A microcrystalline semiconductor battery

Abstract

The present invention discloses a microcrystalline semiconductor battery, which relates to the field of energy storage. The battery is based on N-type and P-type microcrystalline semiconductor materials, and an electron donor unit and an electron acceptor unit are formed by multiple microcrystalline semiconductor units. The N-type microcrystalline semiconductor and the P-type microcrystalline semiconductor are respectively placed in an insulating volume, and are provided with current inlet and outlet wire terminals. The current inlet of the N-type semiconductor and the current outlet of the P-type semiconductor are connected by a diode or a power diode, and the migration and diffusion of electrons are realized under the action of an external electric field. The battery has high energy density and efficient discharge performance in extremely cold environments, and its volume energy density is better than that of traditional chemical batteries. In addition, the use of microcrystalline semiconductor materials as the basic materials can also achieve efficient cooling and heating functions. Its cooling efficiency is improved compared to traditional semiconductor refrigeration technology, and it is suitable for low-power cooling and heating equipment.

Description

Technical Field

[0001] The present invention relates to the field of energy storage technology, and in particular to a microcrystalline semiconductor storage battery. Background Art

[0002] In the era of artificial intelligence, building massive databases relies on database chips. However, these chips consume significant amounts of energy during operation, with approximately 40% of this energy being lost as heat and approximately 50% being stored as information. This demonstrates that electricity is not only the driving force behind chip operation but also a key carrier for information storage and transmission. While semiconductor materials are primarily used to store and process information, they also possess the potential to store charge or energy to a certain extent. However, current research focuses more on the "information storage" function of semiconductors, while underemphasizing their "energy storage" properties.

[0003] In solar energy utilization technology, researchers have discovered that microcrystalline semiconductors can significantly improve photoelectric conversion efficiency. This is because microcrystalline semiconductor materials can provide more charge carriers, resulting in a much higher hole concentration in P-type microcrystals than in conventional P-type wafer materials, while the electron concentration in N-type microcrystals also significantly exceeds that of conventional N-type wafers. This phenomenon stems from the much larger surface area of ​​microcrystalline semiconductors than that of conventional wafer materials, making it easier for dopant impurities to penetrate and distribute, thereby effectively improving the carrier concentration and the material's photoelectric performance.

[0004] Chemical batteries convert electrical energy into chemical bond energy, which is a multi-dimensional electromagnetic force balance. This means that the kinetic energy of lithium ions is converted into lithium ion charge potential energy and embedded in the micropores of carbon sheets. Semiconductor material energy storage is an electromagnetic force balance system established by migrating the kinetic energy of electrons into holes and converting it into electron potential energy. Lithium batteries are electromagnetic force balance systems established by the migration of lithium ions into the micropores of carbon sheets. Although both semiconductor holes and carbon sheet micropores can establish electromagnetic force balance, holes are not as susceptible to ambient temperature as micropores due to their morphology, and the effect of temperature on holes is relatively limited. Therefore, holes can cope with the charging and discharging process with ease, and the charging and discharging speed is not greatly affected by extremely cold weather or relatively high temperature weather. Based on the above principle, relevant scientific and technological workers have applied for patents related to semiconductor chip energy storage. It is conceivable that its energy storage is not only very limited, but also that there will be minority carrier drift while the majority carriers diffuse within the semiconductor.

[0005] For example, the Chinese patent with publication number CN2416657Y is a technical method for storing electrical energy using semiconductor chips, which was applied for at the end of the last century. It also uses the majority-carrier diffusion charging and minority-carrier power generation of the PN junction to achieve the application purpose. This is only slightly stronger than storing information energy. The internal electric field energy established by the majority-carrier diffusion movement is very limited. Because the electron concentration is not enough, the concentration of impurities doped in chips will be greatly limited. Summary of the Invention

[0006] In view of the shortcomings of the prior art, the present invention discloses a microcrystalline semiconductor battery, comprising:

[0007] An N-type microcrystalline semiconductor and a P-type microcrystalline semiconductor, wherein the N-type microcrystalline semiconductor and the P-type microcrystalline semiconductor are respectively placed in respective insulating volumes and are respectively provided with current input and output terminals;

[0008] a unidirectional electronic component, wherein the positive electrode of the unidirectional electronic component is connected to the current outlet of the P-type microcrystalline semiconductor via a wire, and the negative electrode of the unidirectional electronic component is connected to the current inlet of the N-type microcrystalline semiconductor via a wire;

[0009] a first wiring device and a second wiring device, wherein the first wiring device is connected to the current charging and discharging input and output terminals of the N-type microcrystalline semiconductor, and the second wiring device is connected to the current charging and discharging input and output terminals of the P-type microcrystalline semiconductor;

[0010] Wherein, the first wiring device and the second wiring device are used to connect electrical loads, charging devices and DC power supplies.

[0011] As an optional implementation, it also includes:

[0012] a first capacitor, wherein the second wiring device is connected to a negative electrode of the first capacitor;

[0013] a second capacitor, wherein the first wiring device is connected to a positive electrode of the second capacitor;

[0014] A linkage switching switch, wherein the negative electrode of the first capacitor and the positive electrode of the second capacitor are respectively connected to the linkage switching switch via wires;

[0015] a third capacitor, wherein the positive electrode of the third capacitor is electrically connected to the positive electrode of the first capacitor via the linkage switch, and the negative electrode of the third capacitor is electrically connected to the negative electrode of the second capacitor via the linkage switch;

[0016] In response to the battery being in a charging process, the linkage switch turns on the DC power supply, and the first capacitor and the second capacitor achieve charge balance;

[0017] In response to the completion of charging of the battery, the linkage switch disconnects the DC power supply and reopens the positive and negative electrodes of the third capacitor.

[0018] As an optional implementation, it also includes:

[0019] A linkage switch is provided between the second wiring device and the negative electrode of the first capacitor and between the first wiring device and the positive electrode of the second capacitor.

[0020] As an optional implementation manner, the first capacitor, the second capacitor, and the third capacitor are all supercapacitors, and the capacity of the third capacitor is greater than the capacity of the first capacitor and the second capacitor.

[0021] As an optional implementation, the distance between the positive and negative electrodes of the first capacitor and the second capacitor can be adjusted synchronously to achieve the re-transfer and adjustment of the parallel electric field force.

[0022] As an optional implementation, the unidirectional electronic component includes: a plurality of diodes connected in parallel or a plurality of power diodes connected in parallel.

