A dual-band high-efficiency active integrated antenna

Abstract

This invention discloses a dual-band high-efficiency active integrated antenna, comprising a first surface structure, a first dielectric substrate, a second surface structure, a second dielectric substrate, and a third surface structure. The first surface structure is located on the upper surface of the first dielectric substrate, the second surface structure is located on the upper edge of the second dielectric substrate, and the third surface structure is located on the lower surface of the second dielectric substrate. The first surface structure includes a first annular slot and a second annular slot. The second surface structure includes a dual-band input matching circuit, a stabilization circuit, a transistor, a first capacitor, and a feeding circuit connected in sequence, and also includes a first bias circuit and a second bias circuit. The third surface structure includes a U-shaped slot and a rectangular slot. This invention can meet the requirements of dual-band operation while reducing system power loss and overall size. This invention can be widely applied in the field of wireless communication.

Description

Technical Field

[0001] This invention relates to the field of wireless communication, and more particularly to a dual-band high-efficiency active integrated antenna. Background Technology

[0002] With the development of wireless communication technology, compact and efficient active transmitting antennas are in high demand today. Miniaturized active antenna technology (AIA) is now used in many wireless systems such as radar and wireless satellite communication. How to improve communication quality while reducing system power loss and overall size has become a research hotspot.

[0003] Traditionally, the high-efficiency power amplifier (PA) and antenna are designed and connected separately, requiring matching networks and harmonic tuning networks. These passive networks not only occupy additional circuit area but also increase the insertion loss of the AIA, thus affecting the overall output power and efficiency. Furthermore, to meet the demands of high-speed communication between devices, modern mobile communication systems require more operating frequency bands to ensure reliable and efficient communication. Power amplifiers are crucial radio frequency devices, therefore multi-band power amplifiers have significant engineering application value. Summary of the Invention

[0004] In view of this, in order to solve the technical problem that existing integrated antennas cannot simultaneously meet the requirements of system power loss, overall antenna size, and dual-band operation, this invention proposes a dual-band high-efficiency active integrated antenna, which includes, from top to bottom, a first surface structure, a first dielectric substrate, a second surface structure, a second dielectric substrate, and a third surface structure, wherein:

[0005] The first surface structure is a double-ring slit structure;

[0006] The second surface structure includes a dual-frequency input matching circuit, a first bias circuit, a stabilizing circuit, a transistor, a second bias circuit, a first capacitor, and a power supply circuit connected in sequence.

[0007] The third surface structure includes U-shaped grooves and rectangular grooves;

[0008] It also penetrates the second surface structure, the second dielectric substrate, and the third surface structure through the first metal via, the second metal via, and the non-metallic trench.

[0009] Based on the above structure, the specific features of this dual-band high-efficiency active integrated antenna are as follows:

[0010] First, the radio frequency input signal passes through a dual-frequency input matching network, then through a stabilizing circuit to a transistor. After being amplified by the transistor, it enters the power supply circuit. The U-shaped slot and the rectangular slot in the third surface structure are used to control the second harmonic of the dual-frequency signal. Finally, the dual-frequency signal is transmitted to the first surface structure by electromagnetic coupling power supply. The dual-ring structure is used to amplify the dual-frequency signal and radiate it directionally into space.

[0011] In addition, the first bias circuit and the second bias circuit provide stable DC bias voltage and current for the transistor and prevent AC signals from flowing into the DC bias circuit. They also protect the circuit from damage to the transistor due to excessive current or voltage or self-oscillation.

