An optoelectronic coupling type LSPR variable infrared emissivity device, its preparation method and application

Abstract

The present invention discloses a photoelectrically coupled LSPR variable infrared emissivity device, its preparation method and application. The photoelectrically coupled LSPR variable infrared emissivity device successively includes a conductive base layer, a hole layer, an aluminum-doped zinc oxide nanocrystal layer and an infrared transparent electrode layer from bottom to top. The infrared transparent electrode layer and the conductive base layer are respectively connected to positive and negative electrodes. The infrared transparent electrode layer is made of a material that can transmit ultraviolet light and infrared light, and the hole layer is made of a material that can realize electron storage and transmission. The aluminum-doped zinc oxide nanocrystal layer is excited by ultraviolet light to generate photoelectrons injected into the aluminum-doped zinc oxide nanocrystal layer. After applying a positive voltage, the photoelectrons transfer to the hole layer, and the infrared emissivity is regulated through electron transfer. The photoelectrically coupled LSPR variable infrared emissivity device prepared by the present invention simultaneously has the advantages of simple structure of the photoinduced variable infrared emissivity device and flexible regulation of the electroinduced variable infrared emissivity device.

Description

Technical Field

[0001] The present invention belongs to the technical field of infrared dynamic camouflage, and particularly relates to a photo - electro - coupled LSPR variable infrared emissivity device, a preparation method thereof, and an application thereof. Background Art

[0002] Traditional infrared emissivity dynamic regulation mechanisms usually rely solely on triggering means such as light, electricity, force, heat, etc. However, the above - mentioned single triggering means usually face problems such as inflexible regulation and unstable performance. For example, existing electro - variable infrared emissivity devices have complex structures and low performance reliability; while photo - variable infrared emissivity devices have simple structures, but the oxidation and recovery process takes several hours, resulting in inflexible regulation.

[0003] Chinese patent document CN116430631A discloses a new type of electro - variable infrared emissivity device and a preparation method thereof. The electro - variable infrared emissivity device sequentially includes an infrared transparent base layer, a variable infrared emissivity functional layer, an infrared high - reflection layer, an electrolyte layer, an ion storage layer, and a counter - electrode layer from top to bottom. Although the adjustment is relatively flexible, the structure is relatively complex, and multiple functional layers need to be set to achieve the storage and transmission of electrons under electro - variable action. Summary of the Invention

[0004] In order to overcome the problems in the prior art, the present invention provides a photo - electro - coupled LSPR variable infrared emissivity device and a preparation method thereof. This device has the advantages of both the simple structure of a photo - variable infrared emissivity device and the flexible regulation of an electro - variable infrared emissivity device. By adopting a photo - electro - coupled regulation method, a new type of variable infrared emissivity device with reliable structure and flexible regulation is obtained.

[0005] To solve the above - mentioned technical problems, the technical solution proposed by the present invention is as follows:

[0006] The present invention provides a photo - electro - coupled LSPR variable infrared emissivity device. The photo - electro - coupled LSPR variable infrared emissivity device sequentially includes a conductive base layer, a hole layer, an aluminum - doped zinc oxide nanocrystal layer, and an infrared transparent electrode layer from bottom to top. The infrared transparent electrode layer and the conductive base layer are respectively connected to the positive and negative electrodes; the infrared transparent electrode layer is made of a material that can transmit ultraviolet light and infrared light; the hole layer is made of a material that can achieve electron storage and transmission; the aluminum - doped zinc oxide nanocrystal layer is excited by ultraviolet light to generate photoelectrons, and the photoelectrons are injected into the aluminum - doped zinc oxide nanocrystal layer. After applying a positive voltage to the infrared transparent electrode layer, the photoelectrons in the aluminum - doped zinc oxide nanocrystal layer are excited to transfer to the hole layer, and the infrared emissivity is regulated through electron transfer.

[0007] Based on the principle that the local surface plasmon resonance (LSPR) of aluminum-doped zinc oxide nanocrystals (AZO nanocrystals) can be dynamically regulated by both ultraviolet light and an electric field, the present invention proposes a new mechanism for dynamically regulating the infrared emissivity through optoelectronic coupling and collaborative regulation. An infrared transparent electrode layer that can transmit ultraviolet light and infrared light is provided on the upper layer to ensure the transmission of ultraviolet light and infrared light. Ultraviolet light is used to irradiate the AZO nanocrystals and excite photo-electrons to be injected into the AZO nanocrystals, enhancing the LSPR absorption of the AZO nanocrystals, and the device transforms into a state of high infrared emissivity; after applying a positive voltage through the infrared transparent electrode layer, the photo-electrons in the aluminum-doped zinc oxide nanocrystal layer are excited to transfer to the hole layer, the carrier concentration in the AZO nanocrystals decreases, the LSPR absorption weakens, and the device transforms into a state of low infrared emissivity, thereby realizing the regulation of the infrared emissivity.