[0023] As an optional implementation, it also includes:

[0024] a first heat exchange device, provided on the P-type microcrystalline semiconductor;

[0025] a second heat exchange device, disposed on the N-type microcrystalline semiconductor;

[0026] The heat exchange device may be arranged in the microcrystalline semiconductor or on an external wall of the microcrystalline semiconductor.

[0027] As an optional implementation, it also includes:

[0028] a radiator, wherein the inlet of the first heat exchange device is connected to the outlet of the radiator through a pipeline;

[0029] A surface cooler, wherein the inlet of the second heat exchange device is connected to the outlet of the surface cooler through a pipeline;

[0030] a first circulation pump, wherein the outlet of the first heat exchange device is connected to the inlet of the first circulation pump via a pipeline, and the outlet of the first circulation pump is connected to the inlet of the radiator via a pipeline;

[0031] A second circulation pump, the outlet of the second heat exchange device is connected to the inlet of the second circulation pump through a pipeline, and the outlet of the second circulation pump is connected to the inlet of the surface cooler through a pipeline.

[0032] As an optional implementation, the cathode of the N-type microcrystalline semiconductor is connected to the cathode of the DC power supply, and the anode of the P-type microcrystalline semiconductor is connected to the anode of the DC power supply, so as to realize cooling and heating of the microcrystalline semiconductor.

[0033] As an optional implementation, the system further includes: a control module, the control module including:

[0034] a memory unit, configured to store a charge balance parameter, an electric field adjustment strategy, and a capacitor spacing adjustment instruction before the linkage switch is switched from a charging state to a state where the DC power supply is disconnected and the third capacitor is turned on;

[0035] a preloading unit, configured to output the charge balance parameter, the electric field adjustment strategy, and the capacitor spacing adjustment instruction stored in the memory unit to the control loop of the first capacitor and the second capacitor when the linkage switch switches states;

[0036] The delay control unit is used to set a predetermined delay time between the linkage switching switch disconnecting the DC power supply and connecting the third capacitor.

[0037] Compared with the prior art, the beneficial effects of the present application are as follows: the microcrystalline semiconductor battery provided by the present invention is based on the design of nano-scale microcrystalline semiconductor materials, and is superior to traditional chemical batteries in energy storage density. At the same time, it exhibits excellent adaptability in extremely cold and high temperature environments, overcoming the problem of performance degradation of existing batteries under extreme conditions. In addition, by combining the Peltier effect and an efficient heat exchange device, the present invention realizes the integrated application of cooling and heating functions, and its cooling efficiency is better than that of traditional semiconductor technology, and is suitable for miniaturized thermal management needs. The battery has fast charging and high-power discharge capabilities, meeting the immediate use needs of modern high-energy equipment. At the same time, it is adapted to a variety of application scenarios through modular design, showing good scalability. The use of environmentally friendly microcrystalline semiconductor materials not only reduces the risk of environmental pollution caused by chemical batteries, but also improves the overall energy storage efficiency by optimizing electron migration and electric field distribution paths. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 A schematic diagram of a microcrystalline semiconductor battery according to an embodiment of the present disclosure supplying power to a load after charging is completed;

[0039] Figure 2 A schematic diagram of a microcrystalline semiconductor battery provided by an embodiment of the present disclosure;

[0040] Figure 3 A schematic diagram of another microcrystalline semiconductor battery provided by an embodiment of the present disclosure;

[0041] Figure 4 A schematic diagram of another microcrystalline semiconductor battery provided by an embodiment of the present disclosure;

[0042] Figure 5 A schematic diagram of a cooling process for a microcrystalline semiconductor battery provided in an embodiment of the present disclosure.

[0043] Reference numerals:

[0044] 1. First insulating volume; 2. N-type microcrystalline semiconductor; 3. Second insulating volume; 4. P-type microcrystalline semiconductor; 5. One-way electronic component; 6. Current inlet; 7. Current outlet; 8. Second wiring device; 9. First wiring device; 10. Interlocking switch; 11. Load; 12. Second capacitor; 13. First capacitor; 14. Third capacitor; 15. Interlocking switching switch; 16. DC power supply; 17. Radiator; 18. First circulation pump; 19. First heat exchange device; 20. First outlet; 21. First inlet; 22. Surface cooler; 23. Second circulation pump; 24. Second heat exchange device; 25. Second inlet; 26. Second outlet. DETAILED DESCRIPTION

[0045] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments.

[0046] Unless otherwise defined, technical or scientific terms used in the present disclosure should have the same meaning as commonly understood by a person having ordinary skills in the field to which the present disclosure belongs.

[0047] The terms "first," "second," and similar terms used in this disclosure do not denote any order, quantity, or importance, but are merely used to distinguish between different components. Terms such as "include" or "comprising" mean that the elements or objects preceding the term include the elements or objects listed after the term and their equivalents, without excluding other elements or objects. Terms such as "connected" or "connected" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect.

[0048] Although semiconductor storage devices can use holes to host electrons, the number of holes in semiconductors is very limited. In fact, semiconductors do not need that many holes to provide hosting space for electrons. Even a few holes can be used because the ultimate purpose is not to store energy, but only to store information. Therefore, given that traditional semiconductor doping processes cannot allow all silicon atoms in the center of the lattice to penetrate to form majority carriers or hole carriers, the patented invention is a semiconductor battery formed by doping microcrystalline silicon particles, especially a power storage device doped with nano-scale microcrystalline particles. In this way, the impurity penetration surface area will be larger, and there will be space conditions for a large number of majority carriers to be hosted.

[0049] Microcrystalline semiconductor materials are mixed with conductive powder or conductive paste to form N-type microcrystalline donor materials and P-type microcrystalline host materials. The PN junction of the semiconductor is replaced by an insulating film. The N-type microcrystalline donor material and the P-type microcrystalline host material are placed on both sides of the insulating film respectively, thereby forming semiconductor capacitors of various structures. A wire connected to the positive electrode is led out from the P-type microcrystalline host material, and a wire connected to the negative electrode is led out from the N-type microcrystalline donor material. In this way, multiple semiconductor battery units are formed, and each unit can be connected in parallel or in series.

