Gas mixture as co-gas for ion implantation

Abstract

The invention relates to an ion implantation tool source and a gas delivery system. The system may include a gas source including one or more gas supply vessels, an ion implanter arc chamber connected to the gas source, and a gallium target housed within the ion implanter arc chamber. The one or more gas supply vessels may supply a gas mixture of hydrogen and fluoride. The hydrogen may be between 5% and 60% in the gas mixture.

Description

Technical Field

[0001] The present disclosure relates to ion implantation. More particularly, the present disclosure relates to using a gas mixture as a companion gas for implantation, such as gallium implantation. Background Art

[0002] Ion implantation is used in the manufacture of semiconductor devices. Summary of the invention

[0003] The present disclosure relates to the use of a gas mixture as a companion gas for an implant (e.g., a gallium implant). In some embodiments, the gas mixture may include the use of boron trifluoride (BF3) / hydrogen (H2) or other fluoride gas and hydrogen mixtures as a companion gas for gallium implantation. In some embodiments, gallium implantation may be performed using a gallium-containing sputtering target, such as gallium nitride (GaN), gallium oxide (Ga2O3), an isotopically enriched analog of gallium nitride (GaN) or gallium oxide (Ga2O3) (the isotopic enrichment of gallium contained therein is higher than the natural abundance of 69Ga or 71Ga), or a combination thereof. A fluoride companion gas is sometimes used to enhance the gallium ion (Ga+) beam. One potential disadvantage of fluoride gases is that fluoride gases can react with arc chambers (e.g., tungsten arc chambers), resulting in tungsten deposition on the arc chamber and electrode regions (e.g., cathodes). In some instances, tungsten deposition can degrade the source state and affect the source life.

[0004] The present disclosure uses boron trifluoride (BF3) and / or hydrogen (H2) or other fluoride gases and hydrogen mixtures as co-gases for gallium-containing sputtering targets (e.g., GaN or Ga2O3). In some embodiments, the hydrogen mixture will help reduce halogen cycles and tungsten deposition, thereby enhancing source life.

[0005] In some aspects, the technology described herein relates to an ion implantation tool source and gas delivery system: a gas source comprising one or more gas supply containers, wherein the one or more gas supply containers are configured to supply a gas mixture comprising hydrogen and fluoride, wherein hydrogen comprises 5% to 60% of the gas mixture; an ion implanter arc chamber connected to the gas source; and a gallium target contained within the ion implanter arc chamber.

[0006] In some aspects, the technology described herein relates to an ion implantation tool source and gas delivery system wherein the gallium target comprises gallium nitride (GaN) or gallium oxide (Ga2O3).

[0007] In some aspects, the technology described herein relates to an ion implantation tool source and gas delivery system, wherein the hydrogen includes hydrogen (H2), phosphine (PH3), AsH3, SiH4, B2H6, CH4, NH3, GeH4, or a combination thereof.

[0008] In some aspects, the technology described herein relates to an ion implantation tool source and gas delivery system, wherein the hydrogen includes hydrogen gas (H2).

[0009] In some aspects, the technology described herein relates to an ion implantation tool source and gas delivery system, wherein the hydrogen is generated by a hydrogen (H2) generator.

[0010] In some aspects, the technology described herein relates to an ion implantation tool source and gas delivery system in which the hydrogen does not come from a gas supply vessel.

[0011] In some aspects, the technology described herein relates to an ion implantation tool source and gas delivery system, wherein the fluoride includes F2 (fluorine), BF3 (boron trifluoride), SiF4 (silicon tetrafluoride), GeF4 (silicon tetrafluoride), PF3 (phosphorus trifluoride), PF5 (phosphorus pentafluoride), XeF2, CF4, CHF3, SF6, NF3, WF6, B2F4, Si2F6 or a combination thereof.

[0012] In some aspects, the technology described herein relates to an ion implantation tool source and gas delivery system wherein the fluoride comprises BF3 (boron trifluoride).

[0013] In some aspects, the technology described herein relates to an ion implantation tool source and gas delivery system, wherein the BF3 (boron trifluoride) is natural BF3 (boron trifluoride).

[0014] In some aspects, the technology described herein relates to an ion implantation tool source and gas delivery system, wherein the BF3 (boron trifluoride) is enriched BF3 (boron trifluoride).

