Display panel and display device
By designing the reflective layer and light blocking layer in the OLED display panel, the problem of ambient light affecting the display effect is solved, and better display effect and electrical performance are achieved.
Patent Information
- Application Number
- CN202510095771.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-21
- Publication Date
- 2025-04-11
AI Technical Summary
The display effect of existing OLED display panels is poor, mainly because the transistors in the driving backplane are susceptible to ambient light and produce photogenerated carriers.
A display panel is designed, including a substrate, a reflective layer, a light blocking layer and a plurality of light emitting devices. The first electrode of the first type of light emitting device has light reflectivity, and the first electrode of the second type of light emitting device has light transmittance. The reflective layer reflects blue or green light emitted by the second type of light emitting device and blocks red light in the ambient light to prevent it from illuminating on the transistors of the pixel driving circuit.
By reducing the influence of red light in ambient light on the transistor, the electrical performance of the pixel driving circuit is improved, thereby improving the display effect of the display panel.
Smart Images

Figure CN119816130A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of display technology, and in particular to a display panel and a display device. Background Art
[0002] Organic Light Emitting Diode (OLED) display panels are hailed as the next generation of display devices due to their advantages such as self-luminescence, high efficiency, bright colors, light weight, power saving and rollability, and have attracted increasing attention in recent years.
[0003] The display panel includes a driving backplane and a plurality of light-emitting devices, and the driving backplane includes a plurality of transistors. However, the transistors in the current driving backplane are easily affected by ambient light, generating photogenerated carriers, resulting in poor display effects of the display panel. Summary of the invention
[0004] The embodiments of the present application provide a display panel and a display device, which can solve the problem of poor display effect of the OLED display panel in the prior art. The technical solution is as follows:
[0005] In one aspect, a display panel is provided, comprising: a substrate, a light reflecting layer, a light blocking layer, and a plurality of light emitting devices;
[0006] The plurality of light-emitting devices are distributed on one side of the substrate, each of the light-emitting devices has a first electrode and a second electrode arranged opposite to each other, the first electrode being closer to the substrate than the second electrode; the plurality of light-emitting devices include a plurality of first-type light-emitting devices and a plurality of second-type light-emitting devices, the first electrode in the first-type light-emitting device and the first electrode in the second-type light-emitting device having different reflectivity and / or transmittance;
[0007] The reflective layer is located on a side of the plurality of second-type light-emitting devices facing the substrate;
[0008] The light blocking layer is located on a side of the light reflecting layer facing the substrate.
[0009] Optionally, the orthographic projection of the light-blocking layer on the substrate is located within the orthographic projection of the light-reflecting layer on the substrate; and the light-blocking layer at least includes a metal light-blocking layer made of a metal material.
[0010] Optionally, the display panel further comprises: a metal pattern layer, the metal pattern layer being located on a side of the reflective layer facing the substrate;
[0011] Wherein, the metal pattern layer includes the metal light-blocking layer.
[0012] Optionally, the display panel further includes: a plurality of pixel driving circuits, and a plurality of auxiliary switching electrodes electrically connected to the plurality of pixel driving circuits; the plurality of auxiliary switching electrodes correspond to the plurality of light-emitting devices, and the auxiliary switching electrodes are electrically connected to the first electrodes in the corresponding light-emitting devices;
[0013] Wherein, the metal pattern layer includes the plurality of auxiliary switching electrodes and the metal light blocking layer.
[0014] Optionally, the first electrode in the first type of light emitting device includes: a reflective electrode;
[0015] Wherein, the metal pattern layer includes the reflective electrode and the metal light-blocking layer.
[0016] Optionally, the light-blocking layer further includes: a first transparent electrode electrically connected to a side of the metal light-blocking layer facing the substrate, and a second transparent electrode electrically connected to a side of the metal light-blocking layer facing away from the substrate; the first electrode in the second type of light-emitting device is electrically connected to the second transparent electrode;
[0017] The first electrode in the first type of light emitting device further includes: a third transparent electrode electrically connected to a side of the reflective electrode facing the substrate, and a fourth transparent electrode electrically connected to a side of the reflective electrode facing away from the substrate;
[0018] The first transparent electrode and the third transparent electrode are arranged in the same layer and made of the same material; the second transparent electrode and the fourth transparent electrode are arranged in the same layer and made of the same material.
[0019] Optionally, the first electrode in the first type of light-emitting device further includes: a transparent auxiliary transfer electrode electrically connected to a side of the fourth transparent electrode away from the substrate;
[0020] Wherein, the transparent auxiliary switching electrode is arranged in the same layer and made of the same material as the first electrode in the second type of light-emitting device.
[0021] Optionally, the display panel further includes: a first transparent conductive layer, a second transparent conductive layer and a pixel definition layer; the first transparent conductive layer includes the second transparent electrode and the fourth transparent electrode, and the second transparent conductive layer includes the transparent auxiliary transfer electrode and the first electrode in the second type of light-emitting device;
[0022] The light reflecting layer is located on a side of the first transparent conductive layer away from the substrate, the second transparent conductive layer is located on a side of the light reflecting layer away from the substrate, and the pixel definition layer is located on a side of the second transparent conductive layer away from the substrate;
[0023] The pixel definition layer has: a first type of pixel opening corresponding to the first type of light-emitting device, and a second type of pixel opening corresponding to the second type of light-emitting device; the reflective layer has: a first auxiliary opening corresponding to the first type of light-emitting device, and a second auxiliary opening corresponding to the second type of light-emitting device;
[0024] Among them, for the first type of pixel openings and the first auxiliary openings corresponding to the same first type of light-emitting device, the first type of pixel openings are connected to the first auxiliary openings; for the second type of pixel openings and the second auxiliary openings corresponding to the same second type of light-emitting device, the orthographic projection of the second type of pixel openings on the substrate does not overlap with the orthographic projection of the second auxiliary openings on the substrate.
[0025] Optionally, the light-blocking layer is a film layer structure that is disposed as a whole layer.
[0026] Optionally, the light-blocking layer is made of an organic material having light absorption property; or, the light-blocking layer is made of an organic material doped with scattering particles.
[0027] Optionally, the light blocking layer and the organic planar layer in the display panel are multiplexed into a same film layer;
[0028] Alternatively, the display panel further includes an organic planar layer, and the organic planar layer is located on a side of the light-blocking layer facing the substrate, or on a side of the light-blocking layer facing away from the substrate.
[0029] Optionally, the light-blocking layer includes a plurality of first inorganic layers and a plurality of second inorganic layers stacked in layers, and the plurality of first inorganic layers and the plurality of second inorganic layers are arranged alternately;
[0030] The light-blocking layer is used to reflect light of the same color as the light emitted by the first type of light-emitting device.
[0031] Optionally, the reflective layer includes a plurality of third inorganic layers and a plurality of fourth inorganic layers stacked in layers, and the plurality of first inorganic layers and the plurality of second inorganic layers are arranged alternately;
[0032] Wherein, the reflective layer is used to reflect the light emitted by the second type of light-emitting device.
[0033] Optionally, the orthographic projection of the second type of light emitting device on the substrate is located within the orthographic projection of the light reflecting layer on the substrate, and the orthographic projection of the second type of light emitting device on the substrate is located within the orthographic projection of the light blocking layer on the substrate.
