High-energy high-frequency composite parallel processing device and method based on femtosecond laser

Abstract

The invention provides a high-energy and high-frequency composite parallel processing device and method based on femtosecond laser, and belongs to the technical field of femtosecond laser, and the device comprises a high-power and high-energy femtosecond laser assembly which is used for emitting a first laser beam with high power and high pulse energy; the high-power and high-frequency femtosecond laser assembly is used for emitting a second laser beam with high power and high pulse frequency; and the adjusting assembly is used for loading a workpiece which can be processed by the first laser beam and the second laser beam and can move relative to the high-power and high-energy femtosecond laser assembly and the high-power and high-frequency femtosecond laser assembly. The method has the beneficial effects that the high-power and high-energy femtosecond laser assembly and the high-power and high-frequency femtosecond laser assembly can be subjected to composite parallel processing, so that the processing efficiency is improved, and a heat affected zone generated by independently using the high-power and high-energy femtosecond laser assembly is eliminated; and the problem of processing taper caused by independently using a high-power high-frequency femtosecond laser assembly is solved.

Description

Technical Field

[0001] The present invention belongs to the technical field of femtosecond laser processing, and relates to a high-energy, high-frequency, composite parallel processing device and method based on femtosecond laser. Background Art

[0002] Femtosecond laser (laser pulse width is usually 10 -15 s level), the pulse duration is much shorter than the thermal relaxation time, which avoids overheating, cracking, oxidation, melting and other phenomena caused by heat accumulation in conventional long-pulse laser processing. Due to its good processing quality and high processing precision, it is widely used in the micro-nano field, but its processing efficiency needs to be further improved.

[0003] By increasing the average power (≥300W) and peak power (≥10 8 W) and repetition rate (≥1MHz), it is expected to significantly improve the material removal rate and achieve efficient and precise cold processing of difficult-to-process materials. However, excessive laser energy density input and long-term irradiation of materials will lead to severe plasma shielding clouds, affecting the material's continued absorption of materials and material removal; in addition, the high temperature of the plasma shielding cloud will cause heat accumulation and lead to uncontrollable thermal damage. When plasma clusters and dust cannot be discharged in time, excessive energy input will also cause plasma clusters to burn and dust to oxidize during processing, resulting in a large oxide layer on the processing surface, affecting processing efficiency and processing quality.

[0004] The polygonal scanning galvanometer can achieve ultra-high-speed switching of the laser spot position through the high-speed rotation of the polygonal prism (fast axis scanning speed ≥ 100m / s), avoiding heat accumulation and improving processing efficiency. However, the structure and working principle of the polygonal scanning galvanometer determine that the polygonal scanning galvanometer can only scan line by line in one direction, and it is impossible to quickly adjust the focus position of the spot in the Z-axis direction during the scanning process, resulting in a taper that is difficult to eliminate when processing deep features, affecting the processing accuracy.

[0005] In summary, high-power and high-energy femtosecond laser processing is prone to produce a large heat-affected zone, plasma combustion and powder oxidation, resulting in a large oxide layer on the surface, which affects the processing accuracy and quality; high-power and high-frequency femtosecond laser combined with ultra-high-speed scanning processing is prone to processing taper. Both of these existing processing methods have certain defects and have a lot of room for improvement. Summary of the invention

[0006] The purpose of the present invention is to address the above-mentioned problems existing in the prior art and to propose a high-energy and high-frequency composite parallel processing device and method based on femtosecond laser.

[0007] The purpose of the present invention can be achieved by the following technical solutions: A high-energy and high-frequency composite parallel processing device based on femtosecond laser, comprising:

[0008] A high-power and high-energy femtosecond laser assembly, which is used to emit a first laser beam with high power and high pulse energy;

[0009] A high-power and high-frequency femtosecond laser assembly, which is used to emit a second laser beam with high power and high pulse frequency;

[0010] The adjusting component is used for loading a workpiece which can be processed by the first laser beam and the second laser beam and can move relative to the high-power high-energy femtosecond laser component and the high-power high-frequency femtosecond laser component.

