A fabrication process for a current-mode dual-gate modulated unidirectional junction-cut-off composite light-emitting device

Abstract

This invention discloses a fabrication process for a current-mode dual-gate modulated unidirectional junction-cut-off composite light-emitting device, comprising: fabricating a first electrode, a first gate modulation electrode, and a second gate modulation electrode on a substrate; fabricating a first transport layer on the first electrode; fabricating a first modulation layer on the first transport layer and the first gate modulation electrode; fabricating a second transport layer on the first modulation layer; fabricating a light-emitting functional layer on the second transport layer; fabricating a third transport layer on the light-emitting functional layer, and fabricating a second modulation layer on the third transport layer and the second gate modulation electrode; fabricating a fourth transport layer on the second modulation layer, and fabricating a second electrode on the fourth transport layer. The transport layers and modulation layers on the same side have opposite charge polarities, so that when a corresponding voltage is applied to the modulation electrode, the carrier mobility between the transport layers on the same side can be adjusted, thereby adjusting the luminous efficiency and / or luminous brightness of the light-emitting device. The light-emitting device of this invention allows for flexible and efficient gate modulation.

Description

Technical Field

[0001] This invention relates to the field of optoelectronic displays, and in particular to a fabrication process for a current-driven dual-gate modulated unidirectional junction-cut-off composite light-emitting device. Background Technology

[0002] Light-emitting devices (LEDs) are a crucial component of optoelectronic displays, emitting light to display images or information. Many LEDs operate on the principle that, when an electric current is applied, electrons and holes recombine in the light-emitting layer to form excitons. These excitons recombine, releasing energy and emitting light, as seen in QLEDs (quantum dot light-emitting diodes) and OLEDs (organic light-emitting diodes). These devices offer advantages such as rich color reproduction, high contrast, fast response times, wide viewing angles, and energy efficiency. However, due to manufacturing processes and material properties, there is a natural and persistent difference in the mobility of electrons and holes, leading to a severe imbalance of charge carriers in the light-emitting layer. This imbalance not only makes it difficult for free-state charge carriers to recombine efficiently, but also negatively impacts the overall light-emitting performance of the device. Optimal device efficiency is typically achieved by combining different functional layers with quantum dots, a process that requires significant time, material, and human resources.

[0003] Therefore, gate modulation has emerged. By controlling the gate, a built-in electric field can be constructed within these light-emitting devices, enabling the regulation of carrier mobility and thus controlling luminous efficiency, thereby improving luminous efficiency. However, in existing technologies, carrier conduction or electric field shielding can occur during current injection or the construction of the built-in electric field, affecting the effective injection of regulated carriers and resulting in inefficient modulation. Furthermore, existing gate modulation technologies are generally single-ended, which makes it difficult to simultaneously adjust luminous efficiency and brightness, thus lacking flexibility. Therefore, there is currently a lack of a gate-based light-emitting device and corresponding fabrication process that allows for efficient and flexible modulation. Summary of the Invention

[0004] In view of the above-mentioned deficiencies of the prior art, the technical problem to be solved by the present invention is to provide a fabrication process for a current-mode dual-gate modulated unidirectional junction-cut-off composite light-emitting device, aiming to provide a highly efficient and flexible gate-modulated light-emitting device and its fabrication process.

[0005] To achieve the above objectives, this invention discloses a fabrication process for a current-mode dual-gate modulated unidirectional junction-cut-off composite light-emitting device, the process comprising:

[0006] Step S1: Deposit a first conductive layer on the substrate, and perform photolithography on the first conductive layer to form a first electrode, a first gate control electrode, and a second gate control electrode;

[0007] Step S2: A first type A carrier material layer is deposited on the first electrode by thin film deposition, and the first type A carrier material layer is photolithographically formed to form a first transport layer covering the first electrode;

[0008] Step S3: A first type B carrier material layer is deposited on the first transport layer and the first gate control electrode by thin film deposition, and the first type B carrier material layer is photolithographically etched to form a first control layer on the first transport layer and the first gate control electrode; wherein, the type A carrier and the type B carrier carry opposite charges;