[0015] In some aspects, the technology described herein relates to an ion implantation tool source and gas delivery system wherein the gas mixture consists essentially of BF3 (boron trifluoride) and hydrogen (H2).

[0016] In some aspects, the technology described herein relates to an ion implantation tool source and gas delivery system in which a gas line connects an ion implanter arc chamber with a gas source.

[0017] In some aspects, the technology described herein relates to an ion implantation tool source and gas delivery system in which hydrogen comprises 10% to 40% of the gas mixture.

[0018] In some aspects, the technology described herein relates to an ion implantation tool source and gas delivery system in which hydrogen comprises 15% to 35% of the gas mixture.

[0019] In some aspects, the technology described herein relates to a method of forming gallium ions, the method comprising: supplying a gas mixture from a gas source into an arc chamber of an ion implanter, wherein the gas mixture comprises hydrogen and fluoride, and wherein hydrogen accounts for 5% to 60% of the gas mixture; and contacting the gas mixture with a gallium target contained in the arc chamber of the ion implanter.

[0020] In some aspects, the technology described herein relates to a method in which the gallium target includes gallium nitride (GaN) or gallium oxide (Ga2O3).

[0021] In some aspects, the technology described herein relates to a method, wherein the hydrogen includes hydrogen (H2), phosphine (PH3), AsH3, SiH4, B2H6, CH4, NH3, GeH4, or a combination thereof.

[0022] In some aspects, the technology described herein relates to a method wherein the hydrogen includes hydrogen gas (H2).

[0023] In some aspects, the technology described herein relates to a method wherein the hydrogen is produced by a hydrogen (H2) generator.

[0024] In some aspects, the technology described herein relates to a method wherein the hydrogen does not come from a gas supply vessel.

[0025] In some aspects, the technology described herein relates to a method wherein the fluoride includes F2 (fluorine gas), BF3 (boron trifluoride), SiF4 (silicon tetrafluoride), GeF4 (silicon tetrafluoride), PF3 (phosphorus trifluoride), PF5 (phosphorus pentafluoride), XeF2, CF4, CHF3, SF6, NF3, WF6, B2F4, Si2F6, or a combination thereof.

[0026] In some aspects, the technology described herein relates to a method wherein the fluoride comprises BF3 (boron trifluoride).

[0027] In some aspects, the technology described herein relates to a method wherein the BF3 (boron trifluoride) is natural BF3 (boron trifluoride).

[0028] In some aspects, the technology described herein relates to a method wherein the BF3 (boron trifluoride) is enriched BF3 (boron trifluoride).

[0029] In some aspects, the technology described herein relates to a method wherein the gas mixture consists essentially of BF3 (boron trifluoride) and hydrogen (H2).

[0030] In some aspects, the technology described herein relates to a method in which a gas line connects an ion implanter arc chamber to a gas source.

[0031] In some aspects, the technology described herein relates to a method wherein hydrogen comprises 10% to 40% of the gas mixture.

[0032] In some aspects, the technology described herein relates to a method wherein hydrogen comprises 15% to 35% of the gas mixture. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Some embodiments of the present disclosure are described herein with reference to the accompanying drawings by way of example only. With specific reference now to the accompanying drawings in detail, it is emphasized that the embodiments are shown for the purpose of example and for illustrative discussion of the embodiments of the present disclosure. In this regard, the description in conjunction with the accompanying drawings makes it clear to those skilled in the art how the embodiments of the present disclosure may be implemented.

[0034] Figure 1 Depicts an ion implantation tool source and gas delivery system.

[0035] Figure 2 A flow chart depicting a gallium ion formation method.

[0036] Figure 3 The Ga+ beam is depicted based on the H2 percentage in the BF3 / H2 mixture on the GaN target.

[0037] Figure 4 The tungsten beam is depicted based on the percentage of hydrogen (H2) on the GaN target.

[0038] Figure 5 The Ga+ beam current based on the H2 percentage in the BF3 / H2 mixture on Ga2O3 is depicted.

[0039] Figure 6 Tungsten beam based on the percentage of H2 on the Ga2O3 target is depicted. DETAILED DESCRIPTION

[0040] Among those benefits and improvements disclosed, other objects and advantages of the present disclosure will become apparent from the following description in conjunction with the accompanying drawings. Detailed embodiments of the present disclosure are disclosed herein; however, it should be understood that the disclosed embodiments are merely illustrative of the present disclosure that may be embodied in various forms. In addition, each example given in conjunction with the various embodiments of the present disclosure is intended to be illustrative and not limiting.