[0034] On the other hand, a display device is provided, including: a display panel and a driving chip, wherein the display panel is any one of the display panels described above, and the driving chip is used to apply a driving signal to the display panel.
[0035] The beneficial effects brought by the technical solution provided by the embodiment of the present application include at least:
[0036] The first electrode in the first type of light-emitting device provided in the embodiment of the present application is reflective, and the first electrode in the second type of light-emitting device is translucent. The reflective layer can reflect the blue light or green light in the direction toward the substrate in the light emitted by the second type of light-emitting device, as well as the blue light and green light in the ambient light entering the second type of light-emitting device, and the red light in the ambient light can pass through the reflective layer. The red light in the ambient light that passes through the reflective layer can be blocked by the light-blocking layer, and the red light in the ambient light will not irradiate the transistor in the pixel driving circuit, so that the electrical performance of the transistor in the pixel driving circuit is better, and thus the display effect of the display panel is better. BRIEF DESCRIPTION OF THE DRAWINGS
[0037] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.
[0038] Figure 1 It is a schematic diagram of the film structure of a display panel;
[0039] Figure 2 is a graph of the light absorption rate of a metal reflective electrode;
[0040] Figure 3 is a graph of the reflectivity of a metal reflective electrode;
[0041] Figure 4 is a schematic diagram of a film layer structure of a display panel provided in an embodiment of the present application;
[0042] Figure 5 is a schematic diagram of a film structure of a reflective layer provided in an embodiment of the present application;
[0043] Figure 6 It is a schematic diagram of the film structure of a first electrode in a first type of light-emitting device provided in an embodiment of the present application;
[0044] Figure 7 is a schematic diagram of a film layer structure of another display panel provided in an embodiment of the present application;
[0045] Figure 8is a schematic diagram of a film layer structure of another display panel provided in an embodiment of the present application;
[0046] Fig. 9 is a schematic diagram of a film layer structure of another display panel provided in an embodiment of the present application;
[0047] Fig.10 is a schematic diagram of a film structure of a light-blocking layer provided in an embodiment of the present application;
[0048] Fig.11 is a schematic diagram of a film layer structure of a display panel provided in another embodiment of the present application;
[0049] Fig.12 is a schematic diagram of a film layer structure of another display panel provided in another embodiment of the present application;
[0050] Fig.13 is a schematic diagram of a film layer structure of another display panel provided in another embodiment of the present application;
[0051] Fig.14 It is a schematic diagram of the film structure of a light-blocking layer provided in an embodiment of the present application. DETAILED DESCRIPTION
[0052] In order to make the objectives, technical solutions and advantages of the present application clearer, the implementation methods of the present application will be further described in detail below with reference to the accompanying drawings.
[0053] In related art, please refer to Figure 1 , Figure 1 The display panel 000 may include: a substrate 100, a plurality of light emitting devices 200 located on one side of the substrate, and a plurality of pixel driving circuits 300 electrically connected to the plurality of light emitting devices 200. The pixel driving circuits 300 are closer to the substrate than the light emitting devices 200.
[0054] Each light emitting device 200 includes: a first electrode 201, a light emitting layer 201, and a second electrode 203. The first electrode 201 in the light emitting device 200 is closer to the substrate 100 than the second electrode 203, and the first electrode 201 in the light emitting device 200 can be electrically connected to the pixel driving circuit 300. Each pixel driving circuit 300 includes at least two transistors and at least one storage capacitor.
[0055] In order to increase the light extraction efficiency of the display panel 000, it is necessary to reflect the light emitted by the light emitting layer 202 in each light emitting device 200 in the direction toward the substrate 100, and the reflected light can be emitted in the direction away from the substrate 100. Among them, the plurality of light emitting devices 200 include a plurality of first-type light emitting devices 210 and a plurality of second-type light emitting devices 220. The first-type light emitting device 210 is used to emit red light, and the second-type light emitting device 220 is used to emit green light or blue light.
[0056] Please refer to Figure 2 and Figure 3 , Figure 2 It is a graph of the light absorption rate of a metal reflective electrode. Figure 3 It is a curve diagram of the reflectivity of a metal reflective electrode. Figure 1 The horizontal axis represents the wavelength of the light emitted by the light emitting device, and the vertical axis represents the light absorption rate of the metal reflective electrode. Figure 2 The horizontal axis in the figure represents the wavelength of the light emitted by the light emitting device, and the vertical axis represents the reflectivity of the metal reflective electrode. Since the metal reflective electrode has a certain absorption effect on the blue light and green light in the short-wave band, the metal reflective electrode has a poor reflection effect on the blue light and green light. For example, when the wavelength of the light emitted by the light emitting device is in the short wavelength range of 400 nanometers to 550 nanometers, the metal reflective electrode will have an absorption rate of 4% to 13% on the light emitted by the light emitting device, resulting in the metal reflective electrode being unable to reflect the light emitted by the light emitting device.
[0057] Therefore, a distributed Bragg reflector is usually used as the reflective layer 400 to reflect blue light and green light. Since the reflection band of the distributed Bragg reflector is affected by the refractive index of the material, it is difficult for the reflection band of the distributed Bragg reflector to cover the wavelength range of red light, green light and blue light. Figure 1 As shown, in order to increase the light extraction efficiency of the display panel 000, the first electrode 201 of the first type light emitting device 210 can adopt a metal reflective electrode with reflective properties, so that the metal reflective electrode can better reflect the red light emitted by the first type light emitting device 210; the first electrode 201 of the second type light emitting device 220 can adopt a transparent electrode with light transmittance, so that the green light or blue light emitted by the second type light emitting device 220 can pass through the transparent electrode and be better reflected by the reflective layer 400.
[0058] However, since the first electrode 201 of the second type light-emitting device 220 is a transparent electrode with light transmittance, and the reflective layer 400 made of a distributed Bragg reflector can only reflect blue light and green light, the red light in the ambient light incident on the display panel 000 can pass through the reflective layer 400 and irradiate the transistor in the pixel driving circuit 300 after passing through the second type light-emitting device 220, causing photogenerated carriers to be generated in the channel region of the transistor, thereby affecting the electrical performance of the transistor, and ultimately resulting in poor display effect of the display panel 000.
[0059] In order to solve the above technical problems, the present application embodiment provides a display panel. Figure 4 , Figure 4 The display panel 000 includes a substrate 100 , a light-reflecting layer 400 , a light-blocking layer 500 and a plurality of light-emitting devices 200 .
[0060] The multiple light-emitting devices 200 in the display panel 000 are distributed on one side of the substrate 100. Each light-emitting device 200 has a first electrode 201 and a second electrode 202 that are relatively arranged, and a light-emitting layer 203 located between the first electrode 201 and the second electrode 202, and the first electrode 201 is closer to the substrate 100 than the second electrode 202.
[0061] The multiple light-emitting devices 200 in the display panel 000 include multiple first-type light-emitting devices 210 and multiple second-type light-emitting devices 220 , and the first electrodes 201 in the first-type light-emitting devices 210 and the first electrodes 201 in the second-type light-emitting devices 220 have different reflectivities and / or transmittances.
[0062] Exemplarily, the reflectivity of the first electrode 201 in the first type of light-emitting device 210 is greater than the reflectivity of the first electrode 201 in the second type of light-emitting device 220, and / or the transmittance of the first electrode 201 in the first type of light-emitting device 210 is less than the transmittance of the first electrode 201 in the second type of light-emitting device 220.