[0009] Step S4: A second type A carrier material layer is deposited on the first control layer by thin film deposition, and the second type A carrier material layer is photolithographically etched to form a second transport layer;

[0010] Step S5: According to the type of light-emitting device, prepare a light-emitting functional layer on the second transport layer;

[0011] Step S6: Deposit a second type B charge carrier material layer onto the light-emitting functional layer by thin film deposition, and perform photolithography on the second type B charge carrier material layer to form a third transport layer;

[0012] Step S7: A third type A carrier material layer is deposited on the third transport layer and the second gate control electrode by thin film deposition, and the third type A carrier material layer is photolithographically etched to form a second control layer on the third transport layer and the second gate control electrode;

[0013] Step S8: A third type B carrier material layer is deposited on the second control layer by thin film deposition, and the third type B carrier material layer is photolithographically formed to form a fourth transport layer;

[0014] Step S9: Deposit a second conductive layer on the fourth transport layer, and perform photolithography on the second conductive layer to form a second electrode; wherein, when a corresponding gate voltage is applied to the first gate control electrode, the mobility of the type A carriers between the first and second transport layers is increased, thereby changing the carrier recombination efficiency of the light-emitting functional layer to adjust the luminous efficiency and / or luminous brightness of the light-emitting device; when a corresponding gate voltage is applied to the second gate control electrode, the mobility of the type B carriers between the third and fourth transport layers is increased, thereby changing the carrier recombination efficiency of the light-emitting functional layer to adjust the luminous efficiency and / or luminous brightness of the light-emitting device.

[0015] Optionally, the thickness of the first control layer is less than that of the first transmission layer and the second transmission layer, and the thickness of the second control layer is less than that of the third transmission layer and the fourth transmission layer.

[0016] Optionally, the light-emitting functional layer includes a quantum dot light-emitting layer or an organic light-emitting layer.

[0017] Optionally, when the electron mobility of the light-emitting functional layer is greater than the hole mobility, the first electrode is a cathode, the type A charge carrier is electrons, the second electrode is an anode, and the type B charge carrier is holes, a positive voltage is applied to the first gate control electrode to improve the luminous efficiency of the light-emitting device; a negative voltage is applied to the second gate control electrode to improve the luminous efficiency and luminous brightness of the light-emitting device.

[0018] Optionally, step S5 includes:

[0019] Depending on the type of light-emitting device, the process can be divided into single or multiple film layer preparations, with the light-emitting functional layer formed on the second transport layer.

[0020] Optionally, the thin film deposition includes one of spin coating, spray coating, and vapor deposition.

[0021] Optionally, the photolithography process includes: coating photoresist, exposure, development, and etching.

[0022] The beneficial effects of this invention are as follows: 1. The current-mode dual-gate regulated light-emitting device prepared by this invention can increase the mobility of corresponding charge carriers between the same-side transport layers by applying a corresponding gate voltage to the gate regulation electrode, thereby changing the carrier recombination efficiency of the light-emitting functional layer to adjust the luminous efficiency and / or luminous brightness of the light-emitting device. This invention achieves unidirectional carrier transport while increasing the mobility of corresponding charge carriers through the setting of the regulation layer, avoiding carrier conduction or electric field shielding caused by carrier backflow, thus achieving efficient regulation. 2. The current-mode dual-gate regulated light-emitting device prepared by this invention has two gate regulation electrodes located at opposite ends. One end can regulate the luminous efficiency, and the other end can simultaneously regulate both the luminous efficiency and luminous brightness. By coordinating the gate voltages of the two electrodes, precise simultaneous regulation of luminous efficiency and luminous brightness can be achieved, making gate regulation more flexible. 3. The first electrode, the first gate regulation electrode, and the second gate regulation electrode of this invention are fabricated together, reducing the number of fabrication steps. Furthermore, the first regulation layer covers the first transport layer and the first gate regulation electrode, and the second regulation layer covers the second transport layer and the first gate regulation electrode, reducing the need for insulating layers and simplifying the structure. The preparation process of this invention can effectively reduce preparation steps, simplify the preparation process, and improve preparation efficiency.