[0050] See Figure 1 , Figure 1 A schematic diagram of a microcrystalline semiconductor battery provided by the present disclosure providing power to a load after charging is completed; the microcrystalline semiconductor battery comprises:

[0051] An N-type microcrystalline semiconductor 2 and a P-type microcrystalline semiconductor 4, wherein the N-type microcrystalline semiconductor 2 and the P-type microcrystalline semiconductor 4 are respectively placed in the first insulating volume 1 and the second insulating volume 3, and are respectively provided with current input and output terminals;

[0052] a unidirectional electronic component 5, wherein the positive electrode of the unidirectional electronic component 5 is connected to the current outlet 7 of the P-type microcrystalline semiconductor 4 through a wire, and the negative electrode of the unidirectional electronic component 5 is connected to the current inlet 6 of the N-type microcrystalline semiconductor 2 through a wire;

[0053] a first wiring device 9 and a second wiring device 8, wherein the first wiring device 9 is connected to the current charging and discharging input and output terminals of the N-type microcrystalline semiconductor 2, and the second wiring device 8 is connected to the current charging and discharging input and output terminals of the P-type microcrystalline semiconductor 4;

[0054] The first wiring device 9 and the second wiring device 8 are used to connect an electrical load 11 or a charging device and a DC power supply 16 actually set based on a usage scenario.

[0055] As an optional implementation, the unidirectional electronic component 5 includes: a plurality of diodes connected in parallel or a plurality of power diodes connected in parallel.

[0056] In a specific implementation, the present disclosure uses an N-type microcrystalline semiconductor 2 as an electron donor material and a P-type microcrystalline semiconductor 4 as an electron acceptor material. These are respectively enclosed in respective insulating volumes and have their respective current inlet and outlet terminals. The P-type material current outflow end wire is connected to the positive electrode of a unidirectional electronic component 5, and the N-type material lead-out end is connected to the negative terminal of the unidirectional electronic component 5. Electrons migrate from the N-type microcrystalline semiconductor material to the P-type microcrystalline semiconductor material and recombine with holes. Driven by an external electric field, carriers accumulate in the P-type material. The unidirectional electronic component 5 is used to prevent electrons from flowing back to the N-type material, thereby maintaining unidirectional current flow and improving energy storage efficiency.

[0057] In a specific implementation, the external electric field must be used to store energy by coupling the respective P-type or N-type microcrystalline semiconductors in series with dual capacitors, so that the majority electrons in the N-type microcrystalline semiconductor 2 can be continuously migrated and lodged in the holes of the P-type microcrystalline semiconductor 4 by establishing an internal electric field. At the same time, a linkage switching switch 15 is provided. After all electrons are migrated and lodged in the holes, the linkage switching switch 15 automatically disconnects the DC power supply 16 and turns on the electromagnetic force to reconstitute a balanced supercapacitor. The positive and negative charges of the two capacitors (optional supercapacitors) coupling the N-type and P-type microcrystalline semiconductor devices facing the DC power supply end will run to the supercapacitor that is reconstituted with a balanced electromagnetic force. Then, the other side of the two coupled supercapacitors loses the attraction of opposite charges. The negative charge lodged under the action of the holes and the positive charge formed by the electrons lost by the N-type microcrystalline semiconductor material form an internal electric field through the unidirectional electronic element 5. In this way, the device to which the N-type microcrystalline semiconductor 2 belongs can be used as the positive electrode of the battery, and the corresponding device to which the P-type microcrystalline semiconductor 4 belongs constitutes the negative electrode of the battery.

[0058] As an alternative implementation, see Figure 2 , Figure 2 A schematic diagram of a microcrystalline semiconductor battery provided for the implementation of the present disclosure is Figure 1 Another solution of the embodiment in the embodiment, which is marked with Figure 1 The difference is that the N-type device composed of the first insulating volume 1 and the N-type microcrystalline semiconductor 2 and the P-type device composed of the second insulating volume 3 and the P-type microcrystalline semiconductor 4 are closely attached to each other.

[0059] This can form a more stable internal electric field, and at the same time the cold and heat of the heat-generating microcrystalline semiconductor and the cooling microcrystalline semiconductor can be partially neutralized.

[0060] See Figure 3 , Figure 3 A schematic diagram of another microcrystalline semiconductor battery provided for the implementation of the present disclosure; as an optional embodiment, the microcrystalline semiconductor battery further includes:

[0061] A first capacitor 13, wherein the second wiring device 8 is connected to the negative electrode of the first capacitor 13;

[0062] A second capacitor 12, wherein the first wiring device 9 is connected to the positive electrode of the second capacitor 12;

[0063] A linkage switching switch 15, wherein the negative electrode of the first capacitor 13 and the positive electrode of the second capacitor 12 are connected to the linkage switching switch 15 via wires;

[0064] a third capacitor 14, wherein the positive electrode of the third capacitor 14 is connected to the positive electrode of the first capacitor 13 via the linkage switch 15, and the negative electrode of the third capacitor 14 is connected to the negative electrode of the second capacitor 12 via the linkage switch 15;

[0065] In response to the battery being in the charging process, the linkage switch 15 turns on the DC power supply 16, and the first capacitor 13 and the second capacitor 12 achieve charge balance;

[0066] In response to the battery being charged, the linkage switch 15 disconnects the DC power supply 16 and reopens the positive and negative electrodes of the third capacitor 14 .

[0067] As an optional implementation, it also includes:

[0068] The linkage switch 10 is provided between the second wiring device 8 and the negative electrode of the first capacitor 13 and between the first wiring device 9 and the positive electrode of the second capacitor 12 .

[0069] As an optional implementation, the first capacitor 13 , the second capacitor 12 , and the third capacitor 14 are all supercapacitors, and the capacity of the third capacitor 14 is greater than the capacity of the first capacitor 13 and the second capacitor 12 .

[0070] As an optional implementation, the distance between the positive and negative electrodes of the first capacitor 13 and the second capacitor 12 can be adjusted synchronously to achieve the re-transfer and adjustment of the parallel electric field force.

[0071] In specific implementation, Figure 3 The example is Figure 1 Based on the embodiment, a relevant charging device is combined to complete its charging process. If the unique charging device of the present invention is not combined, and the DC power supply 16 is directly connected, its N-type and P-type microcrystalline semiconductor materials are only conductors and cannot realize charging and energy storage. If the first capacitor 13 (coupling capacitor, which can be a supercapacitor) is connected in series with the N-type microcrystalline semiconductor device, and the second capacitor 12 (coupling capacitor) is connected in series with the P-type microcrystalline semiconductor device before the DC power supply 16 is turned on, the majority carriers in the N-type microcrystalline semiconductor material migrate to the P-type microcrystalline semiconductor material through the unidirectional electronic element 5. These electrons cannot drift back to the N-type microcrystalline semiconductor material, nor can they flow into the positive electrode of the DC power supply 16, because the capacitor has the function of blocking DC power but passing AC power. Then the electrons will be retained in the holes of the P-type material and can form a relatively stable static balance of electromagnetic force.

