 9. Power supply; 10. Base; 11. Guide rod; 12. Mounting bracket. DETAILED DESCRIPTION

[0020] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0021] Embodiment 1 In the prior art, when testing the resistivity of a wafer, a four-probe method is generally used to test the resistivity of the wafer. However, during the testing process, since the distances between multiple probes are fixed and the arrangement of the probes cannot be adjusted according to the conditions of the wafer, when testing the resistivity of the wafer under special circumstances, it is usually necessary to replace probes with different probe spacings to ensure the accuracy of the test data. Therefore, this embodiment is specially invented to solve the above problem.

[0022] like Figure 1-Figure 5 As shown, this embodiment provides a wafer resistivity detection device, including a probe 1 and a measuring instrument 101, wherein four equally spaced probes 2 are arranged at the lower end of the probe 1, and further comprising: The adjusting mechanism 3 includes a receiving groove 301 provided in the probe 1, a sleeve 302 is rotatably connected in the receiving groove 301, a first connecting rod 303 close to the probe 2 is fixedly connected to the sleeve 302, a second connecting rod 304 far away from the probe 2 is rotatably connected to the sleeve 302, rocker rods 305 are hinged at both ends of the first connecting rod 303 and the second connecting rod 304, each rocker rod 305 is hinged at the free end to a support rod 306, the support rod 306 is slidably connected to the probe 1, and the probe 2 is slidably connected to the corresponding support rod 306, the adjusting mechanism 3 also includes a guide groove 307 provided on the probe 1 and connected to the receiving groove 301, the support rod 306 is located in the guide groove 307, a steering block 308 is rotatably connected to the support rod 306, and the steering block 308 is hinged to the free end of the corresponding rocker rod 305.

[0023] The conversion mechanism 4 is arranged in the accommodating groove 301, and is used for adjusting the first connecting rod 303 and the second connecting rod 304 to be in a parallel state or a staggered state. The conversion mechanism 4 includes two blocking plates 401 fixedly connected to the inner wall of the accommodating groove 301, and the opposite surfaces of the two blocking plates 401 can contact the second connecting rod 304. A buffer groove 402 is opened on the circumferential side of the sleeve 302, and a buffer block 403 is slidably connected in the buffer groove 402. The buffer block 403 is fixedly connected to the second connecting rod 304, and the sleeve 302 is connected to the buffer block 403 through the first elastic member 404. When the buffer block 403 squeezes the first elastic member 404 and contacts one end of the buffer groove 402, the first connecting rod 303 and the second connecting rod 304 are in a parallel state. When the buffer block 403 no longer squeezes the first elastic member 404 and contacts the other end of the buffer groove 402, the first connecting rod 303 and the second connecting rod 304 are in a staggered distribution state.

[0024] The two probes 2 on the first connecting rod 303 can be located between the two probes 2 on the second connecting rod 304, and the probes 2 are both connected with wires 7. A voltmeter 8 is electrically connected between the two wires 7 on the first connecting rod 303, and the two wires 7 on the second connecting rod 304 are electrically connected through a power supply 9. The voltmeter 8 and the power supply 9 are both located in the measuring instrument 101. A base 10 is provided at the upper end of the measuring instrument 101. The base 10 is slidably connected to a mounting bracket 12 through a guide rod 11, and the probe 1 can be inserted into the mounting bracket 12.