[0023] In summary, this invention provides a gate-controlled light-emitting device that can be highly efficient and flexible, as well as its efficient fabrication process. Attached Figure Description

[0024] Figure 1This is a schematic flowchart of the fabrication process of a current-mode dual-gate modulated unidirectional junction current-cutting composite light-emitting device according to a specific embodiment of the present invention;

[0025] Figure 2 This is a schematic diagram of the structure of a current-mode dual-gate modulated light-emitting device according to a specific embodiment of the present invention;

[0026] Figure 3 This is a schematic diagram illustrating the changes in the current-mode dual-gate controlled light-emitting device in step S1 according to a specific embodiment of the present invention;

[0027] Figure 4 This is a schematic diagram illustrating the changes in the current-mode dual-gate controlled light-emitting device in step S2 according to a specific embodiment of the present invention;

[0028] Figure 5 This is a schematic diagram illustrating the changes in the current-mode dual-gate controlled light-emitting device in step S3 according to a specific embodiment of the present invention;

[0029] Figure 6 This is a schematic diagram illustrating the changes in the current-mode dual-gate controlled light-emitting device in step S4 according to a specific embodiment of the present invention;

[0030] Figure 7 This is a schematic diagram illustrating the changes in the current-mode dual-gate controlled light-emitting device in step S5 according to a specific embodiment of the present invention;

[0031] Figure 8 This is a schematic diagram illustrating the changes in the current-mode dual-gate controlled light-emitting device in step S6 according to a specific embodiment of the present invention;

[0032] Figure 9 This is a schematic diagram illustrating the changes in the current-mode dual-gate controlled light-emitting device in step S7 according to a specific embodiment of the present invention;

[0033] Figure 10 This is a schematic diagram illustrating the changes in the current-mode dual-gate controlled light-emitting device in step S8 according to a specific embodiment of the present invention;

[0034] Figure 11 This is a schematic diagram illustrating the changes in the current-mode dual-gate controlled light-emitting device in step S9 of a specific embodiment of the present invention. Detailed Implementation

[0035] This invention discloses a fabrication process for a current-mode dual-gate modulated unidirectional junction-cut-off composite light-emitting device. Those skilled in the art can refer to the content of this document and appropriately modify the technical details to achieve the desired result. It should be particularly noted that all similar substitutions and modifications are obvious to those skilled in the art and are considered to be included in this invention. The methods and applications of this invention have been described through preferred embodiments. Those skilled in the art can clearly modify or appropriately change and combine the methods and applications described herein without departing from the content, spirit, and scope of this invention to implement and apply the technology of this invention.

[0036] The applicant's research revealed that in existing technologies, during current injection or the construction of the built-in electric field, carrier conduction or electric field shielding occurs at the control gate, affecting the effective injection of controllable carriers and resulting in inefficient control. Furthermore, existing gate control technologies are generally single-ended, which makes it difficult to simultaneously adjust luminous efficiency and brightness, thus lacking flexibility. Therefore, there is currently a lack of a gate-emitting device capable of efficient and flexible control, along with a corresponding fabrication process.

[0037] Therefore, embodiments of the present invention provide a fabrication process for a current-mode dual-gate modulated unidirectional junction-cut-off composite light-emitting device, such as... Figure 1 As shown, the process includes:

[0038] Step S1: Deposit a first conductive layer on the substrate, and perform photolithography on the first conductive layer to form a first electrode, a first gate control electrode, and a second gate control electrode.

[0039] It should be noted that the first electrode, the first gate control electrode, and the second gate control electrode can be fabricated using the same conductive material, and therefore can be fabricated at the same layer. This reduces the number of layers in the final light-emitting device, simplifies the structure, reduces fabrication steps, and improves fabrication efficiency.