[0041] All prior patents and publications mentioned herein are incorporated by reference in their entirety.

[0042] Unless the context clearly dictates otherwise, throughout the specification and claims, the following terms take on the meanings explicitly associated herein. As used herein, the phrases "in one embodiment," "in an embodiment," and "in some embodiments," although they may, do not necessarily, refer to the same embodiment. Additionally, as used herein, the phrases "in another embodiment" and "in some other embodiments," although they may, do not necessarily, refer to different embodiments. It is intended that all embodiments of the present disclosure may be combined without departing from the scope or spirit of the present disclosure.

[0043] Unless the context clearly dictates otherwise, as used herein, the term "based on" is not exclusive and allows for being based on other factors not described. In addition, throughout the specification, the meanings of "a", "an" and "the" include plural references. The meaning of "in..." includes "in..." and "on...".

[0044] As used herein, the term "between" does not necessarily require placement directly adjacent to other elements. Generally speaking, this term means a configuration in which something is sandwiched by two or more other objects. At the same time, the term "between" can describe that something is directly adjacent to two opposing objects. Therefore, in any one or more embodiments disclosed herein, a specific structural component placed between two other structural elements can:

[0045] directly disposed between the two other structural elements so that the specific structural component is in direct contact with both of the two other structural elements;

[0046] being disposed immediately adjacent to only one of the two other structural elements such that the particular structural component is in direct contact with only one of the two other structural elements;

[0047] being disposed indirectly adjacent to only one of the two other structural elements, such that the particular structural component is not in direct contact with only one of the two other structural elements, and there is another element juxtaposed with the particular structural component and one of the two other structural elements;

[0048] indirectly disposed between the two other structural elements, such that the particular structural component is not in direct contact with either of the two other structural elements and other features may be disposed therebetween; or

[0049] Any combination thereof.

[0050] As used herein, "embedded" means that a first material is distributed throughout a second material.

[0051] The present disclosure relates to using a gas mixture as a companion gas for implantation (e.g., gallium implantation). In some embodiments, the gas mixture may include using BF3 / H2 or other fluoride gas and hydrogen mixtures as a companion gas for gallium implantation. In some embodiments, gallium implantation may be performed by using a gallium-containing sputtering target (e.g., GaN or Ga2O3).

[0052] In other embodiments, gallium implantation can be performed by using a gallium-containing sputtering target, which includes but is not limited to gallium fluoride, gallium chloride, gallium bromide, gallium iodide, gallium nitride, gallium oxide, gallium arsenide, gallium phosphide, trimethylgallium Ga(CH3)3, gallium nitrate Ga(NO3)3, gallium hydroxide Ga(OH)3, gallium antimonide GaSb, gallium sulfide, gallium selenide, gallium alkane, gallium hydride CH3, digallane Ga2H6, gallium telluride GaTe, gallium indium phosphide, gallium arsenide phosphide, indium gallium arsenide, aluminum gallium arsenide and / or gallium.

[0053] Fluoride co-companion gases are sometimes used to enhance the gallium ion (Ga+) beam. One potential disadvantage of fluoride gases is that fluoride gases can react with the ion implanter arc chamber (e.g., a tungsten arc chamber), resulting in tungsten deposition on the ion implanter arc chamber and electrode regions (e.g., the cathode). In some instances, tungsten deposition can degrade the source condition and affect source lifetime.

[0054] The present disclosure uses BF3 / H2 or other fluoride gas and hydrogen mixture as a co-gas for gallium-containing sputtering targets (e.g., GaN or Ga2O3). In some embodiments, the hydrogen mixture will help reduce halogen cycles and tungsten deposition, thereby enhancing source life. In some embodiments, depending on the percentage of H2 in the mixture, the reduction in the tungsten ion beam (W+ beam) can be at least 25%, at least 35% in other cases, 45% in other cases and 55% in other cases. The reduction in tungsten ions in the plasma means less tungsten deposition and therefore increased source life. In related and related applications, during the ion implantation process, a certain amount of tungsten ions enter the gas phase and plasma, resulting in greater tungsten deposition or coating inside and / or around the arc chamber. The invention described herein shows that the mixture can reduce deposition and enhance source life at certain concentrations and in the presence of a gallium-containing sputtering target.