[0025] In actual use, the wafer to be tested is first placed on the base 10, and the probe 1 is installed on the mounting frame 12. Then the mounting frame 12 is adjusted to drive the probe 1 to move toward the wafer. When the probe 2 contacts the surface of the wafer, the power supply 9 on the measuring instrument 101 provides current to act on the wafer to be tested through the wire 7 and the probe 2 to form a loop. At this time, the voltmeter 8 forms a loop through the wire 7, the probe 2 and the wafer to be tested, and the voltage is measured by the voltmeter 8. Since the distances between adjacent probes 2 are equal, and according to the resistivity ρ calculation formula: ρ = V / (I * d), (wherein V is the voltage drop between the voltage measurement probes, I is the applied current, and d is the distance between the current probes), the resistivity of the wafer is calculated. Since the connection methods among the measuring instrument 101, the power supply 9, the voltmeter 8 and the probe 1 are all existing technologies, the specific connection methods are no longer repeated, and a calculation display panel is provided on the measuring instrument 101, which can directly display the resistivity value of the wafer, so that the staff can judge the status of the wafer.

[0026] When it is necessary to change the distance between the probes 2 to detect the resistivity of the wafer, firstly rotate the sleeve 302 in the positive direction, and the sleeve 302 drives the first connecting rod 303 and the second connecting rod 304 to rotate. Since the angle between the first connecting rod 303 and the second connecting rod 304 is 90°, and during the process of the sleeve 302 driving the first connecting rod 303 and the second connecting rod 304 to rotate, when the second connecting rod 304 is not subjected to resistance, under the action of the first elastic member 404 and the buffer groove 402, the constant angle of the first connecting rod 303 and the second connecting rod 304 can be ensured. When the sleeve 302 drives the first connecting rod 303 and the second connecting rod 304 to rotate in the positive and synchronous manner, and the shape of the guide groove 307 is a cross, the first connecting rod 303 and the second connecting rod 304 are connected through the swing rod 305 and The steering block 308 drives the multiple support rods 306 to slide synchronously outward along the guide groove 307. The steering block 308 is slidably connected to the support rod 306, so that the first connecting rod 303 and the second connecting rod 304 can better drive the support rod 306 to slide along the guide groove 307 through the rocker bar 305 and the steering block 308, so that the multiple support rods 306 drive the probes 2 on the corresponding sides to slide outward, thereby increasing the area between the multiple probes 2, and when the sleeve 302 is rotated in the opposite direction, the first connecting rod 303 and the second connecting rod 304 drive the multiple support rods 306 to slide synchronously inward along the guide groove 307 through the rocker bar 305 and the steering block 308, and the support rod 306 drives the probes 2 on the corresponding sides to slide inward, which can perform comparative detection on small-area wafers, thereby improving the accuracy of detection.

[0027] When it is necessary to perform resistivity detection on a wafer with a large area, continue to rotate the sleeve 302 in the forward direction, and the sleeve 302 drives the first connecting rod 303 and the second connecting rod 304 to rotate. When both sides of the second connecting rod 304 are in contact with the blocking plate 401 on the corresponding side, the second connecting rod 304 drives the two probes 2 connected to the power supply 9 to slide outward along the guide groove 307 to the maximum distance through the rocker arm 305 and the steering block 308, and the second connecting rod 304, the rocker arm 305 and the steering block 308 are in the same straight line state. The first connecting rod 303 drives the probe 2 connected to the voltmeter 8 to slide outward along the guide groove 307 to the maximum distance through the rocker arm 305 and the steering block 308, and continues to rotate the sleeve 302. Due to the resistance of the blocking plate 401 on the second connecting rod 304, under the action of the buffer groove 402 and the buffer block 403, the second connecting rod 304 rotates in the opposite direction relative to the rotation direction of the sleeve 302, and the first elastic member 404 is compressed.

[0028] When the first elastic member 404 is compressed to the extreme position and the buffer block 403 slides from one end of the buffer groove 402 to the other end, the sleeve 302 drives the first connecting rod 303 to swing to a state parallel to the second connecting rod 304. During this process, the first connecting rod 303 drives the support rod 306 to slide relatively along the guide groove 307 through the rocker arm 305 and the steering block 308, and an inclined surface is provided at the middle side wall of the guide groove 307 to facilitate the two probes 2 connected to the voltmeter 8 to slide into the other branch of the guide groove 307, so that multiple support rods 306 and probes 2 are in the same straight line. Since the sum of the lengths of the rocker arm 305 and the steering block 308 is one-fourth of the length of the first connecting rod 303 and the second connecting rod 304, the distances between two adjacent probes 2 in the same straight line are equal, thereby converting the arrangement of multiple probes 2 from the positive direction to the linear arrangement, thereby facilitating the resistivity detection of wafers with large areas.