[0008] As an alternative embodiment, in the optoelectronic coupling type LSPR variable infrared emissivity device provided by the present invention, the material of the hole layer is selected from NiO x , CuGaO2 or a doped material, and the doped material is selected from an inorganic hole transport material doped with NiO x or CuGaO2.

[0009] The hole layer in the present invention mainly serves as an electron "reservoir" for combining the electrons released from the AZO nanocrystals to achieve the effective transport of holes and improve the stability of the optoelectronic coupling device.

[0010] As an alternative embodiment, in the optoelectronic coupling type LSPR variable infrared emissivity device provided by the present invention, the infrared light transmittance of the infrared transparent electrode layer is greater than 60%, and the ultraviolet light transmittance of the infrared transparent electrode layer is greater than 60%.

[0011] As an alternative embodiment, in the optoelectronic coupling type LSPR variable infrared emissivity device provided by the present invention, the material of the infrared transparent electrode layer is selected from one of a metal grid, a conductive silver wire, multi-layer graphene, or a metal with a thickness less than 10 nm.

[0012] As an alternative embodiment, in the optoelectronic coupling type LSPR variable infrared emissivity device provided by the present invention, the material of the conductive base layer is selected from one of a rigid aluminum plate, a rigid copper plate, a flexible aluminum foil, and a PET film sputtered with ITO (indium tin oxide).

[0013] The conductive base layer in the present invention serves as a bearing layer for each functional layer, and its main function is to provide a high infrared reflection background and serve as a counter electrode for applying an electric field.

[0014] As an alternative embodiment, in the optoelectronic coupling type LSPR variable infrared emissivity device provided by the present invention, the diameter of the aluminum-doped zinc oxide nanocrystal layer is 2 to 20 nm.

[0015] As an alternative embodiment, in the optoelectronic-coupled LSPR variable infrared emissivity device provided by the present invention, the morphology is one of spherical, triangular prism-shaped, and square-shaped.

[0016] As an alternative embodiment, in the optoelectronic-coupled LSPR variable infrared emissivity device provided by the present invention, the thickness of the aluminum-doped zinc oxide nanocrystals in the aluminum-doped zinc oxide nanocrystal layer is 0.1 - 10 μm.

[0017] In the present invention, by controlling the diameter, morphology, and thickness of the aluminum-doped zinc oxide nanocrystal layer, the maximum modulation of the emissivity is achieved.

[0018] In the present invention, the AZO nanocrystal layer is used as the variable infrared emissivity functional layer. Therefore, in the design of the infrared transparent electrode, the penetrability of ultraviolet light and infrared light is considered to ensure that ultraviolet light can effectively pass through this layer to excite the electron injection of AZO nanocrystals, while ensuring high infrared transmittance to exhibit the emissivity regulation characteristics of the underlying AZO nanocrystals.

[0019] Based on the same technical concept, the present invention also provides a preparation method for the above-mentioned optoelectronic-coupled LSPR variable infrared emissivity device, including the following steps:

[0020] S1. Select a conductive base layer material, lead out the electrode wire from the conductive base layer, and then fix the hole layer material onto the conductive base layer to obtain the hole layer.

[0021] S2. Fix the aluminum-doped zinc oxide nanocrystals onto the hole layer material in step S1 to obtain the aluminum-doped zinc oxide nanocrystal layer.

[0022] S3. Fix the infrared transparent electrode layer material onto the aluminum-doped zinc oxide nanocrystal layer in step S2, and lead out the electrode lead from the infrared transparent electrode layer, then the optoelectronic-coupled LSPR variable infrared emissivity device is obtained.

[0023] As an alternative embodiment, in the preparation method provided by the present invention, in step S1, the hole layer material is fixed onto the conductive base layer by magnetron sputtering or electron beam evaporation process.

[0024] As an alternative embodiment, in the preparation method provided by the present invention, in step S2, the aluminum-doped zinc oxide nanocrystal layer is prepared by inkjet printing, slot die coating process, spraying process, or spin coating process.