[0012] Based on the above scheme, this invention provides a dual-band high-efficiency active integrated antenna. It utilizes the dual-band input matching network and the dual-ring slot structure to achieve dual-band functionality, making it suitable for more application scenarios. Simultaneously, by adjusting the size of the dual-ring slots to match the fundamental impedance of the dual bands, and using the U-shaped and rectangular slots in the third surface to control the second harmonics of the dual-band signals, it achieves control over the voltage and current waveforms. Furthermore, the output matching and second harmonic control functions are integrated into the antenna, significantly reducing circuit size while minimizing unnecessary insertion losses, resulting in a more compact structure with high efficiency and EIRP at both frequencies. Moreover, by utilizing the double-layer dielectric substrate structure and electromagnetic coupling feeding, it achieves directional radiation of dual-band signals, resulting in higher output gain in a specific direction. Attached Figure Description

[0013] Figure 1 This is a schematic diagram of the structure of a dual-band high-efficiency active integrated antenna provided by the present invention;

[0014] Figure 2 This is a schematic diagram of the splitting of three surfaces of a dual-band high-efficiency active integrated antenna provided by the present invention;

[0015] Figure 3 This is a schematic diagram of the second surface structure of a dual-band high-efficiency active integrated antenna provided by the present invention;

[0016] Figure 4 This is the radiation pattern of the antenna element provided in the embodiment of the present invention;

[0017] Figure 5 This is an efficiency diagram of an active antenna provided in an embodiment of the present invention;

[0018] Figure 6 This is an EIRP diagram of an active antenna provided in an embodiment of the present invention.

[0019] Reference numerals: 1. First surface structure; 2. Second surface structure; 3. Third surface structure; M1. First dielectric substrate; M2. Second dielectric substrate; 11. First annular gap; 12. Second annular gap; C1. First capacitor; C2. Second capacitor; C3. Third capacitor; C4. Fourth capacitor; R1. First resistor; TL1. First microstrip line; TL2. Second microstrip line; TL3. Third microstrip line; TL4. Fourth microstrip line; TL5. Fifth microstrip line; TL6. Sixth microstrip line; TL7. Seventh microstrip line; TL8. Eighth microstrip line; TL9. Ninth microstrip line; TL10. Tenth microstrip line; 21. Dual-frequency input matching circuit; 22. First bias circuit; 23. Stabilizing circuit; 24. Transistor; 25. Second bias circuit; 26. Power supply circuit; 31. U-shaped slot; 32. Rectangular slot; 4. First metal via; 5. Second metal via; 6. Non-metallic slot. Detailed Implementation

[0020] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0021] It should be noted that, for ease of description, only the parts relevant to the invention are shown in the accompanying drawings. Unless otherwise specified, the embodiments and features described in this application can be combined with each other.

[0022] It should be understood that the terms "system," "apparatus," "unit," and / or "module" used in this application are a method of distinguishing different components, elements, parts, sections, or assemblies at different levels. However, if other terms can achieve the same purpose, they may be replaced by other expressions.

[0023] As indicated in this application and claims, unless the context clearly indicates otherwise, the words "a," "an," "a," and / or "the" are not specifically singular and may include the plural. Generally, the terms "comprising" and "including" only indicate the inclusion of expressly identified steps and elements, which do not constitute an exclusive list, and the method or apparatus may also include other steps or elements. An element defined by the phrase "comprising an..." does not exclude the presence of other identical elements in the process, method, product, or apparatus that includes the element.

[0024] In the description of the embodiments of this application, "a plurality of" refers to two or more. The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature.

[0025] Furthermore, flowcharts are used in this application to illustrate the operations performed by the system according to embodiments of this application. It should be understood that the preceding or following operations are not necessarily performed precisely in sequence. Instead, the steps can be processed in reverse order or simultaneously. Additionally, other operations can be added to these processes, or one or more steps can be removed from them.

[0026] Reference Figure 1 This is a schematic diagram of an optional example of the dual-band high-efficiency active integrated antenna proposed in this invention, including a first surface structure, a first dielectric substrate, a second surface structure, a second dielectric substrate, and a third surface structure. The first surface structure is located on the upper surface of the first dielectric substrate, the second surface structure is located on the upper surface of the second dielectric substrate, and the third surface structure is located on the lower surface of the second dielectric substrate, wherein:

[0027] Both dielectric substrates are made of RO4003C material, each with a thickness of 0.813mm. The first layer has a size of 5*5mm², and the second layer has a size of 5*10mm². The operating frequencies of this invention are 2.45GHz and 5.5GHz.