[0029] To sum up, the first connecting rod 303 and the second connecting rod 304 can be transformed into a parallel or staggered state to form a square-arranged or linearly arranged probe 2. The probe 2 arranged in the positive direction can not only form a smaller measurement micro-area, but also be more suitable for electrical property detection of a local micro-area of ​​the sample. The side length of the probe 2 arranged in the positive direction can also be changed within the range of the measurement micro-area, thereby facilitating the position adjustment of the probe 2 in the measurement micro-area, thereby measuring the resistivity, which can effectively reflect the microscopic heterogeneity of the sample. At the same time, the linearly arranged probe 2 can better cover the measurement area, thereby improving the accuracy of resistivity detection. Moreover, the probe 2 can be changed on the same probe 1, which is not only convenient for adapting to wafers of different specifications, but also avoids the problem of constantly changing different probes for detection, and further improves the timeliness of detecting the resistivity of the wafer, thereby facilitating comprehensive detection of the resistivity of the wafer.

[0030] Embodiment 2 During use, it was found that when the probes 2 arranged in the positive direction were changed into the probes 2 arranged linearly, the positions of the probes 2 were fixed, and it was inconvenient to change the distance between the probes 2 to perform multiple resistivity measurements on the wafer, and it could not adapt to different measurement intervals. Therefore, further improvements were made on the basis of the above embodiments.

[0031] like Figure 5-Figure 11 As shown, the fine-tuning mechanism 5 is arranged in the probe 1, and is used for adjusting the distance between multiple probes 2. The fine-tuning mechanism 5 includes an adjusting plate 501 slidably connected to the probe 1, and the adjusting plate 501 is provided with multiple adjusting grooves 502 corresponding to the probes 2. The adjusting grooves 502 are in an inclined state, and the distances between two adjacent adjusting grooves 502 that are in the same straight line are equal. The probes 2 can extend into the corresponding adjusting grooves 502. A sliding groove 503 is provided at one end of the support rod 306 close to the probe 2, and a slider 504 is slidably connected in the sliding groove 503. The slider 504 is fixedly connected to the corresponding probe 2, and the slider 504 is connected to the sliding groove 503 through a second elastic member 505.

[0032] The locking mechanism 6 is arranged in the accommodating groove 301, and is used for locking the rotation of the sleeve 302. The locking mechanism 6 includes a rotating shaft 601 rotatably connected to the accommodating groove 301, the rotating shaft 601 is rotatably connected to the sleeve 302, a worm gear 602 is fixedly connected to the rotating shaft 601, a worm 603 meshing with the worm gear 602 is rotatably connected in the accommodating groove 301, one end of the worm gear 603 extends out of the probe 1 and is fixedly connected to a knob 604.

[0033] A cylinder 506 is rotatably connected in the accommodating groove 301, and a guide groove 507 is provided on the cylinder 506. A push rod 508 is fixedly connected to the side of the adjusting plate 501 close to the cylinder 506, and the free end of the push rod 508 extends into the guide groove 507. A clearance groove 509 is provided on the adjusting plate 501, and one of the probes 2 can slide in the clearance groove 509. The cylinder 506 is coaxially fixedly connected to the worm 603. A rotation groove 605 is provided on the inner edge surface of the sleeve 302, and a rotation block 606 is slidably connected in the rotation groove 605. The rotation block 606 is connected to the rotation groove 605 by a third elastic member 607. When the rotation block 606 contacts one end of the rotation groove 605, the position of the adjusting plate 501 remains unchanged. When the rotation block 606 slides to the other end of the rotation groove 605, the adjusting plate 501 slides toward the direction of the probe 2.

