Low-temperature-drift segmented temperature compensation band-gap reference circuit, chip and control device

Abstract

The invention discloses a low-temperature-drift segmented temperature compensation band-gap reference circuit in the technical field of circuit design, which comprises a first-order temperature compensation module, a segmented temperature compensation module and a high-temperature trimming module, and is characterized in that the first-order temperature compensation module is used for generating reference voltage according to temperature characteristics of a triode; the output end of the segmented temperature compensation module is connected with the first-order temperature compensation module, and the segmented temperature compensation module is used for superposing the generated compensation current onto the first-order temperature compensation module so as to reduce the temperature drift of the reference voltage; and the output end of the high-temperature trimming module is connected with the input end of the segmented temperature compensation module. On the basis of the segmented temperature compensation module of the first-order compensation band-gap reference circuit, temperature correction is carried out on part of high-temperature segment compensation current of the segmented temperature compensation module, the problem of excessive compensation of the high-temperature segment can be effectively solved, the high-precision temperature range of the band-gap reference is widened, and a lower temperature drift coefficient is achieved.

Description

Technical Field

[0001] The present invention relates to the technical field of circuit design, and in particular to a low-temperature drift segmented temperature compensation bandgap reference circuit, a chip and a control device. Background Art

[0002] As an important part of the integrated circuit system, the bandgap reference circuit can provide a reference voltage, and its accuracy and temperature characteristics will directly affect the performance of the entire circuit system. Among them, the principle of compensation of the ordinary bandgap reference circuit is to eliminate it through first-order compensation, that is, by adding the difference between the bandgap voltages of the two transistors and the bandgap voltage of the transistor in a specific ratio, eliminating the first-order temperature term, and approximately obtaining a bandgap reference voltage that is independent of temperature.

[0003] Although the first-order compensated bandgap reference circuit can provide a reference voltage that remains basically unchanged with temperature changes, for some high-precision circuit systems, for example, for high-precision ADCs, the temperature characteristics are far from sufficient to meet the requirements because the medium-temperature terms cannot be compensated. On the other hand, the existing segmented temperature compensation methods mostly use the current in the high-temperature segment that is exponentially related to the temperature for compensation. Therefore, when high-order compensation is performed in the high-temperature segment, over-compensation will occur. If the compensation current is simply reduced proportionally, the compensation effect in the medium and high temperature segments will be reduced. Summary of the invention

[0004] The purpose of the present invention is to provide a low-temperature drift segmented temperature compensation bandgap reference circuit, chip and control device. By performing temperature correction on the compensation current of part of the high-temperature segment of the segmented temperature compensation module on the basis of the segmented temperature compensation module of the first-order compensation bandgap reference circuit, the problem of over-compensation in the high-temperature segment can be effectively solved, the high-precision temperature range of the bandgap reference is widened, and a lower temperature drift coefficient is achieved.

[0005] To achieve the above object, the present invention provides the following technical solutions: A low-temperature drift segmented temperature compensation bandgap reference circuit, comprising a first-order temperature compensation module, a segmented temperature compensation module and a high-temperature adjustment module, wherein the first-order temperature compensation module is used to generate a reference voltage according to the temperature characteristics of a triode; The output end of the segmented temperature compensation module is connected to the first-order temperature compensation module, and the segmented temperature compensation module is used to superimpose the generated compensation current on the first-order temperature compensation module to reduce the temperature drift of the reference voltage; The output end of the high temperature adjustment module is connected to the input end of the segmented temperature compensation module. The high temperature adjustment module is used to generate a reverse compensation current containing a quadratic term, a logarithmic term and a linear term in the high temperature segment to reduce the slope of the compensation current in the high temperature segment of the segmented temperature compensation module. The high temperature adjustment module includes a first current generating circuit, a second current generating circuit, a third current generating circuit and a fourth current generating circuit.

[0006] As a further solution of the present invention: the first-order temperature compensation module includes a first resistor R1 and a second resistor R2, the first end of the first resistor R1 and the first end of the second resistor R2 are both connected to a high level, the first end of the first resistor R1 is connected to the first end of the second resistor R2, the second end of the first resistor R1 is connected to the positive input end of the first differential amplifier AMP1, the positive input end of the first differential amplifier AMP1 is electrically connected to the drain of the first transistor M1, the source of the first transistor M1 is connected to the collector of the first triode Q1, the emitter of the first triode Q1 is connected to the first end of the third resistor R3, the second end of the third resistor R3 is connected to the emitter of the second triode Q2, the emitter of the second triode Q2 is connected to the first end of the fourth resistor R4, the second end of the fourth resistor R4 is connected to the first end of the fifth resistor R5, the second end of the fifth resistor R5 is grounded, and the gate of the second triode Q2 is connected to the first end of the sixth resistor R6 end, a first end of a sixth resistor R6 is connected to a first end of a seventh resistor R7, a second end of the seventh resistor R7 is connected to a first end of an eighth resistor R8, a second end of the eighth resistor R8 is connected to a first end of a ninth resistor R9, a second end of the ninth resistor R9 is connected to a second end of the sixth resistor R6, a collector of a second triode Q2 is connected to a source of a second transistor M2, a drain of the second transistor M2 is connected to a second end of the second resistor R2, a second end of the sixth resistor R6 is grounded, a second end of the second resistor R2 is connected to a negative input end of a first differential amplifier AMP1, an output end of the first differential amplifier AMP1 is connected to a gate of a third transistor M3, a source of the third transistor M3 is connected to a first end of the second resistor R2, a drain of the third transistor M3 is connected to a source of a fourth transistor M4, a drain of the fourth transistor M4 is connected to a gate of the second triode Q2, and a gate of the fourth transistor M4 is connected to a bias voltage Vbias; The gate of the first transistor M1 and the gate of the second transistor M2 are both connected to a bias voltage Vbias, so as to improve the power supply rejection ratio of the bandgap reference circuit.

[0007] As a further solution of the present invention: the resistance of the first resistor R1 is equal to the resistance of the second resistor R2, the first transistor M1 and the second transistor M2 have the same size, and the area ratio of the emitter of the first transistor Q1 to the emitter of the second transistor Q2 is 8:1.

[0008] As a further solution of the present invention: the bandgap reference voltage output of the first-order temperature compensation module is: , In the formula, △VBE is the voltage difference between the base and the emitter of the first transistor Q1 and the second transistor Q2, R3 is the resistance value of the third resistor R3, R4 is the resistance value of the fourth resistor R4, R5 is the resistance value of the fifth resistor R5, and VBE is the voltage between the base and the emitter of the second transistor Q2.

[0009] As a further solution of the present invention: the seventh resistor R7, the eighth resistor R8 and the ninth resistor R9 constitute a voltage-dividing resistor unit, which is used to divide the bandgap reference voltage by resistors and output the divided bandgap reference voltage to the segmented temperature compensation module.

[0010] As a further solution of the present invention: the third transistor M3 and the fourth transistor M4 form a group of cascode structures, the gates of the third transistor M3 and the fourth transistor M4 are connected to several groups of cascode structures, and the cascode structures are used to generate a reference current.

[0011] As a further solution of the present invention: the segmented temperature compensation module includes a current source, a current replication unit and a reference voltage compensation unit, the output end of the current source is connected to the input end of the current replication unit, the current replication unit is used to replicate the output current of the current source, and the reference voltage compensation unit is used to compensate for part of the reference voltage of the first-order temperature compensation module.