[0025] As an alternative embodiment, in the preparation method provided by the present invention, in step S3, the infrared transparent electrode layer is prepared by spraying, chemical transfer, magnetron sputtering, or electron beam evaporation process.

[0026] Based on the same inventive concept, the present invention also provides an application of the above-mentioned optoelectronic coupling type LSPR variable infrared emissivity device in the field of infrared dynamic camouflage.

[0027] As an alternative embodiment, in the application provided by the present invention, the method of the application is as follows: Ultraviolet light irradiates the aluminum-doped zinc oxide nanocrystal layer to generate photoelectrons, and the photoelectrons are injected into the aluminum-doped zinc oxide nanocrystal layer, so that the optoelectronic coupling type LSPR variable infrared emissivity device is transformed into a high infrared emissivity state; after a positive voltage is applied to the infrared transparent electrode layer, the transfer of photoelectrons in the aluminum-doped zinc oxide nanocrystal layer is excited, so that the optoelectronic coupling type LSPR variable infrared emissivity device is transformed into a low infrared emissivity state.

[0028] Localized Surface Plasmon Resonance (LSPR) refers to the phenomenon that when light is incident on well-conductive nanoparticles, if the incident photon frequency matches the oscillation frequency of the nanoparticles, the nanoparticles will have a strong absorption effect on the photon energy, and then the phenomenon of localized surface plasmon resonance will occur, and at this time, a strong resonance absorption peak will appear in the spectrum.

[0029] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0030] Based on the principle that the dynamic regulation of AZO nanocrystal LSPR can be triggered by both ultraviolet light and electric field simultaneously, the present invention proposes a dynamic regulation device for infrared emissivity through optoelectronic coupling and collaborative regulation. The structure of this device has the advantages of simple structure of the photo-induced variable infrared emissivity device and flexible regulation of the electro-induced variable infrared emissivity device at the same time. By adopting the optoelectronic coupling regulation method, a new type of variable infrared emissivity device with reliable structure and flexible regulation is constructed, which is expected to promote the application of variable infrared emissivity devices in infrared dynamic camouflage. At the same time, this optoelectronic coupling type regulation method also provides a new regulation idea for variable infrared emissivity devices based on other principles. Description of the Drawings

[0031] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the drawings in the following description are some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0032] Figure 1 It is a schematic diagram of the structural principle of the variable infrared emissivity device in the present invention, where Figure 1 (a) is a schematic structural diagram, Figure 1 (b) is a schematic principle diagram;

[0033] Figure 2 Emissivity regulation results of the optoelectronic-coupled LSPR variable infrared emissivity device prepared in Example 1;

[0034] Figure 3 Response time results of the optoelectronic-coupled LSPR variable infrared emissivity device prepared in Example 1. Detailed implementation manners

[0035] To facilitate the understanding of the present invention, the following will describe the present invention more comprehensively and meticulously in conjunction with the accompanying drawings of the specification and preferred embodiments. However, the protection scope of the present invention is not limited to the following specific embodiments.

[0036] Unless otherwise defined, all the technical terms used hereinafter have the same meaning as commonly understood by those skilled in the art. The technical terms used herein are only for the purpose of describing specific embodiments and are not intended to limit the protection scope of the present invention.

[0037] Unless otherwise specifically stated, various raw materials, reagents, instruments, and equipment used in the present invention can be obtained through market purchases or can be prepared by existing methods.

[0038] Example 1

[0039] A preparation method of an optoelectronic-coupled LSPR variable infrared emissivity device, comprising the following steps:

[0040] (1) Preparation of aluminum-doped zinc oxide nanocrystal dispersion

[0041] Dissolve zinc acetate (15.84 mmol) and aluminum acetylacetonate (0.16 mmol) in 32 mL of oleic acid. Degas at 110 °C for 1 hour, then add 16 mL of oleylamine and further degas at this temperature for 15 minutes to obtain a metal precursor. Excess oleyl alcohol (160 mL) is placed in a 250 mL three-necked round-bottom flask and heated to 280 °C under strong stirring. 45 mL (15 mmol) of the metal precursor is slowly added using a syringe pump at an injection rate of 3 mL / min. At the same time, nitrogen is filled, and the nitrogen flow rate is 20 L / h to facilitate the removal of the formed excess water vapor. Nanocrystals are obtained after reacting for 1 h. After washing the nanocrystals with toluene / ethanol solution, the nanocrystals are dispersed in toluene solvent to obtain a spherical aluminum-doped zinc oxide nanocrystal dispersion.

