Plasma confinement assembly and plasma processing device

Abstract

The invention provides a plasma confinement assembly and a plasma processing device. The plasma confinement assembly comprises a confinement ring, the confinement ring comprises an upper ring and a lower ring which are stacked, the upper ring is provided with a first exhaust channel, the lower ring is provided with a second exhaust channel, the first exhaust channel is in fluid communication with the second exhaust channel, the upper ring is made of a silicon-containing material, and the lower ring is made of an aluminum alloy material; and the middle grounding ring is arranged below the restraint ring and is electrically connected with the lower ring. The plasma confinement ring is used for solving the problems that the service life of a ceramic coating on the plasma confinement ring is short, the confinement ring needs to be replaced frequently, and the cost is high, and the confinement ring can have large air conductivity.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and in particular to a plasma confinement component and a plasma processing device. Background Art

[0002] When using plasma processing equipment to etch a semiconductor substrate, a plasma confinement ring needs to be arranged around the susceptor, that is, on the exhaust path, so that the plasma in the reaction space reaches electrical neutrality before being pumped to the bottom of the reaction chamber.

[0003] The existing plasma confinement ring is a ring with multiple annular grooves, made of a single aluminum material, and coated with a layer of ceramic material coating on the upper surface. However, under high RF power, the corrosion resistance of the ceramic coating on the upper surface of the existing plasma confinement ring is insufficient, resulting in a seriously insufficient life of the ceramic coating on the plasma confinement ring, and the confinement ring needs to be replaced frequently. Summary of the invention

[0004] The purpose of the present invention is to provide a plasma confinement assembly and a plasma processing device, which are used to solve the problem that the ceramic coating on the plasma confinement ring has an insufficient life and the confinement ring needs to be frequently replaced.

[0005] In order to achieve the above objectives, the present invention is implemented by the following technical solutions:

[0006] A plasma confinement assembly comprising:

[0007] A restraint ring, comprising a stacked upper ring and a lower ring, wherein the upper ring is provided with a first exhaust channel, and the lower ring is provided with a second exhaust channel, wherein the first exhaust channel is fluidically connected to the second exhaust channel, the upper ring is made of a silicon-containing material, and the lower ring is made of an aluminum alloy material;

[0008] The middle grounding ring is arranged below the confinement ring and is electrically connected to the lower ring.

[0009] Optionally, the relative area between the outer upper surface of the lower ring and the outer lower surface of the upper ring is greater than 2.2×10 4 mm 2 And less than 6.8×10 4 mm 2 .

[0010] Optionally, the upper surface of the lower ring includes an anodized layer, and the lower surface is made of bare aluminum.

[0011] Optionally, the thickness of the anodized layer is 40 μm to 70 μm.

[0012] Optionally, the outer upper surface of the lower ring is arranged opposite to the outer lower surface of the upper ring, and the grounding capacitance between the two is greater than 30nF.

[0013] Optionally, a thermally conductive and electrically conductive material is disposed between the outer upper surface of the lower ring and the outer lower surface of the upper ring to ensure uniform contact between the two.

[0014] Optionally, a relative area between an outer upper surface of the lower ring and an outer lower surface of the upper ring is greater than a relative area between an inner upper surface of the lower ring and an inner lower surface of the upper ring.

[0015] Optionally, a thermally conductive and electrically conductive material is provided on the outer upper surface of the grounding ring and the outer lower surface of the lower ring to ensure uniform contact between the two.

[0016] Optionally, the thermally and electrically conductive material is graphite, or a multilayer structure of graphite wrapped in aluminum.

[0017] Optionally, a gas diffusion area is provided between the lower surface of the upper ring and the upper surface of the lower ring, and the gas diffusion area is connected to the first exhaust channel and the second exhaust channel.

[0018] Optionally, the height of the gas diffusion zone is 2 mm to 10 mm.

[0019] Optionally, the air conductivity of the first exhaust channel is greater than the air conductivity of the second exhaust channel.

[0020] Optionally, the first exhaust passage is an annular groove arranged in sequence along the radial direction of the upper ring, or is a radial waist groove arranged in sequence along the circumferential direction of the upper ring.

[0021] Optionally, the second exhaust passage is an annular groove arranged in sequence along the radial direction of the lower ring, or is a radial waist groove arranged in sequence along the circumferential direction of the lower ring.