[0011] In the above-mentioned high-energy, high-frequency, composite parallel processing device based on femtosecond laser, the high-power and high-energy femtosecond laser assembly includes a high-power and high-energy femtosecond laser, a first beam collimation module, a dynamic Z-axis focusing mirror, a focusing mirror, a 3D scanning galvanometer, a first field mirror and a first Z-axis slide table which are arranged in sequence. The high-power and high-energy femtosecond laser is used to generate a first laser beam, the first beam collimation module is used to collimate, expand, switch and adjust the first laser beam, the dynamic Z-axis focusing mirror is used to adjust the focal position of the first laser beam, the focusing mirror is used to focus the first laser beam, the 3D scanning galvanometer is used to move the first laser beam in the horizontal direction, the first field mirror is used to focus the first laser beam, and the first Z-axis slide table is used to drive the 3D scanning galvanometer and the first field mirror to move in the vertical direction.

[0012] In the above-mentioned high-energy, high-frequency, composite parallel processing device based on femtosecond laser, the high-power and high-frequency femtosecond laser assembly includes a high-power and high-frequency femtosecond laser, a second beam collimation module, an ultra-high-speed scanning galvanometer, a second field mirror and a second Z-axis slide arranged in sequence, the high-power and high-frequency femtosecond laser is used to emit a second laser beam, the second beam collimation module is used to collimate, expand, switch, and adjust the second laser beam emitted by the high-power and high-frequency femtosecond laser, the ultra-high-speed scanning galvanometer is used to move the second laser beam along the fast axis and the slow axis, the second field mirror is used to focus the second laser beam, and the second Z-axis slide is used to drive the ultra-high-speed scanning galvanometer assembly and the second field mirror to move in the vertical direction.

[0013] In the above-mentioned high-energy and high-frequency composite parallel processing device based on femtosecond laser, the ultra-high-speed scanning galvanometer includes a polygonal prism, and the polygonal prism is used to rotate at an ultra-high speed to reflect the second laser beam to move along the fast axis direction.

[0014] In the above-mentioned high-energy, high-frequency, composite parallel processing device based on femtosecond laser, the adjustment component includes a rotating table, which is used to load workpieces that can be processed by the first laser beam and the second laser beam and can rotate relative to the high-power, high-energy femtosecond laser component and the high-power, high-frequency femtosecond laser component.

[0015] In the above-mentioned high-energy, high-frequency, composite parallel processing device based on femtosecond laser, the adjustment component also includes an X-axis slide, the rotating table is connected to the X-axis slide, and the X-axis slide can drive the rotating table to move along the X-axis.

[0016] In the above-mentioned high-energy, high-frequency, composite parallel processing device based on femtosecond laser, the adjustment component also includes a Y-axis slide, the X-axis slide is connected to the Y-axis slide, and the Y-axis slide can drive the X-axis slide to move along the Y-axis.

[0017] A high-energy and high-frequency composite parallel processing method based on femtosecond laser is also provided, comprising the steps of:

[0018] S1: Use high power and high energy femtosecond laser components to perform single-layer processing to form the characteristic prototype of a single layer of the workpiece;

[0019] S2: Use a high-power and high-frequency femtosecond laser component to perform single-layer processing using low-power and high-frequency to form the characteristic contour of a single layer of the workpiece;

[0020] S3: Repeat steps S1 and S2 until the processing depth reaches the target depth. Before performing step S2 for the second time and after the second time, lower the high-power high-frequency femtosecond laser assembly by one layer so that the processed layer is at the focal position.

[0021] In the above-mentioned high-energy, high-frequency, composite parallel processing method based on femtosecond laser, in step S3, while single-layer processing of the lower layer of the adjacent upper and lower layers is performed by a high-power, high-energy femtosecond laser component using high power and high energy, the upper layer of the adjacent upper and lower layers can be processed by a high-power, high-frequency femtosecond laser component using low power and high frequency at the same time.