[0034] In actual use, when the first connecting rod 303 and the second connecting rod 304 are in a parallel state, the knob 604 drives the worm 603 to drive the worm wheel 602 to rotate, the worm 603 drives the cylinder 506 to rotate, and the worm wheel 602 drives the sleeve 302 to rotate through the rotating shaft 601. Since the guide groove 507 is composed of an annular groove and an arc groove, and in the process of the first connecting rod 303 and the second connecting rod 304 swinging to a parallel state, the push rod 508 slides in the annular groove of the guide groove 507, so that the position of the push rod 508 does not change. The sleeve 302 is driven to rotate. Under the action of the blocking plate 401, the first connecting rod 303 and the second connecting rod 304 prevent the sleeve 302 from rotating. At this time, the resistance to the rotation of the sleeve 302 is greater than the elastic force of the third elastic member 607, so that the rotating shaft 601 drives the rotation block 606 to overcome the elastic force of the third elastic member 607 and rotate along the rotation groove 605. At the same time, the push rod 508 slides from the annular groove of the guide groove 507 to the arc groove. Since the worm wheel 602 and worm 603 structure have a certain self-locking property, the cylinder 506 and the rotating shaft 601 can be in a stable position.

[0035] When the rotation block 606 slides from one end of the rotation groove 605 to the other end and the third elastic member 607 is compressed to the limit state, the cylinder 506 drives the adjustment plate 501 to slide in the direction of the probe 2 through the guide groove 507 and the push rod 508, and a clearance groove 509 is provided on the adjustment plate 501 to facilitate one of the probes 2 to make way in the guide groove 307. Since the opening of the adjustment groove 502 provided on the adjustment plate 501 corresponds to the corresponding probe 2, and the distances between the two adjacent adjustment grooves 502 on the same straight line are equal, and the distance close to one end of the probe 2 is smaller than the distance away from one end of the probe 2, when the probe 2 is inserted into the adjustment groove 509 on the corresponding side, the adjustment groove 509 is provided on the adjustment plate 501. The node groove 502 enables the adjustment groove 502 to drive two of the probes 2 to move outward along the guide groove 307, and the other two probes 2 to move outward along the guide groove 307. The probe 2 drives the slider 504 to slide along the slide groove 503, and the second elastic member 505 is compressed. Since the distance between the two adjacent adjustment grooves 502 is equal, the distance between the probes 2 after moving is also equidistant, and under the action of the adjustment groove 502, the spacing of the linearly arranged probes 2 can be equidistantly adjusted. When the spacing of the probes 2 is reduced, the above movement can be repeated in reverse, which makes it easier for the probes 2 to better cover the wafer to be tested, thereby improving the accuracy of detecting the wafer resistance.

[0036] To summarize, by setting the adjustment plate 501 and the adjustment slot 502, when the multiple probes 2 are transformed from a positive direction array into a linear array, the distance between the multiple probes 2 can be equidistantly adjusted through the adjustment slot 502 on the adjustment plate 501, so as to facilitate the equidistant adjustment of the distance between two adjacent probes 2. This not only facilitates multiple probes 2 to cover a large area of ​​wafer, but also facilitates changing the spacing between adjacent probes 2, and detects the resistivity of the wafer according to different spacings. At the same time, it is convenient to better detect the resistivity of the wafer under different characteristics. This not only improves the detection efficiency and accuracy, but is also suitable for occasions where the probe spacing needs to be frequently changed, avoiding the situation of preparing a lot of probes 1, and meeting the needs of various resistivity measurements.