[0055] Instead of the fluoride reacting with the ion implanter arc chamber, hydrogen bonds with the fluoride, thereby blocking the reaction of the fluoride with the ion implanter arc chamber. For example, when the ion implanter arc chamber is a tungsten arc chamber, the fluoride blocks the reaction between the fluoride and the tungsten arc chamber, thereby reducing tungsten deposition on the ion implanter arc chamber and electrode regions (e.g., cathodes). In some embodiments, the reduction of tungsten on the ion implanter arc chamber can increase the life of the ion implanter arc chamber and / or reduce the maintenance of the ion implanter arc chamber.

[0056] Figure 1 An ion implantation tool source and gas delivery system 100 is depicted. In some embodiments, the ion implantation tool source and gas delivery system 100 includes a gas source 110, a gas line 120, and an ion implanter arc chamber 130. The ion implanter arc chamber 130 is connected to the gas source 110. In some embodiments, the gas line 120 connects the ion implanter arc chamber 130 to the gas source 110. In some embodiments, a target 140 (e.g., a gallium target) is housed in the ion implanter arc chamber 130.

[0057] In some embodiments, the target 140 is a gallium target and includes gallium nitride (GaN), gallium oxide (Ga2O3), GaCl3, GaF3, or Ga x Z y , where x and y can be the numbers 1, 2, 3, 4, 5, or 6. "Z" represents any element.

[0058] In some embodiments, the gas source 110 includes one or more gas supply containers. In some embodiments, the gas source 110 supplies gas at a pressure below atmospheric pressure. In some embodiments, the one or more gas supply containers are configured to supply a gas mixture comprising hydrogen and fluoride. In some embodiments, hydrogen accounts for 5% to 60% of the gas mixture. In some embodiments, hydrogen accounts for 10% to 40% of the gas mixture. In some embodiments, hydrogen accounts for 15% to 35% of the gas mixture. In some embodiments, the gas mixture comprises 5% to 60%, 5% to 55%, 5% to 50%, 5% to 45%, 5% to 40%, 5% to 35%, 5% to 30%, 5% to 25%, 5% to 20%, 5% to 15%, 5% to 10%, 10% to 60%, 15% to 60%, 20% to 60%, 25% to 60%, 30% to 60%, 35% to 60%, 40% to 60%, 45% to 60%, 50% to 60%, or any range or sub-range therebetween. In other embodiments, the hydrogen in the mixture may range from 13% to 60%, 13% to 50%, 13% to 35%, 13% to 33%, 33% to 60%, 33% to 50%, 33% to 35%, or any range or sub-range therebetween.

[0059] In some embodiments, one or more gas supply containers may include one or more gas cylinders. In some embodiments, the gas mixture of the present disclosure may be premixed in the same gas cylinder. The gas mixture of the present disclosure may also flow from different gas cylinders. The gas mixture of the present disclosure may also be a combination of a premixed gas cylinder and other gas cylinders and flow with other gas cylinders. For example, in some embodiments, BF3 may be premixed with H2 in one gas cylinder. In some embodiments, hydrogen does not come from a gas supply container. In some embodiments, hydrogen is produced by a hydrogen (H2) generator. In some embodiments, BF3 may flow with H2 in an independent H2 gas cylinder or an H2 generator.

[0060] In some embodiments, the hydrogen in the gas mixture includes hydrogen (H2), phosphine (PH3), AsH3, SiH4, B2H6, CH4, NH3, GeH4, or a combination thereof. For example, the hydrogen in the mixed gas may include hydrogen (H2). For example, the hydrogen in the mixed gas includes hydrogen (H2), phosphine (PH3), and AsH3.

[0061] In some aspects, the fluoride in the gas mixture includes F2 (fluorine gas), BF3 (boron trifluoride), SiF4 (silicon tetrafluoride), GeF4 (silicon tetrafluoride), PF3 (phosphorus trifluoride), PF5 (phosphorus pentafluoride), XeF2, CF4, CHF3, SF6, NF3, WF6, B2F4, Si2F6, or a combination thereof. For example, the fluoride in the gas mixture includes BF3 (boron trifluoride). For example, the fluoride in the gas mixture includes F2 (fluorine gas), BF3 (boron trifluoride), SiF4 (silicon tetrafluoride).

[0062] The gas mixture may include any combination of hydrogen described in the present disclosure and a fluoride described in the present disclosure. For example, in some embodiments, the gas mixture may include SiH4, B2H6, NF3, and WF6. In some embodiments, the gas mixture comprises, consists essentially of, or consists of: BF3 (boron trifluoride) and hydrogen (H2).