[0022] A high-energy and high-frequency composite parallel processing method based on femtosecond laser is also provided, comprising the steps of:

[0023] S1: Use high-power and high-frequency femtosecond laser components to perform single-layer processing at high power and high frequency to form the characteristic prototype of a single layer of the workpiece;

[0024] S2: Repeat step S1 until the processing depth reaches the target depth, and before performing step S1 for the second time and after the second time, lower the high-power high-frequency femtosecond laser assembly by one layer so that the processed layer is at the focal position;

[0025] S3: Low-power and high-energy processing is performed through high-power and high-energy femtosecond laser components to form the overall characteristic contour of the workpiece.

[0026] Compared with the prior art, the present invention has the following beneficial effects:

[0027] 1. High-power and high-energy femtosecond laser components can be used in parallel with high-power and high-frequency femtosecond laser components to improve processing efficiency, eliminate the heat-affected zone caused by using high-power and high-energy femtosecond laser components alone, and eliminate the processing taper problem caused by using high-power and high-frequency femtosecond laser components alone.

[0028] 2. High-power and high-energy femtosecond lasers are used to improve processing efficiency and cannot be replaced by other lasers; high-power and high-frequency femtosecond lasers are used to reduce the heat-affected zone and cannot be replaced by other lasers; 3D scanning galvanometers are used to ensure processing efficiency and eliminate taper at the same time and cannot be replaced by other galvanometers; ultra-high-speed scanning galvanometers are used to improve processing efficiency and reduce the heat-affected zone and cannot be replaced by other galvanometers.

[0029] 3. First, use high-power and high-energy femtosecond laser components to use high-power and high-energy processing to ensure processing efficiency, but it will produce a certain heat-affected zone, and then use high-power and high-frequency femtosecond laser components to use low-power and high-frequency processing to remove the heat-affected zone to ensure processing quality, accuracy and efficiency. At the same time, the high-power and high-frequency femtosecond laser components are lowered by one layer for processing for the second time and after the second time to ensure the focus position and ensure processing accuracy.

[0030] 4. When a high-power and high-energy femtosecond laser component is used to perform single-layer processing on the lower layer of the two adjacent upper and lower layers, a high-power and high-frequency femtosecond laser component can be used to perform single-layer processing on the upper layer of the two adjacent upper and lower layers at the same time using low power and high frequency. The high-power and high-energy femtosecond laser component and the high-power and high-frequency femtosecond laser component are used in parallel to ensure processing efficiency.

[0031] 5. Firstly, high-power and high-frequency femtosecond laser processing is used to ensure processing efficiency and a sufficiently small heat-affected zone to prevent the generation of plasma shielding clouds. Then, high-power and high-energy femtosecond laser components are used to eliminate taper using low power and high energy to ensure processing quality and precision. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 It is a schematic structural diagram of the high-energy and high-frequency composite parallel processing device based on femtosecond laser of the present invention.

[0033] Figure 2 This is a working principle diagram of a high-energy, high-frequency, composite parallel processing device based on femtosecond laser of the present invention.

[0034] Figure 3 This is a working principle diagram of another high-energy and high-frequency composite parallel processing device based on femtosecond laser of the present invention.

[0035] In the figure, 1. high-power and high-energy femtosecond laser; 2. first beam collimation module; 3. first reflector; 4. dynamic Z-axis focusing mirror; 5. focusing mirror; 6. 3D scanning galvanometer; 7. first Z-axis slide; 8. first field mirror; 9. high-power and high-frequency femtosecond laser; 10. second beam collimation module; 11. second reflector; 12. ultra-high-speed scanning galvanometer; 13. polygonal prism; 14. second field mirror; 15. second Z-axis slide; 16. workpiece; 17. rotating table; 18. X-axis slide; 19. Y-axis slide. DETAILED DESCRIPTION

[0036] The following are specific embodiments of the present invention and the accompanying drawings to further describe the technical solution of the present invention, but the present invention is not limited to these embodiments.

[0037] It should be noted that all directional indications in the embodiments of the present invention (such as up, down, left, right, front, back, etc.) are only used to explain the relative position relationship, movement status, etc. between the components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.