[0012] As a further solution of the present invention: the current source includes a second differential amplifier AMP2, a fifth transistor M5, a sixth transistor M6 and a tenth resistor R10, the positive input terminal of the second differential amplifier AMP2 is connected to the bandgap reference voltage Vref, the negative input terminal of the second differential amplifier AMP2 is connected to the first end of the tenth resistor R10, the output terminal of the second differential amplifier AMP2 is connected to the gate of the fifth transistor M5, the drain of the fifth transistor M5 is connected to the source of the sixth transistor M6, and the drain of the sixth transistor M6 is connected to the negative input terminal of the second differential amplifier AMP2.

[0013] As a further solution of the present invention: the current copy unit includes a seventh transistor M7, an eighth transistor M8, a ninth transistor M9 and a tenth transistor M10, the source of the seventh transistor M7 is connected to the source of the fifth transistor M5, the drain of the seventh transistor M7 is connected to the source of the eighth transistor M8, the gate of the eighth transistor M8 is connected to the gate of the sixth transistor M6, the source of the ninth transistor M9 is connected to the source of the seventh transistor M7, the drain of the ninth transistor M9 is connected to the source of the tenth transistor M10, and the gate of the tenth transistor M10 is connected to the gate of the eighth transistor M8.

[0014] As a further solution of the present invention: the reference voltage compensation unit includes an eleventh transistor M11, a twelfth transistor M12, a thirteenth transistor M13 and a fourteenth transistor M14, the source of the eleventh transistor M11 is connected to the source of the twelfth transistor M12, the source of the twelfth transistor M12 is connected to the drain of the eighth transistor M8, the drain of the eleventh transistor M11 is connected to the second end of the tenth resistor R10, the drain of the twelfth transistor M12 is connected to the drain of the fourteenth transistor M14, the source of the fourteenth transistor M14 is connected to the source of the thirteenth transistor M13, the drain of the thirteenth transistor M13 is connected to the second end of the tenth resistor R10, The drain of the first transistor M11, the gate of the fourteenth transistor M14 and the gate of the eleventh transistor M11 are all connected to the positive temperature coefficient voltage Vptat, the gate of the twelfth transistor M12 is connected to the bandgap reference voltage Vrefx, the gate of the thirteenth transistor M13 is connected to the bandgap reference voltage Vrefy, the eleventh transistor M11 and the twelfth transistor M12 are a first pair of differential pair transistors, the thirteenth transistor M13 and the fourteenth transistor M14 are a second pair of differential pair transistors, and the eleventh transistor M11, the twelfth transistor M12, the thirteenth transistor M13 and the fourteenth transistor M14 all operate in the subthreshold region.

[0015] As a further solution of the present invention: the high temperature adjustment module includes a first current generating circuit, a second current generating circuit, a third current generating circuit and a high temperature section current output circuit; The first current generating circuit is used to generate a current including a quadratic relationship, the current including the quadratic relationship changes with temperature, and the current with the quadratic relationship presents a quadratic relationship with the changing temperature; the second current generating circuit is used to generate a current including a linear relationship, the current including the linear relationship changes with temperature, and the current with the linear relationship presents a linear relationship with the changing temperature; the third current generating circuit is used to generate a current including a linear relationship and a logarithmic relationship, the current including the linear relationship and the logarithmic relationship changes with temperature, and the current with the linear relationship and the logarithmic relationship presents a linear relationship and a logarithmic relationship with the changing temperature; The current containing a quadratic relationship, the current containing a linear relationship and the current containing a logarithmic relationship are proportionally added to obtain an added current. At an over-compensated temperature, the high-temperature section current output circuit subtracts the added current from the current containing a linear relationship to obtain a high-temperature corrected current.

[0016] As a further solution of the present invention: the first current generating circuit includes a fifteenth transistor M15, the drain of the fifteenth transistor M15 is connected to the drain of the sixteenth transistor M16, the source of the fifteenth transistor M15 is connected to the source of the seventeenth transistor M17, the gate of the fifteenth transistor M15 is connected to the gate of the seventeenth transistor M17, the drain of the seventeenth transistor M17 is connected to the drain of the eighteenth transistor M18, the source of the eighteenth transistor M18 is connected to the gate of the sixteenth transistor M16, the source of the sixteenth transistor M16 is connected to the source of the nineteenth transistor M19, and the gate of the fifteenth transistor M15 is connected to the gate of the seventeenth transistor M17. The source of the ninth transistor M19 is grounded, the gate of the nineteenth transistor M19 is connected to the gate of the sixteenth transistor M16, the drain of the nineteenth transistor M19 is connected to the source of the eighteenth transistor M18, the gate of the eighteenth transistor M18 is connected to the gate of the twenty-first transistor M21, the drain of the twenty-first transistor M21 is connected to the drain of the twentieth transistor M20, the drain of the twentieth transistor M20 is connected to the gate of the twenty-first transistor M21, the source of the twenty-first transistor M21 is grounded, the gate of the twentieth transistor M20 is connected to the gate of the seventeenth transistor M17, and the gate of the twenty-first transistor M21 is connected to the gate of the twenty-first transistor M21. The source of the transistor M20 is connected to a high level, the source of the twentieth transistor M20 is connected to the source of the twenty-second transistor M22, the gate of the twenty-second transistor M22 is connected to the gate of the twentieth transistor M20, the drain of the twenty-second transistor M22 is connected to the drain of the twenty-third transistor M23, the drain of the twenty-third transistor M23 is connected to the gate of the twenty-third transistor M23, the gate of the twenty-third transistor M23 is connected to the drain of the twenty-second transistor M22, the gate of the twenty-third transistor M23 is connected to the gate of the twenty-fourth transistor M24, and the gate of the twenty-fourth transistor M24 is connected to the drain of the twenty-second transistor M22. The source is connected to the source of the twenty-third transistor M23, the source of the twenty-third transistor M23 is grounded, the drain of the twenty-fourth transistor M24 is connected to the output end of the bias current source Ibias, the output end of the bias current source Ibias is connected to the drain of the twenty-fifth transistor M25, the drain of the twenty-fifth transistor M25 is connected to the gate of the twenty-fifth transistor M25, the gate of the twenty-fifth transistor M25 is connected to the gate of the twenty-sixth transistor M26, the source of the twenty-sixth transistor M26 is connected to the source of the twenty-fifth transistor M25, and the source of the twenty-fifth transistor M25 is grounded; The fifteenth transistor M15, the seventeenth transistor M17 and the twentieth transistor M20 have the same size, and the eighteenth transistor M18 and the twenty-first transistor M21 operate in the subthreshold region.

[0017] As a further solution of the present invention: the second current generating circuit includes a twenty-seventh transistor M27, the source of the twenty-seventh transistor M27 is connected to the source of the twenty-second transistor M22, the drain of the twenty-seventh transistor M27 is connected to the drain of the twenty-eighth transistor M28, the drain of the twenty-eighth transistor M28 is connected to the gate of the twenty-seventh transistor M27, the gate of the twenty-eighth transistor M28 is connected to the bias voltage Vbias, the source of the twenty-eighth transistor M28 is connected to the collector of the third transistor Q3, the base of the third transistor Q3 is connected to the reference voltage Vbg, the emitter of the third transistor Q3 is connected to the first end of the eleventh resistor R11, and the second end of the eleventh resistor R11 is connected to the source of the twenty-sixth transistor M26.