[0063] In some embodiments, the BF3 (boron trifluoride) is natural BF3 (boron trifluoride). In some embodiments, the BF3 (boron trifluoride) is enriched BF3 (boron trifluoride).

[0064] Figure 2A flow chart of a gallium ion formation method 200 is depicted. In some embodiments, the method 200 includes supplying 210 a gas mixture from a gas source to an ion implanter arc chamber. In some embodiments, the method 200 further includes contacting 220 the gas mixture with a gallium target contained within the ion implanter arc chamber. The gas mixture, gas source, ion implanter arc chamber, target (e.g., gallium target) can be any of the embodiments described herein.

[0065] Figure 3 The stability of the Ga+ beam current in the range of 0 to 50% is depicted when BF3 / H2 is flowed toward a GaN target.

[0066] Figure 4 It shows that the W+ beam decreases relative to the percentage of hydrogen in the mixture. As expected, the tungsten beam drops rapidly from 0 to 33%, and after the percentage of hydrogen in the mixture reaches 33%, the tungsten beam begins to level off.

[0067] Figure 5 The stability of the Ga+ beam current in the range of 0 to 50% is depicted when BF3 / H2 is flowed toward the Ga2O3 target.

[0068] Figure 6 The W+ beam decreases relative to the percentage of hydrogen in the mixture. As expected, the tungsten ion beam decreases rapidly from 0 to 33%, and after the percentage of hydrogen in the mixture reaches 33%, the tungsten ion beam begins to level off. Figure 6 As shown, the tungsten ion beam drops by about 46% in the plasma from 0% H2 to 33% H2. Therefore, this reduction is associated with an extended gas source life.

[0069] aspect

[0070] Various aspects are described below. It should be appreciated that any one or more features recited in the following aspects may be combined with any one or more other aspects.

[0071] Aspect 1. An ion implantation tool source and gas delivery system: a gas source comprising one or more gas supply containers, wherein the one or more gas supply containers are configured to supply a gas mixture comprising hydrogen and fluoride, wherein hydrogen accounts for 5% to 60% of the gas mixture; an ion implantation machine arc chamber connected to the gas source; and a gallium target contained in the ion implantation machine arc chamber.

[0072] Aspect 2. The ion implantation tool source and gas delivery system of aspect 1, wherein the gallium target comprises gallium nitride (GaN) or gallium oxide (Ga2O3).

[0073] Aspect 3. An ion implantation tool source and gas delivery system according to Aspect 1 or Aspect 2, wherein the hydrogen comprises hydrogen (H2), phosphine (PH3), AsH3, SiH4, B2H6, CH4, NH3, GeH4 or a combination thereof.

[0074] Aspect 4. An ion implantation tool source and gas delivery system according to any of the preceding aspects, wherein the hydrogen comprises hydrogen gas (H2).

[0075] Aspect 5. An ion implantation tool source and gas delivery system according to any of the preceding aspects, wherein the hydrogen is generated by a hydrogen (H2) generator.

[0076] Aspect 6. The ion implantation tool source and gas delivery system of any of the preceding aspects, wherein the hydrogen does not come from a gas supply container.

[0077] Aspect 7. An ion implantation tool source and gas delivery system according to any of the preceding aspects, wherein the fluoride comprises F2 (fluorine gas), BF3 (boron trifluoride), SiF4 (silicon tetrafluoride), GeF4 (silicon tetrafluoride), PF3 (phosphorus trifluoride), PF5 (phosphorus pentafluoride), XeF2, CF4, CHF3, SF6, NF3, WF6, B2F4, Si2F6 or a combination thereof.

[0078] Aspect 8. The ion implantation tool source and gas delivery system according to any of the preceding aspects 1, wherein the fluoride comprises BF3 (boron trifluoride).

[0079] Aspect 9. The ion implantation tool source and gas delivery system according to Aspect 8, wherein the BF3 (boron trifluoride) is natural BF3 (boron trifluoride).

[0080] Aspect 10. The ion implantation tool source and gas delivery system according to aspect 8, wherein the BF3 (boron trifluoride) is enriched BF3 (boron trifluoride).

[0081] Aspect 11. An ion implantation tool source and gas delivery system according to any of the preceding aspects, wherein the gas mixture consists mainly of BF3 (boron trifluoride) and hydrogen (H2).