[0028] In one embodiment of the present invention, the input impedance and output impedance that enable the present invention to output high efficiency or high power are obtained by using load traction technology and source traction technology. The obtained impedance value can be used as the design basis for the dual-frequency input matching circuit 21 and the design basis for the double annular gap structure in the first surface 1.

[0029] In some feasible embodiments, such as Figure 2 As shown, the first surface structure 1 includes a first annular gap 11 and a second annular gap 12. The first annular gap 11 and the second annular gap 12 are concentric annular rings, and the radius of the second annular gap 12 is smaller than that of the first annular gap 11. The center of the ring falls at the intersection of the two diagonals of the substrate.

[0030] The first annular slot 11 mainly serves as a radiating element at 2.45 GHz. Adjusting its size can make the antenna's port impedance at 2.45 GHz close to the optimal load impedance obtained through load pulling. The second annular slot 12 mainly serves as a radiating element at 5.5 GHz. Adjusting its size can make the antenna's port impedance at 5.5 GHz close to the optimal load impedance obtained through load pulling.

[0031] The third surface structure 3 includes a U-shaped slot 31 and a rectangular slot 32, and is located below the power supply circuit. The U-shaped slot 31 is used to control the second harmonic impedance at 2.45 GHz, and the rectangular slot 32 is used to control the second harmonic impedance at 5.5 GHz. This ensures that the real part of the second harmonic impedance at the two frequency points at one port of the power supply unit is 0, and the phase difference between the voltage and current waveforms is maintained at about 180°, thus ensuring high-efficiency output.

[0032] In some feasible embodiments, such as Figure 3 As shown, the second surface structure 2 includes a dual-frequency input matching circuit 21, a first bias circuit 22, a stabilizing circuit 23, a transistor 24, a second bias circuit 25, a first capacitor C1, and a power supply circuit 26, wherein:

[0033] The dual-frequency input matching circuit 21 includes a second capacitor C2, a first microstrip line TL1, a second microstrip line TL2, a third microstrip line TL3, a fourth microstrip line TL4, a fifth microstrip line TL5, and a sixth microstrip line TL6. The first port of the second capacitor C2, the first port of the first microstrip line TL1, and the first port of the second microstrip line TL2 are connected. The second port of the second microstrip line TL2, the first port of the third microstrip line TL3, and the first port of the fourth microstrip line TL4 are connected. The second port of the fourth microstrip line TL4, the first port of the fifth microstrip line TL5, and the first port of the sixth microstrip line TL6 are connected. The second port of the sixth microstrip line TL6 is connected to the first port of the first bias circuit 22.

[0034] The sixth microstrip line TL6, part A, is used to convert the impedances at two frequencies into a pair of conjugate impedances. The first microstrip line TL1, the second microstrip line TL2, the third microstrip line TL3, the fourth microstrip line TL4, and the fifth microstrip line TL5, part B, are used to simultaneously match the conjugate impedances to a 50Ω port impedance. The first microstrip line TL1, the third microstrip line TL3, and the fifth microstrip line TL5 are open lines; the five microstrip lines in part B are connected in an inverted V-shape.

[0035] The first bias circuit 22 includes a seventh microstrip line TL7 and a third capacitor C3. The first port of the seventh microstrip line TL7, the second port of the dual-frequency input matching circuit 21, and the first port of the stabilization circuit 23 are connected. The second port of the seventh microstrip line TL7, the first port of the third capacitor C3, and the first power supply port V are connected. gs The second port of the third capacitor C3 is connected to the first metal via 4.

[0036] The stabilizing circuit 23 includes a fourth capacitor C4 and a first resistor R1. The first port of the fourth capacitor C4, the first port of the first resistor R1, and the second port of the dual-frequency input matching circuit 21 are connected. The second port of the fourth capacitor C4, the second port of the first resistor R1, and the gate of the transistor 24 are connected.