[0018] As a further solution of the present invention: the third current generating circuit includes a twenty-ninth transistor M29, the gate of the twenty-ninth transistor M29 is connected to the gate of the twenty-seventh transistor M27, the source of the twenty-ninth transistor M29 is connected to the source of the twenty-seventh transistor M27, the drain of the twenty-ninth transistor M29 is connected to the collector of the fourth transistor Q4, the emitter of the fourth transistor Q4 is connected to the second end of the eleventh resistor R11, the base of the fourth transistor Q4 is connected to the source of the thirty-first transistor M31, the gate of the thirty-first transistor M31 is connected to the drain of the twenty-ninth transistor M29, the drain of the thirty-first transistor M31 is connected to the drain of the thirtieth transistor M30, the drain of the thirtieth transistor M30 is connected to the gate of the thirtieth transistor M30, and the gate of the thirtieth transistor M30 is connected to the thirty-second transistor M32. The gate of the thirty-second transistor M32 is connected to the source of the thirtieth transistor M30, the source of the thirty-first transistor M31 is connected to the first end of the twelfth resistor R12, the second end of the twelfth resistor R12 is connected to the emitter of the fourth transistor Q4, the second end of the twelfth resistor R12 is connected to the source of the thirty-third transistor M33, the drain of the thirty-third transistor M33 is connected to the drain of the thirty-second transistor M32, the gate of the thirty-third transistor M33 is connected to the drain of the thirty-third transistor M33, the drain current of the thirty-third transistor M33 is the current I3, the gate of the thirty-third transistor M33 is connected to the gate of the thirty-fourth transistor M34, the drain of the thirty-fourth transistor M34 is connected to the drain of the twenty-sixth transistor M26, and the source of the thirty-fourth transistor M34 is connected to the source of the thirty-third transistor M33.

[0019] As a further solution of the present invention: the high temperature section current output circuit includes a thirty-fifth transistor M35, the source of the thirty-fifth transistor M35 is connected to the source of the thirty-second transistor M32, the gate of the thirty-fifth transistor M35 is connected to the gate of the twenty-ninth transistor M29, the drain of the thirty-fifth transistor M35 is connected to the drain of the thirty-sixth transistor M36, the drain of the thirty-sixth transistor M36 is connected to the gate of the thirty-sixth transistor M36, the source of the thirty-sixth transistor M36 is connected to the source of the thirty-seventh transistor M37, the source of the thirty-seventh transistor M37 is connected to the source of the thirty-fourth transistor M34, the drain of the thirty-seventh transistor M37 is connected to the adjustment current, and the gate of the thirty-seventh transistor M37 is connected to the gate of the thirty-sixth transistor M36.

[0020] In a second aspect, a chip is provided, comprising the low-temperature drift segmented temperature compensation bandgap reference circuit as described in the above scheme.

[0021] In a third aspect, a control device is provided, including the low-temperature drift segmented temperature compensation bandgap reference circuit as described in the above scheme.

[0022] Compared with the prior art, the present invention has the following beneficial effects: 1. In the present invention, by performing temperature correction on the compensation current of part of the high-temperature section of the segmented temperature compensation module based on the segmented temperature compensation module of the first-order compensation bandgap reference circuit, the problem of over-compensation in the high-temperature section can be effectively solved, the high-precision temperature range of the bandgap reference is widened, and a lower temperature drift coefficient is achieved.

[0023] 2. In the present invention, a reverse compensation current containing quadratic terms, logarithmic terms and linear terms is generated in the high temperature section by the high temperature adjustment module, which can reduce the slope of the compensation current in the high temperature section of the segmented temperature compensation module. On the other hand, by proportionally adjusting the current slope, the adjustment accuracy of the current slope can be higher, which is beneficial to further improve the temperature compensation effect, avoid reducing the compensation current of the medium and high temperature sections in the process of reducing the compensation current of the high temperature section, and prevent weakening the compensation effect of the medium and high temperature sections.

[0024] 3. In the present invention, by modifying the parameters of the high-temperature adjustment module, the effect of the segmented temperature compensation module can be adjusted to achieve adaptability to different process platforms and designs. At the same time, based on the improvement of the traditional segmented temperature bandgap reference, the structure is simple and easy to implement in integrated circuits. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 This is a diagram of the low-temperature drift segmented temperature compensation bandgap reference structure of the present invention; Figure 2 A circuit diagram of a segmented temperature compensation module of the present invention; Figure 3A circuit diagram of a high temperature trimming module of the present invention; Figure 4 It is a schematic diagram of the output voltage of the low-temperature drift segmented temperature compensation bandgap reference circuit of the present invention.

[0026] In the figure: 1. First-order temperature compensation module; 2. Segmented temperature compensation module; 3. High-temperature adjustment module; 301. First current generating circuit; 302. Second current generating circuit; 303. Third current generating circuit; 304. Fourth current generating circuit. DETAILED DESCRIPTION

[0027] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0028] Example: See also Figure 1-Figure 4 In an embodiment of the present invention, a low-temperature drift segmented temperature compensation bandgap reference circuit includes a first-order temperature compensation module 1, a segmented temperature compensation module 2 and a high-temperature adjustment module 3. The first-order temperature compensation module 1 is used to generate a reference voltage according to the temperature characteristics of the transistor. The temperature characteristics of the transistor are the negative temperature characteristics of the transistor reference voltage in the first-order temperature compensation module 1 and the positive temperature characteristics of the difference between the two transistor reference voltages; the output end of the segmented temperature compensation module 2 is connected to the first-order temperature compensation module 1, and the segmented temperature compensation module 2 is used to superimpose the generated compensation current on the first-order temperature compensation module 1 to reduce the temperature drift of the reference voltage. The compensation current is at low temperature. The slope of the compensation current in the high temperature segment decreases with the increase of temperature, and increases with the increase of temperature in the high temperature segment; the output end of the high temperature adjustment module 3 is connected to the input end of the segmented temperature compensation module 2, and the high temperature adjustment module 3 is used to generate a reverse compensation current containing quadratic terms, logarithmic terms and linear terms in the high temperature segment to reduce the slope of the compensation current in the high temperature segment of the segmented temperature compensation module 2. The high temperature adjustment module 3 includes a first current generating circuit 301, a second current generating circuit 302, a third current generating circuit 303 and a fourth current generating circuit 304. By adjusting the current slope proportionally, the adjustment accuracy of the current slope can be higher, which is conducive to further improving the temperature compensation effect.

[0029] Preferably, the first-order temperature compensation module 1 includes a first resistor R1 and a second resistor R2, the first end of the first resistor R1 and the first end of the second resistor R2 are both connected to a high level, the first end of the first resistor R1 is connected to the first end of the second resistor R2, the second end of the first resistor R1 is connected to the positive input end of the first differential amplifier AMP1, the positive input end of the first differential amplifier AMP1 is electrically connected to the drain of the first transistor M1, the source of the first transistor M1 is connected to the collector of the first triode Q1, the emitter of the first triode Q1 is connected to the first end of the third resistor R3, the second end of the third resistor R3 is connected to the emitter of the second triode Q2, the emitter of the second triode Q2 is connected to the first end of the fourth resistor R4, the second end of the fourth resistor R4 is connected to the first end of the fifth resistor R5, the second end of the fifth resistor R5 is grounded, the gate of the second triode Q2 is connected to the first end of the sixth resistor R6, and the sixth triode is connected to the collector of the first transistor M1. The first end of the resistor R6 is connected to the first end of the seventh resistor R7, the second end of the seventh resistor R7 is connected to the first end of the eighth resistor R8, the second end of the eighth resistor R8 is connected to the first end of the ninth resistor R9, the second end of the ninth resistor R9 is connected to the second end of the sixth resistor R6, the collector of the second triode Q2 is connected to the source of the second transistor M2, the drain of the second transistor M2 is connected to the second end of the second resistor R2, the second end of the sixth resistor R6 is grounded, the second end of the second resistor R2 is connected to the negative input end of the first differential amplifier AMP1, the output end of the first differential amplifier AMP1 is connected to the gate of the third transistor M3, the source of the third transistor M3 is connected to the first end of the second resistor R2, the drain of the third transistor M3 is connected to the source of the fourth transistor M4, the drain of the fourth transistor M4 is connected to the gate of the second triode Q2, and the gate of the fourth transistor M4 is connected to the bias voltage Vbias; The gate of the first transistor M1 and the gate of the second transistor M2 are both connected to a bias voltage Vbias, so as to improve the power supply rejection ratio of the bandgap reference circuit.