[0072] On the other hand, the first capacitor 13 will cause the negative charge migrated from the N-type material to be bound by the positive charge on the other side of the capacitor, and the positive charge in the N-type microcrystalline semiconductor material will be bound by the negative charge on the other side of the second capacitor 12. In order to allow electrons to better reside in the P-type semiconductor holes, the positive and negative charges of the capacitors (the second capacitor 12 and the first capacitor 13) must be removed before the majority electron migration from the N-type microcrystalline semiconductor material can be completed and completely hosted in the P-type microcrystalline semiconductor holes, so that the N-type device and the P-type device themselves form an internal balanced electric field. At this time, it is necessary to disconnect the second capacitor 12 from the DC power supply 16 through the linkage switching switch 15, and instead turn on the capacitor (the third capacitor 14) that re-establishes the electromagnetic force balance, that is, the second capacitor 12 and the third capacitor 14 are connected through the linkage switching switch 15. At the same time, the linkage switching switch 15 also disconnects the first capacitor 13 from the DC power supply 16, and instead turns on the capacitor (the third capacitor 14) that re-establishes the electromagnetic force balance, that is, the first capacitor 13 and the third capacitor 14 are connected through the linkage switching switch 15.

[0073] Then, the positive and negative charges of the second capacitor 12 and the first capacitor 13 respectively run into the third capacitor 14, forming a new parallel electric field force balance, and the electrons migrated from the N-type microcrystalline semiconductor 2 form an internal electric field force balance with the P-type microcrystalline semiconductor 4 through the unidirectional electronic element 5. At this time, the linkage switch 10 for connecting the positive side of the first capacitor 13 to the N-type terminal device, that is, the first wiring device 9, and the linkage switch 10 for connecting the negative side of the second capacitor 12 to the P-type terminal device, that is, the second wiring device 8 can be cut off, so that the entire charging process is completed. After that, the connection line at the other end of the linkage switch 10 can be connected to the load 11 (such as Figure 1 shown).

[0074] In a specific implementation, the plates (positive and negative) of the first capacitor 13 and the second capacitor 12 can be mounted on their respective brackets, which can be precisely adjusted to the distance between each other by mechanical or mechatronic devices. Preferably, the bracket is made of high-strength insulating material to ensure that no additional leakage path is introduced during the adjustment process. In order to achieve synchronous adjustment, a retractable micro linear drive (such as a piezoelectric actuator, an electric screw, a screw mechanism linked to a stepper motor, or a precision fine-tuning guide device) can be provided on each of the plate brackets of the first capacitor 13 and the second capacitor 12. During execution, the control unit will send adjustment signals to the two sets of capacitor plate brackets at the same time according to the pre-set control logic and the real-time detected charge state, internal electric field distribution or external load demand information, so that the plates of the first capacitor 13 and the second capacitor 12 move inward or outward synchronously, thereby changing the gap between the two.

[0075] This synchronized distance adjustment can be implemented in a closed-loop control mode: when a sensor (such as a displacement sensor or electric field strength sensor) detects that the expected electric field force state has not been achieved or maintained, the control unit continues to fine-tune the actuator's expansion and contraction until the desired electric field distribution and energy state are achieved. Through this precisely controlled synchronized adjustment, the distance between the positive and negative electrodes of the two capacitors can be dynamically varied, thereby finely regulating the internal electron-hole balance process.

[0076] This type of distance adjustment is of great significance for achieving efficient charge diffusion and migration and optimizing the electron hosting state inside microcrystalline semiconductors.

[0077] In addition, such synchronous adjustment also facilitates the flexible tuning of the battery performance under different operating environments (such as temperature changes and sudden load changes), and can improve the overall energy storage and output efficiency by fine-tuning the electrode distance without changing the hardware structure.

[0078] For further information, see Figure 4 , Figure 4 A schematic diagram of another microcrystalline semiconductor battery provided for the implementation of the present disclosure; as an optional embodiment, Figure 4 and Figure 3 The marked serial numbers are the same, the difference is that the N-type device and the P-type device are placed close together, which facilitates heat transfer and makes it easier for the migrating electrons to lodge in the holes. The linkage switching switch 15 is in a state where the electromagnetic force is connected to re-establish the balanced capacitor, that is, between the positive and negative poles of the third capacitor 14, and the DC power supply 16 is disconnected.

[0079] In addition, in combination with a supercapacitor charging device and a battery device based on a microcrystalline semiconductor, heat exchange devices are respectively set inside the N-type and P-type microcrystalline semiconductors, and are respectively equipped with respective circulation pumps and radiators 17 or surface coolers 22, and a DC power supply 16 is used as a thrust for heat transfer to realize a new type of semiconductor cooling and heating. The interior of the existing refrigeration plate is a thermopile composed of hundreds of pairs of electrically coupled thermocouples to achieve an enhanced cooling (heating) effect. The N-type microcrystalline semiconductor material and the P-type microcrystalline semiconductor material of the present invention are connected in series with a power supply, which is equivalent to forming an electrical couple. When the majority electron migrates to the hole, a Peltier endothermic effect occurs, and the kinetic energy of the electron migration is promoted by the external molecular kinetic energy.

[0080] For this, see Figure 5 , Figure 5 A schematic diagram of a cooling process for a microcrystalline semiconductor battery provided in an embodiment of the present disclosure; as an optional implementation, the microcrystalline semiconductor battery further includes:

[0081] A first heat exchange device 19 is provided on the P-type microcrystalline semiconductor 4;

[0082] A second heat exchange device 24 is provided on the N-type microcrystalline semiconductor 2;

[0083] The heat exchange device may be arranged in the microcrystalline semiconductor or on an external wall of the microcrystalline semiconductor.

[0084] As an optional implementation, it also includes:

[0085] Radiator 17, the inlet of the first heat exchange device 19 is connected to the outlet of the radiator 17 through a pipeline;

[0086] A surface cooler 22, wherein the inlet of the second heat exchange device 24 is connected to the outlet of the surface cooler 22 through a pipeline;

[0087] a first circulation pump 18, wherein the outlet of the first heat exchange device 19 is connected to the inlet of the first circulation pump 18 via a pipeline, and the outlet of the first circulation pump 18 is connected to the inlet of the radiator 17 via a pipeline;

[0088] The outlet of the second circulating pump 23 and the second heat exchange device 24 are connected to the inlet of the second circulating pump 23 through a pipeline, and the outlet of the second circulating pump 23 is connected to the inlet of the surface cooler 22 through a pipeline.