[0037] The second bias circuit 25 includes an eighth microstrip line TL8 and a fifth capacitor C5. The first port of the eighth microstrip line TL8, the drain of the transistor 24, and the first port of the first capacitor C1 are connected. The second port of the eighth microstrip line TL8, the first port of the fifth capacitor C5, and the second power supply port V are connected. ds The second port of the fifth capacitor C5 is connected to the second metal via 5.

[0038] The power supply circuit 26 includes a ninth microstrip line TL9 and a tenth microstrip line TL10. The first port of the ninth microstrip line TL9 is connected to the second port of the first capacitor C1. The second port of the ninth microstrip line TL9 is connected to the tenth microstrip line TL10. The power supply circuit 26 couples the radio frequency signal to the first surface structure 1.

[0039] The DC bias voltage source is supplied through the first power supply port V. gs Second power port V ds Provide suitable quiescent operating points for transistor 24, with values ​​of -2.8V and 28V respectively. At this time, the drain current is approximately 171mA, and the quiescent operating point of transistor 24 is in deep AB class.

[0040] The capacitance of both the second capacitor C2 and the first capacitor C1 is 10pF to ensure that the DC power supply acts on the transistor and does not flow out of the circuit between the second capacitor C2 and the first capacitor C1.

[0041] The first bias circuit 22 and the second bias circuit 25 use a microstrip line with a quarter wavelength of the center frequency of the two frequency points, namely 3.975GHz. In addition, the parallel bypass capacitors used in the first bias circuit 22 and the second bias circuit 25 both have a capacitance of 10pF, so as to prevent AC signals from flowing into the DC bias circuit and protect the circuit from damage to the transistor due to excessive circuit size or self-excited oscillation.

[0042] The stabilization circuit 23 adopts an RC parallel structure to ensure that the amplifier maintains stable operation within the radio frequency range and prevents problems such as unstable oscillation, distortion and power loss. The stabilization circuit 23 adopted in this invention is an RC parallel structure, in which the stabilizing resistor R1 is 68Ω and the stabilizing capacitor C5 is 7.2pF. The stabilization circuit 23 ensures that the K value of the amplification unit 2 is greater than 1 at 2.45GHz and 5.5GHz, respectively, thus meeting the stability requirements.

[0043] like Figure 4 The image shows the radiation patterns of a dual-band high-efficiency active integrated antenna at 2.45 GHz and 5.5 GHz. It can be seen that the antenna is a directional radiation antenna, with the positive half-axis of the Z-axis being the main radiation direction. The gain Gt is 5.04 dB at 2.45 GHz and 6.71 dB at 5.5 GHz.

[0044] like Figure 5 As shown, an efficiency diagram of a dual-band high-efficiency active integrated antenna is presented. The diagram shows that the operating efficiency is 74% at 2.45 GHz and 59% at 5.5 GHz. The antenna achieves high efficiency at both frequencies, thus meeting the goal of dual-band high efficiency.

[0045] like Figure 6 The figure shows the EIRP of a dual-band high-efficiency active integrated antenna. From the figure, it can be seen that the two frequency points achieve good EIRP when the input power is 30dBm. The highest EIRP is 45.22dBm when operating at 2.45GHz and 46.1dBm when operating at 5.5GHz.

[0046] The above is a detailed description of the preferred embodiments of the present invention. However, the present invention is not limited to the embodiments described. Those skilled in the art can make various equivalent modifications or substitutions without departing from the spirit of the present invention. All such equivalent modifications or substitutions are included within the scope defined by the claims of this application.

Claims

1. A dual-band high-efficiency active integrated antenna, characterized in that, The system includes a first surface structure, a first dielectric substrate, a second surface structure, a second dielectric substrate, and a third surface structure. The first surface structure is located on the upper surface of the first dielectric substrate, the second surface structure is located on the upper surface of the second dielectric substrate, and the third surface structure is located on the lower surface of the second dielectric substrate. The first surface structure includes a first annular gap and a second annular gap; The second surface structure includes a dual-frequency input matching circuit, a stabilizing circuit, a transistor, a first capacitor, and a power supply circuit connected in sequence. The third surface structure includes a U-shaped groove and a rectangular groove; It also penetrates the second surface structure, the second dielectric substrate, and the third surface structure through the first metal via, the second metal via, and the non-metallic trench.