[0030] The reference voltage is the voltage VBE between the base and emitter of the transistor: , where Vbg0 is the bandgap voltage, Vbg0=1.2V, VBE(T0) is the VBE value at T0 temperature, VBE(T0) is a constant, η is a constant related to the process, and m depends on the transistor collector current; The difference in VBE between the two transistors is △VBE: , where VT is the thermodynamic temperature, k is the Boltzmann constant, q is the electron charge, and the ratio of the emitter area of ​​the first transistor Q1 to the second transistor Q2 is N.

[0031] Preferably, the resistance of the first resistor R1 is equal to the resistance of the second resistor R2, the sizes of the first transistor M1 and the second transistor M2 are the same, and the area ratio of the emitter of the first transistor Q1 to the emitter of the second transistor Q2 is 8:1.

[0032] Preferably, the bandgap reference voltage output of the first-order temperature compensation module 1 is: , In the formula, △VBE is the voltage difference between the base and the emitter of the first transistor Q1 and the second transistor Q2, R3 is the resistance value of the third resistor R3, R4 is the resistance value of the fourth resistor R4, R5 is the resistance value of the fifth resistor R5, and VBE is the voltage between the base and the emitter of the second transistor Q2. By adjusting the resistance values ​​of the third resistor R3, the fourth resistor R4 and the fifth resistor R5 to appropriate values, a bandgap reference voltage that hardly changes with temperature can be obtained. The appropriate value is the resistance values ​​of the third resistor R3, the fourth resistor R4 and the fifth resistor R5 when it is measured that the bandgap reference voltage does not change with temperature.

[0033] When the first transistor Q1 and the second transistor Q2 are both NPN transistors, the voltage difference △VBE between the base and the emitter of the first transistor Q1 and the second transistor Q2 is a positive temperature coefficient voltage. When the first transistor Q1 and the second transistor Q2 are both PNP transistors, the voltage difference △VBE between the base and the emitter of the first transistor Q1 and the second transistor Q2 is a positive temperature coefficient voltage.

[0034] Preferably, the seventh resistor R7 , the eighth resistor R8 and the ninth resistor R9 constitute a voltage-dividing resistor unit, which is used to divide the bandgap reference voltage by resistors and output the divided bandgap reference voltage to the segmented temperature compensation module 2 .

[0035] Preferably, the third transistor M3 and the fourth transistor M4 form a group of cascode structures, and the gates of the third transistor M3 and the fourth transistor M4 are connected to a plurality of groups of cascode structures, and the cascode structures are used to generate a reference current Iref: The base currents of the first transistor Q1 and the second transistor Q2 are both set to 0, which is beneficial to improving the negative feedback coefficient and the stability of the system. By adjusting the number of common-source and common-gate structures in the first-order temperature compensation module 1, the effect of outputting the reference current in the required proportion can be achieved.

[0036] Preferably, the segmented temperature compensation module 2 includes a current source 201, a current replication unit 202 and a reference voltage compensation unit 203, the output end of the current source 201 is connected to the input end of the current replication unit 202, the current replication unit 202 is used to replicate the output current of the current source 201, and the reference voltage compensation unit 203 is used to compensate for the reference voltage of the first-order temperature compensation module 1.

[0037] Preferably, the current source 201 includes a second differential amplifier AMP2, a fifth transistor M5, a sixth transistor M6 and a tenth resistor R10, the positive input terminal of the second differential amplifier AMP2 is connected to the bandgap reference voltage Vref, the negative input terminal of the second differential amplifier AMP2 is connected to the first end of the tenth resistor R10, the output terminal of the second differential amplifier AMP2 is connected to the gate of the fifth transistor M5, the drain of the fifth transistor M5 is connected to the source of the sixth transistor M6, and the drain of the sixth transistor M6 is connected to the negative input terminal of the second differential amplifier AMP2.

[0038] Preferably, the current copy unit 202 includes a seventh transistor M7, an eighth transistor M8, a ninth transistor M9 and a tenth transistor M10, the source of the seventh transistor M7 is connected to the source of the fifth transistor M5, the drain of the seventh transistor M7 is connected to the source of the eighth transistor M8, the gate of the eighth transistor M8 is connected to the gate of the sixth transistor M6, the source of the ninth transistor M9 is connected to the source of the seventh transistor M7, the drain of the ninth transistor M9 is connected to the source of the tenth transistor M10, and the gate of the tenth transistor M10 is connected to the gate of the eighth transistor M8.

[0039] Preferably, the reference voltage compensation unit 203 includes an eleventh transistor M11, a twelfth transistor M12, a thirteenth transistor M13 and a fourteenth transistor M14, the source of the eleventh transistor M11 is connected to the source of the twelfth transistor M12, the source of the twelfth transistor M12 is connected to the drain of the eighth transistor M8, the drain of the eleventh transistor M11 is connected to the second end of the tenth resistor R10, the drain of the twelfth transistor M12 is connected to the drain of the fourteenth transistor M14, the source of the fourteenth transistor M14 is connected to the source of the thirteenth transistor M13, the drain of the thirteenth transistor M13 is connected to the drain of the eleventh transistor M11, and the fourteenth transistor The gate of M14 and the gate of the eleventh transistor M11 are both connected to the positive temperature coefficient voltage Vptat, the gate of the twelfth transistor M12 is connected to the bandgap reference voltage Vrefx, the gate of the thirteenth transistor M13 is connected to the bandgap reference voltage Vrefy, the eleventh transistor M11 and the twelfth transistor M12 are a first pair of differential pair transistors, the thirteenth transistor M13 and the fourteenth transistor M14 are a second pair of differential pair transistors, the eleventh transistor M11, the twelfth transistor M12, the thirteenth transistor M13 and the fourteenth transistor M14 all work in the subthreshold region, and at room temperature, the magnitude relationship between Vrefx, Vrefy and Vptat is: ; The drain of the twelfth transistor M12 generates a compensation current Icomp1 in a high temperature section, and the drain of the fourteenth transistor M14 generates a compensation current Icomp2 in a low temperature section. The total compensation current Icomp is the sum of the compensation current Icomp1 and the compensation current Icomp2 in the low temperature section, that is: .

[0040] For the first differential pair of transistors or the second differential pair of transistors, if ,but , then the tail current source provides current that flows into the branch where the eleventh transistor M11 is located, that is: , The current formula of a transistor working in the subthreshold region can be expressed as: , where η is the subthreshold slope factor, I0 is the subthreshold current pre-exponential factor, so: , , The trend of Icomp1 changing with temperature is not easy to see, so we can transform it. Let Vptat = aT + b, a and b are constants, so: , Since Vrefx > Vptat, then b - Vrefx < 0, so Icomp1 increases with the increase of temperature.

[0041] It should be noted that the formula holds only when Vptat is close to Vrefx, that is, in the high-temperature section. So in the full temperature range: , Therefore, the overall trend of the change of Icomp1 with temperature can be obtained: in the normal and low-temperature sections, that is, T < T2, Icomp1 is approximately equal to 0; in the high-temperature section, that is, T > T2, Icomp1 increases with the increase of temperature. Similarly, it can be known that: , For the design of Vrefy, in the low-temperature section, Vrefy > Vptat, and in the normal and high-temperature sections, Vrefy < Vptat. So in the low-temperature section, Vrefy - b > 0, so Icomp2 decreases with the increase of temperature. Therefore, the overall trend of the change of Icomp2 with temperature can be obtained: in the low-temperature section, that is, T < T1, Icomp2 decreases with the increase of temperature; in the normal and high-temperature sections, that is, T > T1, Icomp2 is approximately equal to 0. That is: , The overall trend of the change of Icomp with temperature: it decreases with the increase of temperature in the low-temperature section, remains unchanged at normal temperature, and increases with the increase of temperature in the high-temperature section, so as to compensate for the reference voltage Vbg of the first-order bandgap reference output image being a parabola opening downward, greatly reducing the temperature drift of the reference voltage output by the bandgap reference.