[0063] In one possible case, the first electrode 201 in the first type of light emitting device 210 is reflective, and the first electrode 201 in the second type of light emitting device 220 is translucent. For example, the first electrode 201 in the first type of light emitting device 210 may include a reflective electrode made of a metal material; the first electrode 201 in the second type of light emitting device 220 may be a transparent electrode made of a transparent conductive material. Here, the wavelength of light emitted by the plurality of first type of light emitting devices 210 is different from the wavelength of light emitted by the plurality of second type of light emitting devices 220. For example, the plurality of first type of light emitting devices 210 can all be used to emit red light; a portion of the second type of light emitting devices 220 in the plurality of second type of light emitting devices 220 can be used to emit green light, and another portion of the second type of light emitting devices 220 can be used to emit blue light.
[0064] In this way, the light emitted by the light-emitting layer 203 of the first type light-emitting device 210 in the direction toward the substrate 100 can be reflected by the first electrode 201 of the first type light-emitting device 210, thereby improving the light extraction efficiency of the display panel 000. And because the first type light-emitting device 210 emits red light, when the first electrode 201 in the first type light-emitting device 210 includes a reflective electrode made of a metal reflective material, the reflective electrode can better reflect the red light, so as to ensure that the light extraction efficiency of the first type light-emitting device 210 is high.
[0065] The light emitted from the light emitting layer 203 of the second type light emitting device 220 in the direction toward the substrate 100 can pass through the first electrode 201 of the second type light emitting device 220. Since the reflective layer 400 in the display panel 000 is located on the side of the plurality of second type light emitting devices 220 facing the substrate 100. At the same time, the reflective layer 400 can be a distributed Bragg reflector for reflecting green light and blue light. Therefore, the light emitted from the light emitting layer 203 of the second type light emitting device 220 in the direction toward the substrate 100 can be well reflected by the reflective layer 400 after passing through the first electrode 201 of the second type light emitting device 220, so as to ensure that the light extraction efficiency of the second type light emitting device 220 is high.
[0066] For example, when the reflective layer 400 is a distributed Bragg reflector, please refer to Figure 5 , Figure 54 is a schematic diagram of a film structure of a reflective layer provided in an embodiment of the present application. The reflective layer 400 includes a plurality of third inorganic layers 401 and a plurality of fourth inorganic layers 402 stacked in layers, and the plurality of third inorganic layers 401 and the plurality of fourth inorganic layers 402 are arranged alternately. That is, a fourth inorganic layer 402 is distributed between two adjacent third inorganic layers 401, and a third inorganic layer 401 is distributed between two adjacent fourth inorganic layers 402. In the reflective layer 400, the adjacent third inorganic layer 401 and the fourth inorganic layer 402 together form a reflective layer group 400a, and the number of reflective layer groups 400a in the reflective layer 400 can be 8 to 26 groups.
[0067] In the same reflective layer group 400a, the third inorganic layer 401 is closer to the substrate 100 than the fourth inorganic layer 402. A single reflective layer group 400a in the reflective layer 400 is composed of an inorganic layer with a higher refractive index and an inorganic layer with a lower refractive index, that is, when the refractive index of the third inorganic layer 401 is higher, the refractive index of the fourth inorganic layer 402 is lower; when the refractive index of the third inorganic layer 401 is lower, the refractive index of the fourth inorganic layer 402 is higher. For example, the difference between the refractive index of the third inorganic layer 401 and the refractive index of the fourth inorganic layer 402 can be between 0.7 and 1.1, and the thickness of the inorganic layer with a lower refractive index can be between 45 nanometers and 55 nanometers, and the thickness of the inorganic layer with a higher refractive index can be between 75 nanometers and 85 nanometers. The reflective layer 400 can be made of any two materials selected from silicon dioxide, titanium dioxide and niobium pentoxide. In this way, it can be ensured that the reflective layer 200 can be used to reflect green light and blue light, that is, it can be ensured that the reflective layer 400 can reflect the light emitted by the second type light emitting device 200.
[0068] In the embodiment of the present application, the display panel 000 may further include a plurality of pixel driving circuits 300, and a plurality of connection electrodes S electrically connected to the plurality of pixel driving circuits 300, and the plurality of connection electrodes S are electrically connected to the first electrodes 201 of the plurality of light-emitting devices 200. Each pixel driving circuit 300 may provide a driving signal to the corresponding light-emitting device 200 to drive the corresponding light-emitting device 200 to emit light. And each pixel driving circuit 300 may include at least two transistors and at least one storage capacitor. Since the reflective layer 400 can only reflect green light and blue light, the red light in the ambient light directed to the display panel 000 can pass through the reflective layer 400. In order to prevent the red light in the ambient light from irradiating the transistor in the pixel driving circuit 300, a light-blocking layer 500 is required to block the red light in the ambient light from irradiating the transistor in the pixel driving circuit 300.
[0069] Here, the light blocking layer 500 in the display panel 000 is located on the side of the light reflecting layer 400 facing the substrate 100. In this way, the red light in the ambient light passing through the light reflecting layer 400 can be blocked by the light blocking layer 500, and the red light in the ambient light will not irradiate the transistors in the pixel driving circuit 300, so that the electrical performance of the transistors in the pixel driving circuit 300 is better, and thus the display effect of the display panel 000 is better.
[0070] In summary, the display panel provided by the embodiment of the present application includes: a substrate, a reflective layer, a light-blocking layer, a plurality of light-emitting devices and a pixel driving circuit. Among them, the plurality of light-emitting devices may include a plurality of first-type light-emitting devices and a plurality of second-type light-emitting devices. The first electrode in the first-type light-emitting device is reflective, and the first electrode in the second-type light-emitting device is light-transmissive. The reflective layer can reflect the blue light or green light in the direction toward the substrate in the light emitted by the second-type light-emitting device, as well as the blue light and green light in the ambient light entering the second-type light-emitting device, and the red light in the ambient light can pass through the reflective layer. The red light in the ambient light that passes through the reflective layer can be blocked by the light-blocking layer, and the red light in the ambient light will not irradiate the transistor in the pixel driving circuit, so that the electrical performance of the transistor in the pixel driving circuit is better, and thus the display effect of the display panel is better.
[0071] In the present application, in order to ensure that the reflective layer 400 has good reflectivity for the light emitted by the second type light emitting device 220, the orthographic projection of the second type light emitting device 220 on the substrate 100 can be located within the orthographic projection of the reflective layer 400 on the substrate 100, so that the light emitted by the light emitting layer 203 of the second type light emitting device 220 that passes through the first electrode 201 can be reflected by the reflective layer 400. And in order to ensure that the light blocking layer 500 has good blocking ability for the red light in the ambient light, the orthographic projection of the second type light emitting device 220 on the substrate 100 can be located within the orthographic projection of the light blocking layer 500 on the substrate 100, so that the red light in the ambient light can be blocked by the light blocking layer 500 after passing through the first electrode 201 of the second type light emitting device 220 and the reflective layer 400 in sequence.