[0038] In addition, in the present invention, descriptions such as "first", "second", "one", etc. are only used for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0039] In the present invention, unless otherwise clearly specified and limited, the terms "connection", "fixation", etc. should be understood in a broad sense. For example, "fixation" can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0040] In addition, the technical solutions between the various embodiments of the present invention can be combined with each other, but it must be based on the fact that ordinary technicians in the field can implement it. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0041] The specific embodiments described herein are merely examples of the spirit of the present invention. Those skilled in the art may make various modifications or additions to the specific embodiments described or replace them in similar ways, but they will not deviate from the spirit of the present invention or exceed the scope defined by the appended claims.

[0042] like Figure 1 As shown, a high-energy, high-frequency, composite parallel processing device based on femtosecond laser includes: a high-power, high-energy femtosecond laser component, a high-power, high-frequency femtosecond laser component and an adjustment component.

[0043] The high-power and high-energy femtosecond laser assembly is used to emit a first laser beam with high power and high pulse energy.

[0044] The high-power and high-frequency femtosecond laser assembly is used to emit a second laser beam with high power and high pulse frequency.

[0045] The adjusting component is used to load the workpiece 16 which can be processed by the first laser beam and the second laser beam and can move relative to the high-power high-energy femtosecond laser component and the high-power high-frequency femtosecond laser component.

[0046] Specifically, a high-power, high-energy femtosecond laser component can be used first to perform high-power, high-energy processing to ensure processing efficiency, and then a high-power, high-frequency femtosecond laser component can be used to perform low-power, high-frequency processing to remove the heat-affected zone to ensure processing quality, precision and efficiency; or a high-power, high-frequency femtosecond laser component can be used first to perform processing to ensure processing efficiency and a sufficiently small heat-affected zone, and then a high-power, high-energy femtosecond laser component can be used to perform low-power, high-energy processing to eliminate taper to ensure processing quality and precision.

[0047] In this embodiment, a high-power high-energy femtosecond laser component and a high-power high-frequency femtosecond laser component can be used for composite and parallel processing, thereby improving processing efficiency, eliminating the heat-affected zone generated by using a high-power high-energy femtosecond laser component alone, and eliminating the processing taper problem caused by using a high-power high-frequency femtosecond laser component alone.

[0048] like Figure 1As shown, on the basis of the above-mentioned implementation mode, the high-power and high-energy femtosecond laser assembly includes a high-power and high-energy femtosecond laser 1, a first beam collimation module 2, a dynamic Z-axis focusing mirror 4, a focusing mirror 5, a 3D scanning galvanometer 6, a first field mirror 8 and a first Z-axis slide 7 which are arranged in sequence, the high-power and high-energy femtosecond laser 1 is used to generate a first laser beam, the first beam collimation module 2 is used to collimate, expand, switch, and adjust the first laser beam, the dynamic Z-axis focusing mirror 4 is used to adjust the focal position of the first laser beam, the focusing mirror 5 is used to focus the first laser beam, the 3D scanning galvanometer 6 is used to move the first laser beam in the horizontal direction, the first field mirror 8 is used to focus the first laser beam, and the first Z-axis slide 7 is used to drive the 3D scanning galvanometer 6 and the first field mirror 8 to move in the vertical direction.

[0049] Specifically, it also includes a first movable reflector 3 , which is located between the first beam collimation module 2 and the dynamic Z-axis focusing mirror 4 , and is used to adjust and reflect the first laser beam passing through the first beam collimation module 2 to the dynamic Z-axis focusing mirror 4 .

[0050] It should be noted here that the high-power and high-energy femtosecond laser 1 is used to improve processing efficiency and cannot be replaced by other lasers.

[0051] It should also be noted here that the 3D scanning galvanometer 6 is used to ensure processing efficiency and eliminate taper, and cannot be replaced by other galvanometers.

[0052] In this embodiment, a high-power and high-energy femtosecond laser 1 emits a first laser beam, which passes through a first beam collimation module 2 and is reflected by a first movable reflector 3, and is then emitted in sequence through a dynamic Z-axis focusing mirror 4, a focusing mirror 5, a 3D scanning galvanometer 6 and a first field mirror 8.