[0089] In a specific implementation, the second inlet 25 of the second heat exchange device 24 is connected to the outlet of the surface cooler 22 through a pipeline, the second outlet 26 of the heat exchange device is connected to the inlet of the first circulation pump 23 through a pipeline, and the outlet of the first circulation pump 23 is connected to the inlet of the surface cooler 22 through a pipeline; and the first outlet 20 on the first heat exchange device 19 is connected to the inlet of the second circulation pump 18 through a pipeline, the outlet of the second circulation pump 18 is connected to the inlet of the radiator 17 through a pipeline, and the outlet of the radiator 17 is connected to the first inlet 21 of the first heat exchange device 19 through a pipeline.

[0090] The lead wire of the P-type microcrystalline semiconductor 4 loaded into the second insulating volume 3 is connected to the positive pole of the unidirectional electronic component 5 (diode or power diode); the lead wire of the N-type microcrystalline semiconductor 2 loaded into the first insulating volume 1 is connected to the negative pole of the unidirectional electronic component 5, the second wiring device 8 is connected to the positive pole of the DC power supply 16 through a wire, and the first wiring device 9 is connected to the negative pole of the DC power supply 16 with a wire. When the power is turned on, under the action of the external electric field, the majority electrons of the N-type microcrystalline semiconductor 2 will form a trend of flowing toward the P-type microcrystalline semiconductor 4, but lack sufficient kinetic energy and must accept external molecular kinetic energy to move. In this way, they will absorb the heat around the N-type material to push the electrons to transfer toward the P-type microcrystalline semiconductor 4, and bring the heat of the N-type microcrystalline semiconductor material to the P-type microcrystalline semiconductor material through the migration of electrons, thereby causing the temperature of the N-type microcrystalline semiconductor material to decrease and the temperature of the P-type microcrystalline semiconductor material to increase. This is the Peltier endothermic effect.

[0091] Unlike traditional semiconductor refrigeration units, which consist of hundreds of tiny N-type and P-type semiconductors connected in series and parallel to form a cooling stack, the refrigeration unit is comprised of hundreds of electrically coupled thermopiles to enhance cooling (heating). When a P-type and N-type semiconductors are placed in a circuit to form a pair of units, they generate electron-hole pairs at one end, reducing internal energy and lowering temperature, forming the cold junction. At the other end, the electron-hole pairs recombine, increasing internal energy and raising temperature, forming the hot junction. The temperature differential generated by a single pair of PN units is limited, so multiple pairs can be connected in series and parallel within the circuit, then packaged on ceramic plates to form a TEC device. This way, one end of the TEC device serves as the cold side and the other as the hot side. The more thermopiles connected in series and parallel, the greater the cooling power and the lower the temperature.

[0092] In practice, the present invention achieves efficient heat transfer and regulation by disposing corresponding heat exchange devices (e.g., first heat exchange device 19 and second heat exchange device 24) within or adjacent to the N-type microcrystalline semiconductor 2 and the P-type microcrystalline semiconductor 4, and utilizing a radiator 17, a surface cooler 22, and a circulating pump. The radiator 17 can be a structure with a large heat exchange area (e.g., a metal radiator with fins and heat exchange tubes). When a fluid medium (e.g., water, ethylene glycol solution, or other coolant) passes through it, the radiator 17 efficiently releases heat to the ambient air, thereby lowering the temperature of the circulating medium. The surface cooler 22, typically a tube-and-fin heat exchanger or a plate heat exchanger, operates similarly to the radiator 17 but is typically used to cool the fluid or, under certain operating conditions, to recover and redistribute heat. For example, by passing a low-temperature refrigerant fluid from the cooling side through the surface cooler 22, the heat transfer process can be carried out under controlled conditions, thereby precisely providing cooling or pre-cooling heat exchange capabilities for the N-type or P-type microcrystalline semiconductor side.

[0093] In the above heat exchange circuit, the circulation pumps (such as the first circulation pump 18 and the second circulation pump 23) are used to maintain a certain fluid flow and pressure in the pipeline system, thereby ensuring that the coolant or heating medium flows continuously between the radiator 17, the surface cooler 22, and the heat exchange device.

[0094] When powered, the impeller or rotor within the pump rotates at high speed, drawing cryogenic liquid from one end of the cooler 22 or radiator 17, pressurizing it and delivering it to the heat exchanger. As heat is transferred between the heat exchanger and the semiconductor material, the temperature of the circulating fluid changes. This heat is then dissipated externally by the radiator 17 or cooler 22, or transferred to components that require it, achieving a stable thermal management cycle.

[0095] In addition, the first heat exchange device 19 and the second heat exchange device 24 can select appropriate structures and operating modes according to the application scenario. Since temperature gradients may occur in different regions during the operation of the microcrystalline semiconductor battery (for example, the cooling and heating effects associated with the migration of electrons from the N-type region to the P-type region), the provision of heat exchange devices on both sides helps maintain a relative balance in the local temperature field.

[0096] Exemplarily, the first heat exchange device 19 and the second heat exchange device 24 may adopt mature heat transfer elements such as microchannel cold plates, heat pipes or substrate-embedded flow channel structures with high thermal conductivity. These heat exchange devices are usually passed through a cooling medium (such as deionized water, ethylene glycol solution or other coolants with both low freezing point and good thermal conductivity). In the first heat exchange device 19 adjacent to the P-type microcrystalline semiconductor 4, the cooling medium can be continuously flowed by the promotion of a circulation pump, thereby quickly taking away the heat released by the encounter between electrons and holes, avoiding local overheating and affecting the charge migration ability of the semiconductor material. In the second heat exchange device 24 adjacent to the N-type microcrystalline semiconductor 2, a suitable low-temperature environment is formed in this area by the same circulation of the cooling medium, which is conducive to enhancing the cooling effect when electrons flow from the N-type region to the P-type region.

[0097] Taking the battery compartment of an electric vehicle as an example, when microcrystalline semiconductor batteries are installed near the vehicle chassis or electric drive system, the external ambient temperature may be high and fluctuate frequently. By independently configuring a first heat exchange device 19 and a second heat exchange device 24 in the N-type and P-type regions and connecting the radiator 17, the surface cooler 22, and the circulation pump to form a closed loop, the temperature distribution of the semiconductor region can be quickly controlled under high-load conditions. Because the circulation pump can adjust the flow rate and pressure as needed, when the vehicle accelerates and causes the battery to discharge rapidly, the control module can increase the flow rate of the circulating medium to enhance heat exchange capacity and prevent overheating from affecting charge transfer efficiency. Conversely, under light load or standby mode, the circulation pump can reduce the flow rate to reduce energy consumption while maintaining an appropriate thermal balance within the battery.