[0042] It should be noted that: for the traditional segmented temperature compensation bandgap reference, because the compensation current has an exponential relationship with temperature, there will be an over-compensation situation in the high-temperature section. Assuming that when the temperature T > T3 (T3 > T2), there is an over-compensation situation. If the magnitude of the compensation current is simply reduced in proportion, that is, the Ip in the above formula is reduced in proportion to reduce the magnitude of the compensation current, although the compensation current in the high-temperature section T > T3 can be reduced, but at the same time, the compensation current in the medium-high temperature section T2 < T < T3 is also reduced, weakening the compensation effect in the medium-high temperature section without over-compensation. This problem can be solved by the high-temperature trimming module 3 in the present invention.

[0043] Preferably, the high-temperature trimming module 3 includes a first current generation circuit 301, a second current generation circuit 302, a third current generation circuit 303, and a high-temperature section current output circuit 304; The first current generating circuit 301 is used to generate a current including a quadratic relationship, the current including the quadratic relationship changes with temperature, and the current with the quadratic relationship presents a quadratic relationship with the changing temperature; the second current generating circuit 302 is used to generate a current including a linear relationship, the current including the linear relationship changes with temperature, and the current with the linear relationship presents a linear relationship with the changing temperature; the third current generating circuit 303 is used to generate a current including a linear relationship and a logarithmic relationship, the current including the linear relationship and the logarithmic relationship changes with temperature, and the current with the linear relationship and the logarithmic relationship presents a linear relationship and a logarithmic relationship with the changing temperature; The current containing a quadratic relationship, the current containing a linear relationship and the current containing a logarithmic relationship are proportionally added to obtain an added current. At the over-compensated temperature, the high-temperature segment current output circuit 304 subtracts the added current from the current containing a linear relationship to obtain a high-temperature corrected current.

[0044] Preferably, the first current generating circuit 301 includes a fifteenth transistor M15, the drain of the fifteenth transistor M15 is connected to the drain of the sixteenth transistor M16, the source of the fifteenth transistor M15 is connected to the source of the seventeenth transistor M17, the gate of the fifteenth transistor M15 is connected to the gate of the seventeenth transistor M17, the drain of the seventeenth transistor M17 is connected to the drain of the eighteenth transistor M18, the source of the eighteenth transistor M18 is connected to the gate of the sixteenth transistor M16, the source of the sixteenth transistor M16 is connected to the source of the nineteenth transistor M19, and the nineteenth transistor The source of the nineteenth transistor M19 is grounded, the gate of the nineteenth transistor M19 is connected to the gate of the sixteenth transistor M16, the drain of the nineteenth transistor M19 is connected to the source of the eighteenth transistor M18, the gate of the eighteenth transistor M18 is connected to the gate of the twenty-first transistor M21, the drain of the twenty-first transistor M21 is connected to the drain of the twentieth transistor M20, the drain of the twentieth transistor M20 is connected to the gate of the twenty-first transistor M21, the source of the twenty-first transistor M21 is grounded, the gate of the twentieth transistor M20 is connected to the gate of the seventeenth transistor M17, and the twentieth transistor The source of the twentieth transistor M20 is connected to a high level, the source of the twentieth transistor M20 is connected to the source of the twenty-second transistor M22, the gate of the twenty-second transistor M22 is connected to the gate of the twentieth transistor M20, the drain of the twenty-second transistor M22 is connected to the drain of the twenty-third transistor M23, the drain of the twenty-third transistor M23 is connected to the gate of the twenty-third transistor M23, the gate of the twenty-third transistor M23 is connected to the drain of the twenty-second transistor M22, the gate of the twenty-third transistor M23 is connected to the gate of the twenty-fourth transistor M24, and the source of the twenty-fourth transistor M24 is connected to the gate of the twenty-third transistor M24. The electrode of the twenty-third transistor M23 is connected to the source of the twenty-third transistor M23, the source of the twenty-third transistor M23 is grounded, the drain of the twenty-fourth transistor M24 is connected to the output end of the bias current source Ibias, the output end of the bias current source Ibias is connected to the drain of the twenty-fifth transistor M25, the drain of the twenty-fifth transistor M25 is connected to the gate of the twenty-fifth transistor M25, the gate of the twenty-fifth transistor M25 is connected to the gate of the twenty-sixth transistor M26, the source of the twenty-sixth transistor M26 is connected to the source of the twenty-fifth transistor M25, and the source of the twenty-fifth transistor M25 is grounded; The fifteenth transistor M15, the seventeenth transistor M17 and the twentieth transistor M20 have the same size, the eighteenth transistor M18 and the twenty-first transistor M21 operate in the subthreshold region, the drain current of the eighteenth transistor M18 is the current I1, and the current between the gate and the drain of the twenty-fifth transistor M25 is the current I2; the voltage difference △VGS between the source and the drain of the eighteenth transistor M18 and the twenty-first transistor M21 is similar to the voltage characteristic of △VBE, then; , Wherein, αM18 and αM21 represent the product of the transconductance factor K and the width-to-length ratio W / L of the eighteenth transistor M18 and the twenty-first transistor M21, respectively. Since the nineteenth transistor M19 and the sixteenth transistor M16 both operate in the saturation region, the on-resistance of the nineteenth transistor M19 is: , Bringing it back to the formula of I1, we get: , , It can be seen that I1 is a current that presents a quadratic relationship with temperature changes. In the first current generating circuit 301, the ratio of the size of the 22nd transistor M22 and the 17th transistor M17 is m; the size of the 23rd transistor M23 and the 24th transistor M24 are the same; the size of the 25th transistor M25 and the 26th transistor M26 are the same; Ibias is the reference current. In this example, the reference current output by the bandgap reference is taken out according to the design ratio. Therefore: , That is, I2 is Electric current.

[0045] Preferably, the second current generating circuit 302 includes a twenty-seventh transistor M27, the source of the twenty-seventh transistor M27 is connected to the source of the twenty-second transistor M22, the drain of the twenty-seventh transistor M27 is connected to the drain of the twenty-eighth transistor M28, the drain of the twenty-eighth transistor M28 is connected to the gate of the twenty-seventh transistor M27, the gate of the twenty-eighth transistor M28 is connected to the bias voltage Vbias, the source of the twenty-eighth transistor M28 is connected to the collector of the third transistor Q3, the base of the third transistor Q3 is connected to the reference voltage Vbg, the emitter of the third transistor Q3 is connected to the first end of the eleventh resistor R11, and the second end of the eleventh resistor R11 is connected to the source of the twenty-sixth transistor M26.