[0037] Embodiment 3 This embodiment also provides a method for detecting the resistivity of a wafer, comprising the following steps: S1: First, place the wafer to be tested on the base 10, and install the probe 1 on the mounting frame 12; S2: Secondly, the distance between the probe 1 and the wafer to be measured is adjusted by the mounting frame 12, and the shape and spacing of the probes 2 can be adjusted by the adjustment mechanism 3 to meet different wafer measurements; S3: Then, the power supply 9 provides current, so that the power supply 9 forms a loop through the wire 7, the probe 2 and the wafer to be tested, and the voltmeter 8, the wire 7 and the probe 2 form a loop through the wafer to be tested, and the voltage drop is measured by the voltmeter 8; S4: Finally, the resistivity of the wafer to be tested is calculated by a formula using the applied current, the voltage drop measured by the voltmeter 8, and the distance between the probes 2 applying the current, and the average value is determined by multiple measurements to reduce the detection error.

[0038] The above shows and describes the basic principles and main features of the present invention and the advantages of the present invention. It should be understood by those skilled in the art that the present invention is not limited to the above embodiments. The above embodiments and descriptions are only for explaining the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention may have various changes and improvements, which fall within the scope of the present invention to be protected. The scope of protection of the present invention is defined by the attached claims and their equivalents.

Claims

1. A wafer resistivity detection device, comprising a probe (1) and a measuring instrument (101), wherein the lower end of the probe (1) is provided with four equally spaced probes (2), characterized in that: Also includes: An adjustment mechanism (3), the adjustment mechanism (3) comprising a receiving groove (301) provided in the probe (1), a sleeve (302) being rotatably connected in the receiving groove (301), a first connecting rod (303) close to the probe (2) being fixedly connected to the sleeve (302), a second connecting rod (304) away from the probe (2) being rotatably connected to the sleeve (302), both ends of the first connecting rod (303) and the second connecting rod (304) being hingedly connected to swing rods (305), a free end of each swing rod (305) being hingedly connected to a support rod (306), the support rod (306) being slidably connected to the probe (1), and the probe (2) being slidably connected to the corresponding support rod (306); a transformation mechanism (4), the transformation mechanism (4) being arranged in the accommodating groove (301) and being used for adjusting the first connecting rod (303) and the second connecting rod (304) to be in a parallel state or a staggered state; A fine-tuning mechanism (5), the fine-tuning mechanism (5) being arranged in the probe (1) and used for adjusting the distance between the plurality of probes (2); A locking mechanism (6), the locking mechanism (6) being arranged in the accommodating groove (301) and being used to lock the rotation of the sleeve (302).

2. The resistivity detection device for a wafer according to claim 1, characterized in that: The adjustment mechanism (3) further comprises a guide groove (307) which is formed on the probe (1) and communicates with the receiving groove (301); the support rod (306) is located in the guide groove (307); a steering block (308) is rotatably connected to the support rod (306); and the steering block (308) is hingedly connected to the free end of the corresponding swing rod (305).

3. The resistivity detection device for a wafer according to claim 2, characterized in that: The conversion mechanism (4) comprises two blocking plates (401) fixedly connected to the inner wall of the accommodating groove (301), and the opposing surfaces of the two blocking plates (401) are both capable of contacting the second connecting rod (304). A buffer groove (402) is provided on the circumferential side of the sleeve (302), and a buffer block (403) is slidably connected in the buffer groove (402). The buffer block (403) is fixedly connected to the second connecting rod (304). The sleeve (302) is provided with a first elastic member ( The first connecting rod (303) and the second connecting rod (304) are connected to the buffer block (403); when the buffer block (403) squeezes the first elastic member (404) and contacts one end of the buffer groove (402), the first connecting rod (303) and the second connecting rod (304) are in a parallel state; when the buffer block (403) no longer squeezes the first elastic member (404) and contacts the other end of the buffer groove (402), the first connecting rod (303) and the second connecting rod (304) are in a staggered distribution state.