[0022] Optionally, the intermediate grounding ring is provided with a third exhaust channel, and the third exhaust channel is fluidically connected to the second exhaust channel.

[0023] Optionally, the area of ​​the first exhaust channel occupies 35%-50% of the area of ​​the upper ring, and the area of ​​the second exhaust channel occupies 40%-65% of the area of ​​the lower ring.

[0024] Optionally, a height ratio between the upper ring and the lower ring is 1:1 to 1:1.5.

[0025] Optionally, the upper ring is made of at least one of single crystal silicon, polycrystalline silicon or silicon carbide.

[0026] A plasma processing device, comprising:

[0027] Reaction chamber;

[0028] A base assembly disposed at the bottom of the reaction chamber, used for carrying a wafer;

[0029] A plasma confinement assembly as described in any one of the above, wherein the plasma confinement assembly is arranged around the susceptor assembly.

[0030] Optionally, the plasma processing device further comprises a gas shower head disposed at the top of the reaction chamber, for introducing reaction gas into the reaction chamber to perform plasma processing on the wafer.

[0031] Optionally, the plasma processing device is an inductively coupled plasma processing device.

[0032] Compared with the prior art, the present invention has the following advantages:

[0033] The present invention designs the confinement ring as an upper and lower two-piece structure. The upper ring directly faces the reaction area and is easily corroded by plasma. The upper ring is made of silicon-containing material, which can effectively prolong the plasma corrosion time and improve the service life. The lower ring is made of aluminum alloy, which is convenient for processing. The lower ring is covered by the upper ring and is not easily corroded. Even if it is corroded, it does not affect the use. Therefore, when the upper ring is corroded by plasma bombardment, only the upper ring can be replaced without replacing the lower ring, thereby reducing the use cost of the confinement ring; in addition, since the confinement ring adopts a two-piece structure, without affecting the plasma confinement effect, the exhaust channels of the two ring bodies can be designed to have a larger air conductivity, thereby increasing the air conductivity of the entire confinement ring and improving the exhaust efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to more clearly illustrate the technical solution of the present invention, the following briefly introduces the drawings required for the description. Obviously, the drawings described below are an embodiment of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative work:

[0035] Figure 1 A structural diagram of a plasma processing device provided by one embodiment of the present invention;

[0036] Figure 2 A structural diagram of a plasma confinement assembly provided in accordance with an embodiment of the present invention;

[0037] Figure 3 A top view of an upper ring provided in one embodiment of the present invention;

[0038] Figure 4 A top view of a lower ring provided in accordance with an embodiment of the present invention. DETAILED DESCRIPTION

[0039] The scheme proposed by the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer according to the following description. It should be noted that the accompanying drawings are in a very simplified form and are not in precise proportions, which are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention.

[0040] For the design of plasma confinement ring, it is difficult to meet the requirements of large gas conductivity and strong plasma confinement force at the same time. For hardware structure, larger / shallower exhaust channel can achieve larger gas conductivity, but it will weaken the confinement force on plasma. In addition, the plasma confinement ring directly faces the plasma processing area. With the development of etching process, the RF power applied to the reaction chamber is continuously increased, and the plasma bombardment on the side of the plasma confinement ring facing the plasma is getting stronger and stronger, and the loss rate of the plasma confinement ring is also increasing. The present invention is proposed based on this application demand.

[0041] The plasma confinement assembly of the present invention comprises a confinement ring and an intermediate grounding ring, wherein the confinement ring comprises an upper ring and a lower ring stacked up and down, exhaust channels are arranged in the upper ring and the lower ring and are interconnected to allow the reaction gas to be discharged, and the lower ring is electrically connected to the intermediate grounding ring, so that the confinement ring is grounded to confine the plasma flowing into the two exhaust channels. Since the confinement ring is provided with two ring body parts, the upper ring is made of a silicon-containing material and has the performance of anti-plasma corrosion, and the lower ring is made of an aluminum alloy material, and the lower ring is covered by the upper ring, so it is not easy to be corroded by plasma, and even if the upper ring directly faces the reaction area and is corroded, only the upper ring can be replaced without replacing the entire confinement ring, thereby reducing the use cost of the confinement ring.