[0098] In this way, with the help of the coordinated operation of the above-mentioned radiator 17, surface cooler 22 and circulation pump, the microcrystalline semiconductor battery of the present invention can maintain a suitable temperature distribution under different working conditions such as power-on and energy storage and discharge. On the one hand, the heat exchange efficiency can be finely controlled by adjusting the speed or flow of the circulation pump, so that the waste heat generated inside the battery can be quickly removed when needed to avoid local overheating; on the other hand, the working state of the radiator 17 or surface cooler 22 can be adjusted accordingly according to the load demand or the switching of the cooling and heating mode, so as to achieve the purpose of improving the overall energy utilization rate, extending the service life of the device and improving the reliability of the battery of the present invention. Through the combination of such conventional and mature heat exchange and fluid circulation means, the microcrystalline semiconductor battery described in the present invention can stably and efficiently perform energy storage and thermal management functions in a variety of applications.

[0099] The microcrystalline semiconductor used in the present invention can be a nano-scale particle semiconductor, and the cooling effect of the semiconductor components connected in series and parallel is better than that of the existing semiconductor refrigerators, because the N-type and P-type microcrystalline semiconductor volume devices are mixed with conductive materials, and the conductive material is equivalent to the copper skin of the conductive layer under the insulating ceramic layer of the traditional semiconductor refrigerator. Therefore, its cooling power will be greater and the efficiency will be correspondingly improved. Because the heat exchange device is closer to the cold source or heat source of the semiconductor, its heat transfer area will also be greatly improved.

[0100] In this way, the microcrystalline semiconductor solid-state battery of the present invention has the advantages of both supercapacitors and lithium batteries. The principle of majority carrier migration and hosting holes is similar to the principle of lithium ions embedding in carbon atom micropores, except that electrons host holes. During discharge, it is much easier for majority carriers to leave holes than for lithium ions to deintercalate. Especially in low-temperature environments, the advantages are more prominent, and its discharge power is also much greater.

[0101] For example, the microcrystalline semiconductor battery of the present invention is used as an electric vehicle battery without the need for a supercapacitor to quickly start the vehicle, and has a fast charging speed and a longer endurance.

[0102] As an optional implementation, the system further includes: a control module, the control module including:

[0103] A memory unit, configured to store a charge balance parameter, an electric field adjustment strategy, and a capacitor spacing adjustment instruction before the linkage switch 15 switches from a charging state to a state where the DC power supply 16 is disconnected and the third capacitor 14 is turned on;

[0104] a preloading unit, configured to output the charge balance parameter, electric field adjustment strategy, and capacitor spacing adjustment instruction stored in the memory unit to the control loop of the first capacitor 13 and the second capacitor 12 when the linkage switch 15 switches states;

[0105] The delay control unit is used to set a predetermined delay time between the linkage switch 15 disconnecting the DC power supply 16 and connecting the third capacitor 14.

[0106] In a specific implementation, in this embodiment, in order to achieve precise control of the electron-hole migration process within the microcrystalline semiconductor battery, a control module can be added to the battery system, which includes a memory unit, a preloading unit, and a delay control unit. The control module can be composed of a single-chip microcontroller (MCU) or a programmable logic controller (PLC) and a corresponding drive circuit, and is connected to the first capacitor 13, the second capacitor 12, the third capacitor 14, the linkage switch 15, and each electrode lead of the microcrystalline semiconductor battery via a data line and a control line.

[0107] During operation, when the external DC power supply 16 is nearing completion of charging the battery, the control module's memory unit reads the charge balance parameters, electric field adjustment strategy, and instructions for fine-tuning the capacitor spacing from previously recorded data, which was previously written to the memory unit during the charging phase or initial calibration phase. At this point, the MCU's embedded algorithm selects a matching charge distribution scheme and capacitor plate spacing adjustment value (which can be used to control a small motor or linear actuator to make micron-level adjustments between the plates) based on the currently detected voltage, current, and internal temperature parameters, and loads this data into the preload unit's temporary register.

[0108] During the interval when the linkage switching switch 15 is about to transition from the "charging" state to the "disconnecting the DC power supply 16 and connecting the third capacitor 14" state, the preloading unit, under the control of the MCU, outputs a predetermined voltage reference value and charge distribution instruction to the control circuits corresponding to the first capacitor 13 and the second capacitor 12. The control circuit then drives the micro-actuator to begin synchronously fine-tuning the distance between the capacitor plates, so that the plate gap between the two sets of capacitors reaches the previously calculated preset value. At the same time, the preloading unit also outputs the rated electric field balance parameters to the relevant control circuit via a PWM (pulse width modulation) signal or DAC (digital-to-analog conversion), so that the capacitor terminals have the ideal initial field strength conditions at the moment of switching.

[0109] During this process, the delay control unit will set a short delay time (for example, in the range of 10 to 100 milliseconds, which can be adjusted according to the characteristics of the device and the application scenario). This delay will take effect after the linkage switching switch 15 cuts off the DC power supply 16, thereby ensuring that the access of the third capacitor 14 does not occur instantaneously. The delay is achieved by setting a count value in the timer module inside the MCU. From the moment the linkage switching switch 15 disconnects the DC power supply 16, the timer starts counting, and the control signal remains output during the delay time, so that the internal charge distribution has enough buffer time to complete the initial balance, reducing the electromagnetic overshoot and thermal transients that may be caused by rapid switching. When the delay time ends, the delay control unit of the control module instructs the linkage switching switch 15 to turn on the positive and negative poles of the third capacitor 14 to achieve the final step of rebalancing the internal electric field.

[0110] In a specific implementation, the N-type and P-type microcrystalline semiconductors in the microcrystalline semiconductor battery exhibit special charge distribution and migration characteristics at the nanoscale and micrometer scale. When the DC power supply 16 is charging, the external electric field drives the electrons to migrate from the N-type region to the P-type region holes, thereby maintaining the internal charge balance after the power is cut off. However, unlike traditional electrochemical batteries or pure supercapacitors, the electron-hole distribution inside the microcrystalline semiconductor material is extremely sensitive to instantaneous electric field changes, fine-tuning of the plate spacing, and electromagnetic interference. Once the linkage switching switch 15 suddenly cuts off the DC power supply 16 and turns on the third capacitor 14 without sufficient buffering and advance pre-adjustment, the electric field will instantly change direction and intensity, resulting in the inability of electrons to fully and stably reside in the holes. This may cause partial charge back migration or disordered diffusion, reducing the available energy storage capacity, and accompanied by problems such as local overheating of the material or obstruction of charge transfer in low-temperature areas.