[0046] Preferably, the third current generating circuit 303 includes a twenty-ninth transistor M29, the gate of the twenty-ninth transistor M29 is connected to the gate of the twenty-seventh transistor M27, the source of the twenty-ninth transistor M29 is connected to the source of the twenty-seventh transistor M27, the drain of the twenty-ninth transistor M29 is connected to the collector of the fourth transistor Q4, the emitter of the fourth transistor Q4 is connected to the second end of the eleventh resistor R11, the base of the fourth transistor Q4 is connected to the source of the thirty-first transistor M31, the gate of the thirty-first transistor M31 is connected to the drain of the twenty-ninth transistor M29, the drain of the thirty-first transistor M31 is connected to the drain of the thirtieth transistor M30, the drain of the thirtieth transistor M30 is connected to the gate of the thirtieth transistor M30, and the gate of the thirtieth transistor M30 is connected to the gate of the thirty-second transistor M32. The source of the thirty-second transistor M32 is connected to the source of the thirtieth transistor M30, the source of the thirty-first transistor M31 is connected to the first end of the twelfth resistor R12, the second end of the twelfth resistor R12 is connected to the emitter of the fourth triode Q4, the second end of the twelfth resistor R12 is connected to the source of the thirty-third transistor M33, the drain of the thirty-third transistor M33 is connected to the drain of the thirty-second transistor M32, the gate of the thirty-third transistor M33 is connected to the drain of the thirty-third transistor M33, the drain current of the thirty-third transistor M33 is the current I3, the gate of the thirty-third transistor M33 is connected to the gate of the thirty-fourth transistor M34, the drain of the thirty-fourth transistor M34 is connected to the drain of the twenty-sixth transistor M26, and the source of the thirty-fourth transistor M34 is connected to the source of the thirty-third transistor M33.

[0047] The second current generating circuit 302 is a positive temperature coefficient current generating circuit. The base of the third transistor Q3 is connected to the reference voltage Vbg of the bandgap reference output terminal, and the twenty-eighth transistor M28 is connected to the bias voltage. Therefore, the branch current of the second current generating circuit 302 is: , In the third current generating circuit 303 generating a current including a linear relationship and a logarithmic relationship, the 29th transistor M29 and the 27th transistor M27 have the same size, the 30th transistor M30 and the 34th transistor M34 have the same size, and the 33rd transistor M33 and the 34th transistor M34 have the same size, so: , That is, I3 is a current that decreases as the temperature increases and includes a linear term and a logarithmic term.

[0048] Preferably, the high temperature section current output circuit 304 includes a thirty-fifth transistor M35, the source of the thirty-fifth transistor M35 is connected to the source of the thirty-second transistor M32, the gate of the thirty-fifth transistor M35 is connected to the gate of the twenty-ninth transistor M29, the drain of the thirty-fifth transistor M35 is connected to the drain of the thirty-sixth transistor M36, the drain of the thirty-sixth transistor M36 is connected to the gate of the thirty-sixth transistor M36, the source of the thirty-sixth transistor M36 is connected to the source of the thirty-seventh transistor M37, the source of the thirty-seventh transistor M37 is connected to the source of the thirty-fourth transistor M34, the drain of the thirty-seventh transistor M37 is connected to the adjustment current, and the gate of the thirty-seventh transistor M37 is connected to the gate of the thirty-sixth transistor M36.

[0049] In the high temperature current output circuit 304, the ratio of the sizes of the 35th transistor M35 and the 27th transistor M27 is n, so the drain current of the 35th transistor M35 is: , The 36th transistor M36 and the 37th transistor M37 have the same size. Assuming that the temperature when the high temperature overcompensation occurs is T3, it is set that when the temperature is less than T3, , if the twenty-sixth transistor M26 and the thirty-fourth transistor M34 operate in the saturation region, then: , but according to Kirchhoff's current law, this is obviously incorrect. Therefore, the 26th transistor M26 and the 34th transistor M34 must work in the linear region. At this time, the potential of point c is pulled down, and the 36th transistor M36 and the 37th transistor M37 are turned off. When the temperature is greater than T3, , the twenty-sixth transistor M26 and the thirty-fourth transistor M34 operate in the saturation region, and the thirty-sixth transistor M36 and the thirty-seventh transistor M37 are turned on: , Rearranging the above formula yields: , Where A, B, C and D are simplified coefficients and constants, and are all greater than 0. A, B and C can be adjusted by adjusting the ratio of the size of the nineteenth transistor M19 to the size of the sixteenth transistor M16, the resistance of the twelfth resistor R12 and the resistance of the eleventh resistor R11 to achieve the designed value. Therefore, according to the actual situation of over-compensation at high temperature, the appropriate coefficient can be selected to achieve more accurate correction. For example, when the over-compensation at high temperature is more serious, the circuit parameters are adjusted to make the coefficients A, B, and C larger and the coefficient A the largest; when the over-compensation at high temperature is relatively mild, the circuit parameters are adjusted to make the coefficients A, B, and C smaller and the coefficient A the smallest. According to the simulation results, the temperature at which over-compensation occurs in the high-temperature section of the segmented temperature compensation module is determined to be T3. At the same time, by adjusting the value of n, when T>T2, the compensation current is: , It can be achieved in the medium and high temperature range The compensation effect is not weakened, and the over-compensation current is reduced in the high temperature section, thereby obtaining a bandgap reference voltage with lower temperature drift.

[0050] See also Figure 4 , shows a schematic diagram of a low-temperature drift segmented temperature-compensated bandgap reference output voltage. The high-temperature compensation current correction module of the present invention makes the bandgap reference output voltage no longer rise exponentially in the high-temperature section T>130°C. The design of a bandgap reference with a low-temperature drift of 1ppm / °C in a wide temperature range of -60°C-150°C is realized.

[0051] The implementation scenario of the present invention is that when designing a segmented temperature compensation bandgap reference, there is an over-compensation in the high temperature section. If the designer simply reduces the high temperature compensation current proportionally, although the over-compensation in the high temperature section is improved, the compensation effect in the medium and high temperature sections will be weakened at the same time. In order to meet the design requirements of the low temperature drift of the high-precision bandgap reference, the present invention introduces a current that changes with temperature in a quadratic, logarithmic, and linear relationship in the high temperature section, which only weakens the over-compensation current part of the high temperature section, while keeping the compensation effect in the medium and high temperature sections unchanged.

[0052] can be Figure 1 In summary, the first-order temperature compensation module 1 generates a bandgap reference voltage that is almost independent of temperature. The bandgap reference voltage at this time cannot meet the demand for low temperature drift, so the segmented temperature compensation module 2 is introduced. By introducing a compensation current that decreases with increasing temperature and a compensation current that increases with increasing temperature in the low temperature segment and the high temperature segment respectively, the bandgap reference circuit outputs a reference voltage with a lower temperature drift. However, during segmented temperature compensation, due to the exponential relationship, over-compensation will occur in the high temperature segment. If the high temperature compensation current is simply reduced proportionally, the compensation effect of the medium and high temperature segments will be weakened at the same time. Therefore, the high temperature adjustment module 3 is introduced to introduce a current that changes with temperature and presents a high-order term in the high temperature segment, which only weakens the over-compensation current part of the high temperature segment, while keeping the compensation effect of the medium and high temperature segments unchanged, so that the segmented temperature compensation bandgap reference obtains a lower temperature coefficient and a wider temperature range, thereby meeting the design requirements.

[0053] In a second aspect, the present invention further provides a chip, comprising the low-temperature drift segmented temperature compensation bandgap reference circuit as described in the above scheme.

[0054] In a third aspect, the present invention further provides a control device, comprising a low-temperature drift segmented temperature compensation bandgap reference circuit as described in the above scheme.

[0055] The above are only preferred specific implementation modes of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes according to the technical solutions and inventive concepts of the present invention within the technical scope disclosed by the present invention, which should be covered by the protection scope of the present invention.