[0040] In this specific embodiment, the formed current-mode dual-gate modulated light-emitting device structure can be as follows: Figure 2 As shown, it includes: a first electrode 201, a first gate control electrode 202, a second gate control electrode 203, a first transport layer 204, a first control layer 205, a second transport layer 206, a light-emitting functional layer 207, a third transport layer 208, a second control layer 209, a fourth transport layer 210, a second electrode 211, and a substrate 212. Figure 2 As shown, the first control layer 205 simultaneously covers the first transport layer 204 and the first gate control electrode 202, and the second control layer 209 simultaneously covers the third transport layer 208 and the second gate control electrode 203, as follows. Figure 2 The layered structure can prevent the interlayered layers from contacting each other, thus avoiding damage or functional degradation of the light-emitting devices.

[0041] In this specific embodiment, the change in the current-mode dual-gate controlled light-emitting device in step S1 is as follows: Figure 3 As shown.

[0042] Step S2: A first type A carrier material layer is deposited on the first electrode by thin film deposition, and the first type A carrier material layer is photolithographically formed to form a first transport layer covering the first electrode.

[0043] In this specific embodiment, the change in the current-mode dual-gate controlled light-emitting device in step S2 is as follows: Figure 4 As shown.

[0044] Step S3: A first type B carrier material layer is deposited on the first transport layer and the first gate control electrode by thin film deposition, and the first type B carrier material layer is photolithographically etched to form a first control layer on the first transport layer and the first gate control electrode.

[0045] Among them, type A charge carriers and type B charge carriers carry opposite charges.

[0046] In this specific embodiment, the change in the current-mode dual-gate controlled light-emitting device in step S3 is as follows: Figure 5 As shown.

[0047] Step S4: A second type A carrier material layer is deposited on the first control layer by thin film deposition, and the second type A carrier material layer is photolithographically etched to form a second transport layer.

[0048] It should be noted that type A and type B charge carriers are either holes or electrons, and are opposites. This invention utilizes a sandwich structure of type A charge carrier layer-type B charge carrier layer-type A charge carrier layer. When a corresponding voltage is applied to the type B charge carrier layer, type A charge carriers can pass through the type B charge carrier layer, increasing their mobility. Simultaneously, the type B charge carrier layer provides unidirectional transport, preventing the backflow of type A charge carriers and achieving efficient regulation.

[0049] In this specific embodiment, the change in the current-mode dual-gate controlled light-emitting device in step S4 is as follows: Figure 6 As shown.

[0050] Step S5: Prepare a light-emitting functional layer on the second transport layer according to the type of light-emitting device.

[0051] In this specific embodiment, the change in the current-mode dual-gate controlled light-emitting device in step S5 is as follows: Figure 7 As shown.

[0052] In this specific embodiment, the light-emitting functional layer includes a quantum dot light-emitting layer or an organic light-emitting layer.

[0053] In this specific embodiment, step S5 includes:

[0054] Depending on the type of light-emitting device, the process can be divided into single or multiple film layer preparations, with the light-emitting functional layer formed on the second transport layer.

[0055] It should be noted that different light-emitting devices have different numbers and types of light-emitting functional layers. For example, OLEDs include organic light-emitting layers, while QLEDs include quantum dot light-emitting layers. Therefore, the fabrication process must be tailored to specific requirements.

[0056] Step S6: A second type B carrier material layer is deposited on the light-emitting functional layer by thin film deposition, and the second type B carrier material layer is photolithographically etched to form a third transport layer.

[0057] In this specific embodiment, the change in the current-mode dual-gate controlled light-emitting device in step S6 is as follows: Figure 8 As shown.

[0058] Step S7: A third type A carrier material layer is deposited on the third transport layer and the second gate control electrode by thin film deposition, and the third type A carrier material layer is photolithographically etched to form a second control layer on the third transport layer and the second gate control electrode.

[0059] In this specific embodiment, the change in the current-mode dual-gate controlled light-emitting device in step S7 is as follows: Figure 9 As shown.

[0060] Step S8: Deposit a third type B carrier material layer onto the second control layer by thin film deposition, and perform photolithography on the third type B carrier material layer to form the fourth transport layer.

[0061] In this specific embodiment, the change in the current-mode dual-gate controlled light-emitting device in step S8 is as follows: Figure 10 As shown.