[0072] In the present application, please refer to Figure 6 , Figure 61 is a schematic diagram of the film structure of the first electrode in a first type of light-emitting device provided in an embodiment of the present application. The first electrode 201 in the first type of light-emitting device 210 may include a reflective electrode 201a, a third transparent electrode 201b electrically connected to the side of the reflective electrode 201a facing the substrate 100, and a fourth transparent electrode 201c electrically connected to the side of the reflective electrode 201a facing away from the substrate 100. The third transparent electrode 201b and the fourth transparent electrode 201c are made of indium tin oxide, and the reflective electrode 201a is made of silver. Among them, indium tin oxide has light transmittance, silver has light reflectivity, and indium tin oxide can improve the work function of silver with light reflectivity, which is beneficial to improving the electrical properties of the first electrode 201 in the first type of light-emitting device 210. The thickness of the third transparent electrode 201b is 5 nanometers to 10 nanometers, the thickness of the reflective electrode 201a is 80 nanometers to 200 nanometers, and the thickness of the reflective electrode 201a is 10 nanometers to 50 nanometers. The first electrode 201 in the second type light emitting device 220 may be made of indium tin oxide, and the thickness of the first electrode 201 in the second type light emitting device 220 is 10 nanometers to 30 nanometers.
[0073] For the first electrode 210 of the first type light emitting device 210, and the connecting electrode S connected to the first electrode 210. Figure 6 As shown, the first electrode 210 of the first type of light emitting device 210 and the connecting electrode S electrically connected to the first electrode 210 are arranged in the same layer and made of the same material. It should be noted that in the present application, two structures are arranged in the same layer and made of the same material means that the film layer where the two structures are located is the same film layer and can be formed simultaneously by the same patterning process.
[0074] For example, the connecting electrode S electrically connected to the first electrode 210 of the first type light-emitting device 210 also includes a three-layer electrode structure, and the three-layer electrode structure is respectively connected to the reflective electrode 201a, the third transparent electrode 201b and the fourth transparent electrode 201c in the first electrode 201 of the first type light-emitting device 210, and belongs to the same conductive layer respectively.
[0075] Thus, during the preparation of the display panel 000 , the connecting electrode S corresponding to the first type light emitting device 210 and the first electrode 201 of the first type light emitting device 210 can be obtained by using only one patterning process, thereby simplifying the preparation process of the display panel 000 .
[0076] For the first electrode 210 of the second type light emitting device 220, and the connecting electrode S connected to the second electrode 220. In a possible case, as Figure 7 As shown, Figure 72 is a schematic diagram of a film structure of another display panel provided in an embodiment of the present application, wherein the connection electrode S connected to the first electrode 201 of the second type light emitting device 220 is arranged in the same layer and made of the same material as the first electrode 201 of the first type light emitting device 210. In this way, the connection resistance between the first electrode 201 of the second type light emitting device 220 and the corresponding pixel driving circuit can be effectively reduced.
[0077] In another possible situation, Figure 8 As shown, Figure 8 This is a schematic diagram of the film layer structure of another display panel provided in an embodiment of the present application. The connecting electrode S connected to the first electrode 201 of the second type light emitting device 220 is arranged in the same layer and made of the same material as the first electrode 201 of the second type light emitting device 220.
[0078] It should be noted that the first electrode 201 of the second type light emitting device 220 can be disposed in the same layer and made of the same material as the third transparent electrode 201b of the first type light emitting device 210. Alternatively, the first electrode 201 of the second type light emitting device 220 can also be disposed in the same layer and made of the same material as the fourth transparent electrode 201c of the first type light emitting device 210. This embodiment of the present application is not limited to this.
[0079] In the embodiment of the present application, the reflective layer 400 in the display panel 000 can be a film layer structure arranged in a whole layer. That is, in the process of preparing the reflective layer 400, only a film forming process is required, and no patterning process is required. In this way, the preparation cost of the display panel 000 can be effectively reduced. In this case, the orthographic projection of each light-emitting device 200 in the display panel 000 on the substrate 100 can be located within the orthographic projection of the reflective layer 400 on the substrate 100.
[0080] The light blocking layer 500 in the display panel 000 has a variety of possible design methods, and the present application takes the following two possible design methods as examples for description:
[0081] In the first possible design, Figure 7 and Figure 8 As shown, the orthographic projection of the light blocking layer 500 on the substrate 100 in the display panel 000 is located within the orthographic projection of the light reflecting layer 400 on the substrate 100 , and the light blocking layer 500 at least includes a metal light blocking layer 510 made of a metal material.
[0082] In this case, the metal light-blocking layer 510 in the light-blocking layer 500 can block the red light in the ambient light that passes through the light-reflecting layer 400, and the red light in the ambient light will not be irradiated on the transistor in the pixel driving circuit 300, so that the display effect of the display panel 000 is better. Here, in order to make the metal light-blocking layer 510 block the red light in the ambient light better, the orthographic projection of the light-emitting device 200 on the substrate 100 is located within the orthographic projection of the metal light-blocking layer 510 on the substrate 100. For example, in the direction parallel to the substrate 100, the width of the metal light-blocking layer 510 protruding relative to the light-emitting device 200 can be 2 microns to 4 microns.
[0083] In the present application, the display panel 000 also includes a metal pattern layer, which is located on the side of the reflective layer 400 facing the substrate 100. The metal pattern layer includes a metal light-blocking layer 510. It should be noted that the display panel 000 has multiple conductive layers inside, and at least part of the conductive layers are made of metal materials. These conductive layers can form a circuit part in the display panel 000, for example, a pixel driving circuit 300. Here, the metal pattern layer including the metal light-blocking layer 510 can be a conductive layer inside the display panel 000. The embodiments of the present application will be schematically described by taking the following two possible situations as examples:
[0084] The first possible situation is Figure 7 and Figure 8 As shown, the display panel 000 may further include: a plurality of auxiliary transfer electrodes 800 electrically connected to the plurality of pixel driving circuits 300. The plurality of auxiliary transfer electrodes 800 correspond to the plurality of light emitting devices 200, and the auxiliary transfer electrodes 800 are electrically connected to the first electrodes 201 in the corresponding light emitting devices 200. Exemplarily, the auxiliary transfer electrodes 800 may be electrically connected to the first electrodes 201 in the corresponding light emitting devices 200 through the connecting electrodes S. In this case, the metal pattern layer includes a plurality of auxiliary transfer electrodes 800 and a metal light blocking layer 510.
[0085] That is, the plurality of auxiliary transfer electrodes 800 and the metal light blocking layer 510 are disposed in the same layer and made of the same material. Thus, in the manufacturing process of the display panel 000, only one patterning process is required to obtain the metal light blocking layer 510 and the auxiliary transfer electrodes 800, thereby simplifying the manufacturing process of the display panel 000.
[0086] For example, the metal light blocking layer 510 and the auxiliary transfer electrode 800 may be made of materials such as molybdenum, titanium, aluminum or copper, and have a thickness of 50 nanometers to 200 nanometers.
[0087] It should be noted that if Figure 7 and Figure 8As shown, the display panel 000 further includes an organic planar layer 700. The organic planar layer 700 is located on the side of the pixel driving circuit 300 away from the substrate 100, so that the organic planar layer 700 can planarize the side of the pixel driving circuit 300 away from the substrate 100, so as to ensure that the light-emitting device 200 formed on the organic planar layer 700 can be better formed later. Here, the metal light-blocking layer 510 can be located on the side of the organic planar layer 700 away from the substrate 100. That is, the organic planar layer 700 can be distributed between the pixel driving circuit 300 and the metal light-blocking layer 510. By arranging a thicker organic planar layer 700 between the pixel driving circuit 300 and the metal light-blocking layer 510, the parasitic capacitance generated between the metal light-blocking layer 310 and the pixel driving circuit 300 can be reduced, so that the pixel driving circuit 300 can drive the light-emitting device 200 to emit light more stably, thereby further improving the display effect of the display panel 000. Exemplarily, the thickness of the organic planar layer 700 can be 0.6 microns to 3 microns.