[0053] like Figure 1 As shown, on the basis of the above-mentioned embodiment, the high-power and high-frequency femtosecond laser assembly includes a high-power and high-frequency femtosecond laser 9, a second beam collimation module 10, an ultra-high-speed scanning galvanometer 12, a second Z-axis slide 15 and a second field mirror 14 which are arranged in sequence, the high-power and high-frequency femtosecond laser 9 is used to emit a second laser beam, the second beam collimation module 10 is used to collimate, expand, switch, and adjust the second laser beam emitted by the high-power and high-frequency femtosecond laser 9, the ultra-high-speed scanning galvanometer 12 is used to move the second laser beam along the fast axis and the slow axis, the second Z-axis slide 15 is used to drive the ultra-high-speed scanning galvanometer 12 assembly to move in the vertical direction, and the second field mirror 14 is used to focus the second laser beam.

[0054] Specifically, it also includes a second movable reflector 11 , which is located between the second beam collimation module 10 and the ultra-high-speed scanning galvanometer 12 , and is used to adjust and refract the second laser beam passing through the second beam collimation module 10 to the ultra-high-speed scanning galvanometer 12 .

[0055] It should be noted here that the high-power and high-frequency femtosecond laser 9 is used to reduce the heat-affected zone and cannot be replaced by other lasers.

[0056] It should also be noted that the ultra-high-speed scanning galvanometer 12 is used to improve processing efficiency and reduce the heat-affected zone, and cannot be replaced by other galvanometers.

[0057] Specifically, the ultra-high-speed scanning galvanometer 12 includes a polygonal prism 13 , and the polygonal prism 13 is used to rotate at an ultra-high speed so as to reflect the second laser beam to move along the fast axis direction.

[0058] In this embodiment, the high-power high-frequency femtosecond laser 9 emits a second laser beam, which passes through the second beam collimation module 10 , is reflected by the second movable reflector 11 and the ultra-high-speed scanning galvanometer 12 , and is emitted through the second field mirror 14 .

[0059] like Figure 1 As shown, based on the above embodiment, the adjustment component includes a rotating table 17, which is used to load a workpiece 16 that can be processed by the first laser beam and the second laser beam and can rotate relative to the high-power high-energy femtosecond laser component and the high-power high-frequency femtosecond laser component.

[0060] In this embodiment, the rotating table 17 is used to load the workpiece 16 that can be processed by the first laser beam and the second laser beam and can rotate relative to the high-power high-energy femtosecond laser assembly and the high-power high-frequency femtosecond laser assembly to switch the angle of the workpiece 16 to be processed.

[0061] like Figure 1 As shown, based on the above embodiment, the adjustment component further includes an X-axis slide 18, the rotating table 17 is connected to the X-axis slide 18, and the X-axis slide 18 can drive the rotating table 17 to move along the X-axis.

[0062] In this embodiment, the X-axis slide 18 can drive the rotating table 17 to move along the X-axis direction, thereby driving the workpiece 16 to move along the X-axis direction to switch the position of the workpiece 16 to be processed.

[0063] like Figure 1 As shown, based on the above embodiment, the adjustment component also includes a Y-axis slide 19, the X-axis slide 18 is connected to the Y-axis slide 19, and the Y-axis slide 19 can drive the X-axis slide 18 to move along the Y-axis.

[0064] In this embodiment, the Y-axis slide 19 can drive the X-axis slide 18 to move along the Y-axis direction, thereby driving the workpiece 16 to move along the Y-axis direction to switch the position of the workpiece 16 to be processed.

[0065] It is worth explaining here that for high-power and high-energy femtosecond laser components, excessive laser energy density input and long-term irradiation of materials will lead to severe plasma shielding clouds, affecting the material's continued absorption of materials and material removal; in addition, the high temperature of the plasma shielding cloud will cause heat accumulation, leading to uncontrollable thermal damage. When plasma clusters and dust cannot be discharged in time, excessive energy input will also cause the plasma clusters to burn and the dust to oxidize during processing, forming a large oxide layer on the processing surface, affecting the processing efficiency and quality.

[0066] It is also worth explaining here that, for high-power and high-frequency femtosecond laser components, the polygonal scanning galvanometer can achieve ultra-high-speed switching of the laser spot position through the high-speed rotation of the polygonal prism 13. However, the structure and working principle of the polygonal scanning galvanometer determine that the polygonal scanning galvanometer can only scan in a single direction line by line, and the focus position of the spot cannot be quickly adjusted in the Z-axis direction during the scanning process, resulting in a taper that is difficult to eliminate when processing deep features, affecting the processing accuracy.