[0111] This application has made targeted technical enhancements in the control module for the unique nano-micro charge dynamic characteristics and sensitive internal field distribution of microcrystalline semiconductor batteries. The memory unit not only simply records general charge balance parameters and electric field adjustment strategies, but also specifically includes the internal electric field distribution matrix of the microcrystalline semiconductor, the band structure characteristic parameters, and the optimal capacitor spacing control curve related to the semiconductor energy level obtained by experimental calibration and real-time sensing data. When the DC power supply 16 approaches the disconnection point, the MCU will extract the charge distribution instructions and plate spacing adjustment scheme suitable for the current scenario from the memory based on specific parameters such as the instantaneous temperature gradient, internal electric field strength difference, and electron-hole recombination rate of the microcrystalline semiconductor material.

[0112] The preloading unit executes this set of parameter loading processes specific to the characteristics of microcrystalline semiconductors at the moment when the state of the linkage switching switch 15 is about to be switched. Unlike general energy storage systems that only precharge or preset the voltage and current, the preloading unit in this embodiment combines information such as the particle size distribution, hole density characteristics, and band offset previously obtained from calibration experiments to accurately control the nanometer-level adjustment between the plates of the first capacitor 13 and the second capacitor 12. In actual operation, this may be achieved through a high-precision piezoelectric actuator to achieve a change of several microns or even nanometers in the plate gap, thereby forming an internal electric field distribution suitable for the continued hosting of electrons during the transition period of the linkage switching, avoiding charge migration or disordered oscillation due to instantaneous mismatch.

[0113] In addition, the setting of the delay control unit is no longer just to provide a time buffer. Its delay time is not a fixed value, but can be dynamically adjusted according to specific parameters such as the rate of change of the temperature field inside the microcrystalline semiconductor, the local conductivity of the N-type and P-type regions, and the electron-hole state density. When the linkage switching switch 15 disconnects the DC power supply 16, the delay control unit starts the timer countdown while monitoring the feedback data of the internal temperature sensor and the electric field strength sensor. Once it is sensed that the specific local heat diffusion rate and charge settlement rate reach a pre-defined stable threshold, the delay time will automatically end, indicating that the third capacitor 14 is connected. In this way, the delay time is not set arbitrarily, but is strictly determined dynamically according to the charge and heat distribution characteristics of the microcrystalline semiconductor during the short free relaxation phase after power failure, thereby achieving an optimal state that does not consume too much time and ensures that electrons can successfully host holes.

[0114] Exemplarily, a temperature sensor and an electric field strength sensor are embedded within the microcrystalline semiconductor battery. These sensors collect real-time information about the local temperature gradient and electric field strength changes within the N-type and P-type microcrystalline semiconductor materials. Before the DC power supply 16 is disconnected, the MCU in the control module obtains reference parameters for determining the charge stability state from the memory unit, including:

[0115] The threshold value of the local heat diffusion rate (for example, ΔT / Δt ≤ 0.5K / ms, where ΔT represents the temperature change and Δt represents the time interval. ΔT / Δt reflects the rate of temperature change per unit time and is an important parameter for determining system stability and heat dissipation performance);

[0116] The threshold of the charge settlement rate (the hole-electron recombination rate tends to be stable, for example: the hole density change rate in a certain area is less than 1% / ms);

[0117] Electric field intensity fluctuation threshold (for example, the local electric field intensity changes by less than 5% within 10ms);

[0118] When the linkage switch 15 disconnects the DC power supply 16, the delay control unit starts the internal timer and starts timing. At the same time, the MCU starts monitoring the sensor data at a high-speed cycle (for example, sampling once every 0.5ms):

[0119] Temperature sensors are located at key locations adjacent to N-type and P-type semiconductors (e.g., in the center of the electron migration path). After power is disconnected, current-driven electron migration is suppressed, and the system begins to relax naturally. At this point, the MCU continuously reads temperature data and calculates the short-term temperature change rate (ΔT / Δt). In the early stages, due to the readjustment of electron distribution, a transition period of rapid local temperature changes may occur. Once ΔT / Δt significantly decreases and stabilizes below a preset threshold (e.g., ΔT / Δt is less than 0.5K / ms for three consecutive sampling periods), the MCU deems that the thermal diffusion rate has stabilized and that the system no longer experiences significant residual heat fluctuations.

[0120] The electric field strength sensor is used to detect the strength and distribution uniformity of the electric field in a specific area within a microcrystalline semiconductor. When the DC power supply 16 is disconnected, the distribution of internal electrons and holes shifts from the external electric field balance to the built-in electric field balance. This process involves the electrons gradually entering the corresponding hole positions and forming a relatively stable charge state. The MCU obtains local electric field data through a multi-point electric field sensor and compares this data with the hole density change reference model established during the previous calibration period to estimate the changing trend of the hole density and charge settlement rate. When the MCU detects that the electric field strength fluctuation amplitude is reduced to a predetermined standard (for example, less than 5% variation range) and is stable for more than a minimum duration (such as 5 to 10 ms) during a number of consecutive samplings (such as 10 times), it can be determined that the electrons have basically completed the redistribution and settlement of holes, and the internal charge is gradually balancing.

[0121] During the detection process, the MCU combines the judgment conditions of heat diffusion and charge settlement and adopts a logical judgment method: only when all target threshold conditions are met at the same time (that is, the heat diffusion rate reaches the stable threshold, the electric field fluctuation drops to the low amplitude range, and the electron-hole distribution stabilizes), the MCU sends an end delay signal to the delay control unit. This process may be shorter or longer than the pre-set delay time. For example, if in a certain operation, the ambient temperature is high and the heat diffusion is faster, and the conditions are met within 10ms, the delay control unit will immediately end the delay after 10ms and turn on the third capacitor 14; on the contrary, if the ambient temperature is low or there is a local high-density charge inside the semiconductor that takes a longer time to relax, the MCU may not detect the parameter stable state until after 30ms, and the delay control unit will end the delay after 30ms and turn on the third capacitor 14.