[0088] The organic planar layer 700 has a plurality of first via holes V1, and the plurality of auxiliary transfer electrodes 800 correspond to the plurality of first via holes V1. The auxiliary transfer electrodes 800 can be electrically connected to the corresponding pixel driving circuit 300 through the corresponding first via holes V1. The reflective layer 400 has a plurality of second via holes V2, and the plurality of second via holes V2 correspond to the plurality of first via holes V1 in the organic planar layer 700, and the second via holes V2 are connected to the corresponding first via holes V1, and the auxiliary transfer electrodes 800 can be electrically connected to the corresponding connection electrodes S through the corresponding second via holes V2. In this way, the connection electrode S connected to the first electrode 201 in the light-emitting device 200 can be electrically connected to the corresponding auxiliary transfer electrode 800 through the first via holes V1.
[0089] Here, since the depth of the connecting first via hole V1 and the second via hole V2 is relatively large, if the light emitting device 200 and the corresponding pixel driving circuit 300 are connected only by the connecting electrode S, there is a greater risk of the connecting electrode S being broken. However, the connecting electrode S is formed after the auxiliary transfer electrode 800, so that the distance between the side of the connecting electrode S close to the substrate 100 and the side of the connecting electrode S away from the substrate 100 is reduced, thereby effectively reducing the risk of the connecting electrode S being broken.
[0090] The orthographic projection of the first via hole V1 on the substrate 100 is located within the orthographic projection of the corresponding auxiliary transfer electrode 800 on the substrate 100, that is, a portion of the auxiliary transfer electrode 800 is located within the corresponding first via hole V1, and the other portion is located on the side of the organic planar layer 700 away from the substrate 100, so that the connection area between the auxiliary transfer electrode 800 and the connection electrode S is larger, and thus the connection effect between the auxiliary transfer electrode 800 and the connection electrode S is better. For example, in the direction parallel to the substrate 100, the protruding width of the auxiliary transfer electrode 800 relative to the first via hole V1 can be 2 microns to 5 microns.
[0091] In addition, the angle between the side wall of the first via hole V1 and the side of the organic planar layer 700 facing the substrate 100 is an acute angle, and the angle between the side wall of the second via hole V2 and the side of the light reflecting layer 400 facing the substrate 100 is an acute angle, thereby reducing the risk of breaking the connecting electrode S. For example, the angle between the side wall of the first via hole V1 and the side of the organic planar layer 700 facing the substrate 100 is 40° to 60°, and the angle between the side wall of the second via hole V2 and the side of the light reflecting layer 400 facing the substrate 100 is 40° to 60°.
[0092] Optional, such as Figure 7 and Figure 8 As shown, the metal pattern layer including the auxiliary switching electrode 800 and the metal light blocking layer 510 may also include: an auxiliary light blocking layer 540. That is, the auxiliary switching electrode 800, the metal light blocking layer 510 and the auxiliary light blocking layer 540 are arranged in the same layer and made of the same material. Among them, the orthographic projection of the first type light emitting device 210 on the substrate 100 is located within the orthographic projection of the auxiliary light blocking layer 540 on the substrate 100. In this way, even if the first electrode 201 of the first type light emitting device 210 has a certain transmittance, it can be ensured that the ambient light passing through the first electrode 201 of the first type light emitting device 210 is blocked by the auxiliary light blocking layer 540, so as to ensure that the electrical performance of the transistor in the pixel driving circuit 300 electrically connected to the first type light emitting device 210 is good.
[0093] The second possible situation is Fig. 9 As shown, Fig. 9 2 is a schematic diagram of a film structure of another display panel provided in an embodiment of the present application. The metal pattern layer includes the reflective electrode 201a and the metal light blocking layer 510 in the first type of light emitting device 210. That is, the reflective electrode 201a and the metal light blocking layer 510 in the first type of light emitting device 210 are arranged in the same layer and made of the same material.
[0094] In this case, please refer to Fig.10 , Fig.10Schematic diagram of the film structure of a light-blocking layer provided in an embodiment of the present application. The light-blocking layer 500 in the display panel 000 also includes: a first transparent electrode 520 electrically connected to the side of the metal light-blocking layer 510 facing the substrate 100, and a second transparent electrode 530 electrically connected to the side of the metal light-blocking layer 320 facing away from the substrate 100. The light-blocking layer 500 can serve as a connecting electrode S of the second type of light-emitting device 220, so that the first electrode 201 in the second type of light-emitting device 220 is electrically connected to the second transparent electrode 530.
[0095] Among them, the first transparent electrode 520 is disposed in the same layer and made of the same material as the third transparent electrode 201b in the first type of light emitting device 210; the second transparent electrode 530 is disposed in the same layer and made of the same material as the fourth transparent electrode 201c in the first type of light emitting device 210; and the metal light blocking layer 510 is disposed in the same layer and made of the same material as the reflective electrode 201a in the first type of light emitting device 210. In this way, in the manufacturing process of the display panel 000, the first electrode 201 and the light blocking layer 500 of the first type of light emitting device 210 can be obtained by using only one patterning process, thereby simplifying the manufacturing process of the display panel 000.
[0096] It should be noted that if Fig. 9 As shown, the first electrode 201 in the first type light emitting device 210 further includes: a transparent auxiliary transfer electrode 900 electrically connected to the side of the fourth transparent electrode 201c away from the substrate 100. The transparent auxiliary transfer electrode 900 is arranged in the same layer and made of the same material as the first electrode 201 in the second type light emitting device 220. In this way, during the preparation process of the display panel 000, the transparent auxiliary transfer electrode 900 and the first electrode 201 in the second type light emitting device 220 can be obtained by using only one patterning process, which simplifies the preparation process of the display panel 000.
[0097] In the embodiment of the present application, the display panel 000 further includes: a first transparent conductive layer, a second transparent conductive layer and a pixel definition layer 600. The first transparent conductive layer includes a second transparent electrode 530 and a fourth transparent electrode 201c, and the second transparent conductive layer includes a transparent auxiliary transfer electrode 900 and a first electrode 201 in the second type of light emitting device 220.
[0098] The reflective layer 400 in the display panel 000 is located on the side of the first transparent conductive layer away from the substrate 100 , the second transparent conductive layer is located on the side of the reflective layer 400 away from the substrate 100 , and the pixel definition layer 600 is located on the side of the second transparent conductive layer 330 away from the substrate 100 .
[0099] In this case, the pixel definition layer 600 in the display panel 000 has: a first type of pixel opening K1 corresponding to the first type of light-emitting device 210, and a second type of pixel opening K2 corresponding to the second type of light-emitting device 220. At least part of the first type of light-emitting device 210 is located in the first type of pixel opening K1, and at least part of the second type of light-emitting device 220 is located in the second type of pixel opening K2. Here, the pixel definition layer 600 can be made of a black light-absorbing material, and can absorb part of the ambient light entering the display panel 000. Exemplarily, the thickness of the pixel definition layer 600 can be 1 micron to 3 microns. The reflective layer 400 in the display panel 000 has: a first auxiliary opening K3 corresponding to the first type of light-emitting device 210, and a second auxiliary opening K4 corresponding to the second type of light-emitting device 220.