[0062] It should be noted that, similar to the sandwich structure of type A carrier layer-type B carrier layer-type A carrier layer, the type B carrier layer-type A carrier layer-type B carrier layer structure allows type B carriers to pass through the type A carrier layer and increases their mobility when a corresponding voltage is applied to the type A carrier layer. Simultaneously, the type A carrier layer provides unidirectional transport, preventing the backflow of type B carriers and achieving efficient regulation. Furthermore, this embodiment of the invention includes two gate control electrodes, allowing for precise simultaneous control of luminous efficiency and brightness, achieving flexible regulation.

[0063] Step S9: Deposit a second conductive layer on the fourth transport layer, and perform photolithography on the second conductive layer to form a second electrode.

[0064] In this specific embodiment, the change in the current-mode dual-gate controlled light-emitting device in step S9 is as follows: Figure 11 As shown.

[0065] Specifically, when the first gate control electrode applies a corresponding gate voltage, the mobility of type A carriers between the first transport layer and the second transport layer is increased, thereby changing the carrier recombination efficiency of the light-emitting functional layer to adjust the luminous efficiency and / or luminous brightness of the light-emitting device; when the second gate control electrode applies a corresponding gate voltage, the mobility of type B carriers between the third transport layer and the fourth transport layer is increased, thereby changing the carrier recombination efficiency of the light-emitting functional layer to adjust the luminous efficiency and / or luminous brightness of the light-emitting device.

[0066] In this specific embodiment, the thickness of the first control layer is less than that of the first transmission layer and the second transmission layer, and the thickness of the second control layer is less than that of the third transmission layer and the fourth transmission layer.

[0067] In this specific embodiment, when the electron mobility of the light-emitting functional layer is greater than the hole mobility, the first electrode is the cathode, the type A charge carrier is electrons, the second electrode is the anode, and the type B charge carrier is holes, a positive voltage is applied to the first gate control electrode to improve the luminous efficiency of the light-emitting device; a negative voltage is applied to the second gate control electrode to improve the luminous efficiency and luminous brightness of the light-emitting device.

[0068] In this specific embodiment, thin film deposition includes one of spin coating, spray coating, and vapor deposition.

[0069] In this specific embodiment, the photolithography process includes: coating photoresist, exposure, development, and etching.

[0070] The current-mode dual-gate modulated light-emitting device prepared in this embodiment of the invention can increase the mobility of corresponding charge carriers between the same-side transport layers by applying a corresponding gate voltage to the gate control electrode, thereby changing the carrier recombination efficiency of the light-emitting functional layer to adjust the luminous efficiency and / or luminous brightness of the light-emitting device. This embodiment of the invention achieves unidirectional carrier transport while increasing the mobility of corresponding charge carriers through the setting of the control layer, avoiding carrier conduction or electric field shielding caused by carrier backflow, thus achieving efficient control.

[0071] The current-mode dual-gate regulated light-emitting device prepared in this embodiment of the invention has two gate regulation electrodes located at both ends. One end can regulate the luminous efficiency, and the other end can regulate both the luminous efficiency and the luminous brightness simultaneously. By coordinating the gate voltages of the two, the luminous efficiency and luminous brightness can be precisely regulated simultaneously, making the gate regulation more flexible.

[0072] In this embodiment of the invention, the first electrode, the first gate control electrode, and the second gate control electrode are fabricated together, which reduces the number of fabrication steps. Furthermore, the first control layer covers the first transport layer and the first gate control electrode, and the second control layer covers the second transport layer and the first gate control electrode, reducing the need for insulating layers and simplifying the structure. The fabrication process of this embodiment effectively reduces fabrication steps, simplifies the fabrication process, and improves fabrication efficiency.

[0073] In summary, the embodiments of the present invention provide a gate-controlled light-emitting device that can be performed efficiently and flexibly, and its efficient fabrication process.

[0074] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes the element.

[0075] The various embodiments in this specification are described in a related manner. Similar or identical parts between embodiments can be referred to mutually. Each embodiment focuses on describing the differences from other embodiments. In particular, the system embodiments are basically similar to the method embodiments, so the description is relatively simple; relevant parts can be referred to the descriptions of the method embodiments.