[0067] like Figure 1 , Figure 2 As shown, a high-energy and high-frequency composite parallel processing method based on femtosecond laser includes the following steps:

[0068] S1: A high-power and high-energy femtosecond laser assembly is used to perform single-layer processing using high power and high energy to form a characteristic prototype of a 16-layer workpiece;

[0069] S2: single-layer processing is performed using a high-power and high-frequency femtosecond laser assembly with low power and high frequency to form a characteristic profile of a single layer of the workpiece 16;

[0070] S3: Repeat steps S1 and S2 until the processing depth reaches the target depth. Before performing step S2 for the second time and after the second time, lower the high-power high-frequency femtosecond laser assembly by one layer so that the processed layer is at the focal position.

[0071] In this embodiment, a high-power and high-energy femtosecond laser component is first used for high-power and high-energy processing to ensure processing efficiency, but a certain heat-affected zone will be generated, and then a high-power and high-frequency femtosecond laser component is used for low-power and high-frequency processing to remove the heat-affected zone to ensure processing quality and accuracy. At the same time, the high-power and high-frequency femtosecond laser component is lowered by one layer for processing for the second time and thereafter to ensure the focus position and processing accuracy.

[0072] like Figure 1 , Figure 2 As shown, based on the above implementation mode, in step S3, when the lower layer of the adjacent upper and lower layers is processed by a high-power and high-energy femtosecond laser component using high power and high energy for single-layer processing, the upper layer of the adjacent upper and lower layers can be processed by a high-power and high-frequency femtosecond laser component using low power and high frequency for single-layer processing.

[0073] In this embodiment, while a lower layer of two adjacent upper and lower layers is processed by a high-power and high-energy femtosecond laser component using high power and high energy, a higher layer of the two adjacent upper and lower layers can be processed by a high-power and high-frequency femtosecond laser component using low power and high frequency at the same time. The high-power and high-energy femtosecond laser component and the high-power and high-frequency femtosecond laser component are used in parallel to ensure processing efficiency.

[0074] like Figure 1 , Figure 3 As shown, a high-energy and high-frequency composite parallel processing method based on femtosecond laser includes the following steps:

[0075] S1: high-power and high-frequency femtosecond laser components are used to perform single-layer processing at high power and high frequency to form a characteristic prototype of a single layer of the workpiece 16;

[0076] S2: Repeat step S1 until the processing depth reaches the target depth, and before performing step S1 for the second time and after the second time, lower the high-power high-frequency femtosecond laser assembly by one layer so that the processed layer is at the focal position;

[0077] S3: low-power and high-energy processing is performed by a high-power and high-energy femtosecond laser assembly to form a characteristic contour of the entire workpiece 16 .

[0078] In this embodiment, high-power and high-frequency femtosecond laser processing is first used to ensure processing efficiency and a sufficiently small heat-affected zone to prevent the generation of plasma shielding clouds, and then a high-power and high-energy femtosecond laser component is used to eliminate taper using low power and high energy to ensure processing quality and accuracy.

Claims

1. A high-energy, high-frequency, composite parallel processing device based on femtosecond laser, characterized in that: include: A high-power and high-energy femtosecond laser assembly, which is used to emit a first laser beam with high power and high pulse energy; A high-power and high-frequency femtosecond laser assembly, which is used to emit a second laser beam with high power and high pulse frequency; The adjusting component is used for loading a workpiece which can be processed by the first laser beam and the second laser beam and can move relative to the high-power high-energy femtosecond laser component and the high-power high-frequency femtosecond laser component.