[0100] For the first-type pixel opening K1 and the first auxiliary opening K3 corresponding to the same first-type light-emitting device 210, the first-type pixel opening K1 is connected to the first auxiliary opening K3, and at least part of the first-type light-emitting device 210 is located in the connected first-type pixel opening K1 and the first auxiliary opening K3; for the second-type pixel opening K2 and the second auxiliary opening K4 corresponding to the same second-type light-emitting device 220, the orthographic projection of the second-type pixel opening K2 on the substrate 100 does not overlap with the orthographic projection of the second auxiliary opening K4 on the substrate 100.
[0101] It should be noted that, in the process of forming the first auxiliary opening K3, the fourth transparent electrode 201c of the first type light emitting device 210 can be used as an etching barrier layer to prevent over-etching and ensure that the reflective electrode 201a has a good reflective effect. In addition, the transparent auxiliary transfer electrode 900 can ensure that the fourth transparent electrode 201c of the first type light emitting device 210 will not be damaged during the etching process, thereby reducing the impact of etching on the performance of the first electrode 201 of the first type light emitting device 210.
[0102] It should also be noted that, due to the thick film layer of the reflective layer 400, the area of the orthographic projection of the second auxiliary opening K4 on the substrate 100 can be larger than the area of the orthographic projection of the second type pixel opening K2 on the substrate 100, and the angle between the side wall of the second auxiliary opening K4 and the side of the reflective layer 400 facing the substrate 100 is an acute angle, thereby reducing the risk of the electrode connecting the first electrode 201 of the second type light-emitting device 220 and the connecting electrode S being broken. For example, in the direction parallel to the substrate 100, the width of the second auxiliary opening K4 is 2 to 5 microns greater than the width of the second type pixel opening K2. The angle between the side wall of the second auxiliary opening K4 and the side of the reflective layer 400 facing the substrate 100 is 40° to 60°.
[0103] In this application, if Fig. 9As shown, the reflective electrode 201a and the second electrode 202 in the first type light emitting device 210 can form a microcavity structure, and the second electrode 202 and the corresponding light blocking portion 300 of the second type light emitting device 220 can form a microcavity structure. In this case, the second electrode 202 is a semi-transmissive and semi-reflective electrode.
[0104] In the first type of light emitting device 210, a portion of the light emitted by the light emitting layer 203 of the first type of light emitting device 210 and directed toward the second electrode 202 can be emitted after passing through the second electrode 202, and the other portion of the light can be reflected by the second electrode 202. The light reflected by the second electrode 202 and the light emitted by the light emitting layer 203 of the first type of light emitting device 210 and directed toward the first electrode 201 can be reflected toward the second electrode 202 by the reflective electrode 201a in the first electrode 201. In this way, the light reflected by the reflective electrode 201a and the light emitted by the light emitting layer 203 and directed toward the second electrode 202 can produce a coherently enhanced microcavity effect, thereby improving the light extraction efficiency of the first type of light emitting device 210 and making the display effect of the display panel 000 better.
[0105] Similarly, a portion of the light emitted by the light-emitting layer 203 of the second type light-emitting device 220 that is directed toward the second electrode 202 can be emitted after passing through the second electrode 202, and another portion of the light can be reflected by the second electrode 202. The light reflected by the second electrode 202 and the light emitted by the light-emitting layer 203 of the second type light-emitting device 220 that is directed toward the first electrode 201 can pass through the first electrode 201 and then be directed toward the reflective layer 400, and the reflective layer 400 can reflect these light rays toward the second electrode 202. In this way, the light reflected by the reflective layer 400 and the light emitted by the light-emitting layer 203 that is directed toward the second electrode 202 can produce a coherently enhanced microcavity effect, thereby improving the light extraction efficiency of the second type light-emitting device 220, and making the display effect of the display panel 000 better.
[0106] It should be noted that the cavity length of the microcavity structure of the first type of light emitting device 210 in the display panel 000 is: the distance between the reflective electrode 201a and the second electrode 202 in the first type of light emitting device 210. The cavity length of the microcavity structure of the second type of light emitting device 220 in the display panel 000 is: the distance between the second electrode 202 of the second type of light emitting device 220 and the reflective layer 400. Since the cavity length of the microcavity structure is affected by the wavelength of the light emitted by the light emitting device 200, the cavity length of the microcavity structure can be adjusted so that the microcavity structure corresponding to the light emitting device 200 can produce a coherently enhanced microcavity effect for the light of a specific wavelength emitted by the light emitting device 200.
[0107] When the wavelength of light emitted by the first type of light-emitting device 210 is different from the wavelength of light emitted by the second type of light-emitting device 220, the cavity lengths of the first type of light-emitting device 210 and the second type of light-emitting device 220 can be set to be different, so that the cavity length of the microcavity structure better matches the wavelength of light emitted by the light-emitting device 200.
[0108] For example, Fig. 9 As shown, when the light emitted by the first type light emitting device 210 is red light and the light emitted by the second type light emitting device 220 is green light or blue light, the cavity length of the microcavity structure of the first type light emitting device 210 is larger, which can better match the light with a longer wavelength emitted by the first type light emitting device 210; the cavity length of the microcavity structure of the second type light emitting device 220 is smaller, which can better match the light with a shorter wavelength emitted by the second type light emitting device 220; thereby enhancing the microcavity effect of the display panel 000 and improving the light extraction efficiency of the display panel 000.
[0109] It should also be noted that the light-emitting layer 203 of the light-emitting device 200 includes a hole transport layer, and the thickness of the hole transport layer can be adjusted to adjust the cavity length of the microcavity structure of each type of light-emitting device 200. In the microcavity structure, light can form a standing wave in the continuous reflection, and the first enhancement point of the standing wave formed in the microcavity structure is located in the hole transport layer.
[0110] In addition, the light-emitting layer 203 of the light-emitting device 200 further includes a hole injection layer. In the second type of light-emitting device 220, the hole injection layer of the light-emitting device 200 for emitting green light and the hole injection layer of the light-emitting device 200 for emitting blue light are arranged in the same layer and made of the same material. The hole transport layer of the light-emitting device 200 for emitting green light and the hole transport layer of the light-emitting device 200 for emitting blue light are arranged in the same layer and made of the same material.
[0111] The above embodiments are schematically described by taking the metal light blocking layer 510 and the auxiliary transfer electrode 800 being disposed in the same layer and made of the same material as an example, and taking the metal light blocking layer 510 and the reflective electrode 201a0 being disposed in the same layer and made of the same material as an example. In other possible implementations, the metal light blocking layer 510 may also be disposed in the same layer and made of the same material as the source and drain in the transistor, or may be disposed in the same layer and made of the same material as the gate in the transistor. This application is not limited to this.
[0112] For the second possible design, please refer to Fig.11 , Fig.11000 is a schematic diagram of a film layer structure of a display panel provided in another embodiment of the present application. The light-blocking layer 500 in the display panel 000 is a film layer structure arranged in a whole layer. That is, in the process of preparing the light-blocking layer 500, only a film-forming process is required, and no patterning process is required. In this way, the preparation cost of the display panel 000 can be effectively reduced. And in this case, the orthographic projection of each light-emitting device 200 in the display panel 000 on the substrate 100 can be located within the orthographic projection of the light-blocking layer 500 on the substrate 100.