[0042] (2) Select a commercial sputtered ITO PET film as the conductive base layer, and the thickness of its ITO thin film is 200 nm. Use an electron beam evaporation coating machine to evaporate about 200 nm of NiO x onto the conductive base layer as the hole layer.

[0043] (3) Spin-coat the aluminum-doped zinc oxide nanocrystal dispersion prepared in (1) on the hole layer at a spin-coating speed of 1000 rpm for 60 s, and then at 4000 rpm for 20 s. Repeat the above spin-coating process until the film thickness reaches 1.1 μm.

[0044] (4) Use an electron beam evaporation coating machine to evaporate Pt metal with a thickness of about 5 nm onto the AZO nanocrystal layer at a deposition rate of 1 A / s as the infrared transparent electrode layer. Use transparent double-sided tape to tightly paste 0.1 mm silver wires to the ultra-thin metal film of Pt metal and the conductive base layer respectively, so that the silver wires are in full contact with the ultra-thin metal film of Pt metal and the conductive base layer respectively, ensuring good conductivity.

[0045] The schematic structural principle diagram of the optoelectronic coupling type LSPR variable infrared emissivity device prepared in this embodiment is as Figure 1 shown, where Figure 1 (a) is the schematic structural diagram, Figure 1 (b) is the schematic principle diagram, where the conductive base layer is a PET film evaporated with ITO. The hole layer is a 200 nm NiO x thin film. The thickness of the AZO nanocrystal layer film is 1.1 μm. The infrared transparent electrode layer is a 5 nm ultra-thin Pt metal.

[0046] Example 2

[0047] A preparation method of an optoelectronic coupling type LSPR variable infrared emissivity device, comprising the following steps:

[0048] (1) Preparation of aluminum-doped zinc oxide nanocrystal dispersion

[0049] Dissolve zinc acetate (14.4 mmol) and aluminum acetylacetonate (1.6 mmol) in 32 mL of oleic acid. Degas at 110 °C for 1 hour, then add 16 mL of oleylamine and further degas for 15 minutes at this temperature to obtain a metal precursor. Excess oleyl alcohol (160 mL) is placed in a 250 mL three-necked round-bottom flask and heated to 280 °C under strong stirring. Use a syringe pump to slowly add 45 mL (15 mmol) of the metal precursor at an injection rate of 3 mL / min. At the same time, charge nitrogen with a nitrogen flow rate of 20 L / h to facilitate the removal of the formed excess water vapor. After reacting for 1 h, nanocrystals are obtained. After washing the nanocrystals with toluene / ethanol solution, the nanocrystals are dispersed in toluene solvent to obtain a spherical aluminum-doped zinc oxide nanocrystal dispersion.

[0050] (2) Select a rigid aluminum plate conductive base layer material with a thickness of 1 mm, and use an electron beam evaporation coating machine to evaporate about 200 nm of CuGaO2 onto the conductive base layer as the hole layer.

[0051] (3) Spin-coat the zinc oxide nanocrystals doped with aluminum prepared in (1) on the holes at a spin-coating speed of 800 rpm for 60 s, and then at 3000 rpm for 20 s. Repeat the above spin-coating process until the film thickness reaches 5 μm.

[0052] (4) Use a spray gun or a spin coater to uniformly coat the nanosilver wire suspension on the nanocrystal film. Place the coated substrate in an oven and dry it at an appropriate temperature (such as 80 °C) for a period of time until the solvent completely evaporates. Put the dried material into an annealing furnace, set the temperature between 100 - 300 °C, and the time for 1 - 2 hours. Use transparent double-sided tape to tightly paste the silver wires to the infrared transparent electrode layer and the conductive base layer respectively, so that the silver wires are in full contact with the infrared transparent electrode layer and the conductive base layer respectively, ensuring good conductivity.

[0053] The structure of the optoelectronic coupling type LSPR variable infrared emissivity device prepared in this embodiment is as Figure 1 shown, where the conductive base layer is a rigid aluminum plate. The hole layer is a 200-nm CuGaO2 film. The AZO nanocrystal layer is 5 μm. The infrared transparent electrode layer is a conductive silver wire.