[0042] Figure 1The schematic diagram of the structure of a capacitively coupled plasma processing device is shown, which includes a reaction chamber 100, a base assembly 200 is provided at the bottom of the reaction chamber 100 for carrying a wafer W, and a gas shower head 300 is provided at the top opposite to the base assembly 200 for delivering reaction gas to the reaction chamber 100. The gas shower head 300 and the base assembly 200 serve as the upper electrode and the lower electrode of the reaction chamber 100 respectively, and a reaction region F is formed between the upper and lower electrodes. A radio frequency power source is applied to at least one of the upper electrode or the lower electrode through a matching network, and a radio frequency electric field is generated between the upper electrode and the lower electrode to dissociate the reaction gas in the reaction region F into plasma, which contains a large number of active particles such as electrons, ions, excited atoms, molecules and free radicals. The above active particles can undergo various physical and chemical reactions with the surface of the wafer W to be processed, so that the morphology of the wafer surface changes, that is, the etching process is completed. The reaction chamber 100 further includes a plasma confinement assembly 400, which is disposed around the base assembly 200 and is used to exhaust the reaction gas in the reaction region F and prevent the plasma in the reaction region F from leaking to the non-reaction region to cause damage to the components in the non-reaction region. In another embodiment, the plasma confinement assembly 400 can also be used in an inductively coupled plasma processing device.

[0043] like Figure 2 As shown, a plasma confinement assembly 400 provided by the present invention includes a confinement ring 410 and an intermediate grounding ring 420, wherein the confinement ring 410 includes a stacked upper ring 411 and a lower ring 412, the upper ring 411 is made of a silicon-containing material, and the lower ring 412 is made of an aluminum alloy material, the upper ring 411 is provided with a first exhaust channel 4111, and the lower ring 412 is provided with a second exhaust channel 4121, the first exhaust channel 4111 is fluidically connected with the second exhaust channel 4121, and the reaction gas in the reaction region F flows out of the reaction region F through the first exhaust channel 4111 and the second exhaust channel 4121 in sequence, and finally flows out of the reaction chamber 100; the intermediate grounding ring 420 is arranged below the confinement ring 410 and is electrically connected to the lower ring 412, the intermediate grounding ring 420 is made of a conductor and is electrically grounded, so that the radio frequency energy can be shielded above the intermediate grounding ring 420 to avoid the generation of secondary plasma, and at the same time, the charge accumulated on the confinement ring 410 is guided away.

[0044] In this embodiment, the upper ring 411 can be made of a silicon-containing material, such as at least one of monocrystalline silicon, polycrystalline silicon and silicon carbide, which can effectively prolong the plasma corrosion time, resist plasma for a long time without replacement, improve the service life, and will not pollute the reaction chamber. The lower ring 412 is made of aluminum alloy and is electrically connected to the middle grounding ring 420 to achieve the plasma confinement function. Since the lower ring 412 is located below the upper ring 411, even if the upper surface of the lower ring 412 is corroded into a bare aluminum state, it does not affect the continued use, and can be fully used for a long time without replacement. Further, the upper surface of the lower ring 412 includes an anodized layer to prevent the lower ring 412 from being corroded by the plasma in the gas flowing out of the first exhaust channel 4111. The thickness of the anodized layer is, for example, 40μm to 70μm. The lower surface of the lower ring 412 is not anodized, that is, the lower surface is made of bare aluminum, and contacts with the upper surface of the middle grounding ring 420 to achieve electrical connection. In order to make the outer lower surface of the lower ring 412 and the outer upper surface of the middle grounding ring 420 evenly contact, a thermal conductive material 430 can be placed between the two to ensure that the lower ring 412 is fully DC grounded. The thermal conductive material 430 can be graphite, or a multi-layer structure of graphite wrapped aluminum, with a thickness of about 0.15mm to 0.3mm.