[0082] Aspect 12. The ion implantation tool source and gas delivery system according to any of the preceding aspects, wherein a gas pipeline connects the ion implanter arc chamber with the gas source.

[0083] Aspect 13. The ion implantation tool source and gas delivery system of any of the preceding aspects, wherein hydrogen comprises 10% to 40% of the gas mixture.

[0084] Aspect 14. An ion implantation tool source and gas delivery system according to Technical Solution 1, wherein hydrogen accounts for 15% to 35% of the gas mixture.

[0085] Aspect 15. A method for forming gallium ions, the method comprising: supplying a gas mixture from a gas source to an arc chamber of an ion implanter, wherein the gas mixture comprises hydrogen and fluoride, and wherein hydrogen accounts for 5% to 60% of the gas mixture; and contacting the gas mixture with a gallium target contained in the arc chamber of the ion implanter.

[0086] Aspect 16. The method according to aspect 15, wherein the gallium target comprises gallium nitride (GaN) or gallium oxide (Ga2O3).

[0087] Aspect 17. A method according to aspect 15 or aspect 16, wherein the hydrogen comprises hydrogen (H2), phosphine (PH3), AsH3, SiH4, B2H6, CH4, NH3, GeH4 or a combination thereof.

[0088] Aspect 18. The method according to any of the preceding aspects, wherein the hydrogen comprises hydrogen gas (H2).

[0089] Aspect 19. The method according to any of the preceding aspects, wherein the hydrogen is produced by a hydrogen (H2) generator.

[0090] Aspect 20. The method according to any of the preceding aspects, wherein the hydrogen does not come from a gas supply container.

[0091] Aspect 21. A method according to any of the preceding aspects, wherein the fluoride comprises F2 (fluorine gas), BF3 (boron trifluoride), SiF4 (silicon tetrafluoride), GeF4 (silicon tetrafluoride), PF3 (phosphorus trifluoride) or PF5 (phosphorus pentafluoride), XeF2, CF4, CHF3, SF6, NF3, WF6, B2F4, Si2F6 or a combination thereof.

[0092] Aspect 22. The method according to any of the preceding aspects, wherein the fluoride comprises BF3 (boron trifluoride).

[0093] Aspect 23. The method according to aspect 22, wherein the BF3 (boron trifluoride) is natural BF3 (boron trifluoride).

[0094] Aspect 24. The method according to aspect 22, wherein the BF3 (boron trifluoride) is enriched BF3 (boron trifluoride).

[0095] Aspect 25. The method according to any of the preceding aspects, wherein the gas mixture consists mainly of BF3 (boron trifluoride) and hydrogen (H2).

[0096] Aspect 26. The method according to any of the preceding aspects, wherein a gas pipeline connects the ion implanter arc chamber with the gas source.

[0097] Aspect 27. The method according to any of the preceding aspects, wherein hydrogen comprises 10% to 40% of the gas mixture.

[0098] Aspect 28. The method according to any of the preceding aspects, wherein hydrogen comprises 15% to 35% of the gas mixture.

[0099] Aspect 29. A method according to any of the preceding aspects, wherein the gallium target comprises at least one of the following: gallium fluoride, gallium chloride, gallium bromide, gallium iodide, gallium nitride, gallium oxide, gallium arsenide, gallium phosphide, trimethylgallium Ga(CH3)3, gallium nitrate Ga(NO3)3, gallium hydroxide Ga(OH)3, gallium antimonide GaSb, gallium sulfide, gallium selenide, gallium alkane, gallium hydride CH3, digallane Ga2H6, gallium telluride GaTe, gallium indium phosphide, gallium arsenic phosphide, indium gallium arsenide, aluminum gallium arsenide and / or gallium.

[0100] It should be understood that changes may be made in detail, especially in matters of construction materials employed and shape, size and arrangement of parts without departing from the scope of the present disclosure. This specification and described embodiments are examples, with the true scope and spirit of the disclosure being indicated by the following claims.

Claims

1. An ion implantation tool source and gas delivery system: a gas source comprising one or more gas supply containers, wherein the one or more gas supply vessels are configured to supply a gas mixture comprising hydrogen and a fluoride, wherein hydrogen comprises 5% to 60% of the gas mixture; an ion implanter arc chamber connected to the gas source; and A gallium target is housed in an arc chamber of the ion implanter.