Claims

1. A low temperature drift segmented temperature compensation bandgap reference circuit, characterized in that: include: A first-order temperature compensation module, the first-order temperature compensation module is used to generate a reference voltage according to the temperature characteristics of the transistor; A segmented temperature compensation module, wherein the output end of the segmented temperature compensation module is connected to the first-order temperature compensation module, and the segmented temperature compensation module is used to superimpose the generated compensation current on the first-order temperature compensation module to reduce the temperature drift of the reference voltage; A high temperature adjustment module, wherein the output end of the high temperature adjustment module is connected to the input end of the segmented temperature compensation module, and the high temperature adjustment module is used to generate a reverse compensation current containing a quadratic term, a logarithmic term and a linear term in the high temperature segment to reduce the slope of the compensation current in the high temperature segment of the segmented temperature compensation module. The high temperature adjustment module includes a first current generating circuit, a second current generating circuit, a third current generating circuit and a fourth current generating circuit.

2. The low temperature drift segmented temperature compensation bandgap reference circuit according to claim 1, characterized in that: The first-order temperature compensation module includes a first resistor R1 and a second resistor R2, wherein the first end of the first resistor R1 and the first end of the second resistor R2 are both connected to a high level, the first end of the first resistor R1 is connected to the first end of the second resistor R2, the second end of the first resistor R1 is connected to the positive input end of the first differential amplifier AMP1, the positive input end of the first differential amplifier AMP1 is electrically connected to the drain of the first transistor M1, the source of the first transistor M1 is connected to the collector of the first triode Q1, the emitter of the first triode Q1 is connected to the first end of the third resistor R3, the second end of the third resistor R3 is connected to the emitter of the second triode Q2, the emitter of the second triode Q2 is connected to the first end of the fourth resistor R4, the second end of the fourth resistor R4 is connected to the first end of the fifth resistor R5, the second end of the fifth resistor R5 is grounded, the gate of the second triode Q2 is connected to the first end of the sixth resistor R6, and the sixth resistor R7 is electrically connected to the drain of the first transistor M1. The first end of R6 is connected to the first end of the seventh resistor R7, the second end of the seventh resistor R7 is connected to the first end of the eighth resistor R8, the second end of the eighth resistor R8 is connected to the first end of the ninth resistor R9, the second end of the ninth resistor R9 is connected to the second end of the sixth resistor R6, the collector of the second transistor Q2 is connected to the source of the second transistor M2, the drain of the second transistor M2 is connected to the second end of the second resistor R2, the second end of the sixth resistor R6 is grounded, the second end of the second resistor R2 is connected to the negative input end of the first differential amplifier AMP1, the output end of the first differential amplifier AMP1 is connected to the gate of the third transistor M3, the source of the third transistor M3 is connected to the first end of the second resistor R2, the drain of the third transistor M3 is connected to the source of the fourth transistor M4, the drain of the fourth transistor M4 is connected to the gate of the second transistor Q2, and the gate of the fourth transistor M4 is connected to the bias voltage Vbias; The gate of the first transistor M1 and the gate of the second transistor M2 are both connected to a bias voltage Vbias, so as to improve the power supply rejection ratio of the bandgap reference circuit.

3. The low temperature drift segmented temperature compensation bandgap reference circuit according to claim 2, characterized in that: The resistance value of the first resistor R1 is equal to the resistance value of the second resistor R2, the sizes of the first transistor M1 and the second transistor M2 are the same, and the area ratio of the emitter of the first transistor Q1 to the emitter of the second transistor Q2 is 8:

1.

4. The low temperature drift segmented temperature compensation bandgap reference circuit according to claim 3, characterized in that: The bandgap reference voltage output of the first-order temperature compensation module is: ， In the formula, △VBE is the voltage difference between the base and the emitter of the first transistor Q1 and the second transistor Q2, R3 is the resistance value of the third resistor R3, R4 is the resistance value of the fourth resistor R4, R5 is the resistance value of the fifth resistor R5, and VBE is the voltage between the base and the emitter of the second transistor Q2.

5. The low temperature drift segmented temperature compensation bandgap reference circuit according to claim 4, characterized in that: The seventh resistor R7, the eighth resistor R8 and the ninth resistor R9 constitute a voltage-dividing resistor unit, which is used to divide the bandgap reference voltage by resistors and output the divided bandgap reference voltage to the segmented temperature compensation module.

6. The low temperature drift segmented temperature compensation bandgap reference circuit according to claim 5, characterized in that: The third transistor M3 and the fourth transistor M4 form a group of cascode structures. The gates of the third transistor M3 and the fourth transistor M4 are connected to a plurality of groups of cascode structures. The cascode structures are used to generate a reference current.

7. The low temperature drift segmented temperature compensation bandgap reference circuit according to claim 1, characterized in that: The segmented temperature compensation module includes a current source, a current replication unit and a reference voltage compensation unit. The output end of the current source is connected to the input end of the current replication unit. The current replication unit is used to replicate the output current of the current source. The reference voltage compensation unit is used to compensate for the reference voltage of the first-order temperature compensation module.

8. The low temperature drift segmented temperature compensation bandgap reference circuit according to claim 7, characterized in that: The current source includes a second differential amplifier AMP2, a fifth transistor M5, a sixth transistor M6 and a tenth resistor R10, the positive input terminal of the second differential amplifier AMP2 is connected to the bandgap reference voltage Vref, the negative input terminal of the second differential amplifier AMP2 is connected to the first end of the tenth resistor R10, the output terminal of the second differential amplifier AMP2 is connected to the gate of the fifth transistor M5, the drain of the fifth transistor M5 is connected to the source of the sixth transistor M6, and the drain of the sixth transistor M6 is connected to the negative input terminal of the second differential amplifier AMP2.

9. The low temperature drift segmented temperature compensation bandgap reference circuit according to claim 8, characterized in that: The current copy unit includes a seventh transistor M7, an eighth transistor M8, a ninth transistor M9 and a tenth transistor M10, the source of the seventh transistor M7 is connected to the source of the fifth transistor M5, the drain of the seventh transistor M7 is connected to the source of the eighth transistor M8, the gate of the eighth transistor M8 is connected to the gate of the sixth transistor M6, the source of the ninth transistor M9 is connected to the source of the seventh transistor M7, the drain of the ninth transistor M9 is connected to the source of the tenth transistor M10, and the gate of the tenth transistor M10 is connected to the gate of the eighth transistor M8.

10. The low temperature drift segmented temperature compensation bandgap reference circuit according to claim 9, characterized in that: The reference voltage compensation unit includes an eleventh transistor M11, a twelfth transistor M12, a thirteenth transistor M13 and a fourteenth transistor M14, the source of the eleventh transistor M11 is connected to the source of the twelfth transistor M12, the source of the twelfth transistor M12 is connected to the drain of the eighth transistor M8, the drain of the eleventh transistor M11 is connected to the second end of the tenth resistor R10, the drain of the twelfth transistor M12 is connected to the drain of the fourteenth transistor M14, the source of the fourteenth transistor M14 is connected to the source of the thirteenth transistor M13, and the drain of the thirteenth transistor M13 is connected to the eleventh transistor M11. 1, the gate of the fourteenth transistor M14 and the gate of the eleventh transistor M11 are both connected to the positive temperature coefficient voltage Vptat, the gate of the twelfth transistor M12 is connected to the bandgap reference voltage Vrefx, the gate of the thirteenth transistor M13 is connected to the bandgap reference voltage Vrefy, the eleventh transistor M11 and the twelfth transistor M12 are a first pair of differential pair transistors, the thirteenth transistor M13 and the fourteenth transistor M14 are a second pair of differential pair transistors, and the eleventh transistor M11, the twelfth transistor M12, the thirteenth transistor M13 and the fourteenth transistor M14 all operate in the subthreshold region.