[0045] In this embodiment, since the confinement ring 410 is divided into an upper ring 411 and a lower ring 412 of upper and lower pieces, exhaust is performed through the connected first exhaust channel 4111 and the second exhaust channel 4121. Under the premise of ensuring the plasma confinement effect, the first exhaust channel 4111 and the second exhaust channel 4121 can be designed to have a large gas conductivity, thereby increasing the gas conductivity of the entire confinement ring 410, thereby improving the exhaust efficiency. Since the upper ring 411 is made of a silicon-containing material, such as silicon or silicon carbide, it is hard and not easy to deform, and a larger opening can be processed to be opened as an exhaust channel, so the gas conductivity of the first exhaust channel 4111 can be set to be greater than the gas conductivity of the second exhaust channel 4121. Further, a gas diffusion area 440 is provided between the lower surface of the upper ring 411 and the upper surface of the lower ring 412, and the gas diffusion area 440 connects the first exhaust channel 4111 and the second exhaust channel 4121. Optionally, the height of the gas diffusion area 440 is 2mm to 10mm. By providing gas diffusion region 440, the gas flowing out of first exhaust channel 4111 diffuses and then enters second exhaust channel 4121, which can further increase the gas conductivity of the entire confinement ring 410. It is easy to understand that the gas conductivity of first exhaust channel 4111 is U1, the gas conductivity of second exhaust channel 4121 is U2, and the gas conductivity of gas diffusion region 440 is U3, then the gas conductivity U of the entire confinement ring 410 satisfies: 1 / U1+1 / U2+1 / U3=1 / U, it can be seen that, without affecting the plasma confinement effect, the gas conductivity U of the entire confinement ring 410 can be increased by increasing the gas conductivity U1 of first exhaust channel 4111 and the gas conductivity U2 of second exhaust channel 4121, so that U is greater than the gas conductivity U0 of the original designed whole-piece confinement ring.

[0046] The present invention sets the plasma confinement ring 410 as a two-piece structure. When the confinement ring 410 is damaged, only the upper ring 411 can be replaced, which effectively reduces the cost of replacing the plasma confinement ring 410. Furthermore, by setting the upper ring 411 to be a silicon-containing material, the service life of the upper ring 411 can be extended to a certain extent. However, the inventors noticed that when the confinement ring 410 is set as an upper and lower ring, since the upper ring 411 is in contact with the plasma, the voltage of the upper ring 411 will be close to the plasma voltage, and the voltage of the lower ring 412 is closer to the ground voltage because it is electrically connected to the middle ground ring 420. If the voltage difference between the upper ring 411 and the lower ring 412 is too large, the gas between the two rings may be re-excited into plasma. To avoid this phenomenon, the present invention has found that the relative area X between the outer upper surface of the lower ring 412 and the outer lower surface of the upper ring 411 is set to be greater than 2.2×10 4 mm 2, a relatively large capacitance can be formed between the upper ring 411 and the lower ring 412, such as greater than 30nf. At this time, the difference in RF voltage between the upper ring 411 and the lower ring 412 is small, and the gas between the two will not be excited into plasma. Thereby ensuring that the plasma density of the confinement ring 410 composed of the upper ring 411 and the lower ring 412 is always in a trend of continuous attenuation in the vertical direction, forming a good confinement effect. At the same time, in order to ensure the gas conductivity of the confinement ring 410, the upper ring and the lower ring of the confinement ring respectively include an inner side surrounding the base and an outer side close to the side wall of the reaction chamber. The inner and outer sides are solid parts, and the area between the inner and outer sides is the exhaust area. In the present invention, the relative area X between the outer upper surface of the lower ring 412 and the outer lower surface of the upper ring 411 should not be too large, because it will occupy the area of ​​the exhaust area. Therefore, the present invention sets the relative area X between the two to be less than 6.8×10 4 mm 2 Further, the relative area X can be less than 6×10 4 mm 2 .

[0047] In one embodiment, the relative area X between the outer upper surface of the lower ring 412 and the outer lower surface of the upper ring 411 is greater than the relative area between the inner upper surface of the lower ring 412 and the inner lower surface of the upper ring 411, that is, the contact area between the upper ring 411 and the lower ring 412 on the outer side is increased as much as possible, so that there is a large grounding capacitance between the lower ring 412 and the upper ring 411, thereby improving the plasma confinement effect. In order to make the outer lower surface of the upper ring 411 and the outer upper surface of the lower ring 412 fully and evenly contact each other, a thermally conductive and electrically conductive material 430 can be arranged between the two. The thermally conductive and electrically conductive material 430 can be graphite, or a multilayer structure of graphite wrapped with aluminum, with a thickness of about 0.15mm to 0.3mm. In addition, by arranging the thermally conductive and electrically conductive material 430, the voltage difference between the upper ring 411 and the lower ring 412 can be reduced, and the secondary ignition of plasma in the space between the two can be prevented.