[0054] Example 3

[0055] A preparation method of an optoelectronic coupling type LSPR variable infrared emissivity device includes the following steps:

[0056] (1) Preparation of zinc oxide nanocrystals doped with aluminum

[0057] Dissolve zinc acetate (15.2 mmol) and aluminum acetylacetonate (0.8 mmol) in 32 mL of oleic acid. Degas at 110 °C for 1 hour, then add 16 mL of oleylamine and further degas at this temperature for 15 minutes to obtain a metal precursor. Excess oleyl alcohol (160 mL) is heated to 280 °C with strong stirring in a 250-mL three-necked round-bottom flask. Slowly add 45 mL (15 mmol) of the metal precursor using a syringe pump at an injection rate of 3 mL / min. At the same time, fill with nitrogen at a nitrogen flow rate of 20 L / h to facilitate the removal of the formed excess water vapor. After reacting for 1 h, nanocrystals are obtained. After washing the nanocrystals with a toluene / ethanol solution, disperse the nanocrystals in a toluene solvent to obtain a triangular prism-shaped zinc oxide nanocrystals doped with aluminum dispersion.

[0058] (2) Select a rigid copper plate conductive base layer material with a thickness of 1 mm, and use an electron beam evaporation coating machine to evaporate about 200 nm of CuGaO2 and doped NiO x onto the conductive base layer as the hole layer.

[0059] (3) Spin-coat the aluminum-doped zinc oxide nanocrystal dispersion prepared in (1) on the hole, with a spin-coating speed of 400 rpm for 60 s, followed by 2000 rpm for 20 s. Repeat the above spin-coating process until the film thickness reaches 3 μm.

[0060] (4) Use an electron beam evaporation coating machine to evaporate Ir metal with a thickness of about 3 nm onto the AZO nanocrystal layer at a deposition rate of 1 A / s as an infrared transparent electrode layer. Use transparent double-sided tape to tightly paste 0.1 mm silver wires to the ultra-thin metal film of Ir metal and the conductive base layer respectively, so that the silver wires are in full contact with the ultra-thin metal film of Ir metal and the conductive base layer respectively, ensuring good conductivity.

[0061] The structure of the optoelectronic coupling type LSPR variable infrared emissivity device prepared in this embodiment is as Figure 1 shown, where the conductive base layer is a rigid copper plate. The hole layer is a 200 nm CuGaO2 thin film. The AZO nanocrystal layer is 3 μm. The infrared transparent electrode layer is a 3 nm ultra-thin Ir metal.

[0062] Performance detection

[0063] (1) Infrared spectrum detection of the optoelectronic coupling type LSPR variable infrared emissivity device

[0064] Detect the infrared spectrum of the optoelectronic coupling type LSPR variable infrared emissivity device prepared in Example 1. The detection mechanism is that the variable infrared emissivity device injects photoelectrons into the aluminum-doped zinc oxide nanocrystal layer through ultraviolet light excitation, and the variable infrared emissivity device changes to a high infrared emissivity state. By applying a positive voltage to the aluminum-doped zinc oxide nanocrystal layer, the variable infrared emissivity device changes to a low infrared emissivity state. The detection method is as follows: Use a Fourier transform infrared spectrometer (FTIR) to test the infrared spectrum of the optoelectronic coupling type LSPR variable infrared emissivity device. The detection results are as Figure 2 shown, where the dark line (lower part) is +2.5 V, and the light line (upper part) is ultraviolet light (UV). Use ultraviolet light to excite photoelectrons to inject into the AZO nanocrystals, the LSPR absorption of the AZO nanocrystals is enhanced, and the device changes to a high infrared emissivity state; by applying a positive voltage to the AZO nanocrystals, the photo-generated carriers in the AZO nanocrystals transfer to the hole layer, the carrier concentration in the AZO nanocrystals decreases, the LSPR absorption weakens, and the device changes to a low infrared emissivity state. The emissivity regulation amounts of the device at 3 - 5 μm and 8 - 14 μm are 0.31 and 0.23 respectively.

[0065] (2) Response time detection of the optoelectronic coupling type LSPR variable infrared emissivity device

[0066] The response speed stability of the device during multiple cycles was analyzed by using an electrochemical workstation and an infrared thermal imager in combination. The detection method was to use the infrared thermal imager to record the change in the apparent temperature of the optoelectronic coupling type LSPR variable infrared emissivity device after the application of positive and negative voltages. The time taken for the apparent temperature to reach 90% of the maximum apparent temperature after the application of the voltage was defined as the response time of the optoelectronic coupling type LSPR variable infrared emissivity device. The detection results are as Figure 3 shown, and it can be seen from Figure 3 that the response time of the device is less than 3.79 s.