[0076] The above are merely preferred embodiments of the present invention and are not intended to limit the scope of protection of the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention are included within the scope of protection of the present invention.

Claims

1. A fabrication process for a current-mode dual-gate modulated unidirectional junction-cutting composite light-emitting device, characterized in that, The process includes: Step S1: Deposit a first conductive layer on the substrate, and perform photolithography on the first conductive layer to form a first electrode, a first gate control electrode, and a second gate control electrode; Step S2: A first type A carrier material layer is deposited on the first electrode by thin film deposition, and the first type A carrier material layer is photolithographically formed to form a first transport layer covering the first electrode; Step S3: A first type B carrier material layer is deposited on the first transport layer and the first gate control electrode by thin film deposition, and the first type B carrier material layer is photolithographically etched to form a first control layer on the first transport layer and the first gate control electrode; wherein, the type A carrier and the type B carrier carry opposite charges; Step S4: A second type A carrier material layer is deposited on the first control layer by thin film deposition, and the second type A carrier material layer is photolithographically etched to form a second transport layer; Step S5: According to the type of light-emitting device, prepare a light-emitting functional layer on the second transport layer; Step S6: Deposit a second type B charge carrier material layer onto the light-emitting functional layer by thin film deposition, and perform photolithography on the second type B charge carrier material layer to form a third transport layer; Step S7: A third type A carrier material layer is deposited on the third transport layer and the second gate control electrode by thin film deposition, and the third type A carrier material layer is photolithographically etched to form a second control layer on the third transport layer and the second gate control electrode; Step S8: A third type B carrier material layer is deposited on the second control layer by thin film deposition, and the third type B carrier material layer is photolithographically formed to form a fourth transport layer; Step S9: Deposit a second conductive layer on the fourth transport layer, and perform photolithography on the second conductive layer to form a second electrode; wherein, when a corresponding gate voltage is applied to the first gate control electrode, the mobility of the type A carriers between the first and second transport layers is increased, thereby changing the carrier recombination efficiency of the light-emitting functional layer to adjust the luminous efficiency and / or luminous brightness of the light-emitting device; when a corresponding gate voltage is applied to the second gate control electrode, the mobility of the type B carriers between the third and fourth transport layers is increased, thereby changing the carrier recombination efficiency of the light-emitting functional layer to adjust the luminous efficiency and / or luminous brightness of the light-emitting device.

2. The fabrication process of the current-mode dual-gate regulated light-emitting device according to claim 1, characterized in that, The thickness of the first control layer is less than that of the first transmission layer and the second transmission layer, and the thickness of the second control layer is less than that of the third transmission layer and the fourth transmission layer.

3. The fabrication process of the current-mode dual-gate regulated light-emitting device according to claim 1, characterized in that, The light-emitting functional layer includes a quantum dot light-emitting layer or an organic light-emitting layer.

4. The fabrication process of the current-mode dual-gate regulated light-emitting device according to claim 1, characterized in that, When the electron mobility of the light-emitting functional layer is greater than the hole mobility, the first electrode is the cathode, the type A charge carrier is electron, the second electrode is the anode, and the type B charge carrier is hole, a positive voltage is applied to the first gate control electrode to improve the luminous efficiency of the light-emitting device; a negative voltage is applied to the second gate control electrode to improve the luminous efficiency and luminous brightness of the light-emitting device.

5. The fabrication process of the current-mode dual-gate regulated light-emitting device according to claim 1, characterized in that, Step S5 includes: Depending on the type of light-emitting device, the process can be divided into single or multiple film layer preparations, with the light-emitting functional layer formed on the second transport layer.

6. The fabrication process of the current-mode dual-gate regulated light-emitting device according to claim 1, characterized in that, The thin film deposition includes one of spin coating, spray coating, and vapor deposition.

7. The fabrication process of the current-mode dual-gate regulated light-emitting device according to claim 1, characterized in that, The photolithography process includes: coating photoresist, exposure, development, and etching.

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