2. The dual-band high-efficiency active integrated antenna according to claim 1, characterized in that, The first and second annular gaps are concentric rings, and the radius of the second annular gap is smaller than that of the first annular gap.

3. The dual-band high-efficiency active integrated antenna according to claim 1, characterized in that, The second surface structure further includes a first bias circuit and a second bias circuit, wherein: The first port of the dual-frequency input matching circuit is connected to the signal input port; The second port of the dual-frequency input matching circuit, the first port of the first bias circuit, and the first port of the stabilizing circuit are connected. The second port of the stabilizing circuit is connected to the gate of the transistor; The drain of the transistor, the first port of the second bias circuit, and the first port of the first capacitor are connected. The second port of the first capacitor is connected to the power supply circuit.

4. The dual-band high-efficiency active integrated antenna according to claim 3, characterized in that, The dual-frequency input matching circuit includes a second capacitor, a first microstrip line, a second microstrip line, a third microstrip line, a fourth microstrip line, a fifth microstrip line, and a sixth microstrip line, wherein: The first port of the second capacitor, the first port of the first microstrip line, and the first port of the second microstrip line are connected. The second port of the second microstrip line, the first port of the third microstrip line, and the first port of the fourth microstrip line are connected. The second port of the fourth microstrip line, the first port of the fifth microstrip line, and the first port of the sixth microstrip line are connected; The second port of the sixth microstrip line is connected to the first port of the first bias circuit.

5. The dual-band high-efficiency active integrated antenna according to claim 3, characterized in that, The first bias circuit includes a seventh microstrip line and a third capacitor, wherein: The first port of the seventh microstrip line, the second port of the dual-frequency input matching circuit, and the first port of the stabilization circuit are connected. The second port of the seventh microstrip line, the first port of the third capacitor, and the DC input are connected. The second port of the third capacitor is connected to the first metal via.

6. The dual-band high-efficiency active integrated antenna according to claim 3, characterized in that, The stabilizing circuit includes a fourth capacitor and a first resistor, wherein: The first port of the fourth capacitor, the first port of the first resistor, and the second port of the dual-frequency input matching circuit are connected. The second port of the fourth capacitor, the second port of the first resistor, and the gate of the transistor are connected.

7. The dual-band high-efficiency active integrated antenna according to claim 3, characterized in that, The second bias circuit includes an eighth microstrip line and a fifth capacitor, wherein: The first port of the eighth microstrip line, the drain of the transistor, and the first port of the first capacitor are connected. The second port of the eighth microstrip line, the first port of the fifth capacitor, and the DC input are connected. The second port of the fifth capacitor is connected to the second metal via.

8. The dual-band high-efficiency active integrated antenna according to claim 3, characterized in that, The feed circuit includes a ninth microstrip line and a tenth microstrip line, wherein: The first port of the ninth microstrip line is connected to the second port of the first capacitor; The second port of the ninth microstrip line is connected to the tenth microstrip line.

9. The dual-band high-efficiency active integrated antenna according to claim 3, characterized in that, The third surface structure is located below the power supply circuit.

10. The dual-band high-efficiency active integrated antenna according to claim 1, characterized in that, Its working process is as follows: The radio frequency input signal passes sequentially through the dual-frequency input matching network, the stabilization circuit, and the transistor. After being amplified by the transistor, it enters the power supply circuit. The U-shaped groove and the rectangular groove in the third surface structure are used to control the second harmonic of the dual-frequency signal respectively. The dual-frequency signal is transmitted to the first surface structure by electromagnetic coupling feeding, and the dual-frequency signal is amplified and radiated into space by the double-ring structure.

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