[0122] Thus, when the linkage switch 15 disconnects the DC power supply 16, the delay time is no longer a fixed value, but is determined by the actual state parameters within the microcrystalline semiconductor. This ensures that the system accurately finds the optimal access time to achieve smooth electron-hole hosting and smooth electric field reconstruction, without excessively prolonging the wait (wasting time and reducing system response speed) or blindly connecting the third capacitor 14 prematurely (which may cause charge imbalance or thermal abrupt change).

[0123] Thus, through the parameter caching of the memory unit, the advance command output of the preload unit, and the timing buffering of the delay control unit, the control module provided by this embodiment can effectively reduce the risk of transient electric field disturbances and thermal shock during the battery's transition from a charging state to a stable discharge state, thereby achieving a more stable electron-hole balance. This operation process requires no human intervention; the MCU automatically completes it based on built-in algorithms and real-time sensor data, thereby improving system reliability and service life.

[0124] It should be understood that in various embodiments of the present invention, the size of the serial numbers of the above-mentioned processes does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present invention.

[0125] It should be understood that determining B based on A does not mean determining B based solely on A. B can also be determined based on A and / or other information.

[0126] Those skilled in the art will appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed in the present invention can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professionals and technicians can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of the present invention.

[0127] Throughout this specification, references to terms such as "one embodiment," "example," or "specific example" indicate that the specific features, structures, materials, or characteristics described in conjunction with that embodiment or example are included in at least one embodiment or example of the present invention. In this specification, schematic representations of these terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

[0128] The preferred embodiments of the present invention disclosed above are intended only to help illustrate the present invention. These preferred embodiments do not exhaustively describe all details, nor do they limit the present invention to specific embodiments. Obviously, many modifications and variations are possible based on the contents of this specification. These embodiments are selected and described in detail in this specification to better explain the principles and practical applications of the present invention, thereby enabling those skilled in the art to better understand and utilize the present invention. The present invention is limited only by the claims and their full scope and equivalents.

Claims

1. A microcrystalline semiconductor battery, characterized in that: include: An N-type microcrystalline semiconductor and a P-type microcrystalline semiconductor, wherein the N-type microcrystalline semiconductor and the P-type microcrystalline semiconductor are respectively placed in respective insulating volumes and are respectively provided with current input and output terminals; a unidirectional electronic component, wherein the positive electrode of the unidirectional electronic component is connected to the current outlet of the P-type microcrystalline semiconductor via a wire, and the negative electrode of the unidirectional electronic component is connected to the current inlet of the N-type microcrystalline semiconductor via a wire; a first wiring device and a second wiring device, wherein the first wiring device is connected to the current charging and discharging input and output terminals of the N-type microcrystalline semiconductor, and the second wiring device is connected to the current charging and discharging input and output terminals of the P-type microcrystalline semiconductor; Wherein, the first wiring device and the second wiring device are used to connect an electrical load, a charging device or a DC power supply; Also includes: a first capacitor, wherein the second wiring device is connected to a negative electrode of the first capacitor; a second capacitor, wherein the first wiring device is connected to a positive electrode of the second capacitor; A linkage switching switch, wherein the positive electrode of the first capacitor and the negative electrode of the second capacitor are connected to the linkage switching switch via wires; a third capacitor, wherein the positive electrode of the third capacitor is electrically connected to the positive electrode of the first capacitor via the linkage switch, and the negative electrode of the third capacitor is electrically connected to the negative electrode of the second capacitor via the linkage switch; In response to the battery being in a charging process, the linkage switch turns on the DC power supply, and the first capacitor and the second capacitor achieve charge balance; In response to the battery being charged, the linkage switch disconnects the DC power supply and reconnects the positive and negative electrodes of the third capacitor; Also includes: a linkage switch, the linkage switch being arranged between the second wiring device and the negative electrode of the first capacitor and between the first wiring device and the positive electrode of the second capacitor; The first capacitor, the second capacitor, and the third capacitor are all supercapacitors, and the capacity of the third capacitor is greater than that of the first capacitor and the second capacitor.

2. The microcrystalline semiconductor battery according to claim 1, characterized in that: The distance between the positive and negative electrodes of the first capacitor and the second capacitor can be adjusted synchronously, so as to realize the re-transfer and adjustment of the parallel electric field force.

3. The microcrystalline semiconductor battery according to claim 2, characterized in that: The unidirectional electronic component includes: a plurality of diodes connected in parallel or a plurality of power diodes connected in parallel.

4. The microcrystalline semiconductor battery according to claim 3, characterized in that: Also includes: a first heat exchange device, provided on the P-type microcrystalline semiconductor; a second heat exchange device, disposed on the N-type microcrystalline semiconductor; The heat exchange device may be arranged in the microcrystalline semiconductor or on an external wall of the microcrystalline semiconductor.

5. The microcrystalline semiconductor storage battery according to claim 4, characterized in that: Also includes: a radiator, wherein the inlet of the first heat exchange device is connected to the outlet of the radiator through a pipeline; A surface cooler, wherein the inlet of the second heat exchange device is connected to the outlet of the surface cooler through a pipeline; a first circulation pump, wherein the outlet of the first heat exchange device is connected to the inlet of the first circulation pump via a pipeline, and the outlet of the first circulation pump is connected to the inlet of the radiator via a pipeline; A second circulation pump, the outlet of the second heat exchange device is connected to the inlet of the second circulation pump through a pipeline, and the outlet of the second circulation pump is connected to the inlet of the surface cooler through a pipeline.

6. The microcrystalline semiconductor storage battery according to claim 5, characterized in that: The negative electrode of the N-type microcrystalline semiconductor is connected to the negative electrode of the DC power supply through a first wiring device, a linkage switch, a second capacitor and a linkage switching switch, and the positive electrode of the P-type microcrystalline semiconductor is connected to the positive electrode of the DC power supply through a second wiring device, a linkage switch, a first capacitor and a linkage switching switch, so as to realize cooling and heating of the microcrystalline semiconductor.

7. The microcrystalline semiconductor storage battery according to claim 6, characterized in that: Also includes: A control module, comprising: a memory unit, configured to store a charge balance parameter, an electric field adjustment strategy, and a capacitor spacing adjustment instruction before the linkage switch is switched from a charging state to a state where the DC power supply is disconnected and the third capacitor is turned on; a preloading unit, configured to output the charge balance parameter, the electric field adjustment strategy, and the capacitor spacing adjustment instruction stored in the memory unit to the control loop of the first capacitor and the second capacitor when the linkage switch switches states; The delay control unit is used to set a predetermined delay time between the linkage switching switch disconnecting the DC power supply and connecting the third capacitor.

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