2. The ion implantation tool source and gas delivery system of claim 1, wherein the gallium target comprises gallium nitride (GaN) or gallium oxide (Ga2O3).

3. The ion implantation tool source and gas delivery system of claim 1 , wherein the gallium target comprises at least one of gallium fluoride, gallium chloride, gallium bromide, gallium iodide, gallium nitride, gallium oxide, gallium arsenide, gallium phosphide, trimethylgallium Ga(CH3)3, gallium nitrate Ga(NO3)3, gallium hydroxide Ga(OH)3, gallium antimonide GaSb, gallium sulfide, gallium selenide, gallium alkane, gallium hydride CH3, digallane Ga2H6, gallium telluride GaTe, gallium indium phosphide, gallium arsenide phosphide, indium gallium arsenide, aluminum gallium arsenide and / or gallium.

4. The ion implantation tool source and gas delivery system of claim 1, wherein the hydrogen comprises hydrogen (H2), phosphine (PH3), AsH3, SiH4, B2H6, CH4, NH3, GeH4, or a combination thereof.

5. The ion implantation tool source and gas delivery system of claim 1, wherein the hydrogen comprises hydrogen gas (H2).

6. An ion implantation tool source and gas delivery system according to claim 1, wherein the fluoride comprises F2 (fluorine), BF3 (boron trifluoride), SiF4 (silicon tetrafluoride), GeF4 (silicon tetrafluoride), PF3 (phosphorus trifluoride), PF5 (phosphorus pentafluoride), XeF2, CF4, CHF3, SF6, NF3, WF6, B2F4, Si2F6 or a combination thereof.

7. The ion implantation tool source and gas delivery system of claim 1, wherein the fluoride comprises BF3 (boron trifluoride) or enriched BF3 (boron trifluoride).

8. The ion implantation tool source and gas delivery system of claim 1, wherein the gas mixture consists essentially of BF3 (boron trifluoride) and hydrogen (H2).

9. The ion implantation tool source and gas delivery system of claim 1 wherein hydrogen comprises 10% to 40% of the gas mixture.

10. The ion implantation tool source and gas delivery system of claim 1 wherein hydrogen comprises 15% to 35% of the gas mixture.

11. A method for forming gallium ions, the method comprising: The gas mixture is supplied from the gas source to the arc chamber of the ion implanter. wherein the gas mixture comprises hydrogen and a fluoride, and wherein hydrogen comprises 5% to 60% of the gas mixture; and The gas mixture is brought into contact with a gallium target housed within an arc chamber of the ion implanter.

12. The method of claim 11, wherein the gallium target comprises gallium nitride (GaN) or gallium oxide (Ga2O3).

13. The method of claim 11, wherein the gallium target comprises at least one of gallium fluoride, gallium chloride, gallium bromide, gallium iodide, gallium nitride, gallium oxide, gallium arsenide, gallium phosphide, trimethylgallium Ga(CH3)3, gallium nitrate Ga(NO3)3, gallium hydroxide Ga(OH)3, gallium antimonide GaSb, gallium sulfide, gallium selenide, gallium alkane, gallium hydride CH3, digallane Ga2H6, gallium telluride GaTe, gallium indium phosphide, gallium arsenide phosphide, indium gallium arsenide, aluminum gallium arsenide and / or gallium.

14. The method of claim 11, wherein the hydrogen comprises hydrogen (H2), phosphine (PH3), AsH3, SiH4, B2H6, CH4, NH3, GeH4, or a combination thereof.

15. The method of claim 11, wherein the hydrogen comprises hydrogen gas (H2).

16. The method of claim 11, wherein the fluoride comprises F2 (fluorine gas), BF3 (boron trifluoride), SiF4 (silicon tetrafluoride), GeF4 (silicon tetrafluoride), PF3 (phosphorus trifluoride) or PF5 (phosphorus pentafluoride), XeF2, CF4, CHF3, SF6, NF3, WF6, B2F4, Si2F6 or a combination thereof.

17. The method according to claim 16, wherein the BF3 (boron trifluoride) is natural BF3 (boron trifluoride).

18. The method of claim 11, wherein the gas mixture consists essentially of BF3 (boron trifluoride) and hydrogen (H2).

19. The method of claim 11, wherein hydrogen comprises 10% to 40% of the gas mixture.

20. The method of claim 11, wherein hydrogen comprises 15% to 35% of the gas mixture.

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