11. The low temperature drift segmented temperature compensation bandgap reference circuit according to claim 10, characterized in that: The high temperature trimming module includes a first current generating circuit, a second current generating circuit, a third current generating circuit and a high temperature section current output circuit; The first current generating circuit is used to generate a current having a quadratic relationship, the current having a quadratic relationship varies with temperature, and the current having a quadratic relationship and the varying temperature present a quadratic relationship; The second current generating circuit is used to generate a current including a linear relationship, the current including the linear relationship changes with temperature, and the current including the linear relationship presents a linear relationship with the changing temperature; the third current generating circuit is used to generate a current including a linear relationship and a logarithmic relationship, the current including the linear relationship and the logarithmic relationship changes with temperature, and the current including the linear relationship and the logarithmic relationship presents a linear relationship and a logarithmic relationship with the changing temperature; The current containing a quadratic relationship, the current containing a linear relationship and the current containing a logarithmic relationship are proportionally added to obtain an added current. At the over-compensation temperature, the high-temperature section current output circuit subtracts the added current from the current containing a linear relationship to obtain a high-temperature corrected current.

12. The low temperature drift segmented temperature compensation bandgap reference circuit according to claim 11, characterized in that: The first current generating circuit includes a fifteenth transistor M15, a drain of the fifteenth transistor M15 is connected to the drain of the sixteenth transistor M16, a source of the fifteenth transistor M15 is connected to the source of the seventeenth transistor M17, a gate of the fifteenth transistor M15 is connected to the gate of the seventeenth transistor M17, a drain of the seventeenth transistor M17 is connected to the drain of the eighteenth transistor M18, a source of the eighteenth transistor M18 is connected to the gate of the sixteenth transistor M16, a source of the sixteenth transistor M16 is connected to the source of the nineteenth transistor M19, and a source of the nineteenth transistor M19 is connected to the gate of the eighteenth transistor M18. The gate of the nineteenth transistor M19 is connected to the gate of the sixteenth transistor M16, the drain of the nineteenth transistor M19 is connected to the source of the eighteenth transistor M18, the gate of the eighteenth transistor M18 is connected to the gate of the twenty-first transistor M21, the drain of the twenty-first transistor M21 is connected to the drain of the twentieth transistor M20, the drain of the twentieth transistor M20 is connected to the gate of the twenty-first transistor M21, the source of the twenty-first transistor M21 is grounded, the gate of the twentieth transistor M20 is connected to the gate of the seventeenth transistor M17, and the twentieth transistor M20 is connected to the gate of the twenty-first transistor M21. The source of the twentieth transistor M20 is connected to the source of the twenty-second transistor M22, the gate of the twenty-second transistor M22 is connected to the gate of the twentieth transistor M20, the drain of the twenty-second transistor M22 is connected to the drain of the twenty-third transistor M23, the drain of the twenty-third transistor M23 is connected to the gate of the twenty-third transistor M23, the gate of the twenty-third transistor M23 is connected to the drain of the twenty-second transistor M22, the gate of the twenty-third transistor M23 is connected to the gate of the twenty-fourth transistor M24, and the source of the twenty-fourth transistor M24 is connected to the The source of the twenty-third transistor M23 is connected to the source of the twenty-third transistor M23, the source of the twenty-third transistor M23 is grounded, the drain of the twenty-fourth transistor M24 is connected to the output end of the bias current source Ibias, the output end of the bias current source Ibias is connected to the drain of the twenty-fifth transistor M25, the drain of the twenty-fifth transistor M25 is connected to the gate of the twenty-fifth transistor M25, the gate of the twenty-fifth transistor M25 is connected to the gate of the twenty-sixth transistor M26, the source of the twenty-sixth transistor M26 is connected to the source of the twenty-fifth transistor M25, and the source of the twenty-fifth transistor M25 is grounded; The fifteenth transistor M15, the seventeenth transistor M17 and the twentieth transistor M20 have the same size, and the eighteenth transistor M18 and the twenty-first transistor M21 operate in the subthreshold region.

13. The low temperature drift segmented temperature compensation bandgap reference circuit according to claim 12, characterized in that: The second current generating circuit includes a twenty-seventh transistor M27, a source of the twenty-seventh transistor M27 is connected to the source of the twenty-second transistor M22, a drain of the twenty-seventh transistor M27 is connected to the drain of the twenty-eighth transistor M28, a drain of the twenty-eighth transistor M28 is connected to the gate of the twenty-seventh transistor M27, a gate of the twenty-eighth transistor M28 is connected to the bias voltage Vbias, a source of the twenty-eighth transistor M28 is connected to the collector of the third transistor Q3, a base of the third transistor Q3 is connected to the reference voltage Vbg, an emitter of the third transistor Q3 is connected to the first end of the eleventh resistor R11, and a second end of the eleventh resistor R11 is connected to the source of the twenty-sixth transistor M26.

14. The low temperature drift segmented temperature compensation bandgap reference circuit according to claim 13, characterized in that: The third current generating circuit includes a twenty-ninth transistor M29, the gate of the twenty-ninth transistor M29 is connected to the gate of the twenty-seventh transistor M27, the source of the twenty-ninth transistor M29 is connected to the source of the twenty-seventh transistor M27, the drain of the twenty-ninth transistor M29 is connected to the collector of the fourth transistor Q4, the emitter of the fourth transistor Q4 is connected to the second end of the eleventh resistor R11, the base of the fourth transistor Q4 is connected to the source of the thirty-first transistor M31, the gate of the thirty-first transistor M31 is connected to the drain of the twenty-ninth transistor M29, the drain of the thirty-first transistor M31 is connected to the drain of the thirtieth transistor M30, the drain of the thirtieth transistor M30 is connected to the gate of the thirtieth transistor M30, the gate of the thirtieth transistor M30 is connected to the gate of the thirty-second transistor M32, and the third The source of the twelfth transistor M32 is the source of the thirtieth transistor M30, the source of the thirty-first transistor M31 is connected to the first end of the twelfth resistor R12, the second end of the twelfth resistor R12 is connected to the emitter of the fourth transistor Q4, the second end of the twelfth resistor R12 is connected to the source of the thirty-third transistor M33, the drain of the thirty-third transistor M33 is connected to the drain of the thirty-second transistor M32, the gate of the thirty-third transistor M33 is connected to the drain of the thirty-third transistor M33, the drain current of the thirty-third transistor M33 is the current I3, the gate of the thirty-third transistor M33 is connected to the gate of the thirty-fourth transistor M34, the drain of the thirty-fourth transistor M34 is connected to the drain of the twenty-sixth transistor M26, and the source of the thirty-fourth transistor M34 is connected to the source of the thirty-third transistor M33.

15. The low temperature drift segmented temperature compensation bandgap reference circuit according to claim 14, characterized in that: The high temperature section current output circuit includes a thirty-fifth transistor M35, the source of the thirty-fifth transistor M35 is connected to the source of the thirty-second transistor M32, the gate of the thirty-fifth transistor M35 is connected to the gate of the twenty-ninth transistor M29, the drain of the thirty-fifth transistor M35 is connected to the drain of the thirty-sixth transistor M36, the drain of the thirty-sixth transistor M36 is connected to the gate of the thirty-sixth transistor M36, the source of the thirty-sixth transistor M36 is connected to the source of the thirty-seventh transistor M37, the source of the thirty-seventh transistor M37 is connected to the source of the thirty-fourth transistor M34, the drain of the thirty-seventh transistor M37 is connected to the adjustment current, and the gate of the thirty-seventh transistor M37 is connected to the gate of the thirty-sixth transistor M36.

16. A chip, characterized in that: It comprises the low temperature drift segmented temperature compensation bandgap reference circuit as described in any one of claims 1 to 15.

17. A control device, characterized in that: It comprises the low temperature drift segmented temperature compensation bandgap reference circuit as described in any one of claims 1 to 15.

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