[0113] In the embodiment of the present application, when the light blocking layer 500 in the display panel 000 is a film layer structure provided in a whole layer, the light blocking layer 500 has multiple optional implementations. The present application takes the following two optional implementations as examples for schematic illustration:
[0114] The first optional implementation method is Fig.11 As shown, the light blocking layer 500 in the display panel 000 is made of an organic material having light absorption property; or, the light blocking layer 500 in the display panel 000 is made of an organic material doped with scattering particles.
[0115] In the case where the light blocking layer 500 is made of an organic material having light absorption, the ambient light passing through the light reflecting layer 400 may be absorbed by the light blocking layer 500 .
[0116] In the case where the light-blocking layer 500 is made of an organic material doped with scattering particles, the ambient light passing through the light-reflecting layer 400 can be absorbed or scattered by scattering materials such as titanium dioxide after entering the light-blocking layer 500. The scattering material can disperse the energy of the light in all directions, thereby reducing the intensity and penetration of the light, so that the propagation of the light is hindered to a certain extent. In this way, the red light in the ambient light passing through the light-reflecting layer 400 can be blocked by the light-blocking layer 500, and the red light in the ambient light will not be irradiated on the transistors in the pixel driving circuit 300, so that the electrical performance of the transistors in the pixel driving circuit 300 is better, and thus the display effect of the display panel 000 is better.
[0117] It should be noted that the display panel 000 includes an organic planar layer 700. In a possible case, Fig.11 As shown, the organic planar layer 700 may be located on the side of the light blocking layer 500 facing the substrate 100. In another possible case, as shown in FIG. Fig.12 As shown, Fig.12000 is a schematic diagram of a film structure of another display panel provided by another embodiment of the present application, and the organic planar layer 700 may be located on the side of the light blocking layer 500 away from the substrate 100. When the display panel 000 includes the organic planar layer 700, the thickness of the light blocking layer 500 is 0.5 microns to 1.5 microns, and the thickness of the organic planar layer 700 is 0.5 microns to 1.5 microns.
[0118] It should be noted that in other possible implementations, such as Fig.13 As shown, Fig.13 000 is a schematic diagram of a film layer structure of another display panel provided by another embodiment of the present application. Since the light blocking layer 500 is made of an organic material, it has a certain flatness. Therefore, the light blocking layer 500 and the organic flat layer in the display panel 000 can be reused as the same film layer. In this case, the thickness of the light blocking layer 500 is 0.7 microns to 3 microns. In this way, there is no need to separately set an additional organic flat layer, the thickness of the display panel 000 can be reduced, and the preparation cost of the display panel 000 can be reduced.
[0119] For the second optional implementation, please refer to Fig.14 , Fig.14 The light blocking layer 500 in the display panel 000 includes a plurality of first inorganic layers 501 and a plurality of second inorganic layers 502 stacked in layers, and the plurality of first inorganic layers 501 and the plurality of second inorganic layers 502 are arranged alternately.
[0120] That is, the light-blocking layer 500 in the display panel 000 may be a distributed Bragg reflector. A second inorganic layer 502 is distributed between two adjacent first inorganic layers 501, and a first inorganic layer 501 is distributed between two adjacent second inorganic layers 502. In the light-blocking layer 500, the adjacent first inorganic layer 501 and the second inorganic layer 502 together form a light-blocking layer group 500a, and the number of light-blocking layer groups 500a in the light-blocking layer 500 may be 4 to 10 groups.
[0121] In the same light-blocking layer group 500a, the first inorganic layer 501 is closer to the substrate 100 than the second inorganic layer 502. The light-blocking layer group 500a in the light-blocking layer 500 is composed of an inorganic layer with a higher refractive index and an inorganic layer with a lower refractive index, that is, when the refractive index of the first inorganic layer 501 is higher, the refractive index of the second inorganic layer 502 is lower; when the refractive index of the first inorganic layer 501 is lower, the refractive index of the second inorganic layer 502 is higher. For example, the difference between the refractive index of the first inorganic layer 501 and the refractive index of the second inorganic layer 502 can be between 0.7 and 1.1, and the light-blocking layer 500 can be made of any two materials selected from silicon dioxide, titanium dioxide, and niobium pentoxide.
[0122] In this way, the light-blocking layer 500 in the display panel 000 is used to reflect light of the same color as the light emitted by the first type of light-emitting device 210. That is, the light-blocking layer 500 in the display panel 000 can reflect light of red color. To this end, after the red light in the ambient light passes through the reflective layer 400, the light-blocking layer 500 can reflect the red light in the ambient light, and then the red light in the ambient light will not irradiate the transistor in the pixel driving circuit 300, so that the display effect of the display panel 000 is better.
[0123] In this case, the display panel 000 includes an organic flat layer 700, and the organic flat layer 700 is located on the side of the light blocking layer 500 facing the substrate 100. In this way, the flatness of the light reflecting layer 400 and the light blocking layer 500 can be guaranteed, so that the light reflecting layer 400 can better reflect blue light and green light, and the light blocking layer 500 can better reflect red light.
[0124] It should be noted that, when the orthographic projections of the first type light emitting device 210 and the second type light emitting device 220 on the substrate 100 in the display panel 000 are both located within the orthographic projection of the light reflecting layer 400 on the substrate 100, and are both located within the orthographic projection of the light blocking layer 500 on the substrate 100, the light reflecting layer 400 and the light blocking layer 500 can not only reflect or block the ambient light transmitted through the first electrode 201 of the second type light emitting device 220, but also reflect or block the ambient light transmitted through the first electrode 201 of the first type light emitting device 220 when the first electrode 201 of the first type light emitting device 210 has a certain transmittance. In this way, it can be ensured that the electrical performance of the transistors in each pixel driving circuit 300 is good.
[0125] It should also be noted that the above embodiments are schematically illustrated by taking the pixel definition layer 600 as being made of a black light-absorbing material as an example, and in the case where the light-reflecting layer 400 and the light-blocking layer 500 in the display panel 000 are both provided as a whole layer, the pixel definition layer 600 can also be made of a transparent material. In this case, the orthographic projections of the various pixel driving circuits 300 in the display panel 000 on the substrate 100 are all located within the orthographic projections of the light-reflecting layer 400 on the substrate 100, and are all located within the orthographic projections of the light-blocking layer 500 on the substrate 100. Even if the ambient light can pass through the pixel definition layer 600, it can be reflected by the light-reflecting layer 400 or blocked by the light-blocking layer 500.
[0126] In summary, the display panel provided by the embodiment of the present application includes: a substrate, a reflective layer, a light-blocking layer, a plurality of light-emitting devices and a pixel driving circuit. Among them, the plurality of light-emitting devices may include a plurality of first-type light-emitting devices and a plurality of second-type light-emitting devices. The first electrode in the first-type light-emitting device is reflective, and the first electrode in the second-type light-emitting device is light-transmissive. The reflective layer can reflect the blue light or green light in the direction toward the substrate in the light emitted by the second-type light-emitting device, as well as the blue light and green light in the ambient light entering the second-type light-emitting device, and the red light in the ambient light can pass through the reflective layer. The red light in the ambient light that passes through the reflective layer can be blocked by the light-blocking layer, and the red light in the ambient light will not irradiate the transistor in the pixel driving circuit, so that the electrical performance of the transistor in the pixel driving circuit is better, and thus the display effect of the display panel is better.