[0067] The above content is a further detailed description of the present invention in combination with specific preferred embodiments, and it cannot be determined that the specific implementation of the present invention is limited only to these descriptions. For those of ordinary skill in the art to which the present invention pertains, without departing from the concept of the present invention, several simple deductions or substitutions can still be made, and all should be regarded as belonging to the protection scope of the present invention.

Claims

1. A photoelectric coupling type LSPR variable infrared emissivity device, characterized in that, The optoelectronic coupling type LSPR variable infrared emissivity device successively includes a conductive base layer, a hole layer, an aluminum-doped zinc oxide nanocrystal layer, and an infrared transparent electrode layer from bottom to top. The infrared transparent electrode layer and the conductive base layer are respectively connected to the positive and negative electrodes; the infrared transparent electrode layer is made of a material that can transmit ultraviolet light and infrared light; the hole layer is made of a material that can store and transport electrons. The aluminum-doped zinc oxide nanocrystal layer is excited by ultraviolet light to generate photoelectrons. The photoelectrons are injected into the aluminum-doped zinc oxide nanocrystal layer. After applying a positive voltage to the infrared transparent electrode layer, the photoelectrons in the aluminum-doped zinc oxide nanocrystal layer are excited to transfer to the hole layer, and the regulation of the infrared emissivity is realized through electron transfer.

2. The optoelectronic coupling type LSPR variable infrared emissivity device according to claim 1, characterized in that, The material of the hole layer is selected from NiO x , CuGaO2 or a doped material, and the doped material is selected from an inorganic hole transport material doped with NiO x or CuGaO2.

3. The optoelectronic coupling type LSPR variable infrared emissivity device according to claim 1, characterized in that, The infrared light transmittance of the infrared transparent electrode layer is greater than 60%, and the ultraviolet light transmittance of the infrared transparent electrode layer is greater than 60%.

4. The optoelectronic coupling type LSPR variable infrared emissivity device according to claim 1, characterized in that, The material of the infrared transparent electrode layer is selected from one of a metal grid, a conductive silver wire, a multi-layer graphene, or a metal with a thickness less than 10 nm.

5. The optoelectronic coupling type LSPR variable infrared emissivity device according to claim 1, wherein The material of the conductive base layer is selected from one of a rigid aluminum plate, a rigid copper plate, a flexible aluminum foil, and a PET film sputtered with ITO.

6. The optoelectronic coupling type LSPR variable infrared emissivity device according to claim 1, characterized in that, The diameter of the aluminum-doped zinc oxide nanocrystal layer is 2-20 nm, and the morphology is one of a spherical shape, a triangular prism shape, and a square shape.

7. The optoelectronic coupling type LSPR variable infrared emissivity device according to claim 1, characterized in that, The thickness of the aluminum-doped zinc oxide nanocrystals in the aluminum-doped zinc oxide nanocrystal layer is 0.1-10 μm.

8. The preparation method of the optoelectronic coupling type LSPR variable infrared emissivity device according to any one of claims 1-7, characterized in that, It includes the following steps: S1. Select the material of the conductive base layer, lead out the electrode wire from the conductive base layer, and then fix the hole layer material onto the conductive base layer to obtain the hole layer. S2. Fix the aluminum-doped zinc oxide nanocrystals onto the hole layer material in step S1 to obtain the aluminum-doped zinc oxide nanocrystal layer. S3. Fix the infrared transparent electrode layer material onto the aluminum-doped zinc oxide nanocrystal layer in step S2, and lead out the electrode lead from the infrared transparent electrode layer to obtain the optoelectronic coupling type LSPR variable infrared emissivity device.

9. The application of the optoelectronic coupling type LSPR variable infrared emissivity device according to any one of claims 1-7 in the field of infrared dynamic camouflage.

10. The application according to claim 9, wherein The method of the application is as follows: Ultraviolet light irradiates the aluminum-doped zinc oxide nanocrystal layer to generate photoelectrons, and the photoelectrons are injected into the aluminum-doped zinc oxide nanocrystal layer, so that the optoelectronic coupling type LSPR variable infrared emissivity device is transformed into a high infrared emissivity state; after applying a positive voltage to the infrared transparent electrode layer, the transfer of photoelectrons in the aluminum-doped zinc oxide nanocrystal layer is excited, so that the optoelectronic coupling type LSPR variable infrared emissivity device is transformed into a low infrared emissivity state.

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