4. The resistivity detection device for a wafer according to claim 3, characterized in that: The fine adjustment mechanism (5) comprises an adjustment plate (501) slidably connected to the probe (1), the adjustment plate (501) is provided with a plurality of adjustment slots (502) corresponding to the probes (2), the adjustment slots (502) are in an inclined state, and the distance between two adjacent adjustment slots (502) in the same straight line is equal, and the probe (2) can extend into the corresponding adjustment slot (502), and the support rod (306) is provided with a slide slot (503) at one end close to the probe (2), a slider (504) is slidably connected in the slide slot (503), the slider (504) is fixedly connected to the corresponding probe (2), and the slider (504) is connected to the slide slot (503) via a second elastic member (505).

5. The resistivity detection device for a wafer according to claim 4, characterized in that: A cylinder (506) is rotatably connected in the receiving groove (301), and a guide groove (507) is provided on the cylinder (506). A push rod (508) is fixedly connected to a side of the adjustment plate (501) close to the cylinder (506), and a free end of the push rod (508) extends into the guide groove (507). A clearance groove (509) is provided on the adjustment plate (501), and one of the probes (2) can slide in the clearance groove (509).

6. The resistivity detection device for a wafer according to claim 5, characterized in that: The locking mechanism (6) comprises a rotating shaft (601) rotatably connected to the receiving groove (301), the rotating shaft (601) being rotatably connected to the sleeve (302), a worm wheel (602) being fixedly connected to the rotating shaft (601), a worm (603) meshing with the worm wheel (602) being rotatably connected in the receiving groove (301), and one end of the worm (603) extending out of the probe (1) and being fixedly connected to a knob (604).

7. The resistivity detection device for a wafer according to claim 6, characterized in that: The cylinder (506) is coaxially fixedly connected to the worm (603); a rotation groove (605) is provided on the inner edge surface of the sleeve (302); a rotation block (606) is slidably connected in the rotation groove (605); the rotation block (606) and the rotation groove (605) are connected via a third elastic member (607); when the rotation block (606) contacts one end of the rotation groove (605), the position of the adjustment plate (501) remains unchanged; when the rotation block (606) slides to the other end of the rotation groove (605), the adjustment plate (501) slides in the direction of the probe (2).

8. The resistivity detection device for a wafer according to claim 7, characterized in that: The two probes (2) on the first connecting rod (303) can be located between the two probes (2) on the second connecting rod (304), and the probes (2) are both connected to wires (7). A voltmeter (8) is electrically connected between the two wires (7) on the first connecting rod (303), and the two wires (7) on the second connecting rod (304) are electrically connected via a power supply (9).

9. The wafer resistivity detection device according to claim 8, characterized in that: The voltmeter (8) and the power supply (9) are both located in the measuring instrument (101). A base (10) is provided at the upper end of the measuring instrument (101). The base (10) is slidably connected to a mounting frame (12) via a guide rod (11). The probe (1) can be inserted into the mounting frame (12).

10. A method for detecting resistivity of a wafer, wherein the method uses the resistivity detection device for a wafer as claimed in claim 9 to detect the resistivity of the wafer, wherein: The following steps are involved: S1: firstly placing a wafer to be tested on the base (10), and mounting the probe (1) on the mounting frame (12); S2: Secondly, the distance between the probe (1) and the wafer to be measured is adjusted by the mounting frame (12), and the shape and spacing of the probes (2) can be adjusted by the adjustment mechanism (3) to meet the requirements of different wafer measurements; S3: Then, the power supply (9) provides current, so that the power supply (9) forms a loop through the wire (7), the probe (2) and the wafer to be tested, and the voltmeter (8), the wire (7) and the probe (2) form a loop through the wafer to be tested, and the voltage drop is measured by the voltmeter (8); S4: Finally, the resistivity of the wafer to be tested is calculated by a formula based on the applied current, the voltage drop measured by the voltmeter (8), and the distance between the probes (2) applying the current, and the average value is determined by multiple measurements to reduce the detection error.

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