[0127] The embodiment of the present application also provides a display device, which may include: a display panel and a driver chip, the display panel is the above-mentioned display panel, and the driver chip is used to apply a driving signal to the display panel. The display device may be: a mobile phone, a tablet computer, a television, a monitor, a laptop computer, a digital photo frame, a navigator, or any other product or component with a display function.
[0128] It should be noted that in the accompanying drawings, the sizes of layers and regions may be exaggerated for clarity of illustration. It is also understood that when an element or layer is referred to as being "on" another element or layer, it may be directly on the other element, or there may be an intermediate layer. In addition, it is understood that when an element or layer is referred to as being "under" another element or layer, it may be directly under the other element, or there may be more than one intermediate layer or element. In addition, it is also understood that when a layer or element is referred to as being "between" two layers or two elements, it may be the only layer between the two layers or two elements, or there may also be more than one intermediate layer or element. Similar reference numerals throughout the text indicate similar elements.
[0129] In the present application, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance. The term "plurality" refers to two or more than two, unless otherwise clearly defined.
[0130] The above description is only an optional embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application shall be included in the protection scope of the present application.
Claims
1. A display panel, characterized in that: include: A substrate, a light reflecting layer, a light blocking layer and a plurality of light emitting devices; The plurality of light-emitting devices are distributed on one side of the substrate, each of the light-emitting devices has a first electrode and a second electrode arranged opposite to each other, and the first electrode is closer to the substrate than the second electrode; The plurality of light-emitting devices include a plurality of first-type light-emitting devices and a plurality of second-type light-emitting devices, and the first electrodes in the first-type light-emitting devices have different reflectivities and / or transmittances from the first electrodes in the second-type light-emitting devices; The reflective layer is located on a side of the plurality of second-type light-emitting devices facing the substrate; The light blocking layer is located on a side of the light reflecting layer facing the substrate.
2. The display panel according to claim 1, characterized in that: The orthographic projection of the light-blocking layer on the substrate is located within the orthographic projection of the light-reflecting layer on the substrate; and the light-blocking layer at least includes a metal light-blocking layer made of a metal material.
3. The display panel according to claim 2, characterized in that: The display panel further comprises: a metal pattern layer, the metal pattern layer being located on a side of the reflective layer facing the substrate; Wherein, the metal pattern layer includes the metal light-blocking layer.
4. The display panel according to claim 3, characterized in that: The display panel further includes: a plurality of pixel driving circuits, and a plurality of auxiliary switching electrodes electrically connected to the plurality of pixel driving circuits; the plurality of auxiliary switching electrodes correspond to the plurality of light emitting devices, and the auxiliary switching electrodes are electrically connected to the first electrodes in the corresponding light emitting devices; Wherein, the metal pattern layer includes the plurality of auxiliary switching electrodes and the metal light blocking layer.
5. The display panel according to claim 3, characterized in that: The first electrode in the first type of light emitting device comprises: a reflective electrode; Wherein, the metal pattern layer includes the reflective electrode and the metal light-blocking layer.
6. The display panel according to claim 4, characterized in that: The light-blocking layer further comprises: a first transparent electrode electrically connected to the side of the metal light-blocking layer facing the substrate, and a second transparent electrode electrically connected to the side of the metal light-blocking layer facing away from the substrate; the first electrode in the second type of light-emitting device is electrically connected to the second transparent electrode; The first electrode in the first type of light emitting device further includes: a third transparent electrode electrically connected to a side of the reflective electrode facing the substrate, and a fourth transparent electrode electrically connected to a side of the reflective electrode facing away from the substrate; The first transparent electrode and the third transparent electrode are arranged in the same layer and made of the same material; the second transparent electrode and the fourth transparent electrode are arranged in the same layer and made of the same material.
7. The display panel according to claim 6, characterized in that: The first electrode in the first type of light emitting device further includes: a transparent auxiliary transfer electrode electrically connected to a side of the fourth transparent electrode away from the substrate; Wherein, the transparent auxiliary switching electrode is arranged in the same layer and made of the same material as the first electrode in the second type of light-emitting device.
8. The display panel according to claim 7, characterized in that: The display panel further includes: a first transparent conductive layer, a second transparent conductive layer and a pixel definition layer; the first transparent conductive layer includes the second transparent electrode and the fourth transparent electrode, and the second transparent conductive layer includes the transparent auxiliary transfer electrode and the first electrode in the second type of light emitting device; The light reflecting layer is located on a side of the first transparent conductive layer away from the substrate, the second transparent conductive layer is located on a side of the light reflecting layer away from the substrate, and the pixel definition layer is located on a side of the second transparent conductive layer away from the substrate; The pixel definition layer has: a first type of pixel opening corresponding to the first type of light-emitting device, and a second type of pixel opening corresponding to the second type of light-emitting device; the reflective layer has: a first auxiliary opening corresponding to the first type of light-emitting device, and a second auxiliary opening corresponding to the second type of light-emitting device; Among them, for the first type of pixel openings and the first auxiliary openings corresponding to the same first type of light-emitting device, the first type of pixel openings are connected to the first auxiliary openings; for the second type of pixel openings and the second auxiliary openings corresponding to the same second type of light-emitting device, the orthographic projection of the second type of pixel openings on the substrate does not overlap with the orthographic projection of the second auxiliary openings on the substrate.
9. The display panel according to claim 1, characterized in that: The light blocking layer is a film layer structure arranged in an entire layer.
10. The display panel according to claim 9, characterized in that: The light-blocking layer is made of an organic material having light absorption property; or, the light-blocking layer is made of an organic material doped with scattering particles.
11. The display panel according to claim 10, characterized in that: The light blocking layer and the organic flat layer in the display panel are multiplexed into a same film layer; Alternatively, the display panel further includes an organic planar layer, and the organic planar layer is located on a side of the light-blocking layer facing the substrate, or on a side of the light-blocking layer facing away from the substrate.
12. The display panel according to claim 9, characterized in that: The light blocking layer comprises a plurality of first inorganic layers and a plurality of second inorganic layers stacked in layers, wherein the plurality of first inorganic layers and the plurality of second inorganic layers are arranged alternately; The light-blocking layer is used to reflect light of the same color as the light emitted by the first type of light-emitting device.
13. The display panel according to any one of claims 1 to 12, characterized in that: The light reflecting layer comprises a plurality of third inorganic layers and a plurality of fourth inorganic layers stacked in layers, wherein the plurality of first inorganic layers and the plurality of second inorganic layers are arranged alternately; Wherein, the reflective layer is used to reflect the light emitted by the second type of light-emitting device.
14. The display panel according to any one of claims 1 to 12, characterized in that: The orthographic projection of the second type of light emitting device on the substrate is located within the orthographic projection of the light reflecting layer on the substrate, and the orthographic projection of the second type of light emitting device on the substrate is located within the orthographic projection of the light blocking layer on the substrate.
15. A display device, characterized in that: include: A display panel and a driving chip, wherein the display panel is the display panel according to any one of claims 1 to 14, and the driving chip is used to apply a driving signal to the display panel.