[0048] Optionally, the first exhaust channel 4111 may be an annular groove arranged in sequence along the radial direction of the upper ring 411, or a radial waist groove arranged in sequence along the circumference of the upper ring 411, and the first exhaust channel 4111 may have a larger gas conductivity by designing the groove to have a smaller depth-to-width ratio. The second exhaust channel 4121 may also be an annular groove arranged in sequence along the radial direction of the lower ring 412, or a radial waist groove arranged in sequence along the circumference of the lower ring 412, and the second exhaust channel 4121 may have a larger gas conductivity. In addition, the first exhaust channel 4111 and the second exhaust channel 4121 may also be other types of holes or grooves, as long as they can meet the exhaust and plasma confinement capabilities. In this embodiment, if Figure 3As shown, the first exhaust channel 4111 is a radial waist groove arranged in sequence along the circumference of the upper ring 411, as shown in FIG. Figure 4 As shown, the second exhaust channel 4121 is an annular groove arranged in sequence along the radial direction of the lower ring 412. In other embodiments, the first exhaust channel 4111 is an annular groove, the second exhaust channel 4121 is a waist-shaped groove, or the first exhaust channel 4111 and the second exhaust channel 4121 are both waist-shaped grooves or annular grooves.

[0049] The present invention not only reduces the replacement cost but also effectively improves the gas conductivity because the confinement ring 410 is set as a two-piece structure of an upper ring 411 and a lower ring 412. In the prior art, the main body material of the confinement ring is aluminum alloy. In order to ensure the plasma confinement effect, the exhaust channel needs to have a high aspect ratio, so the thickness of the confinement ring is relatively large. Since the temperature of the plasma chamber used by the confinement ring varies greatly, in order to prevent the confinement ring from deforming in a hot and cold environment and to ensure mechanical strength, the connecting ribs between the channels need to have a certain thickness, which will inevitably occupy the exhaust space. Therefore, it is difficult to increase the gas conductivity of a one-piece confinement ring. In the present invention, the upper ring 411 is made of silicon-containing material, such as at least one of monocrystalline silicon, polycrystalline silicon or silicon carbide, and is hard in texture, and a larger exhaust area can be set. In the present invention, the area of ​​the first exhaust channel 4111 in the upper ring 411 can account for 35%-50% of the area of ​​the upper ring 411. The lower ring 412 is made of aluminum alloy. Due to the smaller thickness, the thickness of the connecting rib can be further reduced. Therefore, the area of ​​the second exhaust channel 4121 in the lower ring 412 can account for 40%-65% of the area of ​​the lower ring 412.

[0050] In addition, the height ratio of the upper ring and the lower ring can be 1:1 to 1:1.5, so as to improve the gas conductivity while ensuring the confinement effect of the plasma.

[0051] In addition, the middle grounding ring 420 may also be provided with a third exhaust channel 421, such as Figure 1 As shown, the third exhaust channel 421 is connected to the second exhaust channel 4121. The third exhaust channel 421 can also play a role in confining plasma, quenching the residual plasma in the gas flowing out of the second exhaust channel 4121, and further improving the plasma confinement effect.

[0052] In summary, the present invention designs the confinement ring as an upper and lower two-piece structure. The upper ring directly faces the reaction area and is easily corroded by plasma. The upper ring is made of silicon-containing material, which can effectively prolong the plasma corrosion time and improve the service life. The lower ring is made of aluminum alloy. The lower ring is covered by the upper ring and is not easily corroded. Even if it is corroded, it does not affect the use. Therefore, only the upper ring can be replaced without replacing the lower ring, thereby reducing the use cost of the confinement ring; since the confinement ring adopts a two-piece structure, the exhaust channels of the two ring bodies can be designed to have a larger air conductivity without affecting the plasma confinement effect, thereby increasing the air conductivity of the entire confinement ring and improving the exhaust efficiency.

[0053] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0054] Although the content of the present invention has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the present invention. After reading the above content, it will be apparent to those skilled in the art that various modifications and substitutions of the present invention will occur. Therefore, the protection scope of the present invention should be limited by the appended claims.