2. A high-energy, high-frequency, composite parallel processing device based on femtosecond laser according to claim 1, characterized in that: The high-power and high-energy femtosecond laser assembly includes a high-power and high-energy femtosecond laser, a first beam collimation module, a dynamic Z-axis focusing mirror, a focusing mirror, a 3D scanning galvanometer, a first field mirror and a first Z-axis slide which are arranged in sequence. The high-power and high-energy femtosecond laser is used to generate a first laser beam. The first beam collimation module is used to collimate, expand, switch and adjust the first laser beam. The dynamic Z-axis focusing mirror is used to adjust the focal position of the first laser beam. The focusing mirror is used to focus the first laser beam. The 3D scanning galvanometer is used to move the first laser beam in the horizontal direction. The first field mirror is used to focus the first laser beam. The first Z-axis slide is used to drive the 3D scanning galvanometer and the first field mirror to move in the vertical direction.

3. A high-energy, high-frequency, composite parallel processing device based on femtosecond laser according to claim 1, characterized in that: The high-power and high-frequency femtosecond laser assembly includes a high-power and high-frequency femtosecond laser, a second beam collimation module, an ultra-high-speed scanning galvanometer, a second field mirror and a second Z-axis slide which are arranged in sequence. The high-power and high-frequency femtosecond laser is used to emit a second laser beam. The second beam collimation module is used to collimate, expand, switch and adjust the second laser beam emitted by the high-power and high-frequency femtosecond laser. The ultra-high-speed scanning galvanometer is used to move the second laser beam along a fast axis and a slow axis. The second field mirror is used to focus the second laser beam. The second Z-axis slide is used to drive the ultra-high-speed scanning galvanometer assembly and the second field mirror to move in a vertical direction.

4. A high-energy, high-frequency, composite parallel processing device based on femtosecond laser as claimed in claim 3, characterized in that: The ultra-high-speed scanning galvanometer includes a polygonal prism, and the polygonal prism is used to rotate at an ultra-high speed so as to reflect the second laser beam to move along the fast axis direction.

5. The high-energy and high-frequency composite parallel processing device based on femtosecond laser according to claim 1, characterized in that: The adjustment component includes a rotating table, which is used to load a workpiece that can be processed by the first laser beam and the second laser beam and can rotate relative to the high-power high-energy femtosecond laser component and the high-power high-frequency femtosecond laser component.

6. A high-energy, high-frequency, composite parallel processing device based on femtosecond laser according to claim 5, characterized in that: The adjustment component also includes an X-axis slide, the rotating table is connected to the X-axis slide, and the X-axis slide can drive the rotating table to move along the X-axis.

7. A high-energy, high-frequency, composite parallel processing device based on femtosecond laser according to claim 6, characterized in that: The adjustment component also includes a Y-axis slide, the X-axis slide is connected to the Y-axis slide, and the Y-axis slide can drive the X-axis slide to move along the Y-axis.

8. A high-energy and high-frequency composite parallel processing method based on femtosecond laser, characterized in that: Includes steps: S1: Use high power and high energy femtosecond laser components to perform single-layer processing to form the characteristic prototype of a single layer of the workpiece; S2: Use a high-power and high-frequency femtosecond laser component to perform single-layer processing using low-power and high-frequency to form the characteristic contour of a single layer of the workpiece; S3: Repeat steps S1 and S2 until the processing depth reaches the target depth. Before performing step S2 for the second time and after the second time, lower the high-power high-frequency femtosecond laser assembly by one layer so that the processed layer is at the focal position.

9. A high-energy and high-frequency composite parallel processing method based on femtosecond laser as claimed in claim 8, characterized in that: In step S3, while the lower layer of the adjacent upper and lower layers is processed by a high-power and high-energy femtosecond laser component using high power and high energy for single-layer processing, the upper layer of the adjacent upper and lower layers can be processed by a high-power and high-frequency femtosecond laser component using low power and high frequency for single-layer processing at the same time.

10. A high-energy and high-frequency composite parallel processing method based on femtosecond laser, characterized in that: Includes steps: S1: Use high-power and high-frequency femtosecond laser components to perform single-layer processing at high power and high frequency to form the characteristic prototype of a single layer of the workpiece; S2: Repeat step S1 until the processing depth reaches the target depth, and before performing step S1 for the second time and after the second time, lower the high-power high-frequency femtosecond laser assembly by one layer so that the processed layer is at the focal position; S3: Low-power and high-energy processing is performed through high-power and high-energy femtosecond laser components to form the overall characteristic contour of the workpiece.

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