Claims

1. A plasma confinement assembly, characterized in that: include: A restraint ring, comprising a stacked upper ring and a lower ring, wherein the upper ring is provided with a first exhaust channel, and the lower ring is provided with a second exhaust channel, wherein the first exhaust channel is fluidically connected to the second exhaust channel, the upper ring is made of a silicon-containing material, and the lower ring is made of an aluminum alloy material; The middle grounding ring is arranged below the confinement ring and is electrically connected to the lower ring.

2. The plasma confinement assembly of claim 1, wherein: The relative area between the outer upper surface of the lower ring and the outer lower surface of the upper ring is greater than 2.2×10 4 mm 2 And less than 6.8×10 4 mm 2 .

3. The plasma confinement assembly of claim 1, wherein: The upper surface of the lower ring includes an anodized layer, and the lower surface is made of bare aluminum.

4. The plasma confinement assembly of claim 3, wherein: The thickness of the anodized layer is 40 μm to 70 μm.

5. The plasma confinement assembly of claim 1, wherein: The outer upper surface of the lower ring is arranged opposite to the outer lower surface of the upper ring, and the grounding capacitance between the two is greater than 30nF.

6. The plasma confinement assembly of claim 5, wherein: A heat-conducting and electrically-conducting material is disposed between the outer upper surface of the lower ring and the outer lower surface of the upper ring to ensure uniform contact between the two.

7. The plasma confinement assembly of claim 5, wherein: The relative area between the outer upper surface of the lower ring and the outer lower surface of the upper ring is larger than the relative area between the inner upper surface of the lower ring and the inner lower surface of the upper ring.

8. The plasma confinement assembly of claim 1, wherein: The outer upper surface of the middle grounding ring and the outer lower surface of the lower ring are provided with heat-conducting and electrically-conducting materials for uniform contact between the two.

9. The plasma confinement assembly according to any one of claims 6 or 8, characterized in that The thermal and electrical conductive material is graphite, or a multi-layer structure of graphite wrapped with aluminum.

10. The plasma confinement assembly of claim 1, wherein: A gas diffusion area is provided between the lower surface of the upper ring and the upper surface of the lower ring, and the gas diffusion area is connected with the first exhaust channel and the second exhaust channel.

11. The plasma confinement assembly of claim 10, wherein: The height of the gas diffusion zone is 2 mm to 10 mm.

12. The plasma confinement assembly of claim 1, wherein: The air conductivity of the first exhaust passage is greater than the air conductivity of the second exhaust passage.

13. The plasma confinement assembly of claim 1, wherein: The first exhaust passages are annular grooves arranged in sequence along the radial direction of the upper ring, or radial waist grooves arranged in sequence along the circumferential direction of the upper ring.

14. The plasma confinement assembly of claim 1, wherein: The second exhaust passages are annular grooves arranged in sequence along the radial direction of the lower ring, or radial waist grooves arranged in sequence along the circumferential direction of the lower ring.

15. The plasma confinement assembly of claim 1, wherein: The middle grounding ring is provided with a third exhaust passage, and the third exhaust passage is in fluid communication with the second exhaust passage.

16. The plasma confinement assembly of claim 1, wherein: The area of ​​the first exhaust channel occupies 35%-50% of the area of ​​the upper ring, and the area of ​​the second exhaust channel occupies 40%-65% of the area of ​​the lower ring.

17. The plasma confinement assembly of claim 1, wherein: The height ratio of the upper ring to the lower ring is 1:1 to 1:1.

5.

18. The plasma confinement assembly of claim 1, wherein: The material of the upper ring is at least one of single crystal silicon, polycrystalline silicon or silicon carbide.

19. A plasma processing device, characterized in that: include: Reaction chamber; A base assembly disposed at the bottom of the reaction chamber, used for carrying a wafer; The plasma confinement assembly of any one of claims 1 to 18, wherein the plasma confinement assembly is disposed around the susceptor assembly.

20. The plasma processing apparatus according to claim 19, wherein: The plasma processing device further comprises a gas shower head arranged at the top of the reaction chamber, which is used for introducing reaction gas into the reaction chamber to perform plasma processing on the wafer.

21. The plasma processing apparatus according to claim 19, wherein: The plasma processing device is an inductively coupled